Trends in the Wet and Dry Deposition of Nitrogen and Sulfur Species Christopher Lehmann.
Film Deposition Part VI: Wet Process · 2021. 1. 4. · Solution based Deposition 3 'wet' process....
Transcript of Film Deposition Part VI: Wet Process · 2021. 1. 4. · Solution based Deposition 3 'wet' process....
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Xing Sheng, EE@Tsinghua
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Xing Sheng盛兴
Department of Electronic EngineeringTsinghua University
Film DepositionPart VI: Wet Process
Principles of Micro- and Nanofabrication for Electronic and Photonic Devices
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Xing Sheng, EE@Tsinghua
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Film Deposition
PVD: Physical Vapor DepositionCVD: Chemical Vapor Deposition 'dry' process
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Solution based Deposition
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'wet' process
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Copper - electroplating
Silver - electroless plating
Liquid Phase Epitaxy (LPE)
Spin-on glass
Organics / Quantum Dots
Examples
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Interconnects for CMOS
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copper replaces aluminum below 130 nm
Q: why?
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Interconnects for CMOS
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Aluminum
conductive reliable and stable easy deposition easy etching low diffusivity in Si
and SiO2 good adhesion with
Si and SiO2 low cost ...
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Xing Sheng, EE@Tsinghua
Interconnects for CMOS
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Copper
more conductive
Aluminum
conductive reliable and stable easy deposition easy etching low diffusivity in Si
and SiO2 good adhesion with
Si and SiO2 low cost ...
Copper wins!
vs.
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Interconnects for CMOS
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Reduces RC circuit delay, reduce power consumption
- Al is cheap and easy to deposit- Ag and Au are expensive- Cu is cheap and conductive- Carbon (graphene) is the best
what is next, Ag or Carbon?
above 130 nm
below 130 nm 60Copper (Cu)
43Gold (Au)
38Aluminum (Al)
63Silver (Ag)
100Graphene (C)
Conductivity (106 S/m)
Materials
RIP
RCt2~
~
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Step Coverage
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CVD is preferred for via fillingAl, W can be deposited by CVDbut CVD Cu is very difficult ...
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Copper Electroplating (电镀)
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Printed Circuit Board
五毛
Video
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Copper Electroplating (电镀)
11F. Wang, et al., Sci. Rep. 7, 46639 (2017)
Cu
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Damascene Process for Cu
12P. C. Andricacos, et al., IBM J. Res. Develop. 42, 567 (1998)
Cu
SiO2
ancient art work
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Damascene Process for Cu
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Electroplating + CMPdirtiest process for the most advanced IC
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Electroless Plating
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silver mirror reaction
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Liquid Phase Epitaxy (LPE) 2Ga (l) + 2AsCl3 (l) = 2GaAs (s) + 3Cl2 (g)
LPE - Liquid Phase Epitaxy
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Spin-on Glass (SOG)
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form SiO2 from solvent
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Porous SiO2 for Low Dielectric
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SiO2 = 3.9
air = 1.0
prepared by spin-on methods
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Organic Solar Cells
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OLEDs
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Fully Solution Processed Devices
20J. Choi, et al., Science 352, 205 (2016)
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Colloidal Quantum Dots
21J. Bao and M. G. Bawendi, Nature 523, 67 (2015)
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Perovskites (钙钛矿)
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deposit by spin coating or evaporation
> 20 Nature/Science papers every year
solar cells LEDs