Excaliber Low-Noise High-Speed Precision Operational Amplifier

1FEATURES

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TLE2142

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NC – No internal connection

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TLE2144

DW PACKAGE

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TLE2141

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(TOP VIEW)

DESCRIPTION

TLE2141-EPTLE2142-EPTLE2144-EP

www.ti.com........................................................................................................................................................................................................ SLOS577–MAY 2008

Excalibur™ LOW-NOISE HIGH-SPEED PRECISION OPERATIONAL AMPLIFIER

2• Controlled Baseline • Low Noise– One Assembly Site – 10 Hz...15 nV/√Hz– One Test Site – 1 kHz...10.5 nV/√Hz– One Fabrication Site • 10 000-pF Load Capability

• Extended Temperature Performance of • 20-mA (Min) Short-Circuit Output Current–55°C to 125°C • 27-V/µs Slew Rate (Min)

• Enhanced Diminishing Manufacturing Sources • High Gain-Bandwidth Product...5.9 MHz(DMS) Support • Low VIO...900 µV (Max) at 25°C

• Enhanced Product-Change Notification • Single or Split Supply...4 V to 44 V• Qualification Pedigree(1)

• Fast Settling Time(1) Component qualification in accordance with JEDEC and – 340 ns to 0.1%industry standards to ensure reliable operation over an

extended temperature range. This includes, but is not limited – 400 ns to 0.01%to, Highly Accelerated Stress Test (HAST) or biased 85/85, • Saturation Recovery...150 nstemperature cycle, autoclave or unbiased HAST,electromigration, bond intermetallic life, and mold compound • Large Output Swing...life. Such qualification testing should not be viewed as VCC– + 0.1 V to VCC+ – 1 Vjustifying use of this component beyond specifiedperformance and environmental limits.

The TLE214x devices are high-performance, internally compensated operational amplifiers built using the TexasInstruments complementary bipolar Excalibur™ process. They are pin-compatible upgrades to standard industryproducts.

The design incorporates an input stage that simultaneously achieves low audio-band noise of 10.5 nV/√Hz with a10-Hz 1/f corner and symmetrical 40-V/µs slew rate typically with loads up to 800 pF. The resulting low distortionand high power bandwidth are important in high-fidelity audio applications. A fast settling time of 340 ns to 0.1%of a 10-V step with a 2-kΩ/100-pF load is useful in fast actuator/positioning drivers. Under similar test conditions,settling time to 0.01% is 400 ns.

1

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications ofTexas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2Excalibur is a trademark of Texas Instruments.

PRODUCTION DATA information is current as of publication date. Copyright © 2008, Texas Instruments IncorporatedProducts conform to specifications per the terms of the TexasInstruments standard warranty. Production processing does notnecessarily include testing of all parameters.

http://focus.ti.com/docs/prod/folders/print/tle2141-ep.html



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TLE2141-EPTLE2142-EPTLE2144-EPSLOS577–MAY 2008........................................................................................................................................................................................................ www.ti.com

The devices are stable with capacitive loads up to 10 nF, although the 6-MHz bandwidth decreases to 1.8 MHzat this high loading level. As such, the TLE214x are useful for low-droop sample-and-holds and direct buffering oflong cables, including 4-mA to 20-mA current loops.

The special design also exhibits an improved insensitivity to inherent integrated circuit component mismatches asis evidenced by a 900-µV maximum offset voltage and 1.7-µV/°C typical drift. Minimum common-mode rejectionratio and supply-voltage rejection ratio are 85 dB and 90 dB, respectively.

Device performance is relatively independent of supply voltage over the ±2-V to ±22-V range. Inputs can operatebetween VCC– – 0.3 V to VCC+ – 1.8 V without inducing phase reversal, although excessive input current may flowout of each input exceeding the lower common-mode input range. The all-npn output stage provides a nearlyrail-to-rail output swing of VCC– – 0.1 V to VCC+ – 1 V under light current-loading conditions. The device cansustain shorts to either supply since output current is internally limited, but care must be taken to ensure thatmaximum package power dissipation is not exceeded.

Both versions can also be used as comparators. Differential inputs of VCC± can be maintained without damage tothe device. Open-loop propagation delay with TTL supply levels is typically 200 ns. This gives a good indicationas to output stage saturation recovery when the device is driven beyond the limits of recommended output swing.

The TLE214x devices are available in industry-standard 8-pin and 16-pin small-outline packages. The devicesare characterized for operation from –55°C to 125°C.

