Electronics Evaluation Scheme

7/27/2019 Electronics Evaluation Scheme

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Hp2\\C:\Users\hcl\Desktop\BTE_Old\electronics\electronics.doc1

STUDY AND EVALUATI ON SCHEME FORTHREE YEARS DI PLOMA COURSE I N

1. ELECTRONI CS ENGI NEERI NG2. ELECTRONI CS ENGI NEERI NG( Advance Mi cr oprocessor & I nter f ace)3. ELECTRONI CS ENGI NEERI NG( Mi cr oel ect r oni cs)4. ELECTRONI CS ENGI NEERI NG( Modern Consumer El ect r oni cs Appl i ances)

(Eff ect i ve From )

( Common Wi t h I nst r ument ati on & Contr ol Engi neeri ng)

I Year

- - - - - - - - - - -- - - - - - - - - - - - -- - - - - - - - - - - - -- - - - - - - - - - - -- - - - - - - - - - - - -- - - - - - - - - - - -- - - - - - - - - - - - -- - - - - - - - - - - - -- - - - - - - - -Curr i cul um | | Scheme of Exami nat i on |

- - - - - - - - - - -- - - - - - - - - - - | | - - - - - - - - - - - - -- - - - - - - - - - - - -- - - - - - - - - - - -- - - - - - - - - - - - -- - |Peri ods Per Week | S U B J E C T | Theor y | Practi cal | Gra- |- - - - - - - - - - - - - - - - - - - - - - | | - - - - - - - - - - - - - - - - - - - - - - - | - - - - - - - - - - - - - - - - - - - - - - - - | nd |Le| Tut | Dr| Lab| Work| Tot| | Exami nat i on| Sess. | Tot al | Exami nati on| Sess. | Tot al | Tot - |c . | or i |aw| | Shop| al | | - - - - - - - - - - | Marks| Marks| - - - - - - - - - - - |Marks| Marks|a l |

|a l | | | | | | Dur . |Marks| | |Dur . | Marks| | | |- - | - - - | - - | - - - | - - - - | - - - | - - - - - - - - - - - - - -- - - - - - - - - - - -- - - - - | - - - - | - - - - - | - -- - - - | - - - - - | - - - - | - - -- - - | - - - - - | - - - - - - | - -- - |3 | - |- | 2 | - | 5 | 1. 1 Professi onal Communi cat i on | 2. 5 | 50 | 20 | 70 | 3 | 20 | 10 | 30 | 100|3 | 2/ 2| - | - | - | 4 | 1. 2 Appl i ed Mathemati cs-I | 2. 5 | 50 | 20 | 70 | - | - | - | - | 70|3 | 2/ 2| - | 2 | - | 6 | 1. 3 Appl i ed Physi cs | 2. 5 | 50 | 20 | 70 | 3 | 40 | 20 | 60 | 130|3 | - | - | - | - | 3 | 1. 4 Appl i ed Chemi stry | 2. 5 | 50 | 20 | 70 | - | - | - | - | 70|3 | - | - | - | - | 3 | 1. 5 Engi neer i ng Mechani cs | 2. 5 | 50 | 20 | 70 | - | - | - | - | 70|

| | | | | | and Mat er i al | | | | | | | | | |3 | - | - | 2 | - | 5 | 1. 6 El ectr i cal Engi neeri ng- I | 2. 5 | 50 | 20 | 70 | 3 | 60 | 30 | 90 | 160|3 | - | | 3 | - | 6 | 1. 7 El ectr oni c Component s And | 2. 5 | 50 | 20 | 70 | 3 | 80 | 40 | 120 | 190|

| | | | | | Devi ces. | | | | | | | | | |2 | - | 4 | - | - | 6 | 1. 8 Techni cal Drawi ng. | 3. 0 | 50 | 20 | 70 | - | - | - | - | 70|- | - | - | - | 6 | 6 | 1. 9 El ementary Workshop | - - | - - | - - | - - | 4 | 70 | 30 | 100 | 100|

| | | | | | Pr act i c e. | | | | | | | | | |

1 | - | - | 3 | - | 4 | 1. 10Computer Appl i cat i on For | -- | - - | - - | - - | 3 | 60 | 30 | 90 | 90|| | | | | | Engi neer i ng | | | | | | | | | || | | | | | | | | | | | | | | || | | | | | | | | | | | | | | || | | | | | | | | | | | | | | |

- - | - - - | - - | - - - | - - - - | - - - | - - - - - - - - - - - - - -- - - - - - - - - - - -- - - - - | - - - - | - - - - - | - -- - - - | - - - - - | - - - - | - - -- - - | - - - - - | - - - - - - | - -- - |21| 3 | 6 | 12 | 6 | 48 | | -- | 400 | 160 | 560 | - | 330 | 160 | 490 | 1050|- - | - - - | - - | - - - | - - - - | - - - | - - - - - - - - - - - - - -- - - - - - - - - - - -- - - - - | - - - - | - - - - - | - -- - - - | - - - - - | - - - - | - - -- - - | - - - - - | - - - - - - | - -- - |

Games/NCC/ Soci al and Cul tural Acti vi t y + Di sci pl i ne ( 20 + 30) | 50 || - - - - |

Aggregate | 1100|- - - - - -

NOTE: - ( 1) Each peri od wi l l be of 50 mi nut es durat i on.( 2) Each sessi on wi l l be of 32 weeks.(3) Ef f ecti ve t eachi ng wi l l be at l east 25 weeks.(4) Remai ni ng peri ods wi l l be uti l i sed for r evi si on etc.


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1. ELECTRONI CS ENGI NEERI NG2. ELECTRONI CS ENGI NEERI NG( Advance Mi cr oprocessor & I nter f ace)

3. ELECTRONI CS ENGI NEERI NG( Mi cr oel ect r oni cs)4. ELECTRONI CS ENGI NEERI NG( Modern Consumer El ect r oni cs Appl i ances)(Eff ect i ve From )

I I Year

- - - - - - - - - - -- - - - - - - - - - - - -- - - - - - - - - - - - -- - - - - - - - - - - -- - - - - - - - - - - - -- - - - - - - - - - - -- - - - - - - - - - - - -- - - - - - - - - - - - -- - - - - - - - -Curr i cul um | | Scheme of Exami nat i on |

- - - - - - - - - - -- - - - - - - - - - - | | - - - - - - - - - - - - -- - - - - - - - - - - - -- - - - - - - - - - - -- - - - - - - - - - - - -- - |Peri ods Per Week | S U B J E C T | Theor y | Practi cal | Gra- |- - - - - - - - - - - - - - - - - - - - - - | | - - - - - - - - - - - - - - - - - - - - - - - | - - - - - - - - - - - - - - - - - - - - - - - - | nd |Le| Tut | Dr| Lab| Work| Tot| | Exami nat i on| Sess. | Tot al | Exami nati on| Sess. | Tot al | Tot - |c . | or i |aw| | Shop| al | | - - - - - - - - - - | Marks| Marks| - - - - - - - - - - - |Marks| Marks|a l |

|a l | | | | | | Dur . |Marks| | |Dur . | Marks| | | |- - | - - - | - - | - - - | - - - - | - - - | - - - - - - - - - - - - - -- - - - - - - - - - - -- - - - - | - - - - | - - - - - | - -- - - - | - - - - - | - - - - | - - -- - - | - - - - - | - - - - - - | - -- - |3 | 2/ 2| - | - | - | 4 | 2. 1 Appl i ed Mathemati cs-I I | 2. 5 | 50 | 20 | 70 | -- | - - | - - | - - | 70|3 | - | -| 2 | - | 5 | 2. 2 El ectr i cal Engi neeri ng- I I | 2. 5 | 50 | 20 | 70 | 3 | 40 | 20 | 60 | 130|3 | - | -| 2 | - | 5 | 2. 3 I ndustr i al El ectr oni cs & | 2. 5 | 50 | 20 | 70 | 3 | 40 | 20 | 60 | 130|

| | | | | | Tr ans ducer s . | | | | | | | | | |2 | 2/2| -| 2 | - | 5 | 2. 4 Networks, Fi l t ers & Transmi - | 2. 5 | 50 | 20 | 70 | 3 | 40 | 20 | 60 | 130|

| | | | | | ss i on Li nes . | | | | | | | | | |3 | - | -| 2 | - | 5 | 2. 5 El ectr oni c Devi ces And | 2. 5 | 50 | 20 | 70 | 3 | 40 | 20 | 60 | 130|

| | | | | | Ci r cui t s . | | | | | | | | | |3 | - | - | 2 | - | 5 | 2. 6 Pri nci pl es of Communi cati on| 2. 5 | 50 | 20 | 70 | 3 | 40 | 20 | 60 | 130|

| | | | | | Engi neer i ng. | | | | | | | | | |3 | - | - | 3 | - | 6 | 2. 7 Pri nci pl es of Di gi tal | 2. 5 | 50 | 20 | 70 | 3 | 40 | 20 | 60 | 130|

| | | | | | El ect r oni cs | | | | | | | | | |- | - | - | - | 6 | 6 | 2. 8 El ectroni cs Workshop. | - - | - - | - - | - - | 4 | 100 | 40 | 140 | 140|3 | 1 | -| 3 | - | 7 | 2. 9 Programmi ng I n C & C++ | 2. 5 | 50 | 20 | 70 | 3 | 60 | 30 | 90 | 160|- - | - - - | - - | - - - | - - - - | - - - | - - - - - - - - - - - - - -- - - - - - - - - - - -- - - - - | - - - - | - - - - - | - -- - - - | - - - - - | - - - - | - - -- - - | - - - - - | - - - - - - | - -- - |23| 3 | - | 16 | 6 | 48 | | -- | 400 | 160 | 560 | -- | 400 | 190 | 590 | 1150|- - | - - - | - - | - - - | - - - - | - - - | - - - - - - - - - - - - - -- - - - - - - - - - - -- - - - - | - - - - | - - - - - | - -- - - - | - - - - - | - - - - | - - -- - - | - - - - - | - - - - - - | - -- - |

Games/NCC/ Soci al and Cul tural Acti vi ty + Di sci pl i ne ( 20 + 30) | 50|| - - - - |

Aggregate | 1200|- - - - - -

NOTE: - ( 1) Each peri od wi l l be of 50 mi nut es durat i on.( 2) Each sessi on wi l l be of 32 weeks.(3) Ef f ecti ve t eachi ng wi l l be at l east 25 weeks.(4) Remai ni ng peri ods wi l l be uti l i sed for r evi si on etc.( 5) 4 weeks str uctured and supervi sed, branch speci f i c, t ask ori ent ed

i ndustr i al / f i el d exposure to be organi sed dur i ng summer vacati on.Student wi l l submi t a r eport . There wi l l be 60 marks f or t hi s exposure.These marks wi l l be awarded by proj ect exami ner i n t he f i nal year.( Exami nat i on marks : 40, Sess. marks : 20 ) .

( 6) Fi el d vi si t and ext ensi on l ectures are to be organi sed and managedwel l i n advance at i nsti tute l evel as per need.


