FCP11N60FCPF11N60-SuperFET

7/28/2019 FCP11N60FCPF11N60-SuperFET

1/10

SuperFET

2004 Fairchild Semiconductor Corporation Rev. B, March 2004

F C P 1 1 N 6 0 / F C P F 1 1 N 6 0

TM

FCP11N60/FCPF11N60General DescriptionSuperFET TM is a new generation of high voltage MOSFETsfrom Fairchild with outstanding low on-resistance and lowgate charge performance, a result of proprietary technologyutilizing advanced charge balance mechanisms.This advanced technology has been tailored to minimizeconduction loss, provide superior switching performance,and withstand extreme dv/dt rate and higher avalancheenergy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching modeoperation for system miniaturization and higher efficiency.

Features 650V @T j = 150 C Typ. Rds(on)=0.32 Ultra low gate charge (typ. Qg=40nC) Low effective output capacitance (typ. Coss.eff=95pF) 100% avalanche tested

Absolute Maximum Ratings TC = 25C unless otherwise noted

* Drain current limited by maximum junction termperature

Thermal Characteristics

Symbol Parameter FCP11N60 FCPF11N60 UnitsID Drain Current - Continuous (T C = 25C) 11 11* A

- Continuous (T C = 100C) 7 7* A

IDM Drain Current - Pulsed (Note 1) 33 33* AVGSS Gate-Source Voltage 30 VE AS Single Pulsed Avalanche Energy (Note 2) 340 mJI AR Avalanche Current (Note 1) 11 AE AR Repetitive Avalanche Energy (Note 1) 12.5 mJdv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/nsP D Power Dissipation (T C = 25C) 125 36 W

- Derate above 25C 1.0 0.29 W/CTJ , T STG Operating and Storage Temperature Range -55 to +150 C

TLMaximum lead temperature for soldering purposes,1/8 " from case for 5 seconds

300 C

Symbol Parameter FCP11N60 FCPF11N60 UnitsR JC Thermal Resistance, Junction-to-Case 1.0 3.5 C /WR CS Thermal Resistance, Case-to-Sink 0.5 -- C /WR JA Thermal Resistance, Junction-to-Ambient 62.5 62.5 C /W

TO-220FCP SeriesG SD

TO-220FFCPF Series

G SD

!!! !

!!! !

!!! !

!!! !

!!! !

!!! !

S

D

G


2/10

Rev. B, March 2004

F C P 1 1 N 6 0 / F C P F 1 1 N 6 0

2004 Fairchild Semiconductor Corporation

Electrical Characteristics TC = 25C unless otherwise noted

Notes:1. Repetitive Rating : Pulse width limited by maximum junction temperature2. I AS = 5.5A, V DD = 50V, R G = 25 , Starting T J = 25C3. ISD 11A, di/dt 200A/ s, V DD BVDSS, Starting T J = 25C4. Pulse Test : Pulse width 300 s, Duty cycle 2%5. Essentially independent of operating temperature

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BVDSS Drain-Source Breakdown VoltageVGS = 0 V, I D = 250 A, T J = 25C 600 -- -- VV

GS= 0 V, I

D= 250 A, T

J= 150C -- 650 -- V

BVDSS/ TJ

Breakdown Voltage Temperature Coef-ficient

ID = 250 A, Referenced to 25C -- 0.6 -- V/C

BVDSDrain-Source Avalanche BreakdownVoltage

VGS = 0 V, I D = 11 A -- 700 -- V

IDSSZero Gate Voltage Drain Current

VDS = 600 V, V GS = 0 V -- -- 1 AVDS = 480 V, T C = 125C -- -- 10 A

IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, V DS = 0 V -- -- 100 nAIGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, V DS = 0 V -- -- -100 nA

On CharacteristicsVGS(th) Gate Threshold Voltage VDS = VGS , ID = 250 A 3.0 -- 5.0 VRDS(on) Static Drain-Source

