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Components Catalog

OSI O

ptoelectronics

Optoelectronic Com

ponents Catalog

© Copyright 2007 OSI Optoelectronics, Inc., Version 4 Rev. 101215

WORLD HEADQUARTERS

OSI OptoelectronicsFormerly UDT Sensors, Inc.Formerly CentrovisionFormerly OSI Fibercomm12525 Chadron AveHawthorne, CA 90250, USATel: +1 310-978-0516Fax: +1 310-644-1727

OSI OptoelectronicsE-mail: [email protected]

OSI ELECTRONICS MANUFACTURING FACILITIES

OSI Electronics, Inc.12525 Chadron AveHawthorne, CA 90250USATel: +1 310-978-0516

OSI Electronics Singapore65A, Jalan Tenteram #04-13St Michael Industrial EstateSingapore 328958Tel: +65-63539622

PT OSI ElectronicsCammo Industrial Park, Blok F No. 3ABatam, Centre, Batam 29461Indonesia

OSI OPTOELECTRONICS MANUFACTURING FACILITIES

OSI Optoelectronics MalaysiaPTD 159386, KM 6.5Jalan Kampung Maju Jaya81300 Skudai, Johor Bahru, Malaysia

OSI Optoelectronics Pvt. Ltd.Plot #16 and Plot #17, Kancha ImaratHardware Park, Raviryala VillageMaheshwaram Mandal, Rangareddy DistrictHyderabad 500005, India

OSI Laser Diode, Inc.4 Olsen AvenueEdison, New Jersey 08820, USATel: +1 732-549-9001Fax: +1 732-906-1559

Complete Solutions

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COMPREHENSIVE solutions:Standard and Custom Photodiodes (UV, Visible and NIR)X-Ray Products (CT Scanner, Security System and Industrial Inspection Apparatus)Opto-assembly (Optical Switch, LED and Cable Assembly)Medical Products (Medical Probe and Analyzer)Tele-com and Data-com Applications (SONET/SDH Application and Fiber-coupled Assembly)Military and Aerospace Specialties (MIL-I-45208, MIL-STD-45662, MIL-S-19500, MIL-STD-750 and MIL-STD-883)

ENGINEERING capabilities:Tool and Die Injection MoldingBook Mold and PrototypingProduction Tooling / MachiningPrecision Laser TrimmingGMP-compliant PracticesValue-added Assemblies (Heat Staking and Ultrasonic Welding)Custom Tooling (Computer Peripherals and Medical Electronics)

OSI Optoelectronics, Inc. commitments:CustomerInnovationExcellence in Service, Quality and Delivery

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QUALITY SYSTEMS CERTIFICATIONS, REGISTRATIONS AND STANDARDS

UDT Sensors, Inc. has expanded business operations to merge with AME, Centrovision, Ferson Technologies and OSI Fibercomm; the combined infrastructure will now be known as OSI Optoelectronics, Inc.

The new OSI Optoelectronics, Inc., will continue to put forth extensive engineering solutions aligned with efficient manufacturing. In addition, with our growing base of customer support we will expand into new product arenas and application domains. OSI Optoelectronics, Inc. will carry on these market-driven spirits in being the largest and most counted on manufacturer of optical sensors.

In today’s ever-competitive industry that views success as synonymous with efficient process, OSI Optoelectronics, Inc. U.S. headquarters is housed in a modern 54,000 sq.ft. facility. Additionally, it operates two world-class manufacturing facilities overseas in both India and Malaysia for meeting high-volume production requirements. And our innovative vertical integrations, along with well-established global sales roots in both Europe and U.S. alike, help reduce design cycle-time and keep implementation cost to a minimum for our customers.

MALAYSIAN FACILITY

AS9100C Certified

ISO 9001 Certified

ISO 13485 Certified

ISO 140001 Certified

INDIA FACILITY

ISO 13485 Certified

HAWTHORNE FACILITY

AS9100 Certified

ISO 9001 Certified

SO 13485 Certified

Compliant to MIL-I-45208

Compliant to MIL-PRF-19500

Test and Environmental Test Capabilities compliant to MIL-TD-883 and MIL-STD-750

In-House J-STD-001C soldering instructor

Test capabilities to meet GR-468-CORE conformance and qualification testing

Table of ContentsVersion 4

Rev.10122015

Photodiode Characteristics and Applications 2PSD Characteristics 8Application Notes and Reading Sources 11Standard Si Photodiode Products 12 Photoconductive Series 13 Photovoltaic Series 15 UV Enhanced Series 17 Inversion Layer Series 18 Planar Diffused Series 19 High Speed Silicon Series 20 Soft X-Ray, Deep UV Enhanced Series 22 High Breakdown Voltage, Fully Depleted Series 24 Multi-Channel X-Ray Detector Series 26 YAG Series 28 PhotopsTM, Photodiode-Amplifier Hybrids 29 BPW-34, Plastic Molded - Industry Standard 32 Plastic Encapsulated Series, Lead Frame Molded Photodiodes 33 Detector-Filter Combination Series 35 Series E, Eye Response Detectors 37 Dual Sandwich Detector Series 38 Multi-Element Array Series 40 Solderable Chip Series 42 Back Illuminated Si Photodiodes 44 Avalanche Photodiodes, Ultra High Gain Si Photodetectors 46 Position Sensing Detectors (PSD) Segmented Photodiodes, SPOT Series 48 Duo-Lateral, Super Linear PSD Series 50 Tetra-Lateral PSD Series 52 Sum and Difference Amplifier Modules 54 4x4 Si Array Detectors 55 Dual Emitter / Matching Photodetector Series 56 Photodiode Care and Handling 58Mechanical Drawings Mechanical Specifications 61 Die Topography 74Custom Photodiode Form 77Application Notes 78Standard InGaAs Photodiode Products 155Mbps/622Mbps/1.25Gbps/2.50Gbps, High Speed Series 86 FCI-InGaAs-XXX-X, Large Active Area 88 FCI-InGaAs-QXXX, Large Active Area Segmented Quadrants 90 FCI-InGaAs-XXM, High Speed Arrays 92 1.25Gbps/2.50Gbps, Photodetector-Transimpedance Amplifier Hybrids 94 622Mbps, Photodetector-Transimpedance Amplifier Hybrids 96 FCI-InGaAs-300B1XX, Back Illuminated Photodiode/Arrays 98 FCI-InGaAs-WCER-LR, Broadband AR Coated Detectors 100 10Gbps, FCI-InGaAs-36C 101 FCI-InGaAs-XX-XX-XX, High Speed w/Pigtail Packages Series 102 FCI-InGaAs-XXX-WCER, Wraparound Ceramic Packages 103 FCI-InGaAs-XXX-ACER, Wedge Ceramic Packages 104 FCI-InGaAs-XXX-LCER, Ceramic Packages w/Leads 105 FCI-InGaAs-XXX-CCER, Cavity Ceramic Packages 106High Speed Si Photodiode Products FCI-XXXA, Large Active Area 970 nm Detectors 108 100Mbps/155Mbps/622Mbps, Large Active Area, High Speed Detectors 110 1.25Gbps, 850nm, Large Active Area, High Speed Detectors 112 FCI-H125G-010, 1.25Gbps, Photodetector-Transimpedance Amplifer Hybrid 114 BPX65-100, Fiberoptic Receiver 116GaAs Photodiode Products FCI-GaAs-XXM, High Speed GaAs Arrays 117 1.25Gbps/2.50Gbps, GaAs Photodetector-Transimpedance Amplifier Hybrid 118Fiber Optic Receptacles FC / SC / ST Receptacle Packages 120

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2

Silicon photodiodes are semiconductor devices responsive to high-energy particles and photons. Photodiodes operate by absorption of photons or charged particles and generate a flow of current in an external circuit, proportional to the incident power.

Photodiodes can be used to detect the presence or absence of minute quantities of light and can be calibrated for extremely accurate measurements from intensities below 1 pW/cm2 to intensities above 100 mW/cm2.

Silicon photodiodes are utilized in such diverse applications as : •Spectroscopy

•Photography

•Analyticalinstrumentation

•Opticalpositionsensors

•Beamalignment

•Surfacecharacterization

•Laserrangefinders

•Opticalcommunications

•Medicalimaginginstruments

PLANAR DIFFUSED SILICON PHOTODIODE CONSTRUCTION

Planar diffused silicon photodiodes are simply P-N junction diodes.A P-N junction can be formed by diffusing either a P-type impurity(anode), such asBoron, into aN-type bulk siliconwafer, or aN-typeimpurity, such as Phosphorous, into a P-type bulk silicon wafer. Thediffused area defines the photodiode active area. To form an ohmiccontact another impurity diffusion into the backside of the wafer isnecessary.TheimpurityisanN-typeforP-typeactiveareaandP-typeforanN-typeactivearea.Thecontactpadsaredepositedonthefrontactiveareaondefinedareas,andonthebackside,completelycoveringthe device. The active area is then passivatedwith an anti-reflectioncoating to reduce the reflection of the light for a specific predefinedwavelength. The non-active area on the top is covered with a thicklayerofsiliconoxide.Bycontrollingthethicknessofbulksubstrate,thespeedandresponsivityofthephotodiodecanbecontrolled.Notethatthe photodiodes,when biased,must be operated in the reverse biasmode,i.e.anegativevoltageappliedtoanodeandpositivevoltagetocathode.

Photodiode Characteristics and Applications

Figure 1. Planar diffused silicon photodiode

Figure 2. Penetration depth (1/e) of light into silicon substrate for various wavelengths.

Penetration Depth

PRINCIPLE OF OPERATION

Silicon is a semiconductor with a band gap energy of 1.12 eV atroomtemperature.This is thegapbetween thevalencebandand theconduction band. At absolute zero temperature the valence band iscompletelyfilledandtheconductionbandisvacant.Asthetemperatureincreases,theelectronsbecomeexcitedandescalatefromthevalenceband to the conduction band by thermal energy. The electrons canalso be escalated to the conduction band by particles or photonswithenergiesgreater than1.12eV,whichcorresponds towavelengthsshorter than1100nm.The resultingelectrons in theconductionbandarefreetoconductcurrent.

Due to concentration gradient, the diffusion of electrons from theN-typeregiontotheP-typeregionandthediffusionofholesfromtheP-typeregion to theN-typeregion,developsabuilt-involtageacrossthe junction. The inter-diffusion of electrons and holes between theN and P regions across the junction results in a region with no freecarriers. This is the depletion region. The built-in voltage across thedepletionregionresultsinanelectricfieldwithmaximumatthejunctionandno fieldoutsideof thedepletion region.Anyapplied reversebiasaddstothebuiltinvoltageandresultsinawiderdepletionregion.Theelectron-hole pairs generated by light are swept away by drift in thedepletion region and are collected by diffusion from the undepletedregion. The current generated is proportional to the incident light orradiationpower.Thelight isabsorbedexponentiallywithdistanceandisproportionaltotheabsorptioncoefficient.Theabsorptioncoefficientis veryhigh for shorterwavelengths in theUV regionand is small forlongerwavelengths (Figure2).Hence,shortwavelengthphotonssuchasUV,areabsorbed ina thin topsurface layerwhilesiliconbecomestransparent to light wavelengths longer than 1200 nm. Moreover,photonswithenergiessmallerthanthebandgaparenotabsorbedatall.

(continued)


ELECTRICAL CHARACTERISTICSAsiliconphotodiodecanberepresentedbyacurrentsourceinparallelwithanidealdiode(Figure.3).Thecurrentsourcerepresentsthecurrentgeneratedby the incident radiation,and thediode represents thep-njunction.Inaddition,ajunction capacitance (Cj)andashunt resistance (RSH)areinparallelwiththeothercomponents.Series resistance (RS)isconnectedinserieswithallcomponentsinthismodel.

Figure 3. Equivalent Circuit for the silicon photodiode

Shunt Resistance, RSHShunt resistance is the slope of the current-voltage curve of thephotodiodeattheorigin,i.e.V=0.Althoughanidealphotodiodeshouldhave an infinite shunt resistance, actual values range from 10’s to1000’sofMegaohms.Experimentallyitisobtainedbyapplying±10mV,measuringthecurrentandcalculatingtheresistance.Shuntresistanceisused todetermine thenoisecurrent in thephotodiodewithnobias(photovoltaic mode). For best photodiode performance the highestshuntresistanceisdesired.

Series Resistance, RSSeries resistance of a photodiode arises from the resistance of thecontacts and the resistance of the undepleted silicon (Figure 1). It isgivenby:

( 1 )

Where WS is the thickness of the substrate, Wd is the width of thedepletedregion,Aisthediffusedareaofthejunction,istheresistivityof thesubstrateandRC is thecontact resistance.Series resistance isusedtodeterminethelinearityofthephotodiodeinphotovoltaicmode(no bias, V=0). Although an ideal photodiode should have no seriesresistance,typicalvaluesrangingfrom10to1000Ω’saremeasured.

Junction Capacitance, CJThe boundaries of the depletion region act as the plates of aparallelplatecapacitor (Figure1).The junctioncapacitance isdirectlyproportionaltothediffusedareaandinverselyproportionaltothewidthof the depletion region. In addition, higher resistivity substrates havelowerjunctioncapacitance.Furthermore,thecapacitanceisdependentonthereversebiasasfollows:

( 2 )

Figure 4. Capacitance of Photoconductive Devices versus Reverse Bias Voltage

where 0= 8.854x10-14 F/cm, is thepermittivity of free space, Si=11.9is the silicon dielectric constant, µ = 1400 cm2/Vs is the mobility oftheelectronsat300K,istheresistivityofthesilicon,Vbiisthebuilt-in voltage of silicon and VA is the applied bias. Figure 4 shows thedependence of the capacitance on the applied reverse bias voltage.Junctioncapacitanceisusedtodeterminethespeedoftheresponseofthephotodiode.

Rise / Fall Time and Frequency Response, tr / tf / f3dBThe rise timeand fall timeofaphotodiode isdefinedas the time forthesignaltoriseorfall from10%to90%or90%to10%ofthefinalvaluerespectively.Thisparametercanbealsoexpressedasfrequencyresponse, which is the frequency at which the photodiode outputdecreasesby3dB.Itisroughlyapproximatedby:

( 3 )

Therearethreefactorsdefiningtheresponsetimeofaphotodiode:

1.tDRIFT,thechargecollectiontimeofthecarriersinthedepletedregionofthephotodiode.

2.tDIFFUSED,thechargecollectiontimeofthecarriersintheundepletedregionofthephotodiode.

3.tRC,theRCtimeconstantofthediode-circuitcombination.

tRC is determined by tRC=2.2 RC, where R, is the sum of the diodeseriesresistanceandthe loadresistance (RS + RL),andC, is thesumof thephotodiode junction and the stray capacitances (Cj+CS). Sincethe junctioncapacitance (Cj) isdependentonthediffusedareaof thephotodiodeandtheappliedreversebias(Equation2),fasterrisetimesareobtainedwithsmallerdiffusedareaphotodiodes,andlargerappliedreverse biases. In addition, stray capacitance can be minimized byusing short leads, and careful lay-out of the electronic components.Thetotalrisetimeisdeterminedby:

( 4 )

Generally, in photovoltaic mode of operation (no bias), rise time isdominated by the diffusion time for diffused areas less than 5 mm2 andbyRCtimeconstantfor largerdiffusedareasforallwavelengths.Whenoperatedinphotoconductivemode(appliedreversebias),ifthephotodiodeisfullydepleted,suchashighspeedseries,thedominantfactoristhedrifttime.Innon-fullydepletedphotodiodes,however,allthreefactorscontributetotheresponsetime.

3

Iph

Cj Rsh RL V0

Id

I0 Rs

Photodiode Characteristics

Typical Capacitance vs. Reverse Bias

OPTICAL CHARACTERISTICS

Responsivity, R

Theresponsivityofasiliconphotodiodeisameasureofthesensitivityto light, and it is defined as the ratio of the photocurrent IP to theincidentlightpowerPatagivenwavelength:

( 5 )

Inotherwords, it is ameasureof theeffectivenessof theconversionof the lightpower intoelectricalcurrent. Itvarieswith thewavelengthof the incident light (Figure 5) as well as applied reverse bias andtemperature.

Figure 5. Typical Spectral Responsivity of Several DifferentTypes of Planar Diffused Photodiodes

Responsivity increases slightly with applied reverse bias due toimproved charge collection efficiency in the photodiode. Also thereare responsivity variationsdue to change in temperature as shown infigure6.Thisisduetodecreaseorincreaseofthebandgap,becauseof increase or decrease in the temperature respectively. Spectralresponsivitymayvaryfromlottolotanditisdependentonwavelength.However, therelativevariations inresponsivitycanbereducedto lessthan1%onaselectedbasis.

Figure 6. Typical Temperature Coefficient of Responsivity For SiliconPhotodiode

Quantum Efficiency, Q.E.Quantum efficiency is defined as the fraction of the incident photonsthatcontributetophotocurrent.Itisrelatedtoresponsivityby:

( 6 )

where h=6.63 x 10-34 J-s, is the Planck constant, c=3 x 108 m/s, isthe speed of light, q=1.6 x 10-19 C, is the electron charge, R is theresponsivityinA/Wandisthewavelengthinnm.

Non-UniformityNon-Uniformity of response is defined as variations of responsivityobservedover the surfaceof thephotodiodeactiveareawitha smallspotof light.Non-uniformity is inverselyproportional tospotsize, i.e.largernon-uniformityforsmallerspotsize.

Non-LinearityAsiliconphotodiodeisconsideredlinearifthegeneratedphotocurrentincreases linearlywith the incident lightpower. Photocurrent linearityis determined by measuring the small change in photocurrent as aresult of a small change in the incident light power as a function oftotalphotocurrentorincidentlightpower.Non-Linearityisthevariationof theratioof thechange inphotocurrent to thesamechange in lightpower, i.e. ∆I/∆P. In another words, linearity exhibits the consistencyof responsivity over a range of light power.Non-linearity of less than±1%are specifiedover6-9decades forplanardiffusedphotodiodes.Thelowerlimitofthephotocurrentlinearityisdeterminedbythenoisecurrent and the upper limit by the series resistance and the loadresistance. As the photocurrent increases, first the non-linearity setsin, gradually increasing with increasing photocurrent, and finally atsaturation level, the photocurrent remains constant with increasingincident lightpower. Ingeneral, thechange inphotocurrentgeneratedforthesamechangeinincidentlightpower,issmallerathighercurrentlevels,whenthephotodetectorexhibitsnon-linearity.Thelinearityrangecanslightlybeextendedbyapplyingareversebiastothephotodiode.

(continued)

4


Typical Spectral Response

Temperature Dependence of Responsivity


I-V CHARACTERISTICS

Thecurrent-voltagecharacteristicofaphotodiodewithnoincidentlightissimilartoarectifyingdiode.Whenthephotodiodeisforwardbiased,there isanexponential increase inthecurrent.Whenareversebias isapplied,asmallreversesaturationcurrentappears.Itisrelatedtodarkcurrentas:

( 7 )

where ID is the photodiode dark current, ISAT is the reverse saturationcurrent, q is the electron charge, VA is the applied bias voltage,kB=1.38x10-23J/K, is theBoltzmannConstantandT is theabsolutetemperature(273K=0ºC).

Figure 7. Characteristic I-V Curves of an OSI Optoelectronics photodiode for Photoconductive and Photovoltaic modes of operation. P0-P2 represent different light levels.

This relationship is shown in figure 7. Fromequation 7, three variousstatescanbedefined:

a) V=0,Inthisstate,thedarkcurrentIP=0.b) V=+V, In this state thecurrent increasesexponentially. This stateisalsoknownasforwardbiasmode.c) V=-V,Whenaverylargereversebiasisappliedtothephotodiode,thedarkcurrentbecomesthereversesaturationcurrent,ISat.

Illuminatingthephotodiodewithopticalradiation,shiftstheI-Vcurvebytheamountofphotocurrent(IP).Thus:

( 8 )

whereIPisdefinedasthephotocurrentinequation5.

Astheappliedreversebias increases, there isasharp increase in thephotodiodecurrent.Theappliedreversebiasatthispointisreferredtoasbreakdownvoltage.Thisisthemaximumappliedreversebias,belowwhich, the photodiode should be operated (also known asmaximumreverse voltage). Breakdown voltage, varies from one photodiode toanother and is usually measured, for small active areas, at a darkcurrentof10µA.

NOISE

Inaphotodiode,twosourcesofnoisecanbeidentified;ShotnoiseandJohnsonnoise:

Shot NoiseShotnoiseisrelatedtothestatisticalfluctuationinboththephotocurrentandthedarkcurrent.Themagnitudeoftheshotnoiseisexpressedastherootmeansquare(rms)noisecurrent:

( 9 )

Where q=1.6x10-19C, is the electron charge, IP is the photogeneratedcurrent, ID is the photodetector dark current and ∆f is the noisemeasurement bandwidth. Shot noise is the dominating source whenoperatinginphotoconductive(biased)mode.

Thermal or Johnson NoiseTheshuntresistanceinaphotodetectorhasaJohnsonnoiseassociatedwithit.Thisisduetothethermalgenerationofcarriers.Themagnitudeofthisgeneratednoisecurrentis:

( 10 )

Where kB=1.38 x 10-23 J/K, is the Boltzmann Constant, T, is theabsolute temperature in degrees Kelvin (273 K= 0 ºC), ∆f is thenoise measurement bandwidth and RSH , is the shunt resistance ofthe photodiode. This type of noise is the dominant current noise inphotovoltaic(unbiased)operationmode.

Note:AllresistorshaveaJohnsonnoiseassociatedwiththem,includingtheloadresistor.ThisadditionalnoisecurrentislargeandaddstotheJohnsonnoisecurrentcausedbythephotodetectorshuntresistance.