ORDERING INFORMATION (1)

TA PACKAGE (2) ORDERABLE PART NUMBER TOP-SIDE MARKINGSingle SOIC – D (8 pin) Reel of 2500 TLE2141MDREP 2141EP

–55°C to 125°C Dual SOIC – D (8 pin) Reel of 2500 TLE2142MDREP (3) TBDQuad SOIC – DW (16 pin) Reel of 2000 TLE2144MDWREP (3) TBD

(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TIweb site at www.ti.com.

(2) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.(3) Product Preview. Contact your TI sales representative for availability.

SYMBOL

A. OFFSET N1 and OFFSET N2 are available only on the TLE2141.

2 Submit Documentation Feedback Copyright © 2008, Texas Instruments Incorporated

Product Folder Link(s): TLE2141-EP TLE2142-EP TLE2144-EP




http://www.ti.com

http://www.ti.com/packaging

http://www.go-dsp.com/forms/techdoc/doc_feedback.htm?litnum=SLOS577&partnum=TLE2141-EP




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EQUIVALENT SCHEMATIC

A. OFFSET N1 and OFFSET N2 are available only on the TLE2141.

Copyright © 2008, Texas Instruments Incorporated Submit Documentation Feedback 3









ABSOLUTE MAXIMUM RATINGS (1)

RECOMMENDED OPERATING CONDITIONS


over operating free-air temperature range (unless otherwise noted)

VCC+ Supply voltage (2) 22 VVCC– Supply voltage –22 VVID Differential input voltage (3) ±44 VVI Input voltage range (any input) VCC+ V to (VCC– – 0.3) VII Input current (each input) ±1 mAIO Output current ±80 mA

Total current into VCC+ 80 mATotal current out of VCC– 80 mADuration of short-circuit current at (or below) 25°C (4) Unlimited

D package 97.1°C/WθJA Package thermal impedance (5) (6)

DW package 57.3°C/WTA Operating free-air temperature range –55°C to 125 °CTstg Storage temperature range (7) –65°C to 150 °C

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C

(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratingsonly, and functional operation of the device at these or any other conditions beyond those indicated under recommended operatingconditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) All voltage values, except differential voltages, are with respect to the midpoint between VCC+ and VCC–.(3) Differential voltages are at IN+ with respect to IN–. Excessive current flows, if input, are brought below VCC– – 0.3 V.(4) The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure that the maximum dissipation

rating is not exceeded.(5) Maximum power dissipation is a function of TJ(max), θJA, and TA. The maximum allowable power dissipation at any allowable ambient

temperature is PD = (TJ(max) – TA)/θJA. Operating at the absolute maximum TJ of 150°C can affect reliability.(6) The package thermal impedance is calculated in accordance with JESD 51-7.(7) Long-term high temperature storage and/or extended use at maximum recommended operating conditions may result in a reduction of

overall device life. See http://www.ti.com/ep_quality for additional information on enhanced product packaging.

MIN MAX UNITVCC± Supply voltage ±2 ±22 V

VCC = 5 V 0 2.7VIC Common-mode input voltage V

VCC± = ±15 V –15 12.7TA Operating free-air temperature –55 125 °C






http://www.ti.com/ep_quality





TLE2141 ELECTRICAL CHARACTERISTICS



VCC = 5 V, at specified free-air temperature (unless otherwise noted)

TLE2141PARAMETER TEST CONDITIONS TA

(1) UNITMIN TYP MAX

25°C 225 1400VIO Input offset voltage VO = 2.5 V, RS = 50 Ω, VIC = 2.5 V µV

Full range 2100Temperature coefficient ofαVIO VO = 2.5 V, RS = 50 Ω, VIC = 2.5 V Full range 1.7 µV/°Cinput offset voltage

25°C 8 100IIO Input offset current VO = 2.5 V, RS = 50 Ω, VIC = 2.5 V nA

Full range 25025°C –0.8 –2

IIB Input bias current VO = 2.5 V, RS = 50 Ω, VIC = 2.5 V µAFull range –2.3

–0.3 to25°C 0 to 3 3.2Common-mode inputVICR RS = 50 Ω Vvoltage range –0.3 toFull range 0 to 2.7 2.9IOH = –150 µA 3.9 4.1IOH = –1.5 mA 25°C 3.8 4IOH = –15 mA 3.2 3.7

VOH High-level output voltage VIOH = –100 µA 3.75IOH = –1 mA Full range 3.65IOH = –10 mA 3.25IOL = 150 µA 75 125

mVIOL = 1.5 mA 25°C 150 225IOL = 15 mA 1.2 1.6 V

VOL Low-level output voltageIOL = 100 µA 200

mVIOL = 1 mA Full range 250IOL = 10 mA 1.25 V

25°C 50 220Large-signal differential VIC = 2.5 V, RL = 2 kΩ,AVD V/mVvoltage amplification VO = 1 V to –1.5 V Full range 5ri Input resistance 25°C 70 MΩci Input capacitance 25°C 2.5 pFzo Open-loop output impedance f = 1 MHz 25°C 30 Ω

