Extending Semiconductor Equipment Lifetimes within European Market

Noel Mckenny

Novellus Systems Europe

Tech ARENA 2, SEMICON Europa 11th Oct 2011

P. 2

Challenges for Wafer Fabs increase over time...

Obsolescence

Unpredictability of costs

Technical support

availability

Capability/quality of

used tools

Options for extendibility

Ever-increasing

environmental and

regulatory demands

70% of all Fabs built before 2001

Challenges to cost reduction for mature technologies

impact vast majority of European wafer Fabs

P. 3

Cost Reduction Have the OEMs introduced measures to address the challenge?

OEMs have been… Reducing direct support of

older products • But not supporting /

engaging with alternative sources

• And not supporting customer self sufficiency

Not adequately supporting

extendibility

Creating expensive and inflexible solutions

• And little help to make them affordable

Slow to respond to

Environmental demands

So…what should the OEMs be doing? Source: Gartner

Focused on

leading edge

technology

P. 4

OEMs must adopt changes to reflect the customers needs now and in the future…

Support extendibility of older products

• Don’t focus only on 300mm

• Actively help customers become self sufficient

Be more focused on reducing your costs

• And be more flexible – charge only for what is needed

• Upgrades ideally have payback under 6 months but no more than 1 year

Help to manage the risks of using older equipment

• Be willing to engage and enable 3rd parties to provide support

• Help reduce the risks associated with buying used tools

Do more to support efforts to go green

…So, who is Novellus today and

what are we doing ?

P. 5

Who is Novellus?

Acquired 1997

Acquired 2001

Acquired 2002

Acquired 2004

Thin Film Systems

P. 6

Our 150-200mm Product Portfolio

C1D –C1W

C2 Sequel

C2 Altus

C2 Speed

Sabre

Inova

XM8 & XM90

Inline 3180/90

Inline 3280/90

M2000

M2i

MBB

372/472

676/776

AURIGA

CMP V

MV200

A – Series

L – Series

PEP – Series

Gamma 2100

PM200

Apollo

Over 40 Different Configurations continue to be supported by Novellus

P. 7

Our RSB & CS Engineering Focus

Business Segment is > 65nm up to 2μm Source: SICAS Feb 2007

NVLS Strategic Marketing

<150mm

Cost

300mm

Technology Value

200mm

Wafe

r C

ap

acit

y

(no

rma

lized

)

65nm 90n

m

130nm 180n

m

0.25m 0.35m 0.5m 0.75m 45nm 1m 2m

Technology nodes for

Refurbished Business

P. 8

What are we doing ? Novellus is… Supporting Extendibility

Increased engineering resources on mature products • Dedicated Engineering

resources to 150 / 200mm tools • Obsolescence, CIP, Process

and Technical Support

Created over 100 Performance Enhancements • Customer Driven • 300mm concepts adapted to

200mm tools • Enabling tool reuse,

extendibility and Greener

Expanded online information

Made refurbished equipment available with latest technical and safety options

Novellus Systems Proprietary InformationNovellus Systems Proprietary InformationP. P. 3636

Online Information Online Information -- InfoSourceInfoSource

www.Novellus.comwww.Novellus.com

P. 9

Refurbished Systems Portfolio

P. 10

Novellus is… Helping to Manage Risks Partnering with 3rd party companies

Fab

3rd Parties

Current Relationship New Relationship

Fab

Separation of OEM & 3rd parties

wastes time, energy & money

for the Fab

STS (Varian PVD)

N-Star / M+W (Services)

Rite Track (Service)

Point35 (C1 + C2 Platforms)

EUPT (Gasonics Platforms)

Teltec (CMP Service)

CyberOptics (Automation)

Kotec (RPC & RF)

SEMCO (PVD ESC)

Licensed

3rd Parties

OEMs Novellus

Lower cost of engineering

Products tailored to Fab needs

OEM safety and quality standards

P. 11

Novellus is changing…

Help to go green

Help manage the risks of

using older equipment

Be more focused on

reducing your costs

Support extendibility of

older products

300mm Green technology scaled to <200mm

Additional Green product options being added

Expanded obsolescence engineering

Low-Risk, Low-Cost Refurbished Tools

Able to leverage specialists with 3rd party Partners

Substantial increase in number of Refurbished Parts

Introduced Balanced Payment options

All upgrades have payback < 1 year

Added dedicated engineering resources

Increased information available online

> 100 Performance Enhancements and adding more…

Better… but we still have work to do and …

P. 12

We Need your Help ...

We must move beyond an adversarial relationship • Negotiation “battles” rarely lead to the best solutions

IP must be protected – both yours and ours • Ongoing support is funded by our IP

• Enabling second-sources to counterfeit our designs is counterproductive

Help us to innovate • Give us feedback and ideas

• Data sharing is critical to lowering costs

Contact the OEM first – we can provide a broader range

of solutions • We can tailor those solutions to your needs

• ... and if a 3rd party is needed, we’ll facilitate it!

