EEC 116 Lecture #11: Implementation Strategiesramirtha/EEC116/F11/lecture11.pdf• Power supply:...
Transcript of EEC 116 Lecture #11: Implementation Strategiesramirtha/EEC116/F11/lecture11.pdf• Power supply:...
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EEC 116 Lecture #11:Implementation Strategies
Rajeevan Amirtharajah Bevan BaasZhiyi Yu
University of California, Davis
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Amirtharajah, EEC 116 Fall 2011 2
Announcements
• Lab 5 due Wednesday, Nov. 23
• Homework 5 due Monday, Nov. 28
• Lab 6 due Friday, Dec. 2
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Amirtharajah, EEC 116 Fall 2011 3
Outline
• Review and Finish: Memories
• Implementation Strategies: Rabaey Ch. 1, 8 (Kang & Leblebici, Ch. 1)
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Amirtharajah, EEC 116 Fall 2011 4
Abstraction of Design Complexity
• Design complexity– Typically tens of transistors in analog circuits
• Each is normally hand crafted along with placement and wiring
– Hundreds of transistors• Each can be hand crafted
– Thousands to 100s of thousands of transistors• Must find regularity in structure and exploit it (re-use cells)• Ex: memory
– Millions to billions of transistors• Must find high-level regularity in structure and exploit it (re-
use modules and subsystems)• Ex: System on Chip (SOC)
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Amirtharajah, EEC 116 Fall 2011 5
Design Abstraction Levels
n+n+S
GD
+
DEVICE
CIRCUIT
GATE
MODULE
SYSTEM
FUNCTIONAL UNIT, or
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Amirtharajah, EEC 116 Fall 2011 6
Abstraction of Design Complexity
• Levels
– Device
– Circuit
– Gate
– Module or functional unit (e.g., adder, memory, etc.)
– Sub-system (e.g., processor, display driver, network interface, etc.)
• Methods to abstract complexity
– Sophisticated Computer-Aided-Design (CAD) tools
– Standard cell libraries
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Amirtharajah, EEC 116 Fall 2011 7
Hierarchical Abstraction
• Example: While designing at the gate level, we do not consider what is inside each gate
AND
AND
AND
OR
OR Carry-Out
AC
AB
BC
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Amirtharajah, EEC 116 Fall 2011 8
Why Learn About Circuits and Layout Then?
• Best designers can:
– Build model abstractions
– Understand limitations of models• Wire or interconnect performance• Changes with technology scaling
• Abstractions limit maximum attainable performance and energy-efficiency
– Multi-disciplinary view needed
• Troubleshooting and debugging
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Amirtharajah, EEC 116 Fall 2011 9
Design Aspects that “Defy Hierarchy”
• Clock distribution
– Timing skew
• Power distribution
– Sufficient current handling
– Adequate noise suppression
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Amirtharajah, EEC 116 Fall 2011 10
Full Custom
• All transistors and interconnect drawn by hand
• Full control over sizing and layout
• Highest area density and higher performance
• Longest time to design “maturity”
[figure from S. Hauck]
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Amirtharajah, EEC 116 Fall 2011 11
Full Custom Design Example
• Multiplier Chip
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Amirtharajah, EEC 116 Fall 2011 12
Standard Cell
• Constant-height cells
• Regular “pin”locations
• Cells represent gates, latches, flip-flops
• Placed and routed by software
[figure from S. Hauck]
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Amirtharajah, EEC 116 Fall 2011 13
Standard Cell
• Channels for routing only in older technologies (not necessary with modern processes with many levels of interconnect)
[figure from S. Hauck]
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Amirtharajah, EEC 116 Fall 2011 14
Standard Cell — Example
[Brodersen92]
• Application-Specific Integrated Circuit (ASIC)
• Hardwired combination of standard cells implements a fixed logic function or FSM (e.g., video codec)
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Amirtharajah, EEC 116 Fall 2011 15
Combination Standard Cell and Full Custom
[figure from S. Hauck]
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Amirtharajah, EEC 116 Fall 2011 16
“Soft” MacroModules
Synopsys DesignCompilerSource: Digital Integrated Circuits, 2nd ©
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Amirtharajah, EEC 116 Fall 2011 17
Gate Array
• Polysilicon and diffusion are the same for all designs
• Metal layers customized for particular chips
n‐type diffusion
polysilicon
p‐type diffusion
PMOS transistor
NMOS transistor
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Amirtharajah, EEC 116 Fall 2011 18
Unprogrammed Gate Array
Isolation Provided
by Spacing
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Amirtharajah, EEC 116 Fall 2011 19
Programmed Gate Array
• Metal connections made to create particular function
• What logic gate is this?
