From ITRS 2.0 to IRDS” · OCTOBER 2017 E3S P.Gargini Paolo Gargini Chairman IRDS, IEUVI Fellow...

E3S P.GarginiOCTOBER 2017

Paolo Gargini

Chairman IRDS, IEUVI

Fellow IEEE, Fellow I-JSAP

“Roadmap Evolution:

From NTRS to ITRS,

From ITRS 2.0 to IRDS”

1


The Making of an Industry

1958. Invention of planar process

1958. Invention of integrated circuit (IC)

1965. First publication of Moore’s Law

1969-71. Commercialization of MOS

1972-74. Dennard’s Scaling Laws

1975. Second publications of Moore’s Law

1975~2002. Geometrical Scaling

2003~2024. Equivalent Scaling

2025~2040. 3D Power Scaling

~25 years

~25 years

~25 years

2

~25 years


The Power of Trends

TIME

COST

PAST

PRESENT

FUTURE

TIME

PERFORMANCE

PAST

PRESENT

FUTURE

3

~20-25 years inflection points


Cost and Performance Penalties

Pdynamic ≈ N * C * V2 * f * A


Moore and Dennard1975

Yield

Miniaturization

Die Size increase

Device design

Circuit Design

Die layout

Moore

Transistor economics

1. Per die

2. Per product

Scaling

Voltage reduction

Current Increase

Capacitance reduction

Delay time decrease

Power reduction

Dennard

Transistor performance

1. Faster

2. Lower power

5

E3S P.GarginiOCTOBER 2017 6


Gate Delay Continues to Improve

7pS

3pS

2pS


First Age of Scaling(Self-aligned Silicon Gate)

Phase 1

9

~1975-2002


The Incredible Shrinking Silicon Technology of the 90’s

0.35 µ

Gate

Salicide

Spacer

Salicide

1995 m0.25

Salicide

Gate Spacer

Salicide

1997 0.18µ

Gate Spacer

Salicide

Salicide

1999


NTRS1991,1992,1994 and1997

11


~20-25 Years Later

1975-1997

12


Gate Dielectric Scaling

1

2

3

To

x e

qu

iva

len

t (n

m)

4 8 12

Monolayers

4

0

1999

2001

2003

2005

1997 NTRS

You Are Here!

Silicon substrate

1.2nm SiO2

Gate

From My Files

13


The Power of Trends

TIME

COST

PAST

PRESENT

FUTURE

TIME

PERFORMANCE

PAST

PRESENT

FUTURE

14


Audience Reaction to the News

15


ITRS 1.0

1998

16


Second Age of Scaling:(Equivalent Scaling)

Phase 2

17


The Ideal MOS Transistor

From My Files

Fully Surrounding

Metal Electrode

High-K

Gate Insulator

Fully Enclosed,

Depleted

Semiconductor

Low Resistance

Source/Drain

DrainSource

Metal Gate Insulator

Band Engineered

Semiconductor

18


Incubation Time

EarlyInvention

FocusedResearch

IntroductionManufacturing

Strained Silicon 1992 1998 2003

HKMG 1996 1998 2007

Raised S/D 1993 1998 2009

MultiGates 1988 2000 2011~11 years

DrainSource


1998

20

$$$


2011

FinFET


~20-25 Years Later

1997-2025

22


5

7

10

Te

ch

no

log

y N

od

e (

nm

)

2017 2015 2013

14

2019

2013 ITRS

2021

3

1

Technology Node Scaling

Today’s Challenge

23


The Power of Trends

TIME

COST

PAST

PRESENT

FUTURE

TIME

PERFORMANCE

PAST

PRESENT

FUTURE

24



3D Manhattan Solution

26

E3S P.GarginiOCTOBER 2017 27Kinam Kim, IEEE Fellow, President Samsung Electronics

27


Mask Count Reduction due to 3D architecture

28


ITRS 2.0

http://www.itrs2.net

29


NAND Flash

Year of Production 2015 2016 2020 2022 2024 2028 20302D NAND Flash uncontacted poly 1/2 pitch – F (nm) 15 14 12 12 12 12 12

