FBK UFSD3.2 & HPK2 LGAD productionsFBK + HPK non-irradiated HPK irradiated Comparison of FBK sensors...
Transcript of FBK UFSD3.2 & HPK2 LGAD productionsFBK + HPK non-irradiated HPK irradiated Comparison of FBK sensors...
![Page 1: FBK UFSD3.2 & HPK2 LGAD productionsFBK + HPK non-irradiated HPK irradiated Comparison of FBK sensors with different active thicknesses: 35, 45, 55 μm Outline Siviero F. 37th RD50](https://reader036.fdocuments.in/reader036/viewer/2022062611/6129baf24ad63015767769f0/html5/thumbnails/1.jpg)
Siviero F., Arcidiacono R., Cartiglia N., Costa M., Ferrero M., Mandurrino M., Milanesio M., Sola V. Staiano A., Tornago M.Borghi G., Boscardin M., Dalla Betta G-F., Ficorella F., Pancheri L., Paternoster G., Centis Vignali M.
Characterization with a β-source setup of the FBK UFSD3.2 & HPK2 LGAD productions
37th RD50 Online Workshop, 11.20.2020
![Page 2: FBK UFSD3.2 & HPK2 LGAD productionsFBK + HPK non-irradiated HPK irradiated Comparison of FBK sensors with different active thicknesses: 35, 45, 55 μm Outline Siviero F. 37th RD50](https://reader036.fdocuments.in/reader036/viewer/2022062611/6129baf24ad63015767769f0/html5/thumbnails/2.jpg)
Outline
Siviero F. 37th RD50 Online Workshop , 20.11.2020 2
➢ The FBK UFSD3.2 & HPK2 productions
➢ Torino β-source setup
➢ Measurements of sensors for the CMS Encap Timing Layer:
○ FBK + HPK non-irradiated
○ HPK irradiated
➢ Comparison of FBK sensors with different active thicknesses: 35, 45, 55 μm
![Page 3: FBK UFSD3.2 & HPK2 LGAD productionsFBK + HPK non-irradiated HPK irradiated Comparison of FBK sensors with different active thicknesses: 35, 45, 55 μm Outline Siviero F. 37th RD50](https://reader036.fdocuments.in/reader036/viewer/2022062611/6129baf24ad63015767769f0/html5/thumbnails/3.jpg)
Outline
Siviero F. 37th RD50 Online Workshop , 20.11.2020 3
➢ The FBK UFSD3.2 & HPK2 productions
➢ Torino β-source setup
➢ Measurements of sensors for the CMS Encap Timing Layer:
○ FBK + HPK non-irradiated
○ HPK irradiated
➢ Comparison of FBK sensors with different active thicknesses: 35, 45, 55 μm
![Page 4: FBK UFSD3.2 & HPK2 LGAD productionsFBK + HPK non-irradiated HPK irradiated Comparison of FBK sensors with different active thicknesses: 35, 45, 55 μm Outline Siviero F. 37th RD50](https://reader036.fdocuments.in/reader036/viewer/2022062611/6129baf24ad63015767769f0/html5/thumbnails/4.jpg)
FBK UFSD3.2
Siviero F. 37th RD50 Online Workshop , 20.11.20204
● 5 wafers for ETL measured so far:○ 2 thicknesses○ 3 carbon doses○ Shallow and deep gain layer (GL)
Latest R&D production of LGADs for CMS ETLWafer thickness GL depth Carbon
4 45 μm shallow 0.4*A
7 55 μm shallow A
10 45 μm deep 0.6*A
12 45 μm deep A
14 45 μm deep A
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FBK UFSD3.2
Siviero F. 37th RD50 Online Workshop , 20.11.2020 5
● 5 wafers for ETL measured so far:○ 2 thicknesses○ 3 carbon doses○ Shallow and deep gain layer (GL)
Latest R&D production of LGADs for CMS ETLWafer thickness GL depth Carbon
4 45 μm shallow 0.4*A
7 55 μm shallow A
10 45 μm deep 0.6*A
12 45 μm deep A
14 45 μm deep A
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FBK UFSD3.2
Siviero F. 37th RD50 Online Workshop , 20.11.2020 6
● 5 wafers for ETL measured so far:○ 2 thicknesses○ 3 carbon doses○ Shallow and deep gain layer (GL)
Latest R&D production of LGADs for CMS ETLWafer thickness GL depth Carbon
4 45 μm shallow 0.4*A
7 55 μm shallow A
10 45 μm deep 0.6*A
12 45 μm deep A
14 45 μm deep A
Explore different doses around the optimal “A” dose defined with the previous UFSD3 production
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FBK UFSD3.2
Siviero F. 37th RD50 Online Workshop , 20.11.2020 7
● 5 wafers for ETL measured so far:○ 2 thicknesses○ 3 carbon doses○ Shallow and deep gain layer (GL)
Latest R&D production of LGADs for CMS ETLWafer thickness GL depth Carbon
4 45 μm shallow 0.4*A
7 55 μm shallow A
