Facility meeting Oct. 2013 Gopal. Lithography Bay Equipments: Laser writer EVG Mask aligner MJB4...
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Transcript of Facility meeting Oct. 2013 Gopal. Lithography Bay Equipments: Laser writer EVG Mask aligner MJB4...
![Page 1: Facility meeting Oct. 2013 Gopal. Lithography Bay Equipments: Laser writer EVG Mask aligner MJB4 mask aligner EVG Bonder E-Line system Pioneer E-beam system.](https://reader035.fdocuments.in/reader035/viewer/2022062422/56649f2f5503460f94c49f19/html5/thumbnails/1.jpg)
Facility meeting Oct. 2013Gopal.Lithography Bay
Equipments:Laser writerEVG Mask alignerMJB4 mask alignerEVG Bonder
E-Line systemPioneer E-beam system
![Page 2: Facility meeting Oct. 2013 Gopal. Lithography Bay Equipments: Laser writer EVG Mask aligner MJB4 mask aligner EVG Bonder E-Line system Pioneer E-beam system.](https://reader035.fdocuments.in/reader035/viewer/2022062422/56649f2f5503460f94c49f19/html5/thumbnails/2.jpg)
Laser writer (OH)
Laser writer (NOH)
EVG620 (OH)
EVG620 (NOH)
EVG501 (OH)
EVG501 (NOH)
MJB4 (TH)
Used 174 246 110 50 50 40 50
Not Used
6 294 70 310 130 320 120
Downtime
0 0 0 0 0 0 0
Un-available
0 0 0 180 0 180 540
Total 180 540 180 540 180 540 720
0100200300400500600700
Litho Equipments Utilization Chart. Oct - 2013To
tal h
rs
![Page 3: Facility meeting Oct. 2013 Gopal. Lithography Bay Equipments: Laser writer EVG Mask aligner MJB4 mask aligner EVG Bonder E-Line system Pioneer E-beam system.](https://reader035.fdocuments.in/reader035/viewer/2022062422/56649f2f5503460f94c49f19/html5/thumbnails/3.jpg)
Raith e-Line off hrs
Raith e-Line non off hrs
Raith Pioneer off hrs
Raith Pioneer non off hrs
Used
96306
0180
470Not Used
Downtime
Unavailable
Total
50
150
250
Litho Equipments Utilization Chart.October- 2013To
tal h
rs
![Page 4: Facility meeting Oct. 2013 Gopal. Lithography Bay Equipments: Laser writer EVG Mask aligner MJB4 mask aligner EVG Bonder E-Line system Pioneer E-beam system.](https://reader035.fdocuments.in/reader035/viewer/2022062422/56649f2f5503460f94c49f19/html5/thumbnails/4.jpg)
Other Issues:• PO released for EVG and E-line AMC •Resists/chemicals processed depending on the priority•Bonder quartz plate received, will be fabricated in CENTUM•MJB4 training going on.•E-line is down(27th Oct.)- Colum-Chamber valve not opening•Heidelberg Laser Writer to be delivered on 27th Feb.2014 !
![Page 5: Facility meeting Oct. 2013 Gopal. Lithography Bay Equipments: Laser writer EVG Mask aligner MJB4 mask aligner EVG Bonder E-Line system Pioneer E-beam system.](https://reader035.fdocuments.in/reader035/viewer/2022062422/56649f2f5503460f94c49f19/html5/thumbnails/5.jpg)
Trend chart Oct. 2013 : E-line
Oct Nov Dec Jan Feb Mar Apr May Jun Jul Aug sept Oct Nov Dec0
5
10
15
20
25
30
9 10 10 1012 13 14 14 13 13 14 14
25
HSQ 120nm
Month
CD in
nm
![Page 6: Facility meeting Oct. 2013 Gopal. Lithography Bay Equipments: Laser writer EVG Mask aligner MJB4 mask aligner EVG Bonder E-Line system Pioneer E-beam system.](https://reader035.fdocuments.in/reader035/viewer/2022062422/56649f2f5503460f94c49f19/html5/thumbnails/6.jpg)
Jun Jul Aug Sept Oct0
5
10
15
20
25
30
13 1315 15
25HSQ 120nm Pioneer
Month
CD in
nm
Trend chart. Oct.2013 : Pioneer
![Page 7: Facility meeting Oct. 2013 Gopal. Lithography Bay Equipments: Laser writer EVG Mask aligner MJB4 mask aligner EVG Bonder E-Line system Pioneer E-beam system.](https://reader035.fdocuments.in/reader035/viewer/2022062422/56649f2f5503460f94c49f19/html5/thumbnails/7.jpg)
Trend chart: Oct.2013:
July Aug Sep Oct0
0.5
1
1.5
2
2.5
3
3.5
MJB4
1 Micron
2 Micron
3 Micron
Months
Feat
ure
size
in M
icron
s
Reisit: AZnLoFSpin coated at 3000rpm for 40 sec.Thickness: 2umSoft bake 1 min at 110CExposure for 8 seconds in MJB4Post exposure bake for 1 min at 110CDevelopment for 25 secs (AZ726MIF)
![Page 8: Facility meeting Oct. 2013 Gopal. Lithography Bay Equipments: Laser writer EVG Mask aligner MJB4 mask aligner EVG Bonder E-Line system Pioneer E-beam system.](https://reader035.fdocuments.in/reader035/viewer/2022062422/56649f2f5503460f94c49f19/html5/thumbnails/8.jpg)
Trend chart : Oct.2013
May
JuneJuly
August
Septem
ber
October
0
0.5
1
1.5
2
2.5
3
3.5
EVG 620
1 Micron2 Micron3 Micron
Months
Feat
ure
size
in M
icron
s
Resist: S1813Spin coated at 6000rpm for 40 secsThickness: 1 umSoft bake 1 min at 110CExposure 50 mJ/cm2 in EVG620Development for 18 secs (AZ351B 1:4)
![Page 9: Facility meeting Oct. 2013 Gopal. Lithography Bay Equipments: Laser writer EVG Mask aligner MJB4 mask aligner EVG Bonder E-Line system Pioneer E-beam system.](https://reader035.fdocuments.in/reader035/viewer/2022062422/56649f2f5503460f94c49f19/html5/thumbnails/9.jpg)
Nov Dec Jan Feb Mar Apr MayJuneAug Sep Oct0
0.5
1
1.5
2
2.5
3
3.5
Laser Writer (Direct writing)
Series1Series3Series5
Months
Feat
ure
size
in M
icron
s
Resist: S1813Spin coated at 4000rpm for 40 secsThickness: 1.3 umSoft bake 1 min at 110CDose: Lens-5, Filter-3%, Gain-12, D-step-2, Pos speed -1Development for 38 secs (AZ351B 1:4)
Trend chart : Oct.2013
![Page 10: Facility meeting Oct. 2013 Gopal. Lithography Bay Equipments: Laser writer EVG Mask aligner MJB4 mask aligner EVG Bonder E-Line system Pioneer E-beam system.](https://reader035.fdocuments.in/reader035/viewer/2022062422/56649f2f5503460f94c49f19/html5/thumbnails/10.jpg)
Thanks