GaAs Infrared Emitting DiodeSE1450

DESCRIPTION

FEATURESCompact, metal can coaxial package•

24¡ (nominal) beam angle•

935 nm wavelength•

Wide operating temperature range (­55¡C to +125¡C)

•

Mechanically and spectrally matched to SD1420 photodiode, SD1440 phototransistor and SD1410 photodarlington

•

The SE1450 is a gallium arsenide infrared emitting diode mounted in a glass lensed, metal can coaxial package. The package may have a tab or second lead welded to the can as an optional feature (SE1450­XXXL). Both leads are flexible and may be formed as required to fit various mounting configurations.

INFRA-63.TIF

OUTLINE DIMENSIONS in inches (mm)3 plc decimals ±0.005(0.12)Tolerance

2 plc decimals ±0.020(0.51)

.106(2.69)

DIA.076(1.93)

ANODE

MIN

.095(2.41) DIA

.020(0.51) DIA

.091(2.26)

.079(2.01)

.062(1.57) DIA

1.000(25.40)

.122(3.10)

.010(0.25)

CATHODE (CASE)

DIM_001a.ds4

SE1450-XXX

.106(2.69)

DIA.076(1.93)

ANODE

CATHODE

TYPICAL MIN

.095(2.41) DIA

.020 (0.51) DIA

.091(2.26)

.079(2.01)

.062(1.57) DIA

1.000(25.40)

.122(3.10)

.010(0.25)

.020 (0.51) DIA

~~~~

~~

DIM_001b.ds4

SE1450-XXXL

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h8

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

GaAs Infrared Emitting DiodeSE1450

ELECTRICAL CHARACTERISTICS

UNITS TEST CONDITIONSMINPARAMETER SYMBOL TYP MAX

ABSOLUTE MAXIMUM RATINGS

(25¡C Free-Air Temperature unless otherwise noted)

Continuous Forward Current 50 mAPower Dissipation 75 mW [À]

Operating Temperature Range -55¡C to 125¡CStorage Temperature Range -65¡C to 150¡CSoldering Temperature (10 sec) 260¡C

Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.71 mW/¡C.

SCHEMATIC

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h 9

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

GaAs Infrared Emitting DiodeSE1450

Radiant Intensity vsAngular Displacement gra_001.ds4

Angular displacement - degrees

Rel

ativ

e in

tens

ity

0.0

0.1

0.2

0.3 0.4

0.5

0.6

0.7

0.8 0.9

1.0

-40 -30 -20 -10 0 +10 +20 +30 +40

Fig. 1 Radiant Intensity vsForward Current gra_002.ds4

Forward current - mA

Nor

mal

ized

rad

iant

in

tens

ity

0.0

0.1 0.2

0.3 0.4

0.5

0.6

0.7

0.8

0.9

1.0

0.0 10.0 20.0 30.0 40.0 50.0

Fig. 2

Forward Voltage vsForward Current gra_003.ds4

Forward current - mA

For

war

d vo

ltage

- V

1.05

1.10

1.15

1.20

1.25

1.30

1.35

1.40

0 20 40 60

Fig. 3 Forward Voltage vsTemperature gra_200.ds4

Temperature - °C

For

war

d vo

ltage

- V

1.00

1.05

1.10

1.15

1.20

1.25

1.30

1.35

1.40

-50 -25 0 25 50 75 100 125

IF = 20 mA

Fig. 4

Spectral Bandwidth gra_005.ds4

Wavelength - nm

Rel

ativ

e in

tens

ity

0.0

0.1 0.2

0.3 0.4

0.5 0.6

0.7

0.8 0.9

1.0

870 890 910 930 950 970 990 1010

Fig. 5 Coupling Characteristicswith SD1440 gra_006.ds4

Lens-to-lens separation - inches

Nor

mal

ized

ligh

t cu

rren

t

0.0

0.2

0.4

0.6

0.8

1.0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Fig. 6

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h10

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

GaAs Infrared Emitting DiodeSE1450

Relative Power Output vsFree Air Temperature gra_130.ds4

TA - Free-air temperature - (°C)

Rel

ativ

e po

wer

out

put

0.1

1.0

10

-50 -25 0 +25 +50 +75 +100

0.2

0.5

2.0

5.0

IF = 30 mAIF = 20 mA

IF = 10 mA

IF = 40 mA

Fig. 7

All Performance Curves Show Typical Values

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h 11

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

AlGaAs Infrared Emitting DiodeSE1470

DESCRIPTION

FEATURESCompact metal can coaxial package•

24¡ (nominal) beam angle•

880 nm wavelength•

Higher output power than GaAs at equivalent drive currents

•

Wide operating temperature range (­55¡C to +125¡C)

•

Mechanically and spectrally matched to SD1420 photodiode, SD1440 phototransistor and SD1410 photodarlington

•

The SE1470 is a high intensity aluminum gallium arsenide infrared emitting diode mounted in a glass lensed metal can coaxial package. The package may have a tab or second lead welded to the can as an optional feature (SE1470-XXXL). Both leads are flexible and may be formed as required to fit various mounting configurations. These devices typically exhibit 70% greater power intensity than gallium arsenide devices at the same forward current.

INFRA-63.TIF

OUTLINE DIMENSIONS in inches (mm)3 plc decimals ±0.005(0.12)Tolerance

2 plc decimals ±0.020(0.51)

.106(2.69)

DIA.076(1.93)

ANODE

MIN

.095(2.41) DIA

.020(0.51) DIA

.091(2.26)

.079(2.01)

.062(1.57) DIA

1.000(25.40)

.122(3.10)

.010(0.25)

CATHODE (CASE)

DIM_001a.ds4

SE1470-XXX

.106(2.69)

DIA.076(1.93)

ANODE

CATHODE

TYPICAL MIN

.095(2.41) DIA

.020 (0.51) DIA

.091(2.26)

.079(2.01)

.062(1.57) DIA

1.000(25.40)

.122(3.10)

.010(0.25)

.020 (0.51) DIA

~~~~

~~

DIM_001b.ds4

SE1470-XXXL

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h12

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

AlGaAs Infrared Emitting DiodeSE1470

ELECTRICAL CHARACTERISTICS

UNITS TEST CONDITIONSMINPARAMETER SYMBOL TYP MAX

ABSOLUTE MAXIMUM RATINGS

(25¡C Free-Air Temperature unless otherwise noted)

Continuous Forward Current 50 mAPower Dissipation 75 mW [À]

Operating Temperature Range -55¡C to 125¡CStorage Temperature Range -65¡C to 150¡CSoldering Temperature (10 sec) 260¡C

Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.71 mW/¡C.

