Fast Thyristors for Induction Heating Solutions · Fast Thyristors for Induction Heating ... for...

POWER SEMICONDUCTORSFast Thyristors for InductionHeating Solutions

ISSUE 5 – August 2014 www.power-mag.com

Also inside this issueOpinion | Market News | EPE’14 ECCEPower Electronics Research | Industry News IGBT Gate Driver | IGBT Drivers | 700-V Flyback RegulatorProducts | Website Locator

01_PEE_0514 (9)_p01 Cover 29/07/2014 09:11

Melting systems, surface hardening or preheating – Induction heating applications are manifold. ABB’s fast thyristors deliver the performance induction heating applica-tions are asking for.ABB’s family of fast switching thyristors are available with blocking voltages from 1,200 to 3,000 volt, average forward currents from 500 to 2,700 ampere and turn-off times from 8 to 100 microseconds.For more information please contact us or visit our website: www.abb.com/semiconductors

ABB Switzerland Ltd. / ABB s.r.o.www.abb.com/[email protected].: +41 58 586 1419

Fast thyristor. When burning for induction heating solutions.

02_PEE_0514_Layout 28/07/2014 10:43 Page 1

CONTENTS

www.power-mag.com Issue 5 2014 Power Electronics Europe

3

Editor Achim ScharfTel: +49 (0)892865 9794Fax: +49 (0)892800 132Email: [email protected]

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ISSN 1748-3530

PAGE 10

EPE’14 ECCE

PAGE 11

Power Electronics Research

PAGE 16

Industry News

PAGE 21

Innovative IGBT Driver ICResolves Dilemma of GateResistor SelectionThe use of motor line inductors, dv/dt filters or sine wave filters helps to adapt thevariable frequency inverter with its fast switching IGBT to the motor. This isnormally much easier than an individual adaption to the application requirementsof the inverter itself by individual selection of gate resistors. However, such a dv/dtfilter increases the price, losses and size of a variable speed drive. This articledescribes a smart way to implement an easy-to-use adaption by means of anintelligent selection of an IGBT gate driver IC combining both, lower EMI andhigher efficiency. Dr. Wolfgang Frank, Infineon Technologies AG, Germany

PAGE 28

Powering IGBT Gate Drives withDC/DC ConvertersIGBTs can now be found in high power devices with effective gate capacitancesmeasured in hundreds of nanofarads. Although this capacitance has simply to becharged and discharged to turn the IGBT on and off, the circulating current to doso causes significant power dissipation in voltage drops in the gate driver circuitand within the IGBT. An emerging trend is to use a DC/DC converter to provideoptimum power rails for driving IGBTs. Paul Lee – Director of BusinessDevelopment, Murata Power Solutions, UK

PAGE 30

High-Voltage Switcher Achieves 5Percent Current RegulationAccuracyIn chargers it is often necessary to adjust the output current in addition to theoutput voltage. In recent years primary side regulation (PSR) methods withoutoptical coupler are gaining popularity. Such methods pose challenges on theaccuracy that we can obtain because of the indirect sensing of the output currentand voltage. The UCC28910 is the first TI high-voltage switcher that achievesoutput current regulation accuracy within 5% – without external components.Rosario Davide Stracquadaini, System Engineer, Texas Instruments,Catania, Italy

PAGE 32

ProductsProduct Update

PAGE 33

Website Product Locator

Fast Thyristors forInduction HeatingSolutionsInduction heating is one of the key metal industryapplications using high-power resonant converters. Thepower range of such converters goes up to 10 MWand there is no more efficient alternative as switchingdevice than the bipolar fast thyristor. It has beenproven for years that the heavy metal industry relies onthe reliability and performance of fast thyristors. And asin many other market segments also in the heavymetal industry there is a general trend towardsincreased power and power density, higher efficiencyand productivity. Fast thyristors are one of the keyenablers to follow these trends. The most powerfulapplications are melting and pouring in the heavymetal industry with furnace capacities of up to 50 tonsand inverter powers of up to 50 MW. ABB provides foryears fast switching thyristors and further expands itsportfolio for high-power resonant inverters. Moredetails on page 25.

Cover supplied by ABB Semiconductors

COVER STORY

PAGE 6

Market NewsPEE looks at the latest Market News and company

developments

p03 Contents.QXD_p03 Contents 29/07/2014 09:12

Connecting Global Competence

Welcome to Planet e.The entire embedded universe at a single location!

26th International Trade Fair for Electronic Components, Systems and ApplicationsMesse MünchenNovember 11–14, 2014www.electronica.de

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04_PEE_0514_Layout 28/07/2014 10:47 Page 1

OPINION 5


A suitablequote as alead in to

the editorsopinion

The year 2020 could see an estimated GaN device market size ofalmost $600 million, expects market researcher Yole. Ramp-up willbe quite impressive starting in 2016, at an estimated 80% CAGRthrough 2020, based upon a scenario where EV/HEV beginsadopting GaN in the 2018-2019 time frame. Recentannouncements show that the GaN industry is taking shape asmergers, acquisitions and license agreements are settled. Thelatest Transphorm-Fujitsu agreement, in addition to Furukawa’s IPportfolio’s exclusive licensing, are positive signs that GaNtechnology is spreading across the value chain, reinforcing theleaders’ market position but likely leaving the weakest players bythe wayside. One example of this statement is the Germany-basedMicroGaN – previously participating in the German researchproject NEULAND. Yole forecasts that 2014 will only generate $10– 12 million in device sales (in addition to R&D contracts and soforth). Such a moderate business means only the strongest willsurvive, and that several early-birds will see their cash-flow swiftlydissipate. The GaN business will really ramp up in 2016, exceedingthe “psychological threshold” of $50 million in revenue. In the NEULAND project (2010-2013) six companies from the

semiconductor and solar industries joined forces to explore newtechnologies for renewable power sources. NEULAND stands forinnovative power devices with high energy efficiency and costeffectiveness based on wide bandgap compound semiconductors.The project aims to reduce the losses in feeding electricity into thegrid, e.g. in photovoltaic inverters, by as much as 50 percent –

without significantly increasing system costs by usingsemiconductor devices based on SiC and GaN-on-Si. TheNEULAND project was headed by Infineon. Before NEULAND, SiCwas a very expensive wafer material. Now more SiC vendors andthe number of possible applications has grown. The projectpartners were able to demonstrate that the efficiency of powerelectronics can be increased by more than a third using SiC andGaN-based components. A new German research anddevelopment project “Future efficient energy conversion withgallium-nitride-based power electronics for the next generation(ZuGaNG)” aims at the realization of a new product generation forpower electronics. In the scope of the project, scientists from anassociation of industry and research partners develop high voltageGaN transistors for applications in voltage converters. The project isfunded by the German Federal Ministry for Education andResearch with approximately 4 million Euros. The project aimes forboth a significant increase in the energy efficiency of voltageconverters and a reduction of production costs for GaN-basedpower transistors of up to 50 %. Due to their high switchingfrequency, the transistors reduce losses of voltage converters andwork reliably, even in high temperatures. Physical properties of thesemiconductor gallium nitride, such as the high electron mobilityand critical field strength facilitate the realization of powertransistors with a longer lifetime and higher robustness incomparison to conventionally used silicon devices. An approach fora lasting reduction of production costs is, among others, anintegration of the GaN-based transistors in CMOS production lines. Infineon Technologies AG is expanding its Austrian site in Villach.

Core emphasis is the on the expansion of expertise for themanufacturing of the future as well as R&D. The expansion planforesee investments and research costs amounting to a total ofEuro 290 million, creating approximately 200 new jobs in theperiod from 2014 to 2017, primarily in R&D. This investment planfocuses on the integration of substrates such as GaN and SiC – afirst official statement on power GaN from this company. According to market researcher IDTechEx very different options

for the elements of an EV are now emerging. It may be possible tohave flexible batteries over the skin of the car in due course.Sometimes such laminar batteries permit faster charging andgreater safety. In about ten years structural components - load-bearing supercapacitors and batteries will save even more spaceand weight in the most advanced vehicles. Vehicleelectrics/electronics will be a greater part of the cost of the vehicleas they replace hardware and give greater safety and performance.Electronics will change radically from the introduction of widebandgap power semiconductors to printed electronics. There isscope for energy harvesting from shock absorbers, thermoelectricharvesting which will be viable around 2017 and there will besome local harvesting for devices around the vehicle. Launches ofproduction models of fuel cell cars are promised around 2015 bycompanies such as Hyundai, Toyota, Daimler and Tata Motors,bringing these center stage to the contempt of competitors thatconsider them to be a dead end. New car technologies such assupercapacitors, SiC and GaN power components, switchedreluctance motors, merged and structural electric components,contactless charging and harvesting heat, light and verticalmovement are on the horizon.

Enjoy reading!

Achim ScharfPEE Editor

Waiting forWidespread GaNAdoption

05_PEE_0514_p05 Opinion 28/07/2014 10:08

6 MARKET NEWS

Issue 5 2014 Power Electronics Europe www.power-mag.com

Market researcher IDTechEx finds that the global sale of hybrid and pureelectric cars will triple to around $180 billion in 2024 as they are transformedin most respects. Ten year forecasts are provided in a new report, “Hybrid andPure Electric Cars 2014-2024” - unique in revealing how everything aboutsuch cars is being reinvented. There are chapters on in-wheel motors, fuel cell cars and the transformed

battery situation. In-wheel motors are at last appearing in born-electric vehiclesoptimized for this disruptive change. 140 lithium-ion battery manufacturersand their changing success with EVs and changing chemistry are analyzed.They are now threatened by Tesla planning a mega factory to dwarf all of them put together.

Launches of production models of fuel cell cars are promised around 2015by companies such as Hyundai, Toyota, Daimler and Tata Motors, bringingthese center stage to the contempt of competitors that consider them to be adead end. New car technologies such as supercapacitors, SiC and GaN powercomponents, switched reluctance motors, merged and structural electriccomponents, contactless charging and harvesting heat, light and verticalmovement are presented. IDTechEx sees a gathering trend towards OEMs

making their own key enabling technologies. It reveals that there are far morethan the traditional three key enabling technologies now and explains theirfuture.Very different options for the elements of an EV are now emerging. It may

be possible to have flexible batteries over the skin of the car in due course.Sometimes such laminar batteries permit faster charging and greater safety. Inabout ten years structural components - load-bearing supercapacitors andbatteries will save even more space and weight in the most advancedvehicles.

Vehicle electrics will be a greater part of the cost of the vehicle as theyreplace hardware and give greater safety and performance. Electrics willchange radically from the introduction of wide bandgap power semiconductorsto printed electronics. There is scope for energy harvesting from shockabsorbers, thermoelectric harvesting which will be viable around 2017 andthere will be some local harvesting for devices around the vehicle (eg Fiatvision).

www.IDTechEx.com/cars

Electric Cars Reinvented

Record-Year for PhotovoltaicsWith at least 38.4 gigawatts (GW) of newly-installed solar photovoltaic (PV) capacityworldwide and a global cumulative installedcapacity of 138.9 GW, 2013 was anotherhistoric year for solar PV technology.The European Photovoltaic Industry

Association (EPIA) released at Intersolar inMunich its new report “Global Market Outlookfor Photovoltaics 2014-2018”. Compared to thetwo previous years, where global installedcapacity hovered slightly above 30 GW annually,the PV market progressed remarkably in 2013,reaching a new record-level. Nevertheless, forthe first time since 2003, Europe, with a veryhigh and stable level of nearly 11 GW

connected to the grid in 2013, lost itsleadership to Asia. EPIA forecasts indicate thatthe globalization trend of PV markets observedin 2013 will continue and further accentuate inthe coming years. “The forecast for Europe inthe next years should, however, be put intoperspective and be considered as a stabilizationtowards a solid level, around 10 GW a year,”stated Oliver Schäfer, EPIA President. “Europe’ssituation at the end of last year shows that PV,as any other energy business, remains policy-driven. A series of retrospective measures wereimplemented in the last years in variousEuropean countries, leading to the sharp marketdecrease observed in 2013. Sustainable,

predictable and dynamic framework conditionand policies are needed in Europe and globallyto provide enough visibility to investors,” headded. For the third year in a row, PV in 2013was amongst the two most installed sources ofelectricity in the EU. “PV is becoming a majorpart of the electricity system all over the globe,changing the way our world is powered.Policymakers and energy stakeholders shouldnow understand that electricity grids andmarkets need to be adapted to fit these newrealities and facilitate a cost-efficient energytransition,” Schäfer concluded.

www.epia.org

Evolution ofEuropean PVcumulativeinstalled capacity2000-2013

Market News_Layout 1 28/07/2014 10:54

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8 MARKET NEWS

Maxim Integrated, a $2.4 billion US-based company, announced that itslithium-ion (Li+) battery monitor is being used by Nissan Motor Co. Ltd.for the Nissan Pathfinder Hybrid. The Li+ battery system is supplied byHitachi Automotive Systems.

