Engineering - RF Power Amplifier Design - eBook
Transcript of Engineering - RF Power Amplifier Design - eBook
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RF Pow er Am pl i f ier Design
Markus Mayer & Ho lger A r thaber
Department of Electrical Measurements and Circuit Design
Vienna University of Technology
June 11, 2001
2
Contents
Basic Amplifier Concepts
lClass A, B, C, F, hHCA
l Linearity Aspects
lAmplifier Example
Enhanced Amplifier Concepts
l Feedback, Feedforward, ...
lPredistortion
l LINC, Doherty, EER, ...
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Ef f ic ienc y Def in i t ions
Drain Efficiency:
Power Added Efficiency:
DC
OUT
DP
P=
=
=
GP
PPD
DC
INOUTPA
11
4
Idea l FET Input and Output Charact er is t i c s
DD
KDD
V
VV =
0VGS
IDS
Im
2VP VP VDSmaxVDDVKVDS
0
V =VGS P
V =0GS
Ohmic Saturation Breakdown
gm
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Max imum Outpu t Pow er Matc h
m
KDS
OPT I
VV
R
=max
0VGS
IDS
Im
2VP VP VDSmaxVDDVKVDS
0
V =VGS P
V =0GS
Ohmic Saturation Breakdown
gm
6
Class A
0VGS
IDS
Im
2VP VP VDSmaxVDDVKVDS
0
VGS VDS
2p
p
Q
IDS
Im
0 2ppQ
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Class A Ci rcu i t
VDD
RLDG
S
48%
dB)14(e.g.
50%
PA =
=
=
A
D
GG
8
Class B
0VGS
IDS
Im
2VP VP VDSmaxVDDVKVDS
0
VGS VDS
2p
p
Q
IDS
Im
0 2ppQ
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Class C
0VGS
IDS
Im
2VP VP VDSmaxVDDVKVDS
0
VGS VDS
2p
p
Q
IDS
Im
0 2ppQ
10
Class B and C Ci rc u i t
%65
dB)(86dB-
%78
PA =
=
=
A
D
GG
%0
1
%100
PA
G
D
VDD
RL
DG
S
f0
Class B Class C
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In f luence of Conduc t ion Angle
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Class F (HCA . .. harmonic con tro l led am pl i f ier )
0VGS
IDS
Im
2VP VP VDSmaxVDDVKVDS
0
VGS VDS
2p
p
Q
IDS
Im
0 2ppQ
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hHCA (ha lf s inuso ida ll y d r i ven HCA)
0VGS
IDS
Im
2VP VP VDSmaxVDDVKVDS
0
VGS VDS
2p
p
Q
IDS
Im
0 2ppQ
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Cl ass F and hHCA Ci rcu i t
VDD
RLVDS
ID Ze(n)
0, n=eveninf, n=even
Zo(n)
0, n=1inf, n=odd
%87
dB)(95dB-
0%10
PA =
=
=
A
D
GG
Class F hHCA
%96
dB)(151dB
0%10
PA =
+=
=
A
D
GG
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hHCA Thi rd Harmoni c Peak ing
0VGS
IDS
Im
2VP VP VDSmaxVDDVKVDS
0
VGS VDS
2p
p
Q
IDS
Im
0 2ppQ
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Thi rd Harmonic Peak ing Ci rcu i t
VDD
RLD
GS
f03f0
%87
dB)(14.60.6dB
91%
PA =
+=
=
A
D
GG
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L inear i t y Aspec t s
18
L inear i t y Aspec t s
Class A
Class B
Class AB
Class C
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L inear i t y Aspec t s
Ideal strongly nonlinear model Strong-weak nonlinear model
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Ampl i f ier Des ign An Ex ample
Balanced Amplifier Configuration
Port 1Z=50 Ohm Port 2
Z=50 Ohm
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Ampl i f ier Des ign Simula t ion
Gate & Drain Waveforms
0 500 1000 1300
Time (ps)
Drain waveforms
-5
0
5
10
15
20
25
-1000
0
1000
2000
3000
4000
5000Inner Drain Voltage (L, V)
Amp
Inner Drain Current (R, mA)
Amp
0 500 1000 1300
Time (ps)
Gate waveforms
-3
-2
-1
0
1
-1000
-500
0
500
1000
Inner Gate Voltage (L, V)
Amp
Inner Gate Current (R, mA)
Amp
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Ampl i f ier Des ign Simula t ion
Dynamic Load Line & Power Sweep
0 3 6 9 12 15
Voltage (V)
Dynamic load line
-2000
0
2000
4000
6000
8000IVCurve (mA)
IV_Curve
Dynamic Load Line (mA)
Amp
0 5 10 15 20 24
Power (dBm)
Power Sweep 1 Tone
0
10
20
30
40
0
10
20
30
40
50
60
70
80
Output Power (L, dBm)
Amp
PAE (R)
Amp
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Ampl i f ier Des ign Measurements
Single Tone & Two Tone
0
5
10
15
20
25
30
35
40
0 5 10 15 20 25 30 35Pin[dBm]
Pout[dBm],Gain[dB]
0
10
20
30
40
50
60
70
80PAE[%]
Pout
Gain
GammaIn
PAE
1dBCP
0
10
20
30
40
50
60
0 5 10 15 20 25 30 35Pin [dBm]
Pout[dBm],IMDD[dBc],Gain[dB]
0
10
20
30
40
50
60PAE[%]
Pout
IMDD
Gain
PAE
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Am pl i f ier Nonl inear it y
Gain and Phase depends on Input Signal
3rd Order Gain-Nonlinearities:
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Am pl i f ier Nonl inear it y
Higher Output Level (close to Saturation) resultsin more Distortion/Nonlinearity
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Nonl inear it y leads t o?