10 45 μm deep 0.6*A
12 45 μm deep A
14 45 μm deep A
Introduce deep gain layer implant to improve radiation resistance → interesting to compare performances with the standard shallow GL
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FBK UFSD3.2
Siviero F. 37th RD50 Online Workshop , 20.11.2020 8
● 5 wafers for ETL measured so far:○ 2 thicknesses○ 3 carbon doses○ Shallow and deep gain layer (GL)
● All sensors are 2x2 arrays with “safe” interpad design strategy → interpad gap = 65 / 70 μm
Latest R&D production of LGADs for CMS ETLWafer thickness GL depth Carbon
4 45 μm shallow 0.4*A
7 55 μm shallow A
10 45 μm deep 0.6*A
12 45 μm deep A
14 45 μm deep A
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Siviero F. 37th RD50 Online Workshop , 20.11.2020 9
FBK UFSD3.2
Wafer VBD
4 250
7 300
10 375
12 385
14 300
● charge [fC] = Area [pWb] / 4700○ 4700 = board transimpedance
● All sensors deliver 15 fC ○ target charge for electronics
deep GL
No significant differences between deep and shallow GL
preliminary
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HPK2
Siviero F. 37th RD50 Online Workshop , 20.11.2020 10
● 4 gain split:○ split 1,2 highly doped ○ split 3,4 less doped
● All splits feature deep GL, no carbon, 45μm active thickness
● All measured devices are 2x2 arrays with interpad design strategy “IP5” or “IP7” → interpad gap = 100 / 120 μm
Gain split thickness GL depth Carbon
1 45 μm deep NO
2 45 μm deep NO
3 45 μm deep NO
4 45 μm deep NO
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Siviero F. 37th RD50 Online Workshop , 20.11.2020 11
HPK2
Split VBD
1 160
2 180
3 220
4 240
● Splits 1,2 heavily doped → operate at very low V
○ Particularly interesting for ATLAS as they are the most rad-hard
● Splits 3,4 are less rad-hard but with better performances when new
preliminary
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Siviero F. 37th RD50 Online Workshop , 20.11.2020 12
HPK2
Split VBD
1 160
2 180
3 220
4 240
We focused in particular on split 4, since it has the best performance when new (it might be the most suited for ETL) → remaining splits will be measured soon
● Splits 1,2 heavily doped → operate at very low V
○ Particularly interesting for ATLAS as they are the most rad-hard
● Splits 3,4 are less rad-hard but with better performances when new
preliminary
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Outline
Siviero F. 37th RD50 Online Workshop , 20.11.2020 13
➢ The FBK UFSD3.2 & HPK2 productions
➢ Torino β-source setup
➢ Measurements of sensors for the CMS Encap Timing Layer:
○ FBK + HPK non-irradiated
○ HPK irradiated
➢ Comparison of FBK sensors with different active thicknesses: 35, 45, 55 μm
![Page 14: FBK UFSD3.2 & HPK2 LGAD productionsFBK + HPK non-irradiated HPK irradiated Comparison of FBK sensors with different active thicknesses: 35, 45, 55 μm Outline Siviero F. 37th RD50](https://reader036.fdocuments.in/reader036/viewer/2022062611/6129baf24ad63015767769f0/html5/thumbnails/14.jpg)
Torino β-source setup - 1
Siviero F. 37th RD50 Online Workshop , 20.11.2020 14
● DAQ and Analysis are fully automated○ Based on UCSC DAQ software○ works with pyVISA
● Compact, easy-to-use○ can be mounted in < 1h
● Dark box for measurements at room temp● Fridge + dry air for cold measurements
Lecroy 9404HD 40 Gs/s
Dark box
CAEN HV
LV
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Torino β-source setup - 2
Siviero F. 37th RD50 Online Workshop , 20.11.2020 15
● Sr90 source, can work down to -40°C○ 3.6 kBq → max activity allowed in our lab
● Telescope formed by DUT + Trigger
● Trigger placed below the DUT ensures that we trigger only on MIPs
○ Trigger: HPK1 1x3 mm^2 single pad DUT
Trigger
Beta trajectory
3D-printed structure for sensors alignment
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Torino β-source setup - 2
Siviero F. 37th RD50 Online Workshop , 20.11.2020 16
