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Energy Distribution in Hostile Environment: Power Converters and Devices
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Transcript of Energy Distribution in Hostile Environment: Power Converters and Devices
Mauro Citterio ICATPP Como – 10/4/2011 1
Energy Distribution in Hostile Environment:
Power Converters and Devices
Mauro Citterioon behalf of the INFN-APOLLO project
Mauro Citterio ICATPP Como – 10/4/2011 2
INDEX
• The ATLAS LAr Calorimeter System …. a test case
• The Proposed Power Distribution for an Upgraded LAr System
• Characteristics of Power MOSFETs under irradiation
• - exposed to ionizing radiation (gamma 60Co)
• - exposed to heavy ions (75Br at 155 MeV)
• - exposed to protons (216 MeV)
• Conclusions
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The ATLAS experiment
LAr barrel calorimeter
The power distribution and conversion scheme in the detector area
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The required qualification doses for this application are:
4.5 x 104 rad and 2 x 1012 particles/cm2 (> 20 MeV)
Ten times higher for Hi-LHC scenario (70 safety factor)!!!
ATLAS Experiment: Lar Barrel CalorimeterDetails of the Front End Electronics and Main Power Converter
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ATLAS Experiment: Present StatusLAr Calorimeter Front-End Board (FEB) Power Distribution
19 LDO regulators/FEB
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CRATE
280 Vdc
MainDC/DC
Converter
Card #3
POLLDO Converter
POLLDO Converter
POLLDO Converter
Card #2
POLLDO Converter
POLLDO Converter
POLLDO Converter
Card #1
POLniPOL Converter
POLniPOL Converter
POLniPOL Converter
Regulated DC bus
POL Converter with high step-down ratioCharacteristics:• Main isolated converter with N+1 redundancy• High DC bus voltage (12V or other)• Distributed Non-Isolated Point of Load Converters (niPOL) with high step-down ratio
Proposed Power Supply Distribution Scheme for a LAr Upgrade
MORE INFO TAKE A LOOKAT THE DEDICATED POSTER !!!
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The Main Converter
Q1
Q2
Q3
Q4
T1 C
o
C4
L
Vi
n
Vou
t
+-C
3
C2
C1
T2
T3
iT
2
iL
T4
+
+
+
+Vout = 12V
Switched In Line Converter SILC- Required Mosfet Voltage
Breakdown: ~ 200 Volt or higher- Mosfets, diodes and controller must
be qualified against radiation
The Point of Load
S1
S2
S3
S4
L1
Co
RC1
L2
Uin Uo
+
-UC
1
+
-
D<50% Uo = UinD/2
POL Specifications:Input voltage: Ug = 12 VOutput voltage: Uo = 2.5 VOutput current: Io = 3AOperating frequency: fs = 1 MHz
350 nH air core inductors
Critical Elements for a LAr Upgrades
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Power Mosfets exposed to gamma rays
Devices under test:
30V STP80NF03L-04
30V LR7843
200V IRF630
Used doses:
I 1600 Gray
II 3200 Gray
III 5890 Gray
IV 9600 Gray
Measurements :
Breakdown Voltage @ VGS=-10V
Threshold Voltage @ VDS=5V
ON Characteristic @ VGS=10V
Gate Leakage @ VDS=10V
For each type of device 20 samples were tested, 5 for each dose value(tested at the ENEA Calliope Test
Facility)
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30 V Mosfet: STP80NF03L-04
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30 V Mosfet: LR7843
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200 V Mosfet: IRF630
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Mosfet Exposed to Heavy Ions.The SEE framework
N+
Drain
P +
N +
P _
GateSource
N_
Body
N+ N+
Drain
P +
N +
P _
GateSource
N_
Body
N+
Destructive Single Event Effects in Power MOSFETS (tested at INFN Catania)
Single Event Burnout Single Event Gate Rupture
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The SEE experimental set-up
Fast Sampling Oscilloscope
Parameter Analyzer
N+
Drain
P +
N +
P _
GateSource
N_
Body
N+
Cg
Cd
50 W
50 W
1 MW1 MW
Vgs
Impacting Ion DUT
Vds
0 500 1000 1500 2000-2.0
-1.5
-1.0
-0.5
0
Time [s]
Gat
e Le
akag
e C
urre
nt [
A ]
20 40 60 80 100 120
0
5
1
15
Time [ns]
Cur
rent
[mA
]
The current pulses
The IGSS evolution during irradiation
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0 10 30 400
0.5
1
1.5
2
2.5
x 1011
Charge [pC]
50 100 1508
10
12
14
16
Vds [V]
Cha
rge
[pC
]
Vds
20 40 60 80 100 120
0
0.5
1
1.5
0
0.5
1
1.5
0
Time [ns]
Cur
rent
[mA
]
