Electrical and Optical Simulation of Organic Light...

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1 Electrical and Optical Simulation of Organic Light-Emitting Diodes and White Organic Light-Emitting Diodes Electrical and Optical Simulation of Organic Light-Emitting Diodes and White Organic Light-Emitting Diodes Copyright 2008 Crosslight Software Inc. www.crosslight.com

Transcript of Electrical and Optical Simulation of Organic Light...

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Electrical and Optical Simulation of Organic Light-Emitting Diodes and

White Organic Light-Emitting Diodes

Electrical and Optical Simulation of Organic Light-Emitting Diodes and

White Organic Light-Emitting Diodes

Copyright 2008 Crosslight Software Inc.www.crosslight.com

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Contents Contents Contents

Treating organic semiconductor with quantum drift-diffusion model.Light extraction using 3D ray-tracing (non-microcavity model).Electroluminescent spectra modeling with Frenkel exciton. Inclusion of microcavity effects.Application for AMOLED.Triplet diffusion and WOLEDLow-voltage PIN structuresTandem OLED

Treating organic semiconductor with quantum drift-diffusion model.Light extraction using 3D ray-tracing (non-microcavity model).Electroluminescent spectra modeling with Frenkel exciton. Inclusion of microcavity effects.Application for AMOLED.Triplet diffusion and WOLEDLow-voltage PIN structuresTandem OLED

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Quantum drift-diffusion for OLEDQuantum driftQuantum drift--diffusion for OLEDdiffusion for OLED

Quantum drift-diffusion model for current flow/spreading.Poole-Frenkel field dependent mobility model.Mobility-dependent bi-molecular radiative recombination model.Quantum tunneling model for Schottky barriers and heterojunctions.Self-heating model.Quantum wells?

Quantum drift-diffusion model for current flow/spreading.Poole-Frenkel field dependent mobility model.Mobility-dependent bi-molecular radiative recombination model.Quantum tunneling model for Schottky barriers and heterojunctions.Self-heating model.Quantum wells?

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An ExampleAn ExampleAn Example

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CoordinatesCoordinatesCoordinates

Metal Cathode

ITO Anode

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LUMO

HOMO

Fermi levels

TPD organic material

ALQ3 organic material

Energy band diagram of a OLED of TPD/ALQ3

Band DiagramBand DiagramBand Diagram

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3D Potential Distribution3D Potential Distribution3D Potential Distribution

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3D Electron Density3D Electron Density3D Electron Density

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Hole Density Hole Density Hole Density

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3D Radiative Light Source3D 3D Radiative Radiative Light SourceLight Source

Material Interface

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I-V CurveII--V CurveV Curve

Remark: I-V characteristic is sensitive to band alignment, mobility and metal work function. Careful calibration is recommended since organic material parameters have large uncertainties.

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Contents Contents Contents

Treating organic semiconductor with quantum drift-diffusion model.Light extraction using 3D ray-tracing (non-microcavity model).Electroluminescent spectra modeling with Frenkel exciton. Inclusion of microcavity effects.Example of an AMOLED.Triplet diffusion and WOLEDLow-voltage PIN structuresTandem OLED

Treating organic semiconductor with quantum drift-diffusion model.Light extraction using 3D ray-tracing (non-microcavity model).Electroluminescent spectra modeling with Frenkel exciton. Inclusion of microcavity effects.Example of an AMOLED.Triplet diffusion and WOLEDLow-voltage PIN structuresTandem OLED

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3D Ray-tracing with glass plate3D Ray3D Ray--tracing with glass platetracing with glass plate

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Angular distribution of emitted power from the OLED with glass plate at the bottomin a 3D simulation -y emission is clearly favored.