Hitachi Vehicle Energy developed the system and incorporated thebattery monitor. The Li+ battery monitor provides self-diagnostics anddaisy-chained data communications that handles the high-voltagerequirements of the automotive industry. “Maxim’s battery cell-monitoringIC was integral to achieving the highly reliable, smaller, lighter, and high-power Li+ battery system required for the newest hybrid car,” said Mr.Koji Masui, Department Manager, Lithium Ion Battery Development Dept.,Hitachi Automotive Systems, Ltd. “The automotive market is a majorfocus for us, and I am pleased that Nissan selected our cell-monitoring ICfor its Pathfinder Hybrid,” said Kent Robinett, Managing Director,Automotive Marketing for Maxim Integrated. “Maxim is advancing into anext-generation EV/HEV powertrain system, and we will continue todevelop highly integrated products for this important market.”

www.maximintegrated.com

BatteryManagement IC in Hybrid Car

The German state incentives in place for solar storage systems are enteringtheir second year. Since the program was launched in May, the purchase ofaround 4,000 solar batteries has been supported so far by low-interest loansof roughly 66 million Euros as well as subsidies exceeding 10 million Euros.

“The government covers a proportion of the purchase costs, making solarstorage systems affordable for both homeowners and business enterprises.Increasing numbers of people are becoming more independent from fossilenergy sources by making the wise decision to invest in a photovoltaicstorage system and, in doing so, they are in turn driving forward the energytransition,” stated Jörg Mayer, CEO of the German Solar Industry Associationat Intersolar Europe in June. By balancing out peaks in production, batterystorage systems contribute towards easing the burden on power grids as wellas increasing the connection capacity for further solar installations withoutadditional costs being incurred. The incentive program has the potential toissue enough repayment grants to support double the amount of batterystorage systems per year, which is why the German Solar Industry Associationis expecting a significantly higher drawdown of funds in 2014. “Anyoneplanning to invest in a photovoltaic installation with a capacity of up to 30kWp should certainly consider fitting a battery storage system as well. It iseven possible to retrofit photovoltaic installations with storage devices,provided that the existing installation came into operation after December 31,2012,” said Mayer.

www.solarwirtschaft.de

Incentives for SolarStorage Systems


MARKET NEWS 9


Power GaN to Ramp Up in 2016Yole Développement analyses the Power GaN industry in its new report,Power GaN Market released in June. In this analysis, the company provides abill-of-material comparison of GaN versus Silicon at system level as well as apayback-time simulation focused on GaN’s extrat costs.2020 could see an estimated GaN device market size of almost $600

million, leading to approximately 580,000 x 6” wafers to be processed”,explains analyst Philippe Roussel. “Ramp-up will be quite impressive starting in2016, at an estimated 80% CAGR through 2020, based upon a scenariowhere EV/HEV begins adopting GaN in 2018-2019”. The power supply/PFCsegment will dominate the business from 2015-2018, representing 50 % ofdevice sales. At that point, automotive will then catch-up. “In UPS applications,the medium-power segment is likely to be very much in line with the GaNvalue proposition, and savings at system level will be demonstrated. We thinkGaN technology could grab up to 15 % of market share in this field by 2020”,details Roussel. Room for extra cost in motor drive applications is unlikely. Therefore, the

incentives to implement new technologies such as GaN have to be seriousand strong. Considering the possible improvement of conversion efficiency,and augmented by a predictable price parity with Si solutions by 2018, YoleDéveloppement expects GaN to start being implemented at a slow rate inmotor control by 2015-2016, and reach around $45 million in revenue by2020. The PV inverters segment has already adopted SiC technology, andproducts are now commercially available. It is possible that GaN could partiallydisplace SiC thanks to better price positioning. However, now that SiC is inplace, qualifying GaN may be more challenging. Recent announcements showthat the GaN industry is taking shape as mergers, acquisitions and licenseagreements are settled. ”The latest Transphorm-Fujitsu agreement, in additionto Furukawa’s IP portfolio’s exclusive licensing, are positive signs that GaNtechnology is spreading across the value chain, reinforcing the leaders’ market

position but likely leaving the weakest players by the wayside”, commentsRoussel. Yole forecasts that 2014 will only generate $10 – 12 million in devicesales (in addition to R&D contracts and so forth). Such a moderate businessmeans only the strongest will survive, and that several early-birds will see theircash-flow swiftly dissipate. The GaN business will really ramp up in 2016,exceeding the “psychological threshold” of $50 million in revenue.

www.yole.fr

Infineon Technologies AG is expanding its Austrian site in Villach. Coreemphasis is the on the expansion of expertise for the manufacturing of thefuture as well as R&D. The expansion plan foresee investments andresearch costs amounting to a total of Euro 290 million, creatingapproximately 200 new jobs in the period from 2014 to 2017, primarily inR&D.“The continuing development of Villach is a part of our group-wide

manufacturing strategy. At the site, important developments will beadvanced and production-ready innovative technologies will be transferredby Infineon to other sites. At the same time our strategy will includeexpansion of our volume manufacturing on 300 millimeter thin wafers inDresden and on 200 millimeter wafers in Kulim, Malaysia”, said PeterSchiefer, President of Operations. The pilot operation in Villach will featureproduction based on a cyber-physical system in the sense of Industry 4.0with highly modern production control and automation systems. Under theprerequisite of the highest possible data security and data integrity levels,the interaction of man and machine will attain a new dimension in thepilot facility. At the same time, Infineon will continue to pursue its goal ofincreased energy efficiency in production. A wide-scale research programwith innovations in materials, processes, technologies and systemexpertise is the second pillar of the Villach site expansion, supportingdevelopment of the next generation of energy-efficient products. Here theprogram focuses on the integration of substrates such as GaN and SiC, onMEMS (Micro-Electro-Mechanical Systems) and sensor technologies aswell as on the continuing development of 300 mm thin wafer technology.

www.infineon.com

Future Plans for Infineon’s Villach Site

Murata Power Solutions and Ericsson have entered into a technical collaborationagreement with the goal of accelerating the adoption of digital power products.Under the terms of this agreement each company will introduce a range ofstandardized digital power modules. This will result in the availability of multipleproduct sources to manufacturers that are considering migrating designs fromanalog to digitally monitored and controlled units. “We believe this joint initiativewill encourage manufacturers to speed up their adoption of digitally controlledpower systems. Initially, the benefits of using digitally controlled power sourceswere considered not to be worth the extra price. However, customers now can

see the advantages digital controland monitoring can bring to theirend application, so we believe thatby introducing a second-sourceroute of Ericsson’s products we willspeed the development of thismarket”, commented Tatsuo Bizen,CEO of Murata Power Solutions.Murata aims to launch the first oftheir standardized digitallycontrolled power modules into themarket during summer 2014.

www.murata-ps.com

Murata and Ericsson toCollaborate on Digital Power

With Ericsson Power Modules as secondsource Murata Power Solutions’ CEOTatsuo Bizen will accelerate digital poweradoption


10 EPE’14 ECCE www.epe2014.com


Challenges from industry and science, inaddition to the pressure from the EuropeanCommunity to give priority attention to energyefficiency issues, continue to provide stimulusfor new research directions for the powerelectronics discipline. Energy efficiency is thefield where both academia and industry needand want to achieve and excel. In this field,power electronics is considered the key todeveloping new energy efficient technologiesfor sustainable energy systems. EPE’14 ECCEfrom August 26 to 28 in Lappeenranta/Finlandcovers a wide range of topics at the cuttingedge of research and applications of powerelectronics. Those of you who have not had theopportunity to attend 2014 conferences suchas CIPS, APEC, PCIM or ISPSD (Hawaii) cannow travel to the very North-East. “An adult flying a kite on a darkly cloudy day

– symbolizing the largest European conferencein power electronics. Many people havewondered about the message behind ourconference banner. It is a story of science. Onceupon a time Benjamin Franklin was flying a silkkite during a thunderstorm. The story tells thatFranklin was conducting a science experimentto prove that thunderclouds containedelectricity. And it goes on to say that Franklinknew that getting struck by lightning would killhim. Every banner tells a story. The EPE’14-ECCE banner tells about a commitment toscience and a passion in proving the way thingsare working. It tells about us”, explains JuhaPyrhönen, General Chair.The EPE’14-ECCE event provides a

programme of over 40 working sessions, highprofile keynotes and plenary presentations, andlive debate. It attracts in excess of 600delegates from the full range of professions,expertise and business within power

electronics. Alongside an exhibition featuringsuppliers and manufacturers whose business,products and services meet the needs of ourdelegates.

The three keynote will cover Power Electronics for Electric Drives –Advancement in technology and itsimplications – A Finnish Perspective by MattiKauhanen, Vice President, Head of Researchand Development, Drives and ControlsBusiness Unit, ABB Group

Power Electronics for hybrid work machines,a real-world case with under two-yearpayback time by Kimmo Rauma, CTO and co-founder of Visedo Oy in Finland

Megatrends affecting frequency converters byTimo_Heikkila, Vice President, Research andDevelopment, Vacon Plc

The conference aims to inspire excellence inpower electronics through personal andprofessional development. The Exhibition willhelp the delegate to achieve this by providingopportunities to enhance knowledge andunderstanding of what is new in the field, toexplore new ideas, products and services in thefield, to learn about new technologies, tools,techniques that enable to develop new skillsand unlock potential for professional growthand new perspectives into work and careerdevelopment, and – last but not least – towiden professional networks.“Our aim at the EPE’14-ECCE event is to

create a different experience. We dedicate ourtime to ensure our delegates will by impressedby the magnificent atmosphere of a qualityevent and by the beautiful surroundings of theconference venue, Lappeenranta and itsuniversity, a place that will showcase the future

of power electronics. The conference programwill keep you on track by day. The technicalprogram will give you the opportunity toexplore the industrial environment ofLappeenranta. A pre-conference programinvites you to join us at the event after firsthaving experienced the bright nights ofLapland. And of course, once in Lappeenranta,St. Petersburg next door is a must-visit. A tourto Russia’s second largest city is made possiblefor you in a post-conference program. In St.Petersburg, an attempt to replicate Franklin’sexperiment killed Professor Georg WilhelmRichmann, and Priestley quoted this in 1767: Itis not given to every electrician to die in soglorious a manner as the justly enviedRichmann”, Pyrhönen underlines.

