GaN Components for

Aeronautics and Space Applications

Dr. Fabio COCCETTI

Head of Components Modelling and Reliability Competence Centre

More Electrical Aircraft Domain

fabio.coccetti@irt-saintexupery.com

www.irt-saintexupery.com

Outlook

General Context

WBG in the electromechanical chain - Module level

COTS Reliability and Risk Analysis

Natural Radiation Immunity

Conclusions and Perspectives

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IRT Saint Exupéryat a Glance

18/11/2018

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IRTs

4

8 IRTs were launched since 2012 in the frame of the French ‘Investissement d’Avenir’ (PIA), to supplement to other instruments (Competitivity Clusters, SATT for IP valorization, IDEX for higher education and fundamental research, etc.)

The aim of those thematic multi-disciplinary institutes is to reinforce competitiveness of French industry on the global market through world class technology research projects, teams and platforms.

Based on a 50-50 private-public partnership between French government and Public Research and Higher Educations establishments on the one hand, and key industrial partners on the other hand.

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In 2015, the 8 IRTs came together to create the Association of

Technological Research Institutes (FIT)

Public-Private

partnerships 50-50 long-term commitment of major

industrial and public partners

Technological

Research Programs derived from the roadmaps in the field

(competitivity clusters, CORAC, etc.)

Skills

development and

training supportTechnological platforms

accelerating technological

innovation and transfer to

industry

Integrated

collaborative

environment fitting into the public and

industrial research landscape

Vision

5

Excellence CenterWorld class in 3 key technology domains

for Aeronautics, Space and Embedded Systems

More Electrical Aircraft Embedded Systems

Materialsmultifunctional / high performance

Products / Marketsdevelopment

FundamentalResearch

Indu

stry

Pub

lic R

esea

rch

*Technology Readiness Level © IRT AESE “Saint Exupéry” - All rights reserved Confidential and proprietary document

Main partners

66

Public institutions & academics Industrial members

Laboratories

SMEs

Private ResearchCollectivities

Networks

Founding Members

18/11/2018

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The MEA Department

Context: More Electrical Aircraft

at a Glance

18/11/2018

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18/11/2018

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Electric & Hybrid PropulsionPo

wer

leve

lfo

r el

ectr

ical

pro

pu

lsio

n

Today 10 Year 20 Year 30 Year 40 Year

KWAll electric and hybrid electric

Hybrid electric 50 PAX regionalTurbo-electric distributed propulsion 100 PAX All electric Full range all general aviation

Hybrid electric 100 PAX regionalTurbo-electric distributed propulsion 150 PAX All electric Full range 50 PAX regional

Hybrid electric 150 PAX regionalTurbo-electric 100 PAX

Turbo/hybrid electric distributed propul. 300PAX

1 to 2 MW

5 to 10 MW

>10MW

2 to 5 MW

Challenges

18/11/2018

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From Low Voltage to Medium Voltage From 750VDC for MW-class to >6kV for 20MW-class

increase energy density of batteries From 180Wh/kg to >>500Wh/kg

increase power density of electrical machines From 15kW/kg to 40kW/kg

increase power density of power electronic From 2kW/kg to >> 10kW/kg (25kW/kg?)

Network distribution, protection

Conductor & dielectric technologies

Lithium air/sulphur technology?

Other?

Thermal management

High Speed

HV Insulation

Conductors (nano-tube, Supra…)

Permanent Magnet

Wide Band Gap components

Integration & Reliability (component to system)

Thermal management

Filter optimization, packaging

11

More Electrical Aircraft

Fan

Galley

28 Vdc conv

EHA

Motor

Pump

Anti-icing

1 2 5 10 20 50 100 150

Power (kVA)

Electrical Applications in Aircrafts

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Trade-off in power converters:

