Gaddi S. Haase, Ph.D.e-mail: gaddih@hotmail.com Cell Phone: (469) 544-1134, Home: (972) 612-3454 Plano, TX

Senior Material Scientist / Physical Chemist / Semiconductor Process-Developer / Microelectronics Reliability Expert

CORE COMPETENCIES: Research team management • Leadership in CMOS component reliability modeling • Materials physics and chemistry • Microelectronics process development • Nanotechnology • Research in photocatalysis and photovoltaics • University Teaching.

CITIZENSHIP: USA

EXPERIENCE

Texas Instruments, Dallas, Texas

Process / Metrology Development and Reliability Modeling 2001 - 2009

Planned and managed external semiconductor foundry reliability qualification for external 45nm technology development (Both transistor and interconnect reliability, including electromigration, stress-migration, NBTI, channel hot carriers, and gate oxide degradation)

Led a team of cross-disciplinary reliability engineers for the evaluation of new interconnect dielectric films and tools for the 45nm technology node.

Advanced materials reliability researcho Focused mainly on low-k dielectrics and Cu interconnect systems for next generation CMOS

nodes: Characterization and accelerated-failure testing of various low-k and capping films combinations. Design of test structures and determination of reliability-related design rules, all the way to the 28nm technology node.

o Pioneered novel methodologies for removing process variations effects from reliability stress-test data and improving statistical analysis. The latter enabled the completion of the 90nm and the 65nm technologies qualifications at TI (over $25M revenue increase due to shorter time to market) and setting the 45nm to 28nm interconnect design rules.

o Pioneered a new lifetime model for interconnect dielectrics under electric stress, that is less conservative than existing models yet is supported by new pre-breakdown experimental observations (over $40M revenue increase due to die area shrinkage).

o Supported the development of various MIM capacitors with electrical characterization, test-structures, reliability models and design-rules for circuit designers.

Semiconductor process development: o Developed transistor contact plasma-etch for the 90nm technology node including first

adaptation to Ni-silicides, and modeled contact resistance variations (>$40M revenue).o Developed Ta2O5–based and other high-k planar MIM capacitors stack etch and various

metrologies (90nm and 65 nm technology nodes). o Participated in FeRAM (non-volatile ferroelectric memory) development activity: thin film

deposition (CVD, PVD), film-stack plasma etch, and compositional metrology.

The Weizmann Institute of Science, Rehovot, Israel 1992 - 2001

Professor / Senior Scientist at the Department of Chemical Physics.

Established a >$600,000 laboratory, and obtained funding from various agencies. Led a research group of graduate students and a post-doctoral fellow.

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Gaddi S. Haase, Ph.D. e-mail: gaddih@hotmail.com Page 2

Taught graduate courses in surface science and physical chemistry. Research: o Photochemistry, catalysis, photocatalysis (related to energy conversion and

storage), energy transfer between reactants and solid surfaces. o Electronic effects due to single missing atoms or adsorbed species at

semiconductor surfaces. Electronic structure at inorganic nanotubes surfaces.o Pioneered novel atomically-resolved surface photovoltage imaging techniques

(with super- and sub-bandgap illumination) for studying localized photo-reactivity at semiconductor surfaces, utilizing a home-built scanning tunneling microscope in ultrahigh vacuum. Was the first to show that a potential well near a charged surface defect and Fermi-level pinning due to a single surface state are confined to within 10Å radius in the presence of a gate.

o Used atomic-force microscopy (AFM) coupled with non-linear optics techniques to develop new near-field imaging tools with far-field irradiation as well as study energy transfer between optically-excited molecules on the tip and a substrate’s surface.

POSTDOCTORAL RESEARCH

Department of Chemistry, University of Wisconsin, Madison, WI 1991 - 1992 Scanning tunneling microscopy study of silicon surfaces under illumination. (Prof. R.J. Hamers)

Microelectronics Sciences Laboratories, Columbia University, New York City, NY, in collaboration with IBM 1989 - 1991 Laser-induced patterned-etch of GaAs without photoresist. (Prof. R.M. Osgood, Jr.)

EDUCATION

Ph.D. in Physical Chemistry -- Hebrew University, Jerusalem, Israel, Summa cum laude

Dissertation: Interaction of small molecules with well-defined metal surfaces (experimental work using molecular beams, temperature programmed desorption, LEED, and Auger spectroscopy in ultrahigh vacuum, accompanied by molecular dynamics and quantum mechanical computational work) (Prof. M. Asscher)

M.Sc. in Physical Chemistry -- Hebrew University, Jerusalem, Israel, Cum laude

Thesis: Dissociation dynamics of molecular ions in gas phase.

B.Sc. in Chemistry -- Hebrew University, Jerusalem, Israel, Cum laude

AWARDS

Dan Brenner prize for a distinguished M.Sc. thesis. Sara Wolf prize for outstanding graduate students. Aharon Katzir award for the best Ph.D. dissertation in the natural sciences in Israel. Allon fellowship for postdoctoral research. Incumbent of the Jacob and Alphonse Leniado career development chair of industrial

and energy research. The Lewinson Chemistry Sciences prize of the Weizmann Science Council. Member Group Technical Staff (peer voted, top12%), Texas Instruments.

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Gaddi S. Haase, Ph.D.e-mail: gaddih@hotmail.com Cell Phone: (469) 544-1134, Home: (972) 612-3454 Plano, TX

SELECTED PUBLICATIONS

1. "Slow unimolecular dissociation of bromobenzene ions at near threshold energies", M. Malinovitch, R. Arakawa, G. Haase, and C. Lifshitz, J. Phys. Chem. 89 (1985), 2253-2260.