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1. ELECTRONI CS ENGI NEERI NG2. ELECTRONI CS ENGI NEERI NG( Advance Mi cr oprocessor & I nter f ace)

3. ELECTRONI CS ENGI NEERI NG( Mi cr oel ect r oni cs)4. ELECTRONI CS ENGI NEERI NG( Modern Consumer El ect r oni cs Appl i ances)(Eff ect i ve From )

FI NAL Year- - - - - - - - - - -- - - - - - - - - - - - -- - - - - - - - - - - - -- - - - - - - - - - - -- - - - - - - - - - - - -- - - - - - - - - - - -- - - - - - - - - - - - -- - - - - - - - - - - - -- - - - - - - - -

Curr i cul um | | Scheme of Exami nat i on |- - - - - - - - - - -- - - - - - - - - - - | | - - - - - - - - - - - - -- - - - - - - - - - - - -- - - - - - - - - - - -- - - - - - - - - - - - -- - |Peri ods Per Week | S U B J E C T | Theor y | Practi cal | Gra- |- - - - - - - - - - - - - - - - - - - - - - | | - - - - - - - - - - - - - - - - - - - - - - - | - - - - - - - - - - - - - - - - - - - - - - - - | nd |Le| Tut | Dr| Lab| Work| Tot| | Exami nat i on| Sess. | Tot al | Exami nati on| Sess. | Tot al | Tot - |c . | or i |aw| | Shop| al | | - - - - - - - - - - | Marks| Marks| - - - - - - - - - - - |Marks| Marks|a l |

|a l | | | | | | Dur . |Marks| | |Dur . | Marks| | | |- - | - - - | - - | - - - | - - - - | - - - | - - - - - - - - - - - - - -- - - - - - - - - - - -- - - - - | - - - - | - - - - - | - -- - - - | - - - - - | - - - - | - - -- - - | - - - - - | - - - - - - | - -- - |2 | 2/ 2| - | - | - | 3 | 3. 1 I ndustr i al Management and | 2. 5 | 50 | 20 | 70 | -- | - - | -- | - - | 70 |

| | | | | | Entr epreneurshi p Devel opment| | | | | | | | | |2 | - | - | - | - | 2 | 3. 2 Envi ronmenta l Educat i on(* ) | 2. 5 | 50 | - - | - - | - - | - - | - - | - - | - - |

| | | | | | And Di saster Management | | | | | | | | | |4 | - | - | 3 | - | 7 | 3. 3 Communi cati on Syst ems. | 2. 5 | 50 | 20 | 70 | 3 | 60 | 30 | 90 | 160 |3 | - | - | 3 | - | 6 | 3. 4 El ectr oni c I nstr uments | 2. 5 | 50 | 20 | 70 | 3 | 60 | 30 | 90 | 160 |

| | | | | | And Measurement. | | | | | | | | | |3 | 2/2| - | 3 | - | 7 | 3. 5 Audi o And Vi deo Syst em | 2. 5 | 50 | 20 | 70 | 3 | 60 | 30 | 90 | 160 |3 | 2/ 2| - | 3 | - | 7 | 3. 6 Tel evi si on Engi neeri ng | 2. 5 | 50 | 20 | 70 | 3 | 60 | 30 | 90 | 160 |3 | 2/2| - | 4 | - | 8 | 3. 7 Mi croprocessor And | 2. 5 | 50 | 20 | 70 | 3 | 60 | 30 | 90 | 160 |

| | | | | | Appl i cat i on. | | | | | | | | | |- | - | | 4 | - | 4 | 3 .8 Pr oj ec t - i . Pr obl em | - - | - - | - - | - - | 3 | 90 | 40 | 130| | |

| | | | | | i i . Fi el d Exposur e| - - | - - | - - | - - | - | 40 | 20 | 60| | 1 90 |- - | - - - | - - | - - - | - - - - | - - - | - - - - - - - - - - - - - -- - - - - - - - - - - -- - - - - | - - - - | - - - - - | - -- - - - | - - - - - | - - - - | - - -- - - | - - - - - | - - - - - - | - -- - |20| 4 | - |20 | - | 44 | | -- | 300 | 120 | 420 | -- | 415 | 205 | 620 | 1060|- - | - - - | - - | - - - | - - - - | - - - | - - - - - - - - - - - - - -- - - - - - - - - - - -- - - - - | - - - - | - - - - - | - -- - - - | - - - - - | - - - - | - - -- - - | - - - - - | - - - - - - | - -- - |

| | | | | | 3. 9 ELECTIVE (Any One) | | | | | | | | | || | | | | | Onl y For El ec t roni cs Engg. | | | | | | | | | |

3 | 1 | - | - | - | 4 | i . Modern Communi cati on | 2. 5 | 50 | 20 | 70 | - | - - | - - | - - | 70 || | | | | | Sys tem | | | | | | | | | |

3 | 1 | | - | - | 4 | i i . Bi o Medi cal El ec t roni cs | 2. 5 | 50 | 20 | 70 | - | - - | - - | - - | 70 |3 | 1 | - | - | - | 4 | i i i . Mi crowave & Radar Engg. |2.5 | 50 | 20 | 70 | - | - - | - - | - - | 70 |1 | - | - | 3 | - | 4 | i v . El ectroni cs Equi pment | - - | - - | - - | - - | 3 | 50 | 20 | 70 | 70 |

| | | | | | Tes ti ng | | | | | | | | | || | | | | | Onl y For El ec t roni cs Engi neer i n| | | | | | | | | || | | | | | Spl . Advance Mi croprocessor | | | | | | | | | || | | | | | and I n t er f ace | | | | | | | | | |

3 | 1 | - | - | - | 4 | i . Advance Mi croprocessor | 2. 5 | 50 | 20 | 70 | - | - - | - - | - - | 70 || | | | | | and I nt er f ace | | | | | | | | | || | | | | | Onl y For El ec t roni cs Engg. | | | | | | | | | || | | | | | Spl . I n Mi cr oel ect r oni cs | | | | | | | | | |

3 | 1 | - | - | - | 4 | i . Mi c roel ec t roni cs | 2. 5 | 50 | 20 | 70 | - | - - | - - | - - | 70 |

| | | | | | Onl y For El ec t roni cs Engg. | | | | | | | | | || | | | | | Spl . Modern Consumer | | | | | | | | | || | | | | | E le ct r oni c s Appl i ances | | | | | | | | | |

1 | - | - | 3 | - | 4 | i . Modern Consumer El ectro-| -- | - - | - - | - - | 3 | 50 | 20 | 70 | 70 || | | | | | ni c s Appl i ances | | | | | | | | | |

- - | - - - | - - | - - - | - - - - | - - - | - - - - - - - - - - - - - -- - - - - - - - - - - -- - - - - | - - - - | - - - - - | - -- - - - | - - - - - | - - - - | - - -- - - | - - - - - | - - - - - - | - -- - |- | - | - | - | - | - - | | - - | - - | - - | - - | - - | - - | - - | - - | 1130|- - | - - - | - - | - - - | - - - - | - - - | - - - - - - - - - - - - - -- - - - - - - - - - - -- - - - - | - - - - | - - - - - | - -- - - - | - - - - - | - - - - | - - -- - - | - - - - - | - - - - - - -- - - - |

Games/NCC/ Soci al and Cul tural Acti vi t y + Di sci pl i ne ( 20 + 30) | 50|| - - - - || 1180|| - - - - |

NOTE: - ( 1) Each peri od wi l l be of 50 mi nut es dur ati on. 30% Carr y Over of I Year | 330|( 2) Each sessi on wi l l be of 32 weeks. 70% Carr y Over of I I Year | 840|(3) Eff ecti ve t eachi ng wi l l be at l east 25 weeks. 100%of Fi nal Year | 1180|(4) Remai ni ng per i ods wi l l be ut i l i sed f or revi si on etc. | - -- - |(5) Fi el d vi si t and ext ensi on l ect ures are t o be | 2350|

organi sed and managed wel l i n advance at i nsti t ute l evel as per need.( 6) ( *) I t i s compul sory t o appear & t o pass i n exami nat i on, But marks wi l l

not be i ncl uded f or di vi si on and percent age of obtai ned marks.


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C O N T E N T S_________________________________________________________________Sl . No. Par t i cul ar s Page No._________________________________________________________________

I . Study and Eval uat i on SchemeI I . Cont entI I . Mai n Feat ur es of t he Cur r i cul um 1I I I . Li s t of Expert s 2 - 6

DETAI LED COURSE CONTENTS1. I Year

1. 1 Prof essi onal Communi cat i on 7 - 101. 2 Appl i ed Mathemat i cs- I 11 - 131. 3 Appl i ed Physi cs 14 - 19

1. 4 Appl i ed Chemi st r y 20 - 241. 5 Engi neer i ng Mechani cs & Mater i al s 25 - 261. 6 El ect r i cal Engi neer i ng- I 27 - 311. 7 El ect r oni c Components And 32 - 38

Devi ces.1. 8 Techni cal Dr awi ng. 39 - 431. 9 El ement ar y Wor kshop 44 - 47

Pract i ce.1. 10 Comput er Appl i cat i on For Engi neer i ng 48 - 49

2. I I Year

2. 1 Appl i ed Mathemat i cs- I I 50 - 522. 2 El ectr i cal Engi neer i ng- I I 53 - 562. 3 I ndust r i al El ect r oni cs & 57 - 60

Tr ansducer s.2. 4 Net work Fi l t ers & Transmi - 61 - 65

ssi on Li nes.2. 5 El ect r oni c Devi ces And 66 - 72

Ci rcui t s .2. 6 Pri nci pl es of Communi cat i on Engi neer i ng. 73 - 762. 7 Pr i nci pl es of Di gi t al 77 - 83

El ectr oni cs2. 8 El ect r oni cs Workshop. 84 - 892. 9 Pr ogr ammi ng I n C & C++ 90 - 91

3. I I I Year

3. 1 I ndust r i al Management and 92 - 94Ent r epr eneur shi p Devel opment

3. 2 Envi r onment al Educat i on & Di sast er Management 95 - 973. 3 Communi cat i on Syst em 98 - 1003. 4 El ect r oni c I nst r ument s 101- 105

And Measurement .3. 5 Audi o And Vi deo Syst em 106- 1093. 6 Tel evi si on Engi neer i ng 110- 1153. 7 Mi cr opr ocessor And 116- 119


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Appl i cat i on.3. 8 Pr oj ect - i . Pr obl em 120- 123

i i . Fi el d Exposur e3. 8 ELECTI VE ( Any One)

i . Modern Communi cat i on Syst em 124- 126i i . Advance Mi cr opr oceesor & I nt er f ace 127i i i . Bi o Medi cal El ectr oni cs 128- 129i v. Mi croel ect r oni cs 130- 132v. Mi cr owave & Radar Engg. 133- 135

vi . El ect r oni c Equi pment Test i ng 136- 137vi i . Modern Consumer El ect r oni cs Appl i ances 138- 141

4. St af f St r uct ur e 1425. Space Requi r ement 143- 1446. Li st of Equi pment s 145- 1807. Lear ni ng Resour ces Equi pment 1818. Annexur e - 1 : Quest i onai r e 182- 184

Annexur e - 2 : Fi el d Exposur e Schedul e 185- 186


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Hp2\\C:\Users\hcl\Desktop\BTE_Old\electronics\electronics.doc 1

MAI N FEATURES OF THE CURRI CULUM

1. Ti t l e of t he Cour se : Di pl oma I n El ect r oni csEngi neer i ng

2. Dur at i on of t he Cour se : Thr ee Years

3. Type of t he Cour se : Ful l Ti me I nst i t ut i onal

4. Pat t er n of t he Cour se : Annual Syst em

5. I nt ake : 30

6. Ent r y Qual i f i cat i on : Hi gh School 10+ wi t h Sci enceand Mat hemat i cs ( Not El ement ary

7. Admi ssi on Cr i t er i a : St at e J oi nt Ent r anceExami nat i on


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I I I . LI ST OF EXPERTS1. Dr . A. S. Darbar i Manager , Darbar i Dhuman Ganj ,

I ndust r i es Al l ahabad.

2. Pr of . R. N. Bi swas Pr of & Head I . I . T. ,El ect r i cal Engg. Dept t . Kanpur

3. Prof . K. K. Bhut ani Prof & Head, Comput er Mui r Col l ege CampusCent r e Al l ahabad Uni ver si t y

Al l ahabad.

4. Pr of . K. K. Tr i pat hi Pr of . & Head, El ectr oni cs H. B. T. I . , KanpurEngi neer i ng Dept t .

5. Pr of . V. K. J ai n Pr of . & Head, Comput er H. B. T. I . , KanpurSci ence & Engg. Dept t .

6. Shr i R. C. Yadav Sr . Engi neer, Comput er M. C. C. , Al l ahabadCent r e Uni ver si t y,

Al l ahabad.

7. Shr i R. S. Ver ma Engi neer , Comput er Upt r on I ndi a Lt d. ,Di vi si on Lucknow.

8. Shr i Prasant Kumar Ar ya H. C. L. Lt d. , Lucknow

9. Shr i Ar unara Ray AMALCO ( H. C. L. Lt d. , ) Lucknow

10. Shr i Bal Gopal Asstt . Pr of . El ectr oni cs H. B. T. I . , KanpurEngi neer i ng Dept t .

11. Shr i Gi r i sh Chandr a Lect ur er , J . K I nst i t ut e Al l ahabad Uni ver si t yof Appl i ed Physi cs Al l ahabad.

12. Shr i C. K. Dwi vedi Lectur er , J . K I nst i t ut e Al l ahabad Uni ver si t yof Appl i ed Physi cs Al l ahabad.

13. Shr i Om Pr akash Head, I nst r ument at i on I . E. R. T. , Al l ahabad& Cont r ol Engi neer i ng

14. Shr i P. K. Sr i vast ava Head, El ectr oni cs I . E. R. T. , Al l ahabadEngi neer i ng Dept t .

15. Pr of . P. K. Si ngh Head, Comput er I . E. R. T. , Al l ahabadSci ence

16. Shr i G. S. Rai Head, El ect r oni cs Engg. Govt . Pol ytechni c,Pi l i bhi t

17. Shr i S. C. Gupt a Asst t . Di r ect or Di r ect or e of Techni calEducat i on, Kanpur .

18. Shr i S. C. Tewar i Lect ur er , El ect r oni cs Govt . Pol ytechni c,Fatehpur


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19. Shr i Akhi l esh Ver ma Lect ur er , El ect r oni cs Govt. Pol ytechni c,Narendra Nagar ,Tehr i Gar hwal

The cur r i cul um as devel oped, was r evi ewed by t he f ol l owi ngcommi t t ee ( const i t ut ed as per Govt . Let t er No. 1471/ 92- Pra. Shi . - 3- 1992Lucknow Dat ed- 8/ 12 May 1992) .

