EUREKA: A new Industry EUV Research Center at...

Berkeley Lab | MSD Materials Sciences Division 1

EUREKA: A new Industry EUV

Research Center at LBNL Patrick Naulleau

Center for X-ray Optics

Lawrence Berkeley National Laboratory


Operating model

• Core operational and infrastructure

funding to build and preserve facilities

provided by Core Members

• Differential funding for expanded

operations and non-core upgrades

provided by Supplier Members


Status • Master agreement with Founding Core Members

signed mid September

• Title to SEMATECH EUV assets in Berkeley

transferred to LBNL on 9/25

• Multiple supplier members now in signing process

• Discussions underway with numerous other

suppliers in resist, tool, and mask space

Berkeley Lab | MSD Materials Sciences Division

Reflectometer/

Scatterometer

13-nm in non-CAR

0.5-NA Litho coming soon EUV AIMS up to 0.6 NA

0.3-NA Litho Cornerstone tools


Specifications

• Wavelength precision: 0.007%

• Wavelength accuracy: 0.013%

• Reflectance precision: 0.08%

• Reflectance accuracy: 0.08%

• Spectral purity: 99.98%

• Dynamic range: 1010

CXRO Calibrations

and Standards

Beamline


0 10 20 30 40 50 60 70 80 901E-5

1E-4

1E-3

0.01

0.1

1PMMA (=13.5 nm)

d = 286.5 nm

Re

flect

an

ce

Angle (deg)

=0.0242, =0.0054

High accuracy measurements of optical

constants of EUV resist and mask materials


EUV 0.3-NA MET

13 nm


MET: engine

for materials

learning Cumulative

wafers

Cumulative

materials


13-nm patterning achieved in non-CA resist

60

mJ/cm2

LWR

= 3.1 nm


• NA = 0.5

• Magnification = 5x

• Resolution limit = 8 nm

• Programmable pupil fill

• Mask angle of incidence = 6°

• Integrated wavefront metrology

• Robotic linked track


Reticle stage assembly

Projection optics box

Tool core metrology frame

Wafer stage assembly


7-axis reticle stage

Spec Measured

XY Low freq.

(<2Hz) PV 3 nm 0.92 nm

XY High freq.

(>0.5Hz) RMS 2 nm 0.33 nm

Z Low freq.

(<2Hz) PV 10 nm 1.7 nm

Z High freq.

(>0.5Hz) RMS 3 nm 0.61 nm


5-axis wafer stage/

2-axis LSI carriage

Spec Measured

XY Low freq.

(<2Hz) PV 3 nm 0.51 nm

XY High freq.

(>0.5Hz) RMS 1 nm 0.65 nm

Tip/Tilt RMS 18 mrad 0.15 mrad

Z Low freq.

(<2Hz) PV 10 nm 1.5 nm

Z High freq.

(>0.5Hz) RMS 3 nm 0.42 nm


Range Specification Result

Figure CA – 3mm < 0.1nm rms 0.04 nm rms

Flare 3mm – 0.43um < 0.17nm rms 0.12 nm rms

HSFR 1um – 10nm < 0.15nm rms 0.08 nm rms

Range Specification Result

Figure CA – 8mm < 0.1nm rms 0.08 nm rms

Flare 8mm – 1.2um < 0.17nm rms 0.14 nm rms

HSFR 1um – 10nm < 0.15nm rms 0.09 nm rms

M1

M2

Predicted POB EUV flare = 2.86%

Individual mirrors better than spec


System wavefront 2x better than spec

Reticle field point (um)

WFE @ 30cycles across aperture (nm rms)

0, 0 0.21 (spec=0.5)

75, 500 0.43 (spec=1.0)

75, -500 0.41 (spec=1.0)

-75, -500 0.34 (spec=1.0)

-75, 500 0.36 (spec=1.0)


Platform integration nearly complete


Other relevant assets for EUREKA Members at LBNL


Instrumentation for direct characterization of EUV radiation chemistry

1: Introduce materials

as molecular or

nanoparticle beam

2: Irradiate with

EUV or electrons

3: Measurement

of electrons and

chemistry

Inorganic nanoparticle

resists coated in-situ

with resist materials

Nebulized

polymeric resist

condenses to

particles

Molecular resist

EUV

Fragment Mass

Electron Energy

Co

un

t

Co

un

t Mass

spectroscopy

for molecular

reactions

Ee- = 92eV-

Binding E

Photo-electron

imaging for

energy and count


RSoXS: soft-x-ray potential for 3D chemically sensitive profile metrology

MSE Division

Preliminary Fitting of Soft X-ray Data

• Fits to soft x-ray data within uncertainty of hard x-ray data

• Supportive to idea of asymmetric edge profile

• Additional data considerably reduces fit uncertainty

Soft X-ray

Hard X-ray Soft X-ray

10-3

10-2

10-1

100

101

102

103

104

105

106

107

108

109

1010

1011

Inte

nsity (

a.u

.)

-0.6 -0.4 -0.2 0.0 0.2 0.4 0.6

q (nm-1

)

10-3

10-2

10-1

100

101

102

103

104

105

106

107

108

109

1010

1011

Inte

nsity (

a.u

.)

0.40.20.0-0.2-0.4

q (nm-1

)

60

50

40

30

20

10

0

He

igh

t (n

m)

-20 -10 0 10 20

Width (nm)

60

50

40

30

20

10

0

He

igh

t (n

m)

-20 -10 0 10 20

Width (nm)

PMMA

Sunday et al. JM3 12 (3), 2013, 031103

MSE Division

Soft X-ray CD-SAXS Results for 1:1 Sample

• Scattering intensity and number of peaks increased substantially

with RSoXS

– qx-qz plot result of reconstruction from >400 images

– Data up to 10th order diffraction peak

• Higher q data corresponds to smaller features and finer details

10-1

100

101

102

103

104

105

106

Co

un

ts (

arb

)

0.060.040.020.00-0.02-0.04qz (Å

-1)

Hard X-ray_n3 Soft X-ray_n3 Hard X-ray_n4 Soft X-ray_n4 Hard X-ray_n5 Soft X-ray_n5

Hard vs. Soft

n=3

n=4

n=5

10

12

3 4 5

Hard X-ray

1

2 3 45

67

8 9

Soft X-ray

Sunday et al. JM3 12 (3), 2013, 031103

CD-RSoXS on Polymer Lithography Grating

Compares favorably to hard X-ray and provides benefit

of chemical sensitivity for potential use in latent images


Realtime in liquid AFM for development studies

Encased cantilever for fast response in liquid

Start of developer injection


Nano-Auger for Surface Elemental Analysis

Auger

REELS

In-situ analysis of

SiAu alloys above

and below the

Eutectic point

Mapping S and Mo in single

monolayer CVD MoS2

islands showing S deficit at

grain boundaries

Chemical Analysis with sub-50 nm

resolution on SEM-type samples

EUREKA: A new Industry EUV Research Center at...

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