EUV high NA anamorphic imagingeuvlsymposium.lbl.gov/pdf/2016/Oral/Wed_S2-3.pdf2016 International...
Transcript of EUV high NA anamorphic imagingeuvlsymposium.lbl.gov/pdf/2016/Oral/Wed_S2-3.pdf2016 International...
![Page 1: EUV high NA anamorphic imagingeuvlsymposium.lbl.gov/pdf/2016/Oral/Wed_S2-3.pdf2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan 0% 10% 20% 30% 40% 50%](https://reader033.fdocuments.in/reader033/viewer/2022043012/5fac08452b659423eb31e091/html5/thumbnails/1.jpg)
2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan
EUV high NA anamorphic imaging
It’s all about the angles Oct-26-2016 Eelco van Setten, Gerardo Bottiglieri, Thorsten Last, Alberto Colina, Jan Lubkoll, Gijsbert Rispens, Jan van Schoot
2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan
![Page 2: EUV high NA anamorphic imagingeuvlsymposium.lbl.gov/pdf/2016/Oral/Wed_S2-3.pdf2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan 0% 10% 20% 30% 40% 50%](https://reader033.fdocuments.in/reader033/viewer/2022043012/5fac08452b659423eb31e091/html5/thumbnails/2.jpg)
2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan
EUV: it’s all about the angles High-NA comes with large angles
ML reflection MoSi Multilayer
Slide 2
Public
NA=0.55
![Page 3: EUV high NA anamorphic imagingeuvlsymposium.lbl.gov/pdf/2016/Oral/Wed_S2-3.pdf2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan 0% 10% 20% 30% 40% 50%](https://reader033.fdocuments.in/reader033/viewer/2022043012/5fac08452b659423eb31e091/html5/thumbnails/3.jpg)
2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan
0%
10%
20%
30%
40%
50%
60%
70%
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Mu
ltila
yer
Ref
lect
ivit
y [%
]
Angle of incidence on the mask [deg]
Multilayer
Slide 3
Anamorphic magnification solves the angular spread at the mask Public
Y 0.33NA – Mag 4x
X
Multilayer Reflectivity
![Page 4: EUV high NA anamorphic imagingeuvlsymposium.lbl.gov/pdf/2016/Oral/Wed_S2-3.pdf2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan 0% 10% 20% 30% 40% 50%](https://reader033.fdocuments.in/reader033/viewer/2022043012/5fac08452b659423eb31e091/html5/thumbnails/4.jpg)
2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan
0%
10%
20%
30%
40%
50%
60%
70%
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Mu
ltila
yer
Ref
lect
ivit
y [%
]
Angle of incidence on the mask [deg]
Multilayer
Slide 4
Anamorphic magnification solves the angular spread at the mask Public
Y 0.33NA – Mag 4x
X
Y - 4x
0.55NA – Mag 4x
X
Multilayer Reflectivity
![Page 5: EUV high NA anamorphic imagingeuvlsymposium.lbl.gov/pdf/2016/Oral/Wed_S2-3.pdf2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan 0% 10% 20% 30% 40% 50%](https://reader033.fdocuments.in/reader033/viewer/2022043012/5fac08452b659423eb31e091/html5/thumbnails/5.jpg)
2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan
0%
10%
20%
30%
40%
50%
60%
70%
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Mu
ltila
yer
Ref
lect
ivit
y [%
]
Angle of incidence on the mask [deg]
Multilayer
Slide 5
Anamorphic magnification solves the angular spread at the mask Public
Y 0.33NA – Mag 4x
X
Y - 4x
0.55NA – Mag 4x
X
Y - 8x
0.55NA – Mag 4x/8x
Multilayer Reflectivity
![Page 6: EUV high NA anamorphic imagingeuvlsymposium.lbl.gov/pdf/2016/Oral/Wed_S2-3.pdf2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan 0% 10% 20% 30% 40% 50%](https://reader033.fdocuments.in/reader033/viewer/2022043012/5fac08452b659423eb31e091/html5/thumbnails/6.jpg)
2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan
0%
10%
20%
30%
40%
50%
60%