● Sr90 source, can work down to -40°C○ 3.6 kBq → max activity allowed in our lab
● Telescope formed by DUT + Trigger
● Trigger placed below the DUT ensures that we trigger only on MIPs
○ Trigger: HPK1 1x3 mm^2 single pad
● “Santa Cruz” Read-out board made by Artel○ single channel○ x10 amplification (+ 20dB Cividec
broadband external amplifier)
DUT
Trigger
Beta trajectory
3D-printed structure for sensors alignment
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Torino β-source setup - 3
Siviero F. 37th RD50 Online Workshop , 20.11.2020 17
● Analysis code partially based on UCSC one and adapted to our setup
● Important parameters for time resolution: signal amplitude, area (charge), ToA○ Signal amplitude: gaussian fit around sampled point with maximum V○ Signal area: take 10% and 20% on both rising / falling edge → linear interpolation to find
start and end time of the signal → Integral of the signal using Simpson's rule○ Time of Arrival: once time corresponding to signal maximum (Tmax) has been determined,
take the two sampled points closest to the xx% of the signal → linear interpolation to find the time corresponding to xx%
● Temporal resolution defined as σDUT = √(σ 2measured - σ
2Trigger)
○ σ measured is the std. deviation of ToA DUT - ToA Trigger
○ 20% CFD usually provides the best result
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Siviero F. 37th RD50 Online Workshop , 20.11.2020 18
Dry & Cold β setup● Commissioning of a cold setup started in September in
Torino● Commercial freezer that can work in the -10°C / -30°C range● Old setup:
○ Dry air provided by a commercial compressor → main issue: 30-50% humidity
○ Sensors can be measured, although it is not ideal○ Performed several measurements with no issue○ But, metal support of our beta source eventually rusted
because of the ice forming on it → we had to stop measurements and look for a better compressor
● New setup○ Same freezer but better compressor → <10% humidity
● Future setup○ Climate chamber (next year)
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Outline
Siviero F. 37th RD50 Online Workshop , 20.11.2020 19
➢ The FBK UFSD3.2 & HPK2 productions
➢ Torino β-source setup
➢ Measurements of sensors for the CMS Encap Timing Layer:
○ FBK + HPK non-irradiated
○ HPK irradiated
➢ Comparison of FBK sensors with different active thicknesses: 35, 45, 55 μm
![Page 20: FBK UFSD3.2 & HPK2 LGAD productionsFBK + HPK non-irradiated HPK irradiated Comparison of FBK sensors with different active thicknesses: 35, 45, 55 μm Outline Siviero F. 37th RD50](https://reader036.fdocuments.in/reader036/viewer/2022062611/6129baf24ad63015767769f0/html5/thumbnails/20.jpg)
Resolution vs Bias
Siviero F. 37th RD50 Online Workshop , 20.11.2020 20
● All FBK sensors reached ~30ps● HPK split 1 and 2 cannot reach 30ps since bias voltage is too low: electrons drift velocity not yet saturated ● Noise is low for all sensors: 1.2 / 1.5 mV
All sensors are non irradiated and measured at room T (23°C)
deep GL
preliminary preliminary
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Resolution vs Gain
Siviero F. 37th RD50 Online Workshop , 20.11.2020 21
deep GL
High gain in both productions
preliminary preliminary
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Resolution vs Gain
Siviero F. 37th RD50 Online Workshop , 20.11.2020 22
● HPK needs higher gain to reach 30ps as they are operated at lower V
preliminary preliminary
deep GL
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Resolution vs Gain
Siviero F. 37th RD50 Online Workshop , 20.11.2020 23
● HPK needs higher gain to reach 30ps as they are operated at lower V● Effect well visible comparing HPK split1 and split4: the gain required to reach a given resolution is higher
in sensors operated at lower V ( = lower E field → worse dV/dt )
increasing electric field
preliminary preliminary
deep GL
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Resolution vs Gain
Siviero F. 37th RD50 Online Workshop , 20.11.2020 24
● HPK needs higher gain to reach 30ps as they are operated at lower V● Effect well visible comparing HPK split1 and split4: the gain required to reach a given resolution is higher
in sensors operated at lower V ( = lower E field → worse dV/dt )
increasing electric field
A good time resolution is given by the interplay of high gain and high electric field → GL doping must be chosen
to optimize these two aspects
preliminary preliminary
deep GL
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Jitter
Siviero F. 37th RD50 Online Workshop , 20.11.2020 25
total resolution
● Estimated jitter = noise / (dV/dt)○ noise : RMS of the baseline○ dV/dt (slew rate): derivative of the signal rising edge, taken from 20% to 80%
jitter only
preliminary preliminary
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Jitter
Siviero F. 37th RD50 Online Workshop , 20.11.2020 26
● Total resolution vs Gain flattens around 30ps because of the Landau term ( σLandau )
total resolution
jitter only
preliminary preliminary
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Siviero F. 37th RD50 Online Workshop , 20.11.2020 27
Temperature scan
● We performed a temperature scan on both productions● For deep implants, the bias shift to reach 30ps is ~ 1V/1°C : ΔT = 55°C → ΔV = 55-60 V● We will measure a sensor with shallow GL soon
-10°C
- 30°C
23°C 23°C
- 30°C -10°C
ΔV = 55
preliminary preliminary
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Outline
Siviero F. 37th RD50 Online Workshop , 20.11.2020 28
➢ The FBK UFSD3.2 & HPK2 productions
➢ Torino β-source setup
➢ Measurements of sensors for the CMS Encap Timing Layer:
○ FBK + HPK non-irradiated
○ HPK irradiated
➢ Comparison of FBK sensors with different active thicknesses: 35, 45, 55 μm
![Page 29: FBK UFSD3.2 & HPK2 LGAD productionsFBK + HPK non-irradiated HPK irradiated Comparison of FBK sensors with different active thicknesses: 35, 45, 55 μm Outline Siviero F. 37th RD50](https://reader036.fdocuments.in/reader036/viewer/2022062611/6129baf24ad63015767769f0/html5/thumbnails/29.jpg)
HPK2 split 4 irradiated
Siviero F. 37th RD50 Online Workshop , 20.11.2020 29
● Tested sensors (all 2x2 arrays):○ split4 IP5 non-irr
○ split4 IP7 1.5e15 neq/cm2 → max nominal fluence foreseen for the inner part of ETL
○ split4 IP7 2.5e15 neq/cm2 → max fluence considering a x1.5 safety margin
● Measurements performed at -30°C, relative humidity ~40%
Expected radiation levels @ ETL
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HPK2 split4 irradiated
Siviero F. 37th RD50 Online Workshop , 20.11.2020 30
● 12fC delivered @ 1.5e15 neq/cm2
● 7fC @ 2.5e15 neq/cm2
non-irr
1.5e15
2.5e15
preliminary
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HPK2 split4 irradiated
Siviero F. 37th RD50 Online Workshop , 20.11.2020 31
● Time resolution in the 30-40ps range up to a fluence of 2.5e15 neq/cm2
● Most irradiated device operated for many hours at 775V with no issues → good check of sensors stability
non-irr
1.5e15
2.5e15
non-irr1.5e15
2.5e15
preliminarypreliminary
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HPK2 split4 irradiated
Siviero F. 37th RD50 Online Workshop , 20.11.2020 32
● Time resolution in the 30-40ps range up to a fluence of 2.5e15 neq/cm2
● Most irradiated device operated for many hours at 775V with no issues → good check of sensors stability
non-irr
1.5e15
2.5e15
non-irr1.5e15
2.5e15
best CFD non-irr, 1.5e15 : 20%
2.5e15 : 40%
preliminarypreliminary
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HPK2 split4 irradiated
Siviero F. 37th RD50 Online Workshop , 20.11.2020 33
● Time resolution in the 30-40ps range up to a fluence of 2.5e15 neq/cm2
● Most irradiated device operated for many hours at 775V with no issues → good check of sensors stability
HPK2 split4 meets the ETL requirements!