25°C 85 118CMRR Common-mode rejection ratio VIC = VICR(min), RS = 50 Ω dB

Full range 8025°C 90 106Supply-voltage rejection ratiokSVR VCC± = ±2.5 V to ±15 V, RS = 50 Ω dB(ΔVCC±/ΔVIO) Full range 8525°C 3.4 4.4

ICC Supply current VO = 2.5 V, No load, VIC = 2.5 V mAFull range 4.6

(1) Full range is –55°C to 125°C.










TLE2141 OPERATING CHARACTERISTICS


VCC = 5 V, TA = 25°C (unless otherwise noted)

TLE2141PARAMETER TEST CONDITIONS UNIT

MIN TYP MAXSR+ Positive slew rate AVD = –1, RL = 2 kΩ (1), CL = 500 pF 45 V/µsSR– Negative slew rate AVD = –1, RL = 2 kΩ (1), CL = 500 pF 42 V/µs

To 0.1% 0.16ts Settling time AVD = –1, 2.5-V step µs

To 0.01% 0.22f = 10 Hz 15

Vn Equivalent input noise voltage RS = 20 Ω nV/√Hzf = 1 kHz 10.5

f = 0.1 Hz to 1 Hz 0.48Peak-to-peak equivalent inputVN(PP) µVnoise voltage f = 0.1 Hz to 10 Hz 0.51f = 10 Hz 1.92

In Equivalent input noise current pA/√Hzf = 1 kHz 0.5VO = 1 V to 3 V, RL = 2 kΩ (1), AVD = 2,THD+N Total harmonic distortion plus noise 0.0052 %f = 10 kHz

B1 Unity-gain bandwidth RL = 2 kΩ (1), CL = 100 pF (1) 5.9 MHzGain-bandwidth product RL = 2 kΩ (1), CL = 100 pF (1), f = 100 kHz 5.8 MHz

BOM Maximum output-swing bandwidth VO(PP) = 2 V, RL = 2 kΩ (1), AVD = 1 660 kHzφm Phase margin at unity gain RL = 2 kΩ (1), CL = 100 pF (1) 57 °

(1) RL and CL terminated to 2.5 V.













VCC = ±15 V, at specified free-air temperature (unless otherwise noted)


(1) UNITMIN TYP MAX

25°C 200 900VIO Input offset voltage VIC = 0, RS = 50 Ω µV

Full range 1700Temperature coefficient ofαVIO VIC = 0, RS = 50 Ω Full range 1.7 µV/°Cinput offset voltage

25°C 7 100IIO Input offset current VIC = 0, RS = 50 Ω nA

Full range 25025°C –0.7 –1.5

IIB Input bias current VIC = 0, RS = 50 Ω µAFull range –1.8

–15 to –15.3 to25°C 13 13.2Common-mode inputVICR RS = 50 Ω Vvoltage range –15 to –15.3 toFull range 12.7 12.9IO = –150 µA 13.8 14.1IO = –1.5 mA 25°C 13.7 14IO = –15 mA 13.1 13.7Maximum positive peakVOM+ Voutput voltage swing IO = –100 µA 13.7IO = –1 mA Full range 13.6IO = –10 mA 13.1IO = 150 µA –14.7 –14.9IO = 1.5 mA 25°C –14.5 –14.8IO = 15 mA –13.4 –13.8Maximum negative peakVOM– Voutput voltage swing IO = 100 µA –14.6IO = 1 mA Full range –14.5IO = 10 mA –13.4

25°C 100 450Large-signal differentialAVD VO = ±10 V, RL = 2 kΩ V/mVvoltage amplification Full range 20ri Input resistance 25°C 65 MΩci Input capacitance 25°C 2.5 pFzo Open-loop output impedance f = 1 MHz 25°C 30 Ω


Full range 8025°C 90 106Supply-voltage rejection ratiokSVR VCC± = ±2.5 V to ±15 V, RS = 50 Ω dB(ΔVCC±/ΔVIO) Full range 85

VID = 1 V –25 –50IOS Short-circuit output current VO = 0 25°C mA

VID = –1 V 20 3125°C 3.5 4.5

ICC Supply current VO = 0, No load, VIC = 2.5 V mAFull range 4.7













VCC = ±15 V, TA = 25°C (unless otherwise noted)


