Prof. Dr. Ir. Ahmad Syuhada, M. Sc Prof. Dr. Ir. Yuwaldi ...
EMT111 CHAPTER 1 Introduction to Semiconductor By Pn. ‘Aini Syuhada Md Zain.
-
Upload
abner-knight -
Category
Documents
-
view
215 -
download
0
Transcript of EMT111 CHAPTER 1 Introduction to Semiconductor By Pn. ‘Aini Syuhada Md Zain.
![Page 1: EMT111 CHAPTER 1 Introduction to Semiconductor By Pn. ‘Aini Syuhada Md Zain.](https://reader035.fdocuments.in/reader035/viewer/2022062518/56649e185503460f94b04325/html5/thumbnails/1.jpg)
EMT111EMT111CHAPTER 1CHAPTER 1
Introduction to Introduction to SemiconductorSemiconductor
ByByPn. ‘Aini Syuhada Md ZainPn. ‘Aini Syuhada Md Zain
![Page 2: EMT111 CHAPTER 1 Introduction to Semiconductor By Pn. ‘Aini Syuhada Md Zain.](https://reader035.fdocuments.in/reader035/viewer/2022062518/56649e185503460f94b04325/html5/thumbnails/2.jpg)
Introduction to Semiconductor -Introduction to Semiconductor -Chapter Outline :Chapter Outline :
1.81.8 Voltage Current Characteristic of a Voltage Current Characteristic of a
DiodeDiode 1.91.9 Diode ModelsDiode Models 1.101.10 Testing a DiodeTesting a Diode
![Page 3: EMT111 CHAPTER 1 Introduction to Semiconductor By Pn. ‘Aini Syuhada Md Zain.](https://reader035.fdocuments.in/reader035/viewer/2022062518/56649e185503460f94b04325/html5/thumbnails/3.jpg)
-When a forward bias voltage is applied – current called forward current,
-In this case with the voltage applied is less than the barrier potential so the diode for all practical purposes is still in a non-conducting state. Current is very small.
-Increase forward bias voltage – current also increase
FI
FIGURE 1-26FIGURE 1-26 Forward-bias measurements Forward-bias measurements show general changes in Vshow general changes in VFF and I and IFF as V as VBIAS BIAS is is
increased.increased.
1.81.8 Voltage-Current Characteristic of Voltage-Current Characteristic of a Diodea Diode ( V-I Characteristic for forward bias)( V-I Characteristic for forward bias)
![Page 4: EMT111 CHAPTER 1 Introduction to Semiconductor By Pn. ‘Aini Syuhada Md Zain.](https://reader035.fdocuments.in/reader035/viewer/2022062518/56649e185503460f94b04325/html5/thumbnails/4.jpg)
-With the applied voltage exceeding the barrier potential (0.7V), forward current begins increasing rapidly.
-But the voltage across the diode increase only above 0.7 V.
FIGURE 1-26FIGURE 1-26 Forward-bias measurements Forward-bias measurements show general changes in Vshow general changes in VFF and I and IFF as V as VBIAS BIAS is is
increased.increased.
1.81.8 Voltage-Current Characteristic of Voltage-Current Characteristic of a Diodea Diode ( V-I Characteristic for forward bias)( V-I Characteristic for forward bias)
![Page 5: EMT111 CHAPTER 1 Introduction to Semiconductor By Pn. ‘Aini Syuhada Md Zain.](https://reader035.fdocuments.in/reader035/viewer/2022062518/56649e185503460f94b04325/html5/thumbnails/5.jpg)
-Plot the result of measurement in Figure 1-26, you get the V-I characteristic curve for a forward bias diode
- Increase to the right
- increase upward
FFd IVr /'
dynamic resistance dynamic resistance r’r’dd decreases as you move up the decreases as you move up the
curvecurve
FV
FI
VVF 7.0
zerobias
VVF 7.0
1.81.8 Voltage-Current Characteristic of Voltage-Current Characteristic of a Diodea Diode ( V-I Characteristic for forward bias)( V-I Characteristic for forward bias)
![Page 6: EMT111 CHAPTER 1 Introduction to Semiconductor By Pn. ‘Aini Syuhada Md Zain.](https://reader035.fdocuments.in/reader035/viewer/2022062518/56649e185503460f94b04325/html5/thumbnails/6.jpg)
Reverse Current
Breakdown voltage-not a normal operation of pn junction devices- the value can be vary for typical Si
1.81.8 Voltage-Current Characteristic of Voltage-Current Characteristic of a Diodea Diode ( V-I Characteristic for Reverse bias)( V-I Characteristic for Reverse bias)