Power Electronics Conference in Lapland

To receive your own copy of

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subscribe today at:

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EPE 2014_0414_Layout 1 29/07/2014 09:13

POWER ELECTRONICS RESEARCH 11


With the help of the semiconductor gallium nitride(GaN), considerable energy savings in electronicsystems can be achieved. Due to its physicalproperties, power electronics systems based onGaN can be operated more efficiently and lowercooling efforts, than conventional Silicon devices.Under the project management of the FraunhoferInstitute for Applied Solid State Physics IAF, a groupof scientists is now developing a new generationof voltage converters.Applying novel technologies, the German

research and development project “Future efficientenergy conversion with gallium-nitride-basedpower electronics for the next generation(ZuGaNG)” aims at the realization of a newproduct generation for power electronics. In thescope of the project, scientists from an associationof industry and research partners develop highvoltage GaN transistors for applications in voltageconverters. The project is funded by the GermanFederal Ministry for Education and Research(BMBF) with approximately 4 million Euros overthe next three years and is part of the BMBF’sfunding measure “Power electronics for increasedenergy-efficiency – Part 2: Electronics for energy ofthe future”.With the improvement of the applied

technology, the scientists are aiming for both asignificant increase in the energy efficiency ofvoltage converters and a reduction of productioncosts for gallium-nitride-based power transistors ofup to 50 %. Due to their high switching frequency,the transistors reduce losses of voltage convertersand work reliably, even in high temperatures.Physical properties of the semiconductor galliumnitride, such as the high electron mobility andcritical field strength facilitate the realization ofpower transistors with a longer lifetime and higherrobustness in comparison to conventionally usedsilicon devices. “Furthermore, thanks to the high pulse

frequency of our transistors, a miniaturization ofthe systems is possible, as we are able to designalso smaller passive devices”, explains Dr. PatrickWaltereit, project leader at Fraunhofer IAF. “Thisallows reducing the volume of the components,the cooling efforts, as well as the modulesnecessary for the cooling, thus leading to areduction of production as well as operating costs”.Together with their industry and research partners,the scientists at Fraunhofer IAF strive for thedevelopment of novel concepts for design,material production and process technologies forthe production of power electronics components.First demonstrators will soon validate the voltageconverters’ performance in heating, household andmanufacturing technologies, in electro mobility orin the generation of renewable energies. Thepower transistors could help to save energy in

future pump motors of washing machines orheatings, in chargers for electronic vehicles,generators for plasma or laser systems, or in

photovoltaic plants. Besides the construction of demonstrators, the

project partners pursue an embracingcharacterization of the GaN-based transistors, inorder to achieve a comprehensive understandingof the correlations between the production processon the one hand, and structural, electric andthermal properties on the other hand.Furthermore, it is the goal to further optimize thetechnology regarding the robustness and reliabilityof the devices, so that it can finally qualify forindustrial production.

GaN in a CMOS EnvironmentAn approach for a lasting reduction of productioncosts is, among others, an integration of the GaN-based transistors in CMOS production lines. Thiswould allow a cost-efficient volume production. Inthe upcoming years, scientists furthermore want tocombine the special integration potential, the highoutput and the extraordinary functionality of theSilicon-CMOS-technology with the high electricpower density and robustness of componentsbased on gallium nitride. Besides Fraunhofer IAF Robert Bosch GmbH,

TRUMPF Hüttinger GmbH, KACO new energyGmbH, X-FAB Semiconductor Foundries AG,Lewicki microelectronic GmbH, EDC ElectronicDesign Chemnitz GmbH, Fraunhofer Institute forSilicon Technology ISIT, Ferdinand-Braun-Institute,University of Erlangen, University of Reutlingen, aswell as the University of Magdeburg are involved inthe ZuGaNG project.

www.iaf.fraunhofer.de

Gallium Nitride Converters forFuture Energy Systems

Prototyping board for the analysis of the switching properties of GaN-based high-voltage transistorsPhoto: Fraunhofer IAF

Example for GaN-based converter applications -inductively coupled plasma in a quartz glass tube formaterial processing Photo: TRUMPF Group

Research_2014_Layout 1 28/07/2014 11:06

12 POWER ELECTRONICS RESEARCH


A new fast and contactless Defect LuminescenceScanner (DLS) for photoluminescence imaging of4H-SiC epiwafers was developed undercoordination of German Fraunhofer IISB togetherwith Intego GmbH. This DLS system enables amore efficient optimization of the productionprocess of SiC epiwafers as well as an inlinequality control along the device production chain.This will contribute to cost reduction in materialand device production, and helps accelerating thefurther commercialization of SiC power devices.With respect to structural defects, such as

micropipes or other dislocation types, and theirdensities in substrates and epilayers, the materialquality of silicon carbide (4H-SiC) has beenimproved greatly within the last years. But still, theperformance of especially SiC bipolar devices andthe yield of device production may be limited byresidual structural defects in the epiwafers. Suchdefects originate in the substrate material or aregenerated during the epitaxial process like down-fall particles, stacking faults, and dislocations. To date, several characterization methods are

well established for identification and distributionof such defects on the wafer level, but they aredestructive (defect selective etching), cost-intensive (synchrotron x-ray topography), or time-consuming (both defect selective etching and x-raytopography). Hence, they are not suitable for a fastinline quality control of the material preparationand device production.

Half-Hour Scanning Time As a non-destructive, contactless method allowingfor identification of structural defects of 4H-SiC atroom temperature, the photoluminescence (PL)technique is well known. In PL images, structuraldefects appear either as bright or dark items onthe “grey” SiC background as 4H-SiC itself shows alow PL intensity due to its indirect bandgap.However, so far no PL setup exists which is fast

enough for an inline defect analysis on fullwaferscale within a production environment. Thisobstacle has now been overcome in the course of

the “SiC-WinS” project, funded by the BavarianResearch Foundation (BFS). Together with themetrology specialist Intego Vision Systeme GmbH,the new defect luminescence scanner (DLS) wasdesigned and fabricated under coordination ofFraunhofer IISB. The DLS allows for short PLmeasurement cycles and high throughput of SiCepiwafers at a high lateral resolution of 5 µm.The DLS system is installed at Fraunhofer IISB in

Erlangen and consists of a UV laser operating at325 nm wavelength for PL excitation, a samplestage for scanning the SiC epiwafer, and anelectron multiplying charge-coupled device(EMCCD) camera for fast image recording at ahigh signal-to-noise ratio. The high lateralresolution of 5 µm is achieved by a magnifyingobjective lens in front of the camera. Foridentification of defect types by their spectral

fingerprints, different band-pass filters are installed.The DLS system can determine the defect types

and their distribution on SiC epiwafers up to 150mm diameter in less than 30 minutes. A routinefor automated defect identification and counting inorder to predict directly the device yield perepiwafer is currently under development.Fraunhofer IISB performs service measurements

with the new DLS system and identifies thedefects and their distribution on SiC epiwafers onthe full waferscale for epi houses and devicemanufacturers. The Fraunhofer Institute forIntegrated Systems and Device Technology IISBis one of the 67 institutes of the Fraunhofer-

Gesellschaft. It conducts applied research anddevelopment in the fields of power electronics,mechatronics, micro and nanoelectronics. A staff of200 works in contract research for industry and

public authorities. The institute isinternationally acknowledged forits work on power electronicsystems for energy efficiency,hybrid and electric cars and thedevelopment of technology,equipment, and materials fornanoelectronics.

www.iisb.fraunhofer.de/sic,[email protected]

Contactless Inspection of SiC Epiwafers

Operator loading a 100 mm SiC epiwafer in the defect luminescence scanner at Fraunhofer IISB

LEFT: Example for spectralfingerprints of defects in 4H-SiCepiwafers: “panchromatic” image withfull spectral range (left), band-passfilter in blue, green, red ranges

d

Research_2014_Layout 1 28/07/2014 11:07


German Researchers CutEnergy Loss in Half

POWER TO MAKELIFE COOLERWith its best-in-class performance enabling heat lossreduction, the UMOS VIII helps to keep you cool.Also the new DTMOS IV with its compact design delivers

application,Toshiba has the power to make it happen.

UMOS VIII: 30-250V MOSFETs Best in class Ciss* Ron performance DTMOS IV-low loss performance in 600 & 650V class Smallest packaging (SMOS line-up) SiC Diodes Automotive MOSFETs

www.toshiba-components.com/power

Six companies from the semiconductor and solar industries joined forces inthe NEULAND project funded by the Federal Ministry of Education andResearch (BMBF) to explore new technologies for renewable power sources.NEULAND stands for innovative power devices with high energy efficiency andcost effectiveness based on wide bandgap compound semiconductors. Theproject aims to reduce the losses in feeding electricity into the grid, e.g. inphotovoltaic inverters, by as much as 50 percent – without significantlyincreasing system costs. This is to be achieved using semiconductor devicesbased on silicon carbide (SiC) and gallium nitride on silicon (GaN-on-Si). TheNEULAND project will (May 2010- April 2013) was headed by Infineon. Theproject received funding at 52.6 percent to the tune of approximately Euro 4.7million (in total Euro 8.9 million) from the BMBF under the FederalGovernment’s High-Tech Strategy (“Information and CommunicationsTechnology 2020”, ICT 2020 program) as part of the call for proposals on“Power Electronics for Energy Efficiency Enhancement”.

Cutting energy losses The key to reducing energy losses by half is use of the semiconductormaterials silicon carbide (SiC) and gallium nitride on silicon (GaN-on-Si),whose electronic properties enable compact and efficient power electronicscircuits. Today Infineon already uses the material SiC in its JFETs and diodes forthe 600 V to 1700 V voltage class. These power semiconductors are primarilyused in switched-mode power supplies for PCs or televisions and in motor

drives. In the future they may also gain major significance for solar inverters. Infuture, also solar inverters could considerably profit.Before NeuLand, SiC was a very expensive wafer material. Now more SiC

vendors and the number of possible applications has grown. The projectpartners were able to demonstrate that the efficiency of power electronics canbe increased by more than a third using SiC and GaN-based components.Solar inverters for example profit from considerable material savings with nochange in effectiveness, making them even more cost-efficient. However,results also showed that the cost of SiC components will have to drop evenmore for the wide-scale application in solar inverters and that for GaN-basedcomponents further intensive research is required on reliability, service lifetimeand costs.AIXTRON (www.aixtron.com) was represented as an equipment provider

for semiconductor production, while as a wafer manufacturer SiCrystal(www.sicrystal.de) was on board for SiC. The semiconductor manufacturerInfineon (www.infineon.com) researched the power semiconductordevices and the production steps for SiC and GaN-based components,while the system technology expertise in the solar sector was provided bySMA Solar Technology (www.sma.de). With NeuLand the project partnerswere able to further expand their respective proficiencies in future-oriented SiC and GaN technologies along a very wide segment of thevalue creation chain. In the meantime the German GaN partner MicroGaNhas given up its activities.

Research_2014_Layout 1 28/07/2014 11:07

14 POWER ELECTRONICS RESEARCH


Today’s grid has very little ability to precisely control the voltagedelivered to the customer while the voltage at all load points must bewithin certain limits. The voltage regulation is assured so far throughplanning, network design, load estimation and fine tuning throughcapacitor switching and LTC (load tap changer) operation. This will notwork in the future due to distributed PV, electric vehicle charging, andvoltage drop across the leakage reactance of the distributiontransformer. At PCIM Europe Alex D. Huang, head of NSF FREEDMSystems Center at NC State University, sketched the architecture of afuture grid. The level of voltage drop varies with transformer loading level and

load power factor. Utility companies are increasingly demand abilities toprecise control the voltage so energy saving programs can beimplemented. Addressing the voltage issue therefore requires a newgeneration of intelligent device that is close to the customer and canautomatically correct over- and under-voltage issues in real time.Regarding power factor, 1.0 is the ideal case because only real powerpresent on the electrical network. However, modern loads tend to beinductive and residential and industrial load have significant amount ofreactive power consumption. When reactive power is present, thecurrents increase in the wiring and in the devices operating on the

network. This is undesirable because power dissipation is proportionalto the square of the current. How to meet the increased energy demands while not impacting the

climate is another major issue facing the industry. This results in the pushfor more and more renewable and alternative energy integrations intothe grid, mostly at the distribution level. High penetration of distributedgeneration (DG) will cause more problems in voltage and frequencycontrol. An intelligend device or a grid that that can address this problemshould have the ability to control voltage, frequency and power flow, andto integrate and manage different energy sources - effectively making thisa microgrid controller. With visibility to utility via communication network,it can be controlled and managed in an aggregated manner to achieveeven greater benefit to utility when such a solution is widely adopted. Forexample, today’s utility is over designed to support the peak load whichonly happens for less than 10 % of the time while another 10 % of thetime the load is so low that over 50 % asset is idle. This issue can beaddressed by moving towards high penetrations of DGs that aredispatchable. Again, an intelligent device that is not only able to facilitatethe integration of DGs (PV, storage, microturbine, EV etc) but alsoprovides the visibility for utility control and management is indispensable.