VolumeLosses

Weight

Cost Reliability

Advanced Topologies

Monolithic Coupled

Inductors

Multilevel

Converters

Wideband Gap

SemiconductorsSiC GaN

New Materials and Technologies

Nanocrystalline

Cores

WBG in the electromechanical chain

18/11/2018

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Context: Electrical Power Drive System Optimization

WBG Inverter (Classical 3 cells topology & 6 cells topology)

Filters

Cables

Electrical machines

Power Modules (Parasitic loop inductance reduced )

High Voltage materials for packaging, passives & motors

Thermal techno

Optimization of Electromechanical Chain

EMC issues – Challenges:

Modeling & Ensure the non regression regarding EMC

(SiC semiconductors)

Multi-physical optimization Electromechanical Chain

Health Monitoring

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Integrated design by optimization of electrical systems

Technologies,

components

Equipment

Systems

Network11/18/2018

13

IRT - Power Technology Integration Comp. Center – Dr. B. COGO-FRANCA

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Quadripolar approach : Frequency resolution Fast computation time (less than 300 ms)Represent CM equivalent circuit as a chain of two-port networks.

Use of [T] matrices to easily compute consecutive two-port networks in cascade.

PL

Sub-System

or

Frequency dependent

Trade-off: Impact of WBG Inverter on EMI

SiC and GaN

Noise Generation

IRT - Power Technology Integration Comp. Center – Dr. B. COGO-FRANCA

Trade-off: Impact of WBG Inverter on PD

Impact of PD in motors

Idealized voltage waveforms at the output of SiC Inverter for different

Gate Resistances Idealized voltage waveform at the input of motor terminals for different

Gate Resistances

Variation of maximum overvoltage with harness length

High Voltage (Overshoot)

IRT - Power Technology Integration Comp. Center – Dr. B. COGO-FRANCA

Project PGIP Improve power density of converters by inserting components inside a

PCB. Evaluate the gain of such technique regarding reduction of parasitic inductance and capacitance, thermal resistance and surface (1 year project).

Next / Ongoing Programs

16IRT - Power Technology Integration Comp. Center – Dr. B. COGO-FRANCA

Next / Ongoing Programs EPOWERDRIVE Project Objectives

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General Objective: Contribute with models, characterization results and technologies in order to help optimizing the

Power Drive System

Specific Objective: Design, Built and Test a Full Compliant 70kVA/56kW/540V THREE-PHASE INVERTER

APSI3D-Based SiC-Based Best Topo and Compo

- Evaluation of thermal and

efficiency potential of such

performing power module

technology

- Simple Topology, reliable

and performing components,

optimized efficiency and

filters

- Performing Topology,

components and technology

for maximum integration

Efficiency = 99%

P. Dens. = 15kW/kg

Efficiency = 98.5%

P. Dens. = 8kW/kg

Efficiency = 99%

Efficiency = 99,2% P. Dens. = 5.3kW/kg

Reference Filter

Power Core

Power Core + Filters

IRT - Power Technology Integration Comp. Center – Dr. B. COGO-FRANCA

GaN COTS Reliability assessment

18/11/2018

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Power GaN HEMT timeline

2010 2011 2012 2013 2014 2015 2016 2017

Source 1: Applications & markets for GaN in Power electronics by Point the Power, 2016

1er power GaN module

GaN 20V – 200V

600 V HEMT

600 V cascode HEMT

GaN-on-Si GiT600V

GaN-on- SiCUp to 1200 V 400V CoolGaN™

Source 2: Yole GaN and SiC devices for Power Electronics by Yole, 2015

650V HEMT1200V modules

600V power GaN Drivers

Tuesday, December 14, 2010

EPC, the first company to deliver discrete enhancement mode GaN (eGaN™) HEMTs

Spins off Soitec/CEA

Spins off MIT

&

1st GaN vertical 1500V transistor TrueGaN™

(no HEMT)

2018

Source 3: Intersil Extends Leading Radiation-Tolerant Portfolio with Gallium Nitride Power Conversion ICs for Satellite Applications by Intersil, May 2016

