Dr. Robert P. Meagley Intel’s Researcher in Residence Lawrence Berkeley National Laboratory

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Beyond PFOS- Preorganized Lithographic Materials at Intel’s Molecules for Advanced Patterning Program Dr. Robert P. Meagley Intel’s Researcher in Residence Lawrence Berkeley National Laboratory MAPP MAPP http://www.intel.com/technology/techresearch/people/bios/meagley_r.htm

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Beyond PFOS- Preorganized Lithographic Materials at Intel’s Molecules for Advanced Patterning Program. Dr. Robert P. Meagley Intel’s Researcher in Residence Lawrence Berkeley National Laboratory. MAPP. http://www.intel.com/technology/techresearch/people/bios/meagley_r.htm. Outline. - PowerPoint PPT Presentation

Transcript of Dr. Robert P. Meagley Intel’s Researcher in Residence Lawrence Berkeley National Laboratory

Page 1: Dr. Robert P. Meagley Intel’s Researcher in Residence  Lawrence Berkeley National Laboratory

Beyond PFOS- Preorganized Lithographic Materials at Intel’s

Molecules for Advanced Patterning Program

Dr. Robert P. MeagleyIntel’s Researcher in Residence Lawrence Berkeley National Laboratory

MAPPMAPPhttp://www.intel.com/technology/techresearch/people/bios/meagley_r.htm

Page 2: Dr. Robert P. Meagley Intel’s Researcher in Residence  Lawrence Berkeley National Laboratory

Outline

•Why MAPP?

•Why deploy at the Molecular Foundry?

• What do we do here?

• 1st 18months: Conclusions

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Lithography

Meagley, Robert P., “Sub 30nm Photoresist Design Considerations: Molecular Nanotechnology”, Future Fab International, 21, 2006

Page 4: Dr. Robert P. Meagley Intel’s Researcher in Residence  Lawrence Berkeley National Laboratory

Nearly two billion transistors “Montecito”193nm litho into 32nm node then EUV

Intel Lithography Roadmap

SA Challenges:SA Challenges:•RoughnessRoughness•ResolutionResolution•DefectsDefects

MolecularMolecularDefectsDefects

MolecularMolecularCDsCDs

EWH35nm

DUV

EUV

65nm Node

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Accelerate discovery in nano-lithography

IntelIntel

National Lab

SupplierUniversity

“Technology Tetrahedron”

Molecules for Advanced Patterning

Page 6: Dr. Robert P. Meagley Intel’s Researcher in Residence  Lawrence Berkeley National Laboratory

• Capabilities– Metrology (Foundry, NCEM)

• Chemical: LC/MS, MALDI, NMR• Surface: elipsometry, SEM, CFM

– Lithography (ALS, Foundry, UCB)• 248nm, e-beam UCB Microlab• EUV MET, Nanowriter

– Synthesis (Foundry)• Prototyping in <10g lots• 4 Fume hoods & drybox in two 500 sq. ft. labs

• People– Intel Components Research Sr. Staff Scientist – 3 Post-docs one position now open (LBNL)– Contractors, assistants & visitors

• Collaborations: NIST, UWI & tech transfer

Program Structure

Page 7: Dr. Robert P. Meagley Intel’s Researcher in Residence  Lawrence Berkeley National Laboratory

500nm

Photoresist Structures

AFM reveals high levels of organization

Intrinsic ordering impacts imageSeveral levels 50 10 nmEmpirically engineered for HVM

Page 8: Dr. Robert P. Meagley Intel’s Researcher in Residence  Lawrence Berkeley National Laboratory

H+ Polymer (i) Polymer (s) PAG H+ B- + H+ HB

Base

AcidPixel Micelle/Dendrimer Oligomer Film• Catalysis fast within pixel, slow outside• Higher Eact PGs/ Higher pKa acids• Self-assembly disruption adds contrast• Diffusion control beyond PFOSPFOS

