Field Effect Transistors. Introduction Two main types of FET: - JFET –Junction field effects...

Field Effect Transistors

Introduction• Two main types of FET:

- JFET –Junction field effects transistor- MOSFET – Metal oxide semiconductor field effect transistor

- D-MOSFET ~ Depletion MOSFET- E-MOSFET ~ Enhancement MOSFET

• Similarities: -Amplifiers-Switching devices

-Impedance matching circuits• Differences: -FET’s are voltage controlled devices whereas BJT’s are current controlled devices.

-FET’s also have a higher input impedance, but BJT’s have higher gains. -FET’s are less sensitive to temperature variations and more easily integrated on IC’s.

- FET’s are also generally more static sensitive than BJT’s.

Construction and characteristics of JFET

• N-channel device will appear as the prominent device with paragraph and section devoted to the impact of using a p-channel.

• Major part of structure is n-type material.

• Top of the n-type channel is connected through an ohmic contact to a terminal referred to as the drain (D)

• The lower end-connected through an ohmic contact to a terminal referred as source (S)

• P-type materials are connected together and to the gate (G) terminal.

• JFET has two p-n junctions under no-bias conditions.

• JFET operation can be compared to a water faucet:

• The source of water pressure – accumulated electrons at the negative pole of the applied voltage from Drain to Source

• The drain of water – electron deficiency (or holes) at the positive pole of the applied voltage from Drain to Source.

• The control of flow of water – Gate voltage that controls the width of the n-channel, which in turn controls the flow of electrons in the n-channel from source to drain.


N-Channel JFET Circuit Layout


JFET Operating Characteristics

There are three basic operating conditions for a JFET:

A. VGS = 0, VDS increasing to some positive

value

B. VGS < 0, VDS at some positive value

C. Voltage-Controlled Resistor

VGS = 0, VDS increasing to some positive value

Three things happen when VGS = 0

and VDS is increased from 0 to amore positive voltage:

• the depletion region between p-gate and n-channel increases as electrons from n-channel combine with holes from p-gate.

• increasing the depletion region, decreases the size of the n-channel which increases the resistance of the n-channel.

• But even though the n-channel resistance is increasing, the current (ID) from Source to Drain through the

n-channel is increasing. This is because VDS is increasing.

• The flow of charge is relatively uninhibited and limited solely by the resistance of the n-channel between drain and source.

• The depletion region is wider near the top of both p-type materials.

• ID will establish the voltage level through the channel.• The result: upper region of the p-type

material will be reversed biased by about 1.5V with the lower region onlyreversed biased by 0.5V (greater applied reverse bias, the wider depletion region).


• IG=0A p-n junction is reverse-biased for the length of the

channel results in a gate current of zero amperes.

• As the VDS is increased from 0 to a few volts, the current will

increase as determined by Ohm’s Law.

• VDS increase and approaches a level referred to as Vp, the

depletion region will widen, causing reduction in the channel width. (p large, n small).

• Reduced part of conduction causes the resistance to increase.

• If VDS is increased to a level where it appears that the 2

depletion regions would touch (pinch-off)


• Vp = pinch off voltage.• ID maintain the saturation level

defined as IDSS

• Once the VDS > VP, the JFET has the characteristics of a current source.

• As shown in figure, the current is

fixed at ID = IDSS, the voltage VDS (for

level >Vp) is determined by the

applied load.

• IDSS is derived from the fact that it is

the drain-to-source current with short circuit connection from gate to source.

• IDSS is the max drain current for a JFET

and is defined by the conditions

VGS=0V and VDS > | Vp|.


At the pinch-off point: • any further increase in VGS

does not produce any increase in ID. VGS at pinch-off

is denoted as Vp. • ID is at saturation or

maximum. It is referred to as IDSS.

• The ohmic value of the channel is at maximum.


Typical JFET operation

JFET modeling when ID=IDSS, VGS=0, VDS>VP

VGS < 0, VDS at some positive value

• VGS is the controlling voltage of

the JFET.• For n-channel devices, the

controlling voltage VGS is made

more and more negative from its VGS = 0V level.