SCHEMATIC

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h 13

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

AlGaAs Infrared Emitting DiodeSE1470

Radiant Intensity vsAngular Displacement gra_007.ds4

Angular displacement - degrees

Rel

ativ

e in

tens

ity

0.0

0.1

0.2

0.3 0.4

0.5

0.6

0.7

0.8 0.9

1.0

-40 -30 -20 -10 0 +10 +20 +30 +40

Fig. 1 Radiant Intensity vsForward Current gra_008.ds4

Forward current - mA

Nor

mal

ized

rad

iant

inte

nsity

0.0

0.1 0.2

0.3 0.4

0.5 0.6

0.7

0.8 0.9

1.0

0.0 4.0 8.0 16.0 12.0 20.0

Fig. 2

Forward Voltage vsForward Current gra_201.ds4

Forward current - mA

For

war

d vo

ltage

- V

1.0

1.1

1.2

1.3

1.4

1.5

1.6

0 10 20 30 40 50

Fig. 3 Forward Voltage vsTemperature gra_202.ds4

Temperature - °C

For

war

d vo

ltage

- V

1.0

1.1

1.2

1.3

1.4

1.5

1.6

-50 -25 0 25 50 75 100 125

IF = 20 mA

Fig. 4

Spectral Bandwidth gra_011.ds4

Wavelength - nm

Rel

ativ

e in

tens

ity

0.0

0.1 0.2

0.3 0.4

0.5 0.6

0.7

0.8 0.9

1.0

760 800 840 880 920 960 1000

Fig. 5 Coupling Characteristicswith SD1440 gra_012.ds4

Lens-to-lens seperation - inches

Nor

mal

ized

ligh

t cur

rent

0.0

0.2

0.4

0.6

0.8

1.0

0.0 0.2 0.4 0.8 0.6 1.4 1.2 1.0

Fig. 6

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h14

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

AlGaAs Infrared Emitting DiodeSE1470

Relative Power Output vsFree Air Temperature gra_130.ds4

TA - Free-air temperature - (°C)

Rel

ativ

e po

wer

out

put

0.1

1.0

10

-50 -25 0 +25 +50 +75 +100

0.2

0.5

2.0

5.0

IF = 30 mAIF = 20 mA

IF = 10 mA

IF = 40 mA

Fig. 7

All Performance Curves Show Typical Values

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h 15

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

GaAs Infrared Emitting DiodeSE2460

DESCRIPTION

FEATURESMiniature, hermetically sealed, pill style, metal can package

•

18¡ (nominal) beam angle•

Wide operating temperature range (­55¡C to +125¡C)

•

Ideal for direct mounting to printed circuit boards•

935 nm wavelength•

Mechanically and spectrally matched to SD2420 photodiode, SD2440 phototransistor and SD2410 photodarlington

•

The SE2460 is a gallium arsenide infrared emitting diode mounted in a hermetically sealed, glass lensed, metal can package. This package directly mounts in double sided PC boards.

DIM_002.ds4

INFRA--1.TIF

OUTLINE DIMENSIONS in inches (mm)3 plc decimals ±0.005(0.12)Tolerance

2 plc decimals ±0.020(0.51)

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h16

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

GaAs Infrared Emitting DiodeSE2460

ELECTRICAL CHARACTERISTICS

UNITS TEST CONDITIONSMINPARAMETER SYMBOL TYP MAX

ABSOLUTE MAXIMUM RATINGS

(25¡C Free-Air Temperature unless otherwise noted)

Continuous Forward Current 75 mAPower Dissipation 125 mW [À]

Operating Temperature Range -55¡C to 125¡CStorage Temperature Range -65¡C to 150¡CSoldering Temperature (10 sec) 260¡C

Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 1.19 mW/¡C,when soldered into a double sided printed circuit board.

SCHEMATIC

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h 17

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

GaAs Infrared Emitting DiodeSE2460

Radiant Intensity vsAngular Displacement gra_111.ds4

Angular displacement - degrees

Rel

ativ

e in

tens

ity

0.0

0.1

0.2

0.3 0.4

0.5

0.6

0.7

0.8 0.9

1.0

-40 -30 -20 -10 0 +10 +20 +30 +40

Fig. 1 Radiant Intensity vsForward Current gra_014.ds4

Forward current - mA

Nor

mal

ized

rad

iant

in

tens

ity

0.0

0.1 0.2

0.3 0.4

0.5

0.6

0.7

0.8

0.9

1.0

0.0 10.0 20.0 30.0 40.0 50.0

Fig. 2

Forward Voltage vsForward Current gra_203.ds4

Forward current - mA

For

war

d vo

ltage

- V

1.00

1.05

1.10

1.20

1.25

1.30

1.40

0 10 20 30 50 60 70 8040

1.15

1.35

Fig. 3 Forward Voltage vsTemperature gra_200.ds4

Temperature - °C

For

war

d vo

ltage

- V

1.00

1.05

1.10

1.15

1.20

1.25

1.30

1.35

1.40

-50 -25 0 25 50 75 100 125

IF = 20 mA

Fig. 4

Spectral Bandwidth gra_005.ds4

Wavelength - nm

Rel

ativ

e in

tens

ity

0.0

0.1 0.2

0.3 0.4

0.5 0.6

0.7

0.8 0.9

1.0

870 890 910 930 950 970 990 1010

Fig. 5 Coupling Characteristicswith SD2440 gra_015.ds4

Lens-to-lens separation - inches

Nor

mal

ized

ligh

t cu

rren

t

0.0

0.1

0.2

0.3 0.4

0.5

0.6

0.7

0.8

0.9

1.0

0.0 0.2 0.4 0.6 0.8 1.0 1.2

Fig. 6

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h18

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

GaAs Infrared Emitting DiodeSE2460

Normalized Power Output vsTemperature gra_131.ds4

Nor

mal

ized

pow

er o

utpu

t

0

.2

.4

.6

.8

1.0

1.2

1.4

1.61.8

2.0

TA - Ambient temperature - (°C)

-50 -25 0 +25 +50 +75 +100 +125

IF = 50 mA

IF = 20 mA

Fig. 7

All Performance Curves Show Typical Values

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h 19

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

AlGaAs Infrared Emitting DiodeSE2470

DESCRIPTION

FEATURESMiniature, hermetically sealed, pill style, metal can package

•

18¡ (nominal) beam angle•

Wide operating temperature range (­55¡C to +125¡C)

•

Higher power output than GaAs at equivalent drive currents

•

Ideal for direct mounting to printed circuit boards•

880 nm wavelength•

Mechanically and spectrally matched to SD2420 photodiode, SD2440 phototransistor and SD2410 photodarlington

•

The SE2470 is a high intensity aluminum gallium arsenide infrared emitting diode mounted in a hermetically sealed, glass lensed, metal can package. This package directly mounts in double sided PC boards. These devices typically exhibit 70% greater power intensity than gallium arsenide devices at the same forward current.

DIM_002.ds4

INFRA--1.TIF

OUTLINE DIMENSIONS in inches (mm)3 plc decimals ±0.005(0.12)Tolerance

2 plc decimals ±0.020(0.51)

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h20

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

AlGaAs Infrared Emitting DiodeSE2470

ELECTRICAL CHARACTERISTICS

UNITS TEST CONDITIONSMINPARAMETER SYMBOL TYP MAX

ABSOLUTE MAXIMUM RATINGS

(25¡C Free-Air Temperature unless otherwise noted)

Continuous Forward Current 75 mAPower Dissipation 125 mW [À]

Operating Temperature Range -55¡C to 125¡CStorage Temperature Range -65¡C to 150¡CSoldering Temperature (10 sec) 260¡C

Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 1.19 mW/¡C,when soldered into a double sided printed circuit board.