Direct Voltage ConversionA future power delivery system (FREEDM System) has been proposed byresearchers including Alex Huang at NC State University which integratesthe advanced power electronics and information technology. Themedium voltage AC distribution grid (12.47 kV) is converted to the lowvoltage AC (120 V) and DC (380 V) system by a solid state transformer(SST). These DC or AC ports deliver AC or DC power to the load andenable the formation of residential AC or DC microgrids (MG). A newclass of circuit breakers called Fault Isolation Device (FID) is used toidentify and isolate the malfunction area when the grid is in abnormalcondition. Due to the software and hardware capability of the SST, plug-and-play of AC and DC MG can be realized to allow the integration of

SiC-Based Transformers for the Future Grid

“The FREEDM system is totally feasible due to the remarkable progress of powerelectronics technology in the last few decades”, Alex Huang stated at PCIM Photo: AS Voltage/frequency capabilities of medium-voltage SiC devices

Research_2014_Layout 1 28/07/2014 11:07 Page 16



distributed renewable energy resources (DRER) and distributed energystorage devices (DESD). The new grid can precisely control all majorpower parameters of the grid: voltage, frequency and power factor ateach port of the SST. This capability is enabled by the high bandwidthpower electronics of the SST. Additional power management capabilitysuch as low voltage ride through (LVRT) can also be achieved by the SST.Under normal operating conditions, aggregated resources connectedthrough the AC and DC MGs are managed by software embedded in theSST to achieve certain energy management objectives such as economicbenefit to the customers.One of the key reasons why Huang believes that the FREEDM system is

totally feasible is due to the remarkable progress of power electronicstechnology in the last few decades. It is well understood that powersemiconductor device technology drives the growth of power electronicsmarket and application field. The capability of power semiconductordevice is frequently measured by the available voltage and currentratings. However, it is important to point out that the switching speed ofthe power device is a much more important parameter for powerelectronics applications. Low voltage Silicon power devices such as IGBTand MOSFET at voltages below 1700 V can switch at a frequency of 10 to100 kHz. This capability has fundamentally changed the way we deliverpower at low voltage levels such as power supplies used in computersand data centers.

15 kV SiC SST High-frequency power conversion is the norm for voltage transformationand power management control. High-frequency power conversion atlow voltage levels (480V AC) is a reality and is the most importantcontribution of power electronics to industry. Power devices based onwider bandgap materials such as SiC and GaN are expected to furtherincrease the applications field of power electronics due to their capabilityof operating at high voltage, high frequency and higher temperature. Formedium voltage power devices (3300V), SiC based power devices offereven greater improvement in the switching speed because Silicon IGBTsand IGCTs are both bipolar devices with very low switching speed. Powerdevices such as SiC MOSTETs, IGBTs and thyristors with breakdownvoltages from 3.3 to 50 kV can be developed to cover a wide range of

applications including the SST. A test device that of a 15 kV SiC powerMOSFET developed by Cree verifies 40 kHz operation. The switchingspeed of these SiC power devices can be increased 60 to 120 timeswhen compared with Silicon bipolar power devices such as Si IGBT orIGCT, Huang expects.This switching speed improvement in medium voltage SiC power

devices will enable a fundamental new capability of power electronics -Direct Medium Voltage Power Conversion; basically repeating the powerelectronics success we had in low voltages systems at medium voltagesusing high frequency power conversion techniques at 10 to 100 kHzrange. This new capability is the basis of the FREEDM system becausethe SST uses the direct medium voltage power conversion concept. Atthe heart of the direct medium voltage power conversion is a mediumvoltage DC/DC converter that uses medium voltage high frequencypower switches such as the 15 kV SiC MOSFET. A comparison of several15 kV devices developed at Cree show, from the conduction point ofview, bipolar devices such as the GTO have the best capability, especiallywhen operating at 125°C or higher. On the other hand, MOSFET showsthe best switching speed or the lowest switching loss. Turn-off loss for15 kV MOSFET is virtually zero, while the turn-off loss for 15 kV p-GTOand IGBT is still significant. For high frequency DC/DC converterapplication, the MOSFET is the preferred device while IGBT and GTO canbe used in lower frequency applications.As an example to demonstrate the SiC power device’s capability, a 20

kVA SST based on 15 kV SiC MOSFET has been designed. Testedefficiency for the medium voltage DC/DC converter stage at half of thedesired voltage (6 kV instead of 12 kV) is around 97.6 %. Additionalimprovement in the high frequency transformer design in the future willdemonstrate DC/DC conversion efficiency at 99 % level. Since a bipolardevice such as the SiC GTO has the best conduction capability, a 15 kVfault Isolation device (FID) based on the 15 kV SiC p-GTO has beendeveloped. Since the SiC p-GTO blocks voltage only in one direction, anAC switch is needed. The AC switch is based on two 15 kV SiC p-GTOdevices and two 15 kV SiC PiN diodes. Such an AC switch, can be used asa single phase solid-state circuit breaker.

www.freedm.nscu.edu

Future DC power delivery system

Research_2014_Layout 1 28/07/2014 11:07 Page 17

16 INDUSTRY NEWS


Many applications require reliableshort-term uninterrupted power inthe event of a main power failure.Supercapacitors provide a simpleand inexpensive source of short-term backup energy. They lackmany of the safety and cycle lifetrade-offs associated with batteries,and provide excellent powerdensity for high current backup.However, supercapacitors sufferfrom lost capacity and increasedESR over time, particularly at highoperating temperatures. Therefore,monitoring capacitor “state ofhealth” in a capacitor-based backupsystem is important for two reasons- to ensure adequate energy andpower handling for proper backup,and to extend capacitor lifetime byminimizing capacitor chargevoltage. Linear Technology Corporation

introduces the LTC3350, asupercapacitor charger and backupcontroller IC that includes all of thefeatures necessary to provide acomplete, standalone capacitor-based backup power solution. Thedevice provides all PowerPath™control, capacitor stack charging andbalancing, and capacitor “health”monitoring to ensure that thebackup system is capable of reliableoperation. The LTC3350 features a wide 4.5

V to 35 V input voltage range and

10 A Supercapacitor Chargerand Backup Controller IC

over 10 A of charge/backup currentcapability. The device also providesbalancing and over-voltageprotection for a series stack of oneto four supercapacitors. TheLTC3350’s synchronous step-downcontroller drives N-channelMOSFETs for constantcurrent/voltage charging of thecapacitor stack at up to 5 V per cell.In backup mode, the step-downconverter runs in reverse as asynchronous step-up DC/DC todeliver power from thesupercapacitor stack to the systemsupply to be backed up. TheLTC3350’s dual ideal diodecontroller uses N-channel MOSFETsfor low loss power paths from theinput and supercapacitors to thebackup system supply. The device issuited for high current 12 V ride-through supplies and short-termuninterruptible power supplies(UPS) for servers, mass storage andhigh availability systems.The LTC3350 contains an

accurate 14-bit analog-to-digitalconverter (ADC), which continuouslymonitors input and output voltageand current. In addition, the internalmeasurement system monitorsparameters associated with thebackup capacitors themselves,including capacitor stack voltage,capacitance and stack ESR(equivalent series resistance) to

ensure adequate energy storage andpower delivery during backup. Bymonitoring the actual capacitance ofthe backup supercapacitors, theLTC3350 provides longer capacitorlife by enabling the system to setthe capacitor voltage to a minimumvalue while ensuring the requiredbackup energy is maintained. Allsystem parameters and fault statuscan be monitored via a two-wire I2Cinterface, and alarm levels can beset to alert the system to a suddenchange in any of these measuredparameters.

Operation PrincipleThe LTC3350 contains a fast power-fail (PF) comparator which switchesthe part from charging to backupmode in the event the input voltage,VIN, falls below an externallyprogrammed threshold voltage. Inbackup mode, the input ideal diode

shuts off and the supercapacitorspower the load either directlythrough the output ideal diode orthrough the synchronous controllerin step-up mode. The PF comparatorthreshold voltage is programmed byan external resistor divider via thePFI pin. The output of the PFcomparator also drives the gate ofan open-drain NMOS transistor toreport the status via the PFO pin.When input power is available thePFO pin is high impedance.When VIN falls below the PF

comparator threshold, PFO is pulleddown to ground. The output of thePF comparator may also be readfrom the chrg_pfo bit in thechrg_status register.If VIN is above an externally

programmable PFI threshold voltage,the synchronous controller operatesin step-down mode and charges astack of supercapacitors. ALinear’s new Backup Power Controller UPS & Supercap Charger/Monitor IC

LTC3350 block diagram

Industry News_Layout 1 28/07/2014 12:03

INDUSTRY NEWS 17


Innovation by Tradition

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FORMERSE FOR TRAN

S – 5 LETTERSFORMER

LOW OHMIC PRECISION AND POWER RESISTORS

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AND OFFER A NUMBER OF ADV SHUNT RESISTORS SASMD

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hone +49 (0) 2771 934-0Pillenburg · D35683 ·

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programmable input current limitensures that the supercapacitors willautomatically be charged at thehighest possible current that theinput can support. If VIN is below thePFI threshold, then the synchronouscontroller will run in reverse as astep-up converter to deliver powerfrom the supercapacitor stack toVOUT.The two ideal diode controllers

drive external MOSFETs to providelow loss power paths from VIN andVCAP to VOUT. The ideal diodes workseamlessly with the bidirectionalcontroller to provide power from thesupercapacitors to VOUT withoutbackdriving VIN.The ideal diodes consist of a

precision amplifier that drives thegates of N-channel MOSFETswhenever the voltage at VOUT isapproximately 30mV (VFWD) belowthe voltage at VIN or VCAP. Within the amplifier’s linear range,

the small-signal resistance of theideal diode will be quite low,keeping the forward drop near 30mV. At higher current levels, theMOSFETs will be in full conduction.The input ideal diode prevents thesupercapacitors from back driving VIN

during backup mode. A Fast-Offcomparator shuts off the N-channelMOSFET if VIN falls 30 mV belowVOUT. The PFI comparator also shutsoff the MOSFET during powerfailure. The output ideal diode alsoprovides a path for thesupercapacitors to power VOUT whenVIN is unavailable. In addition to aFast-Off comparator, the output idealdiode also has a Fast-Oncomparator that turns on theexternal MOSFET when VOUT drops65 mV below VCAP. The output idealdiode will shut off when pin OUTFB

is just above regulation allowing thesynchronous controller to power VOUT

in step-up mode.Charging proceeds at a constant

current until the supercapacitorsreach their maximum charge voltagedetermined by the CAPFB servovoltage pin and the resistor dividerbetween VCAP and CAPFB. Themaximum charge current isdetermined by the value of thesense resistor, RSNSC, used in series

with the inductor. The charge currentloop servos the voltage across thesense resistor to 32 mV. Whencharging begins, an internal soft-startramp will increase the chargecurrent from zero to full current in 2ms. The VCAP voltage and chargecurrent can be read from themeas_vcap and meas_ichrgregisters, respectively.The bidirectional switching

controller acts as a step-up

converter to provide power from thesupercapacitors to VOUT when inputpower is unavailable. The PFIcomparator enables step-up mode.VOUT regulation is set by a resistordivider between VOUT and OUTFB.Step-up mode can be used inconjunction with the output idealdiode. The VOUT regulation voltagecan be set below the capacitor stackvoltage. Upon removal of inputpower, power to VOUT will be


18 INDUSTRY NEWS


provided from the supercapacitorstack via the output ideal diode. VCAP

and VOUT will fall as the load currentdischarges the supercapacitor stack.The output ideal diode will shut off

when the voltage on pin OUTFB fallsbelow 1.3 V and VOUT will fall a PNdiode (~700mV) below VCAP. IfOUTFB falls below 1.2V when theoutput ideal diode shuts off, the

synchronous controller will turn onimmediately. If OUTFB is above 1.2Vwhen the output ideal diode shutsoff, the load current will flow throughthe body diode of the output idealdiode N-channel MOSFET for aperiod of time until OUTFB falls to1.2V. The synchronous controller willregulate OUTFB to 1.2V when itturns on, holding up VOUT while the supercapacitors discharge toground.

