FABRICATION of MOSFETs - KFUPMfaculty.kfupm.edu.sa/coe/elrabaa/rich text/coe360/CMOS...

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Transcript of FABRICATION of MOSFETs - KFUPMfaculty.kfupm.edu.sa/coe/elrabaa/rich text/coe360/CMOS...

  • FABRICATION of

    MOSFETsCMOS fabrication sequence -p-type silicon substrate wafer-creation of n-well regions for pMOStransistors, -impurity implantation into the substrate. -thick oxide is grown in the regions -surrounding the nMOS and pMOS active regions. -creation of n+ and p+ regions -final metallization & interconnects.

  • CMOS Process

    PMOS transistors created in an n-well Typically substrate has lower doping on

    the surface

  • Fabrication Patterning of

    SiO2 Grow SiO2 on Si by

    exposing to O2 high temperature accelerates

    this process Cover surface with

    photoresist (PR) Sensitive to UV light

    (wavelength determines feature size)

    Positive PR becomes soluble after exposure

    Negative PR becomes insoluble after exposure

  • Fabrication Patterning of

    SiO2

    PR removed with a solvent

    SiO2 removed by etching (HF)

    Remaining PR removed with another solvent

  • Summary

    The result of a single lithographic patterning sequence on silicon dioxide, without showing the intermediate steps.

    unpatternedstructure (top)

    patterned structure (bottom)

  • Fabrication of nMOSTransistor

    Thick field oxide grown

    Field oxide etched to create area for transistor

    Gate oxide (high quality) grown

  • Fabrication of NMOS Transistor

    Polysilicon deposited (doped to reduce R) Polysilicon etched to form gate Gate oxide etched from source and drain

    Self-aligned process because source/drain aligned by gate

    Si doped with donors to create n+ regions

  • NMOS Transistor Fabrication

    Insulating SiO2 grown to cover surface/gate Source/Drain regions opened Aluminum evaporated to cover surface Aluminum etched to form metal1 interconnects

  • Metallization

  • Device Isolation Techniques

    To prevent unwanted conduction To avoid creation of inversion layers

    outside channel regions To reduce leakage currents

    devices are made into Active areasSurrounded by field oxide (thick oxide barrier)

  • CMOS n-well process

    P-type substrate n-well region for PMOS thin gate oxide is grown on

    top of the active regions thick field oxide is grown in

    the areas surrounding the transistor active regions

    gate oxide thickness and quality affect the operational characteristics of the MOS transistor and reliability.

  • -polysilicon layer -deposited by chemical vapor deposition (CVD) -patterned by etching. -polysilicon lines will function as the gate of MOS - act as self-aligned masks for source and drain

  • Masks n+ and p+

    regions implanted in its locations

    ohmiccontacts to substrate and to n-well

    Contacts to Silicon needs toBe through heavily doped regionsTo avoid them as junctions

  • Metal (aluminum) is deposited over the entire chip surface using metal evaporation, and the metal lines are patterned through etching. Since the wafer surface is non-planar, the quality and the integrity of the metal lines created in this step are very critical and are ultimately essential for circuit reliability

  • Complete

  • mask sequence applied to create desired structures

  • Inverter Fabrication

    Inverter Logic symbol CMOS inverter circuit CMOS inverter layout (top view of lithographic masks)

  • Inverter layout

    A A

    np-substrate Field

    Oxidep+n+

    In

    Out

    GND VDD

    (a) Layout

    (b) Cross-Section along A-A

    A A

  • Inverter Fabrication

    N-wells created Thick field oxide grown surrounding active

    regions Thin gate oxide grown over active regions

  • Inverter Fabrication

    Polysilicon deposited Chemical vapor deposition Dry plasma etch

  • Inverter Fabrication

    N+ and P+ regions created using two masks Source/Drain regions Substrate contacts

  • Inverter Fabrication

    Insulating SiO2 deposited using CVD Source/Drain/Substrate contacts exposed

  • Inverter Fabrication

    Metal (Al) deposited using evaporation Metal patterned by etching

  • Layout Design Rulesspecifyspecify minimum allowable widths for physical objects

    e.g. metal and polysilicon interconnects or diffusion areas. For the line not to break

    minimum feature dimensions. To avoid open circuit

    minimum allowable separations between two such features. To avoid unwanted short circuit

    main objectivemain objective

    To increase possibility of successful product

  • Design rules

    Micron rules Effitient Layout Non-Scalable, non-transfareble to other

    technology Lambda () rules

    Scalled to any technology Ineffetient layout: depends on worst case

    can make design bigger than needed

  • Lambda (Lambda ()) Is the integer fraction half the

    minimum fabrication feature size of technology.1m technology = 0.5 m

    Assume W=3 and L= 2 = 0.5 m W=1.5 m & L =1 m = 0.3 m W=.9 m & L =.6 m

    Even if technology can give 0.5 m, L = 0.6 m because of rules

  • Lambda (Lambda () Rules) Rules R1 Minimum active area width 3 R2 Minimum active area spacing 3

    R3 Minimum poly width 2 R4 Minimum poly spacing 2 R5 Minimum gate extension of poly over

    active 2 R6 Minimum poly-active edge spacing 1

    (poly outside active area) R7 Minimum poly-active edge spacing 3

    (poly inside active area)

    R8 Minimum metal width 3 R9 Minimum metal spacing 3

    R10 Poly contact size 2 R11 Minimum poly contact spacing 2 R12 Minimum poly contact to poly edge

    spacing 1 R13 Minimum poly contact to metal edge

    spacing 1 R14 Minimum poly contact to active

    edge spacing 3 R15 Active contact size 2 R16 Minimum active contact spacing 2

    (on the same active region) R17 Minimum active contact to active

    edge spacing 1 R18 Minimum active contact to metal

    edge spacing 1 R19 Minimum active contact to poly

    edge spacing 3 R20 Minimum active contact spacing 6

    (on different active regions)

  • Stick diagrams showing various CMOS inverter layout options

  • FABRICATION of MOSFETsCMOS ProcessFabrication Patterning of SiO2Fabrication Patterning of SiO2Fabrication of nMOS TransistorFabrication of NMOS TransistorNMOS Transistor FabricationMetallizationDevice Isolation TechniquesCMOS n-well process-polysilicon layer -deposited by chemical vapor deposition (CVD) -patterned by etching. -polysilicon lines will function asInverter FabricationInverter layoutInverter FabricationInverter FabricationInverter FabricationInverter FabricationInverter FabricationLayout Design RulesDesign rulesLambda ()Lambda () Rules