ECE 321C Electronic Circuits Shoubra/Electrical... · 3. Common-Collector Configuration (2)...
Transcript of ECE 321C Electronic Circuits Shoubra/Electrical... · 3. Common-Collector Configuration (2)...
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ECE 321C Electronic Circuits
Lec. 1: Introduction and Basic ConceptsInstructor
Dr. Maher Abdelrasoulhttp://www.bu.edu.eg/staff/mahersalem3
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Outline
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Course Information
Course Objectives
BJT Basic Concepts
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Course Information
Instructor: Dr. Maher Abdelrasoul
Lectures: Thursday : 12:30 -2:55
Office Hours: Sunday : 10:30-12:30
Teaching Assistant: Eng. Crestina
Text Book: R. Boylestad, Electronic Devices and Circuit Theory, 11th edition, Prentice Hall
Credit: 125 Marks
Grading:
• Final Exam (80 Marks)• Mid Term Exam (20 Marks)• Homework and tutorials activities (15 Marks)• Project (10 Marks) 3
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Course Objectives
• Understand the transistor biasing, modeling, and its small signal analysis.
• Analyze the transistor circuits at low, medium and high frequencies and study its frequency response using bode plots.
• Explain the operation of tuned amplifiers and power amplifiers.
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Transistor Development• Moore’s law predicts that the transistor count of an integrated circuit
will double every 2 years.
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Transistor Construction
• The transistor is a three-layer semiconductor device consisting of either two n- and one p-type layers of material (npn transistor) or two p- and one n-type layers of material (pnp transistor).
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Transistor Operation
• The operation discussed in pnp transistor
One p–n junction of a transistor is reverse-biased,
whereas the other is forward-biased
• The collector current by Kirchhoff’s law
+ =
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Transistor Configurations
Common-Base
Configuration
Common-Emitter
Configuration
Common-Collector
Configuration
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1. Common-Base Configuration (1)
• The common-base terminology is derived from the fact thatthe base is common to both the input and output sides of the configuration.
9pnp
npn
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1. Common-Base Configuration (2)
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α = 0.90:0.998 practically
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1. Common-Base Configuration (3)
• Biasing of a CB pnp tr. in the active region:
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In the active region the base–emitter junction is forward-biased, whereas the collector–base junction is reverse-biased.
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2. Common-Emitter Configuration (1)• It is called the common-emitter configuration because the emitter is
common to both the input and output terminals (in this case common to both the base andcollector terminals).
12pnpnpn
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2. Common-Emitter Configuration (2)
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β=50:400 practically
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2. Common-Emitter Configuration (3)
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• Biasing of a CE npn tr. in the active region:
In the active region of a common-emitter amplifier, the base–emitter junction is forward-biased, whereas the collector–base junction is
reverse-biased.
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3. Common-Collector Configuration (1)• The common-collector configuration is used primarily for impedance-
matching purposes since it has a high input impedance and low output impedance, opposite to that of the common-base and common emitter configurations.
15pnpnpn
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3. Common-Collector Configuration (2)• Limits of operation
Defining the linear (undistorted) region of operation for a transistor
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The output characteristics of thecommon-collector configuration are the
same as for the common-emitter configuration (Ic≈IE).
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Transistor Configuration Sheet• Since the specification sheet is the communication link between the
manufacturer and user, it is particularly important that the information provided be recognized and correctly understood.
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Transistor Testing1. Curve Tracer
18Curve tracer response to 2N3904 npn transistor.
2. Transistor Testers
3. Ohmmeter
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Transistor Casing and Terminal Identification• Casing
• Terminal Identification
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Various types of general-purpose or switching transistors: (a) low power; (b) medium power; (c) medium to high power.
Type Q2T2905 Texas Instruments quad pnp silicon transistor
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