Benefits of Preorganization

Greener chemistry, enhanced performance

Page 9: Dr. Robert P. Meagley Intel’s Researcher in Residence  Lawrence Berkeley National Laboratory

Some Prototypes

Class Types Result

APPAGLong & Short Diffusion helps

DOF & profile248nm, 193, EUV, e-

beam

Scissionable Steroidal

Dendrimer

Scissionable Host for PAG Guest

6 kinds of G0 madeG1 made in June

G0 gave <5mJ/cm**2 EUV working on

increased temperature resistance

Scissionable Quencher Backbone

Preorganized quencher directs acid to protection

6 copolymers

10mJ/cm**2 EUV working on increased

temperature resistance

Nano-composite C, Si filler

Diamond nano-powder needs better dispersion

Advanced Developer proprietary

Fast photospeed, low PEB, short diffusion,

large margin

Page 10: Dr. Robert P. Meagley Intel’s Researcher in Residence  Lawrence Berkeley National Laboratory

APPAG

• Adhesion Promoting Photo Acid Generator

• Pre-organizes catalyst boost signal/noise

• Siloxane with pendant active species

• Ultra thin films and SAMs

• Building block for more complex structures

• Pre-organiz e cata lyst & s witch for k inetic a dvantage

• Bas e loca lizes c atalys t for pixel discrimination

Moiety placement guides proton trajectory

Page 11: Dr. Robert P. Meagley Intel’s Researcher in Residence  Lawrence Berkeley National Laboratory

Corrected profile

Sloped profile

H+H+

H+

H+

H+

H+H+H+

H+H+

H+

H+

H+H+

APPAG Chemistry

Monomer MALDI- TOF

• Tuned diffusion for CD contol• Tuned thickness with Mw control• Surface-seeking PAG• Faster photospeed

Page 12: Dr. Robert P. Meagley Intel’s Researcher in Residence  Lawrence Berkeley National Laboratory

Control: square at zero focus but footed out of the focus

APPAG: Square profile retained at zero and out of focus

36 mj/cm2, 0 micron focus 40mj/cm2, 0.8 micron focus

1st APPAG Print Test

Commercial resist applied over an underlayerThe control is a commercial BARC

Page 13: Dr. Robert P. Meagley Intel’s Researcher in Residence  Lawrence Berkeley National Laboratory

-1.5 -0.9 -0.26 +0.38 +1Defocus,

300

238

175

115

50

CD, nm

defocus 0

APPAG9

APPAG6

Control

-1.5 -0.9 -0.26 +0.38 +1Defocus,

300

238

175

115

50

CD, nm

defocus 0

APPAG9

APPAG6

Control

36mJ/cm2

250nm mask

Triflate improved DUV depth of focus

Bossung plots (DUV exposure)

Page 14: Dr. Robert P. Meagley Intel’s Researcher in Residence  Lawrence Berkeley National Laboratory

Scissionable Quencher Backbone

• Quencher integration in the polymer backbone

• Pre-organize catalyst & switch for kinetic advantage

• Base localizes catalyst for pixel discrimination

• Pre-organiz e cata lyst & s witch for k inetic a dvantage

• Bas e loca lizes c atalys t for pixel discrimination

Moiety placement guides proton trajectory

Page 15: Dr. Robert P. Meagley Intel’s Researcher in Residence  Lawrence Berkeley National Laboratory

SQB 1st Prototype

Flexible linker

EUV Dose mJ/cm2

Geometric Acceleration: “Spatio-temporal Effect”

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Rigid SQB Prototype

Page 17: Dr. Robert P. Meagley Intel’s Researcher in Residence  Lawrence Berkeley National Laboratory

Scissionable Steroidal Dendrimer

Moiety placement guides proton trajectory

Page 18: Dr. Robert P. Meagley Intel’s Researcher in Residence  Lawrence Berkeley National Laboratory

