Fermilab Silicon Strip Readout Chip for BTEV

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Fermilab Silicon Strip Readout Chip for BTEV Raymond Yarema, Jim Hoff, Abderrezak Mekkaoui Fermi National Accelerator Laboratory Massimo Manghisoni, Valerio Re Universita di Bergamo and INFN, Pavia, Italy Valentina Angeleri, Pier Francesco Manfredi, Lodovico Ratti, Valeria Speziali Universita di Pavia and INFN, Pavia, Italy

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Fermilab Silicon Strip Readout Chip for BTEV. Raymond Yarema, Jim Hoff, Abderrezak Mekkaoui Fermi National Accelerator Laboratory Massimo Manghisoni, Valerio Re Universita di Bergamo and INFN, Pavia, Italy Valentina Angeleri, Pier Francesco Manfredi, Lodovico Ratti, Valeria Speziali - PowerPoint PPT Presentation

Transcript of Fermilab Silicon Strip Readout Chip for BTEV

Page 1: Fermilab Silicon Strip Readout Chip for BTEV

Fermilab Silicon Strip Readout Chip for BTEV

Raymond Yarema, Jim Hoff, Abderrezak Mekkaoui

Fermi National Accelerator Laboratory

Massimo Manghisoni, Valerio Re

Universita di Bergamo and INFN, Pavia, Italy

Valentina Angeleri, Pier Francesco Manfredi, Lodovico Ratti, Valeria Speziali

Universita di Pavia and INFN, Pavia, Italy

Page 2: Fermilab Silicon Strip Readout Chip for BTEV

October 19, 2004 2004 Nuclear Science Symposium 2

The Experiment

• BTEV - new experiment– Due to run in 2009– Designed pixel readout– Designed SSD readout (w/INFN)

• Silicon Strip Detector– 21 planes– Each plane is 30.6 x 31.6 cm– Total of 129,000 strips– FSSR (Fermilab Silicon Strip

Readout) chip wire bonded to SSD

• Full custom • Mixed signal device• TSMC 0.25 µ CMOS

Page 3: Fermilab Silicon Strip Readout Chip for BTEV

October 19, 2004 2004 Nuclear Science Symposium 3

Major Requirements

• Data driven architecture – no trigger• Can operate at 132, 264, or 396 nsec beam crossing• Over 10 years FSSR can see 5 Megarads

– Designed for TID and SEU

• Equivalent Noise Charge (ENC) < 1000erms @ Cdet = 20 pF

• Threshold dispersion < 500 erms• Power < 4 mW/channel

Page 4: Fermilab Silicon Strip Readout Chip for BTEV

October 19, 2004 2004 Nuclear Science Symposium 4

FSSR Block diagram• FSSR Core

– 128 analog channels– 16 sets of logic, each

handling 8 channels– Core logic with BCO counter

• Programming Interface (slow control)– Programmable registers– DACs

• Data Output Interface– Communicates with core

logic– Formats data output– Same as BTEV FPIX chip

• Allows common DAQ

128 cha nne ls of a na log c ircuits

16 se ts of logic e a chha ndling 8 a na log cha nne ls

Core Logic

To s ilicon s trip de te c tors

P rogra mming Inte rfa ce

DACs P rogra mma bleRe gis te rs

S te e ring LogicWord S e ria lize r

ClockControlLogic

Ne xtBlockWord

Co

reD

ata

Ou

tpu

tIn

terf

ace

BCO clock I/O Re a doutclock

High S pe e dO utput

BCO ctr

1 16

Page 5: Fermilab Silicon Strip Readout Chip for BTEV

October 19, 2004 2004 Nuclear Science Symposium 5

Chip Layout• Chip has128 channels with all digital

blocks– 50 micron pitch– Double row of bond pads

• Chip features for testing– One block of 64 channels has 32 with

Baseline Restorer and 32 without – Different input transistor sizes were

used on a few of the channels– A few of the analog front ends were

removed to add multiple test points for adjacent channels

– Individual transistors were added to characterize and compare their performance to operation in the preamplifier.

• Size is 7.27 mm x 4.46 mm

Page 6: Fermilab Silicon Strip Readout Chip for BTEV

October 19, 2004 2004 Nuclear Science Symposium 6

Analog Channels• Preamplifier

– Positive charge input– Gain of 5 mV/fC

• Integrator and shaper– CR-(RC)2

– Four programmable shaping times (65, 85, 105, 125 nsec)

• Base Line Restorer– Stabilizes base line– Blocks DC offset– Affects noise, threshold dispersion,

gain (more info later)• Discriminator

– Comparator– Programmable threshold (chip wide)

• 1 bit of 128 bit Serial shift register– Controls switch to provide

Test Input– Controls switch to Kill

discriminator output

Cdet

Bias

Cf

Gm

Preamplifier

CR-(RC)2 BLR

Programmableshaping

Discriminator

Convertto

Diff.