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Amirtharajah, EEC 116 Fall 2011 20
Gate Array — Sea-of-Gates
rows of
cells
routing channel
uncommitted
VD D
GND
polysilicon
metal
possiblecontact
In1 In2 In3 In4
Out
Uncommited Cell
Committed Cell (4-input NOR)
Source: Digital Integrated Circuits, 2nd ©
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Amirtharajah, EEC 116 Fall 2011 21
Unprogrammed Sea-of-Gates Array
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Amirtharajah, EEC 116 Fall 2011 22
Programmed Sea-of-Gates Array
Isolation Provided by Cutoff
Bias
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Amirtharajah, EEC 116 Fall 2011 23
Gate Array
• Polysilicon and diffusion the same for all designs
• 0.125 um example
[figure from LETI]
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Amirtharajah, EEC 116 Fall 2011 24
Field Programmable Gate Array (FPGA)
• Metal layers now programmable with SRAM instead of hardwired during manufacture as with a gate array
• Cells contain general programmable logic and registers
[figure from S. Hauck]
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Amirtharajah, EEC 116 Fall 2011 25
Field Programmable Gate Array (FPGA)
• Chips can now be “designed” with software
• User pays for up-front chip design costs
– All costs: full-custom, standard cell
– Half: gate array
– Shared: FPGA
• User writes code (e.g., Verilog), compiles it, and downloads into the chip
– Can be used to prototype standard cell (ASIC) design
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Amirtharajah, EEC 116 Fall 2011 26
Heterogeneous Programmable Platforms
Xilinx Vertex-II Pro
Courtesy Xilinx
High-speed I/O
Embedded PowerPC Embedded memories
Hardwired multipliers
FPGA Fabric
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Amirtharajah, EEC 116 Fall 2011 27
Design at a Crossroad: System-on-a-Chip
RAM
500 k Gates FPGA+ 1 Gbit DRAMPreprocessing
Multi-SpectralImager
μCsystem+2 GbitDRAMRecog-nition
Ana
log
64 SIMD ProcessorArray + SRAM
Image Conditioning100 GOPS
• Often used in embedded applications where cost,performance, and energy are big issues!
• DSP and control
• Mixed-mode
• Combines programmable and application-specific modules
• Software plays crucial role
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Amirtharajah, EEC 116 Fall 2011 28
A SoC Example: High Definition TV Chip
Courtesy: Philips
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Amirtharajah, EEC 116 Fall 2011 29
Standard Cell Based IC vs. Custom Design IC
• Standard cell based IC: – Design using standard cells
– Standard cells come from library provider
– Many EDA tools to automate this flow
– Shorter design time
• Custom designed IC: – Designed by individual engineers using manual
process
– Higher performance
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Amirtharajah, EEC 116 Fall 2011 30
• Front end– System specification and architecture
– HDL coding & behavioral simulation
– Synthesis & gate level simulation
• Back end– Placement and routing
– DRC, LVS
– Dynamic simulation and static analysis
Standard Cell Based VLSI Design Flow
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Amirtharajah, EEC 116 Fall 2011 31
Asynchronous Array of Simple Processors
• AsAP Project by Prof. Baas’ VLSI Computation Lab
• A processing chip containing multiple uniform simple processor elements
• Each processor has its local clock generator
• Each processor can communicate with its neighbor processors using dual-clock first-in first-out buffers (FIFOs)
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Amirtharajah, EEC 116 Fall 2011 32
Diagram of a 3x3 AsAP
More information: http://www.ece.ucdavis.edu/vcl/asap/
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Amirtharajah, EEC 116 Fall 2011 33
Simple Diagram of Front-End Design Flow
System Specification
RTL Coding Synthesis
Gate Level (Structural)
Code
INV (.in (a), .out (a_inv));AND (.in1 (a_inv), .in2 (b),. out (c));Ex: c = !a & b
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Amirtharajah, EEC 116 Fall 2011 34
Simple Diagram of Back-End Design Flow
Gate level Verilog from synthesis
