EUVL Exposure Tools for HVM: Status and Outlook

Igor Fomenkov, ASML Fellow

ASML, Cymer, San Diego CA USA

June 16th, 2016 | EUVL Workshop 2016, Berkeley, CA

Public

OutlineSlide 2

• NXE3300 and NXE3350B progress and status

• Roadmap, Layout, Performance

• Imaging, Overlay, Defectivity

• EUV pellicle status

• EUV source architecture and performance

• EUV source power scaling

• EUV LPP technologies

• Pre-pulse technology

• EUV source drive laser

• Droplet generator: performance, availability

• Collector: protection, lifetime

• Summary

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EUV technology roadmap, source architecture and performance

Public

DRAMLogic 55 WpH 125 WpH 185 WpH145 WpH

NXE:3300B

NXE:3350B

NXE:3450C

High NA

7

3.0/5.0 nm

1.4/<2.0 nm

7.0 nm

2.5 nm

DCO/MMO OPO

110 nm

60 nm

Focus

Slide 4

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NXE extension roadmap to optimize capital efficiency

1.0/<1.4 nm 1.5 nm<40 nm

1.5/2.5 nm 3.5 nm70 nm

1.2/<1.7 nm 2.0 nm50 nm

R&D

D1M

D1L

SNEP 3350B

NXE:3400B5

<D1L

3.x

20% PFR illuminator

2~2.5

Products under study

D1H

2017

2019

2015

2021

2013

1st

Shipment

22 nm

13 nm

<8 nm

16 nm

13 nm

Half

pitch

UVLS

OFP 3350B3400B

UVLS – Mk2

SMASH – MkX

500W source

Anamorphic lens

Stages, handlers

250W LPP

350W LPP

Lens thermal

NXE:3350B: 2x overlay improvement at 16nm resolutionSupporting 7nm logic, ~15nm DRAM requirements Public

Slide 5

Resolution 16nm

Full wafer

CDU< 1.3nm

DCO < 1.5nm

MMO < 2.5nm

Focus

control< 70nm

Productivity≥ 125

WPH

Overlay

Imaging/Focus

Productivity

Reticle StageBetter thermal control

increased servo bandwidth

Projection OpticsHigher lens transmission improved

aberrations and distortion

Off-Axis Illuminator

FlexPupil

Overlay set upSet-up and modeling

improvements

SMASH sensorImproved alignment

sensor

Spotless NXEAutomated wafer table

cleaning

New UV level

sensor

Wafer StageImproved thermal

control

Improved air mounts

Productivity, Availability, Source Power

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>405k wafers exposed on NXE:3300B at customer sitesCurrently 8 systems running in the field

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Slide 7

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tal n

um

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afe

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osed

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Demonstrated 85 WPH on NXE:3350BAchieved with 125W configuration

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Slide 8

NXE:3300B at customers

NXE:3350B

ASML factory

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2014 Q1 2014 Q2 2014 Q3 2014 Q4 2015 Q3 2015 Q4 2016 Q2

Wafe

rs p

er

ho

ur

NXE:3350B

at customers

NXE:3350B ATP test: 26x33mm2, 96 fields, 20mJ/cm2

NXE:3350B: 125W settings qualified being implemented at the customer

Mean pulse energy at

Intermediate Focus ~3mJ

EUV power at

Intermediate Focus 125W

Energy control Overhead ~20%

Public

Slide 9

Progress in source power supporting productivity

roadmap to >125 WPHPublic

Slide 10

2008 2010 2012 2014 20160

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3100 NOMO (delivered)

3100 MOPA (not shipped)

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3400 MOPA+PP (development)

Dose c

ontr

olle

d E

UV

pow

er

(W)

Year

210W with dose in specifications

obtained on development sourceCE~5.5%

7685 85

75

83

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System A System B System C System D System E

Availa

bili

ty [

%]

Availability SD USD Availability

Three customer systems have achieved 80% availabilityBest four-week average on systems in 80W configuration Slide 11

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Uptime = productive time + standby time + engineering time

SD: Scheduled down • USD: Unscheduled down

+X% indicates change from Q4 2015

+15% +5% +13%+5%

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ctiv

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[WP

D]

NXE:3300B multiple customers exposed >1,000 WPD;NXE:3350B exposed 1,368 WPD at ASML factory

• WPD: maximum number of wafers exposed in a 24 hour period

• Each bar represents an individual system

NXE:3350B at ASML factory

• NXE:3350B with S2 source config. at ~80W EUV power.