70%
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Mu
ltila
yer
Ref
lect
ivit
y [%
]Angle of incidence on the mask [deg]
Multilayer
Slide 6
Anamorphic magnification: Circular exit pupil requires elliptical entrance pupil
Anamorphic
MAG 4x/8x
x
y
Public
Entrance pupil
![Page 7: EUV high NA anamorphic imagingeuvlsymposium.lbl.gov/pdf/2016/Oral/Wed_S2-3.pdf2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan 0% 10% 20% 30% 40% 50%](https://reader033.fdocuments.in/reader033/viewer/2022043012/5fac08452b659423eb31e091/html5/thumbnails/7.jpg)
2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan
Slide 7
Anamorphic magnification: Circular exit pupil requires elliptical entrance pupil Public
POB
MAG 4x/8x At reticle At wafer
![Page 8: EUV high NA anamorphic imagingeuvlsymposium.lbl.gov/pdf/2016/Oral/Wed_S2-3.pdf2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan 0% 10% 20% 30% 40% 50%](https://reader033.fdocuments.in/reader033/viewer/2022043012/5fac08452b659423eb31e091/html5/thumbnails/8.jpg)
2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan
Slide 8
Public
Contents
Mask
Central obscuration
Contrast
Summary & conclusions
![Page 9: EUV high NA anamorphic imagingeuvlsymposium.lbl.gov/pdf/2016/Oral/Wed_S2-3.pdf2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan 0% 10% 20% 30% 40% 50%](https://reader033.fdocuments.in/reader033/viewer/2022043012/5fac08452b659423eb31e091/html5/thumbnails/9.jpg)
2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan
Main consequences: Half field imaging, mask pattern is
stretched in scanning direction
x
y
MAG 4x in x
MAG 8x in y
Note: rectangular slit shown for illustration purposes
Slide 9
Public
Anamorphic masks:
• Image field half of current size
• Mask pattern stretched
Feature distortions on mask
• 4x-direction will drive mask
requirements (CD, registration
and defectivity)
![Page 10: EUV high NA anamorphic imagingeuvlsymposium.lbl.gov/pdf/2016/Oral/Wed_S2-3.pdf2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan 0% 10% 20% 30% 40% 50%](https://reader033.fdocuments.in/reader033/viewer/2022043012/5fac08452b659423eb31e091/html5/thumbnails/10.jpg)
2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan
Slide 10
• Traditional Mask Error Factor (MEF) is normalized with the magnification:
𝑀𝐸𝐹 =∆𝐶𝐷𝑤𝑎𝑓𝑒𝑟
∆𝐶𝐷𝑚𝑎𝑠𝑘𝑚𝑎𝑔
• Not convenient for anamorphic Same MEF corresponds to different mask
CD tolerance in X and Y
• A new Mask Error Factor, MEF*, is defined:
𝑀𝐸𝐹∗ =∆𝐶𝐷𝑤𝑎𝑓𝑒𝑟
∆𝐶𝐷𝑚𝑎𝑠𝑘
1nm mask CD error gives ‘MEF*’ nm wafer CD error
New MEF definition to handle difference in X,Y-
magnification Public
![Page 11: EUV high NA anamorphic imagingeuvlsymposium.lbl.gov/pdf/2016/Oral/Wed_S2-3.pdf2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan 0% 10% 20% 30% 40% 50%](https://reader033.fdocuments.in/reader033/viewer/2022043012/5fac08452b659423eb31e091/html5/thumbnails/11.jpg)
2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan
@ mask @ wafer
1nm
mef* xx
mef* yx
d
2 d
d/4
d/4
Slide 11
2D features experience strong X-Y interaction for mask
CD errors Public
![Page 12: EUV high NA anamorphic imagingeuvlsymposium.lbl.gov/pdf/2016/Oral/Wed_S2-3.pdf2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan 0% 10% 20% 30% 40% 50%](https://reader033.fdocuments.in/reader033/viewer/2022043012/5fac08452b659423eb31e091/html5/thumbnails/12.jpg)
2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan
@ mask @ wafer
1nm
mef* xx
mef* yx
d
2 d
d/4
d/4
Slide 12
2D features experience strong X-Y interaction for mask
CD errors Public
@ mask @ wafer
mef* xy
mef* yy