Generation of Harmonics
Intermodulation Distortion / Spectral Regrowth
SNR (NPR) Degradation
Constellation Deformation
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I nt e rmodu la t i on and Harmon ics
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Spec t ral Regrow t h
Energy in adjacent Channels
ACPR (Adjacent Channel Leakage Power Ratio) increases
-15 -10 -5 0 5 10 15-60
-50
-40
-30
-20
-10
0
10
relativepower/dB
relative frequency / MHz
ACPR1>60dB
ACPR2>60dB
ACPR1=16dB
ACPR2=43dB
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Reduc ed NPR (Noise Pow er Rat io)
Input Signal
Degradation of Inband SNR
Noisy Constellation
Output Signal ofNonlinear Amplifier
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Conste l la t ion Deformat ion
Input Signal Output Signal ofNonlinear Amplifier(with Gain- and Phase-Distortion)
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Mode l ing o f Nonl ineari t i es
with Memory-Effects
lVolterra Series (=Taylor Series with Memory)
without Memory-Effects
lSaleh Model
l Taylor Series
lBlum and Jeruchim Model
lAM/AM- and AM/PM-conversion
2
2
2 1)(
1)(
r
rrg
r
rrf
a
a
+=
+=
better
performance
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AM/AM- and AM/PM-Conve rsion
GaAs-PA
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AM/AM- and AM/PM-Conve rsion
LDMOS-PA
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How t o preserve Linear i t y?
Backed-Off Operation of PA
lSimplest Way to achieve Linearity
Linearity improving Concepts
lPredistortionl Feedforward
l ...
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How t o preserve Ef f ic iency?
Efficiency improving Concepts
lDohertylEnvelope Elimination and Restoration
l ...
Linearity improving Concepts
lHigher Linearity at constant Efficiency Higher Efficiency at constant Linearity
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Direc t (RF) Feedbac k
Classical Method
Decrease of Gain Low Efficiency
Feedback needs more Bandwidth than Signal
Stability Problems at high Bandwidths
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Dist or t ion Feedbac k
Feedback of outband Products only
Higher Gain than RF feedback
Stability Problems due to Reverse Loop
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Feedforward
Overcomes Stability Problem by forward-only Loops
Critical to Gain/Phase-Imbalances0.5dB Gain Error -31dB Cancellation2.5Phase Error -27dB Cancellation
Well suited for narrowband application
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-30 -20 -10 0 10 20 30-60
-50
-40
-30
-20
-10
0
10
relativepower/dB
relative frequency / MHz
original signalpredistorted signal
Cart esian Feedbac k
AM/AM- andAM/PM-correction
High Feedback-Bandwidth
Stability Problems
I
Q
I
Q
I
Q
modulator
demodulator
OPAs
main amp.
localoscillator
RF-output
baseb
and
input
UMTS example:
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Digi ta l Predis tor t ion
Digital Implementation of Cartesian Feedback
Additional ADCs, DSP Power, Oversampling needed
Loop can be opened no Stability Problems
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Analog Predis tor t ion
Predistorter has inverse Function of Amplifier
Leads to infinite Bandwidth (!)
