Ferroelectric RAMFRAM

FUJITSU SEMICONDUCTOR LIMITED

For further information please contact:

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All Rights Reserved.The contents of this document are subject to change without notice.Customers are advised to consult with sales representatives before ordering.The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose of reference to show examples of operations and uses of FUJITSU SEMICONDUCTOR device; FUJITSU SEMICONDUCTOR does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating the device based on such information, you must assume any responsibility arising out of such use of the information.FUJITSU SEMICONDUCTOR assumes no liability for any damages whatsoever arising out of the use of the information.Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use or exercise of any intellectual property right, such as patent right or copyright, or any other right of FUJITSU SEMICONDUCTOR or any third party or does FUJITSU SEMICONDUCTOR warrant non-infringement of any third-party's intellectual property right or other right by using such information. FUJITSU SEMICONDUCTOR assumes no liability for any infringement of the intellectual property rights or other rights of third parties which would result from the use of information contained herein.The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite).Please note that FUJITSU SEMICONDUCTOR will not be liable against you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products.Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of overcurrent levels and other abnormal operating conditions.Exportation/release of any products described in this document may require necessary procedures in accordance with the regulations of the Foreign Exchange and Foreign Trade Control Law of Japan and/or US export control laws.The company names and brand names herein are the trademarks or registered trademarks of their respective owners.

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©2011-2013 FUJITSU SEMICONDUCTOR LIMITED Printed in JapanAD05-00033-5E February 2013Edited: Sales Promotion Department

FRAM

Non-Volatile

GreatRead/Write

Cycles

FastWrite

Low PowerConsumption

HighSecurity

FRAM SearchFor more information, please visit:

What is FRAM?FRAM (Ferroelectric RAM) is a non-volatile and random access memory (RAM) which retains stored data even when power is turned off. As compared with conventional non-volatile memories such as EEPROM (Electrically Erasable and Programmable Read-Only Memory) and Flash memory, FRAM exhibits superior performance in fast write, greater read/write cycle endurance and low power consumption.Since started mass production of FRAM in 1999, Fujitsu Semiconductor has been assuring high quality and stable supply of FRAM products to our valued customers for over a decade.

We offer most reliable memory with "State-of-the-Art memory with proven quality"

～Fujitsu's Non-volatile Memory, FRAM～

Serial MemoryFRAM products with serial interface are compatible to EEPROM and serial Flash memories, and are offered in 8-pin SOP and 8-pin SON packages. Compared to conventional other non-volatile memories, FRAM products have advantages in fast write, read/write cycles, and low power consumption.

● I2C Interface

What is FRAM? Standalone Memory

FRAM Features

FRAM Product Families

Example of Application using FRAM

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses a ferroelectric film as a capacitor to store data. FRAM is a RAM (Random Access Memory) with non-volatile in which 10-year data retention is possible without battery.

FRAM "Standalone Memory" family has 2 product series: serial memory (Interface: I2C and SPI) products and parallel interface products.

・Non-volatile・Random Access・Fast write speed・Great Read/Write Cycle Endurance・Low Power Consumption

FRAM has two product families. One is "Standalone Memory" for easy implementation, and another is "FRAM-embedded LSI" that is application-oriented LSI with FRAM macro such as LSI for RFID and authentication LSI.Fujitsu is also offering custom LSI optimized for customer application.

High performance, low power, 1-trillion read/write cycles with extremely fast write makes FRAM an ideal non-volatile memory for many applications. Data loss can be prevented by writing data quickly into FRAM in the event of sudden power loss. Data logging and parameters storage are other common usage.

We deliver, "Trust".

Non-volatile Memory, FRAM

FRAM EEPROM FLASH SRAMMemory Type Non-volatile Non-volatile Non-volatile VolatileWrite Method Overwrite Erase + Write Erase + Write Overwrite

Write Cycle Time 150ns 10ms 10µs 55nsRead/Write Cycles 1012 106 105 Unlimited

Booster Circuit No Yes Yes No

OA Equipment

Amusement

Audio, AV Equipment

Measurement and Analyzing Equipment

Medical, Pharmaceutical

SSD

ATM

Communication Equipment

FA

Traceability Management in Distribution

Counter, parameter data storage

Resume and parameter data storage

Resume and parameter data storage

Measuring data and revised data storage

Trace of sterilization record and examination record

Logging management, cache memory

Transaction history, logging management

Communication resume and logging management

Parameter data storage, logging management

Record of transportation environment, logistics, and warehousing

Parallel MemoryFRAM products with parallel interface, which is compatible to SRAM interface, are replaceable with battery-backup SRAM (BB SRAM), and are offered in TSOP and SOP packages.

