Eigenmode Analysis of Vertical-Cavity Lasershiptmair/org/macsinet/slides/...• Semiconductor Stack...
Transcript of Eigenmode Analysis of Vertical-Cavity Lasershiptmair/org/macsinet/slides/...• Semiconductor Stack...
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ZürichIntegrated Systems LaboratoryOptoelectronics Modeling Group Zürich
Eigenmode Analysis ofVertical-Cavity Lasers
Andreas Witzig, Matthias Streiff, Wolfgang Fichtner
Integrated Systems LaboratorySwiss Federal Institute of Technology,
ETH Zurich Switzerland
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ZürichIntegrated Systems LaboratoryOptoelectronics Modeling Group Zürich
Overview
• Motivation
• Solution of the Optical Modesin Laser Cavities➜ Discretization of Vectorial Helmholtz Equation
by linear and quadratic Nédélec Elements
➜ Solution of the Algebraic Eigenvalue Problemby Jacobi-Davidson QZ Algorithm
• Spectral Portrait➜ Identification of Optical Eigenmodes
➜ Target Values
➜ Tracking of Optical Modes
• Computational Effort➜ Linear vs. Quadratic Edge-Elements
• Conclusion / Outlook
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ZürichIntegrated Systems LaboratoryOptoelectronics Modeling Group Zürich
d / 2
λ-cavity
15 Bragg pairs
20 Bragg pairs
GaAs Substrate
metal contact
Si3N4 isolation
ApertureMetal Contact
Si3N4 isolation25 Layer Pairs
λ-Cavity, Active Region
35 Layer Pairs
Vertical-Cavity Surface-Emitting Lasers (VCSELs)
• Application➜ Promising Light Source for Optical
Communication Systems
➜ Semiconductor Laser (PiN-Diode)
➜ Light Generation by RadiativeRecombination of Electrons and Holes
➜ Optical Resonator (Layered Medium)
• Challenge➜ Calculate Optical Eigenmodes
➜ Calculate Resonance Frequency
➜ Simulation of Opto-Electro-ThermalDevice Characteristics
10µm
Ligh
t Out
put
Standing Wave
Metal Contact
GaAs Substrate
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ZürichIntegrated Systems LaboratoryOptoelectronics Modeling Group Zürich
Problem Formulation:
Calculation of Optical Eigenmodes
➜ Frequency-Domain Solution ofHomogeneous Maxwell ’s Equations(=Helmholtz Equations)
➜ Radiation Boundary Condition
➜ Non-Hermitian ComplexGeneralized Eigenproblem
➜ Real Part of Eigenvalue= Resonance Frequency(Free-Space Resonance Wavelength λ)
➜ Imaginary Part of Eigenvalue= Field Decay Constant(related to Photon Lifetime τph)
Optical Field
20µm
+ Radiation Boundary Condition
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ZürichIntegrated Systems LaboratoryOptoelectronics Modeling Group Zürich
Temperature
Optical Field
20µm
Peak Change in
by ≈ 2%Refractive Index
Application:
Coupled Opto-Electro-ThermalVCSEL Simulation
Refractive Index Depends on Temperatureand Carrier Density
➜ Need Volume Discretization (Finite-Ele-ment Type, Full-Vectorial)
Solution of Optical Cavity Problem is Iteratedwith Electronic Equations
➜ Need a Fast Solver (in Compensation,allow to use a lot of memory)
Current Density
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ZürichIntegrated Systems LaboratoryOptoelectronics Modeling Group Zürich
Discretization
• Discretization by N édélec Elements➜ Unstructured Grid (typ. order 500 ’000)
➜ Full-Vectorial Complex Optical Field
➜ "curl"-Conforming Discretization
➜ Linear and Quadratic Elements
• Solution in 2D or "2.5D"➜ Body-of-Revolution
Fourier Series Expansion in φ-Direction
ρ
edgesnodes
ϕρ
z
z
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ZürichIntegrated Systems LaboratoryOptoelectronics Modeling Group Zürich
r�
�[�r]�1
� r ��
�� k20["r]� = 0:
["r] =2
4� 0 0
0 � 0
0 0 �
�1
35[�r] =
24
� 0 0
0 � 0
0 0 ��1
35
Solution ofThe Open Cavity Problem
• Radiation to In finity➜ Essential Result of the Simulation
(Directly proportional to Photon Life Time,Laser Threshold, Filter Linewidth, etc)
• Perfectly Matched Layer (PML) Concept➜ Arti ficial Material for Absorption
➜ Outside of PML, use Dirichlet BoundaryConditions.