Hard to realize (accuracy)
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Analog Predis tor t ion
Possible Realizations:
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LINC (Linear Ampl i f ica t ion by Nonl inear Components)
AM/AM- andAM/PM-correction
Digital separation required(accuracy!)
High Bandwidth,oversampling necessary
Stability guaranteed
signal
separations(t)
s (t)1K
Ks (t)2
K(s (t)+1 s (t))=Ks(t)
2
Ks (t)1
Ks (t)2
-30 -20 -10 0 10 20 30-60
-50
-40
-30
-20
-10
0
10
relativepower/dB
relative frequency / MHz
ACPR1>60dB
ACPR2>60dB
ACPR1=18dB
ACPR2=29dB
s(t)s
1(t)
UMTS example:
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Doherty Am pl i f ier
Auxiliary amplifier supports main amplifier during saturation
PAE can be kept high over a 6dB range
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Doherty Am pl i f ier
Gain vs. Input Power
No improvement of AM/AM- and AM/PM-distortion
Behavior of auxiliary amplifier very hard (impossible) to realize
Stability guaranteed
Efficiency vs. Input Power
main amp. (A1)
aux. amp. (A2)
PIN
POUT
dohe
rtyconfig
uratio
n(A
1+A2)
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EER (Envelope El im inat i on and Restorat ion)
Separating phase and magnitude information
Elimination of AM/AM-distortion
Application of high-efficient amplifiers(independent of amplitude distortion)
Stability guaranteed
signalseparation
amplitude information
phase information
RF input
RF output
high efficiencypower amplifier
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EER (Envelope El im inat i on and Restorat ion)
Analog realization
l Limiter hard to build
l Accuracy problemsl Feedback necessary
Digital realization
l Oversampling + high D/A-conversion rates required
l High power consumptionof DSP and D/A-converters
l Possible feedbackelimination
lCompensation of AM/PM-distortion possible
D
A
D
A
D
A
amplitude information
phase information
modulator
RF output
high efficiencypower amplifier
digitalsignal
processor
local oscillator
supply voltage amplifier
I
Q I
Q
digitalbasebandinput
peak detectorsupply voltage
amplifier
limiter
high efficiencypower amplifier
RF output
peak detector
RF input
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EER (Envelope El im inat i on and Restorat ion)
Bandwidth of Magnitude- andphase-signal have higher thantransmit signal
Five times (!) oversamplingnecessary to achieve standardrequirements
-30 -20 -10 0 10 20 30-60
-50
-40
-30
-20
-10
0
10
relativepower/dB
relative frequency / MHz
MagnitudePhase
-30 -20 -10 0 10 20 30-60
-50
-40
-30
-20
-10
0
10
relativepower/dB
relative frequency / MHz
ACPR1>60dB
ACPR2>60dB
ACPR1=33dB
ACPR2=40dB
ACPR1=51dB
ACPR2=36dB
ACPR1=53dB
ACPR2=49dB
full bandwidth3 B
0
bandwidth
5 B0 bandwidth7 B
0bandwidth
UMTS example:UMTS example:
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Adapt ive Bias
Varying/Switching of Bias-Voltage depending onInput Power Level
Selection of Operating Point with high PAE
Applicably for nearly each type of Amplifier
RF input
peak detector
biascontrol
RF output
high efficiencypower amplifier
50
32 33 34 35 36 37 38 39 4020
30
40
50
60
70
80
90
output power / dBm
poweraddedefficiency/%
VD
=3.5V
VD
=4.5V
VD
=6.5V
Adapt ive Bias
Single tone PAE for switchedVDD with VG kept constant
Simply to implement Concept
Stability guaranteed
Possible problems:
l DC-DC converter with highefficiency necessary
l Possible Linearity Change(can increase and decrease)especially for HCAs
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Summary
Digital Realization required to achieve Accuracy
Problem of Stability for high Bandwidth Application
Higher Bandwidths (Oversampling) necessary,depending on Order of IMD cancellation
Predistortion gives best Results while keepingEfficiency high (valid for high Output Levels > 40dBm)
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Figure Referenc es
F. Zavosh et al,Digital Predistortion Techniques for RF PowerAmplifiers with CDMA Applications,Microwave Journal, Oct. 1999
Peter B. Kenington,High-Linearity RF Amplifier Design,Artech House, 2000
Steve C. Cripps,RF Power Amplifiers for Wireless Communications,Artech House, 1999
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Contac t In format ion
DI Markus Mayer
( +43-1-58801-35425
DI Holger Arthaber
( +43-1-58801-35420