MIN TYP MAXSR+ Positive slew rate AVD = –1, RL = 2 kΩ, CL = 100 pF 27 45 V/µsSR– Negative slew rate AVD = –1, RL = 2 kΩ, CL = 100 pF 27 42 V/µs

To 0.1% 0.34ts Settling time AVD = –1, 10-V step µs

To 0.01% 0.4f = 10 Hz 15



In Equivalent input noise current pA/√Hzf = 1 kHz 0.47

THD+N Total harmonic distortion plus noise VO(PP) = 20 V, RL = 2 kΩ, AVD = 10, f = 10 kHz 0.01 %B1 Unity-gain bandwidth RL = 2 kΩ, CL = 100 pF 6 MHz

Gain-bandwidth product RL = 2 kΩ, CL = 100 pF, f = 100 kHz 5.9 MHzBOM Maximum output-swing bandwidth VO(PP) = 20 V, AVD = 1, RL = 2 kΩ, CL = 100 pF 668 kHzφm Phase margin at unity gain RL = 2 kΩ, CL = 100 pF 58 °















(1) UNITMIN TYP MAX

25°C 220 1900VIO Input offset voltage VO = 2.5 V, RS = 50 Ω, VIC = 2.5 V µV

Full range 2600Temperature coefficient ofαVIO VO = 2.5 V, RS = 50 Ω, VIC = 2.5 V Full range 1.7 µV/°Cinput offset voltage


Full range 20025°C –0.8 –2




mVIOL = 1.5 mA 25°C 150 225IOL = 15 mA 1.2 1.4 V



25°C 50 220Large-signal differentialAVD VIC = 2.5 V, RL = 2 kΩ, VO = 1 V to 1.5 V V/mVvoltage amplification Full range 5ri Input resistance 25°C 70 MΩci Input capacitance 25°C 2.5 pFzo Open-loop output impedance f = 1 MHz 25°C 30 Ω




















To 0.01% 0.22f = 10 Hz 15




B1 Unity-gain bandwidth RL = 2 kΩ (1), CL = 100 pF 5.9 MHzGain-bandwidth product RL = 2 kΩ (1), CL = 100 pF, f = 100 kHz 5.8 MHz

BOM Maximum output-swing bandwidth VO(PP) = 2 V, RL = 2 kΩ (1), AVD = 1, CL = 100 pF 660 kHzφm Phase margin at unity gain RL = 2 kΩ (1), CL = 100 pF 57 °

(1) RL terminated at 2.5 V.















(1) UNITMIN TYP MAX

25°C 290 1200VIO Input offset voltage VIC = 0, RS = 50 Ω µV

Full range 2000Temperature coefficient ofαVIO VIC = 0, RS = 50 Ω Full range 1.7 µV/°Cinput offset voltage


Full range 25025°C –0.7 –1.5







VID = –1 V 20 3125°C 6.9 9


















To 0.01% 0.4f = 10 Hz 15


f = 0.1 Hz to 1 Hz 0.48Peak-to-peak equivalent inputVn(PP) µVnoise voltage f = 0.1 Hz to 10 Hz 0.51f = 10 Hz 1.89



Gain-bandwidth product RL = 2 kΩ, CL = 100 pF, f = 100 kHz 5.9 MHzVO(PP) = 20 V, AVD = 1, RL = 2 kΩ, AVD = 1,BOM Maximum output-swing bandwidth 668 kHzCL = 100 pF

φm Phase margin at unity gain RL = 2 kΩ, CL = 100 pF 58 °















(1) UNITMIN TYP MAX

25°C 0.5 3.8VIO Input offset voltage VO = 2.5 V, RS = 50 Ω, VIC = 2.5 V mV

Full range 5.2Temperature coefficient ofαVIO VO = 2.5 V, RS = 50 Ω, VIC = 2.5 V Full range 1.7 µV/°Cinput offset voltage


Full range 25025°C –0.8 –2




mVIOL = 1.5 mA 25°C 150 225IOL = 15 mA 1.2 1.6 V



25°C 50 95Large-signal differential VIC = 2.5 V, RL = 2 kΩ,AVD V/mVvoltage amplification VO = 1 V to –1.5 V Full range 5ri Input resistance 25°C 70 MΩci Input capacitance 25°C 2.5 pFzo Open-loop output impedance f = 1 MHz 25°C 3. Ω




















To 0.01% 0.22f = 10 Hz 15




B1 Unity-gain bandwidth RL = 2 kΩ (1), CL = 100 pF 5.9 MHzGain-bandwidth product RL = 2 kΩ (1), CL = 100 pF, f = 100 kHz 5.8 MHz

BOM Maximum output-swing bandwidth VO(PP) = 2 V, RL = 2 kΩ (1), AVD = 1 660 kHzφm Phase margin at unity gain RL = 2 kΩ (1), CL = 100 pF 57 °

(1) RL terminated at 2.5 V.