Product LineupFujitsu Semiconductor provides FRAM products with density ranges of 4Kbit to 256Kbit for I2C interface, 16Kbit to 256Kbit for SPI interface, and 256Kbit to 4Mbit for parallel interface in production. In addition, to meet the requirement of large density memory from customers, Fujitsu is developing 1Mbit and 2Mbit SPI interface FRAMs, and plans to develop 8Mbit parallel interface FRAM.

Part Number Memory Density

Power supply voltage

Operating frequency(MAX)

Operating temperature Read/Write cycles Data retention

guaranteed Package

MB85RC256V 256Kbit 2.7 to 5.5V 1MHz -40 to +85°C 1012 (1 trillion) times 10 years (+85°C) SOP-8MB85RC128A 128Kbit 2.7 to 3.6V 1MHz -40 to +85°C 1012 (1 trillion) times 10 years (+85°C) SOP-8MB85RC64A 64Kbit 2.7 to 3.6V 1MHz -40 to +85°C 1012 (1 trillion) times 10 years (+85°C) SOP-8MB85RC64V 64Kbit 3.0 to 5.5V 1MHz -40 to +85°C 1012 (1 trillion) times 10 years (+85°C) SOP-8MB85RC16 16Kbit 2.7 to 3.6V 1MHz -40 to +85°C 1012 (1 trillion) times 10 years (+85°C) SOP-8/SON-8MB85RC16V 16Kbit 3.0 to 5.5V 1MHz -40 to +85°C 1012 (1 trillion) times 10 years (+85°C) SOP-8MB85RC04V 4Kbit 3.0 to 5.5V 1MHz -40 to +85°C 1012 (1 trillion) times 10 years (+85°C) SOP-8

Part Number Memory Density Power supply voltage Cycle time Operating

temperature Read/Write cycles Data retention guaranteed Package

MB85R4001A 4Mbit（512K×8） 3.0 to 3.6V 150ns -40 to +85°C 1010 (10 billion) times 10 years (+55°C) TSOP-48MB85R4002A 4Mbit（256K×16） 3.0 to 3.6V 150ns -40 to +85°C 1010 (10 billion) times 10 years (+55°C) TSOP-48MB85R1001A 1Mbit（128K×8） 3.0 to 3.6V 150ns -40 to +85°C 1010 (10 billion) times 10 years (+55°C) TSOP-48MB85R1002A 1Mbit（64K×16） 3.0 to 3.6V 150ns -40 to +85°C 1010 (10 billion) times 10 years (+55°C) TSOP-48MB85R256F 256Kbit（32K×8） 2.7 to 3.6V 150ns -40 to +85°C 1012 (1 trillion) times 10 years (+85°C) TSOP-28/SOP-28

Part Number Memory Density

Power supply voltage

Operating frequency(MAX)

Operating temperature Read/Write cycles Data retention

guaranteed Package

MB85RS256B 256Kbit 2.7 to 3.6V 33MHz -40 to +85°C 1012 (1 trillion) times 10 years (+85°C) SOP-8MB85RS128B 128Kbit 2.7 to 3.6V 33MHz -40 to +85°C 1012 (1 trillion) times 10 years (+85°C) SOP-8MB85RS64 64Kbit 2.7 to 3.6V 20MHz -40 to +85°C 1012 (1 trillion) times 10 years (+85°C) SOP-8MB85RS64V 64Kbit 3.0 to 5.5V 20MHz -40 to +85°C 1012 (1 trillion) times 10 years (+85°C) SOP-8MB85RS16 16Kbit 2.7 to 3.6V 20MHz -40 to +85°C 1012 (1 trillion) times 10 years (+85°C) SOP-8/SON-8

● SPI InterfaceStandalone

MemorySerial Memory

Parallel Memory

LSI for RFID

Authentication LSI

Custom LSI

FRAM-embeddedLSI

FRAM

256K

16K

64K

128K

2M

I2C 3V I2C 5V SPI 5VSPI 3V （1.8V-3V）

Parallel 3V（1.8V-3V）

Density (bit)

Interface4K

1M

MB85RC128A3V

MB85RC64A3V

MB85RC163V

MB85RC16V5V

MB85RC64V5V

MB85RS163V

MB85RS643V

MB85RS128B3V

MB85RS256B3V

MB85R4001/2A3.3V

MB85R1001/2A3.3V

MB85R256F3V

MB85RS64V5V

1Mbit SPI1.8V-3V

MB85RC04V3.3V-5V

4M

8M

MB85RC256V3V-5V

2Mbit SPI1.8V-3V

8Mbit Parallel1.8V-3VMass production Under

development In planning

43

FRAM-embedded LSI

Eco-Friendly Memory Products

Fujitsu Semiconductor offers FRAM-embedded LSIs, which utilize the strengths of FRAM such as high speed, high endurance and low power. RFID and authentication LSI, including custom design are some examples.

Fujitsu has been developing environmental-friendly products to contribute to global environment protection.

