FDP55N06/FDPF55N06 60V N-Channel MOSFET
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©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDP55N06/FDPF55N06 Rev. A FDP55N06/FDPF55N06 60V N-Channel MOSFET UniFET TM FDP55N06/FDPF55N06 60V N-Channel MOSFET Features • 55A, 60V, R DS(on) = 0.022 Ω @V GS = 10 V • Low gate charge ( typical 30 nC) • Low Crss ( typical 60 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. TO-220 FDP Series G S D TO-220F FDPF Series G S D D G S Absolute Maximum Ratings T C = 25°C unless otherwise noted * Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP55N06 FDPF55N06 Units V DSS Drain-Source Voltage 60 V I D Drain Current - Continuous (T C = 25°C) 55 55 * A - Continuous (T C = 100°C) 34.8 34.8 * A I DM Drain Current - Pulsed (Note 1) 220 220 * A V GSS Gate-Source Voltage ± 25 V E AS Single Pulsed Avalanche Energy (Note 2) 480 mJ I AR Avalanche Current (Note 1) 55 A E AR Repetitive Avalanche Energy (Note 1) 11.4 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P D Power Dissipation (T C = 25°C) 114 48 W - Derate above 25°C 0.9 0.4 W/°C T J , T STG Operating and Storage Temperature Range -55 to +150 °C T L Maximum lead temperature for soldering purposes, 1/8∀ from case for 5 seconds 300 °C Symbol Parameter FDP55N06 FDPF55N06 Units R θJC Thermal Resistance, Junction-to-Case 1.1 2.58 °C/W R θJS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W R θJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
Transcript of FDP55N06/FDPF55N06 60V N-Channel MOSFET
©20FD
FDP55N
06/FDPF55N
06 60V N-C
hannel MO
SFET
UniFET TM
FDP55N06/FDPF55N0660V N-Channel MOSFET
Features• 55A, 60V, RDS(on) = 0.022 Ω @VGS = 10 V• Low gate charge ( typical 30 nC)• Low Crss ( typical 60 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability
DescriptionThese N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
TO-220FDP SeriesG SD
TO-220FFDPF Series
G SD
D
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol Parameter FDP55N06 FDPF55N06 UnitsVDSS Drain-Source Voltage 60 VID Drain Current - Continuous (TC = 25°C) 55 55 * A
- Continuous (TC = 100°C) 34.8 34.8 * AIDM Drain Current - Pulsed (Note 1) 220 220 * AVGSS Gate-Source Voltage ± 25 VEAS Single Pulsed Avalanche Energy (Note 2) 480 mJIAR Avalanche Current (Note 1) 55 AEAR Repetitive Avalanche Energy (Note 1) 11.4 mJdv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/nsPD Power Dissipation (TC = 25°C) 114 48 W
- Derate above 25°C 0.9 0.4 W/°CTJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TLMaximum lead temperature for soldering purposes,1/8∀ from case for 5 seconds
300 °C
Symbol Parameter FDP55N06 FDPF55N06 UnitsRθJC Thermal Resistance, Junction-to-Case 1.1 2.58 °C/WRθJS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/WRθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
05 Fairchild Semiconductor Corporation 1 www.fairchildsemi.comP55N06/FDPF55N06 Rev. A
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Package Marking and Ordering InformationDevice Marking Device Package Reel Size Tape Width Quantity
FDP55N06 FDP55N06 TO-220 50
FDPF55N06 FDPF55N06 TO-220F 50
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max UnitsOff Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 60 -- -- V
∆BVDSS/ ∆TJ
Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.05 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V -- -- 1 µA
VDS = 48 V, TC = 150°C -- -- 10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V
RDS(on) Static Drain-Source On-Resistance
VGS = 10 V, ID = 27.5 A -- 0.018 0.022 Ω
gFS Forward Transconductance VDS = 25 V, ID = 27.5 A (Note 4) -- 33 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz
-- 1160 1510 pF
Coss Output Capacitance -- 375 490 pF
Crss Reverse Transfer Capacitance -- 60 90 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 30 V, ID = 55 A,RG = 25 Ω
(Note 4, 5)
-- 30 65 ns
tr Turn-On Rise Time -- 130 265 ns
td(off) Turn-Off Delay Time -- 70 150 ns
tf Turn-Off Fall Time -- 95 195 ns
Qg Total Gate Charge VDS = 48 V, ID = 55A,VGS = 10 V
(Note 4, 5)
-- 30 37 nC
Qgs Gate-Source Charge -- 6.5 -- nC
Qgd Gate-Drain Charge -- 7.5 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current -- -- 55 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 220 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 55 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, IS = 55 A,dIF / dt = 100 A/µs (Note 4)
-- 40 -- ns
Qrr Reverse Recovery Charge -- 55 -- µC
Notes:1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 5.6mH, IAS = 55A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 55A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
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Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
10-1 100 101100
101
102
VGS
Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 VBottom : 4.5 V
* Notes : 1. 250µs Pulse Test 2. TC = 25oC
I D, D
rain
Cur
rent
[A]
VDS, Drain-Source Voltage [V]2 4 6 8 10
100
101
102
150oC
25oC-55oC
* Notes : 1. VDS = 30V 2. 250µs Pulse Test
I D, D
rain
Cur
rent
[A]
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
0 25 50 75 100 125 150 175 200
0.02
0.03
0.04
0.05
VGS = 20V
VGS = 10V
* Note : TJ = 25oC
RD
S(O
N) [
O],
Dra
in-S
ourc
e O
n-R
esis
tanc
e
ID, Drain Current [A]0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
100
101
102
150oC
* Notes : 1. VGS = 0V 2. 250µs Pulse Test
25oC
I D
R, R
ever
se D
rain
Cur
rent
[A]
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
10-1 100 1010
500
1000
1500
2000
2500Ciss = Cgs + Cgd (Cds = shorted)Coss = Cds + Cgd
Crss = Cgd
* Note : 1. VGS = 0 V 2. f = 1 MHzCrss
Coss
Ciss
Cap
acita
nces
[pF]
VDS, Drain-Source Voltage [V]
0 5 10 15 20 25 300
2
4
6
8
10
12
VDS = 30V
VDS = 48V
* Note : ID = 55A
VG
S, G
ate-
Sou
rce
Vol
tage
[V]
QG, Total Gate Charge [nC]
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature
-100 -50 0 50 100 150 2000.8
0.9
1.0
1.1
1.2
* Notes : 1. VGS = 0 V 2. ID = 250 µA
BV
DSS
, (N
orm
aliz
ed)
Dra
in-S
ourc
e B
reak
dow
n V
olta
ge
TJ, Junction Temperature [oC]-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
* Notes : 1. VGS = 10 V 2. ID = 27.5 A
RD
S(O
N),
(Nor
mal
ized
)D
rain
-Sou
rce
On-
Res
ista
nce
TJ, Junction Temperature [oC]
Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Areafor FDP55N06 for FDPF55N06
100 101 10210-2
10-1
100
101
102
103
1 ms
10 µs
DC10 ms
100 µs
Operation in This Area is Limited by R DS(on)
* Notes : 1. TC = 25 oC
2. TJ = 150 oC 3. Single Pulse
I D, D
rain
Cur
rent
[A]
VDS, Drain-Source Voltage [V]100 101 102
10-2
10-1
100
101
102
103
100 ms
1 ms
10 µs
DC
10 ms
100 µs
Operation in This Area is Limited by R DS(on)
* Notes : 1. TC = 25 oC
2. TJ = 150 oC 3. Single Pulse
I D, D
rain
Cur
rent
[A]
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current vs. Case Temperature
25 50 75 100 125 1500
10
20
30
40
50
60
I D, D
rain
Cur
rent
[A]
TC, Case Temperature [oC]
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Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FDP55N06
Figure 11-2. Transient Thermal Response Curve for FDPF55N06
10-5 10-4 10-3 10-2 10-1 100 101
10-2
10-1
100
* Notes : 1. Z? JC(t) = 1.1 oC/W Max. 2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Z? JC(t)single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Z ?JC
(t), T
herm
al R
espo
nse
t1, Square W ave Pulse Duration [sec]
10-5 10-4 10-3 10-2 10-1 100 101
10-2
10-1
100
* Notes : 1. Z? JC(t) = 2.58 oC /W Max. 2. Duty Factor, D=t1/t2
3. T JM - T C = P DM * Z? JC(t)single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Z ?JC
(t), T
herm
al R
espo
nse
t1, Square W ave Pulse Duration [sec]
5 www.fairchildsemi.comP55N06/FDPF55N06 Rev. A
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
6 www.fairchildsemi.comFDP55N06/FDPF55N06 Rev. A
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Peak Diode Recovery dv/dt Test Circuit & Waveforms
7 www.fairchildsemi.comFDP55N06/FDPF55N06 Rev. A
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4.50 ±0.209.90 ±0.20
1.52 ±0.10
0.80 ±0.102.40 ±0.20
10.00 ±0.20
1.27 ±0.10
ø3.60 ±0.10
(8.70)
2.80
±0.
1015
.90 ±0
.20
10.0
8 ±0
.30
18.9
5MA
X.
(1.7
0)
(3.7
0)(3
.00)
(1.4
6)
(1.0
0)
(45°)
9.20
±0.
2013
.08 ±0
.20
1.30
±0.
10
1.30+0.10–0.05
0.50+0.10–0.05
2.54TYP[2.54 ±0.20]
2.54TYP[2.54 ±0.20]
TO-220
8 www.fairchildsemi.comFDP55N06/FDPF55N06 Rev. A
FDP55N
06/FDPF55N
06 60V N-C
hannel MO
SFET
9 www.fairchildsemi.comFDP55N06/FDPF55N06 Rev. A
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Mechanical Dimensions
(7.00) (0.70)
MAX1.47
(30°)
#1
3.30
±0.
1015
.80 ±0
.20
15.8
7 ±0
.20
6.68
±0.
20
9.75
±0.
30
4.70
±0.
20
10.16 ±0.20
(1.00x45°)
2.54 ±0.20
0.80 ±0.10
9.40 ±0.20
2.76 ±0.200.35 ±0.10
ø3.18 ±0.10
2.54TYP[2.54 ±0.20]
2.54TYP[2.54 ±0.20]
0.50+0.10–0.05
TO-220F
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Definition of Terms
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Advance Information
Preliminary
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Obsolete
This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.
This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.
This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.
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