3D Raytrace Power 3D 3D Raytrace Raytrace Power Power

+x +y -x -y

+z (theta=0)

-z (theta=180)

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Simulation statisticsSimulation statisticsSimulation statistics

TRANSMITTED POWER in absolute and relative to total (%) units THROUGH

-y side:

1.189041490400453E-008 26.159221035142593

+y side:

8.326234960594208E-010 1.831793276207384

-x side:

8.134143692337187E-009 17.895326992147012

+x side:

8.066635157261732E-009 17.746806464894195

-z side:

8.265096296359655E-009 18.183426115803123

+z side:

8.265096296359703E-009 18.183426115803226

Glass substrate helps extract power

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Contents Contents Contents

Treating organic semiconductor with quantum drift-diffusion model.Light extraction using 3D ray-tracing (non-microcavity model).Electroluminescent spectra modeling with Frenkel exciton.Inclusion of microcavity effects.An example of AMOLED.Triplet diffusion and WOLEDLow-voltage PIN structuresTandem OLED

Treating organic semiconductor with quantum drift-diffusion model.Light extraction using 3D ray-tracing (non-microcavity model).Electroluminescent spectra modeling with Frenkel exciton.Inclusion of microcavity effects.An example of AMOLED.Triplet diffusion and WOLEDLow-voltage PIN structuresTandem OLED

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Frenkel ExcitonFrenkel ExcitonFrenkel Exciton

Organic semiconductor emits light via Frenkel exciton recombination.Conventional semiconductor theories based on free-carrier/many-body interband transition no longer valid. To establish optical spectrum model based on exciton-phonon interaction within an organic crystal.

Organic semiconductor emits light via Frenkel exciton recombination.Conventional semiconductor theories based on free-carrier/many-body interband transition no longer valid. To establish optical spectrum model based on exciton-phonon interaction within an organic crystal.

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HamiltonianHamiltonianHamiltonian

Hamiltonian established to include intra-molecular and inter-molecular electronic and vibronic interactions. A phonon cloud of several unit cells is used to represent exciton-phonon interaction. All excited states of the molecular crystal are solved and optical transition dipole moments computed between all states.Model similar to Refs: [1] M. Hoffmann and Z. G. Soos, Phys. Rev. B 66, 024305 (2002)[2]Vragovic, R. Scholz and M. Schreiber, Europhysics Letters,vol. 57 (2), pp. 288-294, 2002.

Hamiltonian established to include intra-molecular and inter-molecular electronic and vibronic interactions. A phonon cloud of several unit cells is used to represent exciton-phonon interaction. All excited states of the molecular crystal are solved and optical transition dipole moments computed between all states.Model similar to Refs: [1] M. Hoffmann and Z. G. Soos, Phys. Rev. B 66, 024305 (2002)[2]Vragovic, R. Scholz and M. Schreiber, Europhysics Letters,vol. 57 (2), pp. 288-294, 2002.

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Modeling ProceduresModeling ProceduresModeling Procedures

Although mechanisms involved in the Hamiltonian are complex, input parameters are few and fitting to experimental spectrum is easy. Typical input/adjustable parameters: exciton bandgap, molecular vibronic quanta, intra-molecular exciton-phonon interaction constant, and inter-molecular hopping parameter. Doped organic semiconductor may easily be modeled as combination of emission from the host and the dopant separately.

Although mechanisms involved in the Hamiltonian are complex, input parameters are few and fitting to experimental spectrum is easy. Typical input/adjustable parameters: exciton bandgap, molecular vibronic quanta, intra-molecular exciton-phonon interaction constant, and inter-molecular hopping parameter. Doped organic semiconductor may easily be modeled as combination of emission from the host and the dopant separately.

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NumericsNumericsNumerics

Numerically efficient: several minutes per spectrum. Integrated into APSYS-OLED option so that optical extraction may be calculated based on the spectrum. Bias and current injection dependent spectrum may be simulated to fine tune the color of the OLED.

Numerically efficient: several minutes per spectrum. Integrated into APSYS-OLED option so that optical extraction may be calculated based on the spectrum. Bias and current injection dependent spectrum may be simulated to fine tune the color of the OLED.

