Fundamentals of Computer Systemssedwards/classes/2020/3827-summer/...151.966 64 Gd Gadolinium 157.25...

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Fundamentals of Computer Systems Transistors, Gates, and ICs Stephen A. Edwards Columbia University Summer 2020

Transcript of Fundamentals of Computer Systemssedwards/classes/2020/3827-summer/...151.966 64 Gd Gadolinium 157.25...

Page 1: Fundamentals of Computer Systemssedwards/classes/2020/3827-summer/...151.966 64 Gd Gadolinium 157.25 65 Tb Terbium 158.925 66 Dy Dysprosium 162.50 67 Ho Holmium 164.930 68 Er Erbium

Fundamentals of Computer SystemsTransistors, Gates, and ICs

Stephen A. Edwards

Columbia University

Summer 2020

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Semiconductor

sem·i·con·duc·tornoun

1. A substance, such as silicon or germanium, withelectrical conductivity intermediate between that of aninsulator and a conductor

2. A semiconductor device1IA

11A

18VIIIA8A

2IIA2A

13IIIA3A

14IVA4A

15VA5A

16VIA6A

17VIIA7A

3IIIB3B

4IVB4B

5VB5B

6VIB6B

7VIIB7B

8 9VIII8

10 11IB1B

12IIB2B

Periodic Table of the Elements

LanthanideSeries

ActinideSeries

© 2013 Todd Helmenstinechemistry.about.comsciencenotes.org

1

HHydrogen1.008

3

LiLithium6.941

4

BeBeryllium9.012

11

NaSodium22.990

12

MgMagnesium24.305

19

KPotassium39.098

20

CaCalcium40.078

21

ScScandium44.956

22

TiTitanium47.88

23

VVanadium50.942

24

CrChromium51.996

25

MnManganese54.938

26

FeIron

55.933

27

CoCobalt58.933

28

NiNickel58.693

29

CuCopper63.546

30

ZnZinc65.39

31

GaGallium69.732

13

AlAluminum26.982

5

BBoron10.811

32

GeGermanium

72.61

14

SiSilicon28.086

6

CCarbon12.011

33

AsArsenic74.922

15

PPhosphorus30.974

7

NNitrogen14.007

34

SeSelenium78.09

16

SSulfur32.066

8

OOxygen15.999

35

BrBromine79.904

17

ClChlorine35.453

9

FFluorine18.998

36

KrKrypton84.80

18

ArArgon39.948

10

NeNeon20.180

2

HeHelium4.003

37

RbRubidium84.468

38

SrStrontium87.62

39

YYttrium88.906

40

ZrZirconium91.224

41

NbNiobium92.906

42

MoMolybdenum

95.94

43

TcTechnetium98.907

44

RuRuthenium101.07

45

RhRhodium102.906

46

PdPalladium106.42

47

AgSilver

107.868

48

CdCadmium112.411

49

InIndium114.818

50

SnTin

118.71

51

SbAntimony121.760

52

TeTellurium127.6

53

IIodine

126.904

54

XeXenon131.29

55

CsCesium132.905

56

BaBarium137.327

57-71 72

HfHafnium178.49

73

TaTantalum180.948

74

WTungsten183.85

75

ReRhenium186.207

76

OsOsmium190.23

77

IrIridium192.22

78

PtPlatinum195.08

79

AuGold

196.967

80

HgMercury200.59

81

TlThallium204.383

82

PbLead207.2

83

BiBismuth208.980

84

PoPolonium[208.982]

85

AtAstatine209.987

86

RnRadon222.018

87

FrFrancium223.020

88

RaRadium226.025

89-103

57

LaLanthanum138.906

58

CeCerium140.115

59

PrPraseodymium

140.908

60

NdNeodymium

144.24

61

PmPromethium144.913

62

SmSamarium150.36

63

EuEuropium151.966

64

GdGadolinium157.25

65

TbTerbium158.925

66

DyDysprosium162.50

67

HoHolmium164.930

68

ErErbium167.26

69

TmThulium168.934

70

YbYtterbium173.04

71

LuLutetium174.967

89

AcActinium227.028

AlkaliMetal

AlkalineEarth

TransitionMetal

BasicMetalSemimetal Nonmetal Halogen Noble

Gas Lanthanide Actinide

90

ThThorium232.038

91

PaProtactinium231.036

92

UUranium238.029

93

NpNeptunium237.048

94

PuPlutonium244.064

95

AmAmericium243.061

96

CmCurium247.070

97

BkBerkelium247.070

98

CfCalifornium251.080

99

EsEinsteinium

[254]