1nm
![Page 13: EUV high NA anamorphic imagingeuvlsymposium.lbl.gov/pdf/2016/Oral/Wed_S2-3.pdf2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan 0% 10% 20% 30% 40% 50%](https://reader033.fdocuments.in/reader033/viewer/2022043012/5fac08452b659423eb31e091/html5/thumbnails/13.jpg)
2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan
@ mask @ wafer
1nm
mef* xx
mef* yx
d
2 d
d/4
d/4
Slide 13
2D features experience strong X-Y interaction for mask
CD errors Public
@ mask @ wafer
mef* xy
mef* yy
1nm
@ mask @ wafer
MEF* X
( mef* xx + mef* xy )
MEF* Y
( mef* yy + mef* yx )
1nm
1nm
![Page 14: EUV high NA anamorphic imagingeuvlsymposium.lbl.gov/pdf/2016/Oral/Wed_S2-3.pdf2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan 0% 10% 20% 30% 40% 50%](https://reader033.fdocuments.in/reader033/viewer/2022043012/5fac08452b659423eb31e091/html5/thumbnails/14.jpg)
2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan
Slide 14
contributors
@ mask @ wafer
1nm
1nm
Mask error in X-direction dominates error on wafer in
both directions
MEF* Y
( mef* yy + mef* yx )
MEF* X
( mef* xx + mef* xy )
Public
Mask error in X-direction
![Page 15: EUV high NA anamorphic imagingeuvlsymposium.lbl.gov/pdf/2016/Oral/Wed_S2-3.pdf2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan 0% 10% 20% 30% 40% 50%](https://reader033.fdocuments.in/reader033/viewer/2022043012/5fac08452b659423eb31e091/html5/thumbnails/15.jpg)
2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan
Slide 15
Public
Contents
Mask
Central obscuration
Contrast
Summary & conclusions
![Page 16: EUV high NA anamorphic imagingeuvlsymposium.lbl.gov/pdf/2016/Oral/Wed_S2-3.pdf2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan 0% 10% 20% 30% 40% 50%](https://reader033.fdocuments.in/reader033/viewer/2022043012/5fac08452b659423eb31e091/html5/thumbnails/16.jpg)
2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan
Standard EUV coatings cannot
handle these large angles
Substrate
Slide 16
Public
Multi-layers set limits to angles & angular spread Angles must be reduced for high-NA optics
We have to limit the
angles on the mirror
we need another trick!
![Page 17: EUV high NA anamorphic imagingeuvlsymposium.lbl.gov/pdf/2016/Oral/Wed_S2-3.pdf2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan 0% 10% 20% 30% 40% 50%](https://reader033.fdocuments.in/reader033/viewer/2022043012/5fac08452b659423eb31e091/html5/thumbnails/17.jpg)
2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan
Angles and
angular spread
decrease
ob
scu
red
Slide 17
Public
There is a solution: We drill a hole into the mirror. Smaller angles enable transmission gain vs non-obscured NA 0.33
un
ob
scu
red
And even better:
The smaller angular
range increases the
transmission
![Page 18: EUV high NA anamorphic imagingeuvlsymposium.lbl.gov/pdf/2016/Oral/Wed_S2-3.pdf2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan 0% 10% 20% 30% 40% 50%](https://reader033.fdocuments.in/reader033/viewer/2022043012/5fac08452b659423eb31e091/html5/thumbnails/18.jpg)
2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan
Slide 18
Confidential
Obscuration may result in:
- application dependent
contrast loss
- Non-telecentricity
Obscuration radius limited to
20% of the pupil radius
( = 4% of the pupil area )
Obscuration comes at expense of blocking parts of
diffraction orders
![Page 19: EUV high NA anamorphic imagingeuvlsymposium.lbl.gov/pdf/2016/Oral/Wed_S2-3.pdf2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan 0% 10% 20% 30% 40% 50%](https://reader033.fdocuments.in/reader033/viewer/2022043012/5fac08452b659423eb31e091/html5/thumbnails/19.jpg)
