Embedded Memories

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Embedded Memories CSE 291E / EE260C Spring 2002

Transcript of Embedded Memories

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Embedded Memories

CSE 291E / EE260CSpring 2002

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Outline• Embedded Memories

– How memory fits into the roadmap

• Memory Technology– SRAM, DRAM, ROM, Flash

• DRAM Memory Architectures– Page Mode, SDRAM, Rambus

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Introduction• Every embedded system needs memory

– Buffering, Work Space, Instruction and Data Store• Fast growing, increasingly integrated• What are the needs of system?

– High Bandwidth– Low Latency– Low Area/Cost– Non-volatility (in some cases)– Writable (in most cases)

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Embedded Memory Importance

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Memory

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Memory with col

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Memory with Col and Bank

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Options• SRAM

Pros: Fast, availableCons: Volatile, Large Area

• ROMPros: Fast, Non-volatile, Extremely denseCons: Can’t write, Requires data at fabrication

• DRAMPros: Very Dense, WritableCons: Slow, Volatile, Requires refresh, Special process

• FlashPros: Dense, Writable and Non-VolatileCons: Special Process, Slow

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SRAM Cell• Basic 6-T SRAM cell• Stores the value in a pair of inverters• Both the value and it’s complement are read out• Gates connected to the word line control access

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SRAM: How it works• Two modes of operation that share lines

– Read and Write• Read Mode:

– Both bit-lines must start out high, one of the two lines gets but pulled low (the pull-down is stronger than the bit-line) and this is how the result is read.

• Write Mode– In order to perform a read, one bit line is set high

and the other is set low. The pull down overpowers the value stored in the cell and you data is now stored in the cell

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SRAM Cell

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SRAM 2-Port

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ROM• SRAM is big, 6-T for a single cell• If we know at fabrication time what the contents

will be, and we don’t need to write them what can we do better?– Hard wire the values into the memory

• Very dense layout• Very fast operation• Two types of ROM

– Mask programmable– Diffusion programmable

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NOR ROM

Transistor at a zero

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NOR ROM Layout

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NAND ROM

All WL high except selected row

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NAND ROM Layout

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Memory Comparison

0.35um CMOS (austria microsystems)

1-Port SRAM 4k bit 8k bit 16k bit 32k bit 64k bitArea (mm2) 0.44 0.7 1.24 2.18 3.93Delay (ns) 2.83 2.96 3.05 3.86 4.68

Power (mA/MHz) 0.15 0.175 0.18 0.226 0.285

2-Port SRAM 4k bit 8k bit 16k bit 32k bit 64k bitArea 170% 180% 180% 173% 182%Delay 118% 116% 116% 114% 100%Power 159% 146% 155% 160% 141%

Diffused ROM 4k bit 8k bit 16k bit 32k bit 64k bitArea 27% 23% 18% 15% 13%Delay 101% 106% 107% 95% 81%Power 59% 69% 77% 76% 100%

• All available today

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Memory Technology: DRAM• All we need to do is store a bit

– then read it out right• Instead of storing the bit in a transistor

– Use a capacitor• DRAMs use a transistor to guard a capacitor

– Put data in, and disconnect it– Reconnect and read it out

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DRAM Cell

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DRAM Details• Pros

Tiny design: 1 Transistor + 1 capacitor• One one word line and one bit line• In reality these to are even built on top of one another

• Cons– Capacitor Design: Very small, high cap, 3D structures– Sense Amp Design: Small voltage (~100e) – Destructive Read: Spill the entire contents onto bit-line– Refresh: Puts the Dynamic in Dynamic RAM– Speed: Slower (tiny voltages, built for density)

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DRAM structures

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Flash

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Flash Details• Pros:

– High density– Writable and Readable– Store multiple bits per cell (multi-valued)– Non-volatile– Increasingly available for SOC

• Cons:– Slow (90ns)– Field erase

• Have to erase a whole section of the chip• Erase sets the bits to ‘1’, writing to them can turn them to ‘0’

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DRAM Memory Architectures• Even if the memory arrays are the same

– The interface and interconnect can be different• Discuss 4 types of DRAM architectures

– FPM, EDO, SDRAM, Rambus• All are built on the same basic memory tile

– Difference lies in how data is accessed– And how the bus is designed

• All need to send a row address and a collumn address

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FPM

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FPM Timing

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EDO

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EDO Timing

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SDRAM Timing

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Rambus

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SDRAM

Addr

Data…

64b 8b

• Large bus (64 bits)• 4 Banks per device, 4 banks total

– Banks are across the devices

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Rambus

Addr

Data

• Address and Data are uniformly loaded• 4 banks per device, 32 banks total (additive)• Reduces bank conflict probability

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Summary• Now you should know (at least at a high level)

– How a SRAM works– How a ROM works– How a DRAM works– How Flash memory works– How to pick between them for your designs

– What the differences are between• FPM, EDO, SDRAM, and Rambus