3D NAND minimum array 1/2 pitch - F(nm) 80nm 80nm 80nm 80nm 80nm 80nm 80nm

Number of word lines in one 3D NAND string 32 32-48 64-96 96-128 128-192 256-384 384-512

Dominant Cell type (FG, CT, 3D, etc.) FG/CT/3D FG/CT/3D FG/CT/3D FG/CT/3D FG/CT/3D FG/CT/3D FG/CT/3D

Product highest density (2D or 3D) 256G 384G 768G 1T 1.5T 3T 4T

3D NAND number of memory layers 32 32-48 64-96 96-128 128-192 256-384 384-512

Maximum number of bits per cell for 2D NAND 3 3 3 3 3 3 3

Maximum number of bits per cell for 3D NAND 3 3 3 3 3 3 3

30

ITRS 2.0


From NTRS to ITRS to ITRS 2.0 to IRDS

The IRDS is the ONLY roadmap that represents the

continuation, enhancement and evolution of ITRS.

http://irds.ieee.org/

2016


Monolithic Heterogeneous Computing Architecture

32


Multigate FET Offers a Simple Way

for Scaling and Improving Performance

5 4 3

Semicon Japan, December 6, 2013

33


Mark Bohr, August 11, 2014

Fin FET Scaling

70%



35

Accelerated Fin FET Scaling

35%



36


March 2017

Fin Height= 34nm Fin Height= 42nm Fin Height= 53nm

37

FIN Height Growing at ~25%/generation


LOGIC AREA SCALING

March 2017


LOGIC AREA SCALING

March 2017

~0.37


March 2017


~0.59

41

March 2017


Layout Comparison: Logic vs. SRAM

42


SRAM Memory Cell

C1C2


P

H

MG

2016 IEDM

45

T1

T2

T6

T5

T3 T4


“7 nm”

108nm

110nm

P

H

MG

48


T1

T2

T6

T5

T3 T4


The Power of Trends

TIME

COST

PAST

PRESENT

FUTURE

TIME

PERFORMANCE

PAST

PRESENT

FUTURE

52



2D-> (0.59)n1 = 0.12 n1=4

3D(2)-> (0.59) n2=0.044

3D(4)-> (0.59) n3=0.0028

Compounded area reduction vs.

number of generations

n2=6

n3=11

53


2D-> (0.50)n1 = 0.12 N1=3

3D(2)-> (0.50) n2=0.044

3D(4)-> (0.50) n3=0.0028

Compounded area reduction vs.

number of generations

N2=5

N3=9

54


Layout Comparison: Logic vs. SRAM

55


3nm Universal Logic LayoutL/C=10nm L/C, S= 10-15nm

56


~20-25 Years Later

2025-2040

57


Third Age of Scaling(3D Power Scaling)

Phase 3

58


3D

59

ITRS 2.0->IRDS


The Different Ages of Scaling(Different methods for different times)

① Geometrical Scaling (1975-2002)① Reduction of horizontal and vertical physical dimensions in

conjunction with improved performance of planar transistors

② Equivalent Scaling (2003~2024)① Reduction of only horizontal dimensions in conjunction with

introduction of new materials and new physical effects. New vertical structures replace the planar transistor

③ 3D Power Scaling (2025~2040)① Transition to complete vertical device structures.

Heterogeneous integration in conjunction with reduced power consumption become the technology drivers

60


The Ideal MOS Transistor (2025~2040)

From My Files

Fully Surrounding

Metal Electrode

High-K

Gate Insulator

Fully Enclosed,

Depleted

Semiconductor

Low Resistance

Source/DrainBand Engineered

Semiconductor

DrainSource


61


“How Long will the Industry

Delay the Conversion to

3D Monolithic Integration ?”

62

Thank you!

From ITRS 2.0 to IRDS” · OCTOBER 2017 E3S P.Gargini Paolo Gargini Chairman IRDS, IEUVI Fellow...

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