Very good Results, Problem with Layered Media PML
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Solution ofAlgebraic Eigenproblem
• Jacobi-Davidson QZ Algorithm➜ Low-Dim. Search Subspace (e.g. order 10)
➜ High-Order Correction Equation (BiCGstab)
➜ Preconditioner: Matrix Inversion,using Direct Solver PARDISO
• In Practice...➜ Find a few inner Eigenmodes (1..5)
➜ Need Good Target Value (know λ within 0.1%)
➜ Need a Lot of Memory for Computation (6GB)
➜ Quick Method to Find Eigenvalue (20min)
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101
102
103
104
105
106
10−10
10−8
10−6
10−4
10−2
rela
tive
err
or
matrix order
linear
quadratic
Reference I:Metal Box Resonator
• Analytical Solution Known
• Comparison of Linear and QuadraticElements
• Symmetry similar to VCSEL(Body-of-Revolution, Fourier Expansion of 3DFields)
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Reference II:Dielectric Pill
Resonator
• Cylinder with n = 5.9in Vacuum
• Includes Radiation➜ Good Test for Absorbing
Boundaries
➜ Non-Hermitian Matrices, Com-plex Eigenvalue
• Symmetry similar to VCSEL➜ Body-of-Revolution, Fourier
Expansion
Real Part of the Electric Field
m = 1 m = 0
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2676 2680 2684 2688 2692
54
55
56
57
linear
quadratic
1
2
31
23Reference [1]
Resonance Wavelength [nm]
Ph
oto
n L
ifet
ime
[ps]
Reference II:Dielectric Pill
Resonator
• Accuracy Dependent onMesh Refinement:
• 1: 10 Cells/λ (8x8 in Pill)linear: order 9’000quad.: order 36’000
• 2: 20 Cells/λ (16x16 in Pill)linear: order 35’000quad.: order 140’000
• 2: 40 Cells/λ (32x32 in Pill)linear: order 139’000quad.: order 556’000
[1] Tsuji et. al. "On the Complex Resonant Frequency of Open Dielectric Resonators",IEEE Trans. on Microwave Theory and Techniques, Vol. 31, No. 5 May 1983
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ZürichIntegrated Systems LaboratoryOptoelectronics Modeling Group Zürich
Example I:Airpost VCSEL
• Semiconductor Stack➜ Low Refractive Index Contrast
➜ Many Layers (30..40)
• How to Find Fundamentaland Higher Order Modes?➜ Spectral Portrait
Fundamental Mode
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ZürichIntegrated Systems LaboratoryOptoelectronics Modeling Group Zürich
730 740 750Resonance Wavelength [nm]
0
4
8
12
16
20
Pho
ton
Life
Tim
e [p
s]
m=0m=1m=2m=3m=4m=5
Example I:Airpost VCSEL
• Spectral Portrait➜ Mode Selection??
➜ Mode with Smallest ImaginaryPart and Large Overlap withActive Region...
• Note: Different ExpansionNumber m
Spectral Portrait
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ZürichIntegrated Systems LaboratoryOptoelectronics Modeling Group Zürich
Example I:Airpost VCSEL
• Spectral Portrait➜ Mode Selection??
• Mode with SmallestImaginary Part andLarge Overlap withActive Region...