(1) UNITMIN TYP MAX

25°C 0.6 2.4VIO Input offset voltage VIC = 0, RS = 50 Ω mV

Full range 4Temperature coefficient ofαVIO VIC = 0, RS = 50 Ω 25°C 1.7 µV/°Cinput offset voltage


Full range 25025°C –0.7 –1.5







VID = –1 V 20 3125°C 13.8 18


















To 0.01% 0.4f = 10 Hz 15


f = 0.1 Hz to 1 Hz 0.48Peak-to-peak equivalent inputVn(PP) µVnoise voltage f = 0.1 Hz to 10 Hz 0.51f = 10 Hz 1.89



Gain-bandwidth product RL = 2 kΩ, CL = 100 pF, f = 100 kHz 5.9 MHzBOM Maximum output-swing bandwidth VO(PP) = 20 V, AVD = 1, RL = 2 kΩ, CL = 100 pF 668 kHzφm Phase margin at unity gain RL = 2 kΩ, CL = 100 pF 58 °










TYPICAL CHARACTERISTICS



Table of GraphsFigure 1,

VIO Input offset voltage Distribution Figure 2,Figure 3

IIO Input offset current vs Free-air temperature Figure 4vs Common-mode input voltage Figure 5

IIB Input bias currentvs Free-air temperature Figure 6vs Supply voltage Figure 7vs Free-air temperature Figure 8

VOM+ Maximum positive peak output voltagevs Output current Figure 9vs Settling time Figure 11vs Supply voltage Figure 7vs Free-air temperature Figure 8

VOM– Maximum negative peak output voltagevs Output current Figure 10vs Settling time Figure 11

VO(PP) Maximum peak-to-peak output voltage vs Frequency Figure 12VOH High-level output voltage vs Output current Figure 13VOL Low-level output voltage vs Output current Figure 14

Phase shift vs Frequency Figure 15vs Frequency Figure 15

AVD Large-signal differential voltage amplificationvs Free-air temperature Figure 16

zo Closed-loop output impedance vs Frequency Figure 17IOS Short-circuit output current vs Free-air temperature Figure 18

vs Frequency Figure 19CMRR Common-mode rejection ratio

vs Free-air temperature Figure 20vs Frequency Figure 21

kSVR Supply-voltage rejection ratiovs Free-air temperature Figure 22vs Supply voltage Figure 23

ICC Supply currentvs Free-air temperature Figure 24

Vn Equivalent input noise voltage vs Frequency Figure 25Vn Input noise voltage Over a 10-second period Figure 26In Noise current vs Frequency Figure 27THD+N Total harmonic distortion plus noise vs Frequency Figure 28

vs Free-air temperature Figure 29SR Slew rate

vs Load capacitance Figure 30Noninverting large signal vs Time Figure 31

Pulse response Inverting large signal vs Time Figure 32Small signal vs Time Figure 33

B1 Unity-gain bandwidth vs Load capacitance Figure 34Gain margin vs Load capacitance Figure 35

φm Phase margin vs Load capacitance Figure 36










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TLE2141DISTRIBUTION OF

INPUT OFFSET VOLTAGE

VIO − Input Offset V oltage − µV

236 Units T ested From 1 W afer LotVCC± = ±15 VTA = 25°CP Package

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VIO − Input Offset V oltage − mV

VCC± = ±15 VTA = 25°CN Package

250 Units T ested From 1 W afer Lot

−0.8− 2 −1.2 −0.4 0.4 1.2 2

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FREE-AIR TEMPERATURE

−75 −50 −25 0 25 50 75 100 125TA − Free-Air T emperature − °C

150

VCC± = ±15 V

VCC± = ±2.5 V

VO = 0VIC = 0


Figure 1. Figure 2.

Figure 3. Figure 4.










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INPUT BIAS CURRENTvs

COMMON-MODE INPUT VOLTAGE

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B

VIC − Common-Mode Input V oltage − V

VCC± = ±2.5 V

TA = 25°C

TA = 125°C

TA = −55°C

−0.4

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−3 −0.5IIB

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INPUT BIAS CURRENTvs


TA − Free-Air T emperature − °C−75 −50 −25 0 25 50 75 100 125 150

VO = 0VIC = 0

VCC± = ±15 V

−900

−800

−700

−600

−500

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MAXIMUM PEAK OUTPUT VOLTAGEvs


−75 −50 −25 0 25 50 75 100 125TA − Free-Air T emperature − °C

150

VCC± = ±15 V

VOM+

RL = 2 kΩ

RL = 2 kΩ

VOM−

RL = ∞

RL = ∞

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18 21 24

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− 6

VO

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VCC± − Supply V oltage − V


SUPPLY VOLTAGE

RL = 2 kΩTA = 25°C

VOM+

VOM−



Figure 5. Figure 6.

