Extreme ultraviolet sources for lithography applicationseuvlsymposium.lbl.gov/pdf/2006/pres/1SO01...
Transcript of Extreme ultraviolet sources for lithography applicationseuvlsymposium.lbl.gov/pdf/2006/pres/1SO01...
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Vadim Banine
Requirements and prospects of next generation Extreme Ultraviolet Sources for Lithography
Applications
Vadim Banine, Harm-Jan Voorma et al
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ASML EUV team presentations at this conferenceOther presentations:
Meiling et al. Progress in the realisation of EUV lithographyGroeneveld et al. Full field imaging by the ASML EUV alpha demo toolM. van den Brink: keynote speechKürz et al. (Zeiss) Optics for EUV lithographyCorthout et al. (Philips Extreme UV): the Philips Extreme UV source: recent progress in power, lifetime, and collector lifetime
PostersMaarten van Herpen Sn cleaning of multi-layer mirrors with hydrogen radicalsA.E. Yakshin et al. Interface engineering of Mo/Si multilayers for enhanced reflectance in EUVL applications
Other (Workshops, TWG meetings,…)TNO/Bas W.: optics lifetime workshop
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Contents
Power at intermediate focusPower production (Discharge or Laser Produced Plasma)Power collectionSpectral purity
Endurance of subsystemsConclusions
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Power at intermediate focusdependence
Power of the sourceOptical efficiency of the system:
Collection efficiency of the collectorSpectral purity filter transparencyDebris mitigation transparency (not covered here)
SOURCE CHARACTERISTIC REQUIREMENTWavelength 13.5 [nm] EUV Power (in-band) in IF 180 [W] (for 100 wph
in tool etendue)
Collector
FilterSource
Debris mitigation
Aperture (IF)
Vacuum chamber
See Presentation of M. van den Brink
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Power at intermediate focusdependence
Power of the sourceOptical efficiency of the system:
Collection efficiency of the collectorSpectral purity filter transparency
SOURCE CHARACTERISTIC REQUIREMENTWavelength 13.5 [nm] EUV Power (in-band) in IF 180 [W]
Collector
FilterSource
Debris mitigation
Aperture (IF)
Vacuum chamber
/ Slide 6Philips Extreme UV
+
laser
tin supply
cooling channel
Philips‘ EUV Lamp: Sn-based rotating electrodes
- 200W/2π continuous operation (scalable to >600W /2π)- very small pinch (<1mm)- >>1 bln shots electrode life- commercial product
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Laser triggered multiplexed Sn source evolution
Trigger laserRotating electrodes with
Sn - surface
EUV
Achieved:• 2 % CE• 18 kW (Continuous)360 W in 2π in-band (about 18-36 W IF)
2000-20052006
Laser triggered multiplexed pseudo spark
Characteristics:• Sustains High heat load• Built-in debris mitigation• Large opening angle• No electrode erosion
Distributed heat load:Theoretically 120 kW for rotating wheels
And> 200 kW for jets
* See presentation of Koshelev at SWSIn co-operation between ISAN and ASML
CE
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Source power progress has been increasing
0.1
1
10
100
1000
2001 2003 2005 2007 2009 2011Year
Pow
er, W
@ IF
in-b
and
Planned performance
supplier 2supplier 1
supplier 3supplier 4
Need 180+ W for HVM,
100+ wph at 10 mJ/cm2
Roadmaps conform to requirements
Actual data
Sn Xe
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Power at intermediate focusdependence
Power of the sourceOptical efficiency of the system:
Collection efficiency of the collectorSpectral purity filter transparency
SOURCE CHARACTERISTIC REQUIREMENTWavelength 13.5 [nm] EUV Power (in-band) in IF 180 [W]
Collector
FilterSource
Debris mitigation
Aperture (IF)
Vacuum chamber
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Collector status
Two approaches to collector design:• Grazing incidence• Normal incidence multilayer collector
Challenges:• High collection efficiency • Heat load control
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Collector development
Sagem
• Optimized Throughput is up to 30% of 2π
Improvement of 2x-3x in collection efficiency in comparison to the current is foreseen
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Power at intermediate focusdependence
Power of the sourceOptical efficiency of the system:
Collection efficiency of the collectorSpectral purity filter transparency
SOURCE CHARACTERISTIC REQUIREMENTWavelength 13.5 [nm] EUV Power (in-band) in IF 180 [W]
Collector
FilterSource
Debris mitigation
Aperture (IF)
Vacuum chamber
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Spectral purity (DUV)•DUV is defined here as non-EUV resistsensitive radiation•Factors which influence the spectral purity specification :
• non-EUV resist sensitive radiation @at wafer (not well known and different for different resists)• non-EUV ML reflectivity (depends on wavelength, 11 mirrors!)• non-EUV source output (different per source
Joint spec: 1% DUV relative to in-band EUV
@ wafer
RDUV ∼ 0.5 NMLM = 11
Collector
FilterSourceIF
Mitigation system
<3-7% DUV @ IF
If Spectral Purity Filter will be needed for HVM we should be prepared
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Results of the mechanical filter fabrication, solution once and for all (Transmission @13.5 nm 78%)
Uniformity about 0.5%
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.20.000
0.002
0.004
0.006
0.008
0.010
0.012
0.014
0.016
0.018
0.020
0.022
0.024
Tran
smis
sion
