Field effect transistors and RC filters from pencil- trace ... · Field effect transistors and RC...
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Field effect transistors and RC filters from pencil- trace on paper Narendra Kurra, Dipanwita Dutta and Giridhar U. Kulkarni* Chemistry & Physics of Materials Unit and DST Unit on Nanoscience Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur P.O., Bangalore 560 064, India CORRESPONDING AUTHOR FOOTNOTE *Author correspondence: [email protected] Fax: +91 (80) 22082766 Phone: +91 (80) 22082814 Electronic Supplementary Material (ESI) for Physical Chemistry Chemical Physics This journal is © The Owner Societies 2013
Transcript of Field effect transistors and RC filters from pencil- trace ... · Field effect transistors and RC...
Field effect transistors and RC filters from pencil-
trace on paper
Narendra Kurra, Dipanwita Dutta and Giridhar U. Kulkarni*
Chemistry & Physics of Materials Unit and DST Unit on Nanoscience
Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur P.O., Bangalore 560 064,
India
CORRESPONDING AUTHOR FOOTNOTE
*Author correspondence: [email protected]
Fax: +91 (80) 22082766
Phone: +91 (80) 22082814
Electronic Supplementary Material (ESI) for Physical Chemistry Chemical PhysicsThis journal is © The Owner Societies 2013
Electronic Supplementary Information (ESI)
(a)
2 μm
2 μm
Graphitic domains
12 µm
-26 µm
(a)
30 μm
8 µm
-18.4 µm
30 μm
(b)
(c)
Pencil rod
1 mm
Fig. S1 (a) SEM image showing the surface morphology of the pencil rod (inset shows the
optical micrograph of the pencil rod). (b) Optical profilometric image showing the cellulose
fibres of the plane paper surface (c) AFM topography and (d) optical profiolometric images of
the pencil trace on the paper.
Surface profiling of the paper and pencil-trace was performed using Wyko NT1100 optical
profiler (Veeco, USA). AFM imaging was done on a diInnova SPM (Veeco, USA) using Si
probes (model, RTESPA, spring constant 40 N/m) in tapping mode.
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Fig. S2 Energy dispersive x-ray spectrum (EDAX) of the pencil trace on paper, showing the
presence of inter mixed metal oxide particles in the form of (Si, Al, Mg, Ca, Fe, O) clay in the
graphite matrix.
ρ(m
Ω.m
)
Fig. S3 Resistivity of the pencil-trace varying as ρ ∼ exp((-T0/T)) above 100 K, where To is
constant, T is the temperature.
0 1 2 3 4 5 6 7 8
0
500
1000
1500
2000
2500
FeK
CaK
SiK
AlK
MgK
OK
Co
un
ts (
a.
u.)
X-ray energy(keV)
CK
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-1.0 -0.5 0.0 0.5 1.0
-150
-100
-50
0
50
100
150
I(A
)
V(V)
298K
223K
173K
123K
77K
Fig. S4 I-V of the pencil-trace at different temperatures.
Fig. S5 Specific capacitance-voltage characteristics of the ion gel at frequency of 1 Hz.
-3 -2 -1 0 1 2 30.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
Cap
acit
an
ce (F
/cm
2)
Voltage(V)
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500 Hz
VinR
C
Vout
Fig. S6 RC differentiator circuit and the voltage response at 500 Hz. Sky blue curve is the input
signal and yellow curve is for the output signal.
Fig. S7 Transfer curve of the pencil-trace with the paper as gate dielectric, no field effect was
observed.
-20 -10 0 10 20
172.76
172.83
172.90
172.97
173.04
173.11
173.18
173.25
I DS
(A
)
VG(V)
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-2 -1 0 1 2
82
84
86
88
90
VG(V)
I DS
(A
)
0.0
0.5
1.0
1.5
2.0
I G(
A)
-2 -1 0 1 260
65
70
75
80
85
VG(V)
I DS
(A
)
0.0
0.5
1.0
1.5
2.0
IG(
A)
(a) (b)VDS=1V VDS=1V
Fig. S8 (a) and (b) Transfer curves of the pencil traces on the paper with ion gel as top gate
dielectric. (hole and electron mobilities are found to be μh ~ 81, 112 and μe ~ 63, 69 cm2/Vs for
(a) and (b) respectively).
(ΔR
/R) c
ha
nn
el
(ΔR
/R) g
ate
Bending angle (º)
(a)
(b)
Flat 45º 90º
0 20 40 60 80 100
0.0
0.4
0.8
1.2
1.6
2.0
0.0
0.1
0.2
0.3
0.4
0.5
Fig. S9 (a) Normalised resistance changes in the channel and the gate with respect to bending.
The associated error bars are included. (b) Photographs showing the extent of bending.
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The changes in the resistance of the channel and gate are normalised and plotted with respect to
the bending angle in Fig. S9(a). It is observed that the resistance of the pencil mark changes
significantly up to 160% at a maximum bending angle of 90º (see Fig. S9(b)). The gate
resistance, however, changes only up to 15% at a bending angle of 90º. Clearly, the ion gel
dielectric is stable against substrate bending. Thus, the flexible ion gel based dielectrics can be
explored as components for fabricating flexible electronic devices.
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