DRM-Double Ring Magnetron en Net
4
DRM 400 Double Ring Magnetron Sputtering for stationary coating
Transcript of DRM-Double Ring Magnetron en Net
DRM 400Double Ring Magnetron
Sputtering for stationary coating
Special features
electrically insulated inner and outer •
targetindividually adjustable magnet •
systemssuited for DC, RF and MF pulse •
sputteringlong term efficacious hidden anode•
integrated pressure and optical •
plasma emission measurementdifferent target materials for inner •
and outer target possible to deposit alloys or multilayersfilm thickness uniformity •
± 0.5 … 3% on 8“ substrates bysuperposed contributions of innerand outer target
Functions
deposition of compound layers by •
pulse reactive sputteringplasma source for Magnetron-PECVD •
processes (magPECVD)powering in unipolar and bipolar •
pulse mode for adjustment of energetic substrate bombardment
N S N SN S N S
shielding
anode
flange
substrate
inner target
outer target
outer magnet system inner magnet system
adjustable magnet systems according to target erosion
Schematic of DRM-type magnetron sputter sources
Superposition of film thickness contributions from inner and outer discharge ring
Applications
Antireflective coating of ophthalmic lenses
double sided Si• XOYNZ antireflective coatingapparent green residual reflection •
according to customer requirementlow thermal substrate load for coa-•
ting temperature sensitive substratesgood adhesion and environmental •
stability on plastic substrates (cross cut tape test, salt water boiling test, climatic test)
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1
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750700650600550500450400
refle
ctan
ce [%
]
wavelength [nm]
Coated lensReflectance spectrum of double sided coated lens
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Outer Discharge Inner DischargeDouble Ring Magnetron
rela
tive
film
thic
knes
s [%
]
radial position on the wafer [mm]
-100 -80 -60 -40 -20 20 40 60 80 100
Type of layer Deposition rate [nm/s]
Metals
Al 20
Cr 15
Cu 25
Alloys
Ni/Al 10
Type of layer Deposition rate [nm/s]
Multilayer
CrNiCo/Cr 5
Compounds
Al2O3 2.5
AlN 2
Type of layer Deposition rate [nm/s]
SiO2 4
Si3N4 2
TiO2 2
Ta2O5 3
TaN 3.5
Nb2O5 3
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40
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80
100
140012001000800600400
T [%
]
[nm]
Transmission spectrum of SiXTaYOZ rugate filterBragg-Brentano XRD intensity of AlN film on Si wafer
Pressure sensors(in cooperation with SIEGERT TFT GmbH)
Al2O3 layer (40 μm) as protective coating for thin film magnetic head
Highly insulating films very good insulation properties of •
SiO2 and Al2O3 filmshigh deposition rates and low defect •
density by reactive pulse sputteringeffective production of thick layers•
with insulation voltages up to 1500 V, e. g. in pressure sensors
Surface acoustic wave (SAW) component© Leibniz Institute for Solid State and Materials Research (IFW) Dresden, Germany
SiO2 layer (2 μm) to enhance temperaturestability of SAW components
Functional layers for surface acoustic wave (SAW) components
Al films for SAW electrodes with •
thickness uniformity 0.5 % across 8“ substrateSiO• 2 films for compensation of temperature dependency of SAW componentsmechanical properties of SiO• 2 films close to bulk SiO2
Thin film chip resistor with SiO2 film protection layer on Al2O3 ceramic substrate (thick film quality, as fired)
Visualization of rugate filter effect SEM of rugate filter with 45 layer cycles
Optical filter coatingvery low absorption and scattering •
losses of dielectric films deposited by reactive pulse magnetron sputteringsuited for laser optic applications•
multilayer stacks or gradient layers by •
change of reactive gas flow ratio or by reactive co-sputteringexample: narrow band rugate filter •
with sinusoidal refractive index profileapplication: laser optics, spectroscopy•
Passivation, protective, barrier and etch-resistant films
Al• 2O3 as protective film for thin film magnetic headsAl• 2O3 as diffusion barrier for sensor elementsSiO• 2 as passivation and protective layer for electronic componentsSi• 3N4 and Al2O3 films with high etching resistivity (etch stop layer)
Films for electronic and MEMSapplication
crystalline AlN films with strong c-axis •
orientation for piezoelectric applica-tionTaN films for thin film resistors•
Ta• 2O5 as high k dielectricSi• 3N4 film as barrier film for CMOS device 0
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3736,53635,5352 - Theta [°]
inte
nsity
[au]
material resistivity [Ωcm]
breakdown field strength [MV/cm]
Al2O3 2.3x1016 6.2
SiO2 6.3x1016 5.6
Si3N4 5.2x1013 2.4
Fraunhofer-Institut für Elektronenstrahl- und Plasmatechnik FEPWinterbergstraße 2801277 Dresden, Germany
www.fep.fraunhofer.de
Dr. Peter Frach
Phone +49 351 2586-370Fax +49 351 2586-55-370
Dr. Hagen Bartzsch
Phone +49 351 2586-390Fax +49 351 2586-55-390
Process control and technology
automatic push button control of the •
entire coating procedurestabilization of reactive process -
for high rate and long term stable processing magnet adjustment to compensate -
target erosioncontrol of power input -
gas inlet management and pressure -
control
Hardware
DRM sputter source with integrated•
gas distribution system -
adjust devices for the magnets -
reactive gas control valve -
optical emission detector (OED) -
DC, MF pulse or RF powering accor-•
ding to applicationMF powering in unipolar, bipolar •
pulse and pulse package mode
MF pulsepoweringUBS-C2
Process Management Computer
Double Ring Magnetron DRM 400
N S S N S NN S
outer inner target outer
stationary substrate d=200 mmmass flowcontroller
O2
N2
Ar
flangeDN 400ISO-K
space requirements outside vacuum chamber
magnet controlunit
plasmashield
controlconnector
processgas
powerinput
coolingwater
∅39
8
Double RingMagnetronDRM 400
110 275 400
∅70
0
chamber wall
Measures of DRM 400 sputter source
Schematic of Integrated package DRM-sputtering
Integrated package DRM-sputtering
Our services rendered
basic technology for a variety of •
applicationsapplication oriented process develop-•
ment of layer systems with customer specific requirementsfeasibility studies•
delivery of complete self-sufficient •
sputter systems containing all necessary components to solve your deposition task
installation and putting into opera-•
tion of sputter systemsretrofit of customers coating equip-•
mentafter sales service•
training concerning process mastery•
technology development back up•
licensing•
pre-programmed recipes for a variety •
of coating applicationscommunication to host computer •
for fully automatic run of the sputter systemremote control via telephone for sup-•
port, service and software upgrade
measurement and control devices for•
inert and reactive gas flow -
process pressure -
optical plasma emission -
magnetic field strength at target -
surfaceprocess management computer•
RF bias, RF ion etching capabilities •
available