1. Pr of . R. N. Bi swas Pr of & Head I . I . T. , KanpurEl ectr i cal Engg.Dept t .

2. Shr i A. Shaf i Of f i cer I nchar ge El ect r oni cs Test &Devel opment Cent r e,Upt r on Est at e, Panki ,Kanpur .

3. Shr i B. K. Mi sr a Manager ( R&D) I ndi an Tel ephone

( Repr esent at i ve G. M. ) I ndust r i es, MankapurGonda

4. Shr i S. C. Kaushal D. E. Tel ecomm. Mi cr owave St at i on,Sar vodaya Nagar ,Kanpur

5. Shr i S. S. Roy Dy. Manager ( R&D) I ndi an Tel ephone( Repr esent at i ve I ndust r i es, Rai bar el iC. I . I . )

6. Shr i S. C. Gupt a Asst t . Di r ect or Di r ect or at e of Techni caEducat i on, U. P. Kanpur

7. Smt . Sushma Gaur Asst t . Prof essor Boar d of Techni calEducat i on, U. P. , Lko.

8. Shr i P. C. Di kshi t Di r ector I nst i t ut e of Resear chDevel opment & Tr ai ni ng

* U. P. , Kanpur

The members of t he commi t t ee r ecommended i t s bei ng adopt ed af t era f ew ammendment s whi ch have been i ncorporat ed i n the cur r i cul um.


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LI ST OF EXPERTS

The names of exper t s whose upshots made possi bl e comi ng up oft hi s cur r i cul um ar e l i sted bel ow :

1. Shr i R. G. Gupt a 5. Shr i J . S. RaiDi r ect or ( Ret ed. ) H. O. D. El ect r oni csPol l i ce Wi r el ess Govt . Pol yt echni cMahanagar , Lucknow Kanpur

2. Dr . K. K. Tr i pat hi 6. Shr i S. K. Si nghPr of . & Head H. O. D. El ect r oni csDept t . of El ect r oni c Engg. F. G. Pol yt echni cH. B. T. I . , Kanpur Rai bar el i

3. Shr i Vi shal Saxena 7. Shr i S. C. Gupt aSeni or Engi neer H. O. D. El ect r oni csP. C. Mai nt enace cel l Govt. Pol ytechni cI . I . T. , Kanpur Unnao

4. Dr . R. Ti wari 8. Smt . Dayawant i PandeyCent r e Manager H. O. D. Comput er Engg.Comput er Cent er Govt. Gi r l s, Pol y.I . I . T. , Kanpur Lucknow

LI ST OF EXPERTS

On dat ed 30- 11- 04 & 27- 01- 05 t he f ol l owi ng exper t s whosecont r i but i on and suppor t i n t he r evi si on of t hi s cur r i cul umi s a mat t er of obl i gat i on t o I . R. D. T.

1. Pr of . Anj an Ghosh Dept t . of El ect r oni cs Engg.I . I . T. , Kanpur

2. Prof . Ut pal Das Dept t . of El ect r oni cs Engg.I . I . T. , Kanpur

3. Mr . Dharmendr a Si ngh Dept t . of El ect r oni cs Engg.Asst. Pr of essor I . I . T. , Roor kee

4. Mr s. Rachna Ast hana Dept t . of El ect r oni cs Engg.Asst. Pr of essor H. B. T. I . , Kanpur

5. Mr . G. P. Baghar i a Dept t . of El ect r oni cs Engg.Asst. Pr of essor H. B. T. I . , Kanpur

6. Mr s. Raj ani Bi sht Dept t . of El ect r oni cs Engg.Asst. Pr of essor H. B. T. I . , Kanpur

7. Mr . Mani sh Sahu B. S. N. L. , KanpurD. G. M. , Mi cr owave

8. Mr s. T. Gupt a I . E. T. , KanpurFacul t y


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9. Mr . S. N. Mat hur Door darshan, KanpurSt at i on Engi neer

10 Mr . S. K. Verma Govt . Pol y. , KanpurPr i nci pal

11. Mr . S. P. C. Lal Govt . Gi r l s Pol y. , Var anasiHead, El ect r oni cs Engg.

12. Mr . Sabi r Al i Govt . Pol y. , Mai npur iHead, El ect r oni cs Engg.

13. Mr . N. B. Sadh A. I . R. , Pr asar Bhar t i , KanpurA. S. E.

14. Ms. Anj ana Rani Upt r on I ndi a Lt d. , LucknowDy. Manager

15. Mr . A. G. P. Kuj ur A. M. Comput er s, I . T. I . , ManakapurGonda.

16. Mr . G. S. Rai D. T. E. , KanpurDy. Di r ect or

17. Mr . S. C. Gupt a D. T. E. , KanpurDy. Di r ect or

18. Dr . S. S. Pat t ani k N. I . T. T. I . , Chandi gar hHead, E & CE

19. Smt R. P. Al am I . R. D. T. , KanpurAsstt . Pr of essor


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FI RST YEAR DI PLOMA COURSE I N "ELECTRONI CS ENGI NEERI NG"

1. 1 PROFESSI ONAL COMMUNI CATI ON

[ Common t o Al l Engi neer i ng/ Non Engi neer i ng Cour ses]L T P3 - 2

Rat i onal e:

Communi cat i on f orms an i mpor t ant act i vi t y ofdi pl oma hol der . I t i s essent i al t hat he/ she shoul d be i n aposi t i on t o communi cat e i n wr i t i ng and or al l y wi t hsuper i or s, equal s and subordi nates. Thi s subj ect ai ms atpr ovi di ng worki ng knowl edge of l anguages l i ke Hi ndi andEngl i sh so as t o t r ai n t he st udent s i n t he ar t ofcommuni cat i on. I t i s suggest ed t hat maxi mum at t ent i on shoul dbe gi ven i n devel opi ng Communi cat i on abi l i t i es i n t hest udent s whi l e i mpart i ng i nst r uct i ons by gi vi ng maxi mumemphasi s on pr act i ce.

________________________________________________________________

Sr . No. Uni t s Cover age t i meL T P

________________________________________________________________

1. I nt r oduct i on t o communi cat i on methods 5 - -meani ng, channel s & medi a wr i t t en andver bal .

2. Devel opment of compr ehensi on of Engl i sh 20 - -& Hi ndi t hr ough study of t ext mater i al &l anguage exer ci ses.

3. Devel opment of expr essi on t hroughA. Let t er s( Engl i sh & Hi ndi ) 10 - -B. Repor t wr i t i ng ( Engl i sh) 10 - -Not e maki ng and mi nut es wr i t i ng

4. Composi t i on 10 - -

5. Gr ammer 20 - -- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -

75 - 50_______________________________________________________________

1. PART I : COMMUNI CATI ON I N ENGLI SH

1. 1 Concept of communi cat i on, i mport ance of ef f ect i ve

communi cat i on, t ypes of communucat i on, f ormal , i nf ormal ,ver bal and nonver bal , spoken and wr i t t en. Techni ques ofcommuni cat i on, Li st eni ng, r eadi ng, wr i t t i ng and speaki ng,Bar r i ers i n communi cat i on, Modern t ool s of communi cat i on-Fax, e- mai l , Tel ephone, t el egr am, et c.

1. 2 Devel opment of comprehensi on and knowl edge of Engl i sht hr ough t he st udy of t ext materi al and l anguage exer ci sesbased on t he pr escri bed t ext book of Engl i sh.


12/189


1. 3 Devel opment of expr essi on t hr ough:

1. 3. 1 Let t er s :

Ki nds of l et t ers : -Of f i ci al , demi - of f i cal , unof f i ci al , f or repl y or i n

r epl y, quot at i on, t ender and or der gi vi ng l et t er s.Appl i cat i on f or a j ob.

1. 3. 2 Report wr i t i ng and Note maki ng and mi nutes wr i t i ng.

1. 4 Gr ammer : Transf ormat i on of sent ences, Preposi t i on,Ar t i cl es, I di oms and Phr ases, One wor d subst i t ut i on,Abbr evi at i ons.

1. 5 Composi t i on on nar r at i ve, descri pt i ve, i magi nat i ve,ar gument at i ve, di scussi on and f act ual t opi cs.

2. PART I I : COMMUNI CATI ON I N HI NDI

2. 1 Devel opment of comprehensi on and knowl edge of Hi ndi usaget hr ough r api d r eadi ng and l anguage exerci ses based onpr escr i bed t ext mater i al devel oped by I RDT.

2. 2 Devel opment of expr essi on t hr ough ;

Let t er wr i t i ng i n Hi ndi :Ki nds of l et t er s : -Of f i ci al , demi - of f i cal , unof f i ci al , f or r epl y or i nr epl y, quot at i on, t ender and or der gi vi ng l et t er s,Appl i cat i on f or a j ob.

( 1) Paper shoul d be i n t wo par t s, par t I - Engl i sh and par t I IHi ndi .

COMMUNI CATI ON AND PRESENTATI ON PRACTI CES

1. A. Phonet i c t r anscr i pt i onB. St r ess and i nt onat i on :

( At l east 10 wor d f or wr i t t i ng and 10 wor d f or pronunci at i on)

2. ASSI GNMENT : ( Wr i t t en Communi cat i on)

Two ass i gnment of appr oxi mat el y 400 wor d each deci ded by t het eacher s.

SUGGESTED ASSI GNMENTS :

1. a pi ct ur e/ phot ogr aph2. an openi ng sentence or phr ase3. a newspaper / magzi ne cl i ppi ng or r eport4. f act ual wr i t t i ng whi ch shoul d be i nf or mati ve

or argument at i ve.

3. Or al Conver sati on:


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1. Shor t speeches/ decl amat i on : Bi d f ar ewel l , Fel i ci t at e

somebody, Cel ebr at e a publ i c event , Of f er condol ences2. Debate on cur r ent pr obl ems/ t opi cs3. MockI nt er vi ew : Pr epar at i on, Unf ol di ng of per sonal i t y and

Expr essi ng i deas ef f ect i vel y4. Gr oup di scussi on on cur r ent t opi cs/ pr obl ems5. Rol e Pl ay/ gener al conver sati on : Maki ng pol i t e enqui r i es at

Rai l way St at i on, Post Of f i ce, Banks and other Publ i c pl aces,Repl yi ng t o such enqui r i es, enqui r i ng about var i ous goodssol d i n t he mar ket and di scussi ng t hei r pr i ces. Compl ai ni ngabout ser vi ce at Hot el , restaur ant , Of f er i ng apol ogi es i nr epl y t o such compl ai nts, compl ai n t o a company about adef ect i ve pr oduct you have br ought , r epl y t o suchcompl ai nt s.

6. Pr esent at i on ski l l , Use of OHP and LCD.

4. Aur al :

Li st eni ng t o conver sati on/ t al k/ r eadi ng of shor t passage and

t hen wr i t t i ng down t he r el evant or mai n poi nt s i n t hespeci f i ed number of words and answer i ng t he gi ven quest i ons

The ass i gnments/ proj ct wor k ar e t o be eval uated by t hei nt er nal / exter nal exami ner . The di st r i but i on of 30 mar kse. g.

10 marks f or assi gnment ( Gi ven by subj ect t eacher assessi onal marks)

10 marks f or conver sat i on and vi va- voce10 mar ks f or phonet i c t r anscr i pt i on

STRUCTURE OF COMMUNI CATI ON TECHNI QUE PAPER

Di st r i but i on of Mar ks

Theor y Paper : 50 Mar ksSessi onal : 20 MarksPr at i ces : 30 Mar ks

Q1. Quest i on based on t he t opi cs pr escr i bed t ext mat er i al wi l lbe set t o t est t he candi dat es abi l i t y t o under st and t hecont ent , expl ai n words and phr ases, maki ng sent ence of gi venwords and abi l i t y to summar i se wi l l be i ncl uded. Al lquest i ons wi l l have t o be answered.