Figure 7. Figure 8.










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13.8

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MAXIMUM POSITIVE PEAKOUTPUT VOLTAGE

vsOUTPUT CURRENT

14

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14.2

14.6

IO − Output Current − mA

VO

M +

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TA = 125°C

TA = 25°C

−0.1

TA = −55°C

−14.8

− 150.1 10.4

MAXIMUM NEGATIVE PEAKOUTPUT VOLTAGE

vsOUTPUT CURRENT

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104 10040

−14.2

−14.4

−14


−13.6

−13.8

−13.4

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TA = 125°C

TA = −55°C

TA = 25°C

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ge −

V

MAXIMUM PEAK-TO-PEAKOUTPUT VOLTAGE

vsFREQUENCY

5

0

25

100 k 400 k 1 M

f − Frequency − Hz

20

15

10

30

4 M 10 M

VCC± = ±15 VRL = 2 kΩ

TA = 125°C

TA = −55°C

TA = 25°C

VO

(PP

)


Figure 9. Figure 10.











3.6

3.4

4.6

−1 −10

− H

igh-

Leve

l Out

put V

olta

ge −

V 4.4

4.2

4

HIGH-LEVEL OUTPUT VOLTAGEvs

OUTPUT CURRENT

VO

H


−100

TA = −55°C

TA = 125°C

TA = 25°C

VCC = 5 V

3.8

−0.1

200

0

1000

0.1 1 10V

OL

− Lo

w-L

evel

Out

put V

olta

ge −

mV

800

600

400

LOW-LEVEL OUTPUT VOLTAGEvs

OUTPUT CURRENT

VO

LIO − Output Current − mA

100

1400

1200

TA = −55°C

TA = 125°C

VCC = 5 V

TA = 25°C

10

20

1 10 100 1 M

30

40

50

LARGE-SIGNAL DIFFERENTIAL VOL TAGEAMPLIFICATION AND PHASE SHIFT

vsFREQUENCY


10 M− 10

0

Pha

se S

hift

80

90

100

110

120

60

70

0°

20°

40°

60°

80°

100°

120°

140°

160°

180°

200°

220°

240°

260°1 k 10 k 100 k

VCC± = ±15 VRL = 2 kΩCL = 100 pFTA = 25°C

AVD

Phase Shift

AV

D −

Lar

ge-S

igna

l Diff

eren

tial

Vol

tage

Am

plifi

catio

n −

dBA

VD

−75 −50 −25 0 25 50 75 100 125 150

LARGE-SIGNAL DIFFERENTIALVOLTAGE AMPLIFICATION

vsFREE-AIR TEMPERATURE

80

100

120

140

TA − Free-Air T emperature − °C

RL = 2 kΩ

RL = 10 kΩ

VCC± = ±15 VVO = ±10 V

AV

D −

Lar

ge-S

igna

l Diff

eren

tial

Vol

tage

Am

plifi

catio

n −

dBA

VD














1

0.1

0.01

0.0011 k 10 k 100 k 1 M

− C

lose

d-Lo

op O

utpu

t Im

peda

nce

− 10


100

10 M

CLOSED-LOOP OUTPUT IMPEDANCEvs

FREQUENCY

Ωz

o

AVD = 100

AVD = 1

30 Ω

AVD = 10

− S

hort-

Circ

uit O

utpu

t Cur

rent

− m

A−75 −50 −25 0 25 50 75 100 125 150

20

30

40


SHORT-CIRCUIT OUTPUT CURRENTvs


50

60

OS

I

VCC± = ±15 VVO = 0

VID = 1

VID = −1


COMMON-MODE REJECTION RATIOvs

FREQUENCY

60

40

20

0100 1 k 10 k

CM

RR

− C

omm

on-M

ode

Rej

ectio

n R

atio

− d

B

80

100

120

100 k 1 M

140VCC± = ±15 VTA = 25°C

−75 −50 −25 0 25 50 75 100 125 150100

104

108

112


COMMON-MODE REJECTION RATIOvs


116

120

CM

RR

− C

omm

on-M

ode

Rej

ectio

n R

atio

− d

B VCC = 5 VVIC = VICRmin

VCC± = ±15 V













100

80

20

010 100 1 k

kSV

R −

Sup

ply-

Vol

tage

Rej

ectio

n R

atio

− d

B

120

140


160

10 k 100 k 1 M 10 M

SUPPLY-VOLTAGE REJECTION RATIOvs

FREQUENCY

kS

VR

kSVR−

VCC± = ±2.5 V to ±15 VTA = 25°C

60

40

kSVR+