Wavelength ( µ m)
>1000x in DUV
About 50x in IR
0.2 Wavelength, µm 2.2
Tran
smis
sion
Typical transmission in DUV and IR
6 7 8 9 10 11 12 13 14 15 16 17 18 1976,076,276,476,676,877,077,277,477,677,878,078,278,478,678,879,079,279,479,679,880,0
Tran
smiti
on c
oeffi
cien
t, %
Sample coordinate, mm
Zr/Si - filter with 23 periods Zr/Si - filter with 37 periods
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Endurance of the subsystems
Lifetime of the source componentsLifetime of optical components:
Collector lifetime and debris mitigationSpectral purity endurance
Lifetime of components (HVM) Target
Non-consumables 15000 exp. hoursConsumables 3000 exp. hours
Collector
FilterSource
Debris mitigation
Aperture (IF)
Vacuum chamber
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Endurance of the subsystems
Lifetime of components Target
Non-consumables 15000 hoursConsumables 3000 hours
Lifetime of the source componentsLifetime of optical components:
Collector lifetime and debris mitigationSpectral purity endurance
Collector
FilterSource
Debris mitigation
Aperture (IF)
Vacuum chamber
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Lifetime of the source components(DPP example)
0.01
0.1
1
10
100
1000
10000
100000
2001 2002 2003 2004 2005 2006 2007 2008 2009
Year
Elec
trode
life
time,
exp
. hou
rs
Target for production if collector is:
Consumables 3000 hr
Non-consumable 15000 hr
SnXe
Introduction of the Sn recoverable electrodes brings the source electrodes lifetime within the target values
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Endurance of the subsystems
Lifetime of the source componentsLifetime of optical components:
Collector lifetime and debris mitigationSpectral purity endurance
Lifetime of components Target
Consumable 15000 hoursNon-consumable 3000 hours
Collector
FilterSource
Debris mitigation
Aperture (IF)
Vacuum chamber
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Endurance of the collectorPrevent the reflection loss during
exposureClean if necessary between
exposures
Robustness of in-situcleaning process
Effectiveness of debris mitigation system
0 5 10 15 20 25 300
10
20
30
40
50
60
70
80
90
100
Reference sample before exposureSample after 100 MS shots exposureE
UV
inba
nd re
flect
ivity
(%)
Grazing incidence angle (°)
Black: reference sample before exposureRed: result after 100Mpulse exposure
0 5 10 15 20 25 300
10
20
30
40
50
60
70
80
90
100
EU
V in
band
refle
ctiv
ity (%
)Grazing incidence angle (°)
Blue: reference sample before deposition/cleaningRed: result after 30 Sn deposition and cleaning cycles
No productivity degradation after repeated deposit & clean
-25
-20
-15
-10
-5
0
5
0 5 10 15 20 25 30 35
Number of clean & expose cycles
Rel
. ref
lect
ion
loss
[%]
-10% productivity
No productivity degradation after exposure to 100E6 pulses
-25
-20
-15
-10
-5
0
5
0 20 40 60 80 100Exposure time [Mpulse]
Rel
. ref
lect
ion
loss
[%]
-10% productivity
Projected lifetime of 1-2 years
PHILIPS
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Eindhoven, 12-13 Sept. 2006CONSORTIUM CONFIDENTIAL
Sn deposition and cleaning of ML mirror
Cold cleaning (<100 C) procedure has beenIntroduced also for ML mirrors.It proved to be working in the experiments performed within More Moore Program with:• ASML• IPM• Sagem• Philips Research
ML manufactured (Pre) – ML covered with Sn (After Sn) – ML cleaned (Post)
See poster of M. van Herpen
PHILIPS
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0.0001
0.001
0.01
0.1
1
10
100
1000
10000
100000
2001 2002 2003 2004 2005 2006 2007 2008 2009
Col
lect
or u
sage
[exp
os. h
rs @
10
kHz]
Sn
Xe
Collector lifetime combining a number of methods
Combination of different number
of methods
Target for production if collector is:
Consumable 3000 hr
Non-consumable 15000 hr
Combination of methods demonstrate projected lifetime of 1-2 years
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SPF transmission and endurance
A film sample emitting light at q = 5.7 W/cm2, seen with and without external illumination; t ≈ 700º C
Recent results of 25 day exposures at 0.3 W/cm2,
Inband transmission variation: (76.53 ± 0.11) % (76.0.4 ± 0.5) %
Out-of-EUV (633 nm) transmission variation: 2.54% 2.8%
PMC and Half Year EC Review MeetingsEindhoven, 12-13 Sept. 2006
CONSORTIUM CONFIDENTIAL 6
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Concluding remarks
The source power requirement remains >180 W EUV source to support 100+ wph throughput tool is needed
• Sources working with alternative materials and/or multiplexing show that power scaling (20-50 W already now) is feasible and roadmaps is conform required power level
• The work on collectors show a significant increase in the collection efficiencies (2-3x) to be possibleCombination of a number of debris mitigation methods results in the projected collector lifetime of ∼1-2 yearFull field spectral purity filter has been manufactrured and withstood endurance testing (up to1000 x DUV suppression for 22% EUV loss)
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People contributed to the presentation
ASML: J. Benschop, N. Harned, H. Meiling, H. MeijerISAN: K. Koshelev and teamTUE: K. GielessenPhilips Research: M. van Herpen, W. Soer
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Acknowledgements
Thanks for help at…ASMLPhilipsXtreme TechnologiesCymerPhystexSagemMedia Lario
…and many others with support from national governments, More Mooreand European Commission