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Typical EL/Absorption SpectraTypical EL/Absorption SpectraTypical EL/Absorption Spectra

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Some Fitted EL SpectraSome Fitted EL SpectraSome Fitted EL Spectra

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EL Spectrum Model of Alq3:DCM EL Spectrum Model of Alq3:DCM EL Spectrum Model of Alq3:DCM

Applied electric field ranges from 1.E7 to 1.E8 V/m

Field=1.E7

Field=1.E8

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Contents Contents Contents

Treating organic semiconductor with quantum drift-diffusion model.Light extraction using 3D ray-tracing (non-microcavity model).Electroluminescent spectra modeling with Frenkel exciton. Inclusion of microcavity effects.An example of AMOLED.Triplet diffusion and WOLEDLow-voltage PIN structuresTandem OLED

Treating organic semiconductor with quantum drift-diffusion model.Light extraction using 3D ray-tracing (non-microcavity model).Electroluminescent spectra modeling with Frenkel exciton. Inclusion of microcavity effects.An example of AMOLED.Triplet diffusion and WOLEDLow-voltage PIN structuresTandem OLED

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Theoretical BasisTheoretical BasisTheoretical BasisSelf-consistent calculation of material spontaneous emission rate based on rigorous Frenkel exciton theories coupled with 2/3D simulation of current injection from the Crosslight APSYS drift-diffusion solver.Coupling of spontaneous emission with microcavity modes based on theory of C. H. Henry (1986) [1].Henry’s theory has been extended from waveguide to RC-OLED by proper accounting of mode densities in a quasi-2D/3D emission situation.Photon recycling effects taken into account by accurate determination of photon power density inside the RCLED and self-consistent model of material absorption of the active layers in OLED.

Self-consistent calculation of material spontaneous emission rate based on rigorous Frenkel exciton theories coupled with 2/3D simulation of current injection from the Crosslight APSYS drift-diffusion solver.Coupling of spontaneous emission with microcavity modes based on theory of C. H. Henry (1986) [1].Henry’s theory has been extended from waveguide to RC-OLED by proper accounting of mode densities in a quasi-2D/3D emission situation.Photon recycling effects taken into account by accurate determination of photon power density inside the RCLED and self-consistent model of material absorption of the active layers in OLED.

[1] C. H. Henry, "Theory of spontaneous emission noise

in open resonators and its application to lasers and optical amplifiers,"

J. Lightwave Technol., vol. LT-4, pp. 288--297, March 1986.

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An Example of RC-OLED An Example of RCAn Example of RC--OLED OLED

Structure according to C. Qiu, et. al. IEEE Trans. on Elec. Device, vol. 51,2004 p. 1207.

Strong microcavity effects reported for Type A.

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Simulated band diagramSimulated band diagramSimulated band diagram

LiF thin layer treated as modified Alq3 layer.

Contact layers are included in optical simulation but ignored in electrical simulation for simplicity.

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Leakage currentsLeakage currentsLeakage currents

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PerformancePerformancePerformance

Emission source IQE

Emission power vs. current Extraction

efficiency

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Spectrum vs. angleSpectrum vs. angleSpectrum vs. angle

Color changes with angle due to microcavity effect

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Power vs. anglePower vs. anglePower vs. angle

Reasonable agreement with Type A experimental data

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SpectrumSpectrumSpectrum

experiment

Narrower spectrum means resonance

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Can be better?Can be better?Can be better?

Index profile

Scaled power profile

Main emission souce

Device may be optimized if position of emission source is adjusted to the peak of power.

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Contents Contents Contents

Treating organic semiconductor with quantum drift-diffusion model.Light extraction using 3D ray-tracing (non-microcavity model).Electroluminescent spectra modeling with Frenkel exciton. Inclusion of microcavity effects.Application for AMOLED.Triplet diffusion and WOLEDLow-voltage PIN structuresTandem OLED.

Treating organic semiconductor with quantum drift-diffusion model.Light extraction using 3D ray-tracing (non-microcavity model).Electroluminescent spectra modeling with Frenkel exciton. Inclusion of microcavity effects.Application for AMOLED.Triplet diffusion and WOLEDLow-voltage PIN structuresTandem OLED.