SCHEMATIC

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h 21

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

AlGaAs Infrared Emitting DiodeSE2470

Radiant Intensity vsAngular Displacement gra_111.ds4

Angular displacement - degrees

Rel

ativ

e in

tens

ity

0.0

0.1

0.2

0.3 0.4

0.5

0.6

0.7

0.8 0.9

1.0

-40 -30 -20 -10 0 +10 +20 +30 +40

Fig. 1 Radiant Intensity vsForward Current gra_016.ds4

Forward current - mA

Nor

mal

ized

rad

iant

in

tens

ity

0.0

0.1 0.2

0.3 0.4

0.5

0.6

0.7

0.8

0.9

1.0

0.0 10.0 20.0 30.0 40.0 50.0

Fig. 2

Forward Voltage vsForward Current gra_204.ds4

Forward current - mA

For

war

d vo

ltage

- V

1.0

1.1

1.2

1.4

1.5

1.6

1.8

0 10 20 30 50 60 70 8040

1.3

1.7

Fig. 3 Forward Voltage vsTemperature gra_202.ds4

Temperature - °C

For

war

d vo

ltage

- V

1.0

1.1

1.2

1.3

1.4

1.5

1.6

-50 -25 0 25 50 75 100 125

IF = 20 mA

Fig. 4

Spectral Bandwidth gra_011.ds4

Wavelength - nm

Rel

ativ

e in

tens

ity

0.0

0.1 0.2

0.3 0.4

0.5 0.6

0.7

0.8 0.9

1.0

760 800 840 880 920 960 1000

Fig. 5 Coupling Characteristicswith SD2440 gra_015.ds4

Lens-to-lens separation - inches

Nor

mal

ized

ligh

t cu

rren

t

0.0

0.1

0.2

0.3 0.4

0.5

0.6

0.7

0.8

0.9

1.0

0.0 0.2 0.4 0.6 0.8 1.0 1.2

Fig. 6

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h22

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

AlGaAs Infrared Emitting DiodeSE2470

Normalized Power Output vsTemperature gra_131.ds4

Nor

mal

ized

pow

er o

utpu

t

0

.2

.4

.6

.8

1.0

1.2

1.4

1.61.8

2.0

TA - Ambient temperature - (°C)

-50 -25 0 +25 +50 +75 +100 +125

IF = 50 mA

IF = 20 mA

Fig. 7

All Performance Curves Show Typical Values

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h 23

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

GaAs Infrared Emitting DiodeSE3450/5450

DESCRIPTION

FEATURESTO-46 metal can package•

Choice of flat window or lensed package•

90¡ or 20¡ (nominal) beam angle option•

935 nm wavelength•

Wide operating temperature range (­55¡C to +125¡C)

•

Mechanically and spectrally matched to SD3421/5421 photodiode, SD3443/5443/5491phototransistor, SD3410/5410 photodarlington and SD5600 series Schmitt trigger

•

The SE3450/5450 series consists of a gallium arsenide infrared emitting diode mounted in a TO-46 metal can package. The SE3450 series has flat window cans providing a wide beam angle, while the SE5450 series has glass lensed cans providing a narrow beam angle. The TO-46 packages offer high power dissipation capability and are ideally suited for operation in hostile environment.

INFRA-83.TIF

OUTLINE DIMENSIONS in inches (mm)3 plc decimals ±0.005(0.12)Tolerance

2 plc decimals ±0.020(0.51)

2. ANODE1. CATHODE (TAB)

LEADS:

.046(1.17)

.036(.91)

2

1

DIA.(.460)

.018

MIN.(12.70)

.500

(0.36).015

.140 (3.56)

.153 (3.89)

DIA..137 (3.48)

.160 (4.06)

.188 (4.77)

.178 (4.52)DIA.

DIA..208 (5.28).219 (5.56)

.100(2.54)DIA NOM

45°

.048(1.22)

.028(.71)

(CASE)

DIM_003a.ds4

SE3450

.046(1.17)

.036(.91)

2

1

DIA.(.460)

.018

MIN.(12.70)

.500

(0.36).015

5.08

.200

DIA..137 (3.48)

.160 (4.06)

.188 (4.77)

.178 (4.52)DIA.

DIA..208 (5.28).219 (5.56)

.100(2.54)DIA NOM

45°

.048(1.22)

.028(.71)

.224 (5.89)

.247 (6.27)2. ANODE1. CATHODE (TAB)

LEADS:

(CASE)

DIM_003b.ds4

SE5450

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h24

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

GaAs Infrared Emitting DiodeSE3450/5450

ELECTRICAL CHARACTERISTICS

UNITS TEST CONDITIONSMINPARAMETER SYMBOL TYP MAX

ABSOLUTE MAXIMUM RATINGS

(25¡C Free-Air Temperature unless otherwise noted)

Continuous Forward Current 100 mAPower Dissipation 150 mW [À]

Operating Temperature Range -55¡C to 125¡CStorage Temperature Range -65¡C to 150¡CSoldering Temperature (10 sec) 260¡C

Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 1.43 mW/¡C.