Place &
Route
Final layout
(sent for fabrication)
DRC
Gate level Verilog LVS
Timing information
Gate level dynamic and/or static analysis
Design rulecheck
Layout vs.Schematic check
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Amirtharajah, EEC 116 Fall 2011 35
Back-end Design of AsAP
• Technology: CMOS 0.18 um
• Standard cell library: Artisan
• Tools
– Placement & Route: Cadence Encounter
– Final layout edit: icfb
– DRC & LVS: Calibre
– Static timing analysis: Primetime
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Amirtharajah, EEC 116 Fall 2011 36
Flow of Placement and Routing
• Import needed files
• Floorplan
• Placement & in-place optimization
• Clock tree generation
• Routing
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Amirtharajah, EEC 116 Fall 2011 37
Import Needed Files
• Gate level verilog (.v)
• Geometry information (.lef)
• Timing information (.lib)
INV (.in (a), .out (a_inv));AND (.in1 (a_inv), .in2 (b), .out (c));
INV: 1um width AND: 2 um width
INV: 1ns delay; AND: 2 ns delay
INV ANDa
b
C
Delay (a->c): 1ns + 2ns = 3ns
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Amirtharajah, EEC 116 Fall 2011 38
Floorplan
• Size of chip
• Location of pins
• Location of main blocks
• Power supply: deliver enough power for each gate
Power Supply (1.8V)Current
Gate 1 Gate 2 Gate 3 Gate 4
1.75V 1.7V
1.65V (need another power line)
Voltage drop equation: V2 = V1 – I * RVSS
VDD (Metal)
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Amirtharajah, EEC 116 Fall 2011 39
Single Processor Floorplan
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Amirtharajah, EEC 116 Fall 2011 40
Placement and In-Placement Optimization
• Placement: place the gates on floorplan
• In-placement optimization
– Why: timing information difference between synthesis and layout (wire delay)
– How: change gate size, insert buffers
– Should not change the circuit function!!
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Amirtharajah, EEC 116 Fall 2011 41
Single Processor: Gate Placement
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Amirtharajah, EEC 116 Fall 2011 42
Clock Tree
• Main parameters: skew, delay, transition time
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Amirtharajah, EEC 116 Fall 2011 43
Single Processor Clock Tree
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Amirtharajah, EEC 116 Fall 2011 44
Routing
• Connect the gates using wires
• Two steps
– Connect the global signals (power)
– Connect other signals
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Amirtharajah, EEC 116 Fall 2011 45
Single Processor Layout
Area: 0.8mm x 0.8mm
Estimated clock frequency:450 MHz
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Amirtharajah, EEC 116 Fall 2011 46
First Generation 6x6 AsAP Layout
Single Processor
Area: 30mm2
36 processors114 I/O pads
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Verification After Layout
• DRC (Design Rule Check)• LVS (Layout vs. Schematic)
– GDS vs. (Verilog + Spectre/Spice module)
• Gate level Verilog dynamic simulation– Mainly check the function
– Different with synthesis result: clock, OPT
• Gate level static analysis– Check all the paths
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Useful Design and Simulation Tools• Dynamic HDL Simulation
– Modelsim (Mentor), NC-verilog (Cadence), Active-HDL
• Dynamic Analog Simulation– Spectre (Cadence), Hspice (Synopsys)
• Synthesis– RTL Compiler (Cadence)– Design-Compiler, Design-Analyzer (Synopsys)
• Placement & Routing– Encounter & Virtuoso (Cadence)– Astro (Synopsys)
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Useful Verification Tools
• DRC & LVS– Calibre (Mentor)– Diva (Cadence – used in EEC 116/119AB)– Dracula (Cadence)
• Static Analysis– Primetime (Synsopsys)
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Next Topics: Low Power and DFM
• Low power design principles and circuit techniques
– Voltage scaling, activity factor reduction, clock gating, leakage reduction
• Design for Manufacturability
– Parameter variations in CMOS digital circuits
– Yield maximization and worst-case design