2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan
0
5
10
15
20
25
30
8 12 16 20 24 28 32 36 40 44 48
EL %
Half Pitch [nm]
with_obscurationwithout_obscuration
Slide 19
Public
Contrast loss for semi-dense pitches using Dipole
illumination large part diffraction order blocked
• Worst point has acceptable Exposure Latitude
• Mitigation by means of SMO and SRAFs (for 16nm HP and up)
Horizontal L/S through pitch
DipoleY (20% pupil fill ratio)
![Page 20: EUV high NA anamorphic imagingeuvlsymposium.lbl.gov/pdf/2016/Oral/Wed_S2-3.pdf2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan 0% 10% 20% 30% 40% 50%](https://reader033.fdocuments.in/reader033/viewer/2022043012/5fac08452b659423eb31e091/html5/thumbnails/20.jpg)
2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan
0
5
10
15
20
25
30
8 12 16 20 24 28 32 36 40 44 48
EL %
Half Pitch [nm]
with_obscurationwithout_obscuration
Slide 20
Public
Contrast loss for semi-dense pitches using Dipole
illumination large part diffraction order blocked
• Worst point has acceptable Exposure Latitude
• Mitigation by means of SMO and SRAFs (for 16nm HP and up)
• Contrast unobscured pitches very similar to 0.33NA for identical k1 values
0
5
10
15
20
25
30
0.25 0.5 0.75 1 1.25 1.5 1.75 2
EL %
k1 value [-]
with_obscurationwithout_obscuration0.33NA
Horizontal L/S through pitch
DipoleY (20% pupil fill ratio)
![Page 21: EUV high NA anamorphic imagingeuvlsymposium.lbl.gov/pdf/2016/Oral/Wed_S2-3.pdf2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan 0% 10% 20% 30% 40% 50%](https://reader033.fdocuments.in/reader033/viewer/2022043012/5fac08452b659423eb31e091/html5/thumbnails/21.jpg)
2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan
0
5
10
15
20
25
30
20 30 40 50 60 70 80 90 100
EL %
Pitch [nm]
with_obscuration
without_obscuration
Slide 21
Public
Negligible contrast loss for illumination shapes of which small
part diffraction orders is blocked
12nm horizontal spaces through pitch
Small annular (20% pupil fill ratio)
![Page 22: EUV high NA anamorphic imagingeuvlsymposium.lbl.gov/pdf/2016/Oral/Wed_S2-3.pdf2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan 0% 10% 20% 30% 40% 50%](https://reader033.fdocuments.in/reader033/viewer/2022043012/5fac08452b659423eb31e091/html5/thumbnails/22.jpg)
2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan
0
5
10
15
20
25
30
20 30 40 50 60 70 80 90 100
EL %
Pitch [nm]
with_obscuration
without_obscuration
Slide 22
Public
Negligible contrast loss for illumination shapes of which small
part diffraction orders is blocked
• Contrast very similar to 0.33NA for identical k1 values
0
5
10
15
20
25
30
0.25 0.5 0.75 1 1.25 1.5 1.75 2
EL %
k1 value [-]
with_obscuration
without_obscuration
0.33NA
12nm horizontal spaces through pitch
Small annular (20% pupil fill ratio)
![Page 23: EUV high NA anamorphic imagingeuvlsymposium.lbl.gov/pdf/2016/Oral/Wed_S2-3.pdf2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan 0% 10% 20% 30% 40% 50%](https://reader033.fdocuments.in/reader033/viewer/2022043012/5fac08452b659423eb31e091/html5/thumbnails/23.jpg)
2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan
0
5
10
15
20
25
30
35
10 12 14 16 18 20 22 24 26 28 30
EL [
%]
Half Pitch [nm]
with_obscurationwithout_obscuration
0
5
10
15
20
25
30
35
10 12 14 16 18 20 22 24 26 28 30
EL [
%]
Half Pitch [nm]
with_obscurationwithout_obscuration
Slide 23
Public
High contrast through pitch maintained for 2D features
Dense contact holes through pitch
Small annular (20% pupil fill ratio)