non-irr
1.5e15
2.5e15
non-irr1.5e15
2.5e15
preliminarypreliminary
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Outline
Siviero F. 37th RD50 Online Workshop , 20.11.2020 34
➢ The FBK UFSD3.2 & HPK2 productions
➢ Torino β-source setup
➢ Measurements of sensors for the CMS Encap Timing Layer:
○ FBK + HPK non-irradiated
○ HPK irradiated
➢ Comparison of FBK sensors with different active thicknesses: 35, 45, 55 μm
![Page 35: FBK UFSD3.2 & HPK2 LGAD productionsFBK + HPK non-irradiated HPK irradiated Comparison of FBK sensors with different active thicknesses: 35, 45, 55 μm Outline Siviero F. 37th RD50](https://reader036.fdocuments.in/reader036/viewer/2022062611/6129baf24ad63015767769f0/html5/thumbnails/35.jpg)
FBK UFSD3.2 → Thin sensors
Siviero F. 37th RD50 Online Workshop , 20.11.2020 35
● 2 additional wafers (not ETL) have been produced at FBK:
○ 25 / 35 μm active thickness○ only 35 μm considered here
Wafer thickness GL depth Carbon
4 45 μm shallow 0.4*A
6 35 μm shallow A
7 55 μm shallow A
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FBK UFSD3.2 → Thin sensors
Siviero F. 37th RD50 Online Workshop , 20.11.2020 36
● 2 additional wafers (not ETL) have been produced at FBK:
○ 25 / 35 μm active thickness○ only 35 μm considered here
● Tested sensors:○ W4 & W7 2x2 arrays
Wafer thickness GL depth Carbon
4 45 μm shallow 0.4*A
6 35 μm shallow A
7 55 μm shallow A
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FBK UFSD3.2 → Thin sensors
Siviero F. 37th RD50 Online Workshop , 20.11.2020 37
● 2 additional wafers (not ETL) have been produced at FBK:
○ 25 / 35 μm active thickness○ only 35 μm considered here
● Tested sensors:○ W4 & W7 2x2 arrays○ W6 single pad
Wafer thickness GL depth Carbon
4 45 μm shallow 0.4*A
6 35 μm shallow A
7 55 μm shallow A
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FBK UFSD3.2 → Thin sensors
Siviero F. 37th RD50 Online Workshop , 20.11.2020 38
● 2 additional wafers (not ETL) have been produced at FBK:
○ 25 / 35 μm active thickness○ only 35 μm considered here
● Tested sensors:○ W4 & W7 2x2 arrays○ W6 single pad
● Comparison performed only on pre-rad devices at room T
Wafer thickness GL depth Carbon
4 45 μm shallow 0.4*A
6 35 μm shallow A
7 55 μm shallow A
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Performance of thin sensors
Siviero F. 37th RD50 Online Workshop , 20.11.2020 39
35um
55um45um
W6 is the 1st wafer comprising thin sensors manufactured at FBK→ designed for tracking at extreme fluences (see V.Sola’s talk), not optimized for timing
35um
45um
55um
preliminarypreliminary
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Performance of thin sensors
Siviero F. 37th RD50 Online Workshop , 20.11.2020 40
35um
55um45um 35um
45um
55um
Wafer VBD
4 (45um) 250
6 (35um) 230
7 (55um) 300
W6 is the 1st wafer comprising thin sensors manufactured at FBK→ designed for tracking at extreme fluences (see V.Sola’s talk), not optimized for timing
preliminarypreliminary
Lower collected charge and VBD because of the smaller volume
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Performance of thin sensors
Siviero F. 37th RD50 Online Workshop , 20.11.2020 41
35um
55um45um
W6 is the 1st wafer comprising thin sensors manufactured at FBK→ designed for tracking at extreme fluences (see V.Sola’s talk), not optimized for timing
35um
45um
55um
low noise and good gain, regardless the active thickness
preliminarypreliminary
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Siviero F. 37th RD50 Online Workshop , 20.11.2020 42
FBK thin sensors: time resolution
W6 (35μm) reaches 28ps:
● Smaller σLandau because it is thin
● but, worse dV/dt:○ risetime similar to thicker device○ smaller V because capacitance is
