Examples and disciptions for measurements On pixel and strip sensors.

Examples and disciptions for measurements

On pixel and strip sensors

New Panel

21/04/23 DESY Zeuthen 2

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

16 H

16 L

18 H

18 L

24 H24 L21 H

21 L

General CommentsIf you are not sure about the setup, settings or obtained results:

CONTACT THE EXPERT!!!BUT check before: Is everything switched on? Connect cable in a prober way? • Check if bias ring is connected to ground (switch light on (0V!!!) and see if

current flow) Same for pixel if you have doubts

Move chuck up and down 3x, test again

• 3 Needle measurements (special Cint) could be problematic if the contact is lost -> check all 3 curves!

• Be careful if the needles are in contact and you touch the probe station or close it -> go to seperation before

• WedgeCard handle: Fix X; Move Y to the right position and fix it, needle high (Z-direction) change with fixing!!!; Contact Z

• 11121/04/23 DESY Zeuthen 3

CHECK THAT !!!

0 50 100 150 200 250 300

9.00E-014

9.50E-014

1.00E-013

1.05E-013

1.10E-013

1.15E-013

1.20E-013

1.25E-013

1.30E-013

1.35E-013

1.40E-013

1.45E-013

1.50E-013

1.55E-013

1.60E-013

1.65E-013

1.70E-013

1.75E-013

FZ320P-02-Mpix-2_1-120_line7_0006_pixel FZ320P-02-Mpix-2_1-120_line7_0008_pixel FZ320P-02-Mpix-2_1-120_line7_0010_pixel

Loosing one contact (partly)

Ag

ilen

t_E

49

81

A-f

ara

d

voltage0 50 100 150 200 250 300

-5.00E-015

0.00E+000

5.00E-015

1.00E-014

1.50E-014

2.00E-014

2.50E-014

3.00E-014

3.50E-014

Ag

ilen

t_E

49

81

A-f

ara

d

voltage

FZ320P-02-Mpix-2_7-120_line7_0006_pixel FZ320P-02-Mpix-2_7-120_line7_0008_pixel FZ320P-02-Mpix-2_7-120_line7_0010_pixel Average pixel 8 & 10

Loosing one contact (complete)

How to measure irradiated sensors• Open dry air valves and cool down the Chuck to -10*C

– LOOK that the pressure not drops below 5bar!– Open the outer door of the lap and switch on the air system

• Take the sensor from the fridge & put it into the station. – Close the climate chamber and look if water is on the probe station / sensor and

wait until everything is dry! (COMMENT: If this takes longer than 1-2 minutes something is maybe wrong!)

• Cool down to -20*C and have a look to the pressure. If it drops to strong close dry air valves. WAIT 1 minute after reaching goal temperature that everything is stabilized!

– Look if no Water/Ice is on the sensor. If this happen you have to warm the chuck again and wait until everything is dry again!!!

– Needles cool down during measurement -> first time it could be that you loose the contact => CHECK THAT.

• Note the time (if greater than 5 minutes; in 5 minute steps) the sensor was approximately over 0*C in the field: “Additional comment” as: “Sensor was warmed approximately … minutes”

------------------------------------------------------------------------------• After measurement: Warm the Chuck to -5*C and take

the sensor out and bring it back to fridge (ASAP!!!)


I/V - Bias ring /Guard ring (Change Ampere meter)

- Voltage source: 0…(700)1000V for (120;200um)320um thickness; 300/500V for 100 and 50

um [OR maximum Voltage before break] in 5V steps < 100V, 10V steps >100

- !!!Type (p -> ’-’; n -> ’+’) !!!!- T = 22 / -20 ˚C (non-irradiated / irradiated)- Currentlimit: 50A / 1mA (non-irradiated / irradiated)

A

VD

C

SampleChuck

BP

Bia

s R

ing

Guard Ring

0 100 200 300 400 500 600 7000.0

2.0n

4.0n

6.0n

8.0n

10.0n

even numbers = poly siliconodd numbers = punch throughregions 1-6 pixel length = 2421mregions 7-12 pixel length = 1171m

I/V Bias Ring -FZ320P-07-Mpix-1

Cu

rre

nt [

A]

1-120 2-120 3-100 4-100 5-80 6-80 7-120 8-120 9-100 10-100 11-80 12-80

Voltage [V]

Additional Measurement for Irrad.(if possible and current not to high)•-75…75V in 1V for Region 5,6,7•“-5…-1V” in 0.05V + “-1…1V” in 0.01V + “1…5V “ in 0.05V for Region 5,6,7