Radiation-hardened GaN HEMT Driver

for aeronautics

600V GaN power ICs

GaN Power module with 600V cascode 100V-650V GaNXP™

Avogy becomes

STMicroelectronics and CEA-Leti GaN-on-Si Power GaN

Source 4: STMicroelectronics and Leti Develop GaN-on-Silicon Technology for Power Conversion Applications. Geneva, Switzerland, and Grenoble, France / 24 Sep 2018

The RAMS Switching Paradigm

Driven by Emerging (COTS) / disruptive components (never used before) in AEROnautic SPACE and AUTOmotiveapplications

RAMS: Reliability Availability Maintainability and Safety (RAMS)

Difficult to untangle CFR from EOL (complex degradation mechanisms reliability model) Precise/Accurate assessment of component EOL becomes paramount for mission planning (derating, redundancy, ….)

Source: J. Berthon, et al., "Utilisation des composants DSM dans le contexte aéronautique.," in 19ème Congrés de Maitrise des Risques et Sûreté de Fonctionnement, Dijon, 21-23 Oct. 2014.

For COTS in severe environment (Aero Space Mission Profile)

FRAME methodology Assumption : the manufacturer have the deepest knowledges about

their components

But if it does not share them, we need to evaluate if the component canbe used in the final application -> risk analysis of lifetime

The different levels of the method :

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Complexity

Manufacturerdata

availability

Level 2

Level 3

Level 1

Level 4Manufacturer: provide EOLLaboratory: no roleUser : provide Mission Profile

M: provide parts infoLaboratory: no roleUser : compute reliabillitybased on EOL and MP

M: no role (data sheet)Laboratory: CA, Max rating verif)User : bibliography and compute EOL/MP

M: no role (data sheet)Laboratory: CA, DoE / PoF)User : bibliography and compute EOL/MP

Risk assessment resultCompletion of report

LEVEL 3 : PoF off the shelf

Exemple: Evaluate the lifetime of Dynamic RAM

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time

IRT Laboratory

Evaluation

Construction analysisMOS planar

MIM capacitormetals used : Cu, Al, Ti Cu, Al…

Dielectrics used : Zr, SiO2…

Level of risk

Criteria used

Component samples

Scientific publications

Instructions

Mechanisms :BTI, HCI, EM, leakage of cells…

Material : Cu, Al, Ti, Zr…

TTF reference + AF :need to find for all mechanisms

State of art :Vt=0,5V cell charge =1,5V…

Exemple of Case Study: GaN HEMT

18/11/2018 24

• Structure GaN HEMT normally off : couche pGaN sous la grille

• Substrat de croissance : Si

• Couche d’AlN : réduire le courant de fuite du substrat et le désaccord de maille

• Couche tampon d’AlGaN : diminuer les dislocations

Omar CHIHANI – IRT-IMS PhD

Thermiquement activable

Typical Failure Mechanisms

18/11/2018 25

Dégradation du métal

de grilleDélamination de la

passivation

Dégradation des contacts

ohmiques

Dégradation des interconnexions métalliques

Piégeage d’électrons dans

la passivation

Création de pièges à cause des électrons

chauds

Génération de pièges à cause des défauts à

l’hétérojonction AlGaN/GaN : température , Champ

électrique et stress mécanique

Dégradation du côté drain de la grille à cause de la

température et du champ électrique

Existence d’électrons chauds

Propres aux composants GaN

• Mécanisme de défaillance : processus physiques de dégradation

• Indicateur de défaillance : signature électrique

G. Meneghesso et al., Int. J. Microw. Wirel. Technol., vol. 2, no 1, p. 39-50, févr. 2010.

Omar CHIHANI – IRT-IMS PhD

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f(S) = exponential form f(S) = power law form

exp(a·S) or exp(a/S) Sk

1) E model or constant field/voltage acceleration

exponential model TTF = Ao * exp(–gEox) * exp(Eaa / kT)exp(–gEox)