higher (approx. 4.5pF instead of 3pF) → worse jitter
35um 55um45um
preliminary
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Siviero F. 37th RD50 Online Workshop , 20.11.2020 43
FBK thin sensors: jitter
35um
55um
45um
total resolution
jitter only
● Estimated jitter = noise / (dV/dt)preliminary
Measurements of gain on thin sensors are still very preliminary → need further studies for a precise determination
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Siviero F. 37th RD50 Online Workshop , 20.11.2020 44
FBK thin sensors: jitter
35um
55um
45um
total resolution
jitter only
● Estimated jitter = noise / (dV/dt)
● Compare total resolution and jitter and get the Landau term:
○ σLandau (35μm) = 25 ps
○ σLandau (45μm) = 28.5 ps
○ σLandau (55μm) = 32 ps
preliminary
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Siviero F. 37th RD50 Online Workshop , 20.11.2020 45
FBK thin sensors: the Landau term
35um
55um
45um
● Estimated jitter = noise / (dV/dt)
● Compare total resolution and jitter and get the Landau term:
○ σLandau (35μm) = 25 ps
○ σLandau (45μm) = 28.5 ps
○ σLandau (55μm) = 32 ps
→ go thin to minimize Landau fluctuations25um
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Summary & outlook
Siviero F. 37th RD50 Online Workshop , 20.11.2020 46
● The FBK UFSD3.2 & HPK2 productions have been extensively measured in Torino with a β-source setup:
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Summary & outlook
Siviero F. 37th RD50 Online Workshop , 20.11.2020 47
● The FBK UFSD3.2 & HPK2 productions have been extensively measured in Torino with a β-source setup:○ FBK UFSD3.2 features different level of carbon and either shallow and deep GL → all sensors have good gain and
low noise, reaching 30ps time resolution
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Summary & outlook
Siviero F. 37th RD50 Online Workshop , 20.11.2020 48
● The FBK UFSD3.2 & HPK2 productions have been extensively measured in Torino with a β-source setup:○ FBK UFSD3.2 features different level of carbon and either shallow and deep GL → all sensors have good gain and
low noise, reaching 30ps time resolution ○ HPK2 features only deep-GL and no carbon: splits 3,4 work well when new, whereas splits 1 and 2 (heavily doped)
operate at too low V → GL doping must be carefully chosen to provide both high gain and high electric field
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Summary & outlook
Siviero F. 37th RD50 Online Workshop , 20.11.2020 49
● The FBK UFSD3.2 & HPK2 productions have been extensively measured in Torino with a β-source setup:○ FBK UFSD3.2 features different level of carbon and either shallow and deep GL → all sensors have good gain and
low noise, reaching 30ps time resolution ○ HPK2 features only deep-GL and no carbon: splits 3,4 work well when new, whereas splits 1 and 2 (heavily doped)
operate at too low V → GL doping must be carefully chosen to provide both high gain and high electric field
● UFSD3.2 & HPK2 have been measured at different temperatures:○ In sensors with deep GL, the bias shift to reach 30ps is ~ 1V/1°C
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Summary & outlook
Siviero F. 37th RD50 Online Workshop , 20.11.2020 50
● The FBK UFSD3.2 & HPK2 productions have been extensively measured in Torino with a β-source setup:○ FBK UFSD3.2 features different level of carbon and either shallow and deep GL → all sensors have good gain and
low noise, reaching 30ps time resolution ○ HPK2 features only deep-GL and no carbon: splits 3,4 work well when new, whereas splits 1 and 2 (heavily doped)
operate at too low V → GL doping must be carefully chosen to provide both high gain and high electric field