2. "Interaction of N2 with Fe covered Re(0001)", G. Haase, M. Asscher and U. Linke, Appl. Surf. Sci. 35 (1988-89), 1-9.

3. "The dissociative chemisorption dynamics of N2 on catalytic metal surfaces: A quantum-mechanical tunneling mechanism", G. Haase, M. Asscher and R. Kosloff, J. Chem. Phys. 90 (1989), 3346-3355.

4. "Effect of translational and vibrational energy on the dissociative chemisorption of N2 on Re(0001)", E. Por, G. Haase, O. Citri, R. Kosloff and M. Asscher, Chem. Phys. Lett.. 186 (1991) 553-460

5. "Ultraviolet photon-induced interaction of Cl2 with GaAs(110): Dissociation by means of charge transfer", V. Liberman, G. Haase and R.M. Osgood Jr., J. Chem. Phys. 96 (1992), 1590-1601.

6. "Light-induced interaction of CCl4 with GaAs(110)", V. Liberman, G. Haase and R.M. Osgood Jr., Surf. Sci. 268 (1992), 307-318

7. "Condensed chlorine etching of GaAs induced by excimer laser radiation", M.C. Shih, M.B. Freiler, G. Haase, R. Scarmozzino and R.M. Osgood Jr., Appl. Phys. Lett. 61 (1992), 828-830

8. "Electrostatic sample-tip interaction in the scanning tunneling microscope.", M. McEllistrem, G. Haase, D. Chen and R.J. Hamers., Phys. Rev. Lett. 70 (1993), 2471-2474

9. "Single Cs adatoms at Si(001)2x1 surfaces: A local surface photovoltage imaging study”, D. Gorelik, S. Aloni, & G. Haase, Surf. Sci. 432, 265-278 (1999)

10. "Local Fermi level pinning at a single adatom (Cs) or vacancy (As) on a GaAs(110) surface", S. Aloni, I. Nevo & G. Haase, Phys. Rev. B. 60, 2165-2168 (1999)

11. "The effect of illumination on the preferred oxygen initial adsorption sites at a Si(111)7x7 surface”, D. Gorelik, & G. Haase, J. Phys. Chem. B., 104, 2575-2577 (2000).

12. "Surface photovoltage imaging for the study of local electronic structure at semiconductor surfaces”, G. Haase, Inter. Rev. Phys. Chem., 19, 247-276 (2000).

13. "The electronic nature of the Cl-adatom at GaAs(110) surfaces due to Cl2 dissociative adsorption and CCl4 photodecomposition”, S. Aloni, & G. Haase, Surf. Sci., 477, 133-140 (2001).

14. "Photovoltage imaging of a single As-vacancy at a GaAs(110) surface: Evidence for electron trapping by a charged defect?", S. Aloni, I. Nevo & G. Haase, J. Chem. Phys. 115, 1875-1881 (2001).

15. "The effect of substrate’s topography on the local electronic structure of WS2 nanotubes.”, O. Tal, M. Remskar, R. Tenne, and G. Haase, Chem. Phys. Lett. 344, 434-440 (2001).

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16. "Leakage, breakdown, and TDDB characteristics of porous low-k silica-based interconnect dielectrics”, E.T. Ogawa, J.Y. Kim, G.S. Haase, H.C. Mogul, and J.W. McPherson, 41st Annual. 2003 IEEE International Reliability Physics Symp. Proc., 166-172 (2003).

17. "Effects of dielectric liners on TDDB lifetime of a Cu/Low-k interconnect”, T.Y. Tsui, P. Matz, R. Willecke, E. Zielinski, T. Kim, G. Haase, J. McPherson, A. Singh and A.J. McKerrow, 2004 IEEE International Interconnect Technology Conf. Proc., 87-89 (2004).

18. “Reliability analysis method for low-k interconnect dielectrics breakdown in integrated circuits”, G. S. Haase, E. T. Ogawa, and J. W. McPherson, J. Appl. Phys. 98, 34503-34514 (2005)

19. “Gate dielectric integrity along the road map of CMOS Scaling including multi-gate FET, TiN Metal Gate, and HfSiON High-k Gate Dielectric”, T. Pompl , H. C. Mogul, M.Kerber, G. Haase, E. Ogawa, J. W. McPherson, W. Xiong, T. Schulz, K. Schrüfer, R. Cleavelin, 44th Annual. IEEE International Reliability Physics Symp. Proc. (2006)

20. “Modeling of interconnect dielectric lifetime under stress conditions and new extrapolation methodologies for time dependent dielectric breakdown”, G.S. Haase and J.W. McPherson, 45rd Annual. IEEE International Reliability Physics Symp. Proc. p. 390 (2007).

21. “An alternative model for interconnect low-k dielectric lifetime dependence on voltage”, G.S. Haase, 46rd Annual. IEEE International Reliability Physics Symp. Proc. p.556 (2008).

22. “A model for electric degradation of interconnect low-k dielectrics in microelectronic integrated circuits“. G. S. Haase, J. Appl. Phys. 105 , 44908 (2009) (URL: http://link.aip.org/link/?JAP/105/044908)

Patent US 6,967,499: “Dual ramp rate dielectric breakdown testing methodology”, issued Nov. 22, 2005

Over 25 invited talks and special seminars in conferences, companies and universities (including at Bell Labs, Cornell, Berkeley, Harvard, and Oxford)Served on the paper selection committee and chaired a few BEOL reliability sessions at the IEEE International Reliability Physics Symposium (IRPS) and the IEEE International Integrated Reliability Workshop (IIRW).

A list of references is available upon request.

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