Freescale Semiconductor Document Number: MRF6S18140H ...

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MRF6S18140HR3 MRF6S18140HSR3

1RF Device DataFreescale Semiconductor

RF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETs

Designed for N-CDMA base station applications with frequencies from 1805to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica‐tions. To be used in Class AB for PCN- PCS/cellular radio and WLL applica‐tions.

• Typical 2-Carrier N-CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA,Pout = 29 Watts Avg., f = 1877.5 MHz, IS-95 CDMA (Pilot, Sync, Paging,Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.�Power Gain — 16 dB�Drain Efficiency — 27.5%�IM3 @ 2.5 MHz Offset — -36 dBc in 1.2288 MHz Bandwidth �ACPR @ 885 kHz Offset — -50.5 dBc in 30 kHz Bandwidth

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1840 MHz, 140 Watts CWOutput Power

Features• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use• Qualified Up to a Maximum of 32 VDD Operation• Integrated ESD Protection• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth

Applications• RoHS Compliant• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain-Source Voltage VDSS -0.5, +68 Vdc

Gate-Source Voltage VGS -0.5, +12 Vdc

Storage Temperature Range Tstg -�65 to +150 °C

Case Operating Temperature TC 150 °C

Operating Junction Temperature (1,2) TJ 225 °C

Table 2. Thermal Characteristics

Characteristic Symbol Value (2,3) Unit

Thermal Resistance, Junction to CaseCase Temperature 80°C, 140 W CWCase Temperature 73°C, 29 W CW

RθJC0.310.35

°C/W

��1. Continuous use at maximum temperature will affect MTTF.��2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product.��3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

Document Number: MRF6S18140HRev. 1.1, 12/2009

Freescale SemiconductorTechnical Data

MRF6S18140HR3MRF6S18140HSR3

1805-1880 MHz, 29 W AVG., 28 V2 x N-CDMA

LATERAL N-CHANNELRF POWER MOSFETs

CASE 465C-02, STYLE 1NI-880S

MRF6S18140HSR3

CASE 465B-03, STYLE 1NI-880

MRF6S18140HR3

© Freescale Semiconductor, Inc., 2006, 2008-2009. All rights reserved.

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2RF Device Data

Freescale Semiconductor


Table 3. ESD Protection Characteristics

Test Methodology Class

Human Body Model (per JESD22-A114) 2 (Minimum)

Machine Model (per EIA/JESD22-A115) A (Minimum)

Charge Device Model (per JESD22-C101) IV (Minimum)

Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current(VDS = 68 Vdc, VGS = 0 Vdc)

IDSS — — 10 μAdc

Zero Gate Voltage Drain Leakage Current(VDS = 28 Vdc, VGS = 0 Vdc)

IDSS — — 1 μAdc

Gate-Source Leakage Current(VGS = 5 Vdc, VDS = 0 Vdc)

IGSS — — 1 μAdc

On Characteristics

Gate Threshold Voltage(VDS = 10 Vdc, ID = 300 μAdc)

VGS(th) 1.2 2 2.7 Vdc

Gate Quiescent Voltage(VDD = 28 Vdc, ID = 1200 mAdc, Measured in Functional Test)

VGS(Q) 2 2.7 3.8 Vdc

Drain-Source On-Voltage(VGS = 10 Vdc, ID = 3 Adc)

VDS(on) 0.1 0.22 0.3 Vdc

Dynamic Characteristics (1)

Reverse Transfer Capacitance(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Crss — 2.2 — pF

Output Capacitance(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Coss — 685 — pF

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 29 W Avg., f1 = 1877.5 MHz, f2 =1880 MHz, 2-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHzOffset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF.

Power Gain Gps 15 16 18 dB

Drain Efficiency ηD 25.5 27.5 — %

Intermodulation Distortion IM3 — -36 -34.5 dBc

Adjacent Channel Power Ratio ACPR — -50.5 -48 dBc

Input Return Loss IRL — -10.5 — dB

��1. Part internally matched both on input and output.

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Figure 1. MRF6S18140HR3(HSR3) Test Circuit Schematic

Z13 0.108″ x 1.070″ MicrostripZ14 0.960″ x 0.046″ MicrostripZ15 0.084″ x 0.046″ MicrostripZ16 0.996″ x 0.080″ MicrostripZ17 1.015″ x 0.080″ MicrostripZ18 0.099″ x 1.070″ MicrostripZ19 0.516″ x 1.070″ MicrostripZ20 0.292″ x 0.288″ MicrostripZ21 0.198″ x 0.114″ MicrostripZ22 0.372″ x 0.080″ MicrostripZ23 1.181″ x 0.080″ MicrostripPCB DS Electronics GX0300, 0.030″, εr = 2.55

Z1 0.166″ x 0.082″ MicrostripZ2 0.250″ x 0.334″ MicrostripZ3 0.140″ x 0.340″ MicrostripZ4 0.092″ x 0.164″ MicrostripZ5 0.130″ x 0.234″ MicrostripZ6 0.109″ x 0.082″ MicrostripZ7 0.070″ x 0.082″ MicrostripZ8 0.350″ x 0.644″ MicrostripZ9 0.092″ x 0.420″ MicrostripZ10 0.720″ x 0.082″ MicrostripZ11 0.090″ x 0.485″ x 0.580″ TaperZ12 0.342″ x 1.070″ Microstrip

VBIAS

VSUPPLY

RFOUTPUT

RFINPUT

DUT

C4

R3

Z4 Z5 Z6 Z7

C1

Z8

R5Z16

Z13

Z19

Z9

Z20

C2

C10 C12 C13 C16

+

C6

Z21 Z22 Z23

B1

R1

C11 C14 C15

Z18

Z17Z12

Z14

Z15

Z11Z10Z1 Z2 Z3

C8

+

C5

R4

R6C3

B2

R2

C9

+

C7

Table 5. MRF6S18140HR3(HSR3) Test Circuit Component Designations and ValuesPart Description Part Number Manufacturer

B1, B2 47 Ω, 100 MHz Small Ferrite Beads, Surface Mount 2743019447 Fair-Rite

C1, C2 39 pF Chip Capacitors ATC700B390FT500XT ATC

C3 0.1 pF Chip Capacitor ATC100B0R1BT500XT ATC

C4, C5, C12, C13,C14, C15

10 μF, 50 V Chip Capacitors GRM55DR61H106KA88B Murata

C6, C7, C10, C11 9.1 pF Chip Capacitors ATC100B9R1BT500XT ATC

C8, C9 47 μF, 50 V Electrolytic Capacitors EMVY500ADA470MF80G Nippon Chemi-Con

C16 470 μF, 63 V Electrolytic Capacitor EMVY630GTR471MMH0S Nippon Chemi-Con

R1, R2 12 Ω, 1/4 W Resistors CRCW120612R0FKEA Vishay

R3, R4 1.0 KΩ, 1/4 W Resistors CRCW12061001FKEA Vishay

R5, R6 560 KΩ, 1/4 W Chip Resistors CRCW12065602FKEA Vishay

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4RF Device Data



Figure 2. MRF6S18140HR3(HSR3) Test Circuit Component Layout

+

C8

R5

R1B1R3 C6

C4

C1

C9

R6

R4

B2 R2

C5 C3

C11

C14 C15

C2

C10 C12 C13

C16

CU

T O

UT

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EA

MRF6S18140H/HSRev. 1

+

C7

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TYPICAL CHARACTERISTICS

IRL,

INPU

T R

ETU

RN

LO

SS (d

B)

IM3

(dBc

), AC

PR (d

Bc)

19201760

IRL

Gps

ACPR

IM3

f, FREQUENCY (MHz)

Figure 3. 2-Carrier N-CDMA Broadband Performance @ Pout = 29 Watts Avg.

-20

0

-4

-8

-12

VDD = 28 Vdc, Pout = 29 W (Avg.)IDQ = 1200 mA, 2-Carrier N-CDMA2.5 MHz Carrier Spacing, 1.2288 MHzChannel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF)

18801840180014.8

16.8

-54

30

29

28

26

-24

-30

-36

-42

η D, D

RAI

NEF

FIC

IEN

CY

(%)

ηD

Gps

, PO

WER

GAI

N (d

B)

16.6

16.4

16.2

16

15.8

15.6

15.4

15.2

15

1780 1820 1860 1900

27

-48 -16

IRL,

INPU

T R

ETU

RN

LO

SS (d

B)

IM3

(dBc

), AC

PR (d

Bc)

19201760

IRL

Gps

ACPR

IM3

f, FREQUENCY (MHz)

Figure 4. 2-Carrier N-CDMA Broadband Performance @ Pout = 60 Watts Avg.

-20

0

-4

-8

-12

VDD = 28 Vdc, Pout = 60 W (Avg.)IDQ = 1200 mA, 2-Carrier N-CDMA2.5 MHz Carrier Spacing, 1.2288 MHzChannel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF)

18801840180014.4

16.4

-42

42

41

40

38

-12

-18

-24

-30

η D, D

RAI

NEF

FIC

IEN

CY

(%)

ηD

Gps

, PO

WER

GAI

N (d

B)

16.2

16

15.8

15.6

15.4

15.2

15

14.8

14.6

1780 1820 1860 1900

39

-36 -16

Figure 5. Two-T one Power Gain versusOutput Power

10013

19

1

IDQ = 1800 mA

1500 mA

VDD = 28 Vdcf1 = 1838.75 MHz, f2 = 1841.25 MHzTwo-Tone Measurements, 2.5 MHz Tone Spacing

18

17

15

10 400

Pout, OUTPUT POWER (WATTS) PEP

Gps

, PO

WER

GAI

N (d

B)

14

16

900 mA

1200 mA

600 mA

Figure 6. Third Order Intermodulation Distortionversus Output Power

-1 0

1 100

-2 0

-3 0

-4 0

400-60

-5 0

VDD = 28 Vdcf1 = 1838.75 MHz, f2 = 1841.25 MHzTwo-Tone Measurements, 2.5 MHz Tone Spacing

10


INTE

RM

OD

ULA

TIO

N D

ISTO

RTIO

N (d

Bc)

IMD

, TH

IRD

OR

DER

IDQ = 600 mA

1500 mA900 mA1200 mA

1800 mA

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6RF Device Data




Figure 7. Intermodulation Distortion Productsversus Output Power


IMD

, IN

TER

MO

DU

LATI

ON

DIS

TORT

ION

(dBc

)

-70

-10

1 100

-40

-50

10

-30

-20

-60 7th Order

VDD = 28 Vdc, IDQ = 1200 mAf1 = 1838.75 MHz, f2 = 1841.25 MHzTwo-Tone Measurements

5th Order

3rd Order

Figure 8. Intermodulation Distortion Productsversus Tone Spacing

10

0

TWO-T ONE SPACING (MHz)

VDD = 28 Vdc, Pout = 140 W (PEP), IDQ = 1200 mATwo-Tone Measurements, (f1 + f2)/2 = Center Frequency of 1840 MHz

IM7-U

-3 0

-4 0

-5 0

1 100

IMD

, IN

TER

MO

DU

LATI

ON

DIS

TORT

ION

(dBc

)

Figure 9. Pulsed CW Output Power versusInput Power

44

60

33

Pin, INPUT POWER (dBm)

VDD = 28 Vdc, IDQ = 1200 mAPulsed CW, 12 μsec(on), 1% Duty Cyclef = 1840 MHz

58

56

54

52

4934 3635 3837 4139

Actual

Ideal

P1dB = 52.6 dBm (182.64 W)

59

57

53

55

40 4232

P out

, OU

TPU

T PO

WER

(dBm

)

P6dB = 53.90 dBm (245.47 W)

Figure 10. 2-Carrier N-CDMA ACPR, IM3, Power Gainand Drain Efficiency versus Output Power

0 -70

Pout, OUTPUT POWER (WATTS) CW

50 -20

25

-30

20

-35

15

-50

5 -65

1 10 100

-55

10

-30 �C

25�C

85�C

IM3

ηD

Gps

TC = -30�C

ACPR

η D, D

RAI

N E

FFIC

IEN

CY

(%),

Gps

, PO

WER

GAI

N (d

B)

IM3

(dBc

), AC

PR (d

Bc)

50

P3dB = 53.36 dBm (216.77 W)

400

IM7-LIM5-L

IM5-U IM3-L

IM3-U

-2 0

-1 0

43

51

30

35

40

45

-60

-45

-40

-2525�C

85�C

VDD = 28 Vdc, IDQ = 1200 mAf1 = 1838.75 MHz, f2 = 1841.25 MHz2-Carrier N-CDMA, 2.5 MHz CarrierSpacing, 1.2288 MHz ChannelBandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF)

-6 0

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10012

10

66


Figure 11. Power Gain and Drain Efficiencyversus CW Output Power

VDD = 28 VdcIDQ = 1200 mAf = 1840 MHz

TC = -30�C

25�C

10

18

17

16

15

14

55

44

33

22

11

η D, D

RAI

N EF

FIC

IEN

CY

(%)

Gps

ηD

Gps

, PO

WER

GAI

N (d

B)

13

400

85�C

-30 �C25�C

85�C

Figure 12. Power Gain versus Output Power


Gps

, PO

WER

GAI

N (d

B)

13

17

0 260

15

14

100 200

16

VDD = 24 V 28 V 32 V

IDQ = 1200 mAf = 1840 MHz

Figure 13. MTTF Factor versus Junction Temperature

250

108

90

TJ, JUNCTION TEMPERATURE (°C)

This above graph displays calculated MTTF in hours when the deviceis operated at VDD = 28 Vdc, Pout = 29 W Avg., and ηD = 27.5%.

MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTFcalculators by product.

107

106

105

110 130 150 170 190

MTT

F (H

OU

RS)

210 230

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8RF Device Data



N-CDMA TEST SIGNAL

100.0001

100

0

PEAK-T O-A VERAGE (dB)

Figure 14. 2-Carrier CCDF N-CDMA

10

1

0.1

0.01

0.001

2 4 6 8

IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±885 kHz Offset. IM3 Measured in 1.2288 MHzBandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @0.01% Probability on CCDF.

PRO

BABI

LITY

(%)

f, FREQUENCY (MHz)

-100

0

Figure 15. 2-Carrier N-CDMA Spectrum

-1 0

-2 0

-3 0

-4 0

-5 0

-6 0

-7 0

-8 0

-9 0

-ACPR in 30 kHzIntegrated BW

+ACPR in 30 kHzIntegrated BW

-IM3 in1.2288 MHz

Integrated BW

+IM3 in1.2288 MHz

Integrated BW

1.2288 MHzChannel BW

61.5 4.530-1.5-3-4.5-6-7.5 7.5

(dB)

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Zo = 10 ΩZload

f = 1920 MHzZsource

f = 1760 MHz

f = 1760 MHz

f = 1920 MHz

VDD = 28 Vdc, IDQ = 1200 mA, Pout = 29 W Avg.

fMHz

Zsource�

Zload�

1760 1.454 - j6.703 1.344 - j2.479

1780 1.465 - j6.511 1.338 - j2.299

1800 1.467 - j6.336 1.333 - j2.129

1820 1.448 - j6.193 1.325 - j1.966

1840 1.440 - j6.049 1.308 - j1.801

1860 1.414 - j5.938 1.301 - j1.687

1880 1.377 - j5.827 1.303 - j1.550

1900 1.311 - j5.710 1.301 - j1.419

1920 1.231 - j5.583 1.289 - j1.303

Zsource = Test circuit impedance as measured from gate to ground.

Zload = Test circuit impedance as measured from drain to ground.

Figure 16. Series Equivalent Source and Load Impedance

Z source Z load

InputMatchingNetwork

DeviceUnderTest

OutputMatchingNetwork

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10RF Device Data



PACKAGE DIMENSIONS

CASE 465B-03ISSUE DNI-880

MRF6S18140HR3

NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M-1994.2. CONTROLLING DIMENSION: INCH.3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY

FROM PACKAGE BODY.4. DELETED

DIM MIN MAX MIN MAXMILLIMETERSINCHES

A 1.335 1.345 33.91 34.16B 0.535 0.545 13.6 13.8C 0.147 0.200 3.73 5.08D 0.495 0.505 12.57 12.83E 0.035 0.045 0.89 1.14F 0.003 0.006 0.08 0.15G 1.100 BSC 27.94 BSCH 0.057 0.067 1.45 1.70K 0.170 0.210 4.32 5.33

N 0.871 0.889 19.30 22.60Q .118 .138 3.00 3.51R 0.515 0.525 13.10 13.30

STYLE 1:PIN 1. DRAIN

2. GATE 3. SOURCE

1

3

2

D

G

K

C

E

H

F

Q2X

MAMbbb B MT

MAMbbb B MT

B

B(FLANGE)

SEATINGPLANE

MAMccc B MT

MAMbbb B MT

A A(FLANGE)

T

N (LID)

M (INSULATOR)

S

MAMaaa B MT

(INSULATOR)

R

MAMccc B MT

(LID)

S 0.515 0.525 13.10 13.30

M 0.872 0.888 22.15 22.55

aaa 0.007 REF 0.178 REFbbb 0.010 REF 0.254 REFccc 0.015 REF 0.381 REF

CASE 465C-02ISSUE DNI-880S

MRF6S18140HSR3

NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M-1994.2. CONTROLLING DIMENSION: INCH.3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY

FROM PACKAGE BODY.

DIM MIN MAX MIN MAXMILLIMETERSINCHES

A 0.905 0.915 22.99 23.24B 0.535 0.545 13.60 13.80C 0.147 0.200 3.73 5.08D 0.495 0.505 12.57 12.83E 0.035 0.045 0.89 1.14F 0.003 0.006 0.08 0.15H 0.057 0.067 1.45 1.70K 0.170 0.210 4.32 5.33

N 0.871 0.889 19.30 22.60R 0.515 0.525 13.10 13.30

STYLE 1:PIN 1. DRAIN

2. GATE 3. SOURCE

1

SEATINGPLANE

2

D

K

C

E

H

F

MAMbbb B MT

B

B(FLANGE)

MAMccc B MT

MAMbbb B MT

A A(FLANGE)

T

N (LID)

M (INSULATOR)

MAMccc B MT

MAMaaa B MT

R (LID)

S (INSULATOR)S 0.515 0.525 13.10 13.30

M 0.872 0.888 22.15 22.55

bbb 0.010 REF 0.254 REFccc 0.015 REF 0.381 REF

aaa 0.007 REF 0.178 REF

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PRODUCT DOCUMENTATION

Refer to the following documents to aid your design process.

Application Notes

• AN1955: Thermal Measurement Methodology of RF Power Amplifiers

Engineering Bulletins• EB212: Using Data Sheet Impedances for RF LDMOS Devices

REVISION HISTORY

The following table summarizes revisions to this document.

Revision Date Description

0 Sept. 2006 • Initial Release of Data Sheet

1 Dec. 2008 • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notificationnumber, PCN13232, p. 1, 2

• Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionalityis standard, p. 1

• Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), and added “Measured inFunctional Test”, On Characteristics table, p. 2

• Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant partnumbers, p. 3

• Adjusted scale for Fig. 8, Intermodulation Distortion Products versus Tone Spacing, to show wider dynamicrange, p. 6

• Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listedoperating characteristics and location of MTTF calculator for device, p. 7

1.1 Dec. 2009 • Corrected data sheet to reflect RF Test Reduction frequency described in Product and Process ChangeNotification number, PCN13232, p. 1, 2

• Data sheet archived. Part no longer manufactured.

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12RF Device Data



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Document Number: MRF6S18140HRev. 1.1, 12/2009

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