C/V - Bias ring / Guard ring

- LCR:1MHz @ 1V !!! Open correction !!!- Voltage source: |5…450V| or max Volt in 5V < 200V resp. 10V steps > 200V

- !!! Type (p -> ’-’; n -> ’+’) !!!- T = 22 / -20˚C (non-irradiate / irradiate)- Please ramp voltage back in 50V steps-Currentlimit: 50A / 1mA (non-irradiated / irradiated)

Bia

sA

dapt

er

LCR

Met

er

BP

Bia

s R

ing

Gu

ard

Rin

g

H

L

0 -100 -200 -300 -4000.0

20.0p

40.0p

60.0p

80.0p

100.0p


C/V Bias Ring -FZ320P-07-Mpix-1

1-120 2-120 3-100 4-100 5-80 6-80 7-120 8-120 9-100 10-100 11-80 12-80

Ca

pa

cita

nce

[F]

Voltage [V]

Additional Measurement for Irrad.(if possible and current not to high)•-75…75V in 1V for Region 5If there is some influence :•“-5…-1V” in 0.05V + “-1…1V” in 0.01V + “1…5V “ in 0.05V for Region 5,6,7 and also first measurement for Region 6,7


Inter pixel capacitance

“Cint”

- LCR:1MHz @ 1V !!!Open correction !!!- Voltage source: |5…500V| or maximum voltage before break

in 5V steps <= 100V; 10V steps for > 100V

!!! Type (p -> ’-’; n -> ’+’) !!!-T = 22 / -20˚C (non-irradiated / irradiated)-Currentlimit: 50A / 1mA (non-irradiated / irradiated)-Ramp voltage back in 50V steps

LCR

Met

er

BP

Bia

s R

ing

H

LGuard Ring

0 100 200 300 400 5000.0

50.0f

100.0f


1-120 2-120 3-100 4-100 5-80 6-80 7-120 8-120 9-100 10-100 11-80 12-80

Cint

- E100N-03-Mpix-2

Ca

pa

cita

nce

[F]

Voltage [V]

Additional Measurement for Irrad.(if possible and current not to high)•-75…75V in 1V for Region 5 for one PixelIf there is some influence :•“-5…-1V” in 0.05V + “-1…1V” in 0.01V + “1…5V “ in 0.05V for Region 5,6,7 and also first measurement for Region 6,7


- Bias Voltage: 500V or maximum voltage before break

- !!! Type (p->’-’; n->’+’) !!!- Voltage source: -2.5…2.5V in 0.25V steps-T = 22 / -20˚C (non irradiated / irradiated)-Currentlimit: 50A / 1mA (non-irradiated / irradiated)

VDC

BP

A

Bias Ring

Guard Ring

DC-PADs

H

Inter pixel Resistance

“Rint”

-2 -1 0 1 2

0

20p


1-120 2-120 3-100 4-100 5-80 6-80 7-120 8-120 9-100 10-100 11-80 12-80

Voltage [V]

Rint

- E50Y-01-Mpix-1

Cu

rre

nt [

A]


I/V – DC-Pad “I3Pixel”- Voltage source: 0…(700)1000V for (120;200um)320um thickness; 300/500V

for 100 and 50 um [OR maximum Voltage before break] in 1V steps < 10V, 5V steps 10…100V, 10V steps >100V

- !!!Type (p -> ’-’; n -> ’+’)- T = 22 / -20˚C (non irradiated / irradiated)- Currentlimit: 50A / 1mA (non-irradiated / irradiated)

Bia

s R

ing

A

DC

-PA

Ds

BP

Gu

ard

Rin

g

0 100 200 300 400 500 6000

100p

200p

300p

400p

500p


1-120 2-120 3-100 4-100 5-80 6-80 7-120 8-120 9-100 10-100 11-80 12-80

Itotal

for 3 Pixel

M200N-10-Mpix-1C

urr

en

t [A

]

Voltage [V]

Additional Measurement for Irrad.(if possible and current not to high)•-75…75V in 1V for Region 5,6,7•“-5…-1V” in 0.05V + “-1…1V” in 0.01V + “1…5V “ in 0.05V for Region 5,6,7


C/V – DC-Pad “C3Pixel”