SCHEMATIC

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h 25

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

GaAs Infrared Emitting DiodeSE3450/5450

Radiant Intensity vsAngular Displacement (SE3450) gra_017.ds4

Angular displacement - degrees

Rel

ativ

e in

tens

ity

0.0

0.1

0.2

0.3 0.4

0.5

0.6

0.7

0.8 0.9

1.0

-60 -45 -30 -15 0 +15 +30 +45 +60

Fig. 1 Radiant Intensity vsAngular Displacement (SE5450) gra_023.ds4

Angular displacement - degrees

Rel

ativ

e in

tens

ity

0.0

0.1

0.2

0.3 0.4

0.5

0.6

0.7

0.8 0.9

1.0

-40 -30 -20 -10 0 +10 +20 +30 +40

Fig. 2

Radiant Intensity vsForward Current gra_018.ds4

Forward current - mA

Nor

mal

ized

rad

iant

in

tens

ity -

%

0.0

50

100

150

200

250

0 100 200 300 400 500

Pulsed

Fig. 3 Forward Voltage vsForward Current gra_205.ds4

Forward current - mA

For

war

d vo

ltage

- V

1.00

1.05

1.10

1.20

1.25

1.30

1.40

0 10 20 40 60 80 90 10050

1.15

1.35

30 70

Fig. 4

Forward Voltage vsTemperature gra_206.ds4

Temperature - °C

For

war

d vo

ltage

- V

1.20

1.25

1.30

1.35

1.40

1.45

1.50

1.55

1.60

-50 -25 0 25 50 75 100 125

IF = 100 mA

Fig. 5 Spectral Bandwidth gra_005.ds4

Wavelength - nm

Rel

ativ

e in

tens

ity

0.0

0.1 0.2

0.3 0.4

0.5 0.6

0.7

0.8 0.9

1.0

870 890 910 930 950 970 990 1010

Fig. 6

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h26

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

GaAs Infrared Emitting DiodeSE3450/5450

Coupling CharacteristicsSE3450 with SD3443 gra_021.ds4

Window-to-window distance - inches

Nor

mal

ized

ligh

t cu

rren

t

0.0

0.2

0.4

0.6

0.8

1.0

0.0 0.2 0.4 0.6 0.8 1.0

Fig. 7 Coupling CharacteristicsSE5450 with SD5443 gra_024.ds4

Lens-to-lens distance - inches

Nor

mal

ized

ligh

t cu

rren

t

0.0

0.2

0.4

0.6

0.8

1.0

0 2 4 6 7 9 1 3 5 8

Fig. 8

Radiant Intensity vsCase Temperature gra_022.ds4

Case temperature - °C

Nor

mal

ized

rad

iant

int e

nsity

0.1

0.2 0.3 0.4 0.5

1.0

2.0 3.0 4.0 5.0

-75 -50 -25 0 25 50 75 100 125

Normalized to IF = 100 mA TA = 25 °C

Fig. 9

All Performance Curves Show Typical Values

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h 27

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

GaAs Infrared Emitting DiodeSE3455/5455

DESCRIPTION

FEATURESTO-46 metal can package•

Choice of flat window or lensed package•

90¡ or 20¡ (nominal) beam angle option•

935 nm wavelength•

Wide operating temperature range (­55¡C to +125¡C)

•

Ideal for high pulsed current applications•

Mechanically and spectrally matched to SD3421/5421 photodiode, SD3443/5443/5491phototransistor, SD3410/5410 photodarlington and SD5600 series Schmitt trigger

•

The SE3455/5455 series consists of a gallium arsenide infrared emitting diode mounted in a TO-46 metal can package. The SE3455 series has flat window cans providing a wide beam angle, while the SE5455 series has glass lensed cans providing a narrow beam angle. These devices are constructed with dual bond wires suitable for pulsed current applications. The TO-46 packages offer high power dissipation capability and are ideally suited for operation in hostile environments.

INFRA-83.TIF

OUTLINE DIMENSIONS in inches (mm)3 plc decimals ±0.005(0.12)Tolerance

2 plc decimals ±0.020(0.51)

2. ANODE1. CATHODE (TAB)

LEADS:

.046(1.17)

.036(.91)

2

1

DIA.(.460)

.018

MIN.(12.70)

.500

(0.36).015

.140 (3.56)

.153 (3.89)

DIA..137 (3.48)

.160 (4.06)

.188 (4.77)

.178 (4.52)DIA.

DIA..208 (5.28).219 (5.56)

.100(2.54)DIA NOM

45°

.048(1.22)

.028(.71)

(CASE)

DIM_005a.ds4

SE3455

2. ANODE (CASE)1. CATHODE (TAB)

LEADS:

.046(1.17)

.036(.91)

2

1

DIA.(.460)

.018

MIN.(12.70)

.500

(0.36).015

5.08

.200

DIA..137 (3.48)

.160 (4.06)

.188 (4.77)

.178 (4.52)DIA.

DIA..208 (5.28).219 (5.56)

.100(2.54)DIA NOM

45°

.048(1.22)

.028(.71)

.224 (5.89)

.247 (6.27)

DIM_005b.ds4

SE5455

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h28

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

GaAs Infrared Emitting DiodeSE3455/5455

ELECTRICAL CHARACTERISTICS

UNITS TEST CONDITIONSMINPARAMETER SYMBOL TYP MAX

ABSOLUTE MAXIMUM RATINGS

(25¡C Free-Air Temperature unless otherwise noted)

Continuous Forward Current 100 mAPeak Forward Current 3 A

(1µs pulse width, 300 pps)Power Dissipation 150 mW [À] Operating Temperature Range -55¡C to 125¡C

Storage Temperature Range -65¡C to 150¡CSoldering Temperature (10 sec) 260¡C

Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 1.43 mW/¡C.

SCHEMATIC

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h 29

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

GaAs Infrared Emitting DiodeSE3455/5455

Radiant Intensity vsAngular Displacement (SE3455) gra_017.ds4

Angular displacement - degrees

Rel

ativ

e in

tens

ity

0.0

0.1

0.2

0.3 0.4

0.5

0.6

0.7

0.8 0.9

1.0

-60 -45 -30 -15 0 +15 +30 +45 +60

Fig. 1 Radiant Intensity vsAngular Displacement (SE5455) gra_023.ds4

Angular displacement - degrees

Rel

ativ

e in

tens

ity

0.0

0.1

0.2

0.3 0.4

0.5

0.6

0.7

0.8 0.9

1.0

-40 -30 -20 -10 0 +10 +20 +30 +40

Fig. 2

Radiant Intensity vsForward Current gra_018.ds4

Forward current - mA

Nor

mal

ized

rad

iant

in

tens

ity -

%

0.0

50

100

150

200

250

0 100 200 300 400 500

Pulsed

Fig. 3 Forward Voltage vsForward Current gra_019.ds4

Forward current - mA

For

war

d vo

ltage

- V

0.90

0.95

1.00

1.05 1.10

1.15

1.20

1.25

1.30 1.35

0 20 40 60 80 100

Fig. 4

Forward Voltage vsTemperature gra_020.ds4

Temperature - °C

For

war

d vo

ltage

- V

1.21

1.23

1.25

1.27

1.29

1.31

1.33

1.35

-30 -10 10 30 50 70 90

IF=100 mA

Fig. 5 Spectral Bandwidth gra_005.ds4

Wavelength - nm

Rel

ativ

e in

tens

ity

0.0

0.1 0.2

0.3 0.4

0.5 0.6

0.7

0.8 0.9

1.0

870 890 910 930 950 970 990 1010

Fig. 6

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h30

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

GaAs Infrared Emitting DiodeSE3455/5455

Coupling CharacteristicsSE3455 with SD3443 gra_021.ds4

Window-to-window distance - inches

Nor

mal

ized

ligh

t cu

rren

t

0.0

0.2

0.4

0.6

0.8

1.0

0.0 0.2 0.4 0.6 0.8 1.0

Fig. 7 Coupling CharacteristicsSE5455 with SD5443 gra_024.ds4

Lens-to-lens distance - inches

Nor

mal

ized

ligh

t cu

rren

t

0.0

0.2

0.4

0.6

0.8

1.0

0 2 4 6 7 9 1 3 5 8

Fig. 8

Radiant Intensity vsCase Temperature gra_022.ds4

Case temperature - °C

Nor

mal

ized

rad

iant

int e

nsity

0.1

0.2 0.3 0.4 0.5

1.0

2.0 3.0 4.0 5.0

-75 -50 -25 0 25 50 75 100 125

Normalized to IF = 100 mA TA = 25 °C

Fig. 9

All Performance Curves Show Typical Values

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h 31

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

AlGaAs Infrared Emitting DiodeSE3470/5470

DESCRIPTION

FEATURESTO-46 metal can package•

Choice of flat window or lensed package•

90¡ or 20¡ (nominal) beam angle option•

880 nm wavelength•

Higher output power than GaAs at equivalent drive currents

•

Wide operating temperature range (­55¡C to +125¡C)

•

Ideal for high pulsed current applications•

Mechanically and spectrally matched to SD3421/5421 photodiode, SD3443/5443/5491phototransistor, SD3410/5410 photodarlington and SD5600 series Schmitt trigger

•

The SE3470/5470 series consists of aluminum gallium arsenide infrared emitting diode mounted in a TO-46 metal can package. The SE3470 series has flat window cans providing a wide beam angle, while the SE5470 series has glass lensed cans providing a narrow beam angle. These devices typically exhibit 70% greater power output than gallium arsenide devices at the same forward current. The TO-46 packages offer high power dissipation capability and are ideally suited for operation in hostile environments.