● UFSD3.2 & HPK2 have been measured at different temperatures:○ In sensors with deep GL, the bias shift to reach 30ps is ~ 1V/1°C
● HPK2 split4 irradiated up to a fluence of 2.5e15 neq/cm2 has been measured at -30°C○ It reached 40ps even at the largest fluence
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Summary & outlook
Siviero F. 37th RD50 Online Workshop , 20.11.2020 51
● The FBK UFSD3.2 & HPK2 productions have been extensively measured in Torino with a β-source setup:○ FBK UFSD3.2 features different level of carbon and either shallow and deep GL → all sensors have good gain and
low noise, reaching 30ps time resolution ○ HPK2 features only deep-GL and no carbon: splits 3,4 work well when new, whereas splits 1 and 2 (heavily doped)
operate at too low V → GL doping must be carefully chosen to provide both high gain and high electric field
● UFSD3.2 & HPK2 have been measured at different temperatures:○ In sensors with deep GL, the bias shift to reach 30ps is ~ 1V/1°C
● HPK2 split4 irradiated up to a fluence of 2.5e15 neq/cm2 has been measured at -30°C○ It reached 40ps even at the largest fluence
● We measured 3 UFSD3.2 with different thicknesses (45, 35, 25 μm):○ First production of thin sensors by FBK → optimized for tracking, not for timing○ thin sensors reached 28ps, comparable with resolution of thicker sensors
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Summary & outlook
Siviero F. 37th RD50 Online Workshop , 20.11.2020 52
● The FBK UFSD3.2 & HPK2 productions have been extensively measured in Torino with a β-source setup:○ FBK UFSD3.2 features different level of carbon and either shallow and deep GL → all sensors have good gain and
low noise, reaching 30ps time resolution ○ HPK2 features only deep-GL and no carbon: splits 3,4 work well when new, whereas splits 1 and 2 (heavily doped)
operate at too low V → GL doping must be carefully chosen to provide both high gain and high electric field
● UFSD3.2 & HPK2 have been measured at different temperatures:○ In sensors with deep GL, the bias shift to reach 30ps is ~ 1V/1°C
● HPK2 split4 irradiated up to a fluence of 2.5e15 neq/cm2 has been measured at -30°C○ It reached 40ps even at the largest fluence
● We measured 3 UFSD3.2 with different thicknesses (45, 35, 25 μm):○ First production of thin sensors by FBK → optimized for tracking, not for timing○ thin sensors reached 28ps, comparable with resolution of thicker sensors
● Measurement campaign will continue in the next months: irradiated FBK, remaining splits of irradiated HPK2, irradiated thin sensors
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Thank You!
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BACKUP
Siviero F. 37th RD50 Online Workshop , 20.11.2020 54
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Siviero F. 37th RD50 Online Workshop , 20.11.2020 55
FBK + HPK Temperature scans: jitter
solid: total res
dashed: jitter only
23°C
23°C
-10°C
-10°C
- 30°C - 30°C
preliminary preliminary
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Siviero F. 37th RD50 Online Workshop , 20.11.2020 56
FBK + HPK Temperature scans
● Tested sensors:○ FBK UFSD3.2 W12, W10 (deep GL, carbon, 45μm active thickness)○ HPK2 split4
-10°C
- 30°C
23°C
23°C
-10°C - 30°C
preliminary preliminary
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Siviero F. 37th RD50 Online Workshop , 20.11.2020 57
FBK + HPK Temperature scans - 2
● Gain needed to reach 30ps is smaller at cold since the mobility is higher
-10°C
- 30°C
23°C
-10°C
- 30°C
23°C
preliminary preliminary
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Siviero F. 37th RD50 Online Workshop , 20.11.2020 58
HPK2 split4 irradiated - 2
low noise even in the most irradiated sensor, between 1.2 and 1.7 mV
preliminary preliminary