![Page 7: EMT111 CHAPTER 1 Introduction to Semiconductor By Pn. ‘Aini Syuhada Md Zain.](https://reader035.fdocuments.in/reader035/viewer/2022062518/56649e185503460f94b04325/html5/thumbnails/7.jpg)
Combine-Forward bias& Reverse bias CompleteV-I characteristic curve
1.81.8 Voltage-Current Characteristic of Voltage-Current Characteristic of a Diodea Diode ( Complete V-I Characteristic curve)( Complete V-I Characteristic curve)
![Page 8: EMT111 CHAPTER 1 Introduction to Semiconductor By Pn. ‘Aini Syuhada Md Zain.](https://reader035.fdocuments.in/reader035/viewer/2022062518/56649e185503460f94b04325/html5/thumbnails/8.jpg)
• Forward biased dioed : for a given value of
• For a given
• Barrier potential decrease as T increase
• Reverse current breakdown – small & can be neglected
FIT ,
FV
FF VI ,
1.81.8 Voltage-Current Characteristic of Voltage-Current Characteristic of a Diodea Diode ( Temperature effect on the diode V-I ( Temperature effect on the diode V-I Characteristic)Characteristic)
![Page 9: EMT111 CHAPTER 1 Introduction to Semiconductor By Pn. ‘Aini Syuhada Md Zain.](https://reader035.fdocuments.in/reader035/viewer/2022062518/56649e185503460f94b04325/html5/thumbnails/9.jpg)
Directional of current
cathodeanod
1.91.9 Diode Models Diode Models ( Diode structure and symbol)( Diode structure and symbol)
![Page 10: EMT111 CHAPTER 1 Introduction to Semiconductor By Pn. ‘Aini Syuhada Md Zain.](https://reader035.fdocuments.in/reader035/viewer/2022062518/56649e185503460f94b04325/html5/thumbnails/10.jpg)
DIODE MODEL
The Ideal Diode Model
The Complete Diode Model
The Practical Diode Model
1.91.9 Diode Models Diode Models
![Page 11: EMT111 CHAPTER 1 Introduction to Semiconductor By Pn. ‘Aini Syuhada Md Zain.](https://reader035.fdocuments.in/reader035/viewer/2022062518/56649e185503460f94b04325/html5/thumbnails/11.jpg)
•Assume •Forward current, by Ohm’s law
Ideal model of diode- simple switch:
•Closed (on) switch -> FB
•Open (off) switch -> RB
VVF 0
LIMIT
BIASF R
VI
BIASR
R
VV
AI
0
(1-2)
1.91.9 Diode Models Diode Models ( The ideal Diode model)( The ideal Diode model)
![Page 12: EMT111 CHAPTER 1 Introduction to Semiconductor By Pn. ‘Aini Syuhada Md Zain.](https://reader035.fdocuments.in/reader035/viewer/2022062518/56649e185503460f94b04325/html5/thumbnails/12.jpg)
•Adds the barrier potential to the ideal switch model
• ‘ is neglected
•From figure (c):
The forward current [by applying Kirchhoff’s voltage low to figure (a)]
Ohm’s Law
dr '
•Equivalent to close switch in series with a small equivalent voltage source equal to the barrier potential 0.7V
•Represent by produced across the pn junction
FV
•Same as ideal diode model
)(3.0
)(7.0
GeVV
SiVV
F
F
0LIMITRFBIAS VVV
LIMITFR RIVLIMIT
LIMIT
FBIASF R
VVI
BIASR
R
VV
AI
0
(1-3)
1.91.9 Diode Models Diode Models ( The Practical Diode ( The Practical Diode model)model)
![Page 13: EMT111 CHAPTER 1 Introduction to Semiconductor By Pn. ‘Aini Syuhada Md Zain.](https://reader035.fdocuments.in/reader035/viewer/2022062518/56649e185503460f94b04325/html5/thumbnails/13.jpg)
Complete model of diode consists:
•Barrier potential
•Dynamic resistance,
•Internal reverse resistance,
•The forward voltage:
•The forward current:
dr '
Rr '•acts as closed switch in series with barrier potential and small
dr 'Rr '
•acts as open switch in parallel with the large
'7.0 dFF rIVV
'
7.0
dLIMIT
BIASF rR
VVI
(1-4)
(1-5)
1.91.9 Diode Models Diode Models ( The Complete Diode ( The Complete Diode model)model)
![Page 14: EMT111 CHAPTER 1 Introduction to Semiconductor By Pn. ‘Aini Syuhada Md Zain.](https://reader035.fdocuments.in/reader035/viewer/2022062518/56649e185503460f94b04325/html5/thumbnails/14.jpg)
10V10V
1.0kΩ1.0kΩ
5V5V
1.0kΩ1.0kΩ
(1) Determine the forward voltage and forward current [forward bias] for each of the diode model also find the voltage across the limiting resistor in each cases. Assumed rd’ = 10 at the determined value of forward current.
