EUV Materials SolutionRadiation chemistry Photochemistry ArF imm. EUV 1: Photon absorption 2:...
Transcript of EUV Materials SolutionRadiation chemistry Photochemistry ArF imm. EUV 1: Photon absorption 2:...
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EUV Materials Solution
Yoshi Hishiro
Director, R&D
JSR Micro Inc.
June 14, 2018
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Contents
• What is Difference between EUV and ArF?
• EUV Material Development
–Chemically amplified resist(CAR)
– Sensitizer UL
–Metal resist
• EUV Material Production
• Next Generation
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Contents
• What is Difference between EUV and ArF?
• EUV Material Development
–Chemically amplified resist(CAR)
– Sensitizer UL
–Metal resist
• EUV Material Production
• Next Generation
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What is Difference between EUV and ArF Technology from Material Point of View?
Exposure(Optical image)
Acid generation
Chemical amplify reaction
Development Resist pattern
Photo-resist patterning process
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What is Difference between EUV and ArF Technology from Material Point of View?
EUV92eV
ArF imm.6.4eV
ArF6.4eV
KrF5.0eV
Radiation chemistry
Photochemistry
ArF imm. EUV1: Photon absorption2: Electron generation3: Acid generation
Photon Photon Atom
AtomElectrone-
Photo-acid generator
1: Photon absorption2: Acid generation
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How to Improve Resist Performance from View Point of Chemistry?
Process• Exposure• Acid generation
• Chemical amplify reaction
• Development
Key chemical
• Absorption• Electron
generation• Acid generation
• Acid diffusion control
• Active energy of protecting group
• Uniformity of resist component
• Dissolution rate• Dissolution
contrast
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Contents
• What is Difference between EUV and ArF?
• EUV Material Development
–Chemically amplified resist(CAR)
– Sensitizer UL
–Metal resist
• EUV Material Production
• Next Generation
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Resist Development for CH- Pitch 44nm -
Sensitivity: 36.8mJ/cm2
LCDU: 3.46nmSensitivity: 27.2mJ/cm2
LCDU: 3.48nm
Current PAG/PolymerNew short ADL PAG with
New high Tg polymer
26% doseReduction
Development of new PAG/Resin enables breakthrough performance
Exposed on NXE3300B
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Resist Development for LS- Pitch 28 nm- Exposed on NXE3300B
Process window
Pitch 28nm can be resolved with reasonable LWR and process window.
Sensitivity: 55mJ/cm2
LWR: 3.8nm
Best dose / best focus
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Etch Transfer with JSR Tri-layer Stack-Challenging for 30nm Pitch etch transfer to dielectric film-
Post Litho
54mJ/cm2,
LWR=3.7nm
Post SiHM Open
55mJ/cm2,
LWR=3.1nm
Post CHM Open
55mJ/cm2,
LWR=2.7nm
Post Substrate Open55mJ/cm2LWR=2.9nm
JSR CHM
JSR SiHMJSR Resist
30 nm Pitch Etch transfer have been succeed with JSR tri-layer stack
Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII
https://doi.org/10.1117/12.2258164
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Sensitizer Under Layer for LS- 32 nm Pitch -
Resist sensitivity is improved by applying “Sensitizer Under layer”
The possibility of 32 nm Pitch @ under 10mJ was observed.
Sensitizer UL
e-e- e-
e-e-
Resist / Sensitizer ULResist / Organic ULResist / Sensitizer UL
(High bake temp. applied for sensitizer
UL)Sens. 28.5mJ/cm2LWR 5.7nm
Sens. 15.5mJ/cm2LWR 7.1nm
Sens. <9mJ/cm2LWR >8nm
Resist
EUV
Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII
https://doi.org/10.1117/12.2258164
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Sensitizer Under Layer for CH- 44 nm Pitch -
Sensitizer UL
e-e- e-
e-e- Resist
EUV
Sensitization was confirmed on CH and etch transfer have been demonstrated.
Resiston Sensitizer UL
Resiston Organic UL
Post Sensitizer UL open and resist strip
Sens. 39.0mJ/cm2LCDU 3.8nm
Sens. 30.8mJ/cm2LCDU 3.9nm
Sens. 30.8mJ/cm2LCDU 4.0nm
Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII
https://doi.org/10.1117/12.2258164
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Motivation of Metal Nano Particle Resist
EU
V P
hoto
abso
rption
(cm
2/g
m)
H C
OZn
Zr
In
Hf
Atomic Number
Potential Benefit of Metal resist• High sensitivity• High etching selectivity
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Metal Nano Particle Resist Development
54 nm Pitch
2017
54 nm Pitch 38 nm Pitch
Sens. 56.0mJ/cm2LWR 4.6nm
36 nm Pitch
52.5mJ/cm27.2nm
34 nm Pitch
56.0mJ/cm27.4nm
20162015
Resolution improvement was achieved by new Metal nano particle resist
Exposed on NXE3300B
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Contents
• What is Difference between EUV and ArF?
• EUV Material Development
–Chemically amplified resist(CAR)
– Sensitizer UL
–Metal resist
• EUV Material Production
• Next Generation
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EUV Ready for the INDUSTRY- EUV Resist Manufacturing & Qualification Center-
Manufacturing Technologies(Production and QC analytical)• Dedicated Manufacturing Lines
and Analytical Testing Capability for EUV resists
Application Equipment (QC, functional testing.)• ASML NXE:3300 full-field EUV
scanner• TEL Lithius Pro-Z EUV track and
more…
Facility located in the existing JSR Micro NV plant.
JSR partnered with imec enabling manufacturing and quality control of EUV lithography materials for the semiconductor industry.
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Concept of EUV RMQC- Foundry for EUV Photoresists -
Proximity is one of the advantages of EUV RMQC
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Contents
• What is Difference between EUV and ArF?
• EUV Material Development
–Chemically amplified resist(CAR)
– Sensitizer UL
–Metal resist
• EUV Material Production
• Next Generation
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What is Next Generation?
TechnologyWavelengt
h/nm
Resolution/nm
NA
g line 436 145 0.9
I line 365 122 0.9
KrF 248 83 0.9
ArF 193 64 0.9
ArF immersion 193 45 1.3
EUV (NA 0.33) 13.5 12 0.33
EUV (NA 0.5) 13.5 8 0.5
6.7 nm wavelength
6.7 4 0.5
Resolution=λ
n sinΘk1
λ
NAk1
k1=0.3
=
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Sub-10 nm Resolution
For sub 10nm resolution, new material development is required.
Chris A et. al , EUVL Symposium 2011
Need to consider polymer size Need to consider resist absorption for 6.7nm wavelength
Mw 8000Polymer size : 5-7nm
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Summary
• Material solutions for EUV lithography
– Chemically amplified resist(CAR)
– Sensitizer under layer
– Nano particle resist
• EUV material production
– EUV RMQC
• Material development for sub 10 nm
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