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Transcript of Ellipsometer UNECS presentation for UCLA website UNECS presentation for UCLA website Author...
Confidential
UNECS series
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UNECS seriesCompact, High-Speed Spectroscopic Ellipsometer
ULVAC Technologies, Inc.
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History of History of ULVAC EllipsometersULVAC Ellipsometers
ULVAC released the single wavelength ellipsometer ESM series productsabout 30 years ago.
Until now, hundreds of ESM series products have been installed for ourcustomers for the industrial and R&D purposes all over the world.
Several years ago, we developed the UNECS series spectroscopicellipsometers and released them in 2011.
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ESM-1A(Φ150mm)
UNECS-3000A(Φ300mm)
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UNECS-1500A/2000A
UNECS Family
UNECS-Portable
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UNECS-1500M UNECS-3000A
Key features are as follows;- High speed measurement (20msec)- User friendly operation and software- Easy maintenance.
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ULVAC can offer Optical components (light source, Spectrometer) and software for OEM application.
UNECS Family
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UNECS-1M
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Phase modulation typeElement rotation typeConventional Methods used by Competitors
High-Speed Measurement and compact
~V
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Polarization control by electrical signals on the optical element
Polarization control by rotating optical elements
The configuration of sensor is complicated and large.Measurement time is SLOW because adjustments is needed by temporal
transition.
These methods make it difficult to reduce size and measurement time
~V
ConfidentialHigh-Speed Measurement
High-Speed MeasurementSnapshot method of measurement using high order retarders makes high-speed (min.20ms) measurement possible.
Snapshot with “fixed” module is like cameraThis configuration results in a compact design
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2015/4/8AnalyzerRetarder2
Sample
SpectrometerHalogen lamp
Light polarizer Retarder1
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High Speed MeasurementHigh order retarders are utilized to generate the spectrum carrying information about the wavelength-dependant parameters of polarized light. It requires no mechanical or active components for polarization control such as a rotating compensator or electro optic modulator. Data acquisition time is 20 ms per measurement of the range of wavelength .
Compact Design
Features of Features of UNECSUNECS
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Compact DesignThe size of sensor unit is very small due to the use of high order wavelength plates. The built in light source and controller are mounted into a well designed compact enclosure.
Excellent Cost PerformanceThe only maintenance required is replacing the light source.
ConfidentialFeatures of UNECSFeatures of UNECSCustomized Material Table Files
Users can easily edit and add material table files for their own applications. Special material files can be created based on standard film models to measure special films.
Multi-layer MeasurementIt is possible to measure a multi-layer film thicknesses of up to 6 layers.
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It is possible to measure a multi-layer film thicknesses of up to 6 layers.
Auto-Mapping function availableAutomatic model have Mapping function.
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(1) OLED:Alq3/glass substrate single layer filmGlassAlq3
Sample A B C D Measuring Instrument
R.I. Thickness R.I. Thickness R.I. Thickness R.I. ThicknessN D(nm) N D(nm) N D(nm) N D(nm)
UNECS 1.712 118.5 1.728 115.8 1.731 115.0 1.729 112.1
Data example(OLED, PV)UNECS data shows similar data as the Stylus method profiler .
Reliability data
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(2) Thin film PV:SiO2(Silica)/μc-Si/ glass substrate 2 layers filmsGlassμc-SiSiO2
Sample A B C Measuring Instrument μc-Si SiO2 μc-Si
+SiO2 μc-Si SiO2 μc-Si +SiO2 μc-Si SiO2 μc-Si
+SiO2
UNECS 509.9 18.2 528.1 523.2 13.8 537.0 518.8 21.7 540.4Stylus
Profiler - - 525.4 - - 541.4 - - 546.3
UNECS 1.712 118.5 1.728 115.8 1.731 115.0 1.729 112.1Stylus Profiler - 118.4 - 111.8 - 116.1 - 109.3
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Measured value*1)
Repeatability σ
SiO2 thickness 1.96 nm 0.03 nm
Measured value*1)
Repeatability σ
Resists thickness(Designed value 50nm)
50.95 nm 0.05 nm
Resists refractive index
1.576 0.02
Si substrate
SiO2(1) SiO2 single-layer filmSi substrate
Resists(2) Resists single layer film(thickness and refractive index is measured at the same time)
GOOD REPEATABILITY
Reliability data Example (SiO2, Resists)
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index
Measured value*1)
Repeatability σ
Resists thickness(Designed value 50nm)
48.17 nm 0.72 nm
BARC thickness(Designed value 65nm)
67.16 nm 0.76 nm
Measured value*1)
Repeatability σ
Top coating thickness(designed value 30nm)
28.79 nm 0.05 nm
Top coating refractive index 1.342 0.001
Remarks: Repeatability is the standard deviation of 10 times consecutive measurements (1σ).
Si substrate
BARC
Resists(3) Resists/ BARC 2 layer film
Si substrate
BARC
Resists
Top coating(4) Resists 3 layer film(Thickness and refractive index is measured at the same time)
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Measurement Data(ITO Film)
ITO single-layer filmSi substrate
ITO
FilmFilm Thickness [nm] Refractive index
Ave. Std. deviation Ave. Std. deviation
ITO 33.30 0.0219 2.015 0.002
Remarks: Data from 30 times continuous measurement
Target film thickness: 30nm
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828486889092949698100102
0
5
10
15
20
25
530 580 630 680 730
ΔΨ
Wave length [nm]
Exp_PsiFit_PsiExp_DeltaFit_Delta
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SiN SiO a-Si【1】 22.9 243.8 49.1【2】 21.1 243.8 49.2【3】 21.9 242.9 49.2【4】 22.5 243.3 49.2【5】 22.3 242.2 49.2【6】 22.4 244.1 49.2【7】 22.8 243.7 49.1
Film Thick[nm]Third Layer
a-Si 48
SecondLayer
SiO2 200
Measured Layer
3-Layer FPD FilmsMeasurement
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【7】 22.8 243.7 49.1【8】 22.6 244.3 49.2【9】 21.8 242.9 49.2【10】 22.7 244.2 49.2
Average 22.3 243.5 49.2Std.Dev. 0.55 0.66 0.03
FirstLayer
Si3N4 20
Glass BK7 0.7mm
Wavelength Range : 530~750[nm]Spot Size : φ1.0[mm]Angle of Incidence : 70.00[°]Sampling Time : 20[ms]Measured 10 times at the same location
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Measurement Data (Comparison between ULVAC and others)
Comparison of 8 kinds of TiO2 film with different deposition condition.
Sample A B C D E F G H
UNECS 145.8nm 148.0nm 149.0nm 172.1nm 567.9nm 1155.9nm 1729.9nm 179.3nm
J.A. Woollam 145.1nm 147.5nm 147.9nm 171.1nm 569.4nm 1157.4nm 1728.0nm 180.9nm
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Woollam
Difference 0.5% 0.3% 0.7% 0.6% -0.3% -0.1% 0.1% -0.9%
Correlation is less than 1% for all sample A~H.
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You can see film thickness distribution with 2D color map.X-Y mode R-θ mode
Auto-Mapping function
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Ex. In the case of 106 points SiO2 film on Φ300mm Si substrate measurement by R-θ mode. 120sec (incl. moving time) 1/5 the competitor model
Hi speed measurement and auto-mapping function reduces test time
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■HfO2 (Ultra Thin Film)
Materials
Top Layer HfO2
Mid-Layer SiO2
Substrate Si Wafer
【Model】
【Results】
Measurement Results for ALD Thin Film
Sample Thickness _Max(nm) Thickness _Min(nm) Th ic kness_Ave rage (nm) Uniformity(%) Th ic kness@Cen te r(nm)
2nm HfO2/Native SiO2/Si 2.56 2.37 2.45 3.9% 2.46
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The correlation between the thickness measurement results of UNECS and these of TEM are perfect.
HfO2 5nm Thickness Color Map(44Points) TEM Measurement Results
2.5nm
6.0nm
2nm HfO2/Native SiO2/Si 2.56 2.37 2.45 3.9% 2.46
5nm HfO2/Native SiO2/Si 6.12 5.63 5.83 4.2% 5.85
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UNECS Φ50μm Micro-spot for MEMS Application
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【Sample】 Line Width 100µm X 5 【Measurement Area】 1mm×1mm Square Area【Measurement Points】 10,000
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Industry Measurement Object
Semiconductor
High-k(SiO2, Si3N4, SiNx, SiON, HfO2, Ta2O5...)Low-k(SiOC, SiOF...)Lithographic(AR, BARC, SiOxNy, Resists, Mask...)Semiconductor epitaxial(Poly-Si, a-Si, SOI, SiGe, OPO, SiC, GaN...)Ultrathin metal film(AL, Cu, Cr, No, W, Pt, TiN, TaN, AlCu...)
TFT ITO, SiNx, a-Si, Resists, SiOx, Polymide...
Applications
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Display
TFT(ITO, SiNx, a-Si, Resists, SiOx, Polymide...)CF(RGB, Polymide, ITO, CrO2...)OLED(AlQ3, CuPc, Organic Layers...)PDP(Mgo, ITO, AL2O3...)
Solar cells Thin-film(TCO, a-Si, μc-Si), CIGS
OpticsHi/Lo Stacks, Antireflection coating, Protective film, Decorative coating
Storage AL2O3, Ta2O5, DLC, MO materials, AlN
Communication SiOx, Al2O3, Ta2O5, TiO2
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■■ Standard system configurationUNECS bodyController (only UNECS-3000A)PC and data analysis software
■■OptionCalibration standard(100nm, SiO2 / Si)
USB connection×2
Easy Set Up
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+
Connect UNECS to PC with USB cable.
←UNECS-3000A
UNECS-1500M→
USB connection×2