INFRA-83.TIF

OUTLINE DIMENSIONS in inches (mm)3 plc decimals ±0.005(0.12)Tolerance

2 plc decimals ±0.020(0.51)

2. ANODE1. CATHODE (TAB)

LEADS:

.046(1.17)

.036(.91)

2

1

DIA.(.460)

.018

MIN.(12.70)

.500

(0.36).015

.140 (3.56)

.153 (3.89)

DIA..137 (3.48)

.160 (4.06)

.188 (4.77)

.178 (4.52)DIA.

DIA..208 (5.28).219 (5.56)

.100(2.54)DIA NOM

45°

.048(1.22)

.028(.71)

(CASE)

DIM_005a.ds4

SE3470

2. ANODE (CASE)1. CATHODE (TAB)

LEADS:

.046(1.17)

.036(.91)

2

1

DIA.(.460)

.018

MIN.(12.70)

.500

(0.36).015

5.08

.200

DIA..137 (3.48)

.160 (4.06)

.188 (4.77)

.178 (4.52)DIA.

DIA..208 (5.28).219 (5.56)

.100(2.54)DIA NOM

45°

.048(1.22)

.028(.71)

.224 (5.89)

.247 (6.27)

DIM_005b.ds4

SE5470

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h32

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

AlGaAs Infrared Emitting DiodeSE3470/5470

ELECTRICAL CHARACTERISTICS

UNITS TEST CONDITIONSMINPARAMETER SYMBOL TYP MAX

ABSOLUTE MAXIMUM RATINGS

(25¡C Free-Air Temperature unless otherwise noted)

Continuous Forward Current 100 mAPeak Forward Current 3 A

(1µs pulse width, 300 pps)Power Dissipation 150 mW [À] Operating Temperature Range -55¡C to 125¡C

Storage Temperature Range -65¡C to 150¡CSoldering Temperature (10 sec) 260¡C

Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 1.43 mW/¡C.

SCHEMATIC

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h 33

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

AlGaAs Infrared Emitting DiodeSE3470/5470

Radiant Intensity vsAngular Displacement (SE3470) gra_017.ds4

Angular displacement - degrees

Rel

ativ

e in

tens

ity

0.0

0.1

0.2

0.3 0.4

0.5

0.6

0.7

0.8 0.9

1.0

-60 -45 -30 -15 0 +15 +30 +45 +60

Fig. 1 Radiant Intensity vsAngular Displacement (SE5470) gra_023.ds4

Angular displacement - degrees

Rel

ativ

e in

tens

ity

0.0

0.1

0.2

0.3 0.4

0.5

0.6

0.7

0.8 0.9

1.0

-40 -30 -20 -10 0 +10 +20 +30 +40

Fig. 2

Radiant Intensity vsForward Current gra_018.ds4

Forward current - mA

Nor

mal

ized

rad

iant

in

tens

ity -

%

0.0

50

100

150

200

250

0 100 200 300 400 500

Pulsed

Fig. 3 Forward Voltage vsForward Current gra_026.ds4

Forward current - mA

For

war

d vo

ltage

- V

1.0

1.1

1.2

1.3

1.4

1.5

1.6

0 20 40 60 80 100

Fig. 4

Forward Voltage vsTemperature gra_025.ds4

Temperature - C

For

war

d vo

ltage

- V

1.30

1.35

1.45

1.50

1.60

1.65

1.70

-50 -25 0 25 50 75 100 125

I

1.55

1.40

Fig. 5 Coupling CharacteristicsSE3470 with SD3443 gra_021.ds4

Window-to-window distance - inches

Nor

mal

ized

ligh

t cu

rren

t

0.0

0.2

0.4

0.6

0.8

1.0

0.0 0.2 0.4 0.6 0.8 1.0

Fig. 6

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h34

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

AlGaAs Infrared Emitting DiodeSE3470/5470

Spectral Bandwidth gra_011.ds4

Wavelength - nm

Rel

ativ

e in

tens

ity

0.0

0.1 0.2

0.3 0.4

0.5 0.6

0.7

0.8 0.9

1.0

760 800 840 880 920 960 1000

Fig. 7 Radiant Intensity vsCase Temperature gra_022.ds4

Case temperature - °C

Nor

mal

ized

rad

iant

int e

nsity

0.1

0.2 0.3 0.4 0.5

1.0

2.0 3.0 4.0 5.0

-75 -50 -25 0 25 50 75 100 125

Normalized to IF = 100 mA TA = 25 °C

Fig. 8

Coupling CharacteristicsSE5470 with SD5443 gra_024.ds4

Lens-to-lens distance - inches

Nor

mal

ized

ligh

t cu

rren

t

0.0

0.2

0.4

0.6

0.8

1.0

0 2 4 6 7 9 1 3 5 8

Fig. 9

All Performance Curves Show Typical Values

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h 35

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

GaAs Infrared Emitting DiodeSEP8505

DESCRIPTION

FEATUREST-1 package•

15¡ (nominal) beam angle•

935 nm wavelength•

Consistent on-axis optical properties•

Mechanically and spectrally matched to SDP8405 phototransistor and SDP8105 photodarlington

•

The SEP8505 is a gallium arsenide infrared emitting diode transfer molded in a T-1 red plastic package. Transfer molding of this device assures superior optical centerline performance compared to other molding processes. Lead lengths are staggered to provide a simple method of polarity identification.

(.51)

.020 SQ. LEAD TYP

.050

(1.27)

DIA.(3.94)

.155

ANODE

CATHODE

DIA..125 (3.18)

.115 (2.92)

MIN.(12.7).500

.03(.76).180 (4.57)

.200 (5.08)

MAX.(6.35).250

.05(1.27)

DIM_101.ds4

INFRA-55.TIF

OUTLINE DIMENSIONS in inches (mm)3 plc decimals ±0.005(0.12)Tolerance

2 plc decimals ±0.020(0.51)

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h36

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

GaAs Infrared Emitting DiodeSEP8505

ELECTRICAL CHARACTERISTICS

UNITS TEST CONDITIONSMINPARAMETER SYMBOL TYP MAX

ABSOLUTE MAXIMUM RATINGS

(25¡C Free-Air Temperature unless otherwise noted)

Continuous Forward Current 50 mAPower Dissipation 70 mW [À]

Operating Temperature Range -40¡C to 85¡CStorage Temperature Range -40¡C to 85¡CSoldering Temperature (5 sec) 240¡C

Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.18 mW/¡C.