A. f r omEngl i sh Text Book 10 Marks

B. f r omHi ndi Text Book 5 Marks

Q2. Candi dat es wi l l be r equi r ed t o wr i t e one l et t er ( Engl i sh)and one l et t er i n ( Hi ndi ) f r om a choi ce of t wo -

A. Engl i sh Let t er s 5 Mar ksB. Hi ndi Let t er s 5 Mar ks

Q3. Report Wr i t t i ng on gi ven out l i nes 5 Marks


14/189


Q4. Ther e wi l l be a number of short answer quest i ons t o t est t hecandi dat es knowl edge of f unct i onal gr ammer, st r uctur e andusage of t he l anguage. Al l t he i t ems i n t hi s quest i on wi l lbe compul sor y. The grammar quest i ons has f our par t s -

( Tot al Par t : A For 5 Marks, B For 3 Marks, C For 3 Marks andD For 4 Marks)

A. Thi s part of t he quest i on has t o do wi t h t het r ansf ormat i on of sent ences. Engl i sh uses sever alpat t erns of sent ence f ormat i on and t he same meani ng canbe expr esed by sever al pat t er ns e. g. Act i ve t o Passi vevoi ce and vi ce ver sa, Di r ect t o I ndi r ect and vi cever sa, Ref r ami ng sent ences by changi ng part of speeche. g Noune t o Adj ect i ve, I nt er changi ng degr ee ofcompar i son.

I nt er changi ng Moods - Af f i r mat i ve t o Negati ve,Asser t i ve t o I nt er r ogat i ve or t o excl amator y

B. The second part usual l y r equi r es bl anks i n a sent encet o be f i l l ed i n wi t h a sui t abl e pr eposi t i on andar t i cl es.

C. The t hi r d part i s usual l y an exer ci se on t enses.

D. The f our t h part concer ns wi t h one word subst i t ut i on andabbr evat i on, uses of i di oms and Phr ases.

Q5. COMPOSI TI ON : ( About 300 Wor ds) ( 5 mar ks)

Candi dates wi l l be r equi r ed t o sel ect one composi t i on t opi cf r om a choi ce of f i ve. The choi ce wi l l nor mal l y i ncl udenarr at i ve descr i pt i ve, ar gument at i ve, di scussi on andf actual t opi cs. The mai n cet er i a by whi ch t he composi t i onwi l l be marked are as f ol l ows

A. t he qual i t y of t he l anguage empl oyed, t he r ange andappr opr i ateness of vocabul ary and sent ence st r uct ur e t hecorr ect ness of gr ammat i cal const r uct i on, punct uat i on andspel l i ng.

B. The degr ees t o whi ch candi dat e have been successf ul l y i norgani si ng both t he composi t i on as a whol e and t hei ndi vi dual par agr aphs.


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1. 2 APPLI ED MATHEMATI CS I

[ Common t o Al l Engi neer i ng Cour ses]

L T P3 2/ 2 -

Rat i onal e:

The st udy of mat hemat i cs i s an i mpor t ant r equi r ementf or t he under st andi ng and devel opment of any branch ofengi neer i ng. The pur pose of t eachi ng mathemat i cs t o di pl omaengi neeri ng st udent s i s t o i mpart t hem basi c knowl edgeof mathemat i cs whi ch i s needed f or f ul l under st andi ngand st udy of engi neer i ng subj ect s.

_________________________________________________________________S. N. Uni t s Cover age Ti me______________________________________________________L____T___P_1. Al gebr a- I 18 6 -

2. Tr i gonomet r y 7 2 -3. Coordi nat e Geomet r y 15 5 -4. Di f f er ent i al Cal cul us- I 15 5 -5. I nt egr al Cal cul us- I 20 7 -___________________________________________________________________

75 25 -___________________________________________________________________

DETAI LED CONTENTS:

1. ALGEBRA- I :

1. 1 Ser i es : AP and GP; Sum, nth t erm, Mean

1. 2 Bi nomi al t heor em f or posi t i ve, negat i ve and f r act i onal i ndex( wi t hout pr oof ) . Appl i cat i on of Bi nomi al t heor em.

1. 3 Deter mi nant s : El ement ary pr opert i es of det er mi nant of or der2 and 3, Mul t i pl i cat i on syst em of al gebr ai c equat i on,Consi st ency of equat i on, Cr ammer' s r ul e

1. 4 Vect or al gebr a : Dot and Cr oss pr oduct , Scal er and vect ort r i pl e pr oduct . Appl i cat i on t o wor k done, Moment of a f or ce,Pl ane geomet r y.

2. TRI GONOMETRY :

2. 1 Rel at i on bet ween si des and angl es of a t r i angl e : St atementof var i ous f ormul ae showi ng r el at i on shi p between si des andangl e of a t r i angl e.

2. 2 Compl ex number .

Compl ex number s, Repr esent at i on, Modul us and ampl i t udDemoi vre theor em, i t s appl i cat i on i n sol vi ng al gebr ai cequat i ons, Mod. f unct i on and i t s pr oper t i es. .


16/189


3. CO- ORDI NATE GEOMETRY :

3. 1 St andar d f or m of cur ves and t hei r si mpl e pr oper t i es -

Parabol a x2=4ay, y2=4ax,

El l i pse x2 y2- - + - - =1a2 b2

Hyper bol a x2 y2- - - + - - - =1a2 b2

Tangent and normal s

3. 2 St r ai ght l i nes, pl anes and spher es i n space -

Di st ance bet ween t wo poi nt s i n space, di r ect i on cr ossi ng and

di r ecti on r at i os, Fi ndi ng equat i on of a st r ai ght l i ne, andshor t est di st ance bet ween two l i nes

Under di f f erent condi t i ons equat i on of a pl ane l x+my+nz=c,r el at i on bet ween l i nes and pl anes, sphere x2 + y2 + z2 + 2gx+ 2f y + 2wz=d

4. DI FFERENTI AL CALCULUS - I :

4. 1 Functi ons, l i mi t s, cont i nui t y, - f uncti ons and t hei r gr aphs,r ange and domai n, el ement ary methods of f i ndi ng l i mi t s( r i ght and l ef t ) , el ement ar y t est f or cont i nui t y anddi f f erent i abi l i t y.

4. 2 Met hods of f i ndi ng der i vat i ve, - Funct i on of a f unct i on,Logari t i mi c di f f erent i at i on, Di f f erent i at i on of i mpl i ci tf unct i ons, Hi gher or der der i vat i ves, Lei bni t z t heor em.

4. 3 Speci al f unct i ons ( Exponent i al , Logar i t hmi c, Hyper bol i c,I nver se ci r cul ar and f unct i on) , Def i ni t i on, Gr aphs, r angeand Domai n and Der i vat i ons of each of t hese f unct i ons.

4. 4 Appl i cat i on - Fi ndi ng Tangant s, Normal , Poi nt s ofMaxi ma/ Mi ni ma, I ncr easi ng/ Decr easi ng f unct i ons, sket chi ng ofsome si mpl e cur ves ( wi t hout assumpt i ons, quest i on, not t o beasked i n t he exami nat i on) , Rat e, Measur e, vel oci t y,Accel er at i on, Er r or s and appr oxi mat i on.

5. I NTEGRAL CALCULUS - I :

5. 1 Met hods of I ndef i ni t e I nt egr at i on : - I nt egr at i on bysubsti t ut i on, Par t i al f r acti on and by par t s, I nt egr at i on ofspeci al f uncti on of 4. 3.

5. 2 Meani ng and pr oper t i es of def i ni t e i nt egr al s, Eval uat i on ofdef i ni t e i nt egral s .


17/189


5. 3 Appl i cat i on : Fi ndi ng areas bounded by si mpl e cur ves, Lengt hof si mpl e cur ves, Vol ume of sol i ds of r evol ut i on, cent r e ofmean of pl ane ar eas.

5. 4 Si mpsons and Tr apezoi dal Rul e : t hei r appl i cat i on i n si mpl ecases, Concept of er r or f or si mpl e f unct i on.


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1. 3 APPLI ED PHYSI CS


L T P3 2/ 2 2

Rat i onal e:

Engi neer i ng physi cs i s a f oundati on Cour se. I t spur pose i s t o devel op pr oper under st andi ng of physi calphenomenon and sci ent i f i c t emper i n t he st udent s. Whi l et eachi ng t he subj ect , t eachers shoul d make maxi mum use ofdemonst r at i ons t o make the subj ect i nt er est i ng t o thest udent s.

TOPI C WI SE DI STRI BUTI ON OF PERI ODS_________________________________________________________________Sl . No. Topi cs L T P_________________________________________________________________

1. Measur ement 4 1 -2. Vect or 3 1 -3. For ce and Mot i on 4 1 -4. Dynami cs of r i gi d body ( Rot at i onal Mot i on) 4 1 -5. Fl ui d Mechani cs and Fri ct i on 4 1 -6. Work, Power and Energy 4 2 -7. El ast i ci t y 2 1 -8. Si mpl e Harmoni c Mot i on 4 1 -9. Heat Transf er & Radi at i on 4 2 -10. Appl i cat i on of Sound Waves, Acoust i cs and 6 2 -

Ul t r asoni cs11. A. Opt i cs 4 1 -

B. Fi ber Opt i cs 4 1 -12. D. C. Ci r cui t s 4 1 -13. Di el ectr i cs 4 2 -14. Magnet i c Fi el ds and Materi al s 4 2 -15. Semi Conductor Physi cs 5 1 -16. Nucl ear Physi cs 4 2 -17. Laser & i t s Appl i cat i on 4 1 -18. Non- convent i onal energy sour ces 3 1 -

__________________________________________________________________75 25 50

__________________________________________________________________

DETAI LED CONTENTS:

1. Measur ement

a) Uni t s and Di mensi ons

Fundament al and der i ved uni t s :

S. I . Uni t s & Di mensi ons of physi cal quant i t i es, Di mensi onalf ormul a and di mensi onal equat i on. Pr i nci pl e of homogeni t y ofdi mensi ons and appl i cat i ons of homogeni t y pr i nci pl e t o:

i ) Checki ng t he cor r ect ness of physi cal equat i ons,


19/189


i i ) Der i vi ng r el at i ons among var i ous physi cal quant i t i es,

i i i ) Conver si on of numer i cal val ues of physi cal quant i t i esf r om one syst em of uni t s i nt o anot her . Li mi t at i ons ofdi mensi onal anal ysi s.

b. Er r ors i n measur emnt s, accur acy and pr eci si on, r andom andsyst emat i c er r or s, est i mat i on of pr obabl e er r or s i n t her esul t s of measur ement ( Combi nat i on of err os i n addi t i on,subst r acti on, mul t i pi cat i on and power s) . Si gni f i cant f i gur es,and order of accur acy i n r espr ect t o i nst r ument s, St andarddevi at i on, Var i ance.

2. Vector :

Scal ar and vect or quant i t i es; Addi t i on, Subt r act i on,Resol ut i on of vect or - Car t esi an component s of vect or , Scal arand vect or pr oduct of t wo vect or .

3. Force and Mot i on

Par abol i c mot i on, pr oj ect i l es thrown hor i zont al l y and at anangl e. Pr obl ems on t i me of f l i ght , hor i zont al r ange, andmaxi mum hori zont al r ange. Cent r al f or ces. Ci r cul armoti on, angul ar vel oci t y, angul ar accel er at i on andcent r i pet al accel er at i on. Rel at i onshi p bet ween l i near andangul ar vel oci t y and accel er at i on. Cent r i pet al andcent r i f ugal f or ces. Pr acti cal appl i cat i ons of cent r i pet alf or ces. Pr i nci pl e of cent r i f uge. Gr avi t at i onal f or ce, Mot i onof sat el l i t es, Kepl er ' s l aws, Escape vel oci t y, Geo-st at i onar y sat el l i t e, Concept of Bl ack hol es, J et pr opul si ont heory, Mot i on of Mul t i - st age Rocket , SLV, PSLV and GSLVRocket s.

4. Dynami cs of Ri gi d Body ( Rotat i onal Mot i on)

Ri gi d body, Rotat i onal mot i on, Moment ofi ner t i a, Theorems( Per pendi cul ar and Par al l el axi s) of momentof i ner t i a (St at ement ) . Expr essi on of M. I . of r egul arbodi es, Radi us of gyrat i on, angul ar moment um, Conservat i onof angul ar moment um, Tor que, Rotat i onal ki net i c energy.Rol l i ng down t he sl ant pl anes.

5. Fl ui d Mechani cs & Fri ct i on

Sur f ace t ensi on, Capi l l ar i es, Equat i on of cont i nui t y( A1V1=A2V2) , Ber noul l i ' s t heorem, st r eam l i ne and Tur bul ent

f l ow, Reynol d' s number.