10 20 30 40 10 20 30 40
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5x 1010
Charge [pC]
The SEE analysisTIME DOMAIN WAVEFORMS SCATTER PLOT
NUMERICAL INTEGRATION
Γ-LIKE DISTRIBUTION
FUNCTION PARAMETERS EXTRACTION
MEAN CHARGE vs BIAS VOLTAGE Γ-LIKE DISTRIBUTION FUNCTION
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The SEE experimental results
Devise TID Bias Conditions during Irradiation
Drain Damage Gate Damage
D21 0Gy Vds=20V-110V vgs=-2V Vds=100V-110V Vds=100V-110VD22 0Gy Vds=20V-120V vgs=-6V Vds=110V-120V Vds=100V-110VD06 1600Gy Vds=20V-70V vgs=-2V Vds=60V-70V Vds=60V-70VD10 3200Gy Vds=20V-50V vgs=-6V Vds=40V-50V Vds=40V-50VD14 5600Gy Vds=20V-55V vgs=-6V Vds=50V-55V Vds=40V-50VD16 5600Gy Vds=20V-50V vgs=-6V Vds=45V-50V Vds=40V-45VD17 9600Gy Vds=20V-45V vgs=-6V Vds=40V-45V Vds=40V-45V
The increase of the ϒ-dose causes a reduction of the critical bias condition at which drain and gate damages
appear
200 V Mosfet: IRF630
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0 20 40 60 80 100 120 140 160 180 200
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
Time [ns]
Cur
rent
[mA
]
0 20 40 60 80 100 120 140 160 180 200
0
5
10
15
20
25
30
35
Time [ns]
Cur
rent
[mA
]
The SEE experimental results
Two different sensitive areas
The SEB current pulse
D21 0Gy Vds=110V Vgs=-2V
D21 0Gy Vds=110V Vgs=-2V
20 30 40 50 60 70 80 90 100
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
Vds [V]
Cha
rge
[pC
]
Mean charge vs Vds
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0 20 40 60 80 100 120 140 160 180 200-20
0
20
40
60
80
100
120
Time [ns]
Cur
rent
[A
]
D21 0GyD10 3200GyD14 5600GyD17 9600Gy
The SEE experimental resultsScatter-plot Vds=50V
The increase of the ϒ-dose causes a widening of the current pulses
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Characterization requires that an SEB circumvention method be utilized
SEB characterization produces a cross-sectional area curve as a function of LET for a fixed VDS and VGS. Generally SEB is not sensitive to changes in the gate bias, VGS. However, the VGS bias shall be sufficient to bias the DUT in an “off” state (a few volts below
VTH), allowing for total dose effects that may reduce the VTH.
Mosfet Exposed to ProtonsSEB characterization
The only difference in the test set-up was that the current probe
was on the Mosfet Source
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Mosfet Exposed to ProtonsThe results are still preliminary. Only the 200V Mosfets (IRF 630, samples from two different manufacturers) were exposed
Proton energy: 216 MeV (facility at Massachusetts General Hospital, Boston)Ionizing Dose: < 30 Krads
An “absolute” cross section will require the knowldege of the area of the Mosfet die which is unknown.
10-12
10-11
10-10
10-9
10-8
10-7
182 184 186 188 190 192 194 196
IRF630 - ST
Cro
ss S
ectio
n [c
m-2
]
VDS [Volt]
10-12
10-11
10-10
10-9
10-8
10-7
175 180 185 190 190 195
IRF630 - International Rectifier
Cro
ss S
ectio
n [c
m-2
]
VDS [Volt]
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The number of SEB events recorded at each VDS was small less then 30 events for the ST
less than 150 events for the IR devices
Large statistical errors affect the measurements The cross section at VDS = 150 V (“de-rated” operating voltage)
can not be properly estimated Dependence from manufacturer
“Knee” not well defined
To effectively qualify the devices for 10 years of operation at Hi-LHC, the cross section has to be of the order of 10-17/ cm2, which puts the
failure rate at <1 for 10 years of operation
Proton irradiation campaigns with increased fluences and more samples are planned.
Work still in progress ……………..
Mosfet Exposed to Protons
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Distributed Power Architecture has been proposed Main converter (SILC topology)
Point of load converter (IBDV topology)
Critical selcction of components to proper withstand radiation Controller, Driver and Isolator FPGA for overall monitoring
MOSFETS
MOSFETS, both for main converter and POL have been selected and tested
Gamma ray Heavy ions
Protons
Some results are encouraging, however more systematic validation is on-going
Novel devices based on SiC and GaN, are also under investigation
Conclusions