SCHEMATIC

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h 37

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GaAs Infrared Emitting DiodeSEP8505

Radiant Intensity vsAngular Displacement gra_027.ds4

Angular displacement - degrees

Rel

ativ

e in

tens

ity

0.0

0.1

0.2

0.3 0.4

0.5

0.6

0.7

0.8 0.9

1.0

-40 -30 -20 -10 0 +10 +20 +30 +40

Fig. 1 Radiant Intensity vsForward Current gra_028.ds4

Forward current - mA

Nor

mal

ized

rad

iant

int e

nsity

0.1

0.2

0.5

1.0

2.0

5.0

10.0

10 20 30 40 50 100

TA = 25 °C

Fig. 2

Forward Voltage vsForward Current gra_003.ds4

Forward current - mA

For

war

d vo

ltage

- V

1.05

1.10

1.15

1.20

1.25

1.30

1.35

1.40

0 20 40 60

Fig. 3 Forward Voltage vsTemperature gra_207.ds4

Temperature - °C

For

war

d vo

ltage

- V

1.00

1.05

1.15

1.20

1.30

1.35

1.40

-40 -15 10 35 60 85

IF = 20 mA

1.25

1.10

Fig. 4

Spectral Bandwidth gra_005.ds4

Wavelength - nm

Rel

ativ

e in

tens

ity

0.0

0.1 0.2

0.3 0.4

0.5 0.6

0.7

0.8 0.9

1.0

870 890 910 930 950 970 990 1010

Fig. 5 Coupling Characteristicswith SDP8405 gra_029.ds4

Lens-to-lens separation - inches

Ligh

t cu

rren

t - m

A

0.1

0.2

0.4

1

2

4

10

0.01 0.2 0.4 0.7 1 0.02 0.04 0.1

0.7

7

VCE = 5 VIF = 25 mATA = 25 °C

Fig. 6

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h38

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

GaAs Infrared Emitting DiodeSEP8505

Relative Power Output vsFree Air Temperature gra_130.ds4

TA - Free-air temperature - (°C)

Rel

ativ

e po

wer

out

put

0.1

1.0

10

-50 -25 0 +25 +50 +75 +100

0.2

0.5

2.0

5.0

IF = 30 mAIF = 20 mA

IF = 10 mA

IF = 40 mA

Fig. 7

All Performance Curves Show Typical Values

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h 39

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

GaAs Infrared Emitting DiodeSEP8506

DESCRIPTION

FEATURESSide-emitting plastic package•

50¡ (nominal) beam angle•

935 nm wavelength•

Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger

•

The SEP8506 is a gallium arsenide infrared emitting diode molded in a side-emitting red plastic package. The chip is positioned to emit radiation through a plastic lens from the side of the package.

DIM_071.ds4

INFRA-20.TIF

OUTLINE DIMENSIONS in inches (mm)3 plc decimals ±0.005(0.12)Tolerance

2 plc decimals ±0.020(0.51)

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h40

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

GaAs Infrared Emitting DiodeSEP8506

ELECTRICAL CHARACTERISTICS

UNITS TEST CONDITIONSMINPARAMETER SYMBOL TYP MAX

ABSOLUTE MAXIMUM RATINGS

(25¡C Free-Air Temperature unless otherwise noted)

Continuous Forward Current 50 mAPower Dissipation 100 mW [À]

Storage Temperature Range -40¡C to 85¡COperating Temperature Range -40¡C to 85¡CSoldering Temperature (5 sec) 240¡C

Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.78 mW/¡C.

SCHEMATIC

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h 41

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

GaAs Infrared Emitting DiodeSEP8506

Radiant Intensity vsAngular Displacement gra_030.ds4

Angular displacement - degrees

Rel

ativ

e in

tens

ity

0.0

0.1

0.2

0.3 0.4

0.5

0.6

0.7

0.8 0.9

1.0

-60 -45 -30 -15 0 +15 +30 +45 +60

Fig. 1 Radiant Intensity vsForward Current gra_028.ds4

Forward current - mA

Nor

mal

ized

rad

iant

int e

nsity

0.1

0.2

0.5

1.0

2.0

5.0

10.0

10 20 30 40 50 100

TA = 25 °C

Fig. 2

Forward Voltage vsForward Current gra_003.ds4

Forward current - mA

For

war

d vo

ltage

- V

1.05

1.10

1.15

1.20

1.25

1.30

1.35

1.40

0 20 40 60

Fig. 3 Forward Voltage vsTemperature gra_207.ds4

Temperature - °C

For

war

d vo

ltage

- V

1.00

1.05

1.15

1.20

1.30

1.35

1.40

-40 -15 10 35 60 85

IF = 20 mA

1.25

1.10

Fig. 4

Spectral Bandwidth gra_005.ds4

Wavelength - nm

Rel

ativ

e in

tens

ity

0.0

0.1 0.2

0.3 0.4

0.5 0.6

0.7

0.8 0.9

1.0

870 890 910 930 950 970 990 1010

Fig. 5 Coupling Characteristicswith SDP8406 gra_031.ds4

Lens-to-lens separation - inches

Ligh

t cur

rent

- m

A

0.1

0.2

0.4 0.6

1.0

2

4 6

10

0.01 0.02 0.05 0.1 0.2 0.5 1.0

IF = 20 mAVCE = 5V

TA = 25 °C

Fig. 6

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h42

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

GaAs Infrared Emitting DiodeSEP8506

Relative Power Output vsFree Air Temperature gra_130.ds4

TA - Free-air temperature - (°C)

Rel

ativ

e po

wer

out

put

0.1

1.0

10

-50 -25 0 +25 +50 +75 +100

0.2

0.5

2.0

5.0

IF = 30 mAIF = 20 mA

IF = 10 mA

IF = 40 mA

Fig. 7

All Performance Curves Show Typical Values

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h 43

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

GaAs Infrared Emitting DiodeSEP8507

DESCRIPTION

FEATURESEnd-emitting plastic package•

135¡ (nominal) beam angle•

935 nm wavelength•

Low profile for design flexibility•

Mechanically and spectrally matched to SDP8407 phototransistor

•

The SEP8507 is a gallium arsenide infrared emitting diode molded in an end-emitting red plastic package. The chip is positioned to emit radiation from the top of the package. Lead lengths are staggered to provide a simple method of polarity identification.