• TPT job: 26x33mm field @ 20 mJ/cm2, full wafer coverage (96 fields)

NXE:3300B at customers

Best full week result

Public

Slide 12

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ctiv

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D]

Best single day results

NXE:3350B at ASML

factory

1,000 WPD

Scheduled

maintenance

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Source power, availability, productivity summaryStatus April 2016

• 80W configuration rolled out to customer sites, 125W configuration qualified

• 210W of dose-controlled EUV power demonstrated at ASML

Source power

• Three customer systems achieved more than 80% average availability over four weeks

• While overall average availability has increased, consistency still needs to be further improved

Availability

• More than 1000 wafers per day exposed on NXE:3300B at customer sites, further improved to more than 1,350 wafers per day on NXE:3350B at ASML

• In a manufacturing readiness tests at a customer site an average of 800 wafers per day over two weeks was achieved

Productivity

Slide 13

Imaging, Overlay, Defectivity

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ArFi LE3

(triple patterning)EUV Single Exposure

Quasar illumination

Pupil Fill ratio 20%

In cooperation with IMEC

Dose: 20 mJ/cm2

Slide 15

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48nm pitch / 24nm CD Quasar,

Pupil Fill ratio 20%

32nm pitch / 16nm CD

EUV single exposure replaces immersion multiple patterning2D-Metal at 32nm pitch achieved with Quasar illumination

NXE:3350B imaging: 16nm dense lines and 20nm iso space

consistently achieve <1.0nm Full Wafer CDU

16nm

dense lin

es

20nm

iso

sp

ace

Tested with new ATP – 0mm field spacing and 15x9 grid

Slide 16

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Progress resist materials: towards 16nm resolution at 125 WPH19% EL, 4.4nm LWR @18.5mJ/cm2. Also 13nm resolved with 17% EL and 4.2nm LWR @31mJ/cm2

NXE:3350B 16nm Horizontal Dense lines/spaces 13nm Horizontal Dense lines/spaces

Reference CAR

New formulation

CAR

New Inpria resist

(NTI non-CAR) CAR

New Inpria resist

(NTI non-CAR)

SEM image

@BE/BF

Dose 40 mJ/cm2 25 mJ/cm2 18.5 mJ/cm2 ~40 mJ/cm2 31 mJ/cm2

Exposure Latitude 16 % 16 % 19 % - 17 %

DoF 145 nm 100 nm 125 nm - 150 nm

LWR 4.6 nm 5.2 nm 4.4 nm 4.5 nm 4.2 nm

LWR = Line Width Roughness

DoF = Depth of Focus

EL = Exposure Latitude

BE/BF = Best Energy/Best Focus

CAR = Chemically Amplified Resist

Slide 17

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NXE:3350B overlay and focus performanceWell in specification due to HW improvement and new calibrations

Dedicated chuck overlay [nm] Matched machine overlay [nm] Focus uniformity [nm]

Slide 18

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NXE:3350B matched machine overlay with NXT:1980Di <2.8nm

Overlay 9

9.7

% (

nm

)

Wafer number

Lot (x: 2.8nm, y: 2.5nm)

Slide 19

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Slide 20

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Front-side reticle defectivity: 10x reduction/year realized

2010 2011 2012 2013 2014 2015

0.0001

0.001

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0.1

1

10

100

NXE:3100

NXE:3300B

NXE:3350B

Ad

ded

pa

rtic

les

> 9

2n

m p

er

reti

cle

pa

ss

Optimization of flow around reticle stage using new

hardware

Optimized maintenance

sequence to flush out particles

Key improvements

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Imaging, overlay, focus, defectivity summaryStatus April 2016

• NXE:3350B imaging and overlay results for 7nm Logic are good

• 16 nm dense lines and 20 nm iso space consistently achieve full-wafer CDU below 1 nm

Imaging

• NXE:3350B: 2x overlay improvement over NXE:3300B

• Matched-machine overlay below 2.5 nm, focus uniformity below 10 nm

Overlay and focus

• Front-side reticle defectivity: 10x reduction/year realized

Defectivity

Slide 21

EUV Pellicle

Public

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Pellicle film must simultaneously fulfill all key requirementsPolycrystalline silicon based films meet the key requirements

Scanner (imaging) performance

defect free

high transmission

low transmission nonuniformity

Pellicle robustness

chemical

resistance

(EUV+H2)

mechanical

compatibility

thermal

resistance

Slide 23

Slide 24

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NXE Pellicles are being mounted and used in scanners

Prototype pellicle on early integration mounting tooling

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mp

era

ture

[C

]

Source power [W]

Maximum pellicle temperature vs

source power (calculated)

Reference (emiss. ≤0.02)

Coated (emiss. 0.24)

Film stackEquivalent

source power

Sample

survivability

Uncoated 40 W 9/9

Uncoated 125 W 3/5

Coated 125 W 33/33

Heat load test results

Pellicle technology: durability proven to at least 125 W

ASML pellicle

integration Work

Center at our

Veldhoven

production

facilities

Public

Slide 25

* Duration of tests: equivalent with exposure of 1000 wafers

EUV source power scaling

Public

Slide 27

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EUV Source Architecture, Sn LPP MOPA with Pre-pulse