The challenge for Customers and OEMs is to find ways to

productively change our existing relationship

THE END

Many Thanks!

Tech ARENA Forum, SEMICON Europa 11th Oct 2011

BACK UP

P. 15

Example1 PECVD: Novellium Showerheads Materials CIP – Improved Availability & Lifetime

Problem Statement:

• High in-films defects on PECVD Tools are directly linked to AlFx powder formed on the shower heads

• Shower head life is limited by AlFx Formation that impacts process results

Goal • Eliminate AlFx powder/particles from shower

head surface

Solution • New Novellium aluminum alloy that grows a

thin surface passivation layer which does not become thicker over time

Status • Hardware:

– Incorporated all the existing learning from Vector pedestal & SH development

– Verified formation of passivation layer

• Results: – Passed Alpha test at NVLS

• Stable wafer metrics and defects • Process transparent (oxide & SiN

processes) – Currently in customer Beta

• Over 85,000 wafers passed • On-wafer performance equal or better

than POR 6061 SH • Milestone

– Customer will provide official update in Oct’09

85k chamber opening Devi

ce X

Yield data (arb. Unit)

Devi

ce X

P. 16 Novellus Systems Proprietary Information

Example 2 PECVD: Brazed Heater Block Component Design CIP – Lifetime & COO Improvement

Project Statement: Current heater block experiences premature failure due to the heating element reliability.

Deliverables/Goals: A brazed design heater block will eliminate thermal

stress on the heating element thereby providing

improved reliability

Milestones/Status: •Complete Alpha Test Oct 30, 2009

•Complete Beta Test Jan 31. , 2010

•ECO release Feb. 25, 2010

P. 17 Novellus Systems Proprietary Information

Example3 PECVD: Adjustable Showerheads Component Design CIP – Ease of Service Improvement

Project Statement: Current showerhead assembly has excessive down time during PM (showerhead change and

gapping setup).

Deliverables/Goals: A bellows driven drop in replacement will reduce tool

down time by over 50%, and provide repeatable

showerhead spacing setup between showerhead and

heater block

Milestones/Status: •Complete Alpha Test Sept. 30, 2009

•Complete Beta Test Dec. 31 , 2009

•ECO release Jan. 25, 2010

P. 18

Example4 WCVD: Altus Pulsed Nucleation Layer (PNLTM) Technology CIP - Tool Extendibility

Shrinking Geometries difficult to fill As device geometries shrink, conventional CVD

nucleation does not meet requirements for step coverage, thickness and resistivity

Technology Breakthrough! PNL hardware capable of meeting extreme

geometry requirements (down to 45nm node)

No loss of tool productivity! Tool throughput maintained!

70 nm

17:1 AR

110 nm

14:1 AR

Fully Retrofittable! Can be installed on all existing Altus tools –

allows use of older tools for newer technology

nodes!

New Hardware Gasbox

Pneumatic Box

Software

50 nm

6:1 AR

P. 19

C2 Altus Tools Performance Enhancement Pulsed Nucleation Layer (PNLTM)

The PNL configuration allows

nucleation at stations 1 and 2

The PNL hardware allows stations to

run independently Nucleation and CVD bulk fill can be deposited

simultaneously on different stations

Provides leading edge technology

for fraction of new tool cost!!

Can be installed with under two

weeks downtime!

Plug Fill

PNL

PNL

CVD

CVD CVD

1

2

Ar or Ar/H2 flow

SiH4 Divert /

Line charge

SiH4 flow Purge WF6 flow Purge WF6 Divert/

Line charge

One Cycle

Repeat

40 Torr, 300°C

Standard Altus system. Stations are Well Isolated

Uses Dual Divert technology

100% Step Coverage and

Excellent Uniformity on All TiN

0.11m

P. 20

C2 ALTUS PNL™ BKM3 Yield and CMP Impact

BKM3 provides greater

process window and

corresponding yield

improvement

Dramatic post-CMP

coring reduction with

PNL vs CVD

nucleation

wf # Contact Via-1 Yield

1

2

4

CVD Nucl CVD Nucl Baseline

11

12

13

14

PNL BKM3 80Å

PNL BKM3 80Å

Baseline + 8.1%

CVD Nucl PNL BKM3

P. 21

Lower Rc, tighter distribution and higher yield with PNL

CVD Nucleation

PNL Nucleation 10

0K c

hai

n

N+

Reg

ion

100K

ch

ain

P+

Reg

ion

25K

ch

ain

N+

, un

lan

ded

25K

ch

ain

P+

, un

lan

ded

ALTUS Pulsed Nucleation Layer (PNL) Electrical & Yield Performance Examples

Yie

ld

70

72

74

76

78

80

82

84

86

CVD BKM 2 BKM 3

P. 22

Example5 HDP: SPEED B-Manifold Clean Process CIP - MWBWC & Defectivity Improvement