DIM_009.cdr

INFRA-18.TIF

OUTLINE DIMENSIONS in inches (mm)3 plc decimals ±0.008(0.20)Tolerance

2 plc decimals ±0.020(0.51)

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h44

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

GaAs Infrared Emitting DiodeSEP8507

ELECTRICAL CHARACTERISTICS

UNITS TEST CONDITIONSMINPARAMETER SYMBOL TYP MAX

ABSOLUTE MAXIMUM RATINGS

(25¡C Free-Air Temperature unless otherwise noted)

Continuous Forward Current 60 mAPower Dissipation 100 mW [À]

Operating Temperature Range -40¡C to 85¡CStorage Temperature Range -40¡C to 85¡CSoldering Temperature (5 sec) 240¡C

Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.66 mW/¡C.

SCHEMATIC

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h 45

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

GaAs Infrared Emitting DiodeSEP8507

Radiant Intensity vsAngular Displacement gra_032.ds4

Angular displacement - degrees

Rel

ativ

e in

tens

ity

0.0

0.1 0.2

0.3 0.4

0.5

0.6 0.7

0.8 0.9

1.0

-160 -120 -80 -40 0 +40 +80 +120 +160

Fig. 1 Radiant Intensity vsForward Current gra_028.ds4

Forward current - mA

Nor

mal

ized

rad

iant

int e

nsity

0.1

0.2

0.5

1.0

2.0

5.0

10.0

10 20 30 40 50 100

TA = 25 °C

Fig. 2

Forward Voltage vsForward Current gra_003.ds4

Forward current - mA

For

war

d vo

ltage

- V

1.05

1.10

1.15

1.20

1.25

1.30

1.35

1.40

0 20 40 60

Fig. 3 Forward Voltage vsTemperature gra_207.ds4

Temperature - °C

For

war

d vo

ltage

- V

1.00

1.05

1.15

1.20

1.30

1.35

1.40

-40 -15 10 35 60 85

IF = 20 mA

1.25

1.10

Fig. 4

Spectral Bandwidth gra_005.ds4

Wavelength - nm

Rel

ativ

e in

tens

ity

0.0

0.1 0.2

0.3 0.4

0.5 0.6

0.7

0.8 0.9

1.0

870 890 910 930 950 970 990 1010

Fig. 5 Relative Power Output vsFree Air Temperature gra_130.ds4

TA - Free-air temperature - (°C)

Rel

ativ

e po

wer

out

put

0.1

1.0

10

-50 -25 0 +25 +50 +75 +100

0.2

0.5

2.0

5.0

IF = 30 mAIF = 20 mA

IF = 10 mA

IF = 40 mA

Fig. 6

All Performance Curves Show Typical Values

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h46

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

GaAs Infrared Emitting DiodeSEP8507

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h 47

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

AlGaAs Infrared Emitting DiodeSEP8705

DESCRIPTION

FEATUREST-1 package•

15¡ (nominal) beam angle•

880 nm wavelength•

Consistent optical properties•

Higher output than GaAs at equivalent drive current

•

Mechanically and spectrally matched to SDP8405 phototransistor and SDP8105 photodarlington

•

The SEP8705 is an aluminum gallium arsenide infrared emitting diode transfer molded in a T-1 smoke gray plastic package. Transfer molding of this device assures superior optical centerline performance compared to other molding processes. These devices typically exhibit 70% greater power intensity compared to GaAs devices at the same forward current. Lead lengths are staggered to provide a simple method of polarity identification.

(.51)

.020 SQ. LEAD TYP

.050

(1.27)

DIA.(3.94)

.155

ANODE

CATHODE

DIA..125 (3.18)

.115 (2.92)

MIN.(12.7).500

.03(.76).180 (4.57)

.200 (5.08)

MAX.(6.35).250

.05(1.27)

DIM_101.ds4

INFRA-55.TIF

OUTLINE DIMENSIONS in inches (mm)3 plc decimals ±0.005(0.12)Tolerance

2 plc decimals ±0.020(0.51)

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h48

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

AlGaAs Infrared Emitting DiodeSEP8705

ELECTRICAL CHARACTERISTICS

UNITS TEST CONDITIONSMINPARAMETER SYMBOL TYP MAX

ABSOLUTE MAXIMUM RATINGS

(25¡C Free-Air Temperature unless otherwise noted)

Continuous Forward Current 50 mAPower Dissipation 70 mW [À]

Operating Temperature Range -40¡C to 85¡CStorage Temperature Range -40¡C to 85¡CSoldering Temperature (5 sec) 240¡C

Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.18 mW/¡C.

SCHEMATIC

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h 49

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

AlGaAs Infrared Emitting DiodeSEP8705

Radiant Intensity vsAngular Displacement gra_027.ds4

Angular displacement - degrees

Rel

ativ

e in

tens

ity

0.0

0.1

0.2

0.3 0.4

0.5

0.6

0.7

0.8 0.9

1.0

-40 -30 -20 -10 0 +10 +20 +30 +40

Fig. 1 Radiant Intensity vsForward Current gra_028.ds4

Forward current - mA

Nor

mal

ized

rad

iant

int e

nsity

0.1

0.2

0.5

1.0

2.0

5.0

10.0

10 20 30 40 50 100

TA = 25 °C

Fig. 2

Forward Voltage vsForward Current gra_201.ds4

Forward current - mA

For

war

d vo

ltage

- V

1.0

1.1

1.2

1.3

1.4

1.5

1.6

0 10 20 30 40 50

Fig. 3 Forward Voltage vsTemperature gra_208.ds4

Temperature - °C

For

war

d vo

ltage

- V

1.20

1.25

1.35

1.40

1.50

1.55

1.60

-40 -15 10 35 60 85

IF = 20 mA

1.45

1.30

Fig. 4

Spectral Bandwidth gra_011.ds4

Wavelength - nm

Rel

ativ

e in

tens

ity

0.0

0.1 0.2

0.3 0.4

0.5 0.6

0.7

0.8 0.9

1.0

760 800 840 880 920 960 1000

Fig. 5 Coupling Characteristicswith SDP8405 gra_029.ds4

Lens-to-lens separation - inches

Ligh

t cu

rren

t - m

A

0.1

0.2

0.4

1

2

4

10

0.01 0.2 0.4 0.7 1 0.02 0.04 0.1

0.7

7

VCE = 5 VIF = 25 mATA = 25 °C

Fig. 6

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h50

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

AlGaAs Infrared Emitting DiodeSEP8705

Relative Power Output vsFree Air Temperature gra_130.ds4

TA - Free-air temperature - (°C)

Rel

ativ

e po

wer

out

put

0.1

1.0

10

-50 -25 0 +25 +50 +75 +100

0.2

0.5

2.0

5.0

IF = 30 mAIF = 20 mA

IF = 10 mA

IF = 40 mA

Fig. 7

All Performance Curves Show Typical Values

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h 51

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

AlGaAs Infrared Emitting DiodeSEP8706

DESCRIPTION

FEATURESSide-looking plastic package•

50¡ (nominal) beam angle•

880 nm wavelength•

Higher output power than GaAs at equivalent drive currents

•

Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger

•

The SEP8706 is an aluminum gallium arsenide infrared emitting diode molded in a side-emitting smoke gray plastic package. The chip is positioned to emit radiation through a plastic lens from the side of the package. These devices typically exhibit 70% greater power intensity than gallium arsenide devices at the same forward current.

