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○c 2012 ROHM Co., Ltd. All rights reserved. 2012.01 - Rev.C

For Muting (20V, 0.3A) 2SD2704K

Features Dimensions (Unit : mm) 1) High DC current gain.

hFE = 820 to 2700 2) High emitter-base voltage.

VEBO = 25V (Min.) 3) Low Ron

Ron= 0.7 (Typ.) Structure Epitaxial planar type NPN silicon transistor Packaging specifications

Package

Code T146

3000

Taping

Basic orderingunit (pieces)

2SD2704K

Type

Absolute maximum ratings (Ta=25C)

Parameter

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

50 V

V

V

A

W

°C

°C

20

25

0.3

0.2

150

−55 to +150

Symbol Limits Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature Electrical characteristics (Ta=25C)

Parameter Symbol

BVCBO

BVCEO

BVEBO

ICBO

IEBO

VCE(sat)

fT∗Cob

Min.

50

20

25

−

−

−

−

−

−

−

−

−

−

50

35

3.9

−

−

−

0.1

0.1

100

−

−

V IC=10μA

IC=1mA

IE=10μA

VCB=50V

VEB=25V

IC/IB=30mA/3mA

VCE=6V, IE= −4mA, f=10MHz

VCB=10V, IE=0A, f=1MHz

V

V

μA

μA

hFE 820 − 2700 VCE=2V, IC=4mA−

mV

MHz

pF

Ron − 0.7 − IB=5mA, Vi=100mV(rms), f=1kHzΩ

Typ. Max. Unit Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector-emitter saturation voltage

Transition frequency

Output capacitance

Output On-resistance

∗ Measured using pulse current

(2) (1)

2.8

1.6

0.4

(3)

2.9

1.9

0.95 0.95

0.8

0.15

0.3M

in.

1.1

2SD2704K

(1) Emitter(2) Base(3) Collector

ROHM : SMT3EIAJ : SC-59 Abbreviated symbol : XL

Each lead has same dimensions

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○c 2012 ROHM Co., Ltd. All rights reserved. 2012.01 - Rev.C

Data Sheet 2SD2704K

Electrical characteristic curves

0 0.2 0.4 0.6 0.8 1 1.20.1

0.1

10

100

1000

CO

LLE

CT

OR

CU

RR

EN

T :

IC (m

A)

BASE TO EMITTER VOLTAGE : VBE(ON) (V)

Fig.1 Grounded emitter propagation characteristics ( Ι )

VCE=2V

25°C

−40°C

Ta=125°C

CO

LLE

CT

OR

CU

RR

EN

T :

IC (m

A)

Fig.2 Grounded emitter propagation characteristics ( ΙΙ )

0 0.2 0.4 0.6 0.8 1 1.20.1

0.1

10

100

1000

BASE TO EMITTER VOLTAGE : VBE(ON) (V)

VCE=6V

25°C

−40°C

Ta=125°C

1 10 100 100010

100

1000

10000

Ta= −40°C

Ta=25°C

Ta=125°C

DC

CU

RR

EN

T G

AIN

: hF

E

COLLECTOR CURRENT : IC (mA)

Fig.3 DC current gain vs. collector current ( )

VCE=2V

DC

CU

RR

EN

T G

AIN

: hF

E

COLLECTOR CURRENT : IC (mA)

Fig.4 DC current gain vs. collector current ( )

1 10 100 100010

100

1000

10000

Ta= −40°C

Ta=25°C

Ta=125°C

VCE=6V

1 10 100 10001

100

10

1000

10000

Ta= −40°C

Ta=25°C

Ta=125°C

COLLECTOR CURRENT : IC (mA)

Fig.5 Collector-emitter saturation voltage vs. collector current ( )

IC/IB=10/1

CO

LLEC

TOR

SAT

UR

ATIO

N V

OLT

AGE

: VC

E(sa

t) (m

V)

1 10 100 10001

100

10

1000

10000

Ta= −40°C

Ta=25°C

Ta=125°C

COLLECTOR CURRENT : IC (mA)

IC/IB=20/1

CO

LLEC

TOR

SAT

UR

ATIO

N V

OLT

AGE

: VC

E(sa

t) (m

V)

Fig.6 Collector-emitter saturation voltage vs. collector current ( )

1 10 100 10001

100

10

1000

10000

Ta= −40°C

Ta=25°C

Ta=125°C

COLLECTOR CURRENT : IC (mA)

IC/IB=50/1

CO

LLEC

TOR

SAT

UR

ATIO

N V

OLT

AGE

: VC

E(sa

t) (m

V)

Fig.7 Collector-emitter saturation voltage vs. collector current ( )

Fig.8 Base-emitter saturation voltage vs. collector current ( )

1 10 100 1000100

1000

10000

Ta= −40°C

Ta=25°CTa=125°C

COLLECTOR CURRENT : IC (mA)

IC/IB=10/1

BA

SE

SA

TU

RA

TIO

N V

OLT

AG

E :

VB

E(s

at) (m

V)

Fig.9 Base-emitter saturation voltage vs. collector current ( )

COLLECTOR CURRENT : IC (mA)

BA

SE

SA

TU

RA

TIO

N V

OLT

AG

E :

VB

E(s

at) (m

V)

1 10 100 1000100

1000

10000

Ta= −40°C

Ta=25°CTa=125°C

IC/IB=20/1

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Data Sheet 2SD2704K

Fig.10 Base-emitter saturation voltage vs. collector current ( )

COLLECTOR CURRENT : IC (mA)

BA

SE

SA

TU

RA

TIO

N V

OLT

AG

E :

VB

E(s

at) (m

V)

1 10 100 1000100

1000

10000

Ta= −40°C

Ta=25°CTa=125°C

IC/IB=50/1

Fig.11 Gain bandwidth product vs. emitter current

1 10 1001

10000Ta=25°Cf=50MHzIE=0A

EMITTER CURRENT : IE (mA)

TR

AN

SIT

ION

FR

EQ

UE

NC

Y :

fT (M

Hz)

Fig.12 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage

CO

LLE

CT

OR

OU

TP

UT

CA

PA

CIT

AN

CE

: C

ob (

pF)

EM

ITT

ER

IN

PU

T C

AP

AC

ITA

NC

E :

Cib

(pF

)

COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V)

1 10 1000.1

1

10

100Ta=25°Cf=1MHzIE=0A

0.01 0.1 1 100100.1

1

100

10

Fig.13 Output-on resistance vs. base current ( )

Ta= 25°C

See Fig.15

ON

RE

SIS

TA

NC

E :

Ron

(Ω

)

BASE CURRENT : IB (mA)

0.01 0.1 1 100100.1

1

100

10

Fig.14 Output-on resistance vs. base current ( )

Ta= 25°C

See Fig.16

ON

RE

SIS

TA

NC

E :

Ron

(Ω

)

BASE CURRENT : IB (mA)

Ron measurement circuit

Ron= ×RLv0

v0

vi−v0

RL=1kΩ

IB

OutputInput

100mV(rms)1V(rms)f=1kHz

Vi V

Fig.15 Ron measurement circuit ( )

Ron= ×RLv0

v0

vi−v0

RL=1kΩ

IB

OutputInput

100mV(rms)1V(rms)f=1kHz

ViV

Fig.16 Ron measurement circuit ( ) This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit.

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