2) 1/E model or, equivalently, anode hole

injection model TTF = to(T) * exp(G(T) / Eox)exp(G(T) / Eox)

3) V model, where failure rate is exponential

with voltage (gate oxyde < 4 nm) TTF = Ao * exp(–b V) * exp(Eaa / kT)exp(–b V)

4) Anode hydrogen release for the power-law

model Time to breakdown tBD = to * V–n * exp(Eaa / kT)V–n

5) N-Channel TTF = B * (Isub)–N * exp(Eaa / kT) (Isub)–N

6) P-Channel l < 0.25µm TTF = B * (Ig)–M * exp(Eaa / kT) (Ig)–M

7) Power law model TTF = [Dpt / Ao * exp(Eaa / kTappl) * (VG, appl)a]1/n

(VG, appl)a/n

8) Exponential voltage law model TTF = [Dpt / Ao * exp(Eaa / kTappl) * exp(a VG, appl)]1/n exp(a VG, appl)

9) Eyring model TTF = A * (< Jion >)–1 * exp(Eaa / kT) (< Jion >)–1

with < Jion > = < (e E r Do / kT) – (Do r(x,t) / x)

> is the time-averaged mobile ion flux

10) SILC-related dielectric leakage induced by

program/erase cycling - charge-loss TF = Ao * (cycles-n) * exp[Eaa/kT] * exp[-g*(VT,Crit - VG)]exp[-g*(VT,Crit - VG) (cycles-n)

charge-gain SILC TF = Ao * (cycles-n) * exp[Eaa/kT] * exp[-g*(VG - VT,Crit)] exp[-g*(VG-VT,Crit) (cycles-n)

Wearout failure rates and models (from JEDEC JEP122G)

TTF = Ao * f(S) * exp(Eaa / kT)

5.1 FEoL Failure Mechanisms – Time-Dependent Dielectric Breakdown (TDDB) – Gate Oxide

5.2 FEoL Failure Mechanisms – Hot Carrier Injection (HCI)

5.3 FEoL Failure Mechanisms – Negative Bias Temperature Instability (NBTI)

5.4 FEoL Failure Mechanisms – Surface inversion (mobile ions)

5.5 FEoL Failure Mechanisms - Floating-Gate Nonvolatile Memory Data Retention

Failure mechanisms models according to Quality Standard

JEDEC

…. To be completed / extended for WBG

Risk assessment resultCompletion of report

LEVEL 4 : PoF + tests

Need to evaluate the lifetime of a device

But no data of TTF and AF are available about degradation of leakage of cells

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time

IRT Laboratory

Evaluation

Construction analysis

Level of risk

Criteria used

Component samples

Scientific publications

Instructions

Tests of componentsDOE based on degradation

of retention time

Tests facilities

InstructionsMechanisms, materials ….

Failure Analysis

18/11/2018 28

Mécanisme de défaillance Indicateur de défaillance

État bloqué

(VGS < VGSth)

Pièges dans le buffer, la surface ou le coté drain de la grille

Augmentation de la résistance à l’état passant

Piégeage/Dépiégeage d’électrons dans la région de la grille

Dérive de la tension de seuil

État passant

(VGS > VGSth)

Piégeage d’électrons ou de trous dans la couche pGaN

Dérive de la tension de seuil (PBTI, NBTI)

Création de défauts ou de chemins de fuite dans l’empilement de grille p-GaN/AlGaN

Augmentation du courant de fuite de grille

M. Meneghini et al., 2017 IEEE IRPS) 2017, p. 3B-2.1-3B-2.8.

Classical standards based on Si-based components NOT Suitable for GaN !