Dense contact holes through pitch
Quasar (20% pupil fill ratio)
![Page 24: EUV high NA anamorphic imagingeuvlsymposium.lbl.gov/pdf/2016/Oral/Wed_S2-3.pdf2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan 0% 10% 20% 30% 40% 50%](https://reader033.fdocuments.in/reader033/viewer/2022043012/5fac08452b659423eb31e091/html5/thumbnails/24.jpg)
2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan
Slide 24
Public
Obscuration has limited impact on non-telecentricity for 1D
features driven by Mask3D effects
• Compensation by SMO (asymmetric illumination) or mask stack optimization
-25
-20
-15
-10
-5
0
5
8 12 16 20 24 28 32 36 40 44 48
Tele
cen
tric
ity
[mra
d]
Half Pitch [nm]
with_obscurationwithout_obscuration
Horizontal L/S through pitch
DipoleY (20% PFR)
-25
-20
-15
-10
-5
0
5
20 30 40 50 60 70 80 90 100
Tele
cen
tric
ity
[mra
d]
Pitch [nm]
with_obscuration
without_obscuration
12nm horizontal spaces through pitch
Small annular (20% PFR)
![Page 25: EUV high NA anamorphic imagingeuvlsymposium.lbl.gov/pdf/2016/Oral/Wed_S2-3.pdf2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan 0% 10% 20% 30% 40% 50%](https://reader033.fdocuments.in/reader033/viewer/2022043012/5fac08452b659423eb31e091/html5/thumbnails/25.jpg)
2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan
Slide 25
Public
Obscuration has limited impact on non-telecentricity for 1D
features driven by Mask3D effects
• Compensation by SMO (asymmetric illumination) or mask stack optimization
-25
-20
-15
-10
-5
0
5
8 12 16 20 24 28 32 36 40 44 48
Tele
cen
tric
ity
[mra
d]
Half Pitch [nm]
with_obscurationwithout_obscuration
-25
-20
-15
-10
-5
0
5
0.25 0.5 0.75 1 1.25 1.5 1.75 2
Tele
cen
tric
ity
[mra
d]
k1 value[-]
with_obscuration
without_obscuration
0.33NA
Horizontal L/S through pitch
DipoleY (20% PFR)
-25
-20
-15
-10
-5
0
5
20 30 40 50 60 70 80 90 100
Tele
cen
tric
ity
[mra
d]
Pitch [nm]
with_obscuration
without_obscuration
-25
-20
-15
-10
-5
0
5
0.25 0.5 0.75 1 1.25 1.5 1.75 2
Tele
cen
tric
ity
[mra
d]
k1 value [-]
with_obscuration
without_obscuration
0.33NA
12nm horizontal spaces through pitch
Small annular (20% PFR)
![Page 26: EUV high NA anamorphic imagingeuvlsymposium.lbl.gov/pdf/2016/Oral/Wed_S2-3.pdf2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan 0% 10% 20% 30% 40% 50%](https://reader033.fdocuments.in/reader033/viewer/2022043012/5fac08452b659423eb31e091/html5/thumbnails/26.jpg)
2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan
Slide 26
Public
Obscuration has limited impact on non-telecentricity for 2D
features driven by Mask3D effects
• Small compensation effect observed for semi-dense pitches
-20
-15
-10
-5
0
10 12 14 16 18 20 22 24 26 28 30Tele
cen
tric
ity-
Y [
mra
d]
Half Pitch [nm]
with_obscurationwithout_obscuration
Dense contact holes through pitch
Quasar (20% pupil fill ratio)
-20
-15
-10
-5
0
10 12 14 16 18 20 22 24 26 28 30Tele
cen
tric
ity-
Y [
mra
d]
Half Pitch [nm]
with_obscurationwithout_obscuration
Dense contact holes through pitch
Small annular (20% pupil fill ratio)
![Page 27: EUV high NA anamorphic imagingeuvlsymposium.lbl.gov/pdf/2016/Oral/Wed_S2-3.pdf2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan 0% 10% 20% 30% 40% 50%](https://reader033.fdocuments.in/reader033/viewer/2022043012/5fac08452b659423eb31e091/html5/thumbnails/27.jpg)
Anamorphic Placement aware SMO mitigates non-
telecentricity Confidential
Slide 27
Pattern shift through focus Flat-Mask SMO source
Placement aware SMO source
Multi-pitch L/S pattern
18nm min. pitch
S1
S2
S3
S4
S5
S6
S7
-0.5
-0.3
-0.1
0.1
0.3
0.5