Spectral Portrait
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ZürichIntegrated Systems LaboratoryOptoelectronics Modeling Group Zürich
730 740 750Resonance Wavelength [nm]
0
4
8
12
16
20P
hoto
n Li
fe T
ime
[ps]
Spectral Portrait
Inve
rse
Ph
oto
n L
ife
Tim
e [1
/ps]
Resonance Wavelength [nm]
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ZürichIntegrated Systems LaboratoryOptoelectronics Modeling Group Zürich
7.56 7.57 7.58 7.59x 10
−7
0
500
1000
1500
2000
2500
lambda
A
B C
D E
alph
a
8
9
11
11
11 9
9
6
6
6
7
4
4
4
9
4
3
3
3
7
4
2
1
5
2
3
4
4
2
2
5 3
3 3
4
2
4
4
5
4
5
5 4
3
3
4 3
4
3
3
4
3
2
2
3
6
5
5
4
4
4
4
6
4
4
3
6
3
7
7
4
4
4
4
3
2
2
3
A
BC
D E
2.5
2.0
1.5
1.0
0.5
0
744.6 744.8 745.0 745.2
Resonance Wavelength [nm]
How to Find Complete Spectrum?
• "Brute Force": Scan Target Value➜ Faster Convergence for Better Target Value
(Number of Jacobi Correction Equations Solved)
➜ New Preconditioner for Each Eigenvalue?
• Repeated Solution of Perturbed Problem➜ Track Eigenvalue
Inve
rse
Ph
oto
n L
ife
Tim
e [1
/ps]
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ZürichIntegrated Systems LaboratoryOptoelectronics Modeling Group Zürich
Example II:Tunable Filter
• Air-Gap Mirrors➜ High Refractive Index Contrast
➜ Need Only 3..4 Layers
• Fabrication:➜ Selectively Ethching Sacrifice Layers
➜ Air Bridges Hold the Layers
• Concept Allows Tuning
• Filter: Incident Light from Top➜ Resonances in the Cavity Cause Sharp
Spectral Dip in the Reflected Beam
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ZürichIntegrated Systems LaboratoryOptoelectronics Modeling Group Zürich
Example II:Tunable Filter
• Charge Center Layers to ControlAir-Gap Distance
• Critical Design Issue: Bending of theLayers
• Sensitivity Analysis by Simulation
Tuning
Bend
< 20nm
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1..20nm
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1580 1585 1590 1595 1600 1605
1500
1550
1600
1650
1700
1750al
ph
a [1
/m]
lambda [nm]
20 nm
0 nm
Convex Mirrors
➜ Trajectory for 0nm..20nm bend
➜ Mode Relations are Preserved
➜ Better Confinement (Smaller Decay Const.)
➜ Shift to Smaller Resonance Wavelengths
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1580 1590 1600 1610 16201000
1500
2000
2500
3000
3500
alp
ha
[1/m
]
lambda [nm]
20 nm
0 nm
previous slide
Concave Mirrors
➜ Trajectory for 0nm..20nm bend
➜ Resonances
➜ Shift to Higher Resonance Wavelengths
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ZürichIntegrated Systems LaboratoryOptoelectronics Modeling Group Zürich
Example III:VCSEL Simulation
• Separation between Longitudinal andTransverse Direction Impossible➜ Diffraction at Oxide Confinement or Mesa
Structure
➜ Remedy for Rotationally Symmetric Struc-tures: Expand by Fourier Series (Body-of-Revolution)
• Solution of Large Eigenvalue Problem➜ Finite-Element Discretization
➜ Need to Resolve Bragg Mirrors
➜ Jacobi-Davidson Method
20µm
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ZürichIntegrated Systems LaboratoryOptoelectronics Modeling Group ZürichZürichIntegrated Systems LaboratoryOptoelectronics Modeling Group Zürich
1.
2.3.
4.
Zoom-In:
• Standing Waves➜ High Field Intensities
in the Centre
• Traveling Waves1.Laser Output
2.Bragg Losses
3.Radiating Waves
4.Guided Surface Waves
• Diffraction at theOxide Confinement➜ Important to Calculate Pho-
ton Lifetime and ThresholdCurrent
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Typical Simulation Tasks
• Device Optimization➜ Mode Discrimination➜ High Output Power➜ Good Fiber Coupling
• Design of Top Contact➜ Aperture Diameter➜ Material
• However...➜ Results Questionable for
Optics-Only Simulation➜ Need To Simulate Fully-Coupled
Opto-Electro-Thermal Physics
2µm
3µm
4µm
5µm
Aperture
0.6 1.81.2 2.4
Distance from Centre [µm]
Op
tica
l Po
wer
Den
sity
[a.
u.]
3.0 3.6 4.20.0
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1 2 3 4 5 6 70
0.02
0.04
0.06
0.08
0.1
0.12
0.14
dielectric aperture radius [um]
(QH
E11
−QH
E21
)/Q
HE
11
Simulation Results (Optical): Mode DiscriminationFurukawa Electric 850 nm VCSEL with oxide aperture:Optimal single-mode performance (cold cavity)
➜ Adjust dielectric aperture to obtain maximum separation betweenfundamental HE11 and next higher order HE21 optical mode.
HE11 (m=1)
HE21 (m=2)
1 2 3 4 5 6 70
2
4
6
8
10
12
dielectric aperture radius [um]
mo
dal
loss
[1/
cm]
total loss HE11top radiation HE11total loss HE21top radiation HE21
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Electronics Optics
n, p: Electron/Hole DensityV: Electrostatic PotentialT: Lattice TemperatureG, R: Optical Gain/Recombinationf: Lasing FrequencyA: Optical Wave AmplitudeS: PhotonNumberK: Quantum Mechanical Wavefunction
Poisson EquationV, n, p, T, K
Quantum Carrier TreatmentK,n,p,V
Continuity Equationn, p, V, G, R, S, A, T
Temperature EquationT, V, n, p
Complex Wave EquationA, n, p, f, G
Photon Rate EquationS, G, R, f, n, p
Gain ModelG, n, p, f, T
Self-Consistent Solution
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Example III:Opto-Electro-Thermal
VCSEL Simulation
• Separate meshes and interpolateelectro-thermal: ~ 10’000 FEoptical: ~ 200’000 FE
• Newton scheme to solve coupled non-linear set of electro-thermal equations.Parallelised direct solver (PARDISO) tosolve linear equations in Newtonscheme
• Photon Rate Equation Accounts forOptics
• Photon Life Time (Imaginary Part ofEigenvalue) as a Variable in the Equa-tion
r � (�r�) = �q�p� n +N+D �N�
A�
�r � S = H + ctot@tT
r � jn = q (R + @tn)
�r � jp = q (R + @tp)
S = ��thrT
jn = �q (�nnr��Dnrn+ �nnPnrT )
jp = �q (�ppr�+Dprp+ �ppPprT )
ddt
S�(t) = (G� � L�)S�(t) +Rsp
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2.0x
1e2
2.0x
1e4
2.0x
1e3
[A/c
m2]
300
350
400
[K]
PML
PML
PM
L
contact
top DBR
bottom DBR
GaAs substrate
air
oxide confinement
Simulation Results (Coupled)
Electro-thermo-optical simulation:
➜ Distribution of current density
➜ temperature and optical intensity at 16.3 mA.
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current [mA]0 5 10 15 20
op
tica
l po
wer
[m
W]
0
5
10
15
0.0
1.0
2.0
ano
de
volt
age
[V]
anode voltageoptical power
880
885
900
890
895
300
310
320
330
340
350
0 5 10 15 20
wav
elen
gth
[n
m]
aver
age
cavi
ty t
emp
erat
ure
[K
]
current [mA]
average cavity temperaturewavelength
Simulation Results (Coupled)Electro-thermo-optical simulation:
➜ I/P_opt and I/V curve
➜ Wavelength tuning of HE11 mode
➜ average cavity temperature versus laser current.
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0 1 2 3 4 5radius [um]
op
tica
l in
ten
sity
(a.
u.)
0 [mA]5 [mA]
15 [mA]10 [mA]
20 [mA]
0 5 10 15radius [um]
loca
l op
tica
l mat
eria
l gai
n [
1/cm
]
2000
-1000
-500
0
500
1000
15001 [mA]3 [mA]7 [mA]
Simulation Results (Coupled)Electro-thermo-optical simulation:
➜ Normalised optical intensity of HE11 mode in active region versus current (thermal lensing)
➜ Optical material gain in active region versus current (spatial hole burning).
![Page 31: Eigenmode Analysis of Vertical-Cavity Lasershiptmair/org/macsinet/slides/...• Semiconductor Stack Low Refractive Index Contrast Many Layers (30..40) • How to Find Fundamental and](https://reader036.fdocuments.in/reader036/viewer/2022071403/60f76a0687e26c2a9d43bee3/html5/thumbnails/31.jpg)
ZürichIntegrated Systems LaboratoryOptoelectronics Modeling Group Zürich
All benchmarks performed on Compaq AlphaServer ES45 1250 MHz (1 CPU)
Numerical Performance
Simulation Results (Optical):
• # optical vertices: 90’000
• job size: ~ 2 GBytes
• Total CPU Time Usage: ~3 m
Simulation Results (Coupled):
• # optical vertices: 90’000# electro-thermal vertices: 7’729
• job size: ~ 2.2 GBytes
• Total CPU Time Usage: ~8 h➜ 98 bias points➜ run time without self-consistent
optics: ~5 h
![Page 32: Eigenmode Analysis of Vertical-Cavity Lasershiptmair/org/macsinet/slides/...• Semiconductor Stack Low Refractive Index Contrast Many Layers (30..40) • How to Find Fundamental and](https://reader036.fdocuments.in/reader036/viewer/2022071403/60f76a0687e26c2a9d43bee3/html5/thumbnails/32.jpg)
ZürichIntegrated Systems LaboratoryOptoelectronics Modeling Group Zürich
Summary
• Solve Helmholtz Equation➜ Open Resonator Requires Absorbing Boundaries
➜ Non-Hermitian Problem, Complex Eigenvalue
➜ Discretization: Linear vs. Quadratic
• Spectral Portrait➜ Difficult to Find Lasing Modes Automatically
➜ Track Modes for Perturbed Problem
• Applications➜ Tunable Air-Gap Filter
➜ Coupled Opto-Electro-Thermal VCSEL Simulation
![Page 33: Eigenmode Analysis of Vertical-Cavity Lasershiptmair/org/macsinet/slides/...• Semiconductor Stack Low Refractive Index Contrast Many Layers (30..40) • How to Find Fundamental and](https://reader036.fdocuments.in/reader036/viewer/2022071403/60f76a0687e26c2a9d43bee3/html5/thumbnails/33.jpg)
ZürichIntegrated Systems LaboratoryOptoelectronics Modeling Group Zürich
Conclusions / Outlook
• Eigenmode Analysis of Microcavity Lasers➜ Perfectly Matched Layer (PML) Boundary Condi-
tion is a Good Choice for Absorbing Boundary
➜ Need Full-Wave Solution to Account for Diffrac-tion Losses and Calculate Photon Life Time Accu-rately
➜ Trade-Off Between Accuracy and Problem Size
• Improve Preconditioner➜ Possibility: First Order Elements for Precondi-
tioner and Second Order Elements for Jacobi Cor-rection Equation (Requires Hierarchical FiniteElements)
![Page 34: Eigenmode Analysis of Vertical-Cavity Lasershiptmair/org/macsinet/slides/...• Semiconductor Stack Low Refractive Index Contrast Many Layers (30..40) • How to Find Fundamental and](https://reader036.fdocuments.in/reader036/viewer/2022071403/60f76a0687e26c2a9d43bee3/html5/thumbnails/34.jpg)
ZürichIntegrated Systems LaboratoryOptoelectronics Modeling Group Zürich
Acknowledgements
• Oscar Chinellato, Peter ArbenzInstitute of Scientific Computing, ETH Zurich
University of Kassel
• Avalon PhotonicsHardware Partner
• ISE Integrated Systems EngineeringSoftware Partner
• Swiss Funding Agency➜ Commission for Technology and Innovation (CTI)
➜ TOP NANO21 Programme.