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AMOLED StructureAMOLED StructureAMOLED Structure

(a) Schematic of top-emitting OLED; (b) Photos of Left=top-emitting, right=bottom emitting OLED.

(a) A more recent top-emitting OLED; (b) conventional bottom-emitting OLED.

Structure taken from Yang et. al, APL 87, 143507 (2005). We shall simulate top-emitting OLED here.

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Band alignmentBand alignmentBand alignment

LiF/Al/Ag

Alq3

a-NPDm-MTDATA

Green lines=Quasi-Fermi levels

Band diagram at equilibrium.

At a bias of 10 volts.

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Radiative emitting sourceRadiative Radiative emitting sourceemitting source

Remark: simulation shows that only under some band alignment conditions will the emitting source be located at Alq3/alpha-NPD interface.

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Simulated I-V versus experimentSimulated ISimulated I--V versus experimentV versus experiment

Remark: by adjusting carrier lifetime, mobility, band alignment and metal work functions, reasonable agreement can be achieved over a few decades of current magnitude at higher voltage bias.

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Simulated microcavity spectrumSimulated Simulated microcavity microcavity spectrumspectrum

Reasonable agreement with peak position and line width.

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Simulated luminanceSimulated luminanceSimulated luminance

Agreement on luminance calculation is reasonable considering no fitting effort is made after I-V curve is calibrated. We have a good IQE/extraction model for RC-OLED.

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Contents Contents Contents Treating organic semiconductor with quantum drift-diffusion model.Light extraction using 3D ray-tracing (non-microcavity model).Electroluminescent spectra modeling with Frenkel exciton. Inclusion of microcavity effects.Application for AMOLED.Triplet diffusion and WOLEDLow-voltage PIN structuresTandem OLED

Treating organic semiconductor with quantum drift-diffusion model.Light extraction using 3D ray-tracing (non-microcavity model).Electroluminescent spectra modeling with Frenkel exciton. Inclusion of microcavity effects.Application for AMOLED.Triplet diffusion and WOLEDLow-voltage PIN structuresTandem OLED

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Making use of tripletsMaking use of tripletsMaking use of triplets

LUMO

HOMO

_

++ -

Electron-hole pair(exciton)

4 types of excitons

Singlets may recombine to emit light

Triplets are normally wasted unless harvested by phosphorescent dopants

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A WOLED using both singlets and triplets A WOLED using both A WOLED using both singlets singlets and triplets and triplets

Y. Sun, et. al. "Management of singlet and triplet excitons for efficient white organic light-emitting devices,” Nature, Vol 440,13 April 2006, p. 908

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Our model Our model Our model

Basic exciton diffusion equations for both singlet: and triplets [1]:

quenching_terms

Exciton quenching may include bulk/interface quenching and triplet-triplet biexciton quenching [2]

[1]B. Ruhstaller, et.al.,“Simulating Electronic and Optical Processes in Multilayer Organic Light-Emitting Devices,” IEEE J. SEL. TOPICS IN QUANTUM ELECTRONICS, VOL. 9,2003,p. 723.

[2] M. A. BALDO, et.al., "Transient analysis of organic electrophosphorescence. II. Transient analysis of triplet-triplet annihilation,"p. 10 967 PRB vol. 62, 2000

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Some model detailsSome model detailsSome model details

Biexciton quenching rate takes the form k_TT*S_T*S_T where S_T is triplet exciton density.Dopant dependent exciton lifetimes for different layers are adjusted to tune the color of the EL spectrum.Linear field dependent EL energy transfer from one dopant to another. This is used to model energy transfer from green dopant to red dopant.

Biexciton quenching rate takes the form k_TT*S_T*S_T where S_T is triplet exciton density.Dopant dependent exciton lifetimes for different layers are adjusted to tune the color of the EL spectrum.Linear field dependent EL energy transfer from one dopant to another. This is used to model energy transfer from green dopant to red dopant.

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Band alignment and carrier profileBand alignment and carrier profileBand alignment and carrier profile

Band diagram at 10 V

electrons

holes

NPDDoped CBP

BPhen

Carrier profiles are sensitive to band alignments

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Simulated I-V and P-ISimulated ISimulated I--V and PV and P--II

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Exciton profilesExciton Exciton profilesprofiles

Remark: Tripelets have a much longer diffusion length (46nm) than singlets (1nm).

Thermionic emission heterojunction model for excitons at work.

Triplet harvesting causes depletion of excitons in doped layers

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Triplet behaviorTriplet behaviorTriplet behavior

Exciton profile probed by EQE measurement by Y. Sun, et. al. , Nature, Vol 440,13 April 2006, p. 908

Simulated triplet profile consistent with experimental data reported in literature.

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Exciton dipole profileExciton Exciton dipole profiledipole profile

Blue

Red

Green

Remark: exciton radiation happens mainly in doped layers.

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IQE behaviorIQE behaviorIQE behavior

Y. Sun, et. al. , Nature, Vol 440,13 April 2006, p. 908

Similar physical trends are obtained for quantum efficiency. Better fit may be obtained if more quenching terms are included.

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Stable white color obtainedStable white color obtainedStable white color obtained

voltage

Spectrum obtained at 4, 8, 12 and 16 volts of bias.

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Normalized EL spectrumNormalized EL spectrumNormalized EL spectrum

Y. Sun, et. al. , Nature, Vol 440,13 April 2006, p. 908

Based on previous experiments from the same authors, exciton lifetimes were set at 1-100 of micro-seconds and adjusted to match experimental spectrum.

Reasonable agreement with experiment.

Increasing volt=4,8,12 &16 V

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Biexciton quenchingBiexciton Biexciton quenchingquenching

As expected triplet-triplet quenching plays an important role for IQE

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Triplet dopant-dopant energy tranferTriplet Triplet dopantdopant--dopant dopant energy energy tranfertranfer

Green to red energy transfer (loss) were proposed: Y. Sun, et. al. , Nature, Vol440,13 April 2006, p. 908

V

With field dep. green to red transfer

Without green to red transfer

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Summary on WOLED simulationSummary on WOLED simulationSummary on WOLED simulation

Triplet profile determined by band alignment.White color stability relies on multiple factors such as single/triplet ratio, field dependent exciton lifetime, triplet-triplet quenching and dopantto dopant energy transfer. Simulation may help gain insight into and help design better WOLED.

Triplet profile determined by band alignment.White color stability relies on multiple factors such as single/triplet ratio, field dependent exciton lifetime, triplet-triplet quenching and dopantto dopant energy transfer. Simulation may help gain insight into and help design better WOLED.

Based on simulation and analysis using APSYS, we find

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Contents Contents Contents Treating organic semiconductor with quantum drift-diffusion model.Light extraction using 3D ray-tracing (non-microcavity model).Electroluminescent spectra modeling with Frenkel exciton. Inclusion of microcavity effects.Application for AMOLED.Triplet diffusion and WOLEDLow-voltage PIN structuresTandem OLED

Treating organic semiconductor with quantum drift-diffusion model.Light extraction using 3D ray-tracing (non-microcavity model).Electroluminescent spectra modeling with Frenkel exciton. Inclusion of microcavity effects.Application for AMOLED.Triplet diffusion and WOLEDLow-voltage PIN structuresTandem OLED

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Layer Structure & ModelLayer Structure & ModelLayer Structure & Model

Based on J. Huang & al., “Low-voltage organic electroluminescent devices using pin structures”, Appl. Phys. Lett., Vol. 80 No.1, 7 Jan. 2002

• ITO/glass substrate• p-doped HTL (100 nm) : m-MTDATA:F4-TCNQ (2% mol.) • TPD (5 nm): carrier confinement• Alq3 (20 nm) : active region @ 530 nm• Bphen (10 nm) : carrier confinement• n+-doped ETL (30 nm) : Bphen:Li (1:1 ratio) • LiF (1 nm)/Al contact• Contacts defined as Schottky• Energy levels of electrical dopants included to account for incomplete ionization• Quantum tunneling defined for contact and TPD regions due to band alignment• RCLED model used

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Band diagram @ 2V biasBand diagram @ 2V biasBand diagram @ 2V bias

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Simulated I-V versus experimentSimulated ISimulated I--V versus experimentV versus experiment

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Simulated L-V versus experimentSimulated LSimulated L--V versus experimentV versus experiment

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Internal Quantum EfficiencyInternal Quantum EfficiencyInternal Quantum Efficiency

Note: Efficiency limited to 25% since there is no triplet harvesting.