SUPPLY-VOLTAGE REJECTION RATIOvs



106

104

102

100

108

110

−75 −50 −25 0 25 50 75 100 125 150

VCC± = ±2.5 V to ±15 V

kSV

R −

Sup

ply-

Vol

tage

Rej

ectio

n R

atio

− d

Bk

SV

R

SUPPLY CURRENTvs

SUPPLY VOLTAGE

IDD

− S

uppl

y C

urre

nt −

mA

CC

I 2.5

20 4 8 12 16 20

3

3.5

24|VCC±| − Supply V oltage − V

4

TA = 125°C

TA = −55°C

TA = 25°C

VO = 0No Load

2.8

3

3.2

3.4

3.6

3.8

IDD

− S

uppl

y C

urre

nt −

mA

CC

I

SUPPLY CURRENTvs


−75 −50 −25 0 25 50 75 100 125 150TA − Free-Air T emperature − °C

VO = 0No Load

VCC± = ±15 V

VCC± = ±2.5 V














2 4 6

0

250

8 10

t − Time − s

INPUT NOISE VOLTAGEOVER A 10-SECOND PERIOD

500

750VCC± = ±15 Vf = 0.1 to 10 HzTA = 25°C

Inpu

t Noi

se V

olta

ge −

nV

−250

−500

−7500

250

Vn

− E

quiv

alen

t Inp

ut N

oise

Vol

tage

−

100

50

01 100 1 k

150


200

10 k

EQUIVALENT INPUT NOISE VOLTAGEvs

FREQUENCY

TA = 125°C

TA = −55°C

TA = 25°C

VCC± = ±15 VRS = 20Ω

10

nV/

Hz

4

2

0

6

8

10 100 1 k 10 k

− N

oise

Cur

rent

− p

A/

I n


NOISE CURRENTvs

FREQUENCY

Hz

TA = −55°C

TA = 25°C

TA = 125°C

1 0.001%10 1 k 10 k 100 k

TH

D +

N −

Tot

al H

arm

onic

Dis

torti

on +

Noi

se −

%

TOTAL HARMONIC DISTORTIONPLUS NOISE

vsFREQUENCY

0.01%

0.1%

1%

100f − Frequency − Hz

VO(PP) = 20 VVCC± = ±15 VTA = 25°C

AV = 100RL = 600 Ω

AV = 100RL = 2 kΩ

AV = 10RL = 2 kΩ

AV = 10RL = 600 Ω













µs

SR

− S

lew

Rat

e −

V/

0

10

20

30

CL − Load Capacitance − nF

SLEW RATEvs

LOAD CAPACITANCE

101 0.10.01

VCC± = ±15 VAVD = − 1TA = 25°C

SR+

SR−

40

50

−75 −50 −25 0 25 50 75 100 125 150TA − Free-Air T emperature − °C

30

20

10

40µs

SR

− S

lew

Rat

e −

V/

SLEW RATEvs


0

50

60

SR +

SR −

VCC± = ±15 VAVD = − 1RL = 2 kΩCL = 500 pF

0

−10

−150 1

5

10

15

2 3 4 5

VO

− O

utpu

t Vol

tage

− V

VO

t − Time − µs

NONINVERTINGLARGE-SIGNAL

PULSE RESPONSE

TA = −55°C

TA = 25°C

TA = 125°C

TA = 25°C

TA = −55°C

TA = 125°C

VCC± = ±15 VAVD = 1RL = 2 kΩCL = 300 pF

0

−10

−15

5

10

15

−5

543210

t − Time − µs

INVERTINGLARGE-SIGNAL

PULSE RESPONSE

VO

− O

utpu

t Vol

tage

− V

VO

VCC± = ±15 VAVD = −1RL = 2 kΩCL = 300 pF

TA = 25°C

TA = −55°CTA = 125°C TA = −55°C

TA = 25°CTA = 125°C

0

−10

−15

5

10

15

−5














VO

− O

utpu

t Vol

tage

− m

VV

O

0

−100

100

50

4000 800 1200 1600

t − Time − ns

SMALL-SIGNALPULSE RESPONSE

VCC± = ±15 VAVD = −1RL = 2 kΩCL = 300 pFTA = 25°C

−50

4

3

2

110 100

B1

− U

nity

-Gai

n B

andw

idth

− M

Hz

5

6

7

1000 10000B

1CL − Load Capacitance − pF

UNITY-GAIN BANDWIDTHvs

LOAD CAPACITANCE

TA = −55°C

TA = 25°C

TA = 125°C

VCC± = ±15 VRL = 2 kΩ

10 10000CL − Load Capacitance − pF

PHASE MARGINvs

LOAD CAPACITANCE

1000100

− P

hase

Mar

gin

TA = −55°C

TA = 125°C

VCC± = ±15 VRL = 2 kΩ

70°

60°

50°

40°

30°

20°

10°

0°

φm

TA = 25°C

2

010

Gai

n M

argi

n −

dB

4

6

10000CL − Load Capacitance − pF

8

10

GAIN MARGINvs

LOAD CAPACITANCE

1000100

12

14

TA = 125°C

TA = 25°C

TA = −55°C