Total NoiseThetotalnoisecurrentgeneratedinaphotodetectorisdeterminedby:

( 11 )

Noise Equivalent Power (NEP)Noise Equivalent Power is the amount of incident light power on aphotodetector, which generates a photocurrent equal to the noisecurrent.NEPisdefinedas:

( 12 )

Where R is the responsivity in A/W and Itn is the total noise of thephotodetector. NEP values can vary from 10-11 W/√Hz for largeactive area photodiodes down to 10-15 W /√Hz for small active areaphotodiodes.

(continued)

5


Photodetector I-V Curves

6

TEMPERATURE EFFECTS

Allphotodiodecharacteristicsareaffectedbychangesintemperature.They include shunt resistance, dark current, breakdown voltage,responsivity and to a lesser extent otherparameters suchas junctioncapacitance.

Shunt Resistance and Dark Current:There are two major currents in a photodiode contributing to darkcurrentandshuntresistance.Diffusioncurrentisthedominatingfactorin a photovoltaic (unbiased) mode of operation, which determinesthe shunt resistance. It varies as the square of the temperature. Inphotoconductive mode (reverse biased), however, the drift currentbecomes the dominant current (dark current) and varies directly withtemperature. Thus, change in temperature affects the photodetectormoreinphotovoltaicmodethaninphotoconductivemodeofoperation.

In photoconductivemode the dark currentmay approximately doublefor every 10 ºC increase change in temperature. And in photovoltaicmode, shunt resistance may approximately double for every 6 ºCdecreaseintemperature.Theexactchangeisdependentonadditionalparameterssuchastheappliedreversebias,resistivityofthesubstrateaswellasthethicknessofthesubstrate.

Breakdown Voltage:For small active area devices, by definition breakdown voltage isdefinedasthevoltageatwhichthedarkcurrentbecomes10µA.Sincedarkcurrent increaseswithtemperature, therefore,breakdownvoltagedecreasessimilarlywithincreaseintemperature.

Responsivity:Effectsoftemperatureonresponsivityisdiscussedinthe“Responsivity”sectionofthesenotes.

BIASING

A photodiode signal can be measured as a voltage or a current.Current measurement demonstrates far better linearity, offset, andbandwidth performance. The generated photocurrent is proportionaltotheincidentlightpoweranditmustbeconvertedtovoltageusingatransimpedanceconfiguration.Thephotodiodecanbeoperatedwithorwithoutanapplied reversebiasdependingon theapplicationspecificrequirements. They are referred to as “Photoconductive” (biased) and“Photovoltaic”(unbiased)modes.

Photoconductive Mode (PC)Application of a reverse bias (i.e. cathode positive, anode negative)cangreatlyimprovethespeedofresponseandlinearityofthedevices.This isduetoincreaseinthedepletionregionwidthandconsequentlydecrease in junction capacitance. Applying a reverse bias, however,will increasethedarkandnoisecurrents.Anexampleoflowlightlevel/high-speedresponseoperated inphotoconductivemodeisshowninfigure8.

Inthisconfigurationthedetectorisbiasedtoreducejunctioncapacitancethusreducingnoiseandrisetime(tr).Atwostageamplificationisusedinthisexamplesinceahighgainwithawidebandwidthisrequired.Thetwo stages include a transimpedance pre-amp for current- to-voltageconversionandanon-invertingamplifierforvoltageamplification.Gainandbandwidth(f3dBMax)aredirectlydeterminedbyRF,perequations(13)and(14).Thegainofthesecondstageisapproximatedby1+R1/R2.Afeedbackcapacitor (CF)will limit thefrequencyresponseandavoidsgainpeaking.

Figure 8. Photoconductive mode of operation circuit example:Low Light Level / Wide Bandwidth

( 13 )

WhereGBPistheGainBandwidthProductofamplifier(A1)andCAistheamplifierinputcapacitance.

( 14 )

In low speed applications, a large gain, e.g. >10MΩ can be achievedbyintroducingalargevalue(RF)withouttheneedforthesecondstage.

Typicalcomponentsusedinthisconfigurationare:

In high speed, high light level measurements, however, a differentapproach is preferred. The most common example is pulse widthmeasurements of short pulse gas lasers, solid state laser diodes, oranyother similar shortpulse light source.Thephotodiodeoutput canbe either directly connected to an oscilloscope (Figure 9) or fed to afast response amplifier. When using an oscilloscope, the bandwidthofthescopecanbeadjustedtothepulsewidthofthelightsourceformaximum signal to noise ratio. In this application the bias voltage islarge.Twoopposingprotectiondiodesshouldbeconnectedtotheinputoftheoscilloscopeacrosstheinputandground.

Figure 9. Photoconductive mode of operation circuit example:High Light Level / High Speed Response

(continued)

OPA-637, OPA-846, OPA-847, or similar


7World Class Products - Light Sensing Solutions


To avoid ringing in the output signal, the cable between the detectorand the oscilloscope should be short (i.e. < 20cm) and terminatedwith a 50ohm load resistor (RL). Thephotodiode shouldbe enclosedin a metallic box, if possible, with short leads between the detectorand the capacitor, and between the detector and the coaxial cable.The metallic box should be tied through a capacitor (C1), with leadlength (L) less than2 cm,whereRL C1 > 10 ( is thepulsewidth inseconds).RS is chosen such thatRS <VBIAS / 10 IPDC,where IPDC is theDCphotocurrent.Bandwidthisdefinedas0.35/.Aminimumof10Vreverse bias is necessary for this application. Note that a bias largerthanthephotodiodemaximumreversevoltageshouldnotbeapplied.

Photovoltaic Mode (PV)The photovoltaic mode of operation (unbiased) is preferred when aphotodiode is used in low frequency applications (up to 350 kHz) aswellasultralowlightlevelapplications.Inadditiontoofferingasimpleoperational configuration, the photocurrents in this mode have lessvariationsinresponsivitywithtemperature.Anexampleofanultralowlightlevel/lowspeedisshowninfigure10.

Figure 10. Photovoltaic mode of operation circuit example: Ultra low level light / low speed

In this example, a FET input operational amplifier as well as a largeresistancefeedbackresistor(RF)isconsidered.Thedetectorisunbiasedtoeliminateanyadditionalnoisecurrent.Thetotaloutputisdeterminedbyequation (15)and theop-ampnoisecurrent isdeterminedbyRF inequation(16):

( 15 )

( 16 )

wherek=1.38x10-23J/KandTistemperatureinK.

Forstability,selectCFsuchthat

( 17 )

Operatingbandwidth,aftergainpeakingcompensationis:

( 18 )

Somerecommendedcomponentsforthisconfigurationare:

TheseexamplesoranyotherconfigurationsforsinglephotodiodescanbeappliedtoanyofOSIOptoelectronics’monolithic,commonsubstratelinerarrayphotodiodes.Theoutputofthefirststagepre-amplifierscanbeconnectedtoasampleandholdcircuitandamultiplexer.Figure11showstheblockdiagramforsuchconfiguration.

Figure 11. Circuit example for a multi-element, common cathode array

OPA111, OPA124, OPA627 or similar

8

PSD Characteristics

POSITION SENSING DETECTORS

Siliconphotodetectorsarecommonlyusedforlightpowermeasurementsinawiderangeofapplicationssuchas;

•Bar-codereaders,

•Laserprinters,

•Medicalimaging,

•Spectroscopyandmore.

There is another function, however,which utilizes the photodetectorsas optical position sensors. They, are widely referred to asPosition Sensing Detectors or simply PSD’s.Theapplicationsvaryfromhumaneyemovementmonitoring,3-Dmodelingofhumanmotiontolaser,lightsource,andmirrorsalignment.Theyarealsowidelyused inultra-fast,accurateautofocusingschemesforavarietyofopticalsystems,suchasmicroscopes,machine toolalignment,vibrationanalysisandmore.The position of a beam within fractions of microns can be obtainedusingPSD’s.Theyaredividedintotwofamilies:segmented PSD’sandlateral effect PSD’s.

Segmented PSD’sSegmented PSD’s, are common substrate photodiodes divided intoeithertwoorfoursegments(foroneortwo-dimensionalmeasurements,respectively),separatedbyagapordeadregion.Asymmetricalopticalbeamgenerates equal photocurrents in all segments, if positioned atthe center. The relative position is obtained by simplymeasuring theoutput current of each segment. They offer position resolution betterthan 0.1 µm and accuracy higher than lateral effect PSD’s due tosuperior responsivitymatchbetween theelements.Since thepositionresolutionisnotdependentontheS/Nofthesystem,asitisinlateraleffect PSD’s, very low light level detection is possible. They exhibitexcellent stabilityover timeand temperatureand fast response timesnecessary for pulsed applications. They are however, confined tocertainlimitations,suchasthelightspothastooverlapallsegmentsatalltimesanditcannotbesmallerthanthegapbetweenthesegments.It is important tohaveauniformintensitydistributionof the lightspotforcorrectmeasurements.Theyareexcellentdevices forapplicationslikenullingandbeamcentering.

Lateral Effect PSD’sLateral effect PSD’s, are continuous single element planar diffusedphotodiodeswithnogapsordeadareas.ThesetypesofPSD’sprovidedirectreadoutofalightspotdisplacementacrosstheentireactivearea.Thisisachievedbyprovidingananalogoutputdirectlyproportionaltoboth thepositionand intensityofa lightspotpresenton thedetectoractive area. A light spot present on the active area will generatea photocurrent, which flows from the point of incidence throughthe resistive layer to the contacts. This photocurrent is inverselyproportional to the resistancebetween the incident lightspotand thecontact.Whentheinputlightspotisexactlyatthedevicecenter,equalcurrentsignalsaregenerated.Bymovingthelightspotovertheactivearea,theamountofcurrentgeneratedatthecontactswilldeterminetheexactlightspotpositionateachinstantoftime.Theseelectricalsignalsareproportionatelyrelatedtothelightspotpositionfromthecenter.

Themainadvantageoflateral-effectdiodesistheirwidedynamicrange.Theycanmeasurethelightspotpositionallthewaytotheedgeofthesensor.Theyarealsoindependentofthelightspotprofileandintensitydistributionthateffects thepositionreading in thesegmenteddiodes.Theinputlightbeammaybeanysizeandshape,sincethepositionofthecentroidofthelightspotisindicatedandprovideselectricaloutputsignalsproportional to thedisplacement from thecenter.Thedevicescan resolvepositionsbetter than 0.5 µm. The resolution is detector /circuitsignaltonoiseratiodependent.

OSI Optoelectronics manufactures two types of lateral effect PSD’s. Duo-Lateral and Tetra-Lateral structures. Both structures are available in one and two-dimensional configurations.

Induo-lateral PSD’s, there are two resistive layers, one at the topand theotherat thebottomof thephotodiode.Thephotocurrent isdivided into twoparts ineach layer.Thisstructure typecanresolvelightspotmovementsoflessthat0.5µmandhaveverysmallpositiondetectionerror,allthewayalmosttotheedgeoftheactivearea.Theyalsoexhibitexcellentpositionlinearityovertheentireactivearea.

The tetra-lateral PSD’s, own a single resistive layer, in whichthe photocurrent is divided into two or four parts for one ortwo dimensional sensing respectively. These devices exhibit morepositionnon linearityatdistances faraway from thecenter,aswellaslargerpositiondetectionerrorscomparedtoduo-lateraltypes.

GLOSSARY OF TERMS:

Position Detection Error (PDE) or Position non-linearity is definedas the geometric variation between the actual position and themeasuredpositionoftheincidentlightspot.Itismeasuredover80%of the sensing length for singledimensionalPSD’s and64%of thesensingareafortwo-dimensionalPSD’s.Forallcalculations,thezeropointisdefinedastheelectricalcenter.ThisisthepointatwhichI1=I2.Theerroriscalculatedusingthefollowingequation:

( 19 )

WhereI1andI2arethephotocurrentsattheendsofthePSD,Listhesensingareahalf-length inµm,andX is theactualdisplacementoflightspotfromtheelectricalcenterinµm.

Percentage Position Non-linearity is determined by dividing thepositiondetectionerrorbythetotallengthofthesensingarea.

Interelectrode Resistance is the resistance between the two endcontactsinoneaxis,measuredwithillumination.

Position Detection Thermal Drift is the position drift with changeof temperature. It is the change in position divided by the totallength.Itisdefinedwithin80%oflengthor64%oftheareafortwo-dimensionalPSD’s.

Position Resolution is defined as the minimum detectabledisplacement of a spot of light on the detector active area. Theresolution is limited by the signal to noise ratio of the system. Itdependsonlightintensity,detectornoise,andelectronicsbandwidth.Position resolutions in excess of one part in tenmillion have beenachievedwithOSIOptoelectronicslateraleffectPSD’s.


Lateral Effect PSD’sThe one dimensional lateral effect measurements are the same forduolateral and tetra-lateral structures, since they both have twocontactson topwithacommoncontactat thebottom. In tetra-lateraldevices,however,thecommoncontactistheanodewithtwocathodeson top, thus making them a positive current generator. In duo-lateraldevices there are two anodes on top with a common cathode atthe bottom. Figure 13 shows a typical circuit set up used with one-dimensionallateralPSD’s.

Figure 13. Typical circuit used with one dimensional lateral effect PSD’s

In this configuration the outputs from the first stage are summedandsubtracted in the second stage and finally divided by the divider inthe final stage. The summation, subtraction and the division can beperformedbysoftwareaswell.Thepositionisgivenas:

( 21 )

ThesamecomponentsastheoneusedinsegmentedphotodiodescanbeusedwithR2varyingfrom1kΩto100kΩ.

For high-speed applications, the junctions can be reverse biasedwith a small gain (RF). For low frequency applications, however, thephotodiodecanbeleftunbiasedandthegain(RF),canbeashighas100MΩ.Thefeedbackcapacitorstabilizesthefrequencydependenceofthegainandcanvaryfrom1pFto10µF.ThegaininthefirststageamplifierisIPxRF,andthegainofthesecondstageisunity.

(continued)

POSITION CALCULATIONS

Segmented PSD’sFigure 12 shows a typical circuit, used with OSI Optoelectronicssegmentedphotodiodes.

Figure 12. Typical circuit used with segmented photodiodes

TheXandYpositionsofthelightspotwithrespecttothecenteronaquadrantphotodiodeisfoundby:

( 20 )

Where A, B, C, and D are the photocurrents measured by eachsector. The recommended components for this circuit are applicationspecific.However, the following components arewidely used inmostapplications:

Thesamecircuitcanbeusedforone-dimensional(bi-cell)measurements.

PSD Characteristics

10

Two Dimensional Duo-Lateral PSD’sThe two dimensional duo-lateral PSD’s with two anodes on top andtwocathodesonthebacksurfaceofthephotodiodemeasurepositionsin two different directions, respectively. They provide a continuousposition reading over the entire active area, with accuracy higherthan the tetra-lateralPSD’s.Figure 14showsa typicalcircuit for two-dimensionalduo-lateralPSD’s.

Figure 14. Typical Circuit used with two-dimensional duo-lateral PSD’s

For high-speed applications, the cathodes are usually forward biasedwhile the anodes are reverse biased. This extends the bias rangethat is normally limited by the maximum reverse voltage. The samecomponents as the one-dimensional PSD’s are recommended. Theoutputisasfollows:

( 22 )

Tetra-Lateral PSD’sIn a two-dimensional tetra-lateral PSD there are four cathodes andone common anode. Similar to other PSD’s, the signals from thedetector are converted to voltage in the first stageand then summedandsubtractedinthesecondstageandthenfinallydividedinthefinalstage.ThisisshowninFigure 15.

For high-speed applications, the anode is reverse biased and thefeedback resistor (RF) shall be chosen small. Additional gain can beachievedbyadditionalstages.Therecommendedcomponentsandtheoutputaresimilartotwo-dimensionalduo-lateraldevices.

Figure 15. Typical Circuit used with two dimensional tetra-lateral PSD’s

PSD Characteristics


Application Notes and Reading Sources

The following application notes are available for more technical information about specific uses and applications:

1.Siliconphotodiodescomeintotheirown

2.Siliconphotodiodes-physicsandtechnology(*)

3.Noiseandfrequencyresponseofsiliconphotodiodeoperationalamplifiercombination

4.Suitabilityofsiliconphotodiodesforlaseremissionmeasurements(*)

5.MeasuringLEDoutputsaccurately

6.Radiometricandphotometricconceptsbasedonmeasurementtechniques

7.Siliconphotodiodedevicewith100%externalquantumefficiency

8.Lateral-effectphotodiodes(*)

9.Techniquesforusingthepositionsensitivityofsiliconphotodetectorstoprovideremotemachinecontrol

10.Practicalelectro-opticsdeflectionmeasurementssystem

11.Non-contactopticalpositionsensingusingsiliconphotodetectors

12.Continuouspositionsensingseries(LSC,SC)

13.Usingphotodetectorsforpositionsensing(*)

14.High-precision,widerange,dualaxisanglemonitoringsystem

15.Realtimebiomechanicalpositionsensingbasedonalateraleffectphotodiode(*)

16.Anewopticaltransducertomeasuredampedharmonicmotion

17.Quantumefficiencystabilityofsiliconphotodiodes

18.Neutronhardnessofphotodiodesforuseinpassiverubidiumfrequencystandards(*)

19.Theeffectofneutronirradiationonsiliconphotodiodes

20.Stable,highquantumefficiency,UV-enhancedsiliconphotodiodesbyarsenicdiffusion

21.Stable,highquantumefficiencysiliconphotodiodesforvacuum-UVapplications

22.Stabilityandquantumefficiencyperformanceofsiliconphotodiodedetectorsinthefarultraviolet

23.Siliconphotodiodeswithstable,near-theoreticalquantumefficiencyinthesoftX-rayregion

(*)TheseFilesAreDownloadablefromtheOSIOptoelectronics,Inc.website.

For any of the above documents, request them by number and write to:

OSI Optoelectronics 12525 Chadron Avenue Hawthorne, CA 90250

Telephone: +1 310-978-0516

FAX: +1 310-644-1727

E-mail: [email protected] [email protected]

Web Site: www.osioptoelectronics.com

Recommended Sources For Further Reading:Graeme,Jerald,PhotodiodeAmplifiers,McGrawHill,NewYork,1996

Dereniak,E.L.,andD.G.Crowe,OpticalRadiationDetectors,Wiley,NewYork,1984.

Keyes,R.J.,OpticalandInfraredDetectors,Vol.19,TopicsinAppliedPhysics,Springer-Verlag,NewYork,1980.

Kingston,R.H.,DetectionofOpticalandInfraredRadiation,Springer-Verlag,NewYork1978.

Kruse,P.W.,L.D.McGlaughlin,andR.B.McQuistan,ElementsofInfraredTechnology,Wiley,NewYork,1963.

Sze,S.M.,PhysicsofSemiconductorDevices,2nded.,Wiley-Interscience,NewYork,1981.

Willardson,R.K.,andA.C.Beer,SemiconductorsandSemimetals,AcademicPress,NewYork,1977.

Wolfe,W.L.andG.J.Zissis,TheInfraredHandbook,SuperintendentofDocuments,WashingtonD.C.,1979.

In addition to our wide variety of standard photodiodes appearing in the following pages,

a majority of OSI Optoelectronics’ products include a broad range of custom photodiodes

and custom value-added products.

For Further AssistancePlease Call One of Our Experienced

Sales and Applications Engineers

310-978-0516

• High Reliability, Military and Aerospace Detectors per Applicable MIL-STDs.

• High Energy Particle Detectors

• Detector / Hybrid Combinations (Thick, Thin and Combifilm Ceramics)

• Detector / Filter Combinations

• Detector / Emitter Combinations

• Detector / PCB Combinations

• Detector / Scintillator Crystal Combinations

• Color Temperature Detectors

• Low Cost Lead Frame Molded Detectors

• Opto Switches and Interrupters

• Detector / Thermo-Electric Cooler Combinations

• Surface Mount Packages

• Custom Position Sensing Detectors

• Multi-Element Array (1D and 2D Configurations)

Our strong design and creative engineering group

can provide services from concept to final manufacture.

To find out more visit us at

www.osioptoelectronics.com

*Most of our standard catalog products are RoHS Compliant. Please contact us for details.

Sta

nd

ard

Pho

tod

ete

cto

r Pro

ducts

Electro-O

ptical Sp

ecificatio

ns an

d D

esign

No

tes

DISCLAIMER Information in this catalog is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice.

0 5 10 15 20 25


0 5 10 15 20 25

Photoconductive SeriesPlanar Diffused Silicon Photodiodes

FEATURES •HighSpeedResponse •LowCapacitance •LowDarkCurrent •WideDynamicRange •HighResponsivity

APPLICATIONS •PulseDetectors •OpticalCommunications •BarCodeReaders •OpticalRemoteControl •MedicalEquipment •HighSpeedPhotometry

0 5 10 15 20 250 5 10 15 20 25

Typical Spectral Response Typical Capacitance vs. Reverse Bias

Typical Dark Current vs. Temperature Typical Dark Current vs. Reverse Bias

ThePhotoconductive Detector Seriesaresuitable forhighspeedandhighsensitivityapplications.Thespectralrangeextendsfrom350to1100

nm,makingthesephotodiodesidealforvisibleandnearIRapplications,

including suchACapplications as detection of pulsed LASER sources,

LEDs,orchoppedlight.

To achieve high speeds, these detectors should be reverse biased.

Typicalresponsetimesfrom10nsto250nscanbeachievedwitha10V

reversebias, for example.Whena reversebias is applied, capacitance

decreases (as seen in the figure below) corresponding directly to an

increaseinspeed.

As indicated in the specification table, the reverse bias should not exceed 30 volts. Higher bias voltages will result in permanent damage to the detector.

Sincea reversebiasgeneratesadditionaldarkcurrent, thenoise in the

devicewillalsoincreasewithappliedbias.Forlowernoisedetectors,the

PhotovoltaicSeriesshouldbeconsidered.

Refer to the Photoconductive Mode (PC) paragraph in the “Photodiode Characteristics” section of this catalog for detailed information on electronics set up.

14

Photoconductive SeriesTypical Electro-Optical Specifications at TA=23ºC

‡The‘I’suffixonthemodelnumberisindicativeofthephotodiodechipbeingisolatedfromthepackagebyanadditionalpinconnectedtothecase.¶Formechanicaldrawingspleaserefertopages61thru73.*Non-condensingtemperatureandstoragerange,Non-condensingenvironment.

«Minimumorderquantitiesapply

Mod

el N

um

ber

Active Area

Pea

k

Res

pon

sivi

tyW

avel

ength

Responsivityat λp

Capacitance(pF)

DarkCurrent (nA)

NEP(W/Hz)

ReverseVoltage

(V)

RiseTime(ns)

Temp.*Range(˚C)

PackageStyle ¶

Are

a (m

m2)

Dim

ensi

ons

(mm

)

λp(nm) (A/W) 0 V -10 V -10 V -10V

970nm

-10V632nm50 Ω

Oper

atin

g

Sto

rage

typ. min. typ. typ. typ. typ. max. typ. max. typ.

‘D’ Series, Metal Package

PIN-020A 0.20 0.51 φ

970 0.60 0.65

4 1 0.01 0.15 2.8 e-15

30

6

-40

~ +

100

-55

~ +

125

1 / TO-18 PIN-040A 0.81 1.02 φ 8 2 0.05 0.50 6.2 e-15 8

PIN-2DI ‡ 1.1 0.81 x 1.37 25 5 0.10 1.0 8.7 e-15

10 4 / TO-18

PIN-3CDI3.2 1.27 x

2.54 45 12 0.15 2 1.1 e-14PIN-3CD 7 / TO-18

PIN-5DI5.1 2.54 φ 85 15 0.25 3 1.4 e-14 12

2 / TO-5

PIN-5D 5 / TO-5

PIN-13DI13 3.6 sq 225 40 0.35 6 1.6 e-14 14

2 / TO-5

PIN-13D 5 / TO-5

PIN-6DI16.4 4.57 φ 330 60 0.5 10 1.9 e-14 17

3 / TO-8

PIN-6D 6 / TO-8

PIN-44DI44 6.6 sq 700 130 1 15 2.8 e-14 24

3 / TO-8

PIN-44D 6 / TO-8

PIN-10DI100 11.28 φ 1500 300 2 25 3.9 e-14 43

-10

~

+60

-20

~

+70

10/ Lo-Prof

PIN-10D 11 / BNC

PIN-25D 613 27.9 φ 9500 1800 15 1000 1.1 e-13 250 12 / BNC

‘O’ Series, Metal Package

OSD1-0 1 1.0 sq

900 0.47 0.54

12 3 1 3 4.5 e-14

50

10

-25

~ +

75

-40

~ +

100

7 / TO-18

OSD5-0 5 2.5 φ 50 8 5 10 1.0 e-13 8 5 / TO-5

OSD15-0 15 3.8 sq 150 20 8 15 1.3 e-13 9 5 / TO-5

OSD60-0 58 7.6 sq 600 75 15 50 1.7 e-13 14 69 / TO-8

OSD100-0A 100 11.3 φ 1000 130 30 70 2.5 e-13 19 55 /Special

‘D’ Series, Plastic Package

PIN-220D« 200 10 x 20 970 0.60 0.65 3200 600 5 100 6.2 e-14 30 75

-10

~

+60

20 ~

+

70 27 / Plastic


Photovoltaic SeriesPlanar Diffused Silicon Photodiodes

FEATURES •UltraLowNoise •HighShuntResistance •WideDynamicRange •BlueEnhanced

APPLICATIONS •Colorimeters •Photometers •SpectroscopyEquipment •Fluorescence

The Photovoltaic Detector series is utilized for applicationsrequiring high sensitivity andmoderate response speeds,with an

additionalsensitivityinthevisible-blueregionfortheblueenhanced

series.Thespectralresponserangesfrom350to1100nm,making

the regular photovoltaic devices ideal for visible and near IR

applications. For additional sensitivity in the 350 nm to 550 nm

region,theblueenhanceddevicesaremoresuitable.

These detectors have high shunt resistance and low noise, and

exhibit long term stability. Unbiased operation of these detectors

offers stability under wide temperature variations in DC or low

speedapplications.Forhigh light levels (greater than10mW/cm2),

the Photoconductive Series detectors should be considered for

betterlinearity.

These detectors are not designed to be reverse biased! Veryslightimprovementinresponsetimemaybeobtainedwithaslight

bias. Applying a reverse bias of more than a few volts (>3V) will

permanently damage the detectors. If faster response times are

required,thePhotoconductiveSeriesshouldbeconsidered.

Refer to the Photovoltaic Mode (PV) paragraph in the “Photodiode Characteristics” section of this catalog for detailed information on electronics set up.

Typical Spectral Response Typical Shunt Resistance vs. Temperature

16

Photovoltaic SeriesTypical Electro-Optical Specifications at TA=23ºC

‡The“I”suffixonthemodelnumberisindicativeofthephotodiodechipbeingisolatedfromthepackagebyanadditionalpinconnectedtothecase.Formechanicaldrawingspleaserefertopages61thru73.†OperatingTemperature:-40to+100ºC,StorageTemperature:-55to+125ºC.*Non-CondensingtemperatureandStorageRange,Non-CondensingEnvironment.

Mod

el N

um

ber

Active Area

Pea

k

Res

pon

sivi

tyW

avel

ength

Responsivityat λp

Capacitance(pF)

ShuntResistance

(GΩ)

NEP(W/Hz)

RiseTime(ns)

Temp.*Range(˚C)

PackageStyle ¶

Are

a (m

m2)

Dim

ensi

ons

(mm

)λp

(nm) (A/W) 0 V -10 mV 0V970 nm

0 V632 nm

50 Ω

Oper

atin

g

Sto

rage

typ. min. typ. max. min. typ. typ. typ.

‘DP’ Series, Metal PackageCD-1705 0.88 0.93 sq 850

0.55 0.60

70

1.0 10 2.1 e-15

2000

-40

~ +

100

-55

~ +

125

68 / Plastic

PIN-2DPI ‡ 1.1 0.81 x 1.37

970

15030

4 / TO-18

PIN-125DPL 1.6 1.27 sq. 160 8 / TO-18

PIN-3CDPI3.2 1.27 x 2.54 320 0.5 5.0 3.0 e-15 50

4 / TO-18

PIN-3CDP 7 / TO-18

PIN-5DPI5.1 2.54 φ 500 0.4 4.0 3.4 e-15 60

2 / TO-5

PIN-5DP 5 / TO-5

PIN-13DPI13 3.6 sq 1200 0.35 3.5 3.6 e-15 150

2 / TO-5

PIN-13DP 5 / TO-5

PIN-6DPI16.4 4.57 φ 2000 0.2 2.0 3.9 e-15 220

3 / TO-8

PIN-6DP 6 / TO-8

PIN-44DPI44 6.6 sq 4300 0.1 1.0 4.8 e-15 475

3 / TO-8

PIN-44DP 6 / TO-8

PIN-10DPI100 11.28 φ 9800 0.05 0.2 6.8 e-15 1000

-10

~ +

60

-20

~ +

70 10/ Lo-Prof

PIN-10DP 11 / BNC

PIN-25DP 613 27.9 φ 60000 0.002 0.1 3.0 e-14 6600 12 / BNC

‘DP’ Series, Plastic Package §

PIN-220DP 200 10 x 20 970 0.55 0.60 20000 0.02 0.2 1.2 e-14 2200 -10 ~ +60

-20 ~ +70 27 / Plastic

Super Blue Enhanced ‘DP/SB’ Series, (All Specifications @ λ= 410 nm. VBIAS= 0V, RL= 50Ω)

Model No.

ActiveArea/Dimensions

Responsivity(A/W)

Capacitance(pF)

Rsh(MΩ)

NEP (W/√Hz)

Operating Current(mA)

Rise Time(µs)

-10

~ +

60

-20

~ +

70

PackageStyle ¶

mm2 mm min. typ. typ. min. typ. max. typ.

PIN-040DP/SB 0.81 1.02 φ

0.15 0.20

60 600 2.0 e-14 0.5 0.02 1 / TO-18

PIN-5DP/SB † 5.1 2.54 φ 450 150 5.2 e-14 2.0 0.2 5 / TO-5

PIN-10DP/SB100 11.28 φ 8800 10 2.0 e-13 10.0 2.0

11 / BNC

PIN-10DPI/SB 10 / Metal

PIN-220DP/SB 200 10 x 20 17000 5 2.9 e-13 10.0 4.0 27 / Plastic

‘5T’ Series, Blue

Model No.

ActiveArea/Dimensions

Responsivity(A/W) 436nm

Capacitance(pF) 0V

Rsh(MΩ)

NEP (W/√Hz)

Dark Current(nA)

Rise Time(µs)

-25

~ +

75

-45

~ +

100

PackageStyle ¶

mm2 mm min. typ. max min. typ. max. typ.

OSD1-5T 1.0 1.0 sq

0.18 0.21

35 250 2.5 e-14 1.0 7 7 / TO-18

OSD3-5T 3.0 2.5 x 1.2 80 100 3.0 e-14 2.0 9 7 / TO-18

OSD5-5T 5.0 2.5 φ 130 100 3.3 e-14 2.0 9 5 / TO-5

OSD15-5T 15.0 3.8 sq 390 50 5.6 e-14 10.0 12 5 / TO-5

OSD60-5T 62.0 7.9 sq 1800 3 2.1 e-13 25.0 30 69 / TO-8

OSD100-5TA 100.0 11.3 φ 2500 2 2.5 e-13 30.0 45 55 / Special


UV Enhanced SeriesInversion Layer and Planar Diffused Silicon Photodiodes

FEATURES •Inversionseries: 100%InternalQE •UltraHighRSH

•PlanarDiffusedSeries: IRSuppressed HighSpeedResponse HighStability •ExcellentUVresponse

APPLICATIONS •PollutionMonitoring •MedicalInstrumentation •UVExposureMeters •Spectroscopy •WaterPurification •Fluorescence

OSI Optoelectronics offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the UV region of electromagnetic spectrum.

Inversion layer structure UV enhanced photodiodes exhibit 100% internal

quantumefficiencyandarewellsuitedforlowintensitylightmeasurements.

They have high shunt resistance, low noise and high breakdown voltages.

Theresponseuniformityacrossthesurfaceandquantumefficiencyimproves

with5to10voltsappliedreversebias.Inphotovoltaicmode(unbiased),the

capacitance is higher than diffused devices but decreases rapidly with an

appliedreversebias.Photocurrentnon-linearitysetsinatlowerphotocurrents

forinversionlayerdevicescomparedtothediffusedones.Below700nm,their

responsivitiesvarylittlewithtemperature.

Planar diffused structure UV enhanced photodiodes show significant

advantages over inversion layer devices, such as lower capacitance and

higher response time.Thesedevicesexhibit linearity ofphotocurrent up to

higher light input power compared to inversion layer devices. They have

relativelylowerresponsivitiesandquantumefficienciescomparedtoinversion

layerdevices

There are two types of planar diffused UV enhanced photodiodes

available:UVDQandUVEQ.Bothserieshavealmostsimilarelectro-optical

characteristics,except in theUVEQseries,where thenear IR responsesof

thedevicesaresuppressed.Thisisespeciallydesirableifblockingthenear

IRregionofthespectrumisnecessary.UVDQdevicespeakat970nmand

UVEQdevicesat720nm (seegraph).Bothseriesmaybebiased for lower

capacitance, faster response and wider dynamic range. Or they may be

operated in thephotovoltaic (unbiased)mode forapplications requiring low

drift with temperature variations. The UVEQ devices have a higher shunt

resistance than their counterparts of UVDQ devices, but have a higher

capacitance.

ThesedetectorsareidealforcouplingtoanOP-AMPinthecurrent

modeconfigurationasshown.

18

Inversion Layer UV Enhanced PhotodiodesTypical Electro-Optical Specifications at TA=23ºC

‡The‘L’suffixonthemodelnumberisindicativeofthephotodiodechipbeingisolatedfromthepackagebyanadditionalpinconnectedtothecase.§Thephotodiodechipsin“FIL”seriesareisolatedinalowprofileplasticpackage.Theyhavealargefieldofviewaswellasinlinepins.¶Formechanicaldrawingspleaserefertopages61thru73.*Non-CondensingtemperatureandStorageRange,Non-CondensingEnvironment.


Mod

el N

um

ber

Active Area Responsivity(A/W)

Capacitance(pF)

ShuntResistance

(MΩ)

NEP(W/Hz) Reverse

Voltage(V)

RiseTime(μs)

OperatingCurrent(mA)

Temp.*Range(˚C)

PackageStyle ¶

Are

a (m

m2)

Dim

ensi

ons

(mm

) 254 nm 0 V -10 mV 0V254 nm

0 V254 nm

50 Ω0 V

Oper

atin

g

Sto

rage

min. typ. max. min. typ. typ. max. typ. typ.

‘UV Enhanced’ Series, Inversion Layer, Metal PackageUV-001« 0.8 1.0 φ

0.09 0.14

60 250 500 6.4 e-14

5

0.2

0.1

-20

~ +

60

-55

~ +

80 5 / TO-5UV-005 5.1 2.54 φ 300 80 200 1.0 e-13 0.9

UV-015 15 3.05 x 3.81 800 30 100 1.4 e-13 2.0

UV-20 20 5.08 φ 1000 25 50 2.0 e-13 2.06 / TO-8

UV-35 35 6.60 x 5.33 1600 20 30 1.7 e-13 3.0

UV-5050 7.87 φ 2500 10 20 2.6 e-13 3.5

-10

~ +

60

-20

~ +

70

11 / BNC

UV-50L ‡ 10 / Lo-Prof

UV-100100 11.28 φ 4500 5 10 4.5 e-13 5.9

11 / BNC

UV-100L 10 / Lo-Prof

‘UV Enhanced’ Series, Inversion Layer, Plastic Package §

UV-35P 35 6.60 x 5.33

0.09 0.14

1600 15 30 1.7 e-13

5

3.0

0.1

-10

~ +

60

-20

~ +

70 25 / Plastic

FIL-UV50 50 7.87 φ 2500 10 20 2.1 e-13 3.5 15 / Plastic

Typical Shunt Resistance vs. Temperature Typical Spectral Response


Planar Diffused UV Enhanced PhotodiodesTypical Electro-Optical Specifications at TA=23ºC

¶Formechanicalspecificationspleaserefertopages61thru73.*Non-CondensingtemperatureandStorageRange,Non-CondensingEnvironment.

LEFT

Typ. Responsivity with Quartz Window (TA= 25˚C)

Mod

el N

um

ber

Active Area

PeakWavelength

λ P (nm)

Responsivity(A/W)

Capacitance(pF)

ShuntResistance

(GOhm)

NEP(W/Hz)

ReverseVoltage

(V)

RiseTime(μs)

Temp.*Range(˚C)

PackageStyle ¶

Are

a (m

m2)

Dim

ensi

ons

(mm

)

200nm

633nm Peak 0 V -10 mV 0V

200 nm

0 V1kOhm

Op

era

tin

g

Sto

rag

e

typ. typ. typ. typ. min. typ. typ. max. typ.

UV-005DQ 5.7 2.4 x 2.4

980 0.12 0.33 0.5

65 0.3 1 3.6 E-14

5

0.2

-20

~ +

60

-55

~ +

80

5 / TO-5

UV-013DQ 13 3.6 x 3.6 150 0.2 0.8 4.1 E-14 0.5 5 / TO-5

UV-035DQ 34 5.8 x 5.8 380 0.1 0.4 5.8 E-14 1 6 / TO-8

UV-100DQ 100 10 X 10 1100 0.04 0.2 8.2 E-14 3 11 /BNC

UV-005DQC 5.7 2.4 x 2.4

980 0.12 0.33 0.5

65 0.3 1 3.6 E-14

5

0.2

-20

~ +

60

-20

~ +

80

25 /CeramicUV-035DQC 34 5.8 x 5.8 380 0.1 0.4 5.8 E-14 1

UV-100DQC 100 10 X 10 1100 0.04 0.2 8.2 E-14 3

UV-005EQ 5.7 2.4 x 2.4

720 0.12 0.34 0.36

140 2 20 8.2 E-15

5

0.5

-20

~ +

60

-55

~ +

80

5 / TO-5

UV-013EQ 13 3.6 x 3.6 280 1 10 1.1 E -14 1 5 / TO-5

UV-035EQ 34 5.8 x 5.8 800 0.5 5 1.6 E -14 2 6 / TO-8

UV-100EQ 100 10 X 10 2500 0.2 2 2.6 E -14 7 11 /BNC

UV-005EQC 5.7 2.4 x 2.4

720 0.12 0.34 0.36

140 2 20 8.2E-15

5

0.5

-20

~ +

60

-20

~ +

80

25 /CeramicUV-035EQC 34 5.8 x 5.8 800 0.5 5 1.6 E-14 2

UV-100EQC 100 10 X 10 2500 0.2 2 2.6E -14 7

‘UV-DQC’ Series Planar Diffused, Ceramic Package, Quartz Window

‘UV-EQ’ Series Planar Diffused, Metal Package, Quartz Window

‘UV-EQC’ Series Planar Diffused, Ceramic Package, Quartz Window

‘UV-DQ’ Series Planar Diffused, Metal Package, Quartz Window

0 1 2 3 4 5

24

20

16

12

8 4

0

Typ. Capacitance vs. Reverse Bias (TA= 23˚C, f=1MHz)

UV-EQ Series

UV-EQ SeriesUV-DQ Series

UV-DQ Series

20

High Speed Silicon PhotodiodesHigh Speed Silicon Series

FEATURES •LowDarkCurrent •LowCapacitance •TO-46Package •w/LensedCap •SubnsResponse

APPLICATIONS •VideoSystems •ComputersandPeripherals •IndustrialControl •GuidanceSystems •LaserMonitoring

OSI Optoelectronics High Speed Silicon series aresmallareadevicesoptimized for

fastresponsetimeorHighbandwithapplications.The BPX-65complementstherestof

thehighspeedgroupwithanindustrystandard.

Thespectralrangeforthesedevicesgoesfrom350nmto1100nm.Theresponsivityand

responsetimeareoptimizedsuchthattheHRseriesexhibitapeakresponsivityof0.50

A/Wat800nmandtypicalresponsetimesofafewhundredpicosecondsat-5V.

Note that for all high-speed photodetectors, a reverse bias is required to achieve the

fastestresponsetimes.However,thereversebiasshouldbelimitedtomaximumreverse

voltage specified to avoid damage to the detector. Output signals can be measured

directlywithanoscilloscopeorcoupledtohighfrequencyamplifiersasshowninfigure

10ofthePhotodiodeCharacteristicssectionofthecatalog.AllpartsintheHigh-Speed

siliconseriesareavailablewithaflatwindoworballlens(L).



Typical Frequency Response vs. Reverse Bias

Typical Frequency Response vs. Reverse Bias


High Speed Silicon SeriesTypical Electro-Optical Specifications at TA=23ºC

¶Formechanicaldrawing,pleaserefertopages61thru73.*ResponsivitiesaremeasuredforFlatwindowdevices.L-ReferstodeviceswithaBall-typelenscap.Chipcenteringiswithin+/-0.005”withrespecttoODoftheHeader.**Non-CondensingtemperatureandStorageRange,Non-CondensingEnvironment.

Mod

el N

um

ber

Active Area

Pea

k W

avel

ength

(nm

)

Responsivity(A/W)

Capacitance(pF) ‡

Dark Current(nA) ‡

NEP(W/Hz) Reverse

Voltage(V)

RiseTime(ns)

Temp.**Range(˚C)

PackageStyle ¶

Are

a (m

m2)

Dim

ensi

ons

(mm

)

830nm 830 nm 830 nm

50 Ω

Oper

atin

g

Sto

rage

min. typ. typ. typ. typ. max. typ.

High Responsivity Series (VBIAS=-5 V)

PIN-HR005PIN-HR005L* 0.01 0.127 φ

800 0.45* 0.50*

0.8 0.03 0.8 5.0 e-15

15

0.60

-25

~ +

85

-40

~ +

100

9 / TO-1816 / TO-18

(L - BallLens Cap)

PIN-HR008PIN-HR008L* 0.03 0.203 sq 0.8 0.03 0.8 5.0 e-15 0.60

PIN-HR020PIN-HR020L* 0.20 0.508 φ 1.8 0.06 1.0 7.1 e-15 0.80

PIN-HR026PIN-HR026L* 0.34 0.660 φ 2.6 0.1 1.5 1.0 e-14 0.90

PIN-HR040PIN-HR040L* 0.77 0.991 φ 4.9 0.3 2.0 1.9 e-14 1.0

BPX-65 (VBIAS=-20 V)

BPX-65 1.0 1.0 sq 900 0.45 0.5 3.0 0.5 5.0 2.3 e-14 50 2.0 7 / TO-18

max.

Typical Spectral Response Typical Spectral Response

22

Soft X-Ray, Deep UV Enhanced SeriesInversion Layer Silicon Photodiodes

FEATURES •DirectDetection •NoBiasNeeded •HighQuantumEfficiency •LowNoise •HighVacuumCompatible •CryogenicallyCompatible •0.070nmto1100nm WavelengthRange

APPLICATIONS •ElectronDetection •MedicalInstrumentation •Dosimetry •RadiationMonitoring •X-raySpectroscopy •ChargedParticleDetection

OSI Optoelectronics’ 1990 R&D 100 award winning X-UV detector seriesareauniqueclassofsiliconphotodiodesdesignedforadditionalsensitivityintheX-Ray

region of the electromagnetic spectrumwithout use of any scintillator crystals or

screens.Overawiderangeofsensitivityfrom200nmto0.07nm(6eVto17,600eV),

oneelectron-holepair iscreatedper3.63eVof incidentenergywhichcorresponds

toextremelyhighstablequantumefficienciespredictedbyE(ph)/3.63eV(Seegraph

below).Formeasurementof radiationenergiesabove17.6keV, refer to the “Fully

DepletedHighSpeedandHighEnergyRadiationDetectors”section.

A reverse bias can be applied to reduce the capacitance and increase speed of

response. In the unbiased mode, these detectors can be used for applications

requiring low noise and low drift. These detectors are also excellent choices for

detectinglightwavelengthsbetween350to1100nm.

Thedetectorscanbecoupledtoachargesensitivepreamplifierorlow-noiseop-amp

asshowninthecircuitontheoppositepage.

Typical Quantum Efficiency

Soft X-Ray, Deep UV Enhanced PhotodiodesTypical Electro-Optical Specifications at TA=23ºC


Circuit example In this circuit example, the pre-amplifier is a FET input op-amp or acommercialchargesensitivepreamplifier.Theycanbefollowedbyoneormore amplification stages, if necessary. The counting efficiency isdirectly proportional to the incident radiation power. The reverse biasvoltagemust be selected so that the best signal-to-noise ratio isachieved. Forlownoiseapplications,allcomponentsshouldbeenclosedinametalbox.Also,thebiassupplyshouldbeeithersimplebatteriesoraverylowrippleDCsupply.

Amplifier: OPA-637,OPA-27orsimilarRF: 10MΩto10GΩ RS: 1MΩ;SmallerforHighCountingRatesCF: 1pFCD: 1pFto10µF

OUTPUT VOUT = Q / CF WhereQistheChargeCreatedByOnePhotonorOneParticle

¶Formechanicaldrawingspleaserefertopages61thru73.AllXUVdevicesaresuppliedwithremovablewindows.*Non-CondensingtemperatureandStorageRange,Non-CondensingEnvironment.

Mod

el N

um

ber

Active Area Capacitance(nF)

Shunt Resistance(MΩ)

NEP(W/Hz)

Temp. Range*(°C)

PackageStyle ¶

Are

a (m

m2 )

Dim

ensi

on(m

m)

0 V -10 mV 0V200 nm

Oper

atin

g

Sto

rage

typ. max. min. typ. typ. max.

‘XUV’ Series Metal Package

XUV-005 5 2.57 φ 0.3 0.5 200 2000 2.9 e -15 9.1 e -15

-20

~ +

60

-20

~ +

80

22 / TO-5

XUV-020 20 5.00 φ 1.2 1.6 50 500 5.8 e -15 1.8 e -14

23 / TO-8XUV-035 35 6.78 x 5.59 2 3 30 300 7.4 e -15 2.3 e -14

XUV-100 100 11.33 φ 6 8 10 100 7.4 e -15 4.1 e -14 28 / BNC

‘XUV’ Series Ceramic Package

XUV-50C 50 8.02 φ 2 3 20 200 9.1 e -15 2.9 e -14

-20

~ +

60

-20

~ +

80

25 / Ceramic

XUV-100C100 10.00 sq 6 8 10 100 1.3 e -14 4.1 e -14 25 / Ceramic

24

High Breakdown Voltage, Fully Depleted SeriesLarge Active Area Photodiodes

FEATURES Large Active Area High Speed Detectors •LargeActiveArea •FullyDepleteable •FastResponse •UltraLowDarkCurrent •LowCapacitance

Large Active Area Radiation Detectors •LargeActiveArea •ScintillatorMountable •FullyDepleteable •UltraLowDarkCurrent •LowCapacitance •HighBreakdownVoltage

APPLICATIONS Large Active Area High Speed Detectors •LaserGuidedMissiles •LaserWarning •LaserRangeFinder •LaserAlignment •ControlSystems

Large Active Area Radiation Detectors •ElectronDetection •MedicalInstrumentation •HighEnergySpectroscopy •ChargedParticleDetection •HighEnergyPhysics •NuclearPhysics

Direct High Energy Radiation Measurement:

Both PIN-RD100 and PIN-RD100A, can also be used without any epoxy

resinorglasswindowfordirectmeasurementofhighenergyradiationsuch

asalpharaysandheavyions.Theradiationexhibitslossofenergyalonga

linearlinedeepintothesiliconafterincidentontheactivearea.

The amount of loss and the penetration depth is determined by the type

andmagnitudeoftheradiation.Inordertomeasurecompletelytheamount

ofradiation,thedepletionlayershouldbedeepenoughtocoverthewhole

track from the incident point to the stop point. This requires a high bias

applicationtofullydepletethedetector.Inspiteofthelargeactiveareaas

well ashighbias voltageapplications, thedevicesexhibit super lowdark

currents,lowcapacitancesandlowseriesresistances.

TheLargeActiveAreaHighSpeedDetectorscanbefullydepletedtoachieve

thelowestpossiblejunctioncapacitanceforfastresponsetimes.Theymay

beoperatedatahigherreversevoltage,uptothemaximumallowablevalue,

forachievingevenfasterresponsetimesinnanoseconds.Thehighreverse

biasat thispoint, increases theeffectiveelectric fieldacross the junction,

hence increasing the charge collection time in the depleted region. Note

that this isachievedwithout thesacrifice for thehigh responsivityaswell

asactivearea.

The Large Active AreaRadiationDetectors can also be fully depleted for

applicationsmeasuring high energyX-rays,-rays aswell as high energy

particles such as electrons, alpha rays and heavy ions. These types of

radiationcanbemeasuredwithtwodifferentmethods.Indirectanddirect.

Indirect High Energy Radiation Measurement:

In this method, the detectors are coupled to a scintillator crystal for

convertinghighenergy radiation intoadetectablevisiblewavelength.The

devices aremounted on a ceramic and covered with a clear layer of an

epoxyresinforanexcellentopticalcouplingtothescintillator.Thismethod

iswidelyusedindetectionofhighenergygammaraysandelectrons.Thisis

wheretheX-UVdevicesfailtomeasureenergieshigherthan17.6keV.The

typeandsizeofthescintillatorcanbeselectedbasedonradiationtypeand

magnitude.

Inadditiontotheiruseinhighenergyparticledetection,thePIN-RD100and

PIN-RD100Aarealsoexcellentchoicesfordetectionintherangebetween

350to1100nminapplicationswherealargeactiveareaandhighspeedis

desired.

These detectors can be coupled to a charge sensitive preamplifier or

lownoise op-amp as shown in the opposite page. The configuration for

indirectmeasurementisalsoshownwithascintillatorcrystal.

Typical Capacitance vs. Reverse Bias Voltage Typical Spectral Response


Fully Depleted PhotodiodesTypical Electro-Optical Specifications at TA=23ºC

DIRECT DETECTIONFor direct detection of high-energyparticles, the pre-amplifier is a FETinput op-amp, followed by oneor more amplification stages, ifnecessary, or a commercial chargesensitivepreamplifier. Thecountingefficiency is directly proportionalto the incident radiation power.The reverse bias voltage must beselectedassuchtoachievethebestsignal-to-noise ratio. For low noiseapplications, all components shouldbeenclosedinametalbox.Also,thebias supply should be either simplebatteries or a very low ripple DCsupply.Thedetectorshouldalsobeoperatedinthephotovoltaicmode.

Amplifier: OPA-637,OPA-27orsimilarRF: 10MΩto10GΩ RS: 1MΩ;SmallerforHighCountingRatesCF: 1pFCD: 1pFto10µF

OUTPUT VOUT = Q / CF WhereQ is theChargeCreatedByOnePhotonorOneParticle

OSD-35-LR’sceramicpackagescomewithoutwindow,insteadtheopticallyclearepoxyisused.†MeasuredatVbias=-50V¶Formechanicaldrawingspleaserefertopages61thru73.*Non-CondensingtemperatureandStorageRange,Non-CondensingEnvironment.

INDIRECT DETECTION (WITH SCINTILLATOR CRYSTAL) The circuit is very similar to the direct detectioncircuit except that the photodiode is coupled toa scintillator. The scintillator converts the high-energy X-rays and/or X-rays into visible light.Suitable scintillators include CsI(TL), CdWO4,BGO and NaI(TL). The amplifier should be aFET input op-amp, followed by one or moreamplification stages, or a commercial chargesensitivepreamplifier.Theoutputvoltagedependsprimarilyonthescintillatorefficiencyandshouldbecalibratedbyusingradioactivesources.

Mod

el N

um

ber

Active Area

Pea

k R

espon

sivi

tyW

avel

ength

(nm

)

Responsivity900 nm

Capacitance(pF)

ShuntResistance

(GΩ)

NEP(W/√Hz)

RiseTime(ns)

Temp.*Range(˚C)

PackageStyle ¶

Are

a (m

m2)

Dim

ensi

ons

(mm

) A/W 0 V -10 V 900 nm0 V

632nm50Ω

Oper

atin

g

Sto

rage

typ. typ. min. typ. typ. typ.

OSD35-LR Series

OSD35-LR-A 34.2 5.8 x 5.9 830 0.54 1300 2 3 5.6 e-15 ---

-25

~+

75

-45

~ +

100

25 / Ceramic

OSD35-LR-D 34.2 5.8 x 5.9 830 0.54 1300 0.1 0.3 1.8 e-14 ---

Mod

el N

um

ber

Active Area

Pea

k R

espon

sivi

tyW

avel

ength

(nm

)

Responsivity(A/W)

Dep

leti

onV

olta

ge

Dark Current(nA)

Capacitance(pF)

Rise Time(ns)

NEP(W/√Hz)

ReverseVoltage

(V)

Temp.*Range(˚C)

PackageStyle ¶

Are

a (m

m2)

Dim

ensi

ons

(mm

) 900 nm V -100 V -100 V900 nm-100 V50Ω

900nm-100V 10 µA

Oper

atin

g

Sto

rage

typ. typ. typ. max. typ. max. typ. typ. max.

Large Active Area, High Speed

PIN-RD07 7.1 3.00 φ900

0.55 48 0.2 5.0 8.0 9.0 1.5 1.2 e-14 135

-40 ~

+10

0

-55 ~

+12

5

26 / TO-8PIN-RD15 14.9 4.35 φ 0.58 55 1.0 30 14 16 3.0 2.5 e-14 140

PIN-RD100 100 10 Sq950 0.60

75 2 10 50 60 40 3.2 e-14 120

-20 ~

+60 -20 ~

+80 25 /

CeramicPIN-RD100A 100 10 Sq 35 2 † 10 † 40 † 45 † 6 3.4 e-14 70

26

Multi-Channel X-Ray Detector SeriesScintillator Compatible Photodiode Arrays

FEATURES •ScintillatorPlatform •5VoltBias •Channelspacingvariety

APPLICATIONS •PositionSensors •Multi-channelGammacounting •X-raySecuritySystems

This series consists of 16-element arrays: the individualelementsare

groupedtogetherandmountedonPCB.

ForX-rayorGamma-rayapplication, thesemulti-channeldetectorsoffer

scintillator-mountingoptions:BGO, CdWO4 or CsI(TI).

BGO (BismuthGermanate)actsasan idealenergyabsorber: it iswidely

acceptedinhigh-energydetectionapplications.

CdWO4(CadmiumTungstate)exhibitssufficientlyhighlightoutput,helping

improveSpectrometryresults.

CsI(CesiumIodide)isanotherhighenergyabsorber,providingadequate

resistanceagainstmechanicalshockandthermalstress.

When coupled to scintillator, these Si arrays map any medium or high

radiationenergyovertovisiblespectrumviascatteringeffect.Also,their

specially designed PCB allows end-to-end connectivity. Multiple arrays

canbedeployedinsituationthatcallsforlargerscaleassembly.

Multi-Channel X-Ray Detector SeriesTypical Electro-Optical Specifications at TA=23ºC


Mod

el N

um

ber

Num

ber

of

Elem

ents

Active AreaPer Element

Pit

ch (

mm

) Responsivity(A/W)

DarkCurrent

(pA)

TerminalCapacitance

(pF)

Rise Time(μs)

ReverseBias(V)

NEP(W/√Hz)

Temp.Range(°C)

540 nm

930 nm -10 mV 0V, 10 KHz 0V, 1KΩ -10mV

930nm

Oper

atin

g

Sto

rage

Area (mm2)

Dimensions(mm) typ. typ. typ. typ. typ. max. typ.

Photoconductive Arrays

A2C-16-1.57 16 2.35 2.00 x 1.18 1.57 0.31 0.59 5 28 0.1 5 5.30 e-15

-10

~

+60

-20

~

+70

CATHODE

(25.0 P.D. ARRAY)8 x 2.54 = 20.32

2 4 6 8 10 12 14 16

1 3 5 7 9 11 13 15

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

1.175

25.4+0.0-0.3

(1.575)

15.24±0.1

2.0 X 45˚MARK

2.0 (4.2 P.D. ARRAY)

15 x 1.575 = 23.625

20.0±0.2

0.6±0.11.0±0.15

A2C-16-1.57

3.5±0.5

18X ø0.45

CATHODE

Mechanical Specifications (All units in mm)

28

YAG SeriesNd:YAG Optimized Photodetectors

FEATURES •Nd:YAGSensitivity •HighBreakdownVoltage •LargeArea •HighSpeed •HighAccuracy

APPLICATIONS •Nd:YAGPointing •LaserPointing&Positioning •PositionMeasurement •SurfaceProfiling •GuidanceSystems

¶Formechanicaldrawingspleaserefertopages61thru73.**Specificationsareperelement

Cap

acita

nce

Mod

el N

um

ber

Active Area

Pea

k

Res

pon

sivi

tyW

avel

ength

Responsivity(A/W)

Elem

ent

Gap

DarkCurrent

(nA)

Capacitance(pF)

Rise Time(ns)

NEP(W/√Hz)

Reverse Voltage

(V)

Temp.*Range(˚C)

PackageStyle ¶

Are

a (m

m2)

Dim

ensi

ons

(mm

) λpnm

1000nm-180V

mm -180 V -180 V1064 nm-180 V50 Ω

1064 nm-180 V

100 µA

Oper

atio

ng

Sto

rage

1 µA*

typ. typ. typ. typ. max. typ. max. typ. typ. max.

Nd: YAG Optimized Single ElementPIN-5-YAG 5.1 2.54 φ

1000 0.6 -50 - 5 - 18 1.2 e-14

200

-40

~+

100

-55

~+

125

2 / T0-5

PIN-100-YAG 100 11.28 φ 75 1000 25 - 30 2.5 e-14 20 / Metal

Nd: YAG Optimized Quadrant Photodetectors**SPOT-9-YAG 19.6 10 φ

1000

0.40.1 35 250 5 1 18 3.2 e-14

200

-20

~+

60

-20

~+

80 20 / Metal

SPOT-11-YAG FL 26 11.5 φ 0.13 25 100 12 - 15 3.4 e-14 29 / Metal

SPOT-13-YAG-FL 33.7 13.1 φ 0.4 0.13 30 200 15 - 15 -300

-55

~

+12

5C

-55

~

+12

5C 29 / Metal

SPOT-15-YAG 38.5 14.0 φ 0.6 0.2 1000 3000 15 30 36 - 20 / Metal

TheYAG Series of photo detectors are optimized for high response at 1060 nm, theYAG

laser lightwavelength,andlowcapacitance,forhighspeedoperationandlownoise.These

detectorscanbeusedforsensinglowlightintensities,suchasthelightreflectedfromobjects

illuminated by a YAG laser beam for ranging applications. The SPOT Series of quadrantdetectorsarewellsuitedforaimingandpointingapplications.TheseareallNonPdevices.

These detectors can be used in the photovoltaic mode, for low speed applications requiring low noise, or in the photoconductive mode, with an applied reverse bias, for high speed applications.

Cap

acita

nce

Typical Spectral Response Typical Capacitance vs. Bias Voltage

29World Class Products - Together We Perform

Photops™Photodiode-Amplifier Hybrids

FEATURES •Detector/AmplifierCombined •AdjustableGain/Bandwidth •LowNoise •WideBandwidth •DIPPackage •LargeActiveArea

APPLICATIONS •GeneralPurposeLightDetection •LaserPowerMonitoring •MedicalAnalysis •LaserCommunications •BarCodeReaders •IndustrialControlSensors •PollutionMonitoring •GuidanceSystems •Colorimeter

The Photop™ Series,combinesaphotodiodewithanoperationalamplifierinthesame

package.Photops™general-purposedetectorshaveaspectralrangefromeither350

nmto1100nmor200nmto1100nm.Theyhaveanintegratedpackageensuringlow

noiseoutput under a varietyof operatingconditions.Theseop-ampsare specifically

selectedbyOSIOptoelectronicsengineersforcompatibilitytoourphotodiodes.Among

manyofthesespecificparametersarelownoise,lowdriftandcapabilityofsupporting

avarietyofgainsandbandwidthsdeterminedby theexternal feedbackcomponents.

OperationfromDCleveltoseveralMHzispossibleinaneitherunbiasedconfiguration

forlowspeed,lowdriftapplicationsorbiasedforfasterresponsetime.

Any modification of the above devices is possible. The modifications can be simply adding a bandpass optical filter, integration of additional chip (hybrid) components inside the same package, utilizing a different op-amp, photodetector replacement, modified package design and / or mount on PCB or ceramic.


Typical Responsivity vs. Frequency Typical Gain vs. Frequency

For your specific requirements, contact one of our Applications Engineers.

30

Photops™ (Photodiode Specifications)Typical Electro-Optical Specifications at TA=23ºC

¶Formechanicaldrawingspleaserefertopages61thru73.**LN–SeriesDevicesaretobeusedwitha0VBias.*Non-CondensingtemperatureandStorageRange,Non-CondensingEnvironment.#OSI-515replacesUDT-455HS

Mod

el N

um

ber

Active Area Responsivity(A/W)

Capacitance(pF)

Dark Current

(nA) Shunt

Res

ista

nce

(MΩ

) NEP(W/√Hz)

Rev

erse

V

olta

ge Temp.*

Range(°C)

Package Style

Are

a

(mm

2)

Dim

ensi

on(m

m)

254 nm 970 nm 0 V -10 V -10 V -10

mV0 V

254 nm-10 V

970 nm V

Oper

atin

g

Sto

rage

min

.

typ.

min

.

typ.

typ.

typ.

typ.

max

.

typ.

typ.

typ.

max

.

350-1100 nm Spectral Range

UDT-4555.1 2.54 φ

--- 0.60 0.65

85 15 0.25 3

---

1.4 e -14

30**

0 ~

+ 7

0

-30

~+

100

30 / TO-5OSI-515#

UDT-020D 16 4.57 φ 330 60 0.5 10 1.9 e -14 31 / TO-8

UDT-555D 100 11.3 φ 1500 300 2 25 3.9 e -14 32 / Special

200-1100 nm Spectral Range

UDT-455UV 5.1 2.54 φ

0.10 0.14 ---

300

---

100 9.2 e -14

--- 5**

30 / TO-5

OSI-020UV 16 4.57 φ 1000 50 1.3 e -13 31 / TO-8

UDT-055UV 50 7.98 φ 2500 20 2.1 e -13 32 / Special

UDT-555UV100 11.3 φ 4500 10 2.9 e -13 32 / Special

UDT-555UV/LN**

Operational Amplifier Specifications Electro-Optical Specifications at TA=23 °C

Mod

el N

um

ber

Supply Voltage

Quiescent Supply Current (mA)

Input Offset Voltage

Tem

p.

Coe

ffic

ient

Input

Off

set

Vol

tage

Input Bias Current

GainBandwidth

Product

Slew Rate

Open Loop

Gain, DC

Input Noise

Voltage

Input Noise

Current

100 H

z

1 k

Hz

1 k

Hz

± 15 V mV µV / °C pA MHz V / µs V /mV nV/ √Hz fA/ √Hz

min

.

typ.

max

.

typ.

max

.

typ.

max

.

typ.

max

.

typ.

max

.

min

.

typ.

min

.

typ.

min

.

typ.

typ.

typ.

typ.

UDT-455

--- ±15 ±18 2.8 5.0 0.5 3 4 30 ±80 ±400 3.0 5.4 5 9 50 200 20 15 10UDT-455UV

UDT-020D

OSI-020UV --- ±15 ±18 1.8 2 0.03 0.12 0.35 1 0.5 20 --- 5.1 --- 20 1000 2000 5.8 5.1 0.8

OSI-515* --- ±15 ±18 6.5 7.2 1 3 10 --- ±15 ±40 23 26 125 140 3 6.3 --- 12 10

UDT-555UV/LN --- ±15 ±18 2.5 3.5 0.1 0.5 ±2 ±5 ±0.8 ±2 --- 2 1 2 501 1778 15 8 0.5

UDT-055UV

--- ±15 ±22 2.7 4.0 0.4 1 3 10 ±40 ±200 3.5 5.7 7.5 11 75 220 20 15 10UDT-555D

UDT-555UV


UDT-455, UDT-555D, 555UV, 055UVOSI-515: pin 1 & 5 are N/C(No offset adjustment needed).

UDT-020D, OSI-020UV

UDT-555UV/LN

Photop SeriesSchematic Diagrams

Theoutputvoltageisproportionaltothelightintensityofthelightandisgivenby:

(1)

Frequency Response (Photodiode/Amplifier Combination)

The frequency response of the photodiode / amplifier combination isdetermined by the characteristics of the photodetector, pre-amplifieraswell as the feedback resistor (RF) and feedbackcapacitor (CF). Foraknown gain, (RF), the 3dB frequency response of the detector/pre-ampcombinationisgivenby:

(2)

However,thedesiredfrequencyresponseislimitedbytheGainBandwidthProduct(GBP)oftheop-amp.Inordertohaveastableoutput,thevaluesoftheRFandCFmustbechosensuchthatthe3dBfrequencyresponseofthedetector/pre-ampcombination,belessthanthemaximumfrequencyoftheop-amp,i.e.f3dB ≤fmax.

(3)

whereCAistheamplifierinputcapacitance.

Inconclusion,anexample for frequency responsecalculations, isgivenbelow. For a gain of 108, an operating frequency of 100 Hz, and anop-ampwithGBPof5MHz:

(4)

Thus,forCF=15.9pF,CJ=15pFandCA=7pF,fmax isabout14.5kHz.Hence,thecircuitisstablesincef3dB ≤fmax.

For more detailed application specific discussions and further reading,refertotheAPPLICATIONNOTESINDEXinthecatalog.

Note: The shaded boxes represent the Photop™ components and their connections. The components outside the boxes are typical

32

Temperature (°C)

BPW-34Plastic Molded - Industry Standard

FEATURES •HighReliability •HighDensityPackage •RuggedResinMold •HighSpeedandLowDarkCurrent

APPLICATIONS •IRSensors•BarCodeScanners •ColorAnalysis •SmokeDetectors

¶Formechanicaldrawingspleaserefertopages61thru73.*Non-condensingtemperatureandstoragerange,Non-condensingenvironment.

Mod

el N

um

ber

Active Area

Pea

k

Res

pon

sivi

ty

Wav

elen

gth

Responsivityatλp

Capacitance(pF)

DarkCurrent

(nA)NEP

(W/√Hz)ReverseVoltage

(V)

RiseTime(ns)

Temp*Range(°C)

Pac

kage

Sty

le ¶

Are

a (m

m2)

Dim

ensi

ons

(mm

)

λp(nm)

(A/W) 0 V1 MHz

-10 V1MHz

-10 V -10 V970 nm

-10 V830 nm

50 Ω

Oper

atin

g

Sto

rage

typ. min. typ. typ. typ. typ. max. typ. max. typ.

BPW 34 SeriesBPW-34 «

7.25 2.69 sq. 970

0.55 0.6065 12 2 30

4.2e -1440 20

-25

~+

85

-40

~+

100 19 / Plastic

MoldedBPW-34S

BPW-34B « 0.15** 0.20** 1.3e -13**

BPW-34 series are a family of high

qualityandreliabilityplasticencapsulated

photodiodes. The devices in this series,

exhibit similar electrical characteristics,

but vary in optical response. BPW-34B

has an excellent response in the blue

regionofthespectrum.They are excellent for mounting on PCB and hand held devices in harsh environments.

Temperature (°C)

Temperature (°C)

Temperature (°C)


Typical Dark Current vs. Temperature

Typical Capacitance vs. Reverse Bias Voltage

Typical Dark Current vs. Reverse Bias

**ResponsivityandNEPvaluesfortheBPW-34Baregivenat410nm.«Minimumorderquantitiesapply


PIN-08CSL-F

Plastic Encapsulated SeriesLead Frame Molded Photodiodes

FEATURES •HighDensityPackage •RuggedMoldedPackage •LowCapacitance •LowDarkCurrent •LeadFrameStandard •SMT •MoldedLensFeature •SideLookers •FilteronChip(700nmCutoff)

APPLICATIONS •BarCodeReaders •IndustrialCounters •MeasurementandControl •IRRemoteControl •ReflectiveSwitches

OSIOptoelectronicsoffersa lineofhighqualityand reliabilityplastic

encapsulated photodiodes. These molded devices are available in a

varietyofshapesandsizesofphotodetectorsandpackages,including

industrystandardT1andT13/4,flatandlensedsidelookersaswellas

asurfacemountversion(SOT-23).Theyareexcellentformountingon

PCBandhandhelddevicesinharshenvironments.

Theyhaveanexcellent response in theNIR spectrum andarealso

available with visible blocking compounds, transmitting only in the

700-1100nmrange.Theyofferfastswitchingtime,lowcapacitanceas

wellaslowdarkcurrent.Theycanbeutilizedinbothphotoconductive

andphotovoltaicmodesofoperation.

PIN-08CSL-F

PIN-08CSL-F

PIN-08CSL-F


Typical Angular Detection Characteristics Typical Capacitance vs. Reverse Bias Voltage

34

Plastic Encapsulated Series «Typical Electro-Optical Specifications at TA=23ºC

¶Formechanicaldrawingspleaserefertopages61thru73.*Non-CondensingtemperatureandStorageRange,Non-CondensingEnvironment.The“CSL-F”seriesisahomogeneoussiliconphotodiodeandopticalfiltercombinationdevice.Thefiltercoatingisdirectlydepositedontothechipduringwaferprocess.

Mod

el N

um

ber

Active Area

Spectral Range(nm)

ResponsivitylP=970nm

Capacitance(pF) 1 MHz

Dark Current (nA) Reverse

Voltage(V)

Rise Time (ns)

Temp.*Range(˚C)

PackageStyle ¶

Are

a (m

m2)

Dim

ensi

ons

(mm

) (A/W) 0 V -10 V -10 V-10 Vpeak λ50 Ω

Oper

atin

g

Sto

rage

typ. typ. typ. typ. max. max. typ.

PIN-0.81-LLS0.81 1.02 φ 350-1100

0.55

10 2 2

30

20

11

-25

~ +

85

-40

~ +

100

62 / Leadless Ceramic

PIN-0.81-CSL 60 / Resin Molded

PIN-4.0-LLS3.9 2.31x1.68 350-1100 60 10

5


PIN-4.0-CSL 60 / Resin Molded

PIN-07-CSL8.1 2.84 Sq

350-1100

85 15 50

57 / Resin MoldedPIN-07-FSL 700-1100

PIN-07-CSLR8.1 2.84 Sq

350-110056 / Resin Molded

PIN-07-FSLR 700-1100

PIN-08-CSL-F 8.4 2.90 Sq 350-720 0.43@660nm .. 25 .. 10 75 60 / Resin Molded

PIN-8.0-LLS8.4 2.90 Sq

350-1100 0.55100 25 10

3050


PIN-8.0-CSL60 / Resin Molded

PIN-16-CSL 16 4.00 Sq 330 55 5 100

Detector-Filter Combination SeriesPlanar Diffused Silicon Photodiodes


FEATURES •CIEMatch(APseries) •FlatBandResponse(DF) •254NarrowBandpass •w/AmplifierHybrid •BNCPackages

APPLICATIONS •AnalyticalChemistry •Spectrophotometry •Densitometers •Photometry/Radiometry •Spectroradiometry •MedicalInstrumentation •LiquidChromatography

CUSTOMIZED CAPABILITIESCurrentexistingstandardphotodiodescanbemodifiedbyaddingvariousopticalfilter(s),tomatchyourspecificspectralrequirements.Thefilterscan

eitherreplacethestandardglasswindowsorbeusedinconjunctionwiththeglasswindow,dependingonthespecificrequirementand/ornatureof

thefilter.Customerfurnishedopticalfilterscanalsobeincorporatedinthepackage.Thefollowingareamongafewoftheopticalfiltertypesavailable.

Thesecoloredglassfiltersaregroupedintofourmajorcategories:ShortpassFilters,LongpassFilters,BandpassFilters,andNeutralDensityFilters.

WindowsarealsoavailablewithCustom Thin Film, Anti-reflective,Cut-on and Cut-off Filter Coatings.

ALL PHOTODIODES WITH OR WITHOUT FILTERS CAN BE CALIBRATED IN HOUSE FOR RESPONSIVITY FROM 200 NM TO 1100 NM IN 10 NM

STEPS AS WELL AS SINGLE POINT CALIBRATION. ALL OPTICAL CALIBRATIONS ARE NIST TRACEABLE.

TheDetector-Filtercombinationseriesincorporatesafilterwithaphotodiode

to achieve a tailored spectral response. OSI Optoelectronics offers a

multitudeofstandardandcustomcombinations.Uponrequest,alldetector-

filter combinations can be provided with a NIST traceable calibration

data specified in terms of Amps/Watt, Amps/lumen, Amps/lux or Amps/

footcandle.

Amongmanypossiblecustomcombinations, followingarea fewdetector-

filtercombinationsavailableasstandardparts.

PIN-10DF-isa1cm2activearea,BNCpackagedetector-filtercombination,

optimized to achieve a flat responsivity, from 450 to 950 nm. This is the

spectral response required for radiometric measurements. This type of

detectorhasseveraladvantagesoverthermopile,suchassensitivity,which

isaboutathousandtimeshigher,aswellas10timesmorestability.

PIN-10AP -isa1cm2activearea,BNCpackagedetector-filtercombination

whichduplicatestheresponseofthemostcommonlyavailableopticalaid;

thehumaneye. Theeye sensesbothbrightnessandcolor,with response

varyingasafunctionofthewavelength.Thisresponsecurveiscommonly

knownas theCIEcurve.TheAP filtersaccuratelymatch theCIEcurve to

within4%ofarea.

PIN-555AP-hasthesameopticalcharacteristicsasthePIN10-AP,withan

additionaloperationalamplifierinthesamepackage.Thepackageandthe

opampcombinationisidenticaltoUDT-555Ddetector-amplifiercombination

(Photops™).

PIN-005E-550F - uses a low cost broad bandpass filter with peaktransmissionat550nmtomimictheCIEcurveforphotometricapplications.

ThepassbandissimilartotheCIEcurve,buttheactualslopeofthespectral

responsecurveisquitedifferent.Thisdevicecanalsobeusedtoblockthe

nearIRportionofthespectralrange,700nmandabove.

PIN-005D-254F - is a 6mm2 active area,UVenhancedphotodiode-filter

combinationwhichutilizesanarrowbandpassfilterpeakingat254nm.

36

Detector-Filter Combination SeriesTypical Electro-Optical Specifications at TA=23ºC

300 400 500 600 700 800 900 1000 1100

‡Pointbypointfrom450nmto950nm.§PIN-555APisaDetector/OperationalAmplifierhybrid.ForOp-Ampspecifications,pleaseseep.29.¶Formechanicaldrawingspleaserefertopages61thru73.*=254nm**Non-condensingtemperatureandstoragerange,Non-condensingenvironment.***AreawithinCIECurve

Mod

el N

um

ber

Active Area Spectral Match

Responsivityat

550nm

Capacitance(pF)

ShuntResistance

(MΩ)

NEP(W/√Hz)

Rise Time (µs)

Temp.Range(˚C)

PackageStyle ¶

Are

a (m

m2)

Dim

ensi

ons

(mm

)

λp(nm) (A/W) mA/Lum 0 V -10 mV -10mV

550 nm

0 V550 nm

50 Ω

Oper

atin

g

Sto

rage

typ. typ. typ. typ. typ. typ.

Detector Filter Combination SeriesPIN-10DF

100 11.28 φ

± 7% ‡ 0.15 ---

1500 20

1.9 e-13 1.0

0 ~

+70

-25

~ +

85

13 / BNCPIN-10AP-1

4%*** 0.27 0.4 1.1 e-130.15

PIN-555AP-1§

0.1*

33 / Special

PIN-005E-550F5.7 2.4 sq. ---

0.23---

200 500 2.5 e-14 5 / TO-5

PIN-005D-254F 0.025* 100 300 3.0 e-13* 18 / TO-5


300 400 500 600 700 800 900 1000 1100

300 400 500 600 700 800 900 1000 1100

300 400 500 600 700 800 900 1000 1100




Series EEye Response Detectors

Series E photodiodes are Blue-enhanced detectors with high quality color-correcting filters. The resulting spectral response approximates that of the human eye.

InadditiontotheSeriesEphotodiodeslisted,OSIOptoelectronics

can provide other photodiodes in this catalog with a variety of

opticalfilters.

Luxlx (lm/m2)

PhotPh (lm/cm2)

Foot-candlefc (lm/ft2)

Watt per square cm*

W/cm2

1 1.000 x 10-4 9.290 x 10-2 5.0 x 10-6

1.000 x 104 1 9.290 x 102 9.290 x 10-2

1.076 x 101 1.076 x 10-3 1 5.0 x 10-5

2.0 x 105 1.0 x 101 1.9 x 104 1

Mod

el N

um

ber

Active Area

Responsivity(nA Lux-1)

Dark Current(nA)

NEP(WHz-1/2)

Capacitance(pF)

ShuntResistance

(MΩ)**

Reverse Voltage

(DC) Spectral Curve

Temp.Range(˚C)

PackageStyle ¶

Are

a (m

m2)

Dim

ensi

ons

(mm

)

550 nmVR=0

Oper

atin

g

Sto

rage

min. typ. max. typ. typ. Vr=0Vmax.

Vr=12Vmax. min. typ. max.

OSD-E SeriesOSD1-E 1 1.0 x 1.0 1 2.2 1 0.2 1.5 x 10-14 35 7 250 1000

15

1

-25

~ +

85

-40

~ +

120

7 / TO-18

OSD3-E 3 2.5 x 1.2 3 6.6 2 0.5 1.8 x 10-14 80 20 100 700 1 7 / TO-18

OSD5-E 5 2.5 φ 5 11 2 0.5 1.9 x 10-14 130 35 100 600 1 5 / TO-5

OSD15-E 15 3.8 x 3.8 15 33 10 2 5.2 x 10-14 390 80 50 80 1 5 / TO-5

OSD60-E 100 11.3 φ 30 56 30 8 1.2 x 10-13 2500 520 2 10 2 69 / TO-8

Characteristicsmeasuredat22ºC(±2)andareversebiasof12voltsunlessotherwisestated.**ShuntResistancemeasuredat+/-10mV.¶Formechanicaldrawingspleaserefertopages61thru73.

Unit Conversion Table for IlluminanceThe Series E photodiodes have been color corrected to provide

a phototopic eye response. These devices can be used as low

illuminancemonitors,i.e.visiblelightmeasurementinstrumentsand

adjustingbrightnessofvisibledisplay.

100

90

80

70

60

50

40

30

20

10

0

CIE Curve vs. E Type Parts

Rel

ativ

e R

esp

ons

e (%

)

Wavelength (nm)

CURVE #1

CURVE #2

CIE CURVE

2

1

CIE

350 450 550 650 750 850 950*Totalirradiance(measuredvalue)bytheCIEstandardlightsource“A”.

FEATURES •HumanEyeResponse •TOCanPackages

APPLICATIONS •Photometry/Radiometry •MedicalInstrumentation •AnalyticalChemistry

CIE Curve vs. E Type Parts

38

Dual Sandwich Detector SeriesTwo Color Photodiodes

FEATURES •Compact •HermeticallySealed •LowNoise •WideWavelengthRange •RemoteMeasurements •w/TEC

APPLICATIONS •FlameTemperaturesensing •Spectrophotometer •Dual-wavelengthdetection •IRThermometersforHeat Treating,inductionheating, andothermetalparts processing

Dual Sandwich Detectors or Two Color Detectors are mostly employed forremote temperaturemeasurements. The temperature ismeasuredby taking theratio of radiation intensities of two adjacent wavelengths and comparing themwiththestandardblackbodyradiationcurves.Theadvantagesofopticalremotemeasurement have definitely made these devices the perfect match for thistype of measurements. They are independent of emissivity and unaffected bycontaminantsinthefieldofviewormovingtargets.Inaddition,measurementsoftargetsoutof thedirect lineofsightandtheability tofunctionfromoutsideRF/EMI interferenceor vacuumareas are possible. They also have the advantagesofovercomingobstructedtargetviews,blockages fromsight tubes,channelsorscreens, atmospheric smoke, steam, or dust, dirty windows as well as targetssmallerthanfieldofviewand/ormovingwithinthefieldofview.Thesedetectorscan also be used in applications where wide wavelength range of detection isneeded.

OSIOptoelectronicsoffers three typesofdual sandwichdetectors.TheSilicon-Siliconsandwich, inwhichonesiliconphotodiode isplacedontopof theother,with the photons of shorter wavelengths absorbed in the top silicon and thephotons of longer wavelengths penetrating deeper, absorbed by the bottomphotodiode. For applications requiring awider rangeofwavelengthbeyond1.1µm,an InGaAsphotodiodereplacesthebottomphotodiode.TheSilicon-InGaAsversionisalsoavailablewithatwostagethermo-electriccoolerformoreaccuratemeasurementsbystabilizingthetemperatureoftheInGaAsdetector.

Alldevicesaredesignedforphotovoltaicoperation (nobias),however, theymaybebiasedifneeded,tothemaximumreversevoltagespecified.Theyareidealforcouplingtoanoperationalamplifierinthecurrentmode.Forfurtherdetailsrefertothe“PhotodiodeCharacteristics”sectionofthiscatalog.




Dual Sandwich Detector SeriesTypical Electro-Optical Specifications at TA=23ºC

§@870nm‡Thermo-ElectricCoolerandThermistorSpecificationsarespecifiedinthetablesbelow.¶Formechanicaldrawingspleaserefertopages61thru73.*Non-CondensingtemperatureandStorageRange,Non-CondensingEnvironment.

Mod

el N

um

ber

Det

ecto

r El

emen

tActiveArea

SpectralRange(nm)

Pea

kW

avel

ength

Res

pon

sivi

ty

Cap

acit

ance

ShuntResistance

NEPD*

@ peak

Rev

erse

Vol

tage Rise

Time(μs)

Temp*Range(°C)

Pac

kage

Sty

le

Dim

ensi

on (

mm

)

nm

λp 0 V-10 mV

0V, λp 0V, λp

V 0 V50 ΩλP

Oper

atin

g

Sto

rage

A / W pF MΩ (W/√Hz) (cm√Hz/W)

typ. typ. typ. min. typ. typ. typ. max. typ.

Non-Cooled

PIN-DSSSi (top)

2.54 φ400-1100 950 0.45

70 50 5001.3 e -14 1.7 e +13

510

-40

~ +

100

-55

~ +

125

17 /TO-5

Si 950-1100 1060 0.12 4.8 e -14 4.7 e +12 150

PIN-DSInSi (top) 2.54 φ 400-1100 950 0.55 § 450 150 1.9 e -14 § 1.2 e +13 § 5 4

InGaAs 1.50 φ 1000-1800 1300 0.60 300 1.0 2.1 e -13 8.4 e +11 2 4

Two Stage Thermoelectrically Cooled ‡

PIN-DSIn-TECSi (top) 2.54 φ 400-1100 950 0.55 § 450 150 1.9 e -14 § 1.2 e +13 § 5 4

-40

~ +

100

-55

~ +

125

24 /TO-8

InGaAs 1.50 φ 1000-1800 1300 0.60 300 1.0 2.1 e -13 8.4 e +11 2 4

Thermistor Specifications

Two Stage Thermo-electric Specifications

PARAMETER CONDITION SPECIFICATION

Temperature Range --- -100 ºC to +100 ºC

Nominal Resistance --- 1.25 KΩ @ 25 ºC

Accuracy

-100 ºC to -25 ºC ± 6.5 ºC

-25 ºC to +50 ºC ± 3.5 ºC

@ 25 ºC ± 1.5 ºC

+50 ºC to +100 ºC ± 6.7 ºC

PARAMETER SYMBOL CONDITION SPECIFICATION

Maximum Achievable Temperature Difference ΔTMAX (°C)I = IMAXQC = 0

Vaccum 91

Dry 83

Maximum Amount Of Heat Absorbed At The Cold Face QMAX(W) I = IMAX, Δ T= 0 0.92

Input current In Greatest ΔTMAX IMAX (A) --- 1.4

Voltage At ΔTMAXVMAX (V) --- 2.0

40

Multi-Element Array SeriesPlanar Diffused Silicon Photodiodes

FEATURES •CommonSubstrateArray •UltraLowCrossTalk •UVEnhanced(A5V-35UV) •LowDarkCurrent •LowCapacitance •Solderable

APPLICATIONS •LevelMeters •OpticalSpectroscopy •MedicalEquipment •HighSpeedPhotometry •ComputedTomographyScanners •PositionSensors

Typical Shunt Resistance vs. Temperature

Multichannel array photodetectors consist of a number of single element photodiodes

laidadjacenttoeachotherformingaone-dimensionalsensingareaonacommoncathode

substrate.Theycanperformsimultaneousmeasurementsofamovingbeamorbeamsof

manywavelengths.Theyfeaturelowelectricalcrosstalkandsuperhighuniformitybetween

adjacent elements allowing very high precision measurements. Arrays offer a low cost

alternativewhenalargenumberofdetectorsarerequired.Thedetectorsareoptimizedfor

eitherUV,visibleornearIRrange.

They can be either operated in photoconductive mode (reverse biased) to decrease the

response time, or in photovoltaicmode (unbiased) for low drift applications. A2V-16 can

becoupled toanyscintillatorcrystal formeasuringhigh-energyphotons in theX-rayand

gammaray regionofelectromagneticspectrum. Inaddition, theyhavebeenmechanically

designed,sothatseveralofthemcanbemountedendtoendtoeachotherinapplications

wheremorethan16elementsareneeded.


Typical Capacitance vs. Reverse Bias Voltage

Figure11inthe“PhotodiodeCharacteristics”sectionofthiscatalogprovidesadetailed

circuitexampleforthearrays.


Multi-Element Array SeriesTypical Electro-Optical Specifications at TA=23ºC

Thechipsareequippedwith2"longbaretinnedleadssolderedtoallanodesandthecommoncathode.‘V’suffixindicatesthedeviceisoptimizedfor‘photovoltaic’operation.‘C’suffixindicatesthedeviceisoptimizedfor‘photoconductive’operation.¶Formechanicaldrawingspleaserefertopages61thru73.*Non-CondensingtemperatureandStorageRange,Non-CondensingEnvironment.** λ =254nm

Mod

el N

um

ber

Num

ber

of

Elem

ents Active Area

Per Element

Pit

ch (

mm

)

Responsivity(A/W)

Shunt Resistance

(MΩ)

Dark Current

(nA)

Capacitance(pF)

NEP(W / √Hz)

Temp.Range*(˚C)

PackageStyle ¶

Are

a (m

m2)

Dim

ensi

ons

(mm

) 970nm -10 mV -10 V 0 V -10 V 0 V970nm

-10 V970nm

Oper

atin

g

Sto

rage

typ. typ. typ. typ. min. typ.

Photoconductive ArraysA5C-35 35

3.9 4.39 x 0.89 0.99 0.65 --- 0.05 --- 12 --- 6.2 e-15

-30

~ +

85

-40

~ +

125

54 / 40 pin DIPA5C-38 38

Photovoltaic ArraysA2V-16 16 1.92 1.57 x 1.22 1.59 0.60 1000 --- 170 --- 4.8 e-15 --- 53 / PCB

A5V-35 353.9 4.39 x 0.89 0.99 0.60 1000 --- 340 --- 4.8 e-15 --- 54 / 40 pin DIP

A5V-38 38

A2V-76 76 1.8 6.45 x 0.28 0.31 0.50 500 --- 160 --- 8.2 e-15 --- 52 / Ceramic

UV Enhanced Array (All Specifications @ λ =254 nm, VBIAS= -10V)A5V-35UV 35 3.9 4.39 x 0.89 0.99 0.06** 500 --- 340 --- 6.8 e-14 --- 54 / 40 pin DIP

42

2

MΩ

2

Solderable Chip SeriesPlanar Diffused Silicon Photodiodes

FEATURES •LargeActiveAreas •VariousSizes •HighShuntResistance •WithorWithoutLeads

APPLICATIONS •SolarCells •LowCostLightMonitoring •DiodeLaserMonitoring •LowCapacitance

The Solderable photodiode chip seriesofferalowcostapproachtoapplicationsrequiringlargeactiveareaphotodetectorswithorwithoutflyingleadsforeaseof

assembly and / or situations where the detector is considered “disposable”.

They have low capacitance, moderate dark currents, wide dynamic ranges

andhighopen circuit voltages. Thesedetectors are availablewith two3” long

leads soldered to the front (anode) and back (cathode). There are two types

of photodiode chips available. “Photoconductive” series, (SXXCL) for low

capacitanceand fast responseand“Photovoltaic”series (SXXVL) for lownoise

applications.

All of the devices are also available in chip form without any leads. For ordering subtract suffix ‘L’ from the model number, e.g. S-100C.

For large signal outputs, the detectors can be connected directly to a current

meteroracrossaresistorforvoltagemeasurements.Alternately,theoutputcan

bemeasureddirectlywithanoscilloscopeorwithanamplifier.Pleaserefertothe

“PhotodiodeCharacteristics”sectionforfurtherdetails.

2

MΩ

22

MΩ

22

MΩ

2

Typical Spectral Response Typical Dark Current per Unit Area vs. Bias Voltage

Typical Shunt Resistance vs. Temperature Typical Capacitance per Unit Area vs. Bias Voltage


Solderable Chip SeriesTypical Electro-Optical Specifications at TA=23ºC

§Alloftheabovebarechipsareprovidedwithtwo3"long29-30AWGinsulatedcolorcodedleadsattachedtothefrontforanode(RED)andtothebackforCathode(BLACK).Theyarealsoavailableinchipformonly(Leadless).ForOrderingsubtractSuffix‘L’fromtheModelNumber,i.e.S-100C.

All chip dimensions in inches.

Active Area

Chip size mm

(inches)

Peak ResponsivityWavelength

Responsivityat λp

ShuntResistance

(MΩ)

DarkCurrent

(nA)

Capacitance(pF)

Area mm2

(inches2)

Dimensions mm

(inches)

λp(nm) A/W -10 mV -5 V 0 V -5 V

typ. min. typ. min. max. typ. typ.Mod

el N

um

ber

S-4CL § 4.7(0.007)

1.7 x 2.8(0.07 x 0.11)

1.9 x 4.1(0.08 x 0.16)

970 0.60 0.65

--- 20 --- 15

S-4VL 10 --- 370 ---

S-10CL 9.6(0.015)

2.3 x 4.2(0.09 x 0.17)

2.5 x 5.1(0.10 x 0.20)

--- 40 --- 30

S-10VL 8 --- 750 ---

S-25CL 25.8(0.04)

5.1 x 5.1(0.20 x 0.20)

5.5 x 6.0(0.22 x 0.24)

--- 100 --- 95

S-25VL 5 --- 2100 ---

S-25CRL 25.4(0.039)

2.5 x 10.1(0.10 x 0.40)

3.4 x 10.5(0.13 x 0.41)

--- 100 --- 95

S-25VRL 5 --- 2100 ---

S-50CL 51.0(0.079)

2.5 x 20.3(0.10 x 0.80)

3.4 x 20.6(0.13 x 0.81)

--- 300 --- 200

S-50VL 3 --- 4000 ---

S-80CL 82.6(0.128)

4.1 x 20.1(0.16 x 0.79)

5.2 x 20.4(0.21 x 0.80)

--- 500 --- 300

S-80VL 2 --- 6000 ---

S-100CL 93.4(0.145)

9.7 x 9.7(0.38 x 0.38)

10.5 x 11.00(0.42 x 0.43)

--- 600 --- 375

S-100VL 1.0 --- 8500 ---

S-120CL 105.7(0.164)

4.5 x 23.5(0.18 x 0.93)

5.5 x 23.9(0.22 x 0.94)

--- 800 --- 450

S-120VL 0.5 --- 10000 ---

S-200CL 189.0(0.293)

9.2 x 20.7(0.36 x 0.81)

10.2 x 21.0(0.40 x 0.83)

--- 1200 --- 750

S-200VL 0.2 --- 17000 ---

44

BI-SMTBack-Illuminated Silicon Photodiodes

TheBI-SMTproductseriesaresinglechannelback-illuminatedsiliconphotodiodes

specificallydesigned tominimize ‘dead’ areasat theedgeof thedevice.Each

deviceisdesignedonapackagewithdimensionsverysimilartothechipitself.

Thisdesignallowsformultipledetectorstobearrangedinatiledformatandoffers

easeofcouplingtoascintillator.

FEATURES •ChipSizePackage •EaseofcouplingtoScintillator •PatternedElectrodes

APPLICATIONS •X-RayInspection •ComputedTomography •GeneralIndustrialUse

Mod

el N

um

ber

Active Area

Pea

k

Res

pon

sivi

ty

Wav

elen

gth

Responsivityat

540nm

Responsivityat

920nm

Capacitance(pF)

DarkCurrent

(nA)

ShuntResistance

(MΩ)ReverseVoltage

(V)

RiseTime(µs)

Temp*Range(°C)

Pac

kage

Sty

le ¶

Are

a (m

m2)

Dim

ensi

ons

(mm

)

λp(nm) (A/W) (A/W) 0 V

1 KHz-10 mV -10mV

0V, 1 KOhm, 650nm

Oper

atin

g

Sto

rage

typ. min. typ. min. typ. typ. typ. max. typ. max. typ.

33BI-SMT 5.76 2.4 x 2.4

920 0.30 0.35 0.53 0.59

50 .02 .5 500

10

10

-20

~+

60

-20

~+

80 SMT55BI-SMT 19.36 4.4 x 4.4 200 .04 2 250 20

1010BI-SMT 88.36 9.4 x 9.4 900 .16 10 1 20

Rel

ativ

e S

ensi

tivity

(%)

Position on Photosensitive Area (um)

0 1000 2000 3000

100.0

80.0

60.0

40.0

20.0

00

Typical Spectral Response (TA=25ºC) Typ. Sensitivity Uniformity (TA=25ºC, λ=650nm, Vr=OV, 50µm Spot)

Rel

ativ

e S

ensi

tivity

(%)

Position on Photosensitive Area (um)

0 1000 2000 3000

100.0

80.0

60.0

40.0

20.0

00


BI-SMTBack-Illuminated Silicon Photodiodes

Dimensions (inches)

Model Number A B C D E F

33BI-SMT 0.118 0.11 0.031 0.02 0.043 0.024

55BI-SMT 0.197 0.189 0.051 0.039 0.0825 0.024

1010BI-SMT 0.394 0.386 0.051 0.039 0.163 0.059

0.004” 0.005”

Pad Assignments:Cathode: 1, 3, 5, 7

Anode: 2, 4, 6, 8

BI-SMT Mechanical Specifications

0.004” 0.005”

46

Avalanche PhotodiodesUltra High Gain Silicon Photodetectors

FEATURES •HighResponsivity •HighBandwidth/FastResponse •LowNoise •LowBiasVoltage •HermeticallySealedTO-Packages

APPLICATIONS •HighSpeedOpticalCommunications •LaserRangeFinder •BarCodeReaders •OpticalRemoteControl •MedicalEquipment •HighSpeedPhotometry

SiliconAvalanchePhotodiodesmakeuseofinternalmultiplicationtoachieve

gain due to impact ionization. The result is the optimized series of high

Responsivity devices, exhibiting excellent sensitivity. OSI Optoelectronics

offersseveral sizesofdetectors thatareavailablewith flatwindowsorball

lensesforopticalfiberapplications.

*1:Areainwhichatypicalgaincanbeobtained.

Product Model

Active Area Responsivity

@Gain M λ = 800 nm

(A/W)

DarkCurrent

Gain M

(nA)

Ct

Gain M

(pF)

Q.E.

M = 1 λ = 800

nm

(%)

BreakdownVoltage

100µA

(V)

TemperatureCoefficient

ofBreakdown

Voltage

(V/°C)

Bandwidth

-3dBGain Mλ = 800

nm(MHz)

Excess Noise Figure

Gain Mλ = 800

nm

GainM

λ = 800 nm

Sto

rage

Tem

per

ature

(°C

)

Oper

atin

gTe

mper

ature

(°C

)

Pac

kage

Sty

le *

2

Dia

met

er*1

(m

m)

Are

a (m

m2)

Typ Max Typ Max

APD02-8-150-T52 0.2 0.03

50

0.05 1 1.5 75 150 250 0.45 1000 0.3 100

-55

~ +

125

-40

~ +

100

65 / TO-52 or 66 / TO-52L

APD05-8-150-T52 0.5 0.19 0.1 1 3 75 150 250 0.45 900 0.3 10065 / TO-52 or 66 / TO-52L

APD10-8-150-T52 1.0 0.78 0.2 2 6 75 150 250 0.45 600 0.3 10065 / TO-52 or 66 / TO-52L

APD15-8-150-TO5 1.5 1.77 0.5 5 10 75 150 250 0.45 350 0.3 100 67 / TO-5

APD30-8-150-TO5 3.0 7.0 30 1 10 40 75 150 250 0.45 65 0.3 60 67 / TO-5

APD50-8-150-TO8 5.0 19.6 20 3 30 105 75 150 250 0.45 25 0.3 40 3 / TO-8

Electro-Optical Characteristics (TA = 23° C, typical values at gain listed, unless otherwise specified)

*2:PleaserefertotheSiliconAPDbrochureformoredetailedinformation.Capwithmicro-lensisavailableforsmallactiveareasize.

60

50

40

30

20

10

0

Wavelength (nm)400 500 600 700 800 900 1000 1100

Res

pons

ivity

(A/W

)


Res

po

nsi

tivi

ty (

A/W

)

Wavelength (nm)

Typ. Spectral Response (TA= 23˚C, M = 100)

Typ. Gain vs. Reverse Bias (TA= 23˚C, 800 nm)

Reverse Bias Voltage (V)

Gai

n

APD Series 8-150Silicon Avalanche Photodiodes, 800nm band

Typ. Capacitance vs. Reverse Bias (TA= 23˚C, f=1MHz)

Cap

acit

ance

(p

F)


APD50-8-150

APD30-8-150

APD15-8-150

APD10-8-150

APD05-8-150

APD02-8-150

Typ. Dark Current vs. Reverse Bias (TA= 23˚C)

APD50-8-150APD30-8-150

APD15-8-150

APD10-8-150

Dar

k C

urr

ent

(pA

)


APD05-8-150 APD02-8-150

100%

80%

60%

40%

20%

0%

Res

pons

ivity

(A/w

)

Wavelength (nm)400 500 600 700 800 900 1000 1100

Typ. Quantum Efficiency vs. Wavelength (TA= 23˚C)

Qu

antu

m E

ffici

ency

Wavelength (nm)

48

Segmented Photodiodes (SPOT Series)Position Sensing Detector (PSD)

FEATURES •HighAccuracy •ExcellentResolution •High-SpeedResponse •UltraLowDarkCurrent •ExcellentResponseMatch •HighStabilityoverTimeandTemperature

APPLICATIONS •MachineToolAlignment •PositionMeasuring •BeamCentering •SurfaceProfiling •Targeting •GuidanceSystems

The SPOT Series are common substrate photodetectors segmented into either two

(2)orfour(4)separateactiveareas.Theyareavailablewitheithera0.005”or0.0004”

welldefinedgapbetweentheadjacentelements resulting inhighresponseuniformity

betweentheelements.TheSPOTseriesareidealforveryaccuratenullingorcentering

applications.Positioninformationcanbeobtainedwhenthelightspotdiameterislarger

thanthespacingbetweenthecells.

Spectral response range is from 350-1100nm. Notch or bandpass filters can be added to achieve specific spectral responses.

These detectors exhibit excellent stability over time and temperature, fast response

timesnecessary forhighspeedorpulseoperation,andposition resolutionsofbetter

than 0.1 µm. Maximum recommended power density is 10 mW / cm2 and typical

uniformityofresponsefora1mmdiameterspotis±2%.

The circuit on the opposite page represents a typical biasing and detection circuit set up for both bi-cells and quad-cells. For position calculations and further details, refer to “Photodiode Characteristics”

section of the catalog.

Typical Spectral Response Typical Cross-Over Characteristics

Typical Capacitance vs. Reverse Bias Voltage Typical Dark Current vs. Reverse Bias

Segmented Photodiodes (SPOT Series)Typical Electro-Optical Specifications at TA=23ºC


‡OverallDiameter(AllfourQuads)¶Formechanicaldrawingspleaserefertopages61thru73.Chipcenteringwithin±0.010".

Mod

el N

um

ber

Active AreaPer Element

Elem

ent

Gap

(m

m) Responsivity

(A/W)Capacitance

(pF)Dark Current

(nA)NEP

(W/Hz) ReverseVoltage

(V)

RiseTime(ns)

TempRange(˚C)

PackageStyle ¶

Are

a (m

m2)

Dim

ensi

ons

(mm

) 970 nm -10 V -10 V -10 V970 nm

-10 V780 nm

50 Ω

Oper

atin

g

Sto

rage

min. typ. typ. typ. max. typ. max. typ.

Two-Element Series, Metal Package

CD-25T 2.3 4.6 x 0.5 0.2

0.60 0.65

50@ -15V 20@ -15V1.1 e-14

30

18

-40

~ +

100

-55

~ +

125 2 / TO-5

SPOT-2D 3.3 1.3 x 2.5 0.127 11 0.15 2.0 22 41 / TO-5

SPOT-2DMI 0.7 0.6 x 1.2 0.013 3 0.05 1.0 6.2 e-15 11 40 / TO-18

SPOT-3D 2.8 0.6 x 4.6 0.025 7 0.13 2.0 9.9 e-15 25 41 / TO-5

Four Element Series, Metal Package

SPOT-4D 1.61 1.3 sq 0.127

0.60 0.65

5 0.10 1.0 8.7 e-15

30

22

-40

~ +

100

-55

~ +

125 41 / TO-5

SPOT-4DMI 0.25 0.5 sq 0.013 1 0.01 0.5 2.8 e-15 9

SPOT-9D 19.610 φ ‡

0.10260 0.50 10.0 1.9 e-14

3343 / LoProf

SPOT-9DMI 19.6 0.010 28

50

Duo-Lateral, Super Linear PSD’sPosition Sensing Detectors (PSD)

FEATURES •SuperLinear •UltraHighAccuracy •WideDynamicRange •HighReliability •DuoLateralStructure

APPLICATIONS •BeamAlignment •PositionSensing •AngleMeasurement •SurfaceProfiling •HeightMeasurements •Targeting •GuidanceSystem •MotionAnalysis

TheSuper Linear Position Sensorsfeaturestateoftheartduo-lateraltechnologyto provide a continuous analog output proportional to the displacement of the

centroidofalightspotfromthecenter,ontheactivearea.Ascontinuousposition

sensors,thesedetectorsareunparalleled;offeringpositionaccuraciesof99%over

64%ofthesensingarea.Theseaccuraciesareachievedbyduo-lateraltechnology,

manufacturing the detectors with two separate resistive layer, one located on

thetopandtheotheratthebottomofthechip.Oneortwodimensionalposition

measurements can be obtained using these sensors. A reverse bias should be

appliedtothesedetectorstoachieveoptimumcurrentlinearityathighlightlevels.

ThemaximumrecommendedpowerdensityincidentontheduolateralPSDsare1

mW/cm2 .Foroptimumperformance, incidentbeamshouldbeperpendicularto

theactiveareawithspotsizelessthan1mmindiameter.

For position calculations and further details on circuit set up, refer to the “Photodiode Characteristics” section of the catalog.

Typical Spectral Response Typical Position Detectability



Duo-Lateral Super Linear PSD’sTypical Electro-Optical Specifications at TA=23ºC

†Thepositiontemperaturedriftspecificationsareforthediemountedonacopperplatewithoutawindowandthebeamattheelectricalcenterofthesensingarea.§TheDLSSeriesarepackagedwithA/RcoatedwindowsandhavealowerdarkcurrentthantheDLseries.¶Formechanicaldrawingspleaserefertopages61thru73.*Non-CondensingtemperatureandStorageRange,Non-CondensingEnvironment.

NOTES:1.DL(S)seriesareavailablewithremovablewindows.2.Chipcenteringwithin±0.010".


Mod

el N

um

ber

PositionSensing Area

Responsivity(A/W)

Position Detection

Error(µm)

Dark Current(nA)

Capacitance(pF)

RiseTime(µs) Position

Detection Drift †

(µm / °C)

Inter-electrode

Resistance (kΩ)

TempRange(˚C)

PackageStyle ¶

Are

a (m

m2)

Dim

ensi

on

(mm

) 670 nm

Over 80% of Length 64% of Sensing

Area

-15 V, SL Series-5 V, DL Series

-15 V, SL Series-5 V, DL Series

670 nm50 Ω

Oper

atin

g

Sto

rage

min. typ. typ. typ. max. typ. max. typ. typ. min. max.

One-Dimensional Series, Metal Package (VBIAS=-15V)

SL3-1 3 3 x 10.3 0.4

3 5 50 3 7 0.04 0.06 15 80

-10

~

+60

-20

~

+80

41 / TO-5

SL5-1 5 5 x 1 5 10 100 5 9 0.10 0.10 20 100 42 / TO-8

One-Dimensional Series, Ceramic Package (VBIAS=-15V)

SL3-2 3 3 x 1

0.3 0.4

3 5 50 3 7 0.04 0.06 15 80

-10

~ +

60

-20

~ +

80

48 / 8-pin DIP

SL5-2 5 5 x 1 5 10 100 5 9 0.10 0.10 20 100

SL15 15 15 x 1 15 150 300 15 25 0.60 0.1 60 300 49 / 24-pin DIP

SL30 120 30 x 4 30 150 1000 125 150 1.0 0.6 40 80 51 / Ceramic

SL76-1 190 76 x 2.5 76 100 1000 190 250 14.0 1.4 120 600 50 / Special

Two-Dimensional Series, Metal Package § (VBIAS=-5V)

DL-2 «

4 2 sq

0.3 0.4

30

30 600 10 30

0.025

0.20

5 25

-10

~ +

60

-20

~ +

80

37 / TO-8DLS-2 «

10 175 8 14 0.40DLS-2S « 14 / TO-5

DL-416 4 sq 50

50 1000 35 600.08

0.2537 / TO-8

DLS-4 25 300 30 40 0.30

DL-10 100 10 sq 100 500 5000 175 375 0.20 0.60 34 / Special

DL-20 400 20 sq 200 2000 12000 600 1500 1.00 1.0 35 / Special

Two-Dimensional Series, Ceramic Package § (VBIAS=-5V)

DLS-10 100 10 sq0.3 0.4

100 50 400 160 200 0.20 0.705 25

-10

~

+60

-20

~

+80 36 / Ceramic

DLS-20 400 20 sq 200 100 1000 580 725 1.00 1.2

Two-Dimensional Series, Low-Cost Ceramic Package (VBIAS=-5V)

DL-10C 100 10 sq0.3 0.4

100 500 5000 175 375 0.20 0.605 25

-10

~

+60

-20

~

+80

38 / Ceramic

DL-20C 400 20 sq 200 2000 12000 600 1500 1.00 1.0 39 / Ceramic

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

52

Tetra-Lateral PSD’sPosition Sensing Detectors (PSD)

FEATURES •SingleResistivityLayer •HighSpeedResponse •HighDynamicRange •VeryHighResolution •SpotSize&ShapeIndependence

APPLICATIONS •ToolAlignmentandControl •LevelingMeasurements •AngularMeasurements •3DimensionalVision •PositionMeasuring

Tetra-lateral position sensing detectors aremanufactured with one single resistive layer

for both one and two dimensional measurements. They feature a common anode and

twocathodesforonedimensionalpositionsensingor fourcathodesfor twodimensional

positionsensing.

These detectors are best when used in applications that require measurement over a wide spacial range. They offer high response uniformity, low dark current, and good position linearity over 64% of the sensing area.

Areversebiasshouldbeappliedto thesedetectors toachieveoptimumcurrent linearity

whenlargelightsignalsarepresent.Thecircuitontheoppositepagerepresentsatypical

circuitsetupfortwodimensionaltetra-lateralPSDs.Forfurtherdetailsaswellasthesetup

foronedimensionalPSDsrefertothe“PhotodiodeCharacteristics”sectionofthecatalog.

Notethatthemaximumrecommendedincidentpowerdensityis10mW/cm2.Furthermore,

typicaluniformityofresponsefora1mmspotsizeis±5%forSC-25DandSC-50Dand

±2%forallothertetra-lateraldevices.

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

Typical Position Dectectability Typical Spectral Response



LSC-5D « 11.5 5.3 x 2.20.35 0.42

0.040 0.01 0.10 50 0.25 2 50

-10

~+

60

-20

~+

70

47 / Plastic

LSC-30D « 122 30 x 4.1 0.240 0.025 0.250 300 3.00 4 100 46 / Plastic

Tetra-Lateral Position SensorsTypical Electro-Optical Specifications at TA=23ºC

†Risetimespecificationsarewitha1mmφspotsizeatthecenterofthedevice.¶Formechanicaldrawingspleaserefertopages61thru73.*Non-CondensingtemperatureandStorageRange,Non-CondensingEnvironment.

Chipcenteringwithin±0.010".


For further details, refer to the “Photodiode Characteristics” section of the catalog.

Mod

el N

um

ber

Position Sensing Area

Responsivity(A/W)

AbsolutePosition Detection

Error(mm)

Dark Current(µA)

Capacitance(pF)

RiseTime †(µs) Inter-

electrodeResistance

(kΩ)

TempRange(˚C)

PackageStyle ¶

Are

a (m

m2)

Dim

ensi

ons

(mm

)670 nm

Over80% of Length64% of Area

-15 V -15 V-15 V

670 nm50Ω

Oper

atin

g

Sto

rage

min. typ. typ. typ. max. typ. typ. min. max.

One-Dimensional Series, Plastic Package

Two-Dimensional Series, Metal PackageSC-4D 6.45 2.54 sq

0.35 0.42

0.080 0.005 0.050 20 0.66

3 30

0 ~

+ 7

0

-20

~ +

80

41 / TO-5

SC-10D 103 10.16 sq 1.30 0.025 0.250 300 1.00 44 / Special

SC-25D 350 18.80 sq 2.5 0.10 1.0 1625 5.00 45 / Special

SC-50D 957 30.94 2q 5.0 0.25 2.5 3900 5.00 21 / Special

5454

Sum and Difference Amplifier ModulesPosition Sensing Modules

FEATURES •OtherQD7-XXorQD50-XXareavailableuponrequest

INPUTPower supply voltage Vcc = ±4.5V min; ±15V typical; ±18V max

Photodiode bias voltage = (.91) x (VPDBIAS)

VPDBIAS = 0 TO +Vcc; Absolute maximum VPDBIAS is +Vcc

NOTE: Negative voltages applied to PDBIAS will render theQD7-0-SD or QD50-0-SD inoperative.

MAXIMUM OUTPUT VOLTAGEPositive: (+Vcc - 3V)

Negative: (- Vcc + 3V)

ENVIRONMENTALOperating temperature 0 to 70° C

Theoretical noise 15 nV/Hz½

Frequency response (-3dB): 120kHz @ VPDBIAS=0V;880nm 250kHz @ VPDBIAS=15V;880nm

Max slew rate 10V/µs

Output current limit 25 mA

Mod

el N

um

ber

Active AreaTotal

Elem

ent

Gap

(m

m) Responsivity

(A/W)Capacitance

(pF)Dark Current

(nA)

NEP(W/Hz) Reverse

Voltage(V)

RiseTime(ns)

TempRange(˚C)

PackageStyle ¶

Are

a (m

m2)

Dim

ensi

ons

(mm

) 900 nm 0 V 0 V900 nm

-30 V900 nm

50 Ω

Oper

atin

g

Sto

rage

min. typ. typ. typ. max. typ. max. typ.

‘O’ SeriesQD7-0 7 3.0 φ

0.2 0.47 0.5420 4.0 15.0 9.0 e-14

30 10

-40

~

+10

0

-55

~

+12

5 41 / TO-5

QD50-0 50 8.0 φ 125 15.0 30.0 1.3 e-13 70 / TO-8

APPLICATIONS •PositionMeasuring •BeamCentering •Targeting •GuidanceSystems

Values given as per element unless otherwise stated

QD7-0-SD or QD50-0-SD arequadrantphotodiodearrayswith associ-atedcircuitrytoprovidetwodifferencesignalsandasumsignal.Thetwo

differencesignalsarevoltageanalogsoftherelativeintensitydifferenceof

thelightsensedbyopposingpairsofthephotodiodequadrantelements.

Inadditiontheamplifiedsumofall4quadrantelementsisprovidedasthe

sumsignal.ThismakestheQD7-0-SDorQD50-0-SDidealforbothlight

beamnullingandpositionapplications.Verypreciselightbeamalignments

arepossible,andthecircuitcanalsobeusedfor targetacquisitionand

alignment.

OUTPUTWhere ix is the current from quadrant x

VT-B = -(i1 +i2) - (i3 + i4) x (104)

VL-R = -(i2 +i3) - (i1 + i4) x (104)

VSUM = -(i1 + i2 + i3 + i4) x (104)

55World Class Products - Light Sensing Solutions 55

4X4D4x4 Silicon Array Detectors

•Non-condensingtemperatureandstoragerange,Non-condensingenvironment.•AllElectro-Opticalspecificationsaregivenonaperelementbasis.•UDT-4X4D:NEPtestedat810nm*

Mod

el N

um

ber

Active Area

Pea

k

Res

pon

sivi

tyW

avel

ength

Responsivity(A/W)

Capacitance(pF)

ShuntResistance

(MΩ)

NEP(W/√Hz) Crosstalk

Temp.Range(˚C)

PackageStyle ¶

Are

a (m

m2)

Dim

ensi

ons

(mm

)

λpnm 632nm 0 V -10 mV

0 V632nm 0 V

632nm

Oper

atin

g

Sto

rage0 V

810nm*

typ. min. typ. typ. min typ. typ. typ.

4 x 4 Array Detectors

PIN-4X4D 1.96 1.4 x 1.4 850 --- 0.35 75 50 0.01 5.2e-14 1 -20 ~

+60 -20 ~

+80 Ceramic LCC

UDT-4X4D* 1.0 1.0 x 1.0 810 0.35 0.40 35 1.0 0.01 1.0e-14* 0.02% -20 ~

+60 -20 ~

+80 Ceramic LCC

FEATURES •SpeedyResponse •ExtremelyLowCross-talk •SurfaceMountDesign

APPLICATIONS •ScatteringMeasurements •PositionSensing

ThePIN-4X4D isa4by4arrayofsuperblueenhancedPhotodetectors.Ourproprietarydesignprovidesvirtuallycompleteisolationbetweenallof

the16elements.ThestandardLCCpackageallowseasyintegrationinto

your surface mount applications. Numerous applications include Ratio

andScatteringmeasurements,aswellasPositionSensing.Forcustom

packages, special electro-optic requirements,or toorder theseparts in

dieform,pleasecontactourApplicationsgroup.

0. 60

0. 50

0. 40

0. 30

0. 20

0. 10

0. 00

200 300 400 500 600 700 800 900 1000 1100


PIN-4X4D

UDT-4X4D

56

Topviewsareshownwithoutwindow

Allunitsininches.

PIN-4X4D

4x4 Silicon Array Detectors

Topviewsareshownwithoutwindow

Allunitsininches.

Mechanical Specifications

UDT-4X4D


Normalized LED Output vs. Angular Distribution

Dual Emitter / Matching Photodetector SeriesMolded Lead Frame and Leadless Ceramic Substrate

FEATURES •LeadlessceramicSubstrate •LeadFrameMoldedPackages •TwoandThreeLeadDesigns •Bi-WavelengthsLEDs •MatchingDetectorResponse

APPLICATIONS •SpO2

•Bloodanalysis •MedicalInstrumentation •RatiometricInstruments

Typical Spectral Response Typical Capacitance vs. Reverse Voltage

Normalized LED Output vs. Forward Current

TheDual LED series consists of a 660nm (red) LED and a companion

IRLED such as 880/ 895, 905, or 940nm. They are widely used for

radiometric measurements such as medical analytical and monitoring

devices. They can also be used in applications requiring a low cost

Bi-Wavelengthlightsource.Twotypesofpinconfigurationsareavailable:

1.) three leads with one common anode or cathode, or 2.) two leads

parallel back-to-back connection. They are available in two types of

packaging. Clear lead framemolded side looker, and leadless ceramic

substrate.

The matching Photodetector’ responses are optimized for maximum

responsivity at 66nmaswell as near IRwavelengths. They exhibit low

capacitance and low dark currents and are available in three different

activeareasizesinthesametwotypesofpackagingasthedualemitters:

Clearleadframemoldedsidelookerandleadlessceramicsubstrate.

58

*InBack-to-Backconfiguration,theLED’sareconnectedinparallel.«Minimumorderquantitiesapply

LED

PeakWavelength

RadiantFlux

SpectralBandwidth

ForwardVoltage

ReverseVoltage

nm nW nm V V

if=20mA if=20mA if=20mAFWHN

if=20mA if=20mA

typ. typ. typ. max. max.

Dual Emitter / Matching Photodetector SeriesMolded Lead Frame and Leadless Ceramic Substrate

Formechanicaldrawingsandpinlocations,pleaserefertopages61to77.«Minimumorderquantitiesapply

Formechanicaldrawings,pleaserefertopages61thru73.

Mod

el N

um

ber

LED’s Used PackageStyle ¶ Pin Configuration

Operating Temperature

Storage Temperature

nm ˚C ˚C

Dual Emitter Combinations «DLED-660/880-LLS-2

660

880


2 Leads / Back to Back*

-25

~ +

85

-40

~ +

80

DLED-660/895-LLS-2 895

DLED-660/905-LLS-2 905

DLED-660/905-LLS-3 9053 Leads / Common Anode

DLED-660/940-LLS-3 940

DLED-660/880-CSL-2 880

63 / Side Looker Plastic

2 Leads / Back to Back*DLED-660/895-CSL-2 895

DLED-660/905-CSL-2 905

DLED-660/905-CSL-3 9053 Leads / Common Anode

DLED-660/940-CSL-3 940

Mod

el N

um

ber

Active Area SpectralRange Responsivity Capaci-

tance

Dark Current

(nA)

Max.ReverseVoltage

OperatingTemp.

StorageTemp.

PackageA

rea

mm

2

Dim

ensi

ons

mm nm

A / W pF -10 V V

°C °C660nm 900nm -10 V typ. 10µA

Photodiode Characteristics «

PIN-0.81-LLS

0.81 1.02 φ

350 -1100 0.33 0.55

2.0 2

20

-25

~ +

85

-40

~ +

100C

62 /LeadlessCeramic

PIN-0.81-CSL 60 / Molded LeadFrame

PIN-4.0-LLS

3.9 2.31 x 1.68 10 5

62 /LeadlessCeramic


PIN-8.0-LLS

8.4 2.9 Sq. 25 10

62 /LeadlessCeramic


660nm 660 1.8 25 2.4

5

880nm 880 1.5 80 2.0

895nm 8952.0

50

1.7905nm 905

935nm 9351.5 1.5

940nm 940

LED Characteristics


Photodiode Care and Handling Instructions

AVOID DIRECT LIGHTSince the spectral response of silicon photodiode includes the visible light region, caremust be taken to avoid photodiode exposure tohighambient light levels,particularly fromtungstensourcesorsunlight.Duringshipment fromOSIOptoelectronics,yourphotodiodesarepackagedinopaque,paddedcontainerstoavoidambientlightexposureanddamageduetoshockfromdroppingorjarring.

AVOID SHARP PHYSICAL SHOCKPhotodiodes can be rendered inoperable if dropped or sharply jarred. Thewire bonds are delicate and can become separated from thephotodiode’sbondingpadswhenthedetectorisdroppedorotherwisereceivesasharpphysicalblow.

CLEAN WINDOWS WITH OPTICAL GRADE CLOTH / TISSUEMostwindowsonOSIOptoelectronicsphotodiodesareeithersiliconorquartz.Theyshouldbecleanedwith isopropylalcoholandasoft(opticalgrade)pad.

OBSERVE STORAGE TEMPERATURES AND HUMIDITY LEVELSPhotodiodeexposuretoextremehighorlowstoragetemperaturescanaffectthesubsequentperformanceofasiliconphotodiode.Storagetemperature guidelines are presented in the photodiode performance specifications of this catalog. Please maintain a non-condensingenvironmentforoptimumperformanceandlifetime.

OBSERVE ELECTROSTATIC DISCHARGE (ESD) PRECAUTIONSOSIOptoelectronicsphotodiodes,especiallywith ICdevices(e.g.Photops)areconsideredESDsensitive.ThephotodiodesareshippedinESDprotectivepackaging.Whenunpackingandusingtheseproducts,anti-ESDprecautionsshouldbeobserved.

DO NOT EXPOSE PHOTODIODES TO HARSH CHEMICALSPhotodiodepackagesand/oroperationmaybeimpairedifexposedtoCHLOROTHENE,THINNER,ACETONE,orTRICHLOROETHYLENE.

INSTALL WITH CAREMost photodiodes in this catalog are providedwith wire or pin leads for installation in circuit boards or sockets. Observe the solderingtemperaturesandconditionsspecifiedbelow:

Photodiodesinplasticpackagesshouldbegivenspecialcare.Clearplasticpackagesaremoresensitivetoenvironmentalstressthanthoseofblackplastic.Storingdevices inhighhumiditycanpresentproblemswhensoldering.Since the rapidheatingduringsolderingstressesthewirebondsandcancausewiretobondingpadseparation,itisrecommendedthatdevicesinplasticpackagestobebakedfor24hoursat85°C.

The leads on the photodiode SHOULD NOT BE FORMED. If your application requires lead spacing modification, please contact OSIOptoelectronicsApplicationsgroupat(310)978-0516beforeformingaproduct’sleads.Productwarrantiescouldbevoided.

Soldering Iron: Soldering 30 W or less Temperature at tip of iron 300°C or lower.

Dip Soldering: Bath Temperature: 260±5°C. Immersion Time: within 5 Sec. Soldering Time: within 3 Sec.

Vapor Phase Soldering: DO NOT USE

Reflow Soldering: DO NOT USE

*Most of our standard catalog products are RoHS Compliant. Please contact us for details

Mechanical Specifications

180 ºC

200 ºC

240 ºC

260 ºC8 sec. Max

30 sec. Max@ 240 ºC

120 sec. Max (Preheat)

SMD (BPW34 S) IR Reflow Solder Profile (Lead-free)

SMD Metal Plating: Silver

Pb Free Solder Paste: Sn96.5/Ag3.0/Cu0.5 Sn 97/Ag3.0

Manual Soldering (Lead-free)

Soldering Iron: Soldering 30 W or less.Temperature at tip of iron 300ºC or lower.

60

Mechanic

al D

raw

ing

sM

echan

ical Specifi

cation

s and

Die To

po

grap

hy

For Further AssistancePlease Call One of Our ExperiencedSales and Applications Engineers

- Or -visit our website at

www.osioptoelectronics.com

61

1. Parameter Definitions: A= Distancefromtopofchiptotopofglass. a= PhotodiodeAnode. B= Distancefromtopofglasstobottomofcase. c= PhotodiodeCathode (Note:cathodeiscommontocaseinmetalpackageproductsunlessotherwisenoted).

W= WindowDiameter. F.O.V.=FiledofView(seedefinitionbelow).

2. Dimensions are in inches (1 inch = 25.4 mm).

3. Pin diameters are 0.018 ± 0.002" unless otherwise specified.

4. Tolerances (unlessotherwisenoted) General: 0.XX±0.01" 0.XXX±0.005" ChipCentering: ±0.010" Dimension‘A’: ±0.015"

5. Windows All‘UV’EnhancedproductsareprovidedwithQUARTZglasswindows, 0.027±0.002"thick. All‘XUV’productsareprovidedwithremovablewindows. All‘DLS’ PSDproductsareprovidedwithA/Rcoatedglasswindows. All‘FIL’photoconductiveandphotovoltaicproductsareepoxyfilled insteadofglasswindows.

310-978-0516

62

Mechanical SpecificationsAll units in inches. Pinouts are bottom view.

PIN-44DI, PIN-44DPI,

PIN-6DI, PIN-6DPIAPD50-8-150-TO8

P/N A

PIN-6DI/6DPI 0.115

PIN-2DIPIN-2DPIPIN-3CDIPIN-3CDPI

PIN-3CDPIN-3CDPBPX-65OSD1-0OSD1-5TOSD3-5TOSD1-EOSD3-E

PIN-5DPIN-5DPPIN-5DP/SBPIN-13DPIN-13DPPIN-005E-550F

UV-001UV-005UV-005DQUV-005EQUV-013DQUV-013EQUV-015

P/N A B

PIN-3CD / 3CDP 0.087 0.146

BPX-65 0.075 0.200

OSD-Prefix Devices 0.080 0.200

P/N A B W

All Others 0.094 0.180 0.240

CD-25T 0.050 0.130 0.23

P/N A B W

PIN-020A 0.075 0.200 0.155

PIN-040A 0.075 0.200 0.155

PIN-5DIPIN-5DPIPIN-13DIPIN-13DPIPIN-5-YAGCD-25T

PIN-020APIN-040APIN-040-DP/SB

PIN-6DPIN-6DPPIN-44DPIN-44DPUV-020UV-035DQUV-035EQUV-035

PIN-HR005PIN-HR008PIN-HR020PIN-HR026PIN-HR040

PIN-125DPL

OSD-5-0OSD15-0OSD5-5TOSD15-5T

PIN-6DIPIN-6DPIPIN-44DIPIN-44DPI

APD50-8-150-TO8

PIN-44DI/44DPI 0.125APD50-8-150-TO8

UV-035DQ, UV-035EQ

PIN-5D, PIN-5DP, PIN-5DP/SB,PIN-13D, PIN-13DP, PIN-005E-550F

UV-005DQ, UV-005EQ, UV-013DQ, UV-013EQ15OSD-5-0, OSD15-0, OSD5-5T, OSD15-5T

OSD5.8-7Q, OSD5.8-7U

Quartz Window: OSD5.8-7QUV Transmissive Window: OSD5.8-7U

Quartz Window: OSD1.2-7QUV Transmissive Window: OSD1.2-7U

UV-001, UV-005, UV-015

Dimensions

A B

A

0.090

B

0.150

A B

P/N

OSD-Prefix Devices

UV-XXXDQ

UV-XXXEQ

All Others

A

0.050

0.065

0.055

0.102

B

0.130

0.138

0.138

0.180

P/N

UV-035DQ

UV-035EQ

All Others

A

0.130

0.120

0.140

B

0.195

0.195

0.205



Products:

PIN-10DIPIN-10DPIPIN-10DPI/SBUV-50LUV-100L

Products:

PIN-10DPIN-10DPPIN-10DP/SBUV-50UV-100UV-100DQUV-100EQ

Products:

PIN-25DPIN-25DP

Products:

PIN-10APPIN-10DF

Products: Products:

FIL-UV50

Low Profile10 BNC11 BNC12

Special BNC13 TO-514 Special Plastic15

1.000

0.975

0.195

1.2300.750

0.575(W)

0.100

A B

0.200

1.0000.675

B

1 2 3 4

8 7 6 5

FILTER CAP

1.230

A

B

C

0.700(W)

0.750

1

3

2

0.125

0.695(W)

0.975

0.175

0.560

0.092 0.100

0.630

0.470

0.252

0.560

0.470

0.695(W)

1.675

1.302(W)

Pin Circle Dia.=0.73

Outer Contact — Anode PIN-10D, PIN-10DP, PIN-10DP/SB UV-100DQ, UV-100EQ

Outer Contact — Cathode UV-50, UV-100

Outer Contact — Anode

P/N A B C

PIN-10DF 0.217 0.330 1.020

PIN-10AP 0.386 0.550 1.415

Dimensions Pinouts

Dimensions

3 Case

2c

1a

P/N A B

0.090 0.155

P/N

FIL-UV50

1 2 3 4 5 6 7 8

c - - a c - - a

FIL-UV50

DLS-2S

A

A

C C

Pin Circle Dia.= 0.200Bottom View

0.360

0.325

0.240

0.0860.180

0.500

0.018

64


BPW34BPW34BBPW34S

0.1770.169

0.0350.028

0.2640.240

0.0670.059

0.047MAX

CATHODE

0.004MIN

0.032

0-5˚

0.1570.150

BPW34S

typ15°



TO-522

Products:

XUV-005

Products:

XUV-020XUV-035

Products:

PIN-DSIn-TEC

TO-823 TO-824

Special Ceramic / Plastic25

Products:

RD-100RD-100AUV-35PUV-005EQCUV-035EQCUV-100EQCUV-005DQCUV-035DQCUV-100DQCXUV-50CXUV-100COSD35-LR-AOSD35-LR-D

Products:PIN-RD07PIN-RD15

TO-826

Special Plastic27

Products:

PIN-220DPIN-220DPPIN-220DP/SB

Products:

XUV-100

BNC28

0.600

0.525

0.435

0.113

0.231

(W)

0.550

0.485

0.430(W)

0.375

0.500

0.075

0.225

0.375

0.201

0.530

0.120

0.550

0.460

0.065

0.360

0.285

0.090

A

B

C

0.310

0.209

0.118

0.076

0.650

0.236

0.626

0.450

0.560

1.250

1.575

0.975

0.625

0.083

0.390

0.470

NotchIndicates

Anode Pin

0.080

0.390 Min.D

3a

3 1 3 1

1

5

4

81c

c a

3a 1c

3c

3 1

2

1a

2 Case



Pin Diameter=0.040BNC Connector

Outer Contact = Cathode


P/N A B C D

UV-005EQC 0.300 0.236 0.024 0.177UV-035EQC 0.400 0.350 0.028 0.290UV-100EQC 0.650 0.590 0.028 0.490

UV-005DQC 0.300 0.236 0.035 0.177UV-035DQC 0.400 0.350 0.039 0.290UV-100DQC 0.650 0.590 0.039 0.490

XUV-50C 0.650 0.590 0.027 0.490XUV-100C 0.650 0.590 0.027 0.490RD-100 0.650 0.590 0.027 0.490RD-100A 0.650 0.590 0.027 0.490

UV-35P 0.390 0.345 0.050 0.275

Dimensions

1 TEC (-)

2 Thermistor

3 Thermistor

4 TEC (+)

5 Top Silicon, Cathode

6 Top Silicon, Anode

7 Bottom InGaAs, Anode

8 Bottom InGaAs, Cathode

Pinout

OSD35-LR-AOSD35-LR-D

0.3900.390

0.3500.350

0.2900.290

------

Note: OSD35-prefix packages come with 0.31” (min.) leads

66


UDT-455UDT-455UVOSI-515

UDT-020DPIN-020UV

UDT-020D Pinout PIN-020UV

SPOT-13-YAG-FLSPOT-11-YAG-FL

Side View

Bottom View Enlarged

.750 Dia.

.795

.9721.04

.433

.181.086

OSI-515 pin 1 & 5 are N/C



0.255

68


SC-4DSL3-1SPOT-2DSPOT-3DSPOT-4DSPOT-4DMIQD7-0

SL5-1SPOT-2DMI

SPOT-9DSPOT-9DMI

SC-10D SC-25D

QD7-0 0.050 0.130 0.230

QD7-0


Mechanical SpecificationsAll units in inches.

70


Products:

SL-30

Products:

A2V-76

Products:

A2V-16

Products:

A5V-35UVA5C-35A5C-38A5V-35A5V-38

Products:

A5C-35, A5C-38A5V-35, A5V-38

Low Cost Ceramic51 Special 52 Special 53

40-PIN-DIP54 Special55

B

0.600

A

2.000

2.0002.095

40 39 38 22 21

12

3 19 20

1.735

1.400

1.018

1.600

C 0.7870.910 0.316

67 71 75

Ellipse0.151 X 0.128

Circular Hole0.128 Dia.

0.0300.115

0.310

0.100 Typ.

201

2140

0.020

0.100

0.075

0.375 0.280

0.590

A C

C A

0.385

0.6000.79035 or 38

Array Elements

76 Element Array

Two Rows of PinsEven Numbered Pins these Rows

Two Rows of PinsOdd Numbered Pins these Rows

0.105 0.130

0.225

0.110

0.180

E

F

D

0.018

Pin Element Pin Element Number Number Number Number

1 C 21 C 2 2 22 35 3 4 23 33 4 6 24 31 5 8 25 29 6 10 26 27 7 12 27 25 8 14 28 23 9 16 29 21 10 18 30 19 11 -- 31 17 12 20 32 15 13 22 33 13 14 24 34 11 15 26 35 9 16 28 36 7 17 30 37 5 18 32 38 3 19 34 39 1 20 C 40 C

Pin Diameter = 0.025

35 Element Array

A5V-35UV

Pin Element Pin Element Number Number Number Number

1 C 21 C 2 2 22 37 3 4 23 35 4 6 24 33 5 8 25 31 6 10 26 29 7 12 27 27 8 14 28 25 9 16 29 23 10 18 30 21 11 20 31 19 12 22 32 17 13 24 33 15 14 26 34 13 15 28 35 11 16 30 36 9 17 32 37 7 18 34 38 5 19 36 39 3 20 38 40 1

38 Element Array

DimensionsP/N A B C D E FA2V-16 1 0.1 0.212 0.2 0.062 0.06

0.28

0.200.05

RED DOTINDICATESCATHODE

LEAD

0.11 NOM.

0.45 MIN.

0.039 DIA.

1.09 DIA.

0.82 DIA.WINDOW

1.25DIA.0.75

DIA.

OSD100-0AOSD100-5TA



Ceramic LCC

SMT

PIN-0.81-CSLPIN-4.0-CSLPIN-8.0-CSLPIN-08-CSLPIN-16-CSLPIN-08-CSL-F

UDT-4X4D BI-SMT

PIN-4X4DPIN-07CSLPIN-07FSL

PIN-07SLRPIN-07FSLR

Dimensions in inches

Model Number

33BI-SMT

55BI-SMT

1010BI-SMT

A

0.118

0.197

B

0.11

0.189

0.386

C

0.031

0.051

0.051

D

0.02

0.039

0.039

E

0.043

0.071

0.1630.394

F

0.024

0.024

0.059

Pad Assignments:Cathode: 1, 3, 5, 7Anode: 2, 4, 6, 8

72


Products:

PIN-0.81-LLSPIN-4.0-LLSPIN-8.0-LLS

OS-P085 OS-W200AOS-W200B

OS-P-190

Products:

DLED-660/ 880-CSL-2DLED-660/ 895-CSL-2DLED-660/ 905-CSL-2DLED-660/ 905-CSL-3DLED-660/ 940-CSL-3

Products:

DLED-660/ 880-LLS-2DLED-660/ 895-LLS-2DLED-660/ 905-LLS-2DLED-660/ 905-LLS-3DLED-660/ 940-LLS-3

Products: Products: Products:

Leadless Ceramic62 Lead Frame Molded63 Leadless Ceramic64

Plastic Molded65 Plastic Molded66 Plastic Molded67

Active Area

0.025

0.060 MAX. 0.210 0.035

0.200

0.335

2c 1a

0.220

0.07 0.032

0.500

0.010 0.050 0.100

DLED-XXX/XXX-CSL-3

IR 660nm

660nm

Back-to-Back Parallel

Connections

Common Anode

Connection

IR

DLED-XXX/XXX-CSL-2

0.113

0.225 0.225

0.025

0.060 Max.

0.040

0.050

0.225

Back-to-Back Parallel

Connections

IR 660nm

DLED-XXX/XXX-LLS-2

Common Anode

Connection

IR 660nm

DLED-XXX/XXX-LLS-3

Top View

Bottom View Bottom View

0.172

pitch = 0.05

0.175 0.53

0.005

0.170

0.085

0.154 0.05

0.100 0.244

660nm

Back-to-BackParallel

Connections

IR

DLED-660/905-CSL-2

0.355 0.345

14.9 MIN (4 PLCS)

STRIP 0.16±0.01

BLACK WIRE

0.305 0.295

0.205 0.153

0.13 0.050

WHITE WIRE YELLOW WIRE

RED WIRE

0.420 0.400 0.200

0.105

0.080 0.170

0.25

(-)

(+)

CATHODE

EMITTER

Bottom View

(L.E.D.)

ANODE

(PHOTOTRANSISTOR) 4 1

2 3

EMITTER IDENTIFICATION DOT

SENSOR IDENTIFICATION DOT

0.20

1 2

3

4 5 6

0.19

0.40

0.40

0.50

0.20 min

0.10 typ

PIN Description

1 Emitter Cathode

2 Emitter Anode

3 Emitter Anode

4 Phototransistor Collector

5 Phototransistor Emitter

6 Phototransistor Emitter

Pinout



TO-8

TO-52 TO-52L65 66 67

Plastic68 TO-8 69 TO-870

ANODE

0.04

0.61

0.08

0.16MAX.

0.012 DIA.0.018 DIA.

CATHODE

0.12 DIA.0.55 DIA.

0.17

0.50 MIN.

0.018 DIA.CATHODE &CASE

ANODE

0.44DIA.

0.08NOM.

0.60DIA.0.40

DIA.

0.55 DIA.

0.17

0.50 MIN.

0.018 DIA.

0.44DIA.

0.60DIA.

0.08NOM.

0.10TYP.

0.40

Q4

Q3

CATHODE &CASE

QUADRANTANODE 1

Q2 6 5 4

1 2 3

CD-1705 OSD60-0OSD60-5TOSD60-E

QD50-0

TO-5 Plastic Molded

0.213 0.213

APD02-8-150-T52APD05-8-150-T52APD10-8-150-T52

APD02-8-150-T52LAPD05-8-150-T52LAPD10-8-150-T52L

0.185 0.1850.059

0.1500.128.091

0.098

0.551 min.

0.098(W)

0.551 min.

APD15-8-150-TO5APD30-8-150-TO5

0.511 min.

.163

0.098

0.026

74

Die TopographyAll chip dimension are in millimeters (inches in parentheses).

The following die topographies are for reference only. They shall not be used for any design purposes.Consult an Applications Engineer for

further details and accurate dimensions.


Die TopographyAll chip dimension are in millimeters (inches in parentheses).

76

Die Topography

Custom Die Topography

SPOT-15-YAG SPOT-9-YAG14

.00

(0.5

51)

0.200 (0.008) 0.100 (0.004)

10.2

6 (0

.404

)

12.0

0 (0

.472

)

16.6

5 (0

.656

)

16.65 (0.656) 12.00 (0.472)

All chip dimension are in millimeters (inches in parentheses).


Custom Photodiode FormPlease fill out the items in the tables below in order to assist us in selecting the most appropriate item for your requirements. You may not need, or able to complete ALL items. Hence, simply fill out what you can and fax or mail the form directly to the factory or one of our sales representatives. We will return back to you with a prompt quotation.

78

1.2

1.0

0.8

0.6

0.4

0.2

0.0800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800

Wavelength (nm)

Res

pons

ivity

(A/W

)

Typical Spectral Responsivity (InGaAs)

Figure 1.1

Figure 1.2

Figure 1.4

METALLIZATIONPAD

P+LAYER

N TYPE InGaAs ABSORPTION LAYER

N TYPE InP BUFFER LAYER

N+ TYPE InP SUBSTRATE

METALLIZATION

InP CAP LAYER

AR LAYER

0.5

0.4

0.3

0.2

0.1

0.0400 500 600 700 800 900 1000 1100

Wavelength (nm)

Res

pons

ivity

(A/W

)

Typical Spectral Responsivity (Si)

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0400 600 800 1000 1080

Wavelength (nm)

Res

pons

ivity

(A/W

)

Typical Spectral Responsivity (GaAs)

1.00E-08

1.00E-09

1.00E-10

1.00E-11

0 1 2 3 4 5 6 7 8 9 10


Dar

k C

urre

nt (A

)

Typical Dark Current vs. Reverse Bias Voltage (500m InGaAs in TO-package)

Figure 1.5

Figure 1.3

Application Notes

OSI Optoelectronics, is a leading manufacturer of fiber optic components for communication systems. The products offer range for Silicon, GaAs and InGaAs to full

turnkey solutions.

Photodiodes are semiconductor devices responsive to high energyparticlesandphotons.Photodiodesoperatebyabsorptionofphotonsorchargedparticlesandgenerateaflowofcurrentinanexternalcircuit,proportionaltotheincidentpower.Planardiffusedsiliconphotodiodesare P-N junction diodes. A P-N junction can be formed by diffusingeitheraP-typeimpurity,suchasBoron,intoaN-typebulkorepitaxialsiliconwafer,oraN-type impurity,suchasPhosphorus, intoaP-typebulkorepitaxialwafer.Thediffusedareadefinesthephotodiodeactivearea. To form an ohmic contact, another impurity diffusion into thebacksideofthewafer isnecessary. TheactiveareaiscoatedwithanAnti-Reflectioncoatingtoreducethereflectionofthelightforaspecificpredefinedwavelength.ThePandN-sidesof the junctionhavemetalpads,whichmakeanelectricalcontactthroughdielectriclayers.

For applications within the wavelength range of 1.3µm - 1.55µm,photodiodesmadeonInGaAs/InPmaterialarewidelyusedduetothesuperior speed, responsivityand lownoisecharacteristics.Figure 1.1 shows the schematic cross-section of OSI Optoelectronics’s InGaAs/InPphotodiode.

Due to the high absorption coefficient, the InGaAs absorption regionis typicallya fewmicrometersthick. Thethinabsorption layerenablesthedevicetoobtainhighspeedata lowreversebiasvoltage,typically2-5 volts. The InP window layer is transparent to 1.3µm - 1.55µmwavelengths,thusInGaAs/InPphotodiodesdonothaveslowtailimpulseresponseassociatedwiththeslowdiffusioncomponentfromthecontactlayer.

The typical spectral response curves of Silicon, GaAs, and InGaAsphotodiodesareshowninFigures1.2,1.3,1.4.Thebandgapenergiesof Si, GaAs, and InGaAs are 1.12eV, 1.42eV, and 0.75eV respectively.Thecutoffwavelengthsofphotodiodesmade from thesematerialsare1.10µmforSi,0.87µmforGaAs,and1.65µmforInGaAs

OSI Optoelectronics’s InGaAs/InP photodiodes are planar passivated.Thedarkcurrent is lowandverystable. Figure 1.5 shows the typicaldark current of FCI-InGaAs-500 as a function of reverse bias voltage.The relationship between dark current and temperature is shown inFigure 1.6.

Typical Spectral Responsivity (GaAs)

Typical Spectral Responsivity (InGaAs)

Typical Spectral Responsivity (Si) Typical Dark Current vs. Reverse Bias Voltage (500m InGaAs in TO-package)


Where Ws is the thickness of the substrate, Wd is the width of thedepletedregion,Aisthediffusedareaofthejunction,istheresistivityofthesubstrateandRcisthecontactresistance.Seriesresistanceisusedtodeterminetherisetimeandthelinearityofthephotodiode.

Junction Capacitance, C jThe boundaries of the depletion region act as the plates of a parallelplatecapacitor.Thejunctioncapacitanceisdirectlyproportionaltothediffused area and inversely proportional to the width of the depletionregion.Thecapacitanceisdependentonthereversebiasasfollows:

Where 0 is the permittivity of free space, is the semiconductordielectric constant, µ is the mobility of the majority carriers, is theresistivity, Vbi is the built-in voltage of the semiconductor of the P-Njunction and VA is the applied bias. Figure 1.8 shows the typicalcapacitanceofFCI-InGaAs-500asafunctionoftheappliedreversebiasvoltage. Junction capacitance is used to determine the speed of theresponseofthephotodiode.

Rise/Fall time and Frequency Response,t r / t f / f 3dBThe rise time and fall time of a photodiode is defined as the time forthesignal to riseor fall from10%to90%or90%to10%of the finalvaluerespectively.Thisparametercanbealsoexpressedasfrequencyresponse, which is the frequency at which the photodiode outputdecreasedby3dB.Itisroughlyapproximatedby:

1.60 E-011

1.50 E-011

1.40 E-011

1.30 E-011

1.20 E-011

1.10 E-011 0 1 2 3 4 5 6 7 8 9 10


Cap

acita

nce

(F)

Typical Capacitance vs. Reverse Bias Voltage (at f=1MHz, 500m InGaAs in TO-package)

Application Notes

+

–Figure 1.7

1.00E-08

1.00E-09

1.00E-10

25 35 45 55 65 75

Temperature (ºC)

Dar

k C

urre

nt (A

)

Typical Dark Current vs. Temperature (V=-5V, 500m InGaAs in TO-package)

Figure 1.6

Figure 1.8

Typical Dark Current vs Temperature (V=-5V, 500M InGaAs in TO-package)

ELECTRICAL CHARACTERISTICSA p-n junction photodiode can be represented by a current sourcein parallel with an ideal diode (Figure 1.7). The current sourcerepresentsthecurrentgeneratedbytheincidentphotons,andthedioderepresentsthep-n junction. Inaddition,a junctioncapacitanceCjandashuntresistanceRshareinparallelwiththeothercomponents.SeriesresistanceRsisconnectedinserieswithallcomponentsinthismodel.

Shunt Resistance, R shShunt resistance is the slope of the current-voltage curve of thephotodiodeattheorigin,i.e.V=0.Althoughanidealphotodiodeshouldhaveashuntresistanceofinfinite,actualvaluesrangefrom10sto1000sofMegaohms.Experimentallyitisusuallyobtainedbyapplying±10mV,measuringthecurrentandcalculatingtheresistance.Shuntresistanceis used todetermine thenoise current in thephotodiodewith nobias(photovoltaicmode).Forbestphotodiodeperformancethehighestshuntresistanceisdesired.

Series Resistance, R sSeries resistance of a photodiode arises from the resistance of thecontacts and the resistance of the undepleted semiconductors. It isgivenby:

Typical Capacitance vs. Reverse Bias Voltage (at f=1MHz, 500m InGaAs in TO-package)

80

TOTAL NOISEThetotalnoisecurrentgeneratedinaphotodetectorisdeterminedby:

Noise Equivalent Power (NEP) Noise Equivalent Power is the amount of incident light power on aphotodetector, which generates a photocurrent equal to the noisecurrent.NEPisdefinedas:

Where R is the responsivity in A/W and Itn is the total noise of thephotodetector.ForInGaAsphotodiodes,NEPvaluescanvaryfrom10-14W/√Hzforlargeactiveareadownto10-15W/√Hzforsmallactiveareaphotodiodes.

TEMPERATURE EFFECTSAllphotodiodecharacteristicsareaffectedbychanges in temperature.Theyincludeshuntresistance,darkcurrent,breakdownvoltage,andtoalesserextentotherparameterssuchasjunctioncapacitance.

Shunt Resistance and Dark Current:Therearetwomajorcurrentsinaphotodiodecontributingtodarkcurrentand shunt resistance. Diffusion current is the dominating factor in aphotovoltaic(unbiased)modeofoperation,whichdeterminestheshuntresistance.Itvariesasthesquareofthetemperature.Inphotoconductivemode(reversebiased),however,thedriftcurrentbecomesthedominantcurrent(darkcurrent)andvariesdirectlywithtemperature.Thus,changeintemperatureaffectsthephotodetectormoreinphotovoltaicmodethaninphotoconductivemodeofoperation.

Inphotoconductivemodethedarkcurrentmayapproximatelydoubleforevery10ºCincreasechangeintemperature.Andinphotovoltaicmode,shunt resistancemay approximately double for every 6ºC decrease intemperature.Theexactchange isdependentonadditionalparameterssuchastheappliedreversebias,resistivityofthesubstrateaswellasthethicknessofthesubstrate.

Breakdown Voltage:For small active area devices, breakdown voltage is defined as thevoltage at which the dark current becomes 10µA. Since dark currentincreases with temperature, therefore, breakdown voltage decreasessimilarlywithincreaseintemperature.

Thesearethreefactorsdefiningtheresponsetimeofaphotodiode:

1. tDRIFT,thedriftingtimeofthecarriersinthedepletedregion ofthephotodiode.

2. tDIFFUSED,thechargecollectiontimeofthecarriersinthe undepletedregionofthephotodiode.

3. tRC,theRCtimeconstantofthediode-circuitcombination.

tRC is determined by tRC=2.2RC, where R is the sum of the diodeseries resistance and the load resistance (Rs+RL), and C is the sumof the photodiode junction and the stray capacitances (Cj+Cs). Sincethe junction capacitance (Cj) is dependent on the diffused area of thephotodiodeandtheappliedreversebias,fasterrisetimesareobtainedwith smaller diffused area photodiodes, and larger applied biases. Inaddition, stray capacitance can be minimized by using short leads,andcarefullay-outoftheelectroniccomponents.Thetotalrisetimeisdeterminedby:

NOISEInaphotodiodetwosourcesofnoisecanbeidentified.ShotnoiseandJohnsonnoise

Shot NoiseShotnoiseisrelatedtothestatisticalfluctuationinboththephotocurrentandthedarkcurrent.Themagnitudeoftheshotnoiseisexpressedastherootmeansquare(rms)noisecurrent:

Where q=1.6x10-19C is the electron charge, Ip is the photogeneratedcurrent, Id is the photodetector dark current and ∆f is the noisemeasurementbandwidth.

Thermal or Johnson NoiseThe shunt resistance in the photodetector has a Johnson noiseassociatedwithit.Thisisduetothethermalgenerationofcarriers.Themagnitudeofthegeneratedcurrentnoiseis:

WherekB=1.38x10-23J/°K, is theBoltzmannConstant,T is theabsolutetemperatureindegreesKelvin(273°K=0°C),∆fisthenoisemeasurementbandwidth,andRshistheshuntresistanceofthephotodiode.Thistypeofnoiseisthedominantcurrentnoiseinphotovoltaic(unbias)operationmode.

Note: All resistors have a Johnson noise associated with them, including the load resistor. This additional noise current is large and adds to the Johnson noise current caused by the photodetector shunt resistance.

Application Notes


Application Notes

++

CF

CA

RF

R1R2

A1

A2

+15V 0.1μF

0.1μF

0.1μF

0.1μF -15V

-30V

+15V

-15V

Vout

Figure 1.10. Photoconductive mode of operation circuit example:Low Light Level / Wide Bandwidth

1.2

1.0

0.8

0.6

0.4

0.2

0.0800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800

Wavelength (nm)

+25C

Res

pons

ivity

(A/W

)

Spectral Response vs. Temperature for InGaAs

0C -25C

Figure 1.9. Typical Spectral Response versus Temperature for InGaAs

Spectral Response vs Temperature for InGaAs

Theresponsivityofaphotodiodeisameasureofthesensitivitytolight,andit isdefinedastheratioofthephotocurrentIptotheincidentlightpowerPatagivenwavelength:

Inanotherwords,itisameasureoftheeffectivenessoftheconversionofthelightpowerintoelectricalcurrent.Itvarieswiththewavelengthoftheincidentlightaswellasappliedreversebiasandtemperature.

Responsivityincreasesslightlywithappliedreversebiasduetoimprovedchargecollectionefficiency inphotodiode. Also thereare responsivityvariationsdue tochange in temperatureasshown inFigure 1.9. Thisisduetodecreaseorincreaseofthebandgap,becauseofincreaseordecreaseinthetemperaturerespectively.Spectralresponsivitymayvaryfromlottolotanditisdependentonwavelength.However,therelativevariationsinresponsivitycanbereducedtolessthan1%onaselectedbasis.

RESPONSIVITY, R BIASINGAphotodiodesignalcanbemeasuredasavoltageoracurrent.Currentmeasurement demonstrates far better linearity, offset, and bandwidthperformance.Thegeneratedphotocurrentisproportionaltotheincidentlightpoweranditmustbeconvertedtovoltageