Elettronica e Controllo degli Attuatori SMA

29
Elettronica e Controllo degli Attuatori SMA Adriano Basile STMicroelectronics, System LAB

Transcript of Elettronica e Controllo degli Attuatori SMA

Page 1: Elettronica e Controllo degli Attuatori SMA

Elettronica e Controllo degli

Attuatori SMA

Adriano Basile

STMicroelectronics, System LAB

Page 2: Elettronica e Controllo degli Attuatori SMA

Content 2

STMicroelectronics: Who we are

Shape Memory Alloy

Brief Mechanical Considerations

SMA Driving Topology

Experimental Results

Page 3: Elettronica e Controllo degli Attuatori SMA

• A global semiconductor leader

• The largest European semiconductor company

• 2012 revenues of $8.49B(1)

• Approx. 48,000 employees worldwide(1)

• Approx. 11,500(1) people working in R&D

• 12 manufacturing sites

• Listed on New York Stock Exchange, Euronext Paris

and Borsa Italiana, Milano

Who we are 3

(1) Including ST-Ericsson

Page 4: Elettronica e Controllo degli Attuatori SMA

Partners with our Customers worldwide 4

79 sales offices

in 35 countries

Page 5: Elettronica e Controllo degli Attuatori SMA

An unwavering Commitment to R&D 5

(1) Including ST-Ericsson

Advanced research and development centers around the globe

16,000 patents; ~9,000 patent families; 515 new filings (in 2012)

~ 11,500(1) people working in R&D and product design

Page 6: Elettronica e Controllo degli Attuatori SMA

Digital

Convergence

Group

(DCG)

Imaging,

BiCMOS,

ASIC & Silicon

Photonics

(IBP)

Automotive

Product

Group

(APG)

Analog, MEMS

& Sensors

(AMS)

Microcontrollers,

Memory &

Secure MCU

(MMS)

Embedded Processing Solutions

(EPS)

Industrial &

Power Discrete

Group (IPD)

Product Segments 6

Sense & Power and Automotive

Products (SP&A)

Wireless

(WPS)*

* former ST-Ericsson legacy products

Page 7: Elettronica e Controllo degli Attuatori SMA

Where you find us 7

Our automotive products

are making driving safer,

greener and more

entertaining

Our smart power products

are making more of our energy resources

Our MEMS & Sensors

are augmenting

the consumer experience

Our Microcontrollers

are everywhere

making everything smarter

and more secure

Our digital consumer products

are powering the augmented

digital lifestyle

Page 8: Elettronica e Controllo degli Attuatori SMA

Content 8

STMicroelectronics: Who we are

Shape Memory Alloy

Brief Mechanical Considerations

SMA Driving Topology

Experimental Results

Page 9: Elettronica e Controllo degli Attuatori SMA

Shape Memory Alloy (1/2)

• Shape memory alloys (SMA) form group of

metals that recovers particular shape when

heated above their transformation temperatures.

• SMA deforms easily under stress, if such alloys

are plastically deformed at one temperature, they

will completely recover their original shape on

being raised to a higher temperature.

• The shape memory alloys have two stable

phases

• the high–temperature phase, called austenite

• the low–temperature phase, called martensite

• Shape memory alloys are also used in a wide

range of medical and dental applications (healing

broken bones, misaligned teeth . . . )

9

Solid-to-solid state transformation

9

Page 10: Elettronica e Controllo degli Attuatori SMA

Shape Memory Alloy (2/2) 10

Diametro

[μm]

Forza

massima [N]

Contrazione

Massima

Forza

suggerita

[N]

Contrazione

suggerita

25 0,3 5% 0,1 3,5%

50 1,2 5% 0,3 3,5%

76 2,7 5% 0,8 3,5%

100 4,7 5% 1,3 3,5%

150 6,2 5% 2,7 3,5%

200 19 5% 5 3,5%

300 42 5% 12 3,5%

400 75 5% 21 3,5%

500 118 5% 33 3,5%

10

Page 11: Elettronica e Controllo degli Attuatori SMA

Content 11

STMicroelectronics: Who we are

Shape Memory Alloy

Brief Mechanical Considerations

SMA Driving Topology

Experimental Results

Page 12: Elettronica e Controllo degli Attuatori SMA

Advantages for Linear Actuators 12

Traditional Approach SMA Approach

Pro:

• The movement is really linear

• The system is silent

• The SMA wire does not occupy space

Con:

• One direction with one wire (a counter force is needed)

Page 13: Elettronica e Controllo degli Attuatori SMA

Further Mechanical Considerations 13

Spring

as counterforce (no control)

Second Wire

as counterforce (fully controlled)

The Electronic has to satisfy both the approaches and…

Page 14: Elettronica e Controllo degli Attuatori SMA

Content 14

STMicroelectronics: Who we are

Shape Memory Alloy

Brief Mechanical Considerations

SMA Driving Topology

Experimental Results

Page 15: Elettronica e Controllo degli Attuatori SMA

SMA Control Drv Topology 15

Diametro

[μm]

Forza

massima [N]

Contrazione

Massima

Forza

suggerita

[N]

Contrazione

suggerita

25 0,3 5% 0,1 3,5%

50 1,2 5% 0,3 3,5%

76 2,7 5% 0,8 3,5%

100 4,7 5% 1,3 3,5%

150 6,2 5% 2,7 3,5%

200 19 5% 5 3,5%

300 42 5% 12 3,5%

400 75 5% 21 3,5%

500 118 5% 33 3,5%

High Side Driving

Low Side Driving

Current

Generator

VDD

Shape Memory Alloy

wire

Current

Sink

VDD

Shape Memory Alloy

wire

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SMA Control Drv High Side Topology 16

• MCU schedules and controls the main process routines:

• External Commands and Communication;

• SMA Actuators Current generators control;

• SMA data acquisition and elaboration;

• Offset management.

P-MOS Driver

Vdd

S/H Offset MCU

+

– PGA

V_SMA

Shape

Memory

Alloy

wire

EXT

INPUT

DAC

ADC

Driver

R_sense

Page 17: Elettronica e Controllo degli Attuatori SMA

SMA Control Drv Low Side Topology 17

• MCU schedules and controls the main process routines:

• External Commands and Communication;

• SMA Actuators Current Sink control;

• SMA data acquisition and elaboration;

• Offset management.

N-MOS Driver

Vdd

S/H Offset MCU

+

– PGA

V_SMA

Shape

Memory

Alloy

wire

EXT

INPUT

DAC

ADC R_sense

Driver

Page 18: Elettronica e Controllo degli Attuatori SMA

Spec Example 18

Diametro

[μm]

Forza

massima [N]

Contrazione

Massima

Forza

suggerita

[N]

Contrazione

suggerita

76 2,7 5% 0,8 3,5%

P-MOS Driver

Vdd

S/H Offset MCU

+

– PGA

V_SMA

Shape

Memory

Alloy

wire

EXT

INPUT

DAC

ADC

Driver

R_sense

SMA Driving Waveform

• Current generator supplies measuring pulses @40mA

• Measurement required (typical) is Δ1Ω

• Voltage read with 12bit ADC (ref @2.5V)

• Measurement has to be amplified by gain factor = 31

• 40mA * Δ1Ω = Δ40mV

• Δ40mV*31= Δ1.240V

• 2.5V / 4096 = 0.6mV

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Bill of Material from Spec 19

Application Specific Integrated

Circuit (ASIC)

Channel #1

Drive +

Conditioning

Stage

Channel #2

Drive +

Conditioning

Stage

Channel #4

Drive +

Conditioning

Stage

Channel #3

Drive +

Conditioning

Stage

USB

conn

Analog

Conn.

Reset

PB

Dig

ital

Co

nn

.

