FDD1600N10ALZD Rev.C2.20131120 · 2019. 10. 13. · Title: FDD1600N10ALZD Rev.C2.20131120.fm...

November 2013

FDD

1600N10A

LZD —

BoostPak (N

-Channel Pow

erTrench® M

OSFET + D

iode)

©2013 Fairchild Semiconductor CorporationFDD1600N10ALZD Rev. C2

www.fairchildsemi.com1

FDD1600N10ALZD BoostPak (N-Channel PowerTrench® MOSFET + Diode)100 V, 6.8 A, 160 mΩ

Features• RDS(on) = 124 mΩ (Typ.) @ VGS = 10 V, ID = 3.4 A

• RDS(on) = 175 mΩ (Typ.) @ VGS = 5.0 V, ID = 2.1 A

• Low Gate Charge (Typ. 2.78 nC)

• Low Crss (Typ. 2.04 pF)

• Fast Switching

• 100% Avalanche Tested

• Improved dv/dt Capability

• RoHS Compliant

DescriptionThis N-Channel MOSFET is produced using Fairchild Semicon-ductor’s PowerTrench® process that has been tailored to mini-mize the on-state resistance while maintaining superiorswitching performance.

The NP diode is hyperfast rectifier with low forward voltage dropand excellent switching performance.

Applications• LED Monitor Backlight

• LED TV Backlight

• LED Lighting

• Consumer Appliances, DC-DC converter (Step up & Step down)

1 2

3

TO252-5L4 5

1. Gate2. Source3. Drain / Anode4. Cathode5. Cathode

3

4,5

1

2Maximum Ratings TC = 25oC unless otherwise noted.

Thermal Characteristics

Symbol Parameter FDD1600N10ALZD UnitVDSS Drain to Source Voltage 100 VVGSS Gate to Source Voltage ±20 V

ID Drain Current- Continuous (TC = 25oC) 6.8 A- Continuous (TC = 100oC) 4.3

IDM Drain Current - Pulsed (Note 1) 13.6 AEAS Single Pulsed Avalanche Energy (Note 2) 5.08 mJdv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns

PD Power Dissipation(TC = 25oC) 14.9 W- Derate Above 25oC 0.12 W/oC

IF Diode Continuous Forward Current (TC = 124oC) 4 AIFM Diode Maximum Forward Current 40 ATJ, TSTG Operating and Storage Temperature Range -55 to +150 oCTL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 oC

Symbol Parameter FDD1600N10ALZD UnitRθJC Thermal Resistance, Junction to Case for MOSFET, Max. 8.4

oC/WRθJC Thermal Resistance, Junction to Case for Diode, Max. 3.3RθJA Thermal Resistance, Junction to Ambient, Max. 87

FDD

1600N10A

LZD —

BoostPak (N

-Channel Pow

erTrench® M

OSFET + D

iode)



Package Marking and Ordering Information

Electrical Characteristics of the MOSFET TC = 25oC unless otherwise noted.

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Part Number Top Mark Package Packing Method Reel Size Tape Width QuantityFDD1600N10ALZD 1600N10ALZD TO-252 5L Tape and Reel 13” 16 mm 2500 units

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 100 - - VΔBVDSS / ΔTJ

Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25

oC - 0.1 - V/oC

IDSS Zero Gate Voltage Drain CurrentVDS = 80 V, VGS = 0 V - - 1 μAVDS = 80 V, VGS = 0 V, TC = 125oC - - 500

IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V - - ±10 μA

VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 μA 1.4 2.1 2.8 V

RDS(on) Static Drain to Source On ResistanceVGS = 10 V, ID = 3.4 A - 124 160 mΩVGS = 5 V, ID = 2.1 A - 175 375

gFS Forward Transconductance VDS = 10 V, ID = 6.8 A - 19.6 - S

Ciss Input Capacitance VDS = 50 V, VGS = 0 V,f = 1 MHz

- 169 225 pFCoss Output Capacitance - 43 55 pFCrss Reverse Transfer Capacitance - 2.04 - pFCoss(er) Energy Related Output Capacitance VDS = 50 V, VGS = 0 V 85 - pFQg(tot) Total Gate Charge at 10V VGS = 10 V

VDD = 50 V, ID = 6.8 A

(Note 4)

- 2.78 3.61 nCQg(tot) Total Gate Charge at 5V VGS = 5 V 1.5 1.95 nCQgs Gate to Source Gate Charge - 0.72 - nCQgd Gate to Drain “Miller” Charge - 0.56 - nCVplateau Gate Plateau Volatge - 4.02 - VQsync Total Gate Charge Sync. VDS = 0 V, ID = 3.4 A - 2.5 - nCQoss Output Charge VDS = 50 V, VGS = 0 V - 5.2 - nC

td(on) Turn-On Delay TimeVDD = 50 V, ID = 6.8 A,VGS = 10 V, RG = 4.7 Ω (Note 4)