-15 -5 5 15
Pat
tern
Sh
ift
[nm
]
Defocus [nm]
S1
S2
S3
S4
S5
S6
S7
-0.5
-0.3
-0.1
0.1
0.3
0.5
-15 -5 5 15
Pat
tern
Sh
ift
[nm
]
Defocus [nm]
S1
S2
S3
S4
S5
S6
S7
![Page 28: EUV high NA anamorphic imagingeuvlsymposium.lbl.gov/pdf/2016/Oral/Wed_S2-3.pdf2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan 0% 10% 20% 30% 40% 50%](https://reader033.fdocuments.in/reader033/viewer/2022043012/5fac08452b659423eb31e091/html5/thumbnails/28.jpg)
Anamorphic Placement aware SMO mitigates non-
telecentricity Confidential
Slide 28
• Max non-telecentricity reduces from 13 to 4mrad
Flat-Mask SMO source
Placement aware SMO source
Multi-pitch L/S pattern
18nm min. pitch
S1 S2 S3
S4 S5 S6
S7
Feature dependent non-telecentricity
-15
-10
-5
0
5
10
S1 S2 S3 S4 S5 S6 S7Te
lece
ntr
icit
y [m
rad
] Multi-pitch spaces
Flat mask SMO
M3D SMO
![Page 29: EUV high NA anamorphic imagingeuvlsymposium.lbl.gov/pdf/2016/Oral/Wed_S2-3.pdf2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan 0% 10% 20% 30% 40% 50%](https://reader033.fdocuments.in/reader033/viewer/2022043012/5fac08452b659423eb31e091/html5/thumbnails/29.jpg)
Anamorphic Placement aware SMO restores
overlapping Process window Confidential
Slide 29
Exposure Latitude vs DoF Flat-Mask SMO source
Placement aware SMO source
Multi-pitch L/S pattern
18nm min. pitch
S1
S2
S3
S4
S5
S6
S7
0
5
10
15
20
25
30
0 30 60 90 120
Exp
osu
re L
atit
ud
e [
%]
Defocus [nm]
S1
S2
S3
S4
S5
S6
S7
0
5
10
15
20
25
30
0 30 60 90 120
Exp
osu
re L
atit
ud
e [
%]
Defocus [nm]
S1
S2
S3
S4
S5
S6
S7
![Page 30: EUV high NA anamorphic imagingeuvlsymposium.lbl.gov/pdf/2016/Oral/Wed_S2-3.pdf2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan 0% 10% 20% 30% 40% 50%](https://reader033.fdocuments.in/reader033/viewer/2022043012/5fac08452b659423eb31e091/html5/thumbnails/30.jpg)
Anamorphic Placement aware SMO restores
overlapping Process window Confidential
Slide 30
• Overlapping PW @ 10% EL increases from 36 to 64nm
Flat-Mask SMO source
Placement aware SMO source
Multi-pitch L/S pattern
18nm min. pitch
S1 S2 S3
S4 S5 S6
S7
Overlapping Process window
0
5
10
15
0 20 40 60 80Ex
po
sure
Lat
itu
de
[%
]
Depth of Focus [nm]
Flat mask SMO
Placement aware SMO
![Page 31: EUV high NA anamorphic imagingeuvlsymposium.lbl.gov/pdf/2016/Oral/Wed_S2-3.pdf2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan 0% 10% 20% 30% 40% 50%](https://reader033.fdocuments.in/reader033/viewer/2022043012/5fac08452b659423eb31e091/html5/thumbnails/31.jpg)
2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan
Slide 31
Public
Contents
Mask
Central obscuration
Contrast
Summary & conclusions
![Page 32: EUV high NA anamorphic imagingeuvlsymposium.lbl.gov/pdf/2016/Oral/Wed_S2-3.pdf2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan 0% 10% 20% 30% 40% 50%](https://reader033.fdocuments.in/reader033/viewer/2022043012/5fac08452b659423eb31e091/html5/thumbnails/32.jpg)
2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan
Slide 32
Public
0.55NA gives high image contrast down to 8nm L/S
and 10nm contact holes
NILS vs resolution for 1D L/S NILS vs resolution for Contact holes
0
2
4
6
8
5 10 15 20 25
NIL
S [-
]
Half pitch [nm]
0.33NA
0.55NA
0
2
4
6
8
5 10 15 20 25 30
NIL
S [-
]
Half pitch [nm]
0.33NA
0.55NA
![Page 33: EUV high NA anamorphic imagingeuvlsymposium.lbl.gov/pdf/2016/Oral/Wed_S2-3.pdf2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan 0% 10% 20% 30% 40% 50%](https://reader033.fdocuments.in/reader033/viewer/2022043012/5fac08452b659423eb31e091/html5/thumbnails/33.jpg)
2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan
Slide 33
Public
Local CDU dominant contributor to EPE – Mitigation
via image contrast enhancement
![Page 34: EUV high NA anamorphic imagingeuvlsymposium.lbl.gov/pdf/2016/Oral/Wed_S2-3.pdf2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan 0% 10% 20% 30% 40% 50%](https://reader033.fdocuments.in/reader033/viewer/2022043012/5fac08452b659423eb31e091/html5/thumbnails/34.jpg)
2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan
Slide 34
Public
Local CDU dominant contributor to EPE – Mitigation
via image contrast enhancement
Jo Finders, SPIE 2016 and Fraunhofer IISB Litho simulation workshop 2016
![Page 35: EUV high NA anamorphic imagingeuvlsymposium.lbl.gov/pdf/2016/Oral/Wed_S2-3.pdf2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan 0% 10% 20% 30% 40% 50%](https://reader033.fdocuments.in/reader033/viewer/2022043012/5fac08452b659423eb31e091/html5/thumbnails/35.jpg)
2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan
0
1
2
3
4
5
6
10 15 20 25 30
req
uir
ed
NIL
S fo
r 1
5%
LC
DU
Half Pitch (nm)
17mJ 35mJ 70mJ
Slide 35
Confidential
High NA most powerful knob to control Local CDU and
dose requirements
Courtesy: Sander Wuister, Gijsbert Rispens
0
1
2
3
4
5
6
10 15 20 25 30
req
uir
ed
NIL
S fo
r 1
5%
LC
DU
Half Pitch (nm)
17mJ 35mJ
70mJ NILS 0.33NA
NILS 0.55NA0
10
20
30
40
50
60
70
80
1 2 3 4 5 6
Do
se [
mJ/
cm2
]
NILS [-]
Dose to meet 15% LCDU requirement
for 18nm dense holes
0.33NA
0.55NA
![Page 36: EUV high NA anamorphic imagingeuvlsymposium.lbl.gov/pdf/2016/Oral/Wed_S2-3.pdf2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan 0% 10% 20% 30% 40% 50%](https://reader033.fdocuments.in/reader033/viewer/2022043012/5fac08452b659423eb31e091/html5/thumbnails/36.jpg)
2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan
Slide 36
Public
Contents
Mask
Central obscuration
Contrast
Summary & conclusions
![Page 37: EUV high NA anamorphic imagingeuvlsymposium.lbl.gov/pdf/2016/Oral/Wed_S2-3.pdf2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan 0% 10% 20% 30% 40% 50%](https://reader033.fdocuments.in/reader033/viewer/2022043012/5fac08452b659423eb31e091/html5/thumbnails/37.jpg)
2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan
Slide 37
Confidential
Summary and conclusions
It’s all about the angles • Anamorphic imaging solves the angular spread at the mask
• M3D effects similar to 0.33NA
• Central obscuration enables high throughput with good imaging performance
• Anamorphic SMO does the rest
EUV High NA • Increased resolution enabling 8nm HP imaging
• Above all… superior contrast
• Key for reducing LCDU and EPE budget for maintaining shrink roadmap
![Page 38: EUV high NA anamorphic imagingeuvlsymposium.lbl.gov/pdf/2016/Oral/Wed_S2-3.pdf2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan 0% 10% 20% 30% 40% 50%](https://reader033.fdocuments.in/reader033/viewer/2022043012/5fac08452b659423eb31e091/html5/thumbnails/38.jpg)
2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan
Slide 38
Public
The authors would like to thank:
• Sander Wuister
• Jo Finders
• Stephen Hsu (Brion)
• Matthias Rösch
• Jens Timo Neumann
• Paul Graüpner
• Jörg Zimmerman
• Bernard Kneer
• Sacha Migura
![Page 39: EUV high NA anamorphic imagingeuvlsymposium.lbl.gov/pdf/2016/Oral/Wed_S2-3.pdf2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan 0% 10% 20% 30% 40% 50%](https://reader033.fdocuments.in/reader033/viewer/2022043012/5fac08452b659423eb31e091/html5/thumbnails/39.jpg)
2016 International Symposium on Extreme Ultraviolet Lithography, Hiroshima, Japan
Thank you for your
attention !