C-manifold Clean: over-etch (clean) at top of dome • Over-etched dome increases chance of film flaking as a function

of wafer accumulation within PM cycle

B-Manifold Clean: reduce over-etch at top of dome • Multi point injection shifts to a higher concentration of NF3 at

the bottom of the chamber

Entered Beta in Sept-09, complete Nov-09, Release Dec-09

Injection through C-manifold Injection through B-manifold

Localized over etch on the top

of dome

Uniformly etch the

whole dome

P. 23

B-Manifold Clean (Uniform Clean)

Typical STI: Dome and long injectors at ~ 2000 wafers with BKM Man-C clean and active EPD (BKM - 25 % OE)

Bay 20 SPD 1, STI, Dome and long injectors after ~ 5000 eq. wafers with Uniform Clean and active EPD

SJ Bay 20-1 STI: Dome and long injectors after ~ 2500 eq. wafers with Uniform Clean and active EPD

Purpose: Improves MWBC (reduced overetch) & reduces random particle events

P. 24

B-Manifold Clean (Uniform Clean) STI Particle Performance

HDPB101A (Particle and Wafer Counts)

0

50

100

150

200

250

300

350

400

450

500

8/1

/2004

8/8

/2004

8/1

4/2

004

8/1

9/2

004

8/2

4/2

004

8/2

6/2

004

9/3

/2004

9/8

/2004

9/1

3/2

004

9/1

5/2

004

9/1

7/2

004

9/2

2/2

004

9/2

3/2

004

9/2

4/2

004

9/3

0/2

004

10/

8/2

004

10/

9/2

004

10/

13/2

004

10/

14/2

004

10/

18/2

004

10/

21/2

004

10/

22/2

004

10/

26/2

004

10/

30/2

004

11/

3/2

004

11/

5/2

004

11/

6/2

004

11/

8/2

004

11/

12/2

004

11/

18/2

004

11/

19/2

004

11/

23/2

004

11/

29/2

004

Date

Part

icle

Coun

ts

0

500

1000

1500

2000

2500

3000

3500

4000

Wafe

r C

ounts

Adder Area Count Spec<70 Resetable

B-Manifold Clean / Biased PC

Significant defect reduction and increased MWBWC

sampled over 18 weeks volume production

P. 25

Increased Throughput

Lowering PFC Emissions in 200mm Fabs

• PFCs from etch and CVD chamber cleaning account for up to 90% of emissions

• RPC can reduce tool Cx/Fx emissions by 50%*

• Beta Test on Concept One underway

*Airproducts/Novellus 2005

PECVD: Remote Plasma Clean Hardware CIP – Helps Go Green & Throughput Increase

RF 7umRPC 7um

RPC 12um

12.7

20.4

24.0

0

5

10

15

20

25TEOS 12.7k TPH Improvement

• RPC NF3 = higher etch rates vs in-situ clean

• Shorter clean times = Larger batch sizes

• Up to 90% Improvement in T-put for TEOS*

• Up to 2% improvement in SiON Yield

Increasing Productivity and Reducing Environmental Impact

P. 26

Example6: PECVD / HDP RF Endpoint Process CIP in Partnerships – Additional Green Options

C1D BKM C2F6 in-situ clean optimized

Trace-Rite RF End Point Detection is

more powerful than optical due to the

intrinsic signal to noise ratio

Sampling the load with the powered

electrodes provides more information

than the small solid angle of acceptance

possible with a fiber optics

Result is higher sensitivity & no time lag

P. 27

Mood Median Test: ADDERS Before versus After

Mood median test for ADDERS

Chi-Square = 6.23 DF = 1 P = 0.013

Individual 95.0% CIs

Before/After N<= N> Median Q3-Q1 ----+---------+---------+---------+--

After 31 15 5.00 7.25 (---*-------)

Before 72 83 9.00 23.00 (-------*-----------)

----+---------+---------+---------+--

5.0 7.5 10.0 12.5

Before

After

200150100500

Be

fore

Aft

er

95% Bonferroni Confidence Intervals for StDevs

Before

After

300250200150100500

Be

fore

Aft

er

ADDERS

Test Statistic 0.00

P-Value 0.000

Test Statistic 3.59

P-Value 0.060

F-Test

Levene's Test

Test for Equal Variances for ADDERS

There is a statistically

significant difference

between “Before & After”

Customer Particles Statistics

Many Thanks

P. 29

Performance Enhancement Catalogue All Product Groups , All CIP Areas

80 Product Enhancement

Datasheets across all

toolsets

Each one provides

Performance Data and ROI

based on Novellus BKM

All are available in

Softcopy from local

Service and Sales team

P. 30

1. Particle Performance Endpoint/Toggle

installed

Right after WC

Justification