The synchronous controller instep-up mode will run non-synchronously when VCAP is less than100 mV below VOUT. It will runsynchronously when VCAP falls 200mV below VOUT.

The device monitors systemvoltages, currents, and dietemperature. A general purposeinput (GPI) pin is provided tomeasure an additional systemparameter or implement athermistor measurement. Inaddition, the capacitance andresistance of the supercapacitorstack can be measured. Thisprovides indication of the health ofthe supercapacitors and, alongwith the VCAP voltagemeasurement, providesinformation on the total energystored and the maximum powerthat can be delivered.

The device operates over a–40°C to 125°C junctiontemperature range and is availablefrom stock. Pricing starts at $5.25each for the E grade in 1,000-piecequantities.

Power MOSFET SelectionTwo external power MOSFETs mustbe selected for the LTC3350’ssynchronous controller: one N-channel MOSFET for the top switchand one N-channel MOSFET for thebottom switch. The selectioncriteria of the external powerMOSFETs include maximum drain-source voltage (VDSS), thresholdvoltage, on-resistance (RDS(ON)),reverse transfer capacitance (CRSS),total gate charge (QG), andmaximum continuous drain current.VDSS of both MOSFETs should beselected to be higher than themaximum input supply voltage(including transient). The peak-to-peak drive levels are set by theDRVCC voltage. Logic-levelthreshold MOSFETs should be usedbecause DRVCC is powered fromeither INTVCC (5V) or an externalLDO whose output voltage must beless than 5.5 V.

www.linear.com/product/LTC3350

Power path block diagram with power available from input pin

One of the typical applications: 4.8 V to 12 V, 10 A supercapacitor charger with 6.4 A input current limit and 5 V, 30 W backup mode


19_PEE_0514_Layout 28/07/2014 10:45 Page 1

20_PEE_0514_Layout 28/07/2014 10:39 Page 1

www.infineon.com/eicedriver IGBT GATE DRIVER 21


Innovative IGBT Driver ICResolves Dilemma of GateResistor SelectionThe use of motor line inductors, dv/dt filters or sine wave filters helps to adapt the variable frequencyinverter with its fast switching IGBT to the motor. This is normally much easier than an individualadaption to the application requirements of the inverter itself by individual selection of gate resistors.However, such a dv/dt filter increases the price, losses and size of a variable speed drive. This articledescribes a smart way to implement an easy-to-use adaption by means of an intelligent selection of anIGBT gate driver IC combining both, lower EMI and higher efficiency. Dr. Wolfgang Frank, InfineonTechnologies AG, Germany

The operation of modern variablefrequency inverters with pulse widthmodulation techniques results in a lot ofnegative side effects to motor driveapplications. These side effects are e.g.degradation of the winding insulation inboth non-potted windings and especially inpotted ones, inverter operation withshielded cables [1], and motor bearingdegradation. Especially voltage reflectionsat the motor clamps show a voltagedoubling effect which, according to Figure1, can already be measured after a fewmeters of cable length. Since this doublingeffect occurs at every turn-on of the IGBT,the winding insulation degrades over timeand reduces the lifetime of the motor as aconsequence.A simple countermeasure is to use

dv/dt filters. However, the implementationof such filters leads to losses [2], whichcan be considerable especially in the lowermotor power ranges. This has a negativeimpact on the efficiency of variable speeddrives. Investigations already showed thatthe cost for filters or othercountermeasures to limit the dv/dt areexpensive [3] compared to the cost of thedrive. The filters consist of inductors,capacitors and resistors. Therefore, theinductors have a reactive voltage drop,which reduces the motor voltage. Thefilters are also usually a limiting factor forthe switching frequency of the inverter. Aswitching frequency up to 16 kHz isdifficult for most dv/dt filters and also a

derating of the filter must be considered interms of motor current frequency andtemperature.

Dilemma of gate resistor selection forturn-onThe proper selection of the turn-on gateresistor contributes significantly to the EMIcharacteristic of a frequency inverter.Because of the excellent switchingbehaviour of modern IGBTs, designengineers want to make use of their fastswitching capabilities. On the other hand,power diodes show the tendency to tearoff the current, when a relatively low diodeforward current commutates to an IGBT.The results are strong, high-frequencyoscillations as given in a) of Figure 2 aswell as a high dv/dt. These oscillationsmay even damage the diode or IGBT.Therefore, some IGBTs have integratedgate resistors which prevent damage, but

not oscillations.The high-frequency portion of the

collector current is certainly influencing theconducted EMI spectrum. This is visible ina range, where the line filter is not activeany more. Therefore, the oscillations mustbe avoided in any case.The second picture b) of Figure 2

depicts the commutation of the sameforward current when using a turn-on gateresistor of 1.5 instead of 0 in themeasurement of a) in Figure 2. This smalldifference in the gate resistance has alarge influence on the switching behavior.All oscillations vanish and the turn-on isstable.In order to prevent EMI hardware

engineers typically select a higher gateresistance. However, as a disadvantage ahigher gate resistor slows down the turn-on speed of the IGBT at higher collectorcurrents. The turn-on behavior at collector

Figure 1: Motor per unit over-voltage as afunction of the cable length and rise time of

power transistors [2]

Infineon (9)_Layout 1 28/07/2014 11:40

22 IGBT GATE DRIVER www.infineon.com/eicedriver


current levels above e.g. 15 % to 20 % ofthe nominal current is not tending tooscillate any more. Fewer losses will beachieved, if a lower gate resistor is used in

the operating area above.The dilemma described can be resolved

with the new gate driver IC EiceDRIVER™1EDS20I12SV. It can softly turn-on the

IGBT when it is operating at low collectorcurrent levels and it can also quickly turn-on at high collector current levels. This ismade possible by a user controlled currentsource providing 11 different levels. Theselevels can be selected by the systemcontrol pulse-by-pulse in real-time.

Gate current control IC during turn-onprocessThe most innovative feature of the newEiceDRIVER is its gate current controlfunction. It divides the turn-on process intothree sections according to a) in Figure 3:The first section (t0 to t1) is the chargingfrom a negative voltage to a defined valuein the range of VGE = 0. This section iscalled the pre-boost section and lasts for afixed duration of tPRB = 135 ns. Thepreboost current level IPRB during this phaseis adjustable for each individual IGBT type.The second section (t1 to t3) is the turn-oncontrol section. The instantaneous constantgate drive current Igg can be adjusted within11 different values. The IGBT gate voltagepasses the Miller voltage level during thistime. The practical application of the deviceproposes usually a smaller turn-on gatecurrent Igg compared to the preboostcurrent IPRB. Nevertheless, it is also possibleto achieve even larger turn-on currents Iggthan the preboost current IPRB. This isshown in b) of Figure 3. Finally, the gatecapacitance of the IGBT is fully chargedcorrelating to the desired gate voltage levelin section 3 (t > t3).

The used gate driver IC is able to controlthe dvCE/dt transient of the IGBT byselecting a suitable current level duringsection 2. The turn-on delay time td(on) isconstant and predictable. This has aneffect on the design of the IGBT dead timeand the motor current control loop,offering additional potential forimprovement.

The IC controls the gate current bymeans of a closed loop with the controlledcurrent source circuit, which consists of ap-channel MOSFET and a current senseresistor. The current source is extremelyprecise with a tolerance of ± 10 % during

Figure 2: Commutation of low currents at 10 % of nominal current level (a: RGon = 0, b: RGon = 1.5;VDC = 600V; IC = 60A; -15V < VGE < 15V) with collector-emitter voltage (blue), collector current (red) andgate-emitter voltage (green) with a standard gate driver

Figure 2b

Figure 3: The three phases of a turn-on process with (a) theoretical waveforms for gate current (blue) and voltage (green) and (b) example of measuredwaveforms of gate current for speed levels 1-11

Figure 3bFigure 3a

Figure 2a

Infineon (9)_Layout 1 28/07/2014 11:40

www.infineon.com/eicedriver IGBT GATE DRIVER 23


the turn-on phase. This solution is morecost efficient than a similar setup usingbipolar transistors. Additionally, the p-channel MOSFET provides a rail-to-railcapability, which is not possible withbipolar transistors. The Driver IC cancontrol in total up to three p-channelMOSFETs (BSD314SPE) in parallel, whichcovers a range of current classes of up to900 A of 1200 V modules.

Effect of gate current control IC ontransient collector-emitter voltage atturn-onThe adjustability of the controlled gatecurrent of the EiceDRIVER 1EDS20I12SVallows the design engineer to changeparadigms concerning the switching speedof the diode. An excellent EMI at low loadcondition of a frequency inverter can nowbe combined with a high efficiency at highload conditions, which is given in Figure 4.Another advantage is the turn-onpropagation delay, which is morepredictable compared to a pure resistiveturn-on.The standard gate driver uses the gate

resistor value of the module datasheet.This is 1.5 Ω for FF600R12ME4 fromInfineon Technologies. The selected 1.5 Ωleads to a turn-on energy of Eon = 24.5 mJat 50% of nominal current. On the otherside the 1EDS20I12SV shows similarswitching behavior at low currents. Theturn-on energy as well as the turn-onvoltage transient dvCE/dt are almost thesame. The tremendous advantage isvisible at high currents. A smaller turn-onenergy of Eon = 15.5 mJ is achieved. Thisvalue is 40 % lower than the turn-onenergy of the standard gate driver. Thus,the usage of the new gate driver IC resultsin a considerable improvement of theoverall efficiency.The example of a gate driver design was

developed to investigate more detailed therelation of the various speed levels of theEiceDRIVER as a function of the collectorcurrent. Since the gate current control loopallows for several degrees of freedom,there are even greater advantages for1EDS20I12 possible. The bottom part of Figure 5 shows the

range of dvCE/dt rate over various speedsettings and collector amplitudes. It can beseen, that the control range of the gatecurrent control IC is sufficient to cover thesame range as with a common fixed gateresistor control, while enabling theadvantage to change the dvCE/dt ratepulse-by-pulse during operation. For thisreason the commutation speed is notlimited to a single curve. In fact, it can nowcover even a full area of possible dvCE/dtvalues. The dvCE/dt area can be above orbelow the “nominal” dvCE/dt line which is

Figure 4: Large advantage of more than 40% with 1EDS0I12SV regarding turn-on energy compared tostandard gate driver in a gate driver design example showing the collector-emitter voltage (blue), thecollector current (red), and the gate-emitter voltage (green)

Figure 5: Example of dvCE/dt range (bottom) and turn-on energy Eon of 1EDS-SRC gate current controlIC for speed level 1, 3, 5, 7, 9 and 11 compare to standard driver at IGBT junction temperature of 25°C

Infineon (9)_Layout 1 28/07/2014 11:40

24 IGBT GATE DRIVER www.infineon.com/eicedriver


achieved with the nominal gate resistor of1.5 Ω. Figure 5 proves that it is nowpossible to stay below the critical values ofdvCE/dt in the application by setting thecommutation speed according to theinstantaneous electrical conditions of theapplication.

Figure 6 shows the improvedcalculated power loss of an EconoDUAL3type FF600R07ME4 when using theEiceDRIVER 1EDS20I12SV only with level5 for currents below 100 A peak andwith level 11 for the instantaneouscurrents above 100 A peak according toFigure 5.

It can easily be seen that the slew rate

control EiceDRIVER IC can gainapproximately 10 % - 15 % more currentusing the same module compared with astandard driver circuit. The IC1EDS20I12SV can therefore help to lowersystem cost by reducing e.g. the heatsinksize. Aiming at higher power density, thenew driver IC is obviously also supportingthis goal.