- 7 24 nstr Turn-On Rise Time - 2 14 nstd(off) Turn-Off Delay Time - 13 36 nstf Turn-Off Fall Time - 2 14 nsESR Equivalent Series Resistance (G-S) f = 1 MHz - 2.1 - Ω

IS Maximum Continuous Drain to Source Diode Forward Current - - 6.8 AISM Maximum Pulsed Drain to Source Diode Forward Current - - 13.6 AVSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 6.8 A - - 1.3 Vtrr Reverse Recovery Time VGS = 0 V, ISD = 6.8 A, VDS = 50 V,

dIF/dt = 100 A/μs - 37 - ns

Qrr Reverse Recovery Charge - 42 - nC

Notes:1. Repetitive rating: pulse-width limited by maximum junction temperature.2. L = 1 mH, IAS = 3.18 A, RG = 25 Ω, starting TJ = 25°C.3. ISD ≤ 6.8 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.4. Essentially independent of operating temperature typical characteristics.

FDD

1600N10A

LZD —

BoostPak (N

-Channel Pow

erTrench® M

OSFET + D

iode)



Electrical Characteristics of the Diode TC = 25oC unless otherwise noted.Symbol Parameter Test Conditions Min. Typ. Max. Unit

VR DC Blocking Voltage IR = 1 mA 150 - - V

VFM Maximum Instantaneous Forward Voltage IF = 4 ATC = 25oC - - 2.5 VTC = 125oC - 1.01 -

IRM Maximum Instantaneous Reverse Current @ rated VRTC = 25oC - - 50 uATC = 125oC - - 1000

trr Diode Reverse Recovery Time

IF = 4 A,dI/dt = 200 A/μs

TC = 25oC - 12.7 26 nsTC = 125oC - 17.1 -

Irr Diode Peak Reverse Recovery CurrentTC = 25oC - 2.6 6 ATC = 125oC - 3.8 -

Qrr Diode Reverse Recovery ChargeTC = 25oC - 18.3 - nCTC = 125oC - 35.7 -

WAVL Avalanche Energy (L = 40 mH) 10 - - mJ

FDD

1600N10A

LZD —

BoostPak (N

-Channel Pow

erTrench® M

OSFET + D

iode)



Typical Performance Characteristics - MOSFET

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

0.3 1 50.3

1

1014

*Notes: 1. 250μs Pulse Test 2. TC = 25

oC

I D, D

rain

Cur

rent

[A]

VDS, Drain-Source Voltage[V]

VGS = 15.0V 10.0V 8.0V 6.0V 5.0V 4.5V 4.0V 3.5V

1 2 3 4 5 60.1

1

1014

-55oC

150oC

*Notes: 1. VDS = 10V 2. 250μs Pulse Test

25oC

I D, D

rain

Cur

rent

[A]

VGS, Gate-Source Voltage[V]

0 5 10 15 200

100

200

300

400

*Note: TC = 25oC

VGS = 10V

VGS = 5V

RD

S(O

N) [

mΩ

],D

rain

-Sou

rce

On-

Res

ista

nce

ID, Drain Current [A]0.3 0.6 0.9 1.2 1.5

1

10

14

*Notes:1. VGS = 0V2. 250μs Pulse Test

150oC

I S, R

ever

se D

rain

Cur

rent

[A]

VSD, Body Diode Forward Voltage [V]

25oC

0.1 1 10 1001

10

100

300

Coss

Ciss

Ciss = Cgs + Cgd (Cds = shorted)Coss = Cds + CgdCrss = Cgd

*Note: 1. VGS = 0V 2. f = 1MHz

Crss

Cap

acita

nces

[pF]

VDS, Drain-Source Voltage [V]0 0.5 1.0 1.5 2.0 2.5 3.0

0

2

4

6

8

*Note: ID = 3.4A

VDS = 20VVDS = 50VVDS = 80V

V GS,

Gat

e-So

urce

Vol

tage

[V]

Qg, Total Gate Charge [nC]

FDD

1600N10A

LZD —

BoostPak (N

-Channel Pow

erTrench® M

OSFET + D

iode)



Typical Performance Characteristics - MOSFET (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature

Figure 11. Eoss vs. Drain to Source Voltage Figure 12. Unclamped Inductive Switching Capability

-80 -40 0 40 80 120 1600.4

0.8

1.2

1.6

2.0

2.4

*Notes: 1. VGS = 10V 2. ID = 3.4A

RD

S(on

), [N

orm

aliz

ed]

Dra

in-S

ourc

e O

n-R

esis

tanc

e

TJ, Junction Temperature [oC]

-80 -40 0 40 80 120 1600.90

0.95

1.00

1.05

1.10

*Notes: 1. VGS = 0V 2. ID = 250μA

BV D

SS, [

Nor

mal

ized

]D

rain

-Sou

rce

Bre

akdo

wn

Volta

ge

TJ, Junction Temperature [oC]

25 50 75 100 125 1500

2

4

6

8

VGS = 5V

RθJC = 8.4oC/W

VGS = 10V

I D, D

rain

Cur

rent

[A]

TC, Case Temperature [oC]

1 10 100 2000.01

0.1

1

10

30

SINGLE PULSETC = 25

oC

TJ = 150oC

RθJC = 8.4oC/W

100ms

100us

1ms

10ms

I D, D

rain

Cur

rent

[A]

VDS, Drain-Source Voltage [V]

Operation in This Area is Limited by R DS(on)

DC

0.001 0.01 0.1 11

2

3

4

5678

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVALANCHE (ms)

I AS,

AVA

LAN

CH

E C

UR

REN

T (A

)

0 20 40 60 80 1000

0.05

0.10

0.15

0.20

0.25

E OSS

[μJ]

VDS, Drain to Source Voltage [V]

FDD

1600N10A

LZD —

BoostPak (N

-Channel Pow

erTrench® M

OSFET + D

iode)



Typical Performance Characteristics - Diode (Continued)

Figure 13. Forward Voltage Drop Figure 14. Reverse Current vs. vs. Forward Current Reverse Voltage

Figure 15. Junction Capacitance Figure 16. Reverse Recovery Time vs. di/dt

Figure 17. Reverse Recovery Figure 18. Forward Current Derating Current vs. di/dt Curve

10 20 40 60 80 100 1200.0050.01

0.1

1

10

100

TC = 75oC

TC = 25oC

TC = 125oC

Rev

erse

Cur

rent

, I R

[nA

]

Reverse Voltage, VR [V]0.0 0.5 1.0 1.5 2.0 2.5

0.1

1

10

40

TC = 125oC

TC = 75oC

Forw

ard

Cur

rent

, IF [

A]

Forward Voltage, VF [V]

TC = 25oC

0.1 1 10 1000

25

50

75

100

125Typical Capacitanceat 0V = 121 pF

Cap

acita

nces

, C

j [pF

]

Reverse Voltage, VR [V]100 200 300 400 500

10

12

15

18

20IF = 4A

TC = 75oC

TC = 25oC

TC = 125oC

Rev

erse

Rec

over

y Ti

me,

t rr [

ns]

di/dt [A/μs]

25 50 75 100 125 1500

5

10

15

20

25

Ave

rage

For

war

d C

urre

nt, I

F(A

V) [A

]

Case temperature, TC [oC]

100 200 300 400 5000

2

4

6

8

10

IF = 4A

TC = 125oC

TC = 25oC

TC = 75oC

Rev

erse

Rec

over

y C

urre

nt, I

rr [A

]

di/dt [A/μs]

FDD

1600N10A

LZD —

BoostPak (N

-Channel Pow

erTrench® M

OSFET + D

iode)



Typical Performance Characteristics (Continued)

Figure 19. Transient Thermal Response Curve of MOSFET

Figure 20. Transient Thermal Response Curve of Diode

10-5 10-4 10-3 10-2 10-1 10.1

1

10

20

0.01

0.1

0.2

0.050.02 *Notes:

1. ZθJC(t) = 8.4oC/W Max.

2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t)

0.5

Single pulse

Ther

mal

Res

pons

e [Z

θJC]

Rectangular Pulse Duration [sec]

t1

PDM

t2

Z θ

JC(t)

, The

rmal

Res

pons

e [o

C/W

]

t1, Rectangular Pulse Duration [sec]

10-5 10-4 10-3 10-2 10-1 10.01

0.1

1

4

0.01

0.1

0.2

0.05

0.02

*Notes: 1. ZθJC(t) = 3.3

oC/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t)

0.5

Single pulse

Ther

mal

Res

pons

e [Z

θJC]

Rectangular Pulse Duration [sec]

t1

PDM

t2

Z θ

JC(t)

, The

rmal

Res

pons

e [o

C/W

]

t1, Rectangular Pulse Duration [sec]

FDD

1600N10A

LZD —

BoostPak (N

-Channel Pow

erTrench® M

OSFET + D

iode)



Figure 21. Gate Charge Test Circuit & Waveform

Figure 22. Resistive Switching Test Circuit & Waveforms

Figure 23. Unclamped Inductive Switching Test Circuit & Waveforms

VGS

VDS

10%

90%

td(on) tr

t on t off

td(off) tf

VDD

10V

VDSRL

DUT

RGVGS

VGS

VDS

10%

90%

td(on) tr

t on t off

td(off) tf

VDD

10V

VDSRL

DUT

RGVGS

VGS

VGS

IG = const.

FDD

1600N10A

LZD —

BoostPak (N

-Channel Pow

erTrench® M

OSFET + D

iode)



Figure 24. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

+

_

DriverRG

Same Type as DUT

VGS • dv/dt controlled by RG• ISD controlled by pulse period

VDD

LI SD

10VVGS

( Driver )

I SD( DUT )

VDS( DUT )

VDD

Body DiodeForward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse WidthGate Pulse Period

--------------------------

DUT

VDS

+

_

DriverRG

Same Type as DUT

VGS • dv/dt controlled by RG• ISD controlled by pulse period

VDD

LLI SD

10VVGS

( Driver )

I SD( DUT )

VDS( DUT )

VDD

Body DiodeForward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse WidthGate Pulse Period

--------------------------D =Gate Pulse WidthGate Pulse Period

--------------------------

FDD

1600N10A

LZD —

BoostPak (N

-Channel Pow

erTrench® M

OSFET + D

iode)



Figure 25. Total Gate Charge Qsync. Test Circuit & Waveforms

VGS(DUT)

VGS(Driver)

Driver

RG

VCC

DUTVR

VDD

( )1 GRG

Qsync V t dtR

= ⋅

G

10V

t

t

VGS

FDD

1600N10A

LZD —

BoostPak (N

-Channel Pow

erTrench® M

OSFET + D

iode)



Mechanical Dimensions

Figure 26. TO252 (D-PAK), Molded, 5-Lead, Option ADPackage drawings are provided as a service to customers considering Fairchild components. Drawings may change in any mannerwithout notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify orobtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-ically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-005

FDD

1600N10A

LZD —

BoostPak (N

-Channel Pow

erTrench® M

OSFET + D

iode)



TRADEMARKSThe following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is notintended to be an exhaustive list of all such trademarks.

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVERELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANYPRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTYTHEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THEEXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used here in:1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant into the body or (b) support or sustain life,and (c) whose failure to perform when properly used in accordance withinstructions for use provided in the labeling, can be reasonablyexpected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, orsystem whose failure to perform can be reasonably expected to causethe failure of the life support device or system, or to affect its safety oreffectiveness.

PRODUCT STATUS DEFINITIONSDefinition of Terms

AccuPower™AX-CAP®*BitSiC™Build it Now™CorePLUS™CorePOWER™CROSSVOLT™CTL™Current Transfer Logic™DEUXPEED®Dual Cool™EcoSPARK®EfficentMax™ESBC™

Fairchild®Fairchild Semiconductor®FACT Quiet Series™FACT®FAST®FastvCore™FETBench™FPS™

F-PFS™FRFET®Global Power ResourceSMGreenBridge™Green FPS™Green FPS™ e-Series™Gmax™GTO™IntelliMAX™ISOPLANAR™Marking Small Speakers Sound Louderand Better™MegaBuck™MICROCOUPLER™MicroFET™MicroPak™MicroPak2™MillerDrive™MotionMax™mWSaver®OptoHiT™OPTOLOGIC®OPTOPLANAR®

PowerTrench®PowerXS™Programmable Active Droop™QFET®QS™Quiet Series™RapidConfigure™

Saving our world, 1mW/W/kW at a time™SignalWise™SmartMax™SMART START™Solutions for Your Success™SPM®STEALTH™SuperFET®SuperSOT™-3SuperSOT™-6SuperSOT™-8SupreMOS®SyncFET™

Sync-Lock™®*

TinyBoost®TinyBuck®TinyCalc™TinyLogic®TINYOPTO™TinyPower™TinyPWM™TinyWire™TranSiC™TriFault Detect™TRUECURRENT®*μSerDes™

UHC®Ultra FRFET™UniFET™VCX™VisualMax™VoltagePlus™XS™

®

™

Datasheet Identification Product Status Definition

Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Preliminary First ProductionDatasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

ANTI-COUNTERFEITING POLICYFairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,www.Fairchildsemi.com, under Sales Support.Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of theirparts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failedapplication, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from theproliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized FairchildDistributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized FairchildDistributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range ofup-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address andwarranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild iscommitted to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

Rev. I66

tm

®

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FDD1600N10ALZD Rev.C2.20131120 · 2019. 10. 13. · Title: FDD1600N10ALZD Rev.C2.20131120.fm...

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