For example, our 16Kbit FRAM with I2C interface, MB85RC16, consumes the least power in its class. As compared to similar EEPROM, write operating current can be reduced by as much as 98% at the same operating conditions. FRAM low power feature contributes considerably to reduction of CO2 emission.

This 16Kbit FRAM is available in 8-pin SON package with 3mm x 2mm in dimensions, resulting in 80% reduction of mounting space on the PCB as compared to existing 8-pin SOP package.

Fujitsu Semiconductor is working relentlessly to reduce burden on the environment by using low power FRAM technology in pursue of developing high-performance semiconductor devices.

LSI for FRAM RFID TagFujitsu supports FRAM-embedded LSI products for RFID tag with 13.56MHz HF band and 860-960MHz UHF band. Embedded FRAM has advantages of fast write and great read/write cycles. FRAM-embedded LSI products for passive RFID tag.

● Key Features・Improve throughput with faster write・Equal read and write distance ・Larger memory density allowing more data storage・Up to 1 trillion read/write cycle allowing frequent data logging and long term reuse・International Standard: conformed to ISO15693, ISO18000-3, 6.

● Target Applications ・FA, Fabrication management・RFID sensor・Maintenance and Asset management・Ucode certification ・Medical tools and linen・Traceability management in food/drug distribution

FRAM-embedded Authentication LSIFRAM has been used in many security applications. Fujitsu's Authentication LSI with embedded FRAM use a Challenge and Response authentication loop between the host system and its peripherals to differentiate between authorized and counterfeit parts. This LSI prevents unauthorized cloned peripherals and accessories to be used in equipment such as printer and MFP.

FRAM-embedded Custom LSIFRAM can be integrated into CMOS process making it possible for an optimized single chip solution consisting of logic, analog and FRAM. Fujitsu also offers Custom design services which allows customers to take advantage of FRAM superior properties for their specific applications.

● Product Lineup of LSI for FRAM RFID Tag

Part number Operating frequency Memory density Commands Serial interface Data retention

guaranteed Read/Write cycles

MB97R803A/B UHF860-960MHz 4KBytes ISO/IEC18000-6C

EPC C1G2 Ver.1.2.0 ̶ 10 years (+55°C) 1010 (10 billion) times

MB97R804A/B UHF860-960MHz 4KBytes ISO/IEC18000-6C

EPC C1G2 Ver.1.2.0 SPI 10 years (+55°C) 1010 (10 billion) times

MB89R118C HF13.56MHz 2KBytes ISO/IEC15693 ̶ 10 years (+85°C) 1012 (1 trillion)

times

MB89R119B HF13.56MHz 256Bytes ISO/IEC15693 ̶ 10 years (+85°C) 1012 (1 trillion)

times

MB89R112 HF13.56MHz 9KBytes ISO/IEC15693 SPI 10 years (+85°C) 1012 (1 trillion)

times

● Roadmap of LSI for FRAM RFID Tag

Write Operating Current Comparison

Comparison of Mounting Space

Logic

Authentication Target

Main UnitFRAM

(Key & Data)

Crypto IP(AES etc.)

FRAM Authentication ChipCrypto

Communication

I2C, SPI, RF etc.

・Conditions:16Kbit, I2C, 400KHz,3.6V, Write, Spec value.

FA, Fabrication management RFID sensor

Ucodecertification

Medical toolsand linen

Maintenance andAsset management

Traceabilitymanagement in food/drugdistribution

FRAMFRAMUserLogic

IP

FRAM

FRAM-embeddedCustom LSI

Applications suitedfor FRAM

・Non-volatile・Fast Write・Great Read/Write Cycles・Low Power Consumption・Security

SRAM

ROM

Operatingcurrent (mA)(Max)

2.0

1.0

Max. 98%reduction

StandardEEPROM

FRAM

Distance

Memory Density

UHF 860~960MHz

HF 13.56MHz

3m

256B 2KB～4KB 8KB～

・Contactless Authentication ・Security Feature・EPC Feature・NFC Type6 Feature

・Contactless Authentication ・Security Feature・EPC Feature・NFC Type6 Feature

50cm

MB97R803A/BMB97R804A/B・FRAM 4KB・SPI I/F

MB89R119B・FRAM 256B

MB89R112・FRAM 9KB ・SPI I/F

・Energy Harvesting・Sensor I/F・Small Density UHF　（for Pharmaceutical Sterilization Use)

・Energy Harvesting・Sensor I/F・Small Density UHF　（for Pharmaceutical Sterilization Use)

Next Production DevelopmentNext Production DevelopmentFA, MaintenanceMedical/Biomedical/Pharmaceutical Embedded RF

MB89R118C・FRAM 2KB

SOP-8SOP-8

SON-8SON-8

Reducing mounting space more than 80%

8-pin SOP Package(Standard package)

8-pin SON Package(Very small package)

PCB area

65