ConclusionThis paper discusses the advantages of anovel and innovative EiceDRIVER™1EDS20I12SV gate current control IC,which uses a closed loop gate currentcontrol for turn-on. The advantages

compared to dv/dt or sine wave filters arediscussed. The turn-on properties can beadjusted pulse-by-pulse in real-time duringoperation of the application. It is shown bya switching test example, that the gatedriver IC can control a wide range ofcollector-emitter transient voltage dvCE/dt.In the discussed example, values from 1.5kV/µs up to 6 kV/µs at small collectorcurrents are achieved, which is superiorover only 1 trade-off line when using acommon gate resistor control. This helps toreduce the size of motor and EMI filters oreven makes them superfluous. With this,system costs are significantly reduced,while at the same time system efficiency isincreased.

The calculation of inverter losses showsan extension of output current byapproximately 10 % - 15 % when usingthe EiceDRIVER™ 1EDS20I12SV. Thisadvantage can be used to increase theoutput power of an inverter as well asimproving the power density of theapplication.

Literature[1] J.O. Krah, et al.: „Besonders

energieeffizienter, motorintegrierterUmrichter mit SiC-MOSFETs”;Proceedings of SPS/drives/IPCconference, Nuremberg, Germany, 2013

[2] MTE corporation: „dV-dT FilterSelection Brochure DV-PSL-E”; MTECorporation, USA, 2012

[3] Gambica: „Variable speed drivesand motors”; Technical report No.1, 3rdedition, GAMBICA Association Limited,London, Great Britain, 2006

Figure 6: Calculated power losses per phase show a gain of 10 % - 15 % in respect to output current with slew rate control (blue) over a standard driver (red) (VDC = 600 V, -8 V < VGE < 15 V, fP = 15 kHz)

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Fast Thyristors for InductionHeating SolutionsInduction heating is one of the key metal industry applications using high-power resonant converters.The power range of such converters goes up to 10 MW and there is no more efficient alternative asswitching device than the bipolar fast thyristor. ABB provides for years fast switching thyristors andfurther expands its portfolio for high-power resonant inverters. Ladislav Radvan, ABB s.r.o. –Semiconductors, Switzerland

Induction heating is based on three basiceffects: electromagnetic induction, skineffect and heat transfer. Electromagneticinduction was first discovered by MichaelFaraday in 1831. An electrically conductingobject (usually a metal) can be heatedwhen placed in an inductor that is part of aresonant circuit. An alternating currentflowing through the inductor’s coilgenerates an oscillating magnetic field. Thisin turn induces Eddy currents (also calledFoucault currents) in the object which, bymeans of resistive (Joule) heating, heats upthe object. According to Lentz’s law thedirection of the inductive current isopposite that current that generated themagnetic field which induced the inductivecurrent.

In addition to this, the high frequencyused in induction heating applications givesrise to a phenomenon called skin effect.This skin effect forces the alternatingcurrent to flow in a thin layer close to thesurface of the object. The effectiveresistance of the object is increased whichgreatly increases the heating effect. As theskin effect is frequency dependent, thefrequency can be used to specify theheating depth. Although the heating due toEddy currents is desirable in this

application, it is interesting to note thattransformer manufacturers need to avoidthis phenomenon in their transformers.Laminated transformer cores, powderediron cores and ferrites are all used toprevent Eddy currents from flowing insidetransformer cores.

The effects described above renderinduction heating many advantagescompared to other heating methods.Induction heating is cost effective due tothe lower energy consumption. Heat isgenerated directly in the heated objectwithout any interfaces. Heating iscontactless and therefore very clean.Induction heating is a fast process offeringimproved productivity with higher volumes.The heating energy can be easily andprecisely regulated and the whole object orjust parts of it can be heated by frequencyadjustments. Figure 1 shows the typicalconverter power requirements andoperating frequency as a function ofinduction heating furnace capacities.

Switching Techniques for ResonantInvertersThe most efficient way to feed inductioncoils with an alternating current is byintegrating it into a resonant circuit, forming

a resonant inverter.Generally, semiconductor switches are

operated in the hard-switching mode invarious types of pulse width modulated(PWM) DC/DC converter and DC/ACinverter topologies. One disadvantage ofPWM schemes is that the exact time atwhich the power is switched on or off isgiven and cannot be controlled andoptimized to reduce losses.

A way to improve the efficiency of powerinverters is to reduce the switching losses.One big advantage of resonant invertertopologies is that they make use of soft-switching techniques which allow tominimize switching losses. There are twodifferent modes at which active switches astransistors are operated, depending on thedevice type.

Zero Voltage Switching (ZVS) techniquemeans that the transistor is switching at themoment when the voltage is close to zero.This method eliminates turn-on lossescaused by parasitic capacitance CGate-Source

and is often used for MOSFETs. Zero Current Switch (ZCS) is the more

preferred method for IGBT modules andeven necessary when using fast thyristors(circuit commutation). This techniquereduces turn-off losses as the currentdoes not flow through the device beforeor at the moment of switching and thetail current – typical for bipolar devices –is eliminated. Benefits of soft switchingtechniques are not only the lossreduction and highly efficient energyconversion, but also the limitation ofelectro-magnetic interference (EMI) (lessdi/dt and dv/dt is generated in theswitching process).

Circuit Topologies for ResonantInvertersFigure 2 depicts a quite popular topology:the voltage source inverter (VSI) in the ZVSmode using a medium frequency (10 – 25kHz) IGBT switch. The LCL resonant tankallows to easily adapt to variable loadswithout the need for a transformer. R1

Figure 1: Typical converter power and operating frequency as a function of induction heating furnace capacities

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26 POWER SEMICONDUCTORS www.abb.com/semiconductors


represents the heated object. Typicalapplications applying such circuits aresurface hardening, bending or welding.ABB offers a wide range of IGBT modulesin different industrial standard housings andtopologies for this application.Induction melting systems in the 10 MW

range traditionally and exclusively usecurrent source inverters with fast switchingthyristors in presspack housings. Afrequently used circuit topology is shown inFigure 3, with a standard input 3-phasecontrolled (or uncontrolled) rectifier, a bigserial inductance and an H-bridge in theinverter part. The LF choke is for currentstabilization and filtering purposes. A controlunit must enable a capacitive phase shiftbetween the inverter output current Id andthe resonant load voltage VCr (basicoperation condition necessary for thethyristor recover process). Only the positive half-wave of the AC

voltage is applied to the thyristors, after theminimal turn-off time has elapsed. Lr at thesame time enables the commutationprocess of Tx. The inverter output current idhas a rectangular shape changing itspolarity by activating T1/T4 or T2/T3(diagonally). The energy is thus periodicallypumped into the parallel resonant circuitand the inverter output voltage Vcr has asine waveform at the resonance frequencyand di/dt is limited by the parasiticinductance L and by the voltage Vd. Higheroutput power converters need higher

power thyristors or usually use severaldiscrete thyristors connected in series.

Device FeaturesABB Semiconductors offers a wide range offast thyristors with a total of 21 differenttypes, optimized for different operationfrequencies. The fast thyristor portfolio

comprises standard fast thyristors (up to 1kHz) and medium frequency thyristors (upto 10 kHz). Common to all fast thyristorsare amplifiying & distributed gate structure carrier lifetime control technology optimized carrier concentration profile formaximum current rating

special cathode-gate design for faster on-state current spreading and effectiveoperation in the specified frequency range.All thyristors feature the alloyed

technology where the Silicon wafer isdirectly alloyed to the molybdenum discwhich renders the device more robustagainst surge and peak powers generatedat occasional hard-switching conditions.Moreover, the alloyed molybdenum dischelps to stabilize the junction temperatureand acts as an energy buffer.The latest product is the 2 kV fast

thyristor based on a 3-inch Silicon wafer. Itis offered in two options: the 5STF28H2060 and the 5STF 23H2040. The firstone has an average on-state current ITAV of2.8 kA and a turn-off time tq of 60 µs. Thelatter has an average ITAV of 2.3 kA and a tqof 40 µs. These thyristors feature a veryefficient cathode area usage. Figure 4shows how the current spreads in thecathode during turn-on. Thanks to themassively distributed gate structure over allthe whole cathode area the turn-on lossesare nearly eliminated. The central auxiliarythyristor serves as a gate signal for thedistributed gate electrode of the mainthyristor. The large cathode area around thedistributed gate is immediately activatedand switching losses are efficiently reduced.

Figure 2: Voltage source inverter with inductive coupling (ZVS mode) and parallel resonant circuit

Figure 3: Current source inverter (ZCS mode) and parallel resonant circuit

ABOVE Figure 4: On-state carrierspreading duringthyristor switching

RIGHT Figure 5:Waveforms related to

the three carrierspreading stages of

Figure 4

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Figure 5 shows thw waveforms duringthyristor turn-on (600 A/µs) and calculatedpower loss (arrows below relate to Figure4), Tj = Tjmax.

Further design features implemented inthese two new fast thyristors are minority carrier life-time reduction cathode shunt network to protect thethyristor against parasitic turn-on at highdv/dt

concentration profile optimization toachieve low on-state losses.Figure 6 shows thyristor turn-off and

blocking voltage measurement curves atdifferent turn-off times tq. Parasitic turn-onoccurs at turn-off times equal or below 21µs, which is well below the specified valueof 60 µs, thus demonstrating a gooddatasheet value margin. State-of-the-art fastthyristors feature an optimal balancebetween fast spreading of the carrierdistribution over the whole cathode area atturn-on and a thyristor immunity againsthigh dv/dt. In the event of an appliedblocking voltage the remaining charge in thedevice as well as the additional capacitivecurrent must be extracted by the shuntnetwork and must not act as an internal orfalse gate signal. Such a current amplitudeat high dv/dt can be as high as several tensof amperes. The high power resonant

inverter is exactly the type of system wherethe inverter requirement naturally meets thefast thyristors’ properties.

Application ExamplesIt has been proven for years that the heavymetal industry relies on the reliability andperformance of fast thyristors. And as inmany other market segments also in theheavy metal industry there is a generaltrend towards increased power and powerdensity, higher efficiency and productivity.Fast thyristors are one of the key enablersto follow these trends. The most powerfulapplications are melting and pouring in the

heavy metal industry with furnacecapacities of up to 50 tons and inverterpowers of up to 50 MW.

Some applications in the mediumpower range are surface hardening orquenching for the production ofcogwheels, arbors, valves, rails, etc. Furtherexamples are preheating for materialforming or before welding, inductionwelding, stress revealing after welding,steel tempering or annealing. Alsoinduction bending (800 kW level) to shapebig tubes for power plants or “I-shape“steal support forming are frequentapplications.

Figure 6: Turn-offand blockingvoltagemeasurementcurves atdifferent turn-offtimes, 500 V/µs,Tj= Tjmax

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28 IGBT DRIVERS www.murata-ps.com


Powering IGBT Gate Driveswith DC/DC ConvertersIGBTs can now be found in high power devices with effective gate capacitances measured in hundreds ofnanofarads. Although this capacitance has simply to be charged and discharged to turn the IGBT on and off,the circulating current to do so causes significant power dissipation in voltage drops in the gate driver circuitand within the IGBT. An emerging trend is to use a DC/DC converter to provide optimum power rails fordriving IGBTs .Paul Lee – Director of Business Development, Murata Power Solutions, UK

At high power, inverters or converterstypically use ‘bridge’ configurations togenerate line-frequency AC or to providebi-directional PWM drive to motors,transformers or other loads. Bridge circuitsinclude IGBTs whose emitters areswitching nodes at high voltage and highfrequency so the gate drive PWM signaland associated drive power rails, which usethe emitter as a reference, have to be‘floating’ with respect to system ground, socalled ‘high side’ drives. Additionalrequirements are that the drive circuitshould be immune to the high ‘dV/dt’ ofthe switch node and have a very lowcoupling capacitance. An emerging trend isto use a DC/DC converter to provideoptimum power rails for these ‘floating’drive circuits using an IGBT.

Typical ExampleAn initial consideration is to set the onand off-state gate voltages. For example,a typical IGBT is the FZ400R12KE4 fromInfineon. It has a minimum turn-on

threshold of 5.2 V at 25°C, in practice toensure full saturation and rated collectorcurrent of 400 A, at least 10 V must beapplied. The part has a maximum gatevoltage of ± 20 V so +15 V is a goodvalue with some margin. Higher valuesproduce unnecessary dissipation in thegate drive circuit. For the off-state, 0 Von the gate can be adequate. However,a negative voltage typically between -5and -10 V enables rapid switchingcontrolled by a gate resistor. Aconsideration also is that any emitterinductance between the IGBT and thedriver reference, (point x in Figure 1),causes an opposing gate-emitter voltagewhen the IGBT is turning off. While theinductance may be small, just 5 nHwould produce 5 V at a di/dt of 1000A/µs which is not unusual. Thisinductance of 5 nH is just a fewmillimeters of wired connection (theFZ400R12KE4 has a stray packageinductance of 16 nH). An appropriatenegative drive ensures that the gate-

emitter off-voltage is always zero or less.A negative gate drive also helps to

overcome the effect of collector-gate‘Miller’ capacitance on device turn-offwhich works to inject current into the gatedrive circuit. When an IGBT is driven off,the collector-gate voltage rises and currentflows through the Miller capacitance ofvalue Cm. dVce/dt into the gate emittercapacitance Cge and through the gateresistor to the driver circuit, see Figure 2.The resulting voltage Vge on the gate canbe sufficient to turn the IGBT on again withpossible shoot-through and damage.Driving the gate to a negative voltagemitigates this effect. A DC/DC converter with +15/-9V

outputs conveniently provides theoptimum voltages for the gate driver.The gate of an IGBT must be charged

and discharged through Rg in eachswitching cycle. If the IGBT data sheetprovides a gate charge curve then therelationship is P = Qg x F xVs where P isgate drive power, Qg is data sheet chargefor a chosen gate voltage swing, positive tonegative, of value Vs.If the data sheet does not provide a

charge curve but just a Qg value at specificgate voltages, the value of Qg at other gatevoltage swings can be approximated bymultiplying by the ratio of the actual versusdata sheet voltage swings. For example theFZ400R12KE4 has a Qg value of 3.7 µCwith ±15 V gate voltage swing (30 V total).For a swing of +15/-9 V (24 V total) gatecharge approximates to Qg = 3.7e-6 x24/30 ≈ 3 µC. At 10 kHz this requires gatedrive power of Pg = 3e-6 x 10e3 x 24 ≈ 0.72 W.With derating and allowing for other

incidental losses, a 2 W DC/DC converterwould be suitable. In our example, with 24V total gate voltage swing, the charge anddischarge energy must be the same ineach cycle, so the average charge anddischarge current must be the same, at 30mA given by Pg/Vs. The peak current Ipk,required to charge and discharge the gate

Figure 1: Switch-off with strayinductance L,negative di/dtproduces anegative voltageon the emitter,opposing theturn-off voltage

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www.murata-ps.com IGBT DRIVERS 29


is a function of Vs, gate resistance of theIGBT Rint and external resistance Rg. Thus Ipk= Vs / (Rint + Rg).The FZ400R12KE4 has Rint = 1.9 Ω so

with a typical external resistor of 2 Ω and aswing of 24 V, a peak current of over 6 Aresults. This peak current must be suppliedby ‘bulk’ capacitors on the driver supplyrails as the DC/DC converter is unlikely tohave sufficient value of output capacitorsto supply this current without significant‘droop’. Of course the gate driver itselfmust be rated for these peak currentvalues as must the gate resistors. For ourexample, total gate drive energy E percycle is given by E = Qg x Vs = 72 µJ. The bulk capacitors on the +15 and -9 V

rails supply this energy in proportion totheir voltages so the +15 V rail supplies 45µJ. If we assume that the bulk capacitor onthe +15 V rail should not drop more thansay 0.5 V each cycle then we can calculateminimum capacitance C by equating theenergy supplied with the differencebetween the capacitor energies at its startand finish voltages, that is 45 µJ = 1⁄2 C(Vinit2 – Vfinal2) and C = (45e-6 x 2)/(152 –14.52) ≈ 6.1 µF.Although the -9 V rail supplies about a

third of the energy, it requires the samecapacitor value for 0.5 V drop as this is alarger percentage of the initial value.

Converter ConsiderationsIt is advisable to place the IGBT driver andits DC/DC converter (Figure 3) as close aspossible to the IGBT to minimize noisepick up and volt drops. This places thecomponents in a potentially hightemperature environment where reliabilityand lifetime reduces. DC/DC convertersshould be chosen with appropriate ratingsand without internal components thatsuffer significantly with temperature suchas electrolytic capacitors and opto-couplers. Data sheet MTTF values willtypically be quoted at 25 or 40°C andshould be extrapolated for actual operatingtemperatures. The absolute values of gate drive

voltages are not very critical as long as theyare above the minimum, comfortablybelow breakdown levels and dissipation isacceptable. The DC/DC converterssupplying the drive power therefore maybe unregulated types if the input to theDC/DCs is nominally constant. Unlike mostapplications for DC/DCs however, the load

is quite constant when the IGBT isswitching at any duty cycle. Alternativelythe load is close to zero when the IGBT isnot switching. Simple DC/DCs often needa minimum load otherwise their outputvoltages can dramatically increase, possiblyup to the gate breakdown level. This highvoltage is stored on the positive bulkcapacitor so that when the IGBT starts toswitch, it could see a gate over-voltageuntil the level drops under normal load. ADC/DC should be chosen therefore thathas clamped output voltages or zerominimum load requirements.IGBTs should not be actively driven by

PWM signals until the drive circuit voltagerails are at correct values. However, as gatedrive DC/DCs are powered up or down, atransient condition might exist where IGBTscould be driven on, even with the PWMsignal inactive, leading to shoot-throughand damage. The DC/DC should thereforebe well behaved with short and monotonicrise and fall times. A primary referencedon-off control can enable sequencing ofpower-up of the DC/DCs in a bridgereducing the risk of shoot-through.

Driving High-Speed Devices DC/DCs for ‘high side’ IGBT drives see theswitched ‘DC-link’ voltage across theirbarrier. This voltage can be kilovolts withvery fast switching edges from 10 kV/µsupwards. Latest GaN devices may switch at100 kV/µs or more. This high ‘dV/dt’causes displacement current through thecapacitance of the DC/DC isolation barrierof value I = C x dV/dt.So for just 20 pF and 10 kV/µs, 200 mA

is induced. This current finds anindeterminate return route through thecontroller circuitry back to the bridgecausing voltage spikes across connectionresistances and inductances potentiallydisrupting operation of the controller andthe DC/DC converter itself. Low couplingcapacitance is therefore desirable, ideallyless than 15 pF.When the IGBT driver is powered by an

isolated DC/DC converter, the barrier inthe converter will be expected to withstandthe switched voltage applied to the IGBTswhich may be kilovolts at tens of kHz.Because the voltage is switched, the barrierwill degrade over time faster than with justDC by electrochemical and partialdischarge effects in the barrier material.The DC/DC converter must therefore haverobust insulation and generous creepageand clearance distances. If the converterbarrier also forms part of a safety isolationsystem, the relevant agency regulationsapply for the level of isolation required(basic, supplementary, reinforced),operating voltage, pollution degree, over-voltage category and altitude.

Figure 2: Current through ‘Miller’ capacitance Cm works to turn on the IGBT

Figure 3. Typical2 W IGBT driverDC/DCconverter, theMGJ2 fromMurata PowerSolutions

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30 700-V FLYBACK REGULATOR www.ti.com/product/ucc28910


High-Voltage SwitcherAchieves 5 Percent CurrentRegulation AccuracyIn chargers it is often necessary to adjust the output current in addition to the output voltage. In recentyears primary side regulation (PSR) methods without optical coupler are gaining popularity. Such methodspose challenges on the accuracy that we can obtain because of the indirect sensing of the output currentand voltage. The UCC28910 is the first TI high-voltage switcher that achieves output current regulationaccuracy within 5% – without external components. Rosario Davide Stracquadaini, System Engineer,Texas Instruments, Catania, Italy

The UCC28910 is the first TIhigh-voltage switcher that incorporates acontroller. This 700-V Power FET has a 700V current source for start-up and isdedicated to off-line isolated flyback powerconverters. It uses primary-side regulationand senses all the needed quantities toperform output voltage and currentregulation, from auxiliary winding, withoutthe need for an optical coupler.

Operation principleThe device’s working mode is forced intodiscontinuous conduction mode (DCM)with valley-switching to reduce switchinglosses. Figure 1 shows a typical offlineconverter schematic where a minimalcomponent count is visible.The output voltage is sensed sampling

the transformer auxiliary winding voltagethrough pin VS. The device’s internalcircuitry can detect when the ringingamplitude on the auxiliary waveform goesbelow an acceptable value and closes thesampler switch. The ringing here is the

ringing that follows resetting of the leakageinductance. The same circuitry also cansense the knee of the auxiliary waveformat the end of the demagnetization timewhen the sampler switch is closed.The sampled value of the auxiliary

winding waveform gives information aboutthe output voltage level, which is usedwhen the converter regulates the outputvoltage. The length of the transformerdemagnetization time is used when theconverter regulates the output current.The output-current regulation level on this

switcher is established by setting the peakvalue of the primary current and thetransformer turn ratio according to equation 1;

(1)

where NPS is the transformer primary tothe secondary turn ratio; IPK is the primarypeak current which is equal to theUCC28910 internal MOSFET peak current;TDEMAG is the transformer demagnetizationtime; fSW is the switching frequency that is

modulated to keep constant the productFSW.TDEMAG The peak value of the internalMOSFET is set selecting the value of theresistance connected between the device’sIPK and GND pins.Because of the MOSFET switch-off delay

(td in Figure 3 and in equation 2), theprimary peak current depends on theslope of the primary current (SIP) inequation 2:

(2)

Here the slope of the current dependson the converter’s input voltage (VIN) andthe value of the transformer’s primaryinductance (LP). As the input voltagechanges, the primary peak current alsochanges. According to equation 1 theoutput current also changes.The previous consideration states that

the output current regulation level will notbe accurate, if the effect of the switch-offdelay is not properly compensated.In state-of-the-art ICs dedicated to this

Figure 1: A typicalapplication schematicfor the UCC28910switcher

#

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www.ti.com/product/ucc28910 700-V FLYBACK REGULATOR 31


kind of converter, this compensation isperformed sensing the input voltage andadjusting the pulse-width modulation(PWM) comparator level, or the switchingfrequency according to the sensed inputvoltage value. In doing so, the inductancevoltage spread is not compensated. Youmay need additional components to sensethe converter input voltage. At a minimum,you will need to tune one or more externalcomponents to adjust the compensationamount to obtain almost constant outputcurrent on the entire input voltage range.The UCC28910 uses a fully integrated

proprietary, solution to compensate for theconverter’s input voltage and primaryinductance variations, achieving accuracywithin ±5% in output-current regulation.The solution compensates the IPKvariation adjusting the switching frequencyto satisfy equation 3:

(3)

Here IPK is the primary peak current;fSW_adj is the value of the switchingfrequency after compensation;

IPK_TARGET is the target value of theprimary peak current that is the value ofthe primary peak current, if td is zero (seeFigure 3). With this device, equation 1becomes equation 4:

(4)

The peak-current variation caused by theprimary inductance spread, and by the

input voltage variation, is almost perfectlycompensated by the UCC28910 internalcircuitry. It is mandatory to say “almost”because the compensation method isbased on equation 2, which supposes thatthe primary current is a perfectly triangularwaveform. Looking at the top of thewaveform in Figure 3 we see that the peakof the current is rounded. This implies anamount of error in respect to equation 4.The device takes this error into account,even if it cannot compensate for it 100 %.What is important is that all the necessaryquantities that this device needs to senseare internal to the device. This means thatthere is no need for additional externalcomponents. Moreover, there is no needto tune the amount of compensationbecause it is already exactly what it needsto be. Ultimately, the user just need to setup the output current value by setting thetransformer turn ratio and the MOSFETpeak-current value.Figure 4 shows the results of experimental

tests performed on a demo-board with inputvoltages ranging from 88 V AC to 265 V AC.The ambient temperature ranges from 0°Cto 60°C. The target regulation level for theoutput current is 1.2 A and 5 V for theoutput voltage. As is evident, the outputcurrent is within the ±5% limits (see redlines) with some margin.