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CommentsCommentsComments

• Very reasonable fit to experiment over 4 decades of current values and 6 decades of luminance

• Low turn-on voltage, close to thermodynamic limit of Alq3

• High efficiency limited by singlet-only design. Can be improved by triplet harvesting as in previous WOLED design

• Efficiency fit can be improved by adding quenching terms which are important at higher bias values

• PIN design lends itself well to solar cell applications

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Contents Contents Contents Treating organic semiconductor with quantum drift-diffusion model.Light extraction using 3D ray-tracing (non-microcavity model).Electroluminescent spectra modeling with Frenkel exciton. Inclusion of microcavity effects.Application for AMOLED.Triplet diffusion and WOLEDLow-voltage PIN structuresTandem OLED

Treating organic semiconductor with quantum drift-diffusion model.Light extraction using 3D ray-tracing (non-microcavity model).Electroluminescent spectra modeling with Frenkel exciton. Inclusion of microcavity effects.Application for AMOLED.Triplet diffusion and WOLEDLow-voltage PIN structuresTandem OLED

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Layer structure of tandem OLEDLayer structure of tandem OLEDLayer structure of tandem OLED

Based on Liao, Klubek, and Tang, "High-efficiency tandem organic light-emitting diodes,“ Appl. Phys. Lett., Vol. 84, No. 2, 12 January 2004, p.167

Model requirements: treatment of n-type and p-type dopings, tunnel junction, and microcavity effects due to multiple colors with dipole source distributed in multiple locations.

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Tunnel Junction for OLEDTunnel Junction for OLEDTunnel Junction for OLED

a) Band diagram at 4 volt;

b) at 14.2 volt;

c) Exciton distribution at 14.2 volt.Tunneling current

a)

b)

c)Green Red

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Simulated EL spectrumSimulated EL spectrumSimulated EL spectrum

Optical phase in microcavity model, band alignment and mobility were found to affect the color and intensity of the EL spectra. Reason results were obtained after careful choice of parameters.

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Simulated IV curvesSimulated IV curvesSimulated IV curves

Experimental findings: Device A with tunnel junction (TJ), V=14.2 V at 20 mA/cm^2; Device B, V=16 V at 20 mA/cm^2 .

Electrical doping and TJ reduces operating voltage by about 2 volts.

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More tandem structuresMore tandem structuresMore tandem structures

Based on Liao, Klubek, and Tang, "High-efficiency tandem organic light-emitting diodes,“ Appl. Phys. Lett., Vol. 84, No. 2, 12 January 2004, p.167

Model requirements: treatment of n-type and p-type dopings, tunnel junction. Microcavity effects neglected for simplicity here.

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Band diagrams at 20 mA/cm^2Band diagrams at 20 Band diagrams at 20 mAmA/cm^2/cm^2

Device E

Device F

Device G

Device H

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Exciton at 20 mA/cm^2ExcitonExciton at 20 at 20 mAmA/cm^2/cm^2

Device E

Device F

Device G

Device H

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Simulated EL / IV vs experimentSimulated EL / IV Simulated EL / IV vs vs experimentexperiment

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ConclusionsConclusionsConclusions

A rather comprehensive set of modules suitable for OLED and WOLED simulation implemented in APSYS for both electrical and optical modeling.Each module may be used independently or in a fully integrated manner. All critical modules have been verified by experiments.

A rather comprehensive set of modules suitable for OLED and WOLED simulation implemented in APSYS for both electrical and optical modeling.Each module may be used independently or in a fully integrated manner. All critical modules have been verified by experiments.