Morphology from Casting Solvent

Scissionable Steroidal Dendrimer

Page 19: Dr. Robert P. Meagley Intel’s Researcher in Residence  Lawrence Berkeley National Laboratory

G1 Dendron & Hyperbranching

OH

CH3

O

OH

CH3CH3

OH

Swern

O

CH3

O

OH

CH3CH3

O

TFAAO

CH3

O

R

CH3CH3

O

R= O(O)CCF3

I

1) MeLi2) I

O

CH3

O

O

CH3CH3

O

O

CH3

O CH3CH3

O

CH3

O

OH

CH3CH3

CH3

O

CH3

Page 20: Dr. Robert P. Meagley Intel’s Researcher in Residence  Lawrence Berkeley National Laboratory

G1 Dendrimer

extended conformation

Page 21: Dr. Robert P. Meagley Intel’s Researcher in Residence  Lawrence Berkeley National Laboratory

18th Month Conclusions

• MAPP in Molecular Foundry “Jumpstart”– 6 months from empty room to 1st prototype – 4 designs and 18 prototypes in 1st year

• Diffusion control through preorganization– APPAG steers proton with interface – SBQ steers proton with base– SDR Steers proton with polarity

• Future materials needed– Pattern anticipation– Dimensional decoupling (Z from X-Y, X from Y)

Diffusion control to eliminate PFOS

Page 22: Dr. Robert P. Meagley Intel’s Researcher in Residence  Lawrence Berkeley National Laboratory

Acknowledgements

• Intel: Dr. Mike Mayberry, Melissa Shell, Dr. Michael Leeson, Dr. Heidi Cao, Dr. Adam Schafer, Dr. Wang Yueh, Vani Thirumala

• Molecular Foundry: Dr. Eduardo Saiz, Dr. Geeta Sharma, Dr. Shalini Sharma, Ankur Gupta, Kate Goodin, Michael Rattner, Igor Tregub

• NCEM: Doreen Ah Tye & DOE* • ALS: Brian Hoef and Paul Denham• UCB Microlab team• UWI: Prof. Paul Nealey, Prof. Padma Gopalan, Dr.

Insik In, Young-Hye Na • Thank you for your attention!

•# DE-AC02-05CH11231

Page 23: Dr. Robert P. Meagley Intel’s Researcher in Residence  Lawrence Berkeley National Laboratory

Backup

Page 24: Dr. Robert P. Meagley Intel’s Researcher in Residence  Lawrence Berkeley National Laboratory

APPAG Mass Spectroscopy

Page 25: Dr. Robert P. Meagley Intel’s Researcher in Residence  Lawrence Berkeley National Laboratory

DOE in synthesis: ES MS of APPAG intermediate

• Initial results inconsistent

• DOE revealed “cliff” at 120 degrees

RT 120 1h 120 2h

140 1h 160 1h 140 1h APPAG6

• Low level light exclusion key in 2nd step

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SBQ Mass Spectroscopy

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2006 Publications/Presentations

• R. Meagley, S. Sharma, G. Sharma, K. Goodin, M. Rattner, “Smart Interfaces: improving pattern fidelity with the gain enhancing underlayers, APPAG”, J. Macromolecular Sci., 45(6), 2006 (invited paper, in Press)

• R. Meagley “Sub 30nm photoresist design” Future fab International, Issue 26, June 2006 (invited paper)

http://www.future-fab.com/documents.asp?d_ID=4005• G. Sharma, S. Sharma, R. Meagley “Preorganization in

Photoresist Architecture” 12th Wintertur Symposium on Polymers for Microelectronics May 3, 2006 (invited talk)

• J.M. Roberts, R. Meagley, T.H. Fedynyshyn, R.F. Sinta, D.K. Astolfi, R.B. Goodman, and A. Cabral, Proc. SPIE 6153 (2006).

• T.H. Fedynyshyn, R.F. Sinta, D.K. Astolfi, A. Cabral, J.M. Roberts, and R. Meagley, Proc. SPIE 6153 (2006).