100

FmFermium257.095

101

MdMendelevium

258.1

102

NoNobelium259.101

103

LrLawrencium

[262]

104

RfRutherfordium

[261]

105

DbDubnium[262]

106

SgSeaborgium

[266]

107

BhBohrium[264]

108

HsHassium[269]

109

MtMeitnerium

[268]

110

DsDarmstadtium

[269]

111

RgRoentgenium

[272]

112

CnCopernicium

[277]

113

UutUnuntriumunknown

114

FlFlerovium[289]

115

UupUnunpentiumunknown

116

LvLivermorium

[298]

117

UusUnunseptiumunknown

118

UuoUnunoctiumunknown

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Sand into Silicon

Silica a.k.a. SiO2 a.k.a. Quartz

SiO2+2 C→ Si+2 CO

Elemental, amorphous silicon

MonocrystallineSilicon Ingot

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Doping Silicon Makes It a Better Conductor

Si Si Si

Si Si Si

Si Si Si

Undoped (pure)silicon crystal

Not a goodconductor

Si Si Si

Si B− Si

Si Si Si

+

p-type (doped)silicon:

boron atom stealsa nearby electron

Si Si Si

Si As+ Si

Si Si Si

n-type (doped)silicon:

arsenic’s extraelectron jumps loose

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A PN Junction aka A Diode

p (holes) n (electrons)

Depletion region

0V

+

+

Ammeter

0

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A PN Junction aka A Diode

p (holes) n (electrons)

Depletion region

2V

+

+

Ammeter

0

Forward biased: current flows

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A PN Junction aka A Diode

p (holes) n (electrons)

Depletion region

−2V

+

+

Ammeter

0

Reverse biased: no current flow

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An N-Channel MOS Transistor

p (holes)

n n

3V

0V+

+

+

Ammeter

0

Drain Source

GateSiO2

Gate at 0V: Off

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An N-Channel MOS Transistor

p (holes)

n n

3V

3V+

+

+

Ammeter

0

Drain Source

GateSiO2

+++++++++−−−−−−−−

Gate positive: On

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The CMOS Inverter

Y

0V

3V

A

A Y

p-FET

n-FET

An inverter is built from two MOSFETs:

An n-FET connected to ground

A p-FET connected to the power supply

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The CMOS Inverter

Y

0V

3V

A

A Y

3V

1

0V

0

Off

On

When the input is near the power supplyvoltage (“1”),

the p-FET is turned off;

the n-FET is turned on, connecting theoutput to ground (“0”).

n-FETs are only good at passing 0’s

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The CMOS Inverter

Y

0V

3V

A

A Y

0V

0

3V

1

On

Off

When the input is near ground (“0”),

the p-FET is turned on, connecting theoutput to the power supply (“1”);

the n-FET is turned off.

p-FETs are only good at passing 1’s

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The CMOS NAND Gate

Y

A

B

AB

Y

Two-input NAND gate:

two n-FETs in series;

two p-FETs in parallel

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The CMOS NAND Gate

Y

A

B

AB

Y

0

0

00

1

1

Both inputs 0:

Both p-FETs turned on

Output pulled high

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The CMOS NAND Gate

Y

A

B

AB

Y

0

1

01

1

1

One input 1, the other 0:

One p-FET turned on

Output pulled high

One n-FET turned on, but does notcontrol output

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The CMOS NAND Gate

Y

A

B

AB

Y

1

1

11

0

0

Both inputs 1:

Both n-FETs turned on

Output pulled low

Both p-FETs turned off

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The CMOS NOR Gate

Y

A

B

AB

Y

Two-input NOR gate:

two n-FETs in parallel;

two p-FETs in series.

Not as fast as the NAND gatebecause n-FETs are faster thanp-FETs

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A CMOS AND-OR-INVERT Gate

Y

C

D

A

B

ABCD

Y

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Static CMOS Gate Structure

p-FETpull-upnetwork

n-FETpull-downnetwork

YInputs

Pull-up and Pull-downnetworks must becomplementary; exactly oneshould be connected for eachinput combination.

Series connection in oneshould be parallel in theother

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CMOS Inverter Layout

Y

Vss

Vdd

A

Cross Section ThroughN-channel FET

A

Vss

Vdd

Y

Top View

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Full Adder Layouts

From

http

://book.h

uihoo.co

m/desig

n-of-vlsi-system

s/

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Intel 4004: The First Single-Chip Microprocessor

4001: 256-byte ROM + 4-bit IO port4002: 40-byte RAM4003: 10-bit shift register4004: 740 kHz 4-bit CPU w/ 45 instructions (2300 transistors)

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Intel 4004 Masks

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Intel 4004 Die Photograph