VCC± = ±15 VAVD = 1RL = 2 kΩ to ∞VO = −10 V to 10 V













APPLICATION INFORMATION

Input Offset Voltage Nulling

+

–

OUT

IN+

IN-

3

2

6

15

OFFSET N1OFFSET N2

5 kW

1 kW

VCC– (split supply)

GND (single supply)



The TLE2141 offers external null pins that can be used to further reduce the input offset voltage. If this feature isdesired, connect the circuit of Figure 37 as shown. If external nulling is not needed, the null pins may be leftunconnected.

Figure 37. Input Offset Voltage Null Circuit










TAPE AND REEL INFORMATION

*All dimensions are nominal

Device PackageType

PackageDrawing

Pins SPQ ReelDiameter

(mm)

ReelWidth

W1 (mm)

A0(mm)

B0(mm)

K0(mm)

P1(mm)

W(mm)

Pin1Quadrant

TLE2141MDREP SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1

TLE2144MDWREP SOIC DW 16 2000 330.0 16.4 10.75 10.7 2.7 12.0 16.0 Q1

PACKAGE MATERIALS INFORMATION

www.ti.com 14-Jul-2012

Pack Materials-Page 1

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)

TLE2141MDREP SOIC D 8 2500 340.5 338.1 20.6

TLE2144MDWREP SOIC DW 16 2000 367.0 367.0 38.0

PACKAGE MATERIALS INFORMATION

www.ti.com 14-Jul-2012

Pack Materials-Page 2

GENERIC PACKAGE VIEW

Images above are just a representation of the package family, actual package may vary.Refer to the product data sheet for package details.

DW 16 SOIC - 2.65 mm max heightSMALL OUTLINE INTEGRATED CIRCUIT

4040000-2/H

www.ti.com

PACKAGE OUTLINE

C

TYP10.639.97

2.65 MAX

14X 1.27

16X 0.510.31

2X8.89

TYP0.330.10

0 - 80.30.1

(1.4)

0.25GAGE PLANE

1.270.40

A

NOTE 3

10.510.1

BNOTE 4

7.67.4

4220721/A 07/2016

SOIC - 2.65 mm max heightDW0016ASOIC

NOTES: 1. All linear dimensions are in millimeters. Dimensions in parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M. 2. This drawing is subject to change without notice. 3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not exceed 0.15 mm, per side. 4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm, per side.5. Reference JEDEC registration MS-013.

1 16

0.25 C A B

98

PIN 1 IDAREA

SEATING PLANE

0.1 C

SEE DETAIL A

DETAIL ATYPICAL

SCALE 1.500

www.ti.com

EXAMPLE BOARD LAYOUT

0.07 MAXALL AROUND

0.07 MINALL AROUND

(9.3)

14X (1.27)

R0.05 TYP

16X (2)

16X (0.6)

4220721/A 07/2016


NOTES: (continued) 6. Publication IPC-7351 may have alternate designs. 7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.

METAL SOLDER MASKOPENING

NON SOLDER MASKDEFINED

SOLDER MASK DETAILS

OPENINGSOLDER MASK METAL

SOLDER MASKDEFINED

LAND PATTERN EXAMPLESCALE:7X

SYMM

1

8 9

16

SEEDETAILS

SYMM

www.ti.com

EXAMPLE STENCIL DESIGN

R0.05 TYP

16X (2)

16X (0.6)

14X (1.27)

(9.3)

4220721/A 07/2016


NOTES: (continued) 8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate design recommendations. 9. Board assembly site may have different recommendations for stencil design.

SOLDER PASTE EXAMPLEBASED ON 0.125 mm THICK STENCIL

SCALE:7X

SYMM

SYMM

1

8 9

16

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Excaliber Low-Noise High-Speed Precision Operational Amplifier

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