I nt r oducti on, Physi cal si gni f i cance of f r i cti on, Advant ageand di sadvant age of f r i ct i on and i t s r ol e i n ever y day l i f e.St at i c and dynami c f r i cti onal f or ces. Coef f i - ci ent s ofst at i c and dynami c f r i ct i on and t hei r measur ement s.vi scosi t y, coef f . of vi scosi t y, & i t s det er mi nat i on byst oke' s met hod.

6. Wor k, Power and Energy


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Work done by f orce on bodi es movi ng on hor i zontal andi ncl i ned pl anes i n t he pr esence of f r i ct i onal f or ces, Conceptof power and i t s uni t s. Cal cul ati on of power ( si mpl e cases) .Concept of ki net i c and potent i al ener gy, var i ous f or ms ofener gy, Conser vat i on of ener gy. For ce const ant of spr i ng,pot ent i al ener gy of a str et ched spr i ng.

7. El as t i ci ty

El asti c i t y, str ess and str ai n. Hooke' s l aw, el asti cl i mi t . Yi el di ng poi nt and br eaki ng poi nt . Modul us ofel ast i ci t y Young' s modul us, bul k modul us and modul us ofr i gi di t y, Poi sson rat i o, Res i l i ence.

8. Si mpl e Harmoni c Mot i on

Per i odi c Mot i on , character st i cs of si mpl e harmoni c moti on;equat i on of S. H. M. and det ermi nat i on of vel oci t y andaccel er at i on. Gr aphi cal r epr esent at i on. Spr i ng- mass system.

Si mpl e pendul um. Der i vat i on of thei r per i odi c t i me. Ener gyconser vat i on i n S. H. M. Def i ni t i on of f r ee, f orced, undampedand damped vi br at i ons, Resonance and i t s shar pness, Q-f actor .

9. Heat Transf er and Radi at i on

Modes of heat t r ansf er , coef f i ci ent of t her malconduct i vi t y and i t s det er mi nati on by ( i ) Sear l e' s met hodf or good conduct or s, and ( i i ) Lee' s met hod f or poorconduct ors. Conduct i on of heat t hrough compound medi a,Conduct i on and convect i on, Radi al f l ow of heat , Bl ackbodyr adi at i on, st ef an' s l aw, Wei n' s di spl acement and r al ei gh-J eans l aws, Pl anck' s Law.

10. Appl i cat i on of Sound Waves

Acoust i cs

Standi ng waves, Cl osed and Open organ pi pes, Resonance, End-cor r ecti on. Def i ni t i on of pi t ch, l oudness, qual i t y andi ntensi t y of sound waves. Echo and r everberat i on andr ever ber at i on t i me. Sabi ne' s f or mul a. Cont r ol ofr ever berat i on t i me ( pr obl ems on r ever ber at i on t i me) .Accoust i cs of bui l di ng def ect s and r emedy.

Ul t r a- Soni c :

Gener at i on, Magnet ost r i cti on, Pi ezoel ectr i c ef f ect,Appl i cat i on i n new t echnol ogy

11. A Opt i cs

Quant um nat ur e of l i ght , Coher r ence ( Spat i al and t emporal ) ,Dual i t y of wave and par t i cl e, Concept of I nt er f er ence,Bi pr i sm, Fr aunhof f er si ngl e and N- sl i t di f f r acti on, Gr at i ng,Resol vi ng and di sper si ve power, El ement ary concept of


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pol ar i sat i on.

B. Fi br e Opt i cs :

Cr i t i cal angl e, Tot al i nt ernal ref l ect i on, Pr i nci pl e off i br e opt i cs, Opt i cal f i br e, Pul se di sper si on i n st ep- i ndexf i br es, Gr aded i ndex f i br e, Si ngl e mode f i br e, Opt i calsensor .

12. D. C. Ci r cui t s

Pr i nci pl e of Wheat St one br i dge and appl i cat i on of t hi spr i nci pl e i n measur ement of r esi st ance ( Met er br i dge andPost Of f i ce Box) ; pot ent i omet er , Ki r chof f ' s Law and t hei rsi mpl e appl i cat i on. Pr i nci pl e of Car ey- Fost er ' s br i dge.El ect r i c potent i al , pot ent i al ener gy, Ener gy of a changedcapaci t or . f l emi ng l ef t hand r ul e, t or que on a cur r ent l oop,Movi ng coi l , Gal vano met er . Chargi ng/ di schargi ng ofcapaci t or s, Bal l i st i c gal vonomet er , i t s char ge sensi t i vi t yand Cur r ent sensi t i vi t y.

13. Di el ect r i cs :

El ect r i c di pol e; ef f ect of el ect r i c f i el d on di el ect r i cs ,pol ar i sat i on.

14. Magnet i c Fi el ds & Mat er i al s :

Di a, Par a and Fer r o- magnet i sm, Fer r i t es, Hyst er esi s, Methodsof pl ot t i ng, Hyst er esi s cur ve of a f er r o magent i c mat er i al sand t hei r uses, Magnet i c ci r cui t s, Ener gy st ored i n magnet i cf i el ds, Basi c i dea of super conducti vi t y, Mei ssner ' s ef f ect,Appl i cat i ons.

15. Semi conductor Physi cs

Ener gy bands i n sol di s, cl assi f i cat i on of sol i ds i nt oconduct ors , i nsul ators and semi conduct ors on t he basi s ofener gy band st r uct ur e. I nt r i nsi c and ext r i nsi c semiconduct or s, El ect r ons and hol es as char ge car r i er s i nsemi conduct ors, Ef f ect of t emper atur e i n conduct i on i nsemi conduct ors, P- t ype and N- t ype semi conduct ors, P- Nj unct i on f or mat i on, barr i er vol t age, For war d and r eversebi asi ng of a j unct i on di ode, P- N j unct i on devi cechar acter i st i cs, For mat i on of t r ansi stor, t r ansi stor- acti on,Maj or i t y and Mi nor i t y char ge car r i er s, Base, emi t t er and

col l ector cur r ent s and t hei r r el at i onshi p LED' s, Phot o-el ect r i c ef f ect and phot o devi ces.

16. Nucl ear physi cs

Radi oact i vi t y, Nucl ear st abi l i t y, Radi oact i ve emmi ssi on,r adi at i on damage, Nucl ear f i ssi on and f usi on, Nucl earr eact or s ( PHWR- t ype and f ast br eader ) and thei r appl i cat i on,Mass- energy r el at i on, Aut omat i c mass uni t , Mass def ect andbi ndi ng ener gy.


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17. Laser s and i t s Appl i cat i ons

Absorbt i on and Emi ss i on of energy by at om, Spont aneous andSt i mul at ed Emi ssi on, Ei nst ei n' s coef f i ci ent s, Pol uat i oni nver si on, Mai n component of l aser and t ypes of l aser - RubyLaser , He- Ne and Semi - conduct or l aser and t hei rappl i cat i ons. Pr i nci pl es of Hol ogr aphy, I nt r oducti on t oMASER.

18. Non- convent i onal ener gy sour ces:

( a) Wi nd ener gy : I nt r oduct i on, scope and si gni f i cance,measurement of wi nd vel oct y by anemomet er , gener alpr i nci pl e of wi nd mi l l , I ndi an wi nd ener gyprogr amme.

( b) Sol ar ener gy: Sol ar r adi at i on and pot ent i al i t y ofsol ar radi at i on i n I ndi a, uni t of sol ar radi at i on,Sol ar const ant measur ement of sol ar r adi at i on by

pyromet er , and by I nsol at i on met er (sur yamapi ) uses of sol ar ener gy: Sol ar Cooker , sol arwat er heat er , sol ar phot ovol t ai c cel l s, sol ar ener gycol l ect or , Sol ar PV pl ant s i n I ndi a, Moder nappl i cat i ons i n t echnol ogy.


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PHYSI CS LAB

Not e: Any t en exper i ment s are t o be per f ormed.

1. Det er mi nat i on of coef f i ci ent of f r i cti on on a hor i zont al pl ane.

2. Det er mi nat i on of ' Y' ( Young' s Modul us) by Sear l e' s Met hod.

3. Det er mi nat i on of ' g' by pl ott i ng a gr aph T2 ver ses l and usi ngt he f ormul a g=4n2/ Sl ope of t he gr aph l i ne

4. Det er mi nat i on of Spr i ng const ant .

5. Det er mi nat i on of vi scosi t y coef f i ci ent of a l ubr i cant bySt oke' s l aw.

6. Det er mi nat i on of ' k' f or good conduct or ( Sear l e' s Met hod) .

7. Det ermi nat i on of f r equency of AC mai ns by mel de' s met hods

( Transverse and Longi t udi nal Mode)

8. Det er mi nat i on of vel oci t y of sound by r esonance t ube.

9. Det er mi nat i on of E1/ E2 by potent i o meter .

10. Det er mi nat i on of speci f i c r esi st ance by Car r y Fost er br i dge.

11. Det er mi nat i on of r esi t i vi t y by P. O. Box.

12. Ver i f i cat i on of Ki r chof f ' s Law.

13. To obser ve Charact er i st i cs of p- n J unct i on di ode onosci l l scope.

14. To measur e i nst ant aneous and aver age wi nd vel oci t y byi ndi cat i ng cup t ype anemomet er / hand hel d anemomet er .

15. To measur e sol ar i nt ensi t y ( det er mi ne sol ar const ant ) wi t ht he hel p of I nsol ati on met er ( Sur yamapi ) .

16. Demonst r at i on of He- Ne l aser ( I nt er f eromet er )

17. Det er mi nat i on of i nt er nal r esi st ance by pot ent i omet er .

NOTE :

St udent s shoul d be asked t o pl ot a gr aph i n experi ment s( wher e possi bl e) and gr aph shoul d be used f or cal cul at i on ofr esul t s. Resul t s shoul d be gi ven i n si gni f i cant f i gur esonl y.


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1. 4 APPLI ED CHEMI STRY


L T P3 - -

Rat i onal e:

Engi neer i ng Chemi st r y has prof ound and deepr el at i onshi p wi t h t he i ndust r i al and envi r onment alt echnol ogy. Thi s cur r i cul um i nt ends t o i mpar t t echni calknowl edge al ongwi t h pr oduct i ve pr act i ce t o t he st udent s oft he di pl oma engi neeri ng. The t eachers ar e expect ed t o gui det he st udent s i n t he cl assr oom and t he l abor at or i es accor di ngt o t he cur r i cul um by demonst r at i ons and by showi ng r el evantmater i al s and equi pment s t o i ncul cat e i nt er est s i n l earni ngamong st udent s.

TOPI C WI SE DI STRI BUTI ON OF PERI ODS_________________________________________________________________

Sl . No. Topi cs L T P_________________________________________________________________

1. At omi c St r uct ur e 4 - -2 Chemi cal Bondi ng 6 - -3. Cl assi f i cat i on of El ement s 3 - -4. I nst r ument al Met hods 4 - -5. El ect r o Chemi st r y 6 - -6. Chemi cal Ki net i cs 4 - -7. Cat al ysi s 3 - -8. Sol i d State 3 - -9. Col l oi ds 3 - -10. Lubr i cant s 3 - -11. Envi r onment al Pol l ut i on and Cont r ol 3 - -12. Water Treat ment 5 - -13. Cor r osi on 3 - -14. Fuel s 3 - -15. Gl ass and Cerami cs 3 - -16. St r eochemi st r y of Or gani c Compounds 4 - -17. Or gani c React i ons 6 - -18. Or gani c Mat er i al s 9 - -- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -

75 - -- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -

DETAI LED CONTENTS:

1. ATOMI C STRUCTURE :

Basi c concept of atomi c st r uct ur e, Mat t er wave concept ,Schr odi nger wave equat i on, Quantum number , Hai senber g' sUncer t ai nt y Pr i nci pl e, Shapl es of or bi t al s.

2. CHEMI CAL BONDI NG :

Overvi ew of basi c concept , Hydr ogen bondi ng, Val ence bondt heor y, Hybr i di sat i on, VSEPR t heor y, Mol ecul ar or bi t al


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t heor y, Co- or di nat i on bond, Cr yst al f i el d t heor y f ort et r ahedr al car bon.

3. CLASSI FI CATI ON OF ELEMENTS :

Moder n cl assi f i cat i on of el ement s ( s, p, d and f bl cokel ement s) , Per i odi c pr oper t i es : I oni sat i on pot ent i alel ectr o negat i vi t y, El ectr on af f i ni t y, Bor n- Haber cycl e.

4. I NSTRUMENTAL METHODS :

UV- vi si bl e, I R and NMR spect r oscopy, Basi c pr i nci pl es, Beer -Lambert s Law and Appl i cat i on of spect r oscopy.

