EUV Interference Lithographyieuvi.org/TWG/Resist/2007/071101/EUVIL_PSI_Sapporo_07_4.pdf · EUV...
Transcript of EUV Interference Lithographyieuvi.org/TWG/Resist/2007/071101/EUVIL_PSI_Sapporo_07_4.pdf · EUV...
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EUV Resist TWG, Sapporo 2007
EUV Interference Lithographyat PSI
Harun Solak
Laboratory for Micro and Nanotechnology, Paul Scherrer Institute, Switzerland
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EUV Resist TWG, Sapporo 2007
EUV-IL Exposure System
beamlineExposure chamber • Sample stage for 4 – 8” wafers
• Stage travel range 80x80 mm
• Class 1000 cleanroom
• Chemically filtered air (amines)
• PEB next to exposure tool• Sample-coating/development in
separate cleanroom
• Throughput: ~1 wafer/hour (50-100 doses)
• NO outgassing requirement
• Constant beam current at SLS (top-up), stable and constant illumination• Illumination flux measured before exposure monitored afterwards
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EUV Resist TWG, Sapporo 2007
The Interferometer
100 nm L/S mask
• Based on transmission diffraction gratings patterned on SiN membranes • Diffraction gratings made in-house with e-beam lithography or EUV-IL• No alignment – no focus same image each time• High-contrast as deduced from resist performance
• Line/space patterns • Square hole array
Diffraction Gratings2-Beam Interference 4-Beam Interference
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EUV Resist TWG, Sapporo 2007
EUVIL Test Results with PMMA
50 nm half pitch 45 nm 40 nm
35 nm 30 nm
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EUV Resist TWG, Sapporo 2007
EUVIL Test Results with HSQ
50 nm half pitch 45 nm 40 nm
35 nm 30 nm 20 nm
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EUV Resist TWG, Sapporo 2007
Calixarene20 nm
TEBN-1 Tokuyama CoFilm thickness: 20-30 nm Development: IPA, 30 s
12.5 nm16.25 nm
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EUV Resist TWG, Sapporo 2007
Mask Layout• 25-50 nm L/S printed simultaneously
• 800 μm long cleavable lines
• Pattern width: 50-100 μm
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EUV Resist TWG, Sapporo 2007
Pattern on Wafer
45 nm
40 nm
35 nm
30 nm
Low magnification SEM image of pattern in HSQ
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EUV Resist TWG, Sapporo 2007
EUVIL Test Results with HSQ
• Low-magnification image of 30 nm L/S pattern
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EUV Resist TWG, Sapporo 2007
Multiple-beam EUV-IL
24.7 nm HP - PMMA 21.2 nm HP - HSQ 17.1 nm HP - HSQ
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EUV Resist TWG, Sapporo 2007
Dot Position and Size Uniformity
A
BA’B’
average (nm) stdev (1 sigma, nm) stdev/averagedirection A, dot-to-dot distance 59.9 0.5 0.9%direction B, dot-to-dot distance 59.9 0.5 0.8%direction A', dot-to-dot distance 42.7 0.6 1.4%direction B', dot-to-dot distance 42.0 0.5 1.3%dot size in plane 25.8 0.4 1.7%
Analysis by Justin Hu, Kim Y. Lee, David Kuo, Dieter Weller, Seagate Technology
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EUV Resist TWG, Sapporo 2007
Other Resist DevelopmentBlock-copolymersP. Nealey, UW
20 nm
16 nm
ZnOPSI
Nano-graftingPSI
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EUV Resist TWG, Sapporo 2007
Access
• Limited number of shifts are available
• Resist receiving, storage, coating, exposure. development, shipping
~ USD 6500 /shift
• State of the art SEM available for top-down imaging (fee)
• Schedule made for 6-month periods (Jan-Jun, Jul-Dec)
• Contact: [email protected]
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EUV Resist TWG, Sapporo 2007
Next Generation EUV-IL at PSI
• Full-time beamline with undulator source under construction
• Capacity increase 6x
• Processing equipment (coating, development) near exposure tool
• Completion in 2009
• Open for long-term contracts and shift access (outgassing?)