• The effect of the applied negative VGS is to establish

depletion regions similar to those obtained with VGS=0V

but a lower level of VDS to

reach the saturation level at a lower level of VDS.

• When VGS = -Vp will be sufficiently negative to establish

saturation level that is essentially 0mA, the device has been ‘turn off’.

• The level of the VGS that results in ID = 0 mA is defined by VGS

= Vp, with Vp being a negative voltage for n-channel devices

and a positive voltage or p-channel JFETs.

• In this region, JFET can actually be employed as a variable resistor whose resistance is controlled by the applied gate to source voltage.

• A VGS becomes more and more negative; the slope of each

curve becomes more and more horizontal.


• The region to the right of the pinch-off locus of the figure is the region typically employed in linear amplifiers (amplifiers with min distortion of the applied signal) and is commonly referred to as the constant-current, saturation, or linear amplification region.


Characteristic curves for N-channel JFET

Voltage-Controlled Resistor

• The region to the left of the pinch-off point is called the ohmic region.

• The JFET can be used as a

variable resistor, where VGS

controls the drain-source

resistance (rd). As VGS

becomes more negative, the resistance (rd) increases.

2

PGS

od

)VV(1

rr

And as summary in practical…

p-Channel JFETS

p-Channel JFET acts the same as the n-channel JFET, except the polarities and currents are reversed.

P-Channel JFET Characteristics

As VGS increases more positively:

• the depletion zone increases

• ID decreases (ID < IDSS)

• eventually ID = 0A

Also note that at high levels of

VDS the JFET reaches a

breakdown situation. IDincreases uncontrollably if

VDS> VDSmax.

JFET Symbols

Transfer Characteristics

• The transfer characteristic of input-to-output is not as straight forward in a JFET as it was in a BJT.

• In a BJT, indicated the relationship between IB (input) and IC (output).

• In a JFET, the relationship of VGS (input) and ID (output) is a little more complicated:

2

P

GSDSSD )

V

V(1II

Transfer Curve

From this graph it is easy to determine the value of ID for a given value of VGS.

Transfer Characteristics

Plotting the Transfer Curve

Shockley’s Equation Methods.• Using IDSS and Vp (VGS(off)) values found in a specification sheet, the

Transfer Curve can be plotted using these 3 steps:

• Step 1:

• Solving for VGS = 0V:

• Step 2:

• Solving for VGS = Vp (VGS(off)):

• Step 3:

• Solving for VGS = 0V to Vp:

2

P

GSDSSD )

V

V(1II

0VVIIGS

DSSD

2

P

GSDSSD )

V

V(1II

PGSD VV0I A

2

P

GSDSSD )

V

V(1II

Shorthand method

VGS ID

0 IDSS

0.3VP IDSS/2

0.5 IDSS/4

VP 0mA

Plotting the Transfer Curve

Specification Sheet (JFETs)

This information is also available on the specification sheet.

Case Construction and Terminal Identification

MOSFETs

MOSFETs have characteristicssimilar to JFETs and additionalcharacteristics that make then very useful.

There are 2 types:1. Depletion-Type MOSFET2. Enhancement-Type

MOSFET

Depletion-Type MOSFET Construction

The Drain (D) and Source (S) connect to the to n-doped regions. These N-doped regions are connected via an n-channel. This n-channel is connected to the Gate (G) via a thin insulating layer of SiO2. The n-doped material lies

on a p-doped substrate that may have an additional terminal connection called SS.

• VGS is set to 0V by the direct

connection from one terminal to the other.

• VDS is applied across the

drain-to-source terminals.• The result is an attraction for

the positive potential at the drain by the free electron of the n-channel and a current similar to that established through the channel of the JFET.

• In the figure, VGS has been

set at a negative voltage (-1V)


• Negative potential at gate will tend to pressure electron towards the p-type substrate and attract holes from the p-type substrate.

• Depending on negative bias established by VGS, a level recombination between electron and hoes will occur.--- it will reduce the number of free electron in the n-channel available for conduction.

• The more negative bias, the higher the rate of recombination

• ID decrease, negative bias for VGS increase


Basic OperationA Depletion MOSFET can operate in two modes: Depletion or Enhancement mode.