GaN COTS Reliability assessment

Static stress conditions (HTRB and HTGB)

18/11/2018

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Laboratoire de l'Intégration du Matériau au Système

Dr. Loïc THEOLIER

PhD Omar CHIHANI

Vieillissements par paliers

18/11/2018 31

HTRB-T :

• VDS = 180 V & 50 °C <T < 180 °C

HTRB-V :

• 150 V < VDS < 240 V & T = 150 °C

HTGB-T :

• VGS = 5 V & 50 °C <T < 180 °C

HTGB-V :

• 1 V < VGS < 7 V & T = 150 °C

• Deux types de vieillissements par paliers :

• HTRB : High Temperature Reverse Bias

• HTGB : High Temperature Gate Bias

PhD Omar CHIHANI

Résultats : HTRB-T @ VDS = 180 V

18/11/2018 32

HTRB-T : impact sur la RDSon , transconductance et VGSth

RDSon (20 %)

Transconductance

Tension de seuil (15%)

L’évolution de la tension de seuil commence à partir du 7ème palier (160 °C)

PhD Omar CHIHANI

Conditions de vieillissement calendaire

19/11/2018 33

HTRB HT1 : 175 °C / 220 V

HTRB HT2 : 190 °C / 200 V

HTRB HT3 : 190 °C / 220 V

HTRB MT1 : 135 °C / 240 V

HTRB MT2 : 150 °C / 220 V

HTRB MT3 : 150 °C / 240 V

HTGB1 : 6 V /165 °C

HTGB2 : 7 V / 150 °C

HTGB3 : 6 V / 150 °C

HTGB4 : 6,5 V / 150 °C

HTGB5 : 6,5V / 165 °C

HTGB6 : 6,5 V / 130 °CEntre 500 et 1000 heures de vieillissement

4 à 5 composants par condition

PhD Omar CHIHANI

Vieillissement calendaire : HTRB HT

18/11/2018 35

HTRB HT : impact sur la RDSon ( 50 %)

HTRB HT : impact sur la VGSth ( 20 %)

Racine du temps de vieillissement (s0,5) Racine du temps de vieillissement (s0,5)

PhD Omar CHIHANI

Indicateurs de défaillance et leurs mécanismes associés

18/11/2018 36

Evolution de la résistance à l’état passant :

• Observée sur le vieillissement HTRB

• Cause : création de défauts dans la

région Grille-Drain ou Grille-Source

• Activé par le champ électrique

Evolution de la tension de seuil :

• Observée sur les vieillissement HTRB

et HTGB pour T > 150 °C

• Cause : création de défauts sous la

grille du composant

• Activé par le champ électrique et la

température

M. Meneghini, E. Zanoni, et G. Meneghesso - ICSICT 2014.

PhD Omar CHIHANI

GaN COTS Reliability assessment

Dynamic (Active Power Cycling)

18/11/2018

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Laboratoire d’Analyse et d’Architecture des Systèmes

Dr. Arnaud DUFOUR Pr. Patrick TOUNSI

PhD Manuel A González-Sentís

Methodology

Mise en place d’un Power cycling o Développement d’une carte de commande et stress

o Prise en compte des effets thermomécaniques (caméra IR)

o Identifier les signatures électriques de la dégradation

Localisation des MdD dans un HEMT.(1) Ionisation par impact ; (2) Punch-through ;(3) Surface hopping ; (4) Fuite verticale ;(5) TDDB ; (6) Effet piézoélectrique inverse

Source

Drain

Gate

Sub

strat

Image caméra Infrarouge

EPC2019 en cyclage

PhD Manuel A González-Sentís

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Banc de mesures

Drift effect Physical origin Measurement

Dynamic RDSON

increaseTrapping in GaN buffer and surface trapping between drain and gate

IG(VGS) measurementC(Vg) hysteresis measurement

Time-Dependent degradation

Generation of drain-source, gate-channel paths and vertical breakdown

Leakage current measurement

VTH shift Electron trapping beneath the gateID(VGS) characterisation

ID(VDS) for several VGS values

IG leakagecurrent

Path creation in the gate region, Trap-assisted tunnelling

IG(VGS) measurementC(Vg) hysteresis measurement

Source:Matteo Meneghini et al. IEEE, June 2017.

Spécial intérêt : effets de piégeage et les caractéristiques dynamiques, verrous qui freinent le développement de cette techno.

PhD Manuel A González-Sentís

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Exemple of Power Cycling Results

Cyclage actif avec un stress incrémental. Chaque step est d’une semaine

Étude de l’influence de la tension de grille sûr le vieillissement.

La mesure de la surface d’hystérésis de la courbe CG(V) permet de suivre la création de pièges pendant le cyclage.

PhD Manuel A González-Sentís

VG=4V

VG=5V

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Exemple of Power Cycling Results

PhD Manuel A González-Sentís

Measurments of the power cycling test. S0 is the initial characterization; and the stress S1, S2 & S3 are the steps. Note that DUTs 2 to 5 are driven at VG = 5V and

DUTs 6 to 8 are driven at VG = 4V.

Measured gate threshold voltageMeasured gate leakage

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GaN Radiation Immunity

18/11/2018

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Robustness ©

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t

Background

Objectives: Investigation of effect of radiations (Dose and SEE) on COTS Power GaN

Les Evènements Singuliers (SEE)

Effet non destructifEffet destructif

Effets des radiations

Effets de dose

SEU

SET

SEL

SEB

SEGR

SEL: Single Event LatchupSEB : Single Event BurnoutSEGR : Single Event Gate rupture

IRT Project Robustesse

?

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Radiation Investigation: Results

ion

FP

G D S

2,2 MV/cm

Root cause: rupture of the dielectric passivation layer (SiN)

SiN SiN

SiN

GaN-Buffer

2DEG

AlGaN

FP

No 2DEG under gate

Ec

Ev

Ef

Electron distribution at

VGS = 0 & VDS = 0

Density of traps effect on electric

field (before and after radiation)

TCAD Simulation of Single Event Effect

RX frontside view of the component (GaN System)Electric Field

Failure after radiation (burnout)

Experimental Characterization (Heavy Ions)

FP

G

TCAD simulation allows to explain impact

of ionization mechanism and related

multiplication phenomena enhanced by

heavy ion strikes under the field plate

edge rather than the other locations

x

Power GaN TCAD Models

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Definition of technologies and demonstrators

Radiative tests on WBG technologies

construction analysis

Component preparation

Electrical characterizations

before testing

Tests underradiative

environment

Electrical characterization

after test

Characterization of immunity to radiations

by X-ray & pulsed laser

Modeling(Laser & X-

rays

TCAD simulation

Experiments

Sample preparation

Laser testing

X-rays testing

FailureAnalysis

Bibliography

EPC 2045 100 V

EPC 2046 200 V

GaNSystems GS1008P-E05-MR 100 V

GaNSystems GS66508P-E05-MR 650 V

Panasonic PGA26E07BA 600 V

Irradiation

substrat

contact in

backside

Opening

backside

YX

YY

X ray / Laser

substrat

contact in

backside

Opening

backside

YX

YY

SiN SiN

SiN

GaN-Buffer

2DEG

AlGaN

FP

No 2DEG under gate

Ec

Ev

Ef

Space (satellite & launchers) Heavy Ions

Drone / helicopter / Aircraft Neutron until800MeV Proton > 50 MeV

Cascade of particle

laser spot Define the cross

section anddetermine the safearea (SOA) of thesecomponents.

Test the componentsbefore and after theradiation (measurethe degradation ofthe characteristics).

Find other alternativecharacterization less expensive,more accessible and addapted tothe miniaturization oftechnology.

Mapping in 3D or 2D thesensitive areas

Aim

Aim

Data analysisto understand the failure

mechanisms

Aim

Radiative environment

Test referencesRadiation Immunty Methodology©

IRT

AES

E “S

ain

t Ex

up

éry”

-A

ll ri

ghts

res

erve

d C

on

fid

enti

al a

nd

pro

pri

etar

y d

ocu

men

t

Perspective: Failure Risk Analysis Methodology

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48

49

FPGA Ring-Oscillator DOE

• FPGA is built from the basic CMOS Cells in

the listed technology node

• Entire device is filled with oscillators

• Continuous measurements eliminates

recover !

• 45nm (present work),

• Work done on 28nm and 20nm

• Then work on 16 nm FinFET

• 150 oscillators of 3 stages (f3)

• 50 oscillators of 5 stages (f5)

• 20 oscillators of 33 stages (f20)

• 3 oscillators of 333 stages (f333)

• 1 oscillator of 1001 stages (f1001)

Incorporates Averaging with number of stages

2n + 1 stages (frequency conditions)

Voltage stress

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FIT dots (Raw data from 9 DOEs) FIT lines (calculated and fitted )

Chip Temperature (ºC)

V=1.2V

f=0 GHz

f=1 GHz V=2.5V , f =0.5 GHz

V=2.2V , f =0 GHz

V=2.9V , f =1 GHz

HCI

BTI

EM

𝑃𝐻𝐶𝐼𝑃𝐵𝑇𝐼𝑃𝐸𝑀

=5.039 ∙ 1010

3.476 ·107

3.116 ·1017

13

𝜆 = 𝜆0 ∙ 𝑒𝑥𝑝𝐸𝑎𝑒𝑞𝑘 ∙

Experimental Activation Energy (BAZ) (Multiple Stress cond. / multiple failure mech.)

𝐸𝑎𝑒𝑞 = 𝑘 ∙𝜕 ln(𝜆)

𝜕1

M-STORM results (example 1/2)

XILINX SPARTAN 6 45nm technology: FIT predictions based on 3 mechanisms as separated by

MTOL Reliability MODEL

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𝜆 = 𝜆0 ∙ 𝑒𝑥𝑝𝐸𝑎𝑒𝑞𝑘 ∙

Experimental Activation Energy (BAZ) (Multiple Stress cond. / multiple failure mech.)

𝐸𝑎𝑒𝑞 = 𝑘 ∙𝜕 ln(𝜆)

𝜕1

M-STORM results (example 2/2)

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WBG based Ring Oscillator M-STORM

18/11/2018

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52

The ring oscillator circuits are investigation in order to

understand the effects of threshold voltage and on-state

resistance with frequency and power dissipation in the

oscillator circuit. The goal of this study is to compare

environmental stress, including I,V and frequency, F, on the

device operation.

a.u

.

2n + 1 stages (frequency conditions)

Voltage stress

Conclusions

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CONCLUSIONS

IRT-Saint Exupery supported R&D activities go from module design and technology optimisation to device Reliablity/Robustness assesment and risk management.

Module optimisation Reduce inductive parassite (swicthing and driver loops)

Reliability assesment static and dynamic methodologies to tackle FMA

Robustness evaluation under natural radiation (AS mission profiles)

Perspectives: Risk Analysis by Innovative Methodology (M-STORM)

18/11/2018

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© IRT AESE ”Saint Exupéry” - All rights reserved Confidential and proprietary document. This document and all information contained

herein is the sole property of IRT AESE “Saint Exupéry”. No intellectual property rights are granted by the delivery of this document

or the disclosure of its content. This document shall not be reproduced or disclosed to a third party without the express written

consent of IRT AESE “Saint Exupéry” . This document and its content shall not be used for any purpose other than that for which it is

supplied. IRT AESE ”Saint Exupéry” and its logo are registered trademarks.

5518/11/2018

Dr. A. Bensoussan (IRT-TAS), Dr. O. Crepel (IRT-AIRBUS) Mr. J.J. Fabre

(IRT-ACTIA), Mr. D. Ia (IRT-Techform), Dr. M. Zerarka (IRT),

Acknowledgments: