FQPF11N50CF

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November 2013

Thermal Characteristics

Symbol Parameter FQPF11N50CF Unit

RJC Thermal Resistance, Junction to Case, Max. 2.58 oC/WRJA Thermal Resistance, Junction to Ambient, Max. 62.5

FQPF11N50CF

N-Channel QFET ® FRFET ® MOSFET500 V, 11 A, 550 mΩ

Description

F QP F 1 1

N 5 0 C F

—N- C h ann el QF E T ®F RF E T ®M O S F E T

©2005 Fairchild Semiconductor CorporationFQPF11N50CF Rev. C1

www.fairchildsemi.com1

•

•

•

100% Avalanche Tested•

• Fast Recovery Body Diode

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor’s proprietary

planar stripe and DMOS technology. This advanced

MOSFET technology has been especially tailored to

reduce on-state resistance, and to provide superior

switching performance and high avalanche energy

strength. These devices are suitable for switched mode

power supplies, active power factor correction (PFC),

and electronic lamp ballasts.

Features

11 A, 500 V, RDS(on) = 550 mΩ (Max.) @ VGS = 10 V,

ID = 5.5 A

Low Gate Charge (Typ. 43 nC)

Low Crss (Typ. 20 pF)

Absolute Maximum Ratings TC = 25°C unless otherwise noted.

Symbol Parameter Unit

VDSS Drain-Source Voltage V

ID Drain Current - Continuous (TC = 25°C) A

- Continuous (TC = 100°C) A

IDM Drain Current - Pulsed (Note 1) A

VGSS Gate-Source voltage V

E AS Single Pulsed Avalanche Energy (Note 2) mJ

I AR Avalanche Current (Note 1) A

E AR Repetitive Avalanche Energy (Note 1) mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) V/ns

PD Power Dissipation (TC = 25°C) W

- Derate above 25°C W/°C

TJ, TSTG Operating and Storage Temperature Range °C

TL Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds °C

FQPF11N50CF

500

11*

7*

44*

± 30

670

11

19.5

4.5

48

0.39

-55 to +150

300

TO-220F

GD

S

G

S

D

*Drain current limited by maximum junction temperature

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Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FQPF11N50CF TO-220F Tube N/A 50 units

F QP F 1 1

N 5 0 C F —

N- C h ann el QF E T ®F RF E T ®M O S F E T



FQPF11N50CF

Electrical Characteristics TC = 25°C unless otherwise noted.

Symbol Parameter Conditions Min Typ Max Unit

Off CharacteristicsBVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µ A 500 -- -- V

∆BVDSS/ ∆TJ

Breakdown Voltage Temperature

CoefficientID = 250 µ A, Referenced to 25°C

IDSS Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V -- -- 10 µ A

VDS = 400 V, TC = 125°C -- -- 100 µ A

IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On Characteristics

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µ A

RDS(on) Static Drain-Source

On-ResistanceVGS = 10 V, ID = 5.5 A -- 0.48 0.55 Ω

gFS Forward Transconductance VDS = 40 V, ID = 5.5 A -- 15 -- S

Dynamic Characteristics

Ciss Input Capacitance VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

-- 1515 2055 pF

Coss Output Capacitance -- 185 235 pF

Crss Reverse Transfer Capacitance -- 25 30 pF

Switching Characteristics

td(on) Turn-On Delay Time VDD = 250 V, ID = 11 A

RG = 25 Ω

(Note 4)

-- 24 57 ns

tr Turn-On Rise Time -- 70 150 ns

td(off) Turn-Off Delay Time -- 120 250 ns

tf Turn-Off Fall Time -- 75 160 ns

Qg Total Gate Charge VDS = 400 V, ID = 11 A

VGS = 10 V

(Note 4)

-- 43 55 nC

Qgs Gate-Source Charge -- 8 -- nC

Qgd Gate-Drain Charge -- 19 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -- -- 11 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 44 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 11 A -- -- 1.4 V

trr Reverse Recovery Time VGS = 0 V, IS = 11 A

dIF/dt =100 A/µs-- 90 ns

Qrr Reverse Recovery Charge -- 1.5 -- µC

--

-- 0.5 -- V/οC

2.0 4.0 V

--

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 10 mH, I AS = 11 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C

3. ISD ≤ 11

A, di/dt ≤ 200 A/µs, VDD ≤ BVDSS, starting TJ = 25°C4. Essentially independent of operating temperature.

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F QP F 1 1

N 5 0 C F —




Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Currentand Temperatue

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

10-1 0

101

10-1

100

101

VGS

Top : 15.0 V10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

Bottom : 4.5 V

* Notes :

1. 250µs Pulse Test

2. TC = 25°C

I D ,

D r a

i n C u r r e n

t [ A ]

10

VDS

, Drain-Source Voltage [V]

2 4 6 8 10 1210

0

101 150°C

25°C

-55°C

* Notes :

1. VDS

= 40V

2. 250µs Pulse Test

I D ,

D r a

i n C u r r e n

t [ A ]

VGS

, Gate-Source Voltage [V]

0 5 10 15 20 25 30 35 400.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

VGS

= 20V

VGS

= 10V

* Note : TJ = 25°C

R D S ( O N )

[ Ω ] ,

D

r a i n - S o u r c e O n - R e s i s t a n c e

ID, Drain Current [A]

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.610

-1

100

101

25°C

150°C

* Notes :

1. VGS

= 0V

2. 250µs Pulse Test I D

R ,

R e v e r s e

D r a

i n C u r r e n

t [ A ]

VSD

, Source-Drain voltage [V]

0 10 0320 04 500

2

4

6

8

10

12

VDS

= 250V

VDS

= 100V

VDS

= 400V

* Note : ID = 11A

V G S ,

G a

t e - S o u r c e

V o

l t a g e

[ V ]

QG, Total Gate Charge [nC]

10-1 0

101

0

1000

2000

3000

4000C

iss = C

gs + C

gd (C

ds = shorted)

Coss

= Cds

+ Cgd

Crss

= Cgd

* Note ;

1. VGS

= 0 V

2. f = 1 MHz

Crss

Coss

Ciss

C a p a c i t a n c e

s [ p F ]

10

VDS


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F QP F 1 1

N 5 0 C F —




Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

-100 -50 0 50 100 150 2000.8

0.9

1.0

1.1

1.2

* Notes :

1. VGS

= 0 V

2. ID = 250µ A

B V

D S S ,

( N o r m a l i z e d )

D r a i n - S o u r c e B r e a k d o w n V o l t a g e

TJ, Junction Temperature [°C]

-100 -50 0 50 100 150 2000.0

0.5

1.0

1.5

2.0

2.5

3.0

* Notes :1. V

GS = 10 V

2. ID = 5.5 A

R D S ( O N ) ,

( N o r m a l i z e d )

D r a i n - S o u r c e O n - R e s i s t a n c e

TJ, Junction Temperature [

oC]

100

101

102

103

10-2

10

-1

100

101

102

100 ms

1 ms

10µs

DC

10 ms

100µs

Operation in This Area

is Limited by RDS(on)

* Notes :

1. TC = 25

oC

2. TJ = 150

oC

3. Single Pulse

I D ,

D r a

i n C u r r e n

t [ A ]

VDS


25 50 75 100 125 1500

2

4

6

8

10

12

I D ,

D r a i n C u r r e n t [ A ]

TJ, Junction Temperature [

oC]

Figure 11. Transient Thermal Response Curve

1 0-5

1 04-

1 00

1 01

1 0-2

1 0-1

1 00

* N o t e s :

1 . Zθ JC

( t ) = 2 . 5 8oC / W M a x .

2 . D u ty F a Dc to r , = t1/t

2

3 . TJM

- TC

= PD M

* Zθ JC

(t )s i n g l ee pu s e

D = 0 . 5

0 . 0 2

0 .2

0 . 0 5

0 .1

0 . 0 1

1 0-3

1 0-2

1 0-1

t1, S q u a r e W a v e P u l s e D u r a t io n [ s e c ]

t1

PDM

t2

Z θ J C ( t ) , T h e r m a l R e s p o n s e [ o C / W ]

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Figure 12. Gate Charge Test Circuit & Waveform

Figure 13. Resistive Switching Test Circuit & Waveforms

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

VGS

VDS

10%

90%

td(on)

tr

t on t off

td(off) t

f

VDD

10V

VDSRL

DUT

RG

VGS

VGS

VDS

10%

90%

td(on)

tr

t on t off

td(off) t

f

VDD

10V

VDSRL

DUT

RG

VGS

VGS

Charge

VGS

10V

Qg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50KΩ

200nF12V

Same Type

as DUT

Charge

VGS

10V

Qg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50KΩ

200nF12V

Same Type

as DUT

E AS = L I AS2----

2

1--------------------

BVDSS - VDD

BVDSS

VDD

VDS

BVDSS

tp

VDD

I AS

VDS (t)

ID (t)

Time

10V DUT

RG

L

I D

tp

E AS = L I AS2----

2

1E AS = L I AS

2----2

1----2

1--------------------

BVDSS - VDD

BVDSS

VDD

VDS

BVDSS

tp

VDD

I AS

VDS (t)

ID (t)

Time

10V DUT

RG

LL

I DI D

tp

VGSVGS

IG = const. ®

®

F QP F 1 1

N 5 0 C F —

N- C h ann el QF E T

F RF E T

M O S F E T



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Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

+

_

Driver

RGSame Type

as DUT

VGS • dv/dt controlled by RG• ISD controlled by pulse period

VDD

L

I SD

10VVGS

( Driver )

I SD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse Width

Gate Pulse Period--------------------------

DUT

VDS

+

_

Driver

RGSame Type

as DUT

VGS • dv/dt controlled by RG• ISD controlled by pulse period

VDD

LL

I SD

10VVGS

( Driver )

I SD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse Width

Gate Pulse Period--------------------------D =Gate Pulse Width

Gate Pulse Period--------------------------

F QP F 1 1

N 5 0 C F —




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Mechanical Dimensions

Figure 16. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner

without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or

obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-

ically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003



F QPF1 1

N 5 0 CF

—N- Ch ann el QFET ®FRFET ®M O SFET

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FQPF11N50CF

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