DSG Overview DSG
Transcript of DSG Overview DSG
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DSGT E C H N O L O G I E S
with M3 Technology. 1
AgendaDSG Overview
DSG AXOM Tool
DSG Process Applications:
Activation
Silicide Formation
a-Silicon Crystallization
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DSGT E C H N O L O G I E S
with M3 Technology. 2
Executive TeamDSG Overview
A x o m
• Jeffrey Kowalski• President/CEO of DSG Technologies:
– 34 years Semiconductor Experience. Mostek. – President Silicon Valley Group (SVG) / ASML
1995-2004.– Founded DSG Technologies in 2004
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DSGT E C H N O L O G I E S
with M3 Technology. 3
DSG TechnologiesDSG Overview
A x o m
• Founded 2005: California Corporation
• Private Equity Funded
• Development / Demo Center in Morgan Hill, CA• Development Systems in Class 10,000 Clean Room• Microwave Modeling Capability for New Materials
• Currently Working in Development Programs with >20 Customers:
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DSGT E C H N O L O G I E S
with M3 Technology. 4
Axom Tool LayoutAxom150 / Axom300
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Low Temperature Activation
• Si, SiC, Sapphire Substrates• Low Thermal Budget < 500°C
Activation• Boron : Arsenic : Phosphorus
• Throughput > 50 WPH (300mm)• Low Dopant Diffusion• Patented Microwave Technique
• Low Leakage• Effective with Low Dosages
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BackgroundLTA
• In semiconductor materials, electrons move freely in response to the MW electrical field and an electric current results. The flow of the electrons will heat the material through resistive heating. The higher the resistance of the semiconductor material the higher the temperature it will reach. The average MW power per unit volume is converted to heat.
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DSGT E C H N O L O G I E S
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MW EfficiencyAxom 300 • Loss Factor represents the efficiency of microwave absorption in the wafer, as the loss factor
decreases the efficiency of the microwave absorption decreases.
Loss Factor - Si Wafer
00.20.40.60.8
11.21.41.6
0 100 200 300 400 500 600 700
Temperture (C)
Loss
Fac
tor
Section B Section A
(N-type Wafer)
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DSGT E C H N O L O G I E S
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P-Type Activation : Spike vs MWA
Species : BF2Vacc : 1.5 KeVDose : 1.5e15 cm ²
Species : GEVacc : 15 KeVDose : 3e14 cm ²
PAI Main I/I
Spike MWA
Temperature
Rs (Ohm/Sq.)
STD DEV (%)
1050°C
665
6.3
720
6.1
490°C
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DSGT E C H N O L O G I E S
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P-Type Activation : Spike vs MWA
• Comparable Mobility and Carrier Concentration even at Shallow Junction Depth
Hall Carrier Evaluation
Spike MWA
Rs (Ohm/sq.)
Hall Coef(m²/C)
Mobility(cm²/V•s)
Carrier Conc(cm ²)
577
1.58
27.4
3.95E+14
588
1.90
25.3
3.38E+14
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DSGT E C H N O L O G I E S
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Ge Epitaxy on Si
• Comparisons of Sheet Resistance on Ge Epitaxy Wafer Between RTA and Microwave.
• X-Ray Diffraction (XRD) Analysis
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X-Ray Diffraction (XRD) AnalysisAxom 300
2θ62 64 66 68 70 72
Inte
nsity
10x100
100x100
1x103
10x103
100x103
1x106
450 oC 5 minlevel 6 25 mimlevel 7 100 sec.level 8 30 sec.
• RTA Will Degrade the Ge Crystal• The Ge Signal Still Exits after Microwave Treatment
Ge Signal
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Sheet Resistance (Ohm/sq.)Ge Epitaxy
8.63E22.1E3Microwave
5.30E36.18E31.10E4RTA
600°C 10 sec.
500°C 30 sec.
400°C 100 sec.
• On N-type wafer,BF2 15keV,5E15 cm-2
• N type wafer, resistively: 2~10 Ω-cm
320°C 100 sec.
4.3E2
No Reading
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22nm Devices
MW Applications
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Activation: P-Type
• Total MW Power – 1st Order Condition to Drive Absorption Efficiency
• Average Power per Unit Volume is Converted to Heat
1500
1000
500
Rs
(Ohm
/Sq.
)
Junction Depth (nm)
10.0 10.5 11.0
RsL vs Xj : MW Power Levels
MW Power A
MW Power B
MW Power C
Conditions : GePAI + C + B 200eV
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N-Type Activation : Leakage
• Leakage Reduced with Longer Dwell Time or Increased MW Power
1000
100
10
Leak
age
(a.u
.)
Dwell Time (sec)
60 120 180
Leakage Measurement
1
240 300
MW Power A (450°C)
MW Power B (500°C)
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DSGT E C H N O L O G I E S
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USJ Activation
PAI Implant Rs (ohm/sq.) Avg.5 keV, 1E15 810
10 keV, 1E15 750
15 keV, 1E15 760
20 keV, 1E15 755
USJ Activation with PAI: B 0.5keV, 5E14
Without PAI: Rs = 6150 ohm/sq.
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Nickel Silicide Formation
• Formation of NiSi 220°C
• Process time: 60 seconds
• Throughput >100 WPH (300mm)
• Reduced Leakage in Replacement RTP2
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a-Si Crystallization
Damage Recovery
Metal Gate annealw/ Al
• MSM Capacitor Formation
• Image Sensor Damage Recovery
• Integration: Metal Gate ZrO2 Crystallization < 250C
• Single Crystal Ge Activation
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Image Sensors – Damage Recovery
• DSG R&D Research Project for Next Generation Image Devices
• Recovery Levels equal to 1300°C RTP / Multiple Laser Steps
• Damage Recovery Improvement over Thermal Anneal
0.1 µm 0.1 µm
1300°C Standard AnnealSi Implant 70 keV
600°C MW AnnealSi Implant 70 keV