Analog Power

Supply 6.5V

Sens

Digital

Power

Supply 5V

MCU

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Control Waveforms • Each of the SMA wires is driven with a

control waveforms consisting of two

phases:

• Ph1: measuring phase 40mA

• Ph2: driving phase, PWM mode 90mA

• During Ph2 driving signal is modulated

by varying the duty cycle of timers

• The target is to have a maximum of 2mW

when doing the measurement to keep the

power delivered to the wire as low as

possible

• The total resistance variation depend on

the wire length (i.e. 14mm may reach 6Ω)

• Generally the requested measurement

accuracy is 1mΩ / 1Ω.

mWs

smAiRP 2

40

84033

2

2

Measuring

Phase

Driving Phase

Measuring

Amplitude

Measuring Phase (8μs) Driving Phase (32μs)

Ton

Driving

Amplitude= 90mA

40mA

Ph1 Ph2

f=25 kHz

20

Page 21: Elettronica e Controllo degli Attuatori SMA

Content 21

STMicroelectronics: Who we are

Shape Memory Alloy

Brief Mechanical Considerations

SMA Driving Topology

Experimental Results

Page 22: Elettronica e Controllo degli Attuatori SMA

Experimental Results 22

First step has been emulate SMA wires and SMA

based actuator with Matlab / Simulink

This has been obtained thanks to tri-lateral collaboration between

ST, SAES Getter and Scuola Superiore S. Anna of Pisa

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Experiments: Parameter Determination 23

• Only a single wire is powered thus

allowing the resistance to leave the

associated martensite (R0) value

and progress along the SMA

resistance curve. This test intends

only to follow only a part of the

resistance curve and not enter the

austenite region.

• Procedure description

• Channel 2 is brought to R0 position, i.e.

Channel 1 is powered with a fixed duty cycle

(≈17.3%) in order to straighten Channel 2 wire

• DAC for Channel 2 is set in order to output

~2V on the ADC.

• A 0.5Hz Saw tooth duty cycle (0% ÷ 10%)

waveform is fed on channel 2; measurement

pulse only on the other channels

RMAX

Time

R

es

ista

nc

e

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Experiments: Hysteresis Curves (1/3) 24

• Hysteresis curve Duty Cycle vs. Voltage is obtained

• The range of acquired voltage is [0:4095] ≡Δ2.5V

• With given amplification, considering Δ1Ω variation, the

range of output voltage is about 1.240V

• By performing consecutive acquisition with different DAC

values, the hysteresis curved is determined

• One wire is supplied with ramp waveform whose frequency

and max/min values are modified is several acquisitions

DC= DC_MIN

DC= DC_MAX Ch1

time

DC =DC_MAX DC =DC_MIN

T=1/25KHz

time

Temperature

Page 25: Elettronica e Controllo degli Attuatori SMA

Experiments: Hysteresis Curves (2/3) 25

• By increasing the frequency, the hysteresis curves results wider, time

is not enough for the wire to cool down

• opposite channel is power with opposite waveform in order to pull the hot wire

DC є [2:15]%, 1Hz

DC є [2:20]%, 1Hz

DC є [2:20]%, 2Hz

DC є [2:20]%, 4Hz

DC є [2:20]%, 8Hz

Duty Cycle

V R

Page 26: Elettronica e Controllo degli Attuatori SMA

Experiments: Hysteresis Curves (3/3) 26

• By modifying DAC value the whole hysteresis is exploited

Duty Cycle

V R

DC= DC_MIN

DC= DC_MAX Ch1

time

Ch2

time

V R

DAC DAC variation

Page 27: Elettronica e Controllo degli Attuatori SMA

Experiments: Signal Follower 27

• A sophisticated controller has been implemented in firmware, allowing

following results:

4 wires driven with ramp waveforms @20Hz, range [2000:3000]

Op

po

site

ch

an

ne

ls

Op

po

site

ch

an

ne

ls

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Experimental Results: live video 28

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Thank you!