On-ResistanceVGS = 10 V, I D = 5.5 A -- 0.32 0.38

gFS Forward Transconductance VDS = 40 V, I D = 5.5 A (Note 4) -- 9.7 -- S

Dynamic CharacteristicsC iss Input Capacitance VDS = 25 V, V GS = 0 V,

f = 1.0 MHz

-- 1148 1490 pFCoss Output Capacitance -- 671 870 pFC rss Reverse Transfer Capacitance -- 63 82 pF

Coss Output CapacitanceVDS = 480 V, V GS = 0 V,f = 1.0 MHz

-- 35 -- pF

Coss eff. Effective Output Capacitance VDS = 0V to 480 V, V GS = 0 V -- 95 -- pF

Switching Characteristicstd(on) Turn-On Delay Time VDD = 300 V, I D = 11 A,

RG = 25

(Note 4, 5)

-- 34 80 ns

tr Turn-On Rise Time -- 98 205 nstd(off) Turn-Off Delay Time -- 119 250 nstf Turn-Off Fall Time -- 56 120 nsQ g Total Gate Charge VDS = 480 V, I D = 11 A,

VGS = 10 V (Note 4, 5)

-- 40 52 nCQ gs Gate-Source Charge -- 7.2 -- nCQ gd Gate-Drain Charge -- 21 -- nC

Drain-Source Diode Characteristics and Maximum RatingsIS Maximum Continuous Drain-Source Diode Forward Current -- -- 11 AISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 33 AVSD Drain-Source Diode Forward Voltage VGS = 0 V, I S = 11 A -- -- 1.4 Vtrr Reverse Recovery Time VGS = 0 V, I S = 11 A,

dIF

/ dt = 100 A/ s (Note 4)-- 390 -- ns

Qrr

Reverse Recovery Charge -- 5.7 -- C


3/10


F C P 1 1 N 6 0 / F C P F 1 1 N 6 0

Typical Characteristics

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

10-1 100 101

10-1

100

101

102V

GS

Top : 15.0 V10.0 V

8.0 V7.0 V6.5 V6.0 V

Bottom : 5.5 V

* Notes :1. 250 s Pulse Test2. TC = 25

oC

I D , D

r a i n C u r r e n

t [ A ]

VDS, Drain-Source Voltage [V]2 4 6 8 10

10-1

100

101

* Note1. VDS = 40V2. 250 s Pulse Test

-55oC

150oC

25oC

I D , D

r a i n C u r r e n

t [ A ]

VGS

, Gate-Source Voltage [V]

0 5 10 15 20 25 30 35 400.0

0.2

0.4

0.6

0.8

1.0

VGS = 20V

VGS

= 10V

* Note : TJ

= 25oC

R

D S ( O N )

[ ] ,

D r a

i n - S o u r c e

O n - R e s

i s t a n c e

ID, Drain Current [A]

10 -1 100 10 10

1000

2000

3000

4000

5000

6000C

iss= C

gs+ C

gd(C

ds= shorted)

Coss

= Cds

+ Cgd

Crss = Cgd

* Notes :1. V

GS= 0 V

2. f = 1 MHz

Crss

Coss

Ciss

C a p a c

i t a n c e

[ p F ]

VDS

, Drain-Source Voltage [V]

0 5 10 15 20 25 30 35 40 450

2

4

6

8

10

12

VDS

= 250V

VDS

= 100V

VDS

= 400V

* Note : ID

= 11A

V G S , G

a t e -

S o u r c e

V o l

t a g e

[ V ]

QG, Total Gate Charge [nC]

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.610-1

100

101

25 oC150oC

* Notes :1. VGS = 0V2. 250 s Pulse Test

I D R ,

R e v e r s e

D r a

i n C u r r e n t

[ A ]

VSD

, Source-Drain Voltage [V]