5. ELECTRO CHEMI STRY :

Ar r heni us Theor y of el ectr ol yt i c di ssoci at i on, Tr anspor tnumber , El ect r ol yti c conduct ance, Ost wal d di l ut i on l aw.Concept of Aci d and bases : Br onst ed, Ar r heni us and Lewi st heory. Concept of pH and i t measurement by pH met er . Buf f er

sol ut i ons, I ndi cat or s, Sol ubi l i t y pr oduct , Common i on ef f ectwi t h t hei r appl i cat i on, Redox r eact i ons, El ect r odepot ent i al ( Ner nst Equat i on) , El ect r o- chemi cal cel l ( Gal vani cand El ect r ol yti c) . EMF of a cel l and f r ee ener gy change.St andar d el ect r ode pot ent i al , El ect r o chemi cal ser i es andi t s appl i cat i on.

Concent r at i on cel l s, r ef er ence el ect r odes ( Hydr ogenel ect r ode) cel l s - Pr i mar y, Secondar y and Fuel cel l ,Lacl anche' s or dr y cel l , Aci d st or age cel l ( Leadaccumul at or ) and Al kal i st r oge cel l ( Edi son accumul ator ) ,Fuel cel l , Sol ar cel l ( Phot ovol t ai c cel l ) , Numer i calpr obl ems based on t opi cs.

6. CHEMI CAL KI NETI CS :

I nt r oducti on, or der and mol ecul ar i t y of r ecti on. Acti vat i onener gy, Rat e l oss, r at e const ant s, I st or der r eact i ons and2nd or der r eact i ons.

7. CATALYSI S :

Def i ni t i on Char acter i st i cs of cat al yt i c reacti ons, Cat al yt i cpr omot ors and poi son , Aut ocat al ysi s and Negati ve cat al ysi s,Act vat i on ener gy, Theor y of cat al ysi s, Appl i cat i on

8. SOLI D STATE :

Types of sol i ds ( Amor phous and Cr yst al l i ne) , Cl ass i f i cat i on( Mol ecul ar , I oni c, Coval ent , Met al l i c), Band t heor y ofsol i ds ( Conduct or s, Semi conduct or s and I nsul ator s) , t ypes ofCr yst al s, FCC, BCC, Cr yst al i mper f ect i on.

9. COLLOI DAL STATE OF MATTER :

Concept of col l i dal and i t s t ypes, Di f f er ent syst em of


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col l oi ds, Di sper sed phase and di sper si on medi um.Met hods of prepar at i on of col l oi dal sol ut i ons, Di al ysi s andel ectr odi al ysi s. Pr oper t i es of col l oi dal sol ut i on wi t hspeci al r ef er ence t o absorpt i on, Br owni an Movement , t yndalef f ect, El ectr o phor esi s and coagul at i on. r el at i ve st abi l i t yof hydr ophi l l i c and hydr ophobi e col l oi ds. Pr ot ect i on andpr ot ect i ve col l oi ds. Emul si on, Types, pr epar at i on, pr oper t i esand uses. Appl i cat i on of col l oi ds chemi st r y i n di f f er enti ndustr i es .

10. LUBRI CANTS :

Def i ni t i on, cl assi f i cat i on, Necessasi t y and var i ous ki nds ofl ubr i cant s. Funct i on and mechani sm of act i on of l ubr i cant sand exampl es. Proper t i es of l ubr i cant s, I mpor t ance ofaddi t i ve compunds i n l ubr i cant s, Synt het i c l ubr i cant s andcut t i ng f l ui ds . I ndustr i al appl i cat i on, i t s f unct i on i nbear i ng.

11. ENVI RONMENTAL POLLUTI ON AND I TS CONTROL :

Concept and var i ous t ypes of envi r onment al pol l ut i on wi t hspeci al r ef er ence t o ai r pol l ut i on and wat er pol l ut i on.Gener al measur es t o cont r ol envi r onment al pol l ut i on.depl et i on of Ozone l ayer , Gr een house ef f ect , Aci d r ai n,Smog f ormat i on, Chemi cal and phot ochemi cal r eact i on, Var i ousspeci es i n at mospher e. Speci f i c i ndust r i al pol l ut i on l i keEur o- I and Eur o- I I .

12. WATER TREATMENT :

Concept of hard and sof t water , Hardness of water , I t sl i mi t s and determi nat i on of hardness of water by EDTAmethod. Sof t eni ng methods (Onl y Sods l i me, Zeol ot e and I onexchange r esi n pr ocess) . Di sadvantage of hard water i ndi f f er ent i ndust r i es, Boi l er f eed wat er boi l er scal ef ormat i on, Corr osi on, Caust i c embr i t l ement , pr i mmi ng andf oar mi ng.

Char act er i st i cs i mpar t ed by var i ous i mpur i t i es orcont ami nant s such as col our , odour , t ast e and sedi ment s andt hei r anal ys i s .

Anal ysi s of Wat er :

A. Est i mat i on of chl or i des i n wat er .B. Deter mi nat i on of di ssol ved oxygen.

Di si nf ect i ng of Wat er :

By Chl orami c, Ozone and Chl or i nat i on wi t h i t s mechemi sm,Advant age and di sadvant age of chl or i nat i onal , Br eak poi ntchl or i nat i on ( Fr ee r esi dual chl or i nat i on ) . I ndust r i al wast eand sewage, Muni ci pal i t y waste water t r eat ment , Def i ni t i onof BOD and COD. Recycl i ng of wat er - Theor y and Process.Numeri cal pr obl ems based on topi cs.


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13. CORROSI ON :

Concept of met al l i c cor r osi on, Types of cor r osi on andf act or s af f ect i ng t he cor r osi on r at e, Chemi cal andel ect r ochemi cal t heor y of cor r osi on, Oxi de f i l m f or mat i onand i t s char acteri st i cs, t ar ni shi ng f oggi ng and r ust i ng,Prevent i on of cor r osi on by vari ous met hods.

14. FUELS :

Def i ni t i on of f uel , i t s cl assi f i cat i on and t hei rcomposi t i on, Cal or i f i c val ue and det er mi nat i on of cal or i f i cval ue of sol i d and l i qui d f uel s by Bomb cal or i met er byDul ong' s f or mul a.

Li qui d f uel - Pet rol eum and i t s r ef i ni ng, di s t i l l at e ofpet r ol eum ( Ker osene oi l , Di sel and Pet r ol ) , Benzol and Poweral chol .

Knocki ng, Ant i - knocki ng agents, Oct ane number and Cetane

number.

Cr acki ng and i t s t ype, Gasol i ng f r omhydr ogenat i on of coal( Ber gi us pr ocess and Fi scher t r opsch' s pr ocess)

Gaseous Fuel - Coal gas, Oi l gas, Water gas, Producer gas,Bi o gas, LPG, CNG and Sol ar energy

Numer i cal Probl ems based on t opi cs

15. GLASS AND CERAMI CS :

Concept of gl ass and i t s const i t ut ent s, Cl assi f i cat i on anduses of di f f er ent gl ass, El ement ar y i dea of manuf act ur i ngpr ocess of gl ass. I nt r oduct i on t o cer ami cs mat er i al s, I t sconst i t uent . I ndust r i al appl i cat i on of gl ass and cer ami c.

16. STEREOCHEMI STRY OF ORGANI C COMPOUND:

- I somer i sm

- Types of i somer i sm

1. St r uctural i somer i sm 2. St er oi somer i sm ( a) Geomet r i cal ( b) Opt i cal

- Def i ni t i on of chi r al , achi r al st er eogeni c cent r e, pl ane of

symmet r y.

- Types of st er oi somer s-

1. Conf ormers or Rot amers ( Onl y ethanes)2. Conf i gur at i onal i somer s

a. Enant i omersb. Di aster eoi somer s

17. ORGANI C REACTI ONS :


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1. Fundament al auspects -

A. Regent s el ect r ophi l es and nucl eophi l esB. React i on I nt er medi ates

i . Fr ee radi cali i . Car bocat i oni i i . Car bani on

C. Var i ous ef f ect s of subst i t uent s - I nduct i ve, Mesomer i c,El ect r omer i c.

2. A. Mechani sm of addi t i on r eact i on ( Markoni cove' s Rul e,Cyanohydr i n and Per oxi de ef f ect ) ,

B. Mechani sm of Subst i t ut i on reacti ons ( Nucl eophi l l i c-hydr ol ysi s of al kyl e hal i de, el ectr ophi l l i c substi t ut i onhal ogenat i on, Sul phonat i on, Ni r at i on and f r i edel - Cr af tr eacti on.

C. Mechani sm of El i mi nati on r eact i on - Dehydr at i on of pr i mar y

al cohol , Dehyrohal ogenat i on of pr i mary al kyl hal i de.

18. ORGANI C MATERI ALS :

A. POLYMERS :

1. I nt r oduct i on t o basi c t er ms used i n pol ymer chemi st r y andt echnol ogy. Monomers, Aver age degr ee of pol ymeri sat i on,Aver age mol ecul ar wei ght , Pol ymers , Pol ymeri sat i on.

2. Char acteri st i cs of Pol ymer s and t hei r cl assi f i cat i on

A. Addi t i on pol ymer s and t hei r i ndust r i al appl i cat i on-Pol yst yr ene, PVA, PVC, PAN, PMMA, Buna- S, Buna- N,Tef l on.

B. Condensati on pol ymer and t hei r i ndust r i al appl i cat i on :Nyl on 6, Nyl on 6, 6, Bakel i t e, Mel ami ne f ormal dehyde,Ur ea f ormal dehyde, Ter yl ene or Decron, Pol yur ethanes.

3. Free r adi cal pol ymer i sat i on ( Mechani sm)

4. Gener al i dea of Bi o pol ymers

5. Br i ef i dea of bi o degr adabl e pol ymer s.

6. I nor gani c pol ymer s - Si l i cones

B. SOAPS AND DETERGENTS :

1. I nt r oducti on - A. Li pi ds, B. Fat s and Oi l s2. Saponi f i cat i on of f at s and oi l s , Manuf act ur i ng of soap.3. Synt het i c det er gent s, t ypes of det er gent s and i t s

manuf actur i ng.C. EXPLOSI VES: TNT, RDX, Dynami t e.E. Pai nt and Varni shF. Adhesi ves


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1. 5 ENGI NEERI NG MECHANI CS AND MATERI ALS

L T P3 - -

RATI ONALE

TOPI C WI SE DI STRI BUTI ON OF PERI ODS

________________________________________________________________SL. No. Topi c L T P________________________________________________________________1. I nt r oducti on 5 -2. For ce Anal ysi s 12 -3. Gener al condi t i on of equi l i br i um 12 -

4. St r ess & St r ai n 12 -5. Beam & Trusses 12 -6. Mater i al s & Concept s Use I n El ect r oni cs 22 -_______________________________________________________________

Tot al 75 - -________________________________________________________________

DETAI LED CONTENTS

1. I nt r oducti on:

Mechani cs and i t s ut i l i t y. Concept of scal er and vect orquant i t i es. Ef f ect of a f or ce. Tensi on & compr essi on. Ri gi dbody. Pr i nci pl e of physi cal i ndependence of f or ce. Pr i nci pl eof t ransmi ssi bi l i t y of a f orce.

2. For ces Anal ysi s:

Concept of copl aner and non- copl aner f orces i ncl udi ngparal l el f orces. Concur r ent and non- concur r ent f orces.Resul t ant f or ce. Equi l i br i um of f or ces. Law of par al l el ogr amof f or ces. Law of t r i angl e of f or ces and i t s conver se. Lawof pol ygon of f or ces. Sol ut i on of s i mpl e engi neer i ngpr obl ems by anal yt i cal and gr aphi cal methods such as si mpl ewal l cr ane, j i b cr ane and ot her st r uct ur es. Det er mi nat i on ofr esul t ant of any number of f orces i n one pl ane act i ng upon a

pr at i cl e, condi t i ons of equi l i br i um of copl aner concur r entf orce syst em.

3. Gener al Condi t i on of Equi l i br i um:

Gener al condi t i on of equi l i br i um of a r i gi d body undert he act i on of copl aner f or ces, st at ement of f or ce l awof equi l i br i um, moment l aw of equi l i br i um, appl i cat i onof above on body.


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4. Str esses and st r ai ns:

Concept of st r ess and st r ai n. Concept of var i ous t ypes ofst r esses and st r ai ns . Def i ni t i ons of t ensi on, compr essi onshear , bendi ng, tor si on. Concept of vol umet r i c and l ateralst r ai ns, Poi sson' s rat i o. Mechani cal pr oper t i es of MS, SS, CIAl and et c.