Vthreshold

Kill

Test Input

Cinj

Integrator&Shaper

Page 7: Fermilab Silicon Strip Readout Chip for BTEV

October 19, 2004 2004 Nuclear Science Symposium 7

Digital Section• Programming Interface

– Receives 13 bit of serial data• 5 bits for chip ID• 5 bits for programmable

address– CapSel – set shaping time– Kill – disconnect

discriminator– Inject – control test pulse– AqBCO – store BCO value– Alines – select # of output

serial lines– SendData – enable core– RejectHits – reject new

hits– Three types of resets

• 3 bits for instructions

– Write – download 2, 8, or 128 bits to register

– Read – output bits in register

– Set – set all register bits = 1

– Reset – set all register bits =0

– Default – set register bits to default value

• Chip ID set by wire bonds

Programming Interface

DACs ProgrammableRegisters

BCO clock I/O

Page 8: Fermilab Silicon Strip Readout Chip for BTEV

October 19, 2004 2004 Nuclear Science Symposium 8

Digital Section (cont.)• Data Output Interface

– Serial data output

– Number of output lines is programmable (1, 2, 4, 6)

– LVDS output

– No output buffering

– Interfaces to Core Logic

– Formats the data

– Max data rate = 840 Mb/sec (6 lines)

– Readout clock (70 MHz) independent of BCO clock

– Data output is not time ordered

• Two types of 24 bit readout words– Sync/Status

• 10 bits status• 13 bits for synchronization• 1 bit for word mark

– Data word• 4 bits for strip number (1 of

8)• 5 bits for logic set number• 8 bits for hit BCO number• 6 bits are currently unused• 1 bit for word mark

Steering LogicWord Serializer

ClockControlLogic

NextBlockWord

Readoutclock

High SpeedOutput

Page 9: Fermilab Silicon Strip Readout Chip for BTEV

October 19, 2004 2004 Nuclear Science Symposium 9

Test Results• The analog and digital sections along with all test

structures functioned properly allowing extensive testing of the chip.

• Noise performance is close to predicted values.• Overall gain is about 80 mV/fC.• Wide dynamic range of about 12 fC• Power dissipation is 3 mW/channel• The chip has been operated operated with a 70 MHz

readout clock to provide 840 Mb output data rate. • Threshold dispersion = 440 erms (with BLR)• ENC (Cdet = 20 pF, shaping time = 125 nsec, with BLR) is

790 erms.• All specifications met.

Page 10: Fermilab Silicon Strip Readout Chip for BTEV

October 19, 2004 2004 Nuclear Science Symposium 10

Averaged Waveforms at Shaper Output Showing Different Shaping Time Settings

• Shaping time can be programmed (65, 85, 105, 125 nsec)

• Adjustment allows for

– Foundry process variations

– Different beam interaction times.

• Has small tail lasting for several microseconds that might cause a problem.

-1000

-800

-600

-400

-200

0

200

0 100 200 300 400 500 600 700 800

Channel # 65Q

inj=10 fC

Sh

ap

er O

utp

ut

[mV

]

Time [ns]

65 ns

125 ns

85 ns

Page 11: Fermilab Silicon Strip Readout Chip for BTEV

October 19, 2004 2004 Nuclear Science Symposium 11

Equivalent Noise Charge Measurement at Shaper Output

• Close to simulated value

• Noise depends on shaping time

0

500

1000

1500

2000

0 10 20 30 40

NMOS, W/L = 1500/0.45EN

C

[e r

ms]

CD [pF]

tP = 85 ns

ENC = 220 e + 26.5 e/pF

Page 12: Fermilab Silicon Strip Readout Chip for BTEV

October 19, 2004 2004 Nuclear Science Symposium 12

Base Line Restorer Test Results• Shaper output has small overshoot.• Overshoot causes unwanted variable offset at discriminator input.• BLR removes variable offset.• BLR also improves threshold dispersion (AC coupling), but increases noise.

• BLR is needed to remove variable offset and improve threshold dispersion

0

20

40

60

80

100

0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4

Channel 2, tp=85 ns

without baseline shift1% occupancy2% occupancy

Co

mp

ara

tor

firi

ng

eff

icie

nc

y (%

)

Injected charge [fC]

0

20

40

60

80

100

0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4

Channel 1, tp=85 ns

without baseline shift1% occupancy2% occupancy

Co

mp

ara

tor

firi

ng

eff

icie

nc

y (%

)

Injected charge [fC]

Input signal discriminator scan without BLR

Input signal discriminator scan with BLR

Page 13: Fermilab Silicon Strip Readout Chip for BTEV

October 19, 2004 2004 Nuclear Science Symposium 13

Future Changes

• Since the current chip has unnecessarily wide dynamic range, the gain will be increased by decreasing the size of the preamplifier feedback capacitor from 200 fF to 150/100 fF. This will cause a further reduction in threshold dispersion.

• It was recently decided that a simple discriminator output will not satisfy the need to calibrate the detector as radiation changes its characteristics.– A 3 bit ADC, similar to the one used in the BTEV FPIX chip, will

be added to each channel– considered low risk.– The 3 bits will be inserted into the data word to replace 3 of the 6

unused bits. Thus there is no impact on the data rate.

Page 14: Fermilab Silicon Strip Readout Chip for BTEV

October 19, 2004 2004 Nuclear Science Symposium 14

Conclusion

• A full size prototype of the silicon strip readout chip for BTEV has been designed and tested.

• The device was found to be fully functional.• With the presence of the BLR all initial

requirements were met.• The final design will include a gain change and

addition of a three bit ADC.• Work is progressing toward a submission in

January 2005.

Page 15: Fermilab Silicon Strip Readout Chip for BTEV

October 19, 2004 2004 Nuclear Science Symposium 15

Back up Slides

Page 16: Fermilab Silicon Strip Readout Chip for BTEV

October 19, 2004 2004 Nuclear Science Symposium 16

Averaged Waveforms at the Shaper Output for Different Input Charges

• Output is well behaved

• Gain is about 80 mv/fC

• Gain becomes non-linear above 12 fC.

-1000

-800

-600

-400

-200

0

200

0 100 200 300 400 500 600

Channel # 65Q

inj start=2 fC, Q

inj stop=10 fC, step 2 fC

Nominal peaking time 85 ns

Sh

aper

Ou

tpu

t [m

V]

Time [ns]

Page 17: Fermilab Silicon Strip Readout Chip for BTEV

October 19, 2004 2004 Nuclear Science Symposium 17

Output Data Formatb23 b22 b21 b20 b19 b18 b17 b16 b15 b14 b13 b12 b11 b10 b9 b8 b7 b6 b5 b4 b3 b2 b1 b0

b11 b10 b9 b8 b7 b6 b5 b4 b3 b2 b1 b0

b23 b22 b21 b20 b19 b18 b17 b16 b15 b14 b13 b12

(a) One output pair

b5 b4 b3 b2 b1 b0

b11 b10 b9 b8 b7 b6

b17 b16 b15 b14 b13 b12

b23 b22 b21 b20 b19 b18

b3 b2 b1 b0

b7 b6 b5 b4

b11 b10 b9 b8

b15 b14 b13 b12

b19 b18 b17 b16

b23 b22 b21 b20

(b) Two output pairs

(c) Four output pairs

(d) Six output pairs

Page 18: Fermilab Silicon Strip Readout Chip for BTEV

October 19, 2004 2004 Nuclear Science Symposium 18

Base Line Restorer Circuit

Ref

2I

IFroms haper

To dis crimina tor

Page 19: Fermilab Silicon Strip Readout Chip for BTEV

October 19, 2004 2004 Nuclear Science Symposium 19

Detector Plane with FSSR Readout Chips

Page 20: Fermilab Silicon Strip Readout Chip for BTEV

October 19, 2004 2004 Nuclear Science Symposium 20

0

500

1000

1500

2000

0 5 10 15 20 25 30 35 40

without BLRwith BLR

y = 221.07 + 26.387x R= 0.9995

y = 216.22 + 33.228x R= 0.99863

EN

C [

e r

ms]

CD [pF]

tp =85 ns

ENC with and without a BLR

Page 21: Fermilab Silicon Strip Readout Chip for BTEV

October 19, 2004 2004 Nuclear Science Symposium 21

Typical threshold dispersion and equivalent noise charge with and without a Base Line Restorer circuit for a shaping time of 85 nsec.

  Threshold Dispersion

ENC

W/O BLR

790 erms 760 erms

W BLR 440 erms 890 erms

Specification

500 erms 1000 erms