Figure 3. On-Resistance Variation vs.Drain Current and Gate Voltage

Figure 4. Body Diode Forward VoltageVariation vs. Source Current

and Temperature


4/10


F C P 1 1 N 6 0 / F C P F 1 1 N 6 0

Typical Characteristics (Continued)

-100 -50 0 50 100 150 2000.8

0.9

1.0

1.1

1.2

* Notes :1. V

GS= 0 V

2. ID

= 250 A

B V

D S S , (

N o r m a l

i z e d

)

D r a

i n - S o u r c e

B r e a k

d o w n

V o l

t a g e

TJ, Junction Temperature [ oC]

-100 -50 0 50 100 150 2000.0

0.5

1.0

1.5

2.0

2.5

3.0

* Notes :1. V

GS= 10 V

2. ID

= 5.5 A

R D S ( O N ) , (

N o r m a l

i z e d

)

D r a

i n - S o u r c e

O n -

R e s

i s t a n c e

TJ, Junction Temperature [ oC]

25 50 75 100 125 1500.0

2.5

5.0

7.5

10.0

12.5

I D , D r

a i n

C u r r e n t

[ A ]

TC, Case Temperature [ oC]

Figure 7. Breakdown Voltage Variationvs. Temperature

Figure 8. On-Resistance Variationvs. Temperature

Figure 10. Maximum Drain Currentvs. Case Temperature

100 101 102 10310-2

10-1

100

101

102

100 us

DC

100 ms

10 ms

1 ms

Operation in This Areais Limited by R

DS(on)

* Notes :1. T

C= 25 oC

2. TJ

= 150 oC3. Single Pulse

I D , D

r a i n C u r r e n t

[ A ]

VDS


100 101 102 10310-2

10-1

100

101

102 Operation in This Areais Limited by R DS(on)

DC

10 ms

1 ms

100 us

* Notes :1. T

C= 25 oC

2. T J = 150oC

3. Single Pulse

I D , D

r a i n C u r r e n t

[ A ]

VDS


Figure 9-2. Maximum Safe Operating Areafor FCPF11N60

Figure 9-1. Maximum Safe Operating Areafor FCP11N60


5/10

Rev. B, March 2004

F C P 1 1 N 6 0 / F C P F 1 1 N 6 0


Typical Characteristics (Continued)

10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1

10 -2

10 -1

10 0

* N o t e s :1. Z

JC( t ) = 1 .0 o C / W M a x .

2 . Du ty Facto r, D=t1/t

2

3. TJM

- TC

= PDM

* Z JC

(t)

s ing le pu lse

D = 0 . 5

0 .02

0. 2

0 .05

0. 1

0 .01

Z

J C

( t ) , T h e r m a

l R e s p o

n s e

t1, S q u a r e W a v e P u l s e D u r a t i o n [ s e c ]

t1

P DM

t2

10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1

10 -2

10 -1

10 0

* N o t e s :1. Z

JC ( t ) = 3 .5oC / W M a x .

2 . Du ty Facto r, D=t1/t

2

3. T JM - T C = P DM * Z JC (t)

s ing le pu lse

D=0.5

0 .02

0. 2

0 .05

0. 1

0 .01

Z J C

( t ) , T h e r m a

l R e s p o n s e

t 1 , S q u a r e W a v e P u l s e D u r a t io n [ s e c ]

Figure 11-1. Transient Thermal Response Curve for FCP11N60

Figure 11-2. Transient Thermal Response Curve for FCPF11N60

t1

P DM

t2


6/10


F C P 1 1 N 6 0 / F C P F 1 1 N 6 0

Charge

VGS

10VQ g

Qgs Q gd

3mA

VGS

DUT

VDS

300nF

50K

200nF12V

Same Typeas DUT

Charge

VGS

10VQ g

Qgs Q gd

3mA

VGS

DUT

VDS

300nF

50K

200nF12V

Same Typeas DUT

VGS

VDS

10%

90%

td(on) tr

t on t off

td(off) tf

VDD

10V

VDSRL

DUT

RGVGS

VGS

VDS

10%

90%

td(on) tr

t on t off

td(off) tf

VDD

10V

VDSRL

DUT

RGVGS

E AS = L I AS 2----21 --------------------

BVDSS - VDD

BVDSS

VDD

VDS

BVDSS

t p

VDD

I AS

VDS (t)

ID (t)

Time

10V DUT

RG

L

I D

t p

E AS = L I AS 2----21E AS = L I AS 2----21----21 --------------------

BVDSS - VDD

BVDSS

VDD

VDS

BVDSS

t p

VDD

I AS

VDS (t)

ID (t)

Time

10V DUT

RG

LL

I DI D

t p

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms


7/10


F C P 1 1 N 6 0 / F C P F 1 1 N 6 0

Peak Diode Recovery dv/d t Test Circuit & Waveforms

DUT

VDS

+

_

Driver RG

Same Typeas DUT

VGS dv/dt controlled by R G ISD controlled by pulse period

VDD

LI SD

10VVGS

( Driver )

I SD( DUT )

VDS( DUT )

VDD

Body DiodeForward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse WidthGate Pulse Period

--------------------------

DUT

VDS

+

_

Driver RG

Same Typeas DUT

VGS dv/dt controlled by R G ISD controlled by pulse period

VDD

LLI SD

10VVGS

( Driver )

I SD( DUT )

VDS( DUT )

VDD

Body DiodeForward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse WidthGate Pulse Period

--------------------------D =Gate Pulse WidthGate Pulse Period

--------------------------


8/10

Rev. B, March 20042004 Fairchild Semiconductor Corporation

F C P 1 1 N 6 0 / F C P F 1 1 N 6 0

Package Dimensions

4.50 0.209.90 0.20

1.52 0.10

0.80 0.102.40 0.20

10.00 0.20

1.27 0.10

3.60 0.10

(8.70)

2 . 8

0 0

. 1 0

1 5

. 9 0 0

. 2 0

1 0

. 0 8

0

. 3 0

1 8

. 9 5 M A X

.

( 1 . 7

0 )

( 3 . 7

0 )

( 3 . 0

0 )

( 1 . 4

6 )

( 1 . 0

0 )

( 4 5

)

9 . 2

0 0

. 2 0

1 3

. 0 8 0

. 2 0

1 . 3

0 0

. 1 0

1.30 +0.10 0.05

0.50 +0.10 0.052.54TYP

[2.54 0.20 ]2.54TYP

[2.54 0.20 ]

TO-220

Dimensions in Millimeters


9/10

Rev. B, March 2004

F C P 1 1 N 6 0 / F C P F 1 1 N 6 0


Package Dimensions

(7.00) (0.70)

MAX1.47

( 3 0 )

#1

3 . 3

0

0 . 1

0

1 5

. 8 0

0

. 2 0

1 5

. 8 7

0

. 2 0

6 . 6

8

0 . 2

0

9 . 7

5

0 . 3

0

4 . 7

0

0 . 2

0

10.16 0.20

(1.00x45 )

2.54 0.20

0.80 0.10

9.40 0.20

2.76 0.200.35 0.10

3.18 0.10

2.54TYP[2.54 0.20 ]

2.54TYP[2.54 0.20 ]

0.50 +0.10 0.05

TO-220F

Dimensions in Millimeters


10/10

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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an exhaustive list of all such trademarks.

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices orsystems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can bereasonably expected to result in significant injury to theuser.

2. A critical component is any component of a lifesupport device or system whose failure to perform canbe reasonably expected to cause the failure of the lifesupport device or system, or to affect its safety oreffectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.

This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.

This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.

This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.

Formative orIn Design

First Production

Full Production

Not In Production

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FCP11N60FCPF11N60-SuperFET

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