DIM_071.ds4

INFRA-20.TIF

OUTLINE DIMENSIONS in inches (mm)3 plc decimals ±0.005(0.12)Tolerance

2 plc decimals ±0.020(0.51)

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h52

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

AlGaAs Infrared Emitting DiodeSEP8706

ELECTRICAL CHARACTERISTICS

UNITS TEST CONDITIONSMINPARAMETER SYMBOL TYP MAX

ABSOLUTE MAXIMUM RATINGS

(25¡C Free-Air Temperature unless otherwise noted)

Continuous Forward Current 50 mAPower Dissipation 100 mW [À]

Operating Temperature Range -40¡C to 85¡CStorage Temperature Range -40¡C to 85¡CSoldering Temperature (5 sec) 240¡C

Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.78 mW/¡C.

SCHEMATIC

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h 53

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

AlGaAs Infrared Emitting DiodeSEP8706

Radiant Intensity vsAngular Displacement gra_030.ds4

Angular displacement - degrees

Rel

ativ

e in

tens

ity

0.0

0.1

0.2

0.3 0.4

0.5

0.6

0.7

0.8 0.9

1.0

-60 -45 -30 -15 0 +15 +30 +45 +60

Fig. 1 Radiant Intensity vsForward Current gra_028.ds4

Forward current - mA

Nor

mal

ized

rad

iant

int e

nsity

0.1

0.2

0.5

1.0

2.0

5.0

10.0

10 20 30 40 50 100

TA = 25 °C

Fig. 2

Forward Voltage vsForward Current gra_201.ds4

Forward current - mA

For

war

d vo

ltage

- V

1.0

1.1

1.2

1.3

1.4

1.5

1.6

0 10 20 30 40 50

Fig. 3 Forward Voltage vsTemperature gra_208.ds4

Temperature - °C

For

war

d vo

ltage

- V

1.20

1.25

1.35

1.40

1.50

1.55

1.60

-40 -15 10 35 60 85

IF = 20 mA

1.45

1.30

Fig. 4

Spectral Bandwidth gra_011.ds4

Wavelength - nm

Rel

ativ

e in

tens

ity

0.0

0.1 0.2

0.3 0.4

0.5 0.6

0.7

0.8 0.9

1.0

760 800 840 880 920 960 1000

Fig. 5 Coupling Characteristicswith SDP8406 gra_031.ds4

Lens-to-lens separation - inches

Ligh

t cur

rent

- m

A

0.1

0.2

0.4 0.6

1.0

2

4 6

10

0.01 0.02 0.05 0.1 0.2 0.5 1.0

IF = 20 mAVCE = 5V

TA = 25 °C

Fig. 6

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h54

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

AlGaAs Infrared Emitting DiodeSEP8706

Relative Power Output vsFree Air Temperature gra_130.ds4

TA - Free-air temperature - (°C)

Rel

ativ

e po

wer

out

put

0.1

1.0

10

-50 -25 0 +25 +50 +75 +100

0.2

0.5

2.0

5.0

IF = 30 mAIF = 20 mA

IF = 10 mA

IF = 40 mA

Fig. 7

All Performance Curves Show Typical Values

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h 55

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

AlGaAs Infrared Emitting DiodeSEP8736

DESCRIPTION

FEATURESSide-looking plastic package•

10¡ (nominal) beam angle•

880 nm wavelength•

Enhanced coupling distance•

Mechanically and spectrally matched to SDP8436 phototransistor

•

The SEP8736 is an aluminum gallium arsenide infrared emitting diode molded in a side-emitting smoke gray plastic package. The body and integral lens design combines the mounting advantage of a side-emitting package with the narrow emission pattern of a T-1 style device. The SEP8736 IRED is designed for those applications which require longer coupling distances than standard side-emitting devices can provide, such as touch screens. The IRED is also especially well suited to applications in which adjacent channel crosstalk could be a problem.

DIM_070.ds4

INFRA-80.TIF

OUTLINE DIMENSIONS in inches (mm)3 plc decimals ±0.005(0.12)Tolerance

2 plc decimals ±0.020(0.51)

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h56

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

AlGaAs Infrared Emitting DiodeSEP8736

ELECTRICAL CHARACTERISTICS

UNITS TEST CONDITIONSMINPARAMETER SYMBOL TYP MAX

ABSOLUTE MAXIMUM RATINGS

(25¡C Free-Air Temperature unless otherwise noted)

Continuous Forward Current 50 mAPower Dissipation 100 mW [À]

Operating Temperature Range -40¡C to 85¡CStorage Temperature Range -40¡C to 85¡CSoldering Temperature (5 sec) 240¡C

Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.78 mW/¡C.

SCHEMATIC

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h 57

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

AlGaAs Infrared Emitting DiodeSEP8736

Radiant Intensity vsAngular Displacement gra_097.ds4

Angular displacement - degrees

Rel

ativ

e in

tens

ity

0.0

0.1

0.2

0.3 0.4

0.5

0.6

0.7

0.8 0.9

1.0

-40 -30 -20 -10 0 +10 +20 +30 +40

Fig. 1 Radiant Intensity vsForward Current gra_033.ds4

Forward current - mA

Nor

mal

ized

rad

iant

in

tens

ity

0.01

0.10

1.00

10.00

0.1 1.0 10 100

TA = 25 °C

Fig. 2

Forward Voltage vsForward Current gra_201.ds4

Forward current - mA

For

war

d vo

ltage

- V

1.0

1.1

1.2

1.3

1.4

1.5

1.6

0 10 20 30 40 50

Fig. 3 Forward Voltage vsTemperature gra_208.ds4

Temperature - °C

For

war

d vo

ltage

- V

1.20

1.25

1.35

1.40

1.50

1.55

1.60

-40 -15 10 35 60 85

IF = 20 mA

1.45

1.30

Fig. 4

Spectral Bandwidth gra_011.ds4

Wavelength - nm

Rel

ativ

e in

tens

ity

0.0

0.1 0.2

0.3 0.4

0.5 0.6

0.7

0.8 0.9

1.0

760 800 840 880 920 960 1000

Fig. 5 Coupling Characteristicswith SDP8436 gra_034.ds4

Lens-to-lens separation - inches

Nor

mal

ized

ligh

t cu

rren

t

0.001

0.1

1.0

10

0.1 1.0 10

0.01

Fig. 6

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h58

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com

AlGaAs Infrared Emitting DiodeSEP8736

Relative Power Output vsFree Air Temperature gra_130.ds4

TA - Free-air temperature - (°C)

Rel

ativ

e po

wer

out

put

0.1

1.0

10

-50 -25 0 +25 +50 +75 +100

0.2

0.5

2.0

5.0

IF = 30 mAIF = 20 mA

IF = 10 mA

IF = 40 mA

Fig. 7

All Performance Curves Show Typical Values

Honeywell reserves the right to make changes in order to improve design and supply the best products possible.

h 59

Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com