Source Pedestal

Scanner Pedestal

Fab FloorFab Floor

Sub-fab Floor

Scanner

metrology for

source to

scanner

alignment

CO2 system

Tin catch

Vessel

Vanes

Tin Droplet

Generator

Collector

Beam

Tra

nsp

ort

Power Amplifiers PP&MP Seed unit

Inte

rmed

iate

Fo

cu

s U

nit

xz

Collector

On-droplet Gain Optimization

High Power

Seed System

Laser / EUV dose

Controls

High Power

Amplification Chain

Laser Metrology,

MP PP Focusing

3

12

Slide 28

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EUV LPP Source Key Technologies

Slide 29

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Source power and availability drive productivity

Productivity = Throughput(EUV Power) Availability

Source power

from 10 W to > 250 W

Drive laser power from 20 to 40 kW

Conversion efficiency (CE) from 1 to 6%

Dose margin from 50 to 10%

Optical transmission

Source availability

Drive laser reliability

Droplet generator reliability & lifetime

Automation

Collector protection

EUV Power= (CO2 laser power CE transmission)*(1-dose overhead)

Raw EUV power

Technology development work is ongoing to improve all aspects

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MOPA+PP andNXE:3300B Drive

Laser

MOPA+PP HighPower Amplification

Chain

Lase

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Slide 30

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EUV power scaling through 2016

EUV power ~ CO2 power * Conversion Efficiency * (1-Dose Overhead)

CE=0.8%

CE=2.5%

CE=3.5%

CE=5.5%

45%

30% 1

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10%1

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Pre-pulse technology

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Slide 32

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Conversion efficiency: Optimizing pre-pulse to create a

more efficient targetTarget expansion fills main pulse beam waist

Prepulse(low energy)

Mainpulse(high energy)

Target shape changes

from droplet to disk

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Slide 33

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Increased conversion efficiency with Pre-pulse

no PP small disk large disk partial-cloud cloud

Convers

ion e

ffic

iency (

%)

by optimization of target size, shape and density

EUV CE ~6% demonstrated on development platforms

Slide 34

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Plasma scale length (Z) is the key to increase its volume Volume-distributed laser absorption enhances CO2 laser deposition in plasma

Schematic diagram of traditional LPP Hydrodynamic simulation of CO2 Sn LPP

SPIE 2016, 97760K-1, Michael Purvis

“Advances in predictive plasma formation modelling”

laser

n

Te

nc

Corona Energy

transport

Mass flow

Heat, radiation flow

Laser

Laser, e, ions

absorptionablation

EUV

Z

10+

Te Z

ne ni

EUV Source, Drive Laser Development Progress

Public

Slide 36

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CO2 laser power scaling to scale EUV powerEfficient CO2 laser pulse amplification

3300 CO2 drive laser

Throughput, WPH 125 145 185

EUV power (W) 250 350 500

CO2 lase power (kW) 27 30 40

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Slide 37

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CO2 drive laser power scaling

Key technologies:

1. Drive laser with higher power capacity

2. Gain distribution inside amplification chain

3. Mode-matching during beam propagation

4. Isolation between amplifiers

5. Metrology and automation

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Droplet Generator

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Slide 39

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Droplet Generator, Principle of Operation

• Tin is loaded in a vessel & heated above melting point

• Pressure applied by an inert gas

• Tin flows through a filter prior to the nozzle

• Tin jet is modulated by mechanical vibrations

Nozzle

Filter

ModulatorGas

Sn

0 5 10 15 20 25 30-10

-5

0

5

10

Dro

ple

t p

ositio

n, m

Time, sec

140 m 50 m 30 mPressure: 1005 psi Frequency: 30 kHz Diameter: 37 µm Distance: 1357 µm Velocity: 40.7 m/s

Pressure: 1025 psi Frequency: 50 kHz Diameter: 31 µm Distance: 821 µm Velocity: 41.1 m/s

Pressure: 1025 psi Frequency: 500 kHz Diameter: 14 µm Distance: 82 µm Velocity: 40.8 m/s

Pressure: 1005 psi Frequency: 1706 kHz Diameter: 9 µm Distance: 24 µm Velocity: 41.1 m/s

Fig. 1. Images of tin droplets obtained with a 5.5 μm nozzle. The images on the left were obtained in

frequency modulation regime; the image on the right – with a simple sine wave signal. The images

were taken at 300 mm distance from the nozzle.

Short term droplet position stability σ~1m

16 m

Slide 40

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Forces on Droplets during EUV Generation

High EUV power at high repetition rates drives requirements for

higher speed droplets with large space between droplets

Slide 41

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High Speed Droplet Generation

Tin droplets at 80 kHz and at different applied pressures.