- LCR:1MHz @ 1V !!! Open correction !!!- Voltage source: |5…450V| or max voltage in 5V < 200V resp. 10V steps > 200V- !!! Type (p -> ’-’; n -> ’+’) !!!- T = 22 / -20˚C (non irradiated / irradiated)- Ramp voltage back in 50V steps

Bia

sA

dapt

er

LCR

Met

erBP

Gu

ard

Rin

g

L

H

Bia

s R

ing

0 100 200 300 4000.0

500.0f

1.0p

1.5p


1-120 2-120 3-100 4-100 5-80 6-80 7-120 8-120 9-100 10-100 11-80 12-80

Ctotal

for 3 Pixel -

E100P-03-Mpix-1

Ca

pa

cita

nce

[F]

Voltage [V]

Additional Measurement for Irrad.(if possible and current not to high)•-75…75V in 1V for Region 5If there is some influence :•“-5…-1V” in 0.05V + “-1…1V” in 0.01V + “1…5V “ in 0.05V for Region 5,6,7And also first measurement for Region 6,7


RBias “Poly silicon”- Bias Voltage: 500V !!! Type (p -> ’-’; n -> ’+’) !!! or maximum voltage before break- Voltage source: - 2.5…2.5V in 0.25V steps- T = 22 / -20˚C (non irradiated / irradiated)- Rbias : = V/(Imeas(V) – Ileak(0V) )

-2 -1 0 1 2-1µ

-500n

0

500n

1µ

Poly Silicon 2-120 4-100 6-80 8-120 10-100 12-80

RBias

- M200P-07-Mpix-2

Cu

rre

nt [

A]

Voltage [V]

VD

C

SampleChuck

BP

Bia

s R

ing

A

DC

-PA

D

Gu

ard

Rin

g

H Lin

Hout

Additional Measurement for Irrad.(if possible and current not to high)Check for Region 5: +50V and -50V bias voltage--- if no difference: Its ok; if not: Contact supervisor

Rbias

”Punch Through”

I

RPT

U

VD

C

SampleChuck

BP

Bia

s R

ing

PA

D

Gu

ard

Rin

g

Internal voltage from K2410

1E-9 1E-8 1E-7 1E-6

106

107

108

Re

sist

an

ce [O

hm

]

Current [A]

Bias Voltage 300V 100V 5V

Punch through resistance E100N-03-Mpix-2

- Bias Voltage: 500V or maximum voltage before break

- !!! Type (p -> ’-’; n -> ’+’) !!! - T = 22 / -20˚C (non irradiated / irradiated)- Methode1: Make voltage scan and find break; max 50V! Begin with voltage ramp 5V before break in 100mV steps- Methode2: Current source: 50, 100, 200, 500p/nA + 1uA

RPT

VD

C

SampleChuck

BP

Bia

s R

ing

PA

D

Gu

ard

Rin

gA

Additional Measurement for Irrad.(if possible and current not to high)Check for Region 5: +50V and -50V bias voltage--- if no difference: Its ok; if not: Contact supervisor

L

Rbias

”Punch Through revers”- Bias Voltage: 500V or maximum voltage before break

- !!! Type (p -> ’-’; n -> ’+’) !!! - Make voltage scan and find break; max 50V!- Begin with voltage ramp 5V before break in 100mV

steps Don’t take to less steps, there are needed for fitting!

RPT

VD

C

SampleChuck

BP

Bia

s R

ing

Gu

ard

Rin

g

A Setup 1

A

-15 -10 -5 0 5 10 15

0.0

1.0n

2.0n Overview Scan

Current \

A

Voltage \ V

RPt: overview 7-120

Pinhole- 10V between AC & DC- Bias Voltage: 500V or maximum voltage before break!!! Type (p -> ’-’; n -> ’+’) !!!- T = 22 / -20˚C (non irradiated / irradiated)Pinole I= >200pA

VDC

BP

A

Bias Ring

Guard Ring

AC

DC

Coupling Capacitance- LCR: 100Hz @ 1V !!! Open correction !!!- Bias Voltage: 500V or maximum voltage before break!!! Type (p -> ’-’; n -> ’+’) !!!- T = 22 / -20˚C (non irradiated / irradiated)

LCR

Met

er

BP

Bia

s R

ing

H

LGuard Ring

AC

DC

12 11 10 9 8 7 6 5 4 123

12 1

Pixel 32…1

8

Line

1

N S

E

W

Examples and disciptions for measurements On pixel and strip sensors.

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Transcript of Examples and disciptions for measurements On pixel and strip sensors.