Depletion-type MOSFET in Depletion Mode

Depletion mode The characteristics are similar to the JFET.When VGS = 0V, ID = IDSS

When VGS < 0V, ID < IDSS

The formula used to plot the Transfer Curve still applies:

2

P

GSDSSD )

V

V(1II

Depletion-type MOSFET in Enhancement Mode

Enhancement modeVGS > 0V, ID increases above IDSS

The formula used to plot the Transfer Curve still applies:

(note that VGS is now a positive polarity)

2

P

GSDSSD )

V

V(1II

p-Channel Depletion-Type MOSFET

The p-channel Depletion-type MOSFET is similar to the n-channel except that the voltage polarities and current directions are reversed.

Symbols

Enhancement-Type MOSFET Construction

The Drain (D) and Source (S) connect to the to n-doped regions. These n-doped regions are connected via an n-channel. The Gate (G) connects to the p-doped substrate via a thin insulating layer of SiO2. There is no channel. The n-doped material lies on a p-doped substrate that may have an additional terminal connection called SS.

• VGS=0, VDS some value, the absence of an n-channel will result in a current of effectively 0A

• VDS some positive voltage, VGS=0V, and terminal SS is directly connected to the source, there are in fact 2 reversed-biased p-n junction between the n-doped regions and p substrate to oppose any significant flow between drain and source.

• VDS and VGS have been set at some positive voltage greater than 0V, establishing the D and G at a positive potential with respect to the source

• The positive potential at the gate will pressure the holes in the p substrate along the edge of the SiO2 layer to leave the area and enter deeper regions of the p-substrate

• The result is a depletion region near the SiO2 insulating layer void of holes


• The electrons will in the p substrate will be attracted to the +G and accumulate in the

region near the surface of the SiO2 layer

• The SiO2 layer and its insulating qualities will

prevent the negative carriers from being absorbed at the gate terminal

• VGS increase, the concentration of electrons near the SiO2 surface increase until eventually the induced n-type region can support a measurable flow between D and S

• The level of VGS that results in the significant increase in drain current is called the threshold voltage, VT.

• VGS increase beyond the VT level the density of the carriers in the induced channel will increase and ID also increase


• If VGS constant and increase

the level of VDS, ID will

eventually reach a saturation level as occurred for the JFET

• Applying Kirchoff’s voltage law to the terminal voltage of the MOSFETVDG = VDS- VGS

• If VGS fixed at some value, 8V, VDS increased from 2 – 5V, the VDG will drop from -6V to -3V and the gate will become less and less positive with respect to the drain


VGS is always positiveAs VGS increases, ID increases

But if VGS is kept constant and VDS is

increased, then ID saturates (IDSS)The saturation level, VDSsat is reached.

TGSDsat VVV

The Enhancement-type MOSFET only operates in the enhancement mode.


To determine ID given VGS:

where VT = threshold voltage or voltage at which the MOSFET turns on.k = constant found in the specification sheet. k can also be determined by using values at a specific point and the formula: VDSsat can also be calculated:

2)( TGSD VVkI

2TGS(ON)

D(on)

)V(V

Ik

TGSDsat VVV


p-Channel Enhancement-Type MOSFETs

The p-channel Enhancement-type MOSFET is similar to the n-channel except that the voltage polarities and current directions are reversed.

Symbols

Specification Sheet

MOSFET Handling

• MOSFETs are very static sensitive. Because of the very thin SiO2 layer between the external terminals and the layers of the device, any small electrical discharge can stablish an unwanted conduction.

Protection:• Always transport in a static sensitive bag• Always wear a static strap when handling MOSFETS• Apply voltage limiting devices between the Gate and

Source, such as back-to-back Zeners to limit any transient voltage.

VMOS

VMOS – Vertical MOSFET increases the surface area of the device.

Advantage:• This allows the device to handle higher currents by

providing it more surface area to dissipate the heat.• VMOSs also have faster switching times.

CMOSCMOS – Complementary MOSFET p-channel and n-channel MOSFET on

the same substrate.Advantage:Useful in logic circuit designsHigher input impedanceFaster switching speedsLower operating power levels

Summary Table

Field Effect Transistors. Introduction Two main types of FET: - JFET –Junction field effects...

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