Gallium Nitride (GaN) Technology & Product Development

©2012 TriQuint Semiconductor

Gallium Nitride (GaN) Technology & Product Development

IEEE IMS / MTT-S 2012 – Montreal, Canada


GaN – A New Enabling Technology

• Five times faster, higher frequency, faster on-chip logic • Five times more power, smaller die, increased range and sensitivity • Higher efficiency (10-20%), simplifies system integration • Higher temperature operation (up to 225°C), more robust, enables new applications

TriQuint GaN

More Power

Higher Efficiency

Higher Temp

Advanced R&D Bandwidth

Next-Generation Radars

Communication Systems

New Sensors New Missions

500 GHz / 500V per ns

Electronic Warfare


TriQuint GaN Process Variants

Broad GaN Process Roadmap

GaN Process Name Frequency Drain Bias Status

0.25-µm DC – 20 GHz ≤40V In Production

(2008)

0.15-µm DC – 40 GHz ≤20V In Release

< 0.1-µm DC – 100 GHz ≤15V Research

THz E/D GaN DC – 500 GHz ≤15V Research


TriQuint’s Technology Leadership

Government RF Program Awards

Program Goal Outcome Business Significance

TITLE III Manufacturing Readiness Higher Yield

Faster Cycle times Better Models

Lower Cost

NJTT Better Thermal Management Higher Power Density for same reliability Technology

Better performance (Bandwidth)

NEXT Faster Devices E/D Integration

Shorter Gate Technology E/D Technology

V, E, W - band Technology Mixed Signal

MPC Switch based Amplifier Very Fast GaN switch More efficient Amplifiers

W-Band LNA E/D based LNA Reduced NF > 90 GHz Extend RF and Range


Why GaN?

• Addressing key high-performance needs – Networked communications – Electronic warfare systems – ISR (intelligence, surveillance

and reconnaissance) systems – GaN delivers:

• Greater efficiency • Reduced BOMs • Reduced / eliminated combining losses

6.5W Ku-band GaAs Power Amplifier 20W Ku-band GaN Power Amplifier

30W Wideband GaN PA

55W Power Transistor

40W GaN Switch

20W Ku-band GaN PA


Lower Combining

Losses.

Efficiency Higher Temperature

Higher Bandwidth

WHY GaN?

© 2012 TriQuint Semiconductor, Inc.

Bandwidth

Higher Power Density

Smaller Size for same

power

Lower Input and Output

Capacitances Higher

Bandwidth

Higher Efficiency


Smaller Size for same

power

Lower Combining

Losses Higher

Efficiency

Higher Voltage High Power

density without loosing speed

Harmonic tunings

Higher Efficiency

Higher Power


Smaller Size for same power

Lower Combining Losses for same

Power Higher Power

Higher Temperature

Higher Material Band

gap

Insulating even at higher Temperature

Low RF losses at high

temperature

Higher Temperature

Operation


WHY GaN on SiC?

Higher Thermal Conductivity

Lower Self Heating

Better Reliability

Technology Thermal Conductivity

Channel Temperature

Reliability

GaAs 52 W/mC ~300C x1 GaN on Si 145 W/mC ~210C x120 better

GaN on SiC 330 W/mC ~140C x21000 better

4.5 W/mm Dissipation Example


GaN Standard Products

© 2012 TriQuint Semiconductor, Inc.


Power GaN Transistors

Benefits

High Power / PAE High Gain Design Flexibility Export

Target Markets

Defense EW, Radar, Comm, GP Commercial BTS, Cable, Vsat, PtP Other Instrumentation

T1G6000528-Q3 DC-6GHz

9W

T1G6001528-Q3 DC-6GHz

18W

T1G6003028-FS DC-6GHz

30W

T1G4005528-FS DC-6GHz

55W


High Power Amplifiers

Benefits

High Saturated Power High PAE Wide Bandwidth

Target Markets

Defense EW, Radar, Comm Commercial Cable, Vsat, PtP Other Instrumentation

TGA2576-FL 2.5-6GHz

30W

TGA2573 2-18GHz

10W

TGA2593-GSG 13-15GHz

20W

TGA2579-FL 14-16GHz

20W


High Power Switches

Benefits

High power handling Small Footprint Low control current (uA) Fast Switching

Target Markets

Radar Instrumentation General Purpose

4x4 Ceramic QFN

1.15 x 1.65 (mm) 1.15 x 1.65 (mm)

TGS2351-SM DC-6GHz

40W

TGS2352 DC-12GHz

20W

TGS2353 DC-18GHz

10W


GaN Enabling the Future

Low Noise Amplifiers Low NF High Gain High Survivability

Higher Frequency Ka – W band Power High Speed Logic (500GHz)

Higher Efficiency Switch-based amplifiers

Controls Limiters Mixers High performance switches


Summary

• TriQuint has been a GaN R&D innovator since 1999, currently leading

5 major contracts

• GaN is a maturing technology offering significant performance and lifetime advantages over GaAs

• GaN has broad appeal across many markets due to.... – High power density – High thermal conductivity substrate – Low NF

• TriQuint offers a broad range of GaN solutions and services: – FETs, MMICs, switches, packaged transistors / amplifiers / switches – integrated assemblies and foundry services

• TriQuint is developing new GaN processes and product solutions that improve efficiency, reduce BOMs and satisfy requirements beyond the reach of other semiconductors

Gallium Nitride (GaN) Technology & Product Development

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