5. Beams & Trusses:

Def i ni t i on of st at i cal l y det er mi nat e and i ndet er mi nat et r usses. Types of suppor t s. Concept of t i e & st r ut ,cal cul at i on of r eact i on at t he suppor t of cant i l ever andsi mpl y suppor t ed beams and t r usses. ( si mpl e pr obl ems onl y)

6. A. MATERI ALS & CONCEPT USED I N ELECTRONI CS :

Sol der i ng mater i al s - Type, chemi cal composi t i on andpr oper t i es, Sol der i ng al l oys - Ti n l ead, Ti n ant i mony, Ti n

si l ver , Lead si l ver , Ti n zi nc, Di f f er ent t ypes of f l ux andt hei r pr oper t i es, Pr oper t i es of pl ast i cs mat er i al s, Epoxymater i al s f or PCB ( Si ngl e and mul t i l ayer boar d) , Emul si onparamet er s, Fi l m emul si on, Type of l ami nates ( Phenol i c,Epoxy, Pol yst er , Si l i con, Mel ami ne, Pol ymi de) , Pr oper t i es ofcopper cl ad l ami nat es, Mat er i al ( Fi l l er , Resi n, Copper Foi l )Phot o pr i nt i ng basi c f or doubl e si de PCB, Phot o r esi nmater i al s coat i ng pr ocess mat er i al s, Screen pr i nt i ng and i t smater i al s Et chi ng agent , Fi l m pr ocessi ng and used mat er i al s.

( B) Sol der i ng & Br azi ng:

For bl ack Gal vani sed and Ti ncoat ed I r on sheet , br assand copper sheet s onl y.

( 1) I t s concept , compar i son wi t h wel di ng as j oi ni ngmet hod and cl assi f i cat i on, el ect r i c sol der i ng andf or ge sol der i ng.

( 2) Sol der i ng oper at i on- edge pr epar at i on of j oi nt s,Pi ckl i ng and degr easi ng, Fl uxi ng, Ti nni ng andSol der i ng. Wave sol der i ng, sol der mask, Di psol der i ng, Dr ag sol der i ng,

( 3) Mat er i al s Used- Common f l uxes, sof t and hardsol der , sol der wi r e ( Pl ai n and Resi n cor e) andst i cks, spel t er s and t hei r speci f i cat i ons and

di scr i pt i on ( For I dent i f i cat i on Onl y) , f or gesol der i ng bi t s.

( 4) El ectr i c sol der i ng i r on, ot her sol der i ng t ool s.

( 5) Common def ect s l i kel y t o occur s dur i ng and af t ersol der i ng.

( 6) Saf et y of Per sonnel , Equi pment & Tool s t o beobserved.


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1. 6 ELECTRI CAL ENGI NEERI NG- I

( Common wi t h I nst r ument at i on & Cont r ol Engi neer i ng and Comput erEngg. )

L T P3 - 2

RATI ONALE

El ect r i cal ener gy i s most convi ni ent neat and cl eansour ce of ener gy f or i ndust r i al appl i cat i ons. The st udent i ssupposed t o posses basi c knowl edge of el ect r i cal engi neer i ngmater i al s such as conduct i ng, non conduct i ng, i nsul ati ng,magnet i c, semi conduct or and some speci al pur pose mater i al s.Fundament al knowl edge of el ect r ost at i cs, el ect r omagnet i smwi l l be hel pf ul i n under st andi ng t he per f ormance of D. C. andA. C. ci r cui t s. To f ace t he r out i ne pr obl ems of wor l d of wor kchapt er s on bat t er i es, t r ansi ent s and harmoni cs have al sobeen added.


_________________________________________________________________Sr . No. Uni t s Coverage Ti me

L T P_________________________________________________________________1. Cl assi f i cat i on 3 - -2. Conduct i ng Mat er i al s 8 - -3. I nsul at i ng Mat er i al s 8 - -4. Magnet i c Mat er i al s 6 - -5. Semi Conduct or & Speci al Pur pose 6 - -

Mat er i al s6. D. C. Ci rcui t s 6 - -7. El ect rost at i cs 8 - -8. El ect r omagnet i sm 8 - -9. A. C. Theor y 8 - -10. Bat t er i es 6 - -11. Transi ent s & Harmoni cs 8 - -_______________________________________________________________

Tot al 75 - 50________________________________________________________________

DETAI LED CONTENTS

1. CLASSI FI CATI ON:

Cl assi f i cat i on of mat er i al s i nt o Conducti ng mat er i al s,I nsul at i ng mat er i al s, Semi - conduct i ng mat er i al s wi t hr ef er ence t o t hei r at omi c str uct ur e.

2. Conduct i ng Mat er i al s:

A. Resi st i vi t y and f actor s af f ecti ng r esi st i vi t y suchas t emper atur e, al l oyi ng and mechani cal st r essi ng.

B. Cl assi f i cat i on of conduct i ng mat er i al s i nt o l ow


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r esi st i vi t y and hi gh r esi st i vi t y mat er i al s. Someexampl es of each and t hei r t ypi cal appl i cat i ons.

3. I nsul at i ng Mat er i al s:

A. El ect r i cal Propert i es :

Vol ume r esi st i vi t y, Sar f ace r esi st ance, Di el ectr i cl oss, Di el ect r i c st r engt h ( Br eak down val t age) andDi ecl ectr i c const ant .

B. Chemi cal Pr oper t i es:

Sol ubi l i t y, Chemi cal r esi st ance, Weat her abi l i t y.

C. Physi cal Pr oper t i es:

Hygr oscopi ci t y, t ensi l e and Compr essi ve st r engt h,Abr assi ve r esi st ance, Br i t t l eness.

D. Ther mal Pr oper t i es:

Heat r esi st ance, cl assi f i cat i on accor di ng t oper mi ssi bl e t emper at ur e r i se, Ef f ect of el ectr i calover l oadi ng on t he l i f e of an el ectr i cal appl i ance.

E. Pl asti c I nsul at i ng Mat er i al s:

Cl assi f i cat i on i nt o t her mopl ast i c and ther moset t i ngcat agor i es, exampl es of each and t hei r t ypi calappl i cat i ons.

4. MAGNETI C MATERI ALS:

A. Fer r omagnet i sm, domai ns, per meabi l i t y, hyster i si s l oop-( i ncl udi ng coer r eci ve f orce and r esi dual magnet i sm) andmagnet i c satur at i on.

B. Sof t and Hard magnet i c mat er i al s, t hei r exampl es andt ypi cal appl i cat i ons.

5. SEMI CONDUCTOR AND SPECI AL PURPOSE MATERI ALS:

N- t ype and P- t ype mater i al s, appl i cat i on of semi - conduct ormat er i al s, mat er i al s used i n t r ansi st or and I . C.manuf act ur e.

6. D. C. CI RCUI TS:

( i ) Ohm' s l aw, r esi st i vi t y, ef f ect of t emper at ur e onr esi st ances, heat i ng ef f ect of el ectr i c cur r ent ,conver si on of mechani cal uni t s i nt o el ect i r cal uni t s.

( i i ) Ki rchof f ' s l aws, appl i cat i on of Ki rchof f ' s l aws t osol ve, s i mpl e d. c. ci rcui t s .

( i i i ) Theveni ns t heorem, maxi mum power t r asf er t heorem,


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Nort on' s t heorem and super posi t i on t heorem, si mpl enumeri cal pr obl ems.

7. ELECTROSTATI CS:

( i ) Capaci t ance and capaci t or , def i ni t i on, var i ous t ypes.

( i i ) Char gi ng and di schargi ng of a capaci t or, gr owt h anddecay of cur r ent i n a capaci t i ve ci r cui t .

( i i i ) Ener gy st or ed i n a capaci t or .

( i v) Capaci t ance i n t er ms of di mensi ons of par al l el pl at ecapaci t or .

( v) Di el ect r i c const ant of mat er i al , Br eak down vol t age ofa capaci t or .

( vi ) Ser i es and par al l el connecti on of capaci t or s.

8. ELECTRO MAGNETI SM:

( i ) Concept of mmf , f l ux, r el uct ance and per meabi l i t y.

( i i ) Ener gy st or ed i n a magnet i c f i el d and an i nduct or .

( i i i ) Sol ut i on of pr obl ems on magnet i c ci r cui t s.

( i v) Far aday' s l aws of el ect r omagnet i c i nduct i on, Lenz' sl aw, Physi cal expl anat i on of sel f and mut uali nduct ance.

( v) B- H cur ve, Hyster i si s, Eddy cur r ent s el ement ar y i deasand si gni f i cance.

( vi ) Gr owt h and decay of cur r ent i n an i nduct i ve ci r cui t .

( vi i ) For ce bet ween t wo paral l el cur r ent car r yi ng conduct or sand i t s s i gni f i cance.

( vi i i ) Cur r ent car r yi ng conduct or i n a magnet i c f i el d andi t s s i gni f i cance.

9. A. C. THEORY:

( i ) Concept of al t er nat i ng vol t age and cur r ent , di f f er encebet ween A. C and D. C. .

( i i ) Gener at i on of al t er nat i ng vol t age, equat i on ofsi nusoi dal wavef orm.

( i i i ) Def i ni t i on and concept of cycl e, f r equency, Ti meper i od, ampl i t ude, i nst ant aneous val ue, aver age val ue,RMS val ue, peak val ue, f or m f act or , Peak f act or .

( i v) Phase and phase di f f er ence, r epr esent at i on ofal t er nati ng quant i t i es by phasor, addi t i on and


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subt r acti on of al t er nat i ng quant i t i es.

10. BATTERI ES:

( i ) Const r uct i on of l ead aci d and ni ckel cadmi um bat t er i es.

( i i ) Char gi ng and mai nt enance of bat t er i es.

( i i i ) Rat i ng of bat t er i es .

( i v) Back up bat t er i es ( Li t hi um & Si l ver Oxi de bat t er i es)

(v ) Shel f l i f e of bat t er i es .

11. TRANSI ENTS & HARMONI CS:

I nt r oducti on, Types of t r asi ent s, I mpor t ant di f f er ent i alequat i ons, Fi r st and Second or der equat i ons, Tr ansi ent s i nR- L ser i es ci r cui t s ( D. C. ) , Shor t c i r cui t cur r ent , Ti meconstant , Tr ansi ent s i n R- L ser i es ci r cui t s ( A. C. ) ,

Tr ansi ents i n R- C ser i es ci r cui t s ( D. C. ) , Tr ansi ents i n R- Cser i es ci r cui t s ( A. C) , Doubl e ener gy tr ansi ent s.

Fundament al wave and har moni cs, Di f f erent compl ex wavef orms,Gemeral equat i on of compl ex wave, R. M. S. val ue of a compl exwave, Power suppl i ed by compl ex wave, Harmoni cs i n si ngl ephase a. c. ci r cui t s, Sel ect i ve r esonance due t o har moni cs,Ef f ect of har moni cs on measur ement of i nduct ance andcapaci t ance


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ELECTRI CAL ENGI NEERI NG- I LAB:

LI ST OF PRACTI CALS:

1. Ohm' s l aw ver i f i cat i on2. To ver i f y t he l aws of ser i es and par al l el connect i ons of

resi s tances i . e. t o ver i f y: -

( i ) The t ot al r esi st ance i n ser i es connecti ons.

RT=R1+R2+R3. . . . . . .

Wher e RT i s t he t otal r esi st ance and R1, R2, R3 et c. aret he r esi st ances connect ed i n ser i es.

( i i ) The t ot al r esi stance i n par al l el connecti ons.

1/ RT=1/ R1 + 1/ R2 + 1/ R3. . . . . .

Wher e RT i s t he t otal r esi st ance and R1, R2, R3 et c. are

t he r esi st ances connect ed i n paral l el . Al so t o concl udet hat t he t ot al r esi stance val ue of a par al l el c i r cui ti s l ess t han t he any i ndi vi dual r esi st ance.

3. To ver i f y Ki r chof f ' s f ol l owi ng l aws: -

( i ) The al gebr i c sum of t he cur r ent s at a j uncti on i s zer o( i i ) The al gebr i c sum of t he e. m. f . i n any cl osed ci r cui t i s

equal t o t he al gebr i c sum of I R pr oduct s ( dr ops)i n that ci r cui t .

4. To measur e t he r esi st ance of an ammet er and a vol t meter andt o concl ude t hat ammeter has ver y l ow r esi st ance wher easvol t met er has ver y hi gh resi st ance.

5. To ver i f y Theveni n' s and maxi mumpower t r ansf er theorems6. To f i nd t he r at i o of i nduct ance val ues of a coi l havi ng ai r

core and i r on core r espect i vel y and t hus see t hat by t hei nt r oduct i on of a magnet i c mat er i al i nsi de t he coi l , t hei nduct ance val ue of t he coi l i s subst ant i al l y i ncreased.