ConclusionOnce the transformer turn ratio is fixed, wehave only to fix the value of the MOSFETcurrent-peak proper by selecting andtuning the resistance connected on thedevice’s IPK pin, which fixes the outputcurrent regulation level. No othercomponents are needed to achieve a fine-working compensation, thus eliminatingthe need to turn off the delay effect.

Literature UCC28910 datasheet

#

#

ABOVE Figure 2:Auxiliary windingwaveforms

LEFT Figure 3:MOSFET current atdifferent converterinput voltage

RIGHT Figure 4: Converter

voltage / current output curves

TI Feature_0514_Layout 1 28/07/2014 10:16

32 PRODUCT UPDATE


Infineon Technologies expands its SiC portfolio withthe 5th generation1200 V thinQ!™ SiC Schottkydiodes. The new 1200V SiC diodes feature morethan 100 % improved surge current capabilityand excellent thermal behavior. These featuresresult in significant efficiency improvementand robust operation in solar inverters, UPS,3-phase SMPS and motor drives.The “Generation 5” SiC diodes use a

new compact chip design, realized bymerged pn junction engineering in theSchottky cell-field. This enables asmaller differential resistance per chiparea. As a result, a reduction of thediode losses by up to 30 %compared to the previousgeneration can be achieved; forexample in a front-end booststage for a 3-phase solarinverter operating at 20 kHz with fullload. At a junction temperature of 150°C, the typical forward voltage is only1.7 V, which is 30 % less compared to the previous generation. According toInfineon this represents the lowest forward voltage available on the market for1200V SiC diodes. Implementing the new SiC diodes in combination withInfineon’s 1200V Highspeed3 IGBT in PFC boost topologies brings significantbenefits on system level. Not only the losses in the diode are reduced, butalso the performance of the Highspeed3 IGBT is improved due to reducedturn-on losses and lower EMI compared to solutions using conventional Sidiodes.

www.infineon.com/sicdiodes1200V

60 V Power MOSFETs

International Rectifier expanded its portfolio of 60 V and up to 240 AStrongIRFET™ power MOSFETs available in various standard andperformance power packages. The new MOSFETs are designed for awide range of industrial applications including power tools, LightElectric Vehicle (LEV) inverters, DC motor drives, Li-Ion battery packprotection, and SMPS secondary-side synchronous rectification.Available in through-hole and surface mount packages, theexpanded 60 V family includes the IRF7580M. Housed in a lowprofile, compact Medium Can (ME) DirectFET® package that delivershigh current density while reducing overall system size and cost, thedevice is well suited for space constrained high power industrialdesigns. As with the entire DirectFET® family, this device has wirebond free construction for improving reliability performance. Thefamily of 19 MOSFETs offers low on-resistance for improvedperformance in low frequency applications, very high-current carryingcapability, soft body diode, and 3 V typical threshold voltage toimprove noise immunity. Each device in the family is 100 %avalanche tested at industry highest avalanche current levels toensure the most robust solution for demanding industrialapplications. Pricing for IRF7580M begins at $0.78 each in 10,000unit quantities.

www.irf.com

TFC’s new MA and MD seriesof inductors integrate a metalcore, for high saturationcurrents, and a unique resincoated shielding layer within aminiature SMD package. Thecombination results inimproved magnetic shieldingand higher inductance valuesfor smaller package sizes. TheMA series has two case sizes from 2.0 x 1.6 mm with a height from 1.0 mmand the MD series from 2.0 x 2.0 mm and a height of 1.2 mm. The range ofinductance is 0.47µH to 4.7µH.High inductance in a miniature package, anoperating temperature of -40 +85°C and excellent saturation current levelsmakes this chip inductor ideal for DC/DC converters.

www.tfc.co.uk

25 V / 30 V MOSFETs in3 mm x 3 mm FootprintAlpha and OmegaSemiconductor released six25 V and 30 V MOSFETs(AON7760, AON7510,AON7758, AON7764,AON7536, and AON7538)in compact 3 x 3 mm DFNpackages. These devicesare suited for a variety ofDC/DC step-downconversion solutions. Theproprietary power trenchMOSFET technology accomplishes a low figure-of-merit for fast switchingapplications such as DC/DC converters that operate over 600 kHz. TheAON7536 is optimized for high-side switching by minimizing Qg and Crss, thus,lowering the switching power losses. When paired with the AON7760,AON7536 can achieve 90 % efficiency at 15 A for a 12 V input and 1.8 Voutput. This new 3x3 DFN family has a 20 % figure-of-merit improvementfrom the previous generation. In addition to the DC/DC applications, theAON7510’s low on-resitance of 1.3m (max) @ 10 V is ideal for conductionloss critical applications such as those with a high current system switch, loadswitch, or motor drive.

www.aosmd.com

SMT Power Inductors

Fifth Generation 1200 V SiC Schottky Diodes

Product Pages_0614_Layout 1 28/07/2014 10:25

WEBSITE LOCATOR 33


AC/DC Connverters

www.irf.comInternational Rectifier Co. (GB) LtdTel: +44 (0)1737 227200

Diodes

Discrete Semiconductors

Drivers ICS

EMC/EMIwww.microsemi.comMicrosemiTel: 001 541 382 8028

Ferrites & Accessories

GTO/Triacs

Hall Current Sensors

IGBTs

DC/DC Connverters


www.power.ti.comTexas InstrumentsTel: +44 (0)1604 663399


www.neutronltd.co.ukNeutron LtdTel: +44 (0)1460 242200

Harmonic Filters

www.murata-europe.comMurata Electronics (UK) LtdTel: +44 (0)1252 811666

Direct Bonded Copper (DPC Substrates)

www.curamik.co.ukcuramik electronics GmbHTel: +49 9645 9222 0


www.mark5.comMark 5 LtdTel: +44 (0)2392 618616

www.dgseals.comdgseals.comTel: 001 972 931 8463

www.microsemi.comMicrosemiTel: 001 541 382 8028


www.digikey.com/europeDigi-KeyTel: +31 (0)53 484 9584


www.dextermag.comDexter Magnetic Technologies, Inc.Tel: 001 847 956 1140



www.protocol-power.comProtocol Power ProductsTel: +44 (0)1582 477737

Busbars

www.auxel.comAuxel FTGTel: + 33 3 20 62 95 20

Capacitors

Certification

www.psl-group.uk.comPSL Group UK Ltd.Tel +44 (0) 1582 676800

Connectors & Terminal Blocks

www.auxel.comAuxel FTGTel: +44 (0)7714 699967

www.productapprovals.co.ukProduct Approvals LtdTel: +44 (0)1588 620192

www.proton-electrotex.com/ Proton-Electrotex JSC/Tel: +7 4862 440642;

www.voltagemultipliers.com Voltage Multipliers, Inc.Tel: 001 559 651 1402


Arbitrary 4-Quadrant PowerSources

www.rohrer-muenchen.deRohrer GmbH Tel.: +49 (0)89 8970120

Website Locator(9)_p41-42 Website Locator 28/07/2014 11:58

34 WEBSITE LOCATOR


Power Modules

Power Protection Products

Power Semiconductors

Power Substrates

Resistors & Potentiometers

RF & Microwave TestEquipment.

Simulation Software

ThyristorsSmartpower Devices

Voltage References

Power ICs

Power Amplifiers

Switches & Relays

Switched Mode PowerSupplies

Switched Mode PowerSupplies

Thermal Management &Heatsinks


www.rubadue.comRubadue Wire Co., Inc.Tel. 001 970-351-6100







www.fujielectric-europe.comFuji Electric Europe GmbHTel: +49 (0)69-66902920



www.ar-europe.ieAR EuropeTel: 353-61-504300



www.universal-science.comUniversal Science LtdTel: +44 (0)1908 222211

www.power.ti.comTexas InstrummentsTel: +44 (0)1604 663399


www.dau-at.comDau GmbH & Co KGTel: +43 3143 23510

www.power.ti.comTexas InstrummentsTel: +44 (0)1604 663399




www.isabellenhuette.deIsabellenhütte Heusler GmbH KGTel: +49/(27 71) 9 34 2 82

ADVERTISERS INDEX

Mosfets

Magnetic Materials/Products

Line Simulation

Optoelectronic Devices


Packaging & Packaging Materials



www.neutronltd.co.ukNeutron LtdTel: +44 (0)1460 242200



www.biaspower.comBias Power, LLCTel: 001 847 215 2427

www.digikey.com/europeDigi-Key Tel: +31 (0)53 484 9584


www.digikey.com/europeDigi-Key Tel: +31 (0)53 484 9584






www.abl-heatsinks.co.ukABL Components LtdTel: +44 (0) 121 789 8686

www.hero-power.com Rohrer GmbH Tel.: +49 (0)89 8970120

www.rohrer-muenchen.deRohrer GmbHTel.: +49 (0)89 8970120


ABB IFCCornell Dubilier 7DFA Media 24 & 27Drives & Controls 2016 IBCFuji Electric 19HKR 17

International Rectifier OBCIsabellenhutte 17LpS 2014 20Messe Munchen 4Powerex 8Toshiba Electronics 13


Website Locator(9)_p41-42 Website Locator 28/07/2014 11:58

DFA Media Ltd • 192 The High Street • Tonbridge • Kent • TN9 1BE • UK • tel: +44 1732 370340 • e: [email protected]

The UK’s leading exhibition for Drives,Automation, Power Transmission and Motion Control Equipment

12-14 APRIL 2016 NEC BIRMINGHAM

Drives & ControlsExhibition and Conference 2016

Contact Doug Devlin on: t: +44 (0) 1922 644766

m: +44 (0) 7803 624471 e: [email protected]

Nigel Borrell on: t: +44 (0) 1732 370 341

m: +44 (0) 7818 098000 e: [email protected]

visit www.drives-expo.com ...The Perfect Fit

35_PEE_0514_Layout 28/07/2014 10:40 Page 1

StrongIRFET™ Rugged,Reliable MOSFETs

Specifications Features:• Ultra low RDS(on)

• High current capability

• Industrial qualified

• Broad portfolio offering

Applications:• DC Motors

• Inverters

• UPS

• Solar Inverter

• ORing or Hotswap

• Battery Packs

PackageBVDSS

(V)

ID@25°C

(A)

RDS(on) max@Vgs = 10V

(m )

Qg@Vgs = 10V

(nC)Part Number

PQFN 5x6

25 100 0.95 56 IRFH8201TRPbF

25 100 1.05 52 IRFH8202TRPbF

30 100 1.1 58 IRFH8303TRPbF

30 100 1.3 50 IRFH8307TRPbF

40 100 1.4 134 IRFH7004TRPbF

40 85 2.4 92 IRFH7440TRPbF

40 85 3.3 65 IRFH7446TRPbF

DirectFET Med.Can

30 192 1.3 51 IRF8301MTRPbF

40 90 1.4 141 IRF7946TRPbF

60 114 3.6 120 IRF7580MTRPBF

D2-Pak

40 195 1.8 150 IRFS7437TRLPbF

40 120 2.8 90 IRFS7440TRLPbF

60 120 5.34 86 IRFS7540TRLPbF

D2-Pak 7pin40 195 1.5 150 IRFS7437TRL7PP

60 240 1.4 236 IRFS7530-7PP

D-Pak40 90 2.5 89 IRFR7440TRPbF

60 90 4 86 IRFR7540TRPbF

TO-220AB

40 195 1.3 300 IRFB7430PbF

40 195 1.6 216 IRFB7434PbF

40 195 2 150 IRFB7437PbF

40 120 2.5 90 IRFB7440PbF

40 118 3.3 62 IRFB7446PbF

60 195 2.0 274 IRFB7530PbF

TO-247 40 195 1.3 300 IRFP7430PbF

For more information call +49 (0) 6102 884 311or visit us at www.irf.com THE POWER MANAGEMENT LEADER

36_PEE_0514_Layout 28/07/2014 10:41 Page 1

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