1.91.9 Diode Models Diode Models ( Example)( Example)
![Page 15: EMT111 CHAPTER 1 Introduction to Semiconductor By Pn. ‘Aini Syuhada Md Zain.](https://reader035.fdocuments.in/reader035/viewer/2022062518/56649e185503460f94b04325/html5/thumbnails/15.jpg)
a)a) Ideal ModelIdeal Model::
b)b) Practical ModelPractical Model::
(c) (c) Complete model:Complete model:
VARIV
mAV
R
VI
V
LIMITFR
BIASF
F
LIMIT10)101)(1010(
101000
10
0
33
VARIV
mAVV
R
VVI
VV
LIMITFR
LIMIT
FBIASF
F
LIMIT3.9)101)(103.9(
3.91000
7.010)(
7.0
33
VkmARIV
mVmAVrIVV
mAk
VV
rR
VVI
LIMITFR
dFF
dLIMIT
BIASF
LIMIT21.9)1)(21.9(
792)10)(21.9(7.07.0
21.9101
7.0107.0
'
'
1.91.9 Diode Models Diode Models ( Example)( Example)
![Page 16: EMT111 CHAPTER 1 Introduction to Semiconductor By Pn. ‘Aini Syuhada Md Zain.](https://reader035.fdocuments.in/reader035/viewer/2022062518/56649e185503460f94b04325/html5/thumbnails/16.jpg)
Diodes come in a variety of sizes and shapes. The design and structure isDiodes come in a variety of sizes and shapes. The design and structure is
determined by what type of circuit they will be used in.determined by what type of circuit they will be used in.
1.91.9 Diode Models Diode Models ( Typical Diodes)( Typical Diodes)
![Page 17: EMT111 CHAPTER 1 Introduction to Semiconductor By Pn. ‘Aini Syuhada Md Zain.](https://reader035.fdocuments.in/reader035/viewer/2022062518/56649e185503460f94b04325/html5/thumbnails/17.jpg)
Testing a diode is quite simple, particularly if the multimeter used has a diode check function. With the diode check function a specific known voltage is applied from the meter across the diode.
K A A K
With the diode check function a good diode will show approximately .7 V or .3 V when forward biased.
When checking in reverse bias the full applied testing voltage will be seen on the display.
1.101.10 Testing A Diodes Testing A Diodes ( By Digital ( By Digital multimeter)multimeter)
![Page 18: EMT111 CHAPTER 1 Introduction to Semiconductor By Pn. ‘Aini Syuhada Md Zain.](https://reader035.fdocuments.in/reader035/viewer/2022062518/56649e185503460f94b04325/html5/thumbnails/18.jpg)
Defective Diode
1.101.10 Testing A Diodes Testing A Diodes ( By Digital ( By Digital multimeter)multimeter)
![Page 19: EMT111 CHAPTER 1 Introduction to Semiconductor By Pn. ‘Aini Syuhada Md Zain.](https://reader035.fdocuments.in/reader035/viewer/2022062518/56649e185503460f94b04325/html5/thumbnails/19.jpg)
Select OHMs range
Good diode:
Forward-bias: get low resistance reading (10 to 100 ohm)
Reverse-bias: get high reading (0 or infinity)
1.101.10 Testing A Diodes Testing A Diodes ( By Analog multimeter ( By Analog multimeter – ohm – ohm function ) function )
![Page 20: EMT111 CHAPTER 1 Introduction to Semiconductor By Pn. ‘Aini Syuhada Md Zain.](https://reader035.fdocuments.in/reader035/viewer/2022062518/56649e185503460f94b04325/html5/thumbnails/20.jpg)
P-materials are doped with trivalent impurities
N-materials are doped with pentavalent impurities P and N type materials are joined together to form a PN junction.
A diode is nothing more than a PN junction.
At the junction a depletion region is formed. This creates barrier which requires approximately .3 V for a Germanium and .7 V for Silicon for conduction to take place.
Diodes, transistors, and integrated circuits are all made of semiconductor material.
SummarySummary
![Page 21: EMT111 CHAPTER 1 Introduction to Semiconductor By Pn. ‘Aini Syuhada Md Zain.](https://reader035.fdocuments.in/reader035/viewer/2022062518/56649e185503460f94b04325/html5/thumbnails/21.jpg)
When reversed biased a diode can only withstand so much applied voltage. The voltage at which avalanche current occurs is called reverse breakdown voltage.
There are three ways of analyzing a diode. These are ideal, practical, and complex. Typically we use a practical diode model.
A diode conducts when forward biased and does not conduct when reverse biased
SummarySummary