7. To ver i f y t he r el at i on: -

CT=( C1*C2) / ( C1+C2)and

CT=C1+C2

For t wo capaci t or s, connect ed i n ser i es and par al l el

r especti vel y.

8. To t est a bat t er y f or charged and di scharged condi t i ons andt o make connect i ons f or i t s chargi ng.

9. To show t hat the r ange of an ammeter ( d. c. and a. c. ) and avol t met er (d. c. and a. c. ) can be ext ended wi t h t he use ofshunt s and mul t i pl i er .

10. To conver t t he gi ven gal vanometer i nt o a vol t meter and anammet er .


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1. 7 ELECTRONI C COMPONENTS & DEVI CES

( Common wi t h I nst r ument at i on & Cont r ol Engi neer i ng &Comput er Engi neer i ng)

L T P3 - 3

RATI ONALE

Knowl edge of El ect r oni c component s & devi ces i s qui t eessent i al f or a st udent of el ect r oni cs engi neer i ng di pl omaprogr amme. Wi t h t he knowl edge of t hese act i ve and passi vecomponent s he wi l l wor k sucessf ul l y i n ever y f i el d of t hebr anch. Ther ef ore a di pl oma st udent i n el ect r oni csengi neer i ng must be equi pped wi t h t he f undament al knowl edgeabout el ect r oni c component s, vol t age and cur r ent sour ce,semi conduct or di ode, t r ani st or s, FET and i nt egr at edci r cui t s f or successf ul handl i ng of i ndust r i al pr obl ems.


_________________________________________________________________Sr . No. Uni t s Coverage Ti me

L T P_________________________________________________________________1. I nt r oducti on To El ectr oni cs, I t s 4 - -

Component and Deci ves, I t s Appl i cat i on2. Passi ve Components 9 - -3. Vol t age & Cur r ent Sour ce 4 - -4. Semi conduct or Di ode 12 - -5. I nt r oducti on To Bi pol ar Tr ansi st or 10 - -6. Tr ansi st or Bi asi ng & St abi l i zat i on 9 - -7. Si ngl e St age Tr ansi st or Ampl i f i er 9 - -8. Fi el d Ef f ect Tr ansi stor 6 - -9. Met al Oxi de Fi el d Ef f ect Tr ansi st or 4 - -10. Compl ement ary Met al Oxi de Fi el d Ef f ect 4 - -

Tr ansi st or11. I nt egr at ed El ectr oni cs 4 - -_______________________________________________________________

Tot al 75 - 75________________________________________________________________

DETAI LED CONTENTS

1. I NTRODUCTI ON TO ELECTRONI CS:

1. 1. Appl i cat i on of El ect r oni cs i n di f f er ent f i el ds .

1. 2. Br i ef i nt r oduct i on t o act i ve component s and devi ces.

2. PASSI VE COMPONENTS:

2. 1. Resi st er - Wor ki ng char acteri st i cs/ pr oper t i es, Resi st or s-Carbon f i l m, met al - f i l m, carbon composi t i on, wi r e wound andvar i abl e t ype ( pr eset s and potent i omet er s) const r uct i onaldet ai l s , char acter i st i cs ( s i ze, vol t age, t ol er ancet emper at ure and f r equency dependance and noi seconsi der at i on, speci f i cat i on Test i ng, mut ual compari son andt ypi cal appl i cat i ons, Vol t age Dependent Resi st or ( VDR) .


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2. 2. Capaci t or s- Wor ki ng char acteri st i cs/ pr oper t i es, Capaci t or s-

pol yster , Met al l i zed pol yster , cer ami c paper mi ca andel ectr ol yt i c t ant al um and sol i d al umi ni um t ypes;const r ucti on det ai l s and t est i ng, speci f i cat i ons,mut ual compar i son & t ypi cal appl i cat i ons.

2. 3. I nduct ors, Tr ansf ormer s and RF coi l s- Worki ngchar acter i st i cs/ pr oper t i es

Methods of manuf act ur e of i nduct ors, RF coi l s and smal lpower and AF t r ansf ormer and t hei r test i ng. Pr oper t i es ofcor es.Needs and t ype of shi el di ng.

3. VOLTAGE AND CURRENT SOURCES:

3. 1. Concept of const ant vol t age sour ces, symbol and gr aphi calr epr esent at i on, char acteri st i cs of i deal and pr acti calvol t age sour ces.

3. 2. Concept of const ant cur r ent sour ce, symbol and gr aphi calr epr esent at i on, char acteri st i cs of i deal and pr acti calcur r ent sour ces.

3. 3. Conver si on of vol t age sour ce i nt o a cur r ent sour ce andvi cever sa

3. 4 Concept of f l oat i ng and gr ounded D. C. suppl i es.

4. SEMI CONDUCTOR DI ODE:

4. 1. P- N j unct i on di ode, Mechani sm of cur r ent f l ow i n P- Nj unct i on dr i f t and di f f usi on cur r ents, depl et i on l ayer ,pot ent i al bar r i er , P- N j uncti on di ode char acteri st i cs, zener& aval anche br eakdown, concept of j unct i on capaci t ance i nf orwar d & r ever se bi as condi t i ons.

4. 2. Semi conduct or di ode charact er i st i cs, dynami c r esi st ance &t hei r cal cul at i on f r om di ode char acteri st i cs, dynami cr esi st ance of di ode i n t er ms of di ode cur r ent . Var i at i on ofl eakage cur r ent and f orward vol t age wi t h t emper ature(Nodever at i on) .

4. 3. Di ode ( P- N j uncti on) as r ecti f i er , Hal f wave r ecti f i er f ul lwave r ecti f i er i ncl udi ng br i dge r ecti f i er , r el at i onshi pbetween D. C. out put vol t age and A. C. i nput vol t age

rect i f i cat i on ef f i ci ency and r i ppl e f actor f or rect i f i erci rcui t s , f i l t er ci rcui t s shunt capaci t or , ser i es i nduct or,capaci t or i nput f i l t er , bl eeder resi st ance, wor ki ng of t hef i l t er s and t ypi cal appl i cat i ons of each t ype.

4. 4. Di f f er ent t ypes of di odes, char acteri st i cs and typi calappl i cat i on of power di odes, zener di odes, var act or di odes,poi nt cont act di odes, t unnel di odes, LED' s and photo di odes.

4. 5. I mpor t ant speci f i cat i ons of r ect i f i er di ode and zener di ode.


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5. I NTRODUCTI ON TO BI POLAR TRANSI STOR:

5. 1. Concept t o bi pol ar t r ansi st or as a t wo j unct i on t hr eet ermi nal devi ce havi ng t wo ki nds of charge carr i er s, PNP andNPN t r ansi st ors, t hei r symbol s and mechani sms of curr entf l ow, expl anat i on of f undament al cur r ent r el at i ons.Concept of l eakage cur r ent ( I CBO) ef f ect of t emperat ur e onl eakage cur r ent .

St andar d not at i on f or cur r ent and vol t age pol ar i t y.

5. 2. CB, CE and CC conf i gr uat i ons.

( a) Common base conf i gurat i on ( CB) : i nputs and out putchar act er i st i cs, det er mi nat i on of t r ansi st or par amet er s( i nput and out put ) dynami c r esi st ance, cur r entampl i f i cat i on f actor .

( b) Common emi t t er conf i gur at i on: cur r ent r el at i ons i n CE

conf i gr at i on, col l ect or cur r ent i nt er ms of base cur r entand l eakage cur r ent ( I CEO) , r el at i onshi p between t hel eakage cur r ent i n CB and CE conf i gur at i on, i nput andout put char act er i st i cs, det er mi nat i on of dynami c i nputand out put r esi st ance and cur r ent ampl i f i cat i on f act orB f r om t he char acter i st i cs.

( C) Common col l ect or conf i gur ati on: Expr essi on f or emi t t ercur r ent i n t er ms of base cur r ent and l eakage cur r ent i nCC conf i gur at i on.

5. 3 Compar i si on of CB and CE conf i gur at i on wi t h r egards t odynami c i nput and out put r esi st ance, cur r ent gai n and l eakgecur r ent per f ormance of CE conf i gur at i on f or l ow f r equencyvol t age ampl i f i cat i on. Typi cal appl i cat i on of CBconf i gur at i on i n ampl i f i cat i on.

5. 4 Tr ansi st or as an ampl i f i er i n CE conf i gur at i on.

( a) DC l oad l i ne, I t s equat i on and dr awi ng i t on col l ect orcharact er i s t i cs .

( b) Det er mi nat i on of smal l si gnal vol t age and cur r ent gai nof a basi c t r ansi st or ampl i f i er usi ng CE out putcharact er i st i c and DC l oad l i ne, Concept of power gai nas a pr oduct of vol t age gai n and cur r ent gai n.

6 TRANSI STOR BI ASI NG AND STABI LI ZATI ON OF OPERATI NG POI NT:

6. 1 Di f f er ent t r ansi stor bi asi ng ci r cui t s f or f i xi ng t heoper at i ng poi nt s, ef f ect of t emper at ur e on oper at i ng poi nt .Need and met hod f or st abi l i zat i on of oper at i ng poi nt .Ef f ect of f i xi ng oper at i ng poi nt i n cut - of f or sat ur at i onr egi on on per f or mance of ampl i f i er .


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6. 2 Cal cul at i on of oper at i ng poi nt f or di f f er ent bi asi ngci r cui t s, use of Theveni n' s t heor em i n anal ysi ng pot ent i aldi vi der bi as i ng c i rcui t .

6. 3 Si mpl e desi gn pr obl ems on pot ent i al di vi der bi asi ng ci r cui t .

7 SI NGLE STAGE TRANSI STOR AMPLI FI ER:

7. 1 Anal ysi s of Si ngl e St age CE, CB and CC ampl i f i er .

7. 2 Si ngl e st age CE ampl i f i er ci r cui t s wi t h pr oper bi asi ngcompontent s.

7. 3 AC l oad l i ne and i t s use i n :( a) Cal cul at i on of cur r ent and vol t age gai n of a si ngl e-

stage ampl i f i er c i r cui t .

( b) Expl anati on of phase r ever sal of t he out put val t agewi t h r espect t o i nput vol t age.

7. 4 Tr ansi st or hybr i d l ow f r equency model i n CE conf i gur ati on,' h' par amet er and t hei r physi cal si gni f i cance, t ypi calval ues of ' h' paramet er s and t hei r det er mi nat i on byt r ans i stor charact er i s t i cs .

7. 5 Expr essi ons f or vol t age gai n, cur r ent gai n, i nput andout put i mpedance f or a si ngl e st age CE ampl i f i er ci r cui t i n' h' par amet er s, appr opr i at e appr oxi mat i ons.

8. FI ELD EFFECT TRANSI STOR ( FET)

8. 1 Const r uct i on, oper at i on, char act er i st i cs and Bi asi ng ofJ unct i on FET.

8. 2 Anal ysi s of Si ngl e St age CS, CG and CD ampl i f i er s. ( Onl yBr i ef I dea)

9. MOSFET :

9. 1 Const r uct i on, oper at i on, Char act er i st i cs and Bi asi ng ofMOSFET i n bot h depl et i on and enhancement modes.

9. 2 Anal ysi s of Si ngl e St age CS, CG and CD ampl i f i ers . ( Onl yBr i ef I dea)

10. CMOS :

10. 1 Const r uct i on, operat i on and Charact eri st i cs of CMOS i n bothdepl et i on and enhancement modes.

10. 2 Use of CMOS as I nvert or , Di f f erent appl i cat i on of CMOS, CMOSI C.

10. 3 Compari son of J EET, MOSFET and Bi pol ar t r ansi st or.


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11 I NTEGRATED ELECTRONI CS

11. 1 I nt r oduct i on t o I C and i t s i mport ance i n moder n el ect r oni cs,t ypes of I C' s, some exampl es of popul er I C' s ( 74 & 40ser i es i . e. 741, 714, 555, 810, 4046 et c. ) .

11. 2 Fabr i cat i on of t r ansi st or by pl aner pr ocess. A t ypi calf abr i cat i on pr ocess f or I cs (br i ef expl anat i on) .

11. 3 Di f f er ence bet ween SSI , MSI , LSI , VLSI .

LI ST OF BOOKS

1. Bhargava, Kul shr esht ha & Gupt a - " Bai sc El ect r oni cs & Li nearCi r cui t s" - Tat a Mcgr aw- Hi l l .

2. Mal vi no, A. P. - "El ectr i ni cs Pr i nci pl es" - Tat a Mcgr aw-Hi l l .

3. Sedr a, Adel S. Smi t h, Kennet h. C.

Electronics Evaluation Scheme

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