Images taken at a distance of 200 mm from the nozzle

Pressure (Speed)

3.5 MPa (26 m/s)

6.9 MPa (40 m/s)

13.8 MPa (58 m/s)

27.6 MPa (84 m/s)

41.4 MPa (104 m/s)

55.2 MPa (121 m/s)

1.5 mm

Slide 42

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5x improvement in Droplet Generator run time demonstratedData based on ASML internal testing; Field qualification started

Bundle 1 DGen (field avg.)

Bundle II DGen (field avg.)

Bundle III DGen (ASML internal)

Bundle III DGen (Beta Test)

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nti

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[Ho

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operational >350hrs

Droplet Generator still

operational >1000hrs

EUV Collector, Lifetime

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Slide 44

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EUV Collector: Normal Incidence

• Ellipsoidal design

• Plasma at first focus

• Power delivered to exposure tool at second focus (intermediate focus)

• 650 mm diameter

• Collection solid angle: 5 sr

• Average reflectivity: > 40%

• Wavelength matching across the entire collection area 5sr Normal Incidence Graded

Multilayer Coated Collector

Slide 45

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Collector Protection

Sn droplet /

plasma

H2 flow

Reaction of H radicals with Sn

to form SnH4, which can be

pumped away.

Sn (s) + 4H (g) SnH4 (g)

• Hydrogen buffer gas causes

deceleration of ions

• Hydrogen flow away from collector

reduces atomic tin deposition rate

Laser beam

IF

Sn

catcher

DG

EUV collector

Temperature controlled

• Vessel with vacuum pumping to

remove hot gas and tin vapor

• Internal hardware to collect micro

particles

Slide 46

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Collector Lifetime on NXE:3300 SourcesUP2 configuration operating at 60-80W

Transmission loss ~0.5%/Gp

• Collector lifetime ~3 months

(~80Gp) on sources in the field

Transmission loss ~0.6%/Gp

• Customer Demo (Q1’16): >100 Gpulse

Slide 47

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250W feasibility proven without increase in protective Hydrogen flowNo rapid collector contamination, allowing stable droplets and >125 w/hr@20 mJ/cm²

~200W dose controlled power

Slide 48

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In-situ collector cleaningEffectiveness of product configuration confirmed

Off-line cleaning using NXE:3300B source

vessel with product configuration hardwareReflectivity restored within 0.8% of original

Cleaning in off-line MOPA Prepulse development vessel

Field collector

cleaned in

NXE:3300 source

vessel test rig

Start End

Start End

Slide 49

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Summary: EUV readyness for volume manufacturing

• 80% source availability capability demonstrated

• Multiple systems demonstrated >1,000 wafers per day

capability, with one system exceeding 1,350 wpd

• Completed qualification of five NXE:3350B, the 4th generation

EUV exposure tool, one system qualified at 75 wph

• 80W configuration operational in the field, 125W

configuration qualification completed

• Excellent NXE:3350B imaging and overlay

performance at> 80W power

• Continuous progress in resist formulation promising towards

enabling 13nm half pitch at high throughput

• 8 NXE:3300B systems operational at customers

SummarySlide 50

Significant progress in EUV power scaling,

- CE is up to 6 %

- Dose-controlled power is up to 210 W

CO2 developments support EUV power scaling,

- Clean (spatial and temporal) amplification of short CO2 laser pulse

- High power seed-table enables CO2 laser power scaling

Significant progress made in Source Availability

- >80% source availability in the field

- >1000 hrs droplet generator runtime

- >100 Gp collector lifetime

Public

Acknowledgements:Slide 51

Public

David Brandt, Daniel Brown, Rob Rafac, Alexander Schafgans, Yezheng Tao, Michael Purvis, Alex Ershov, Georgiy

Vaschenko, Slava Rokitski, Michael Kats, Daniel Riggs, Wayne Dunstan, Michael Varga, Mathew Abraham, Matthew

Graham

Cymer LLC, 17075 Thornmint Ct, San Diego, CA 92127 USA

Rudy Peeters, Daniel Smith, Uwe Stamm, Sjoerd Lok, Arthur Minnaert, Martijn van Noordenburg, Joerg Mallmann,

David Ockwell, Henk Meijer, Judon Stoeldraijer, Christian Wagner, Carmen Zoldesi, Eelco van Setten, Jo Finders,

Koen de Peuter, Chris de Ruijter, Milos Popadic, Roger Huang, Roderik van Es, Marcel Beckers, Hans Meiling

ASML Netherlands B.V., De Run 6501, 5504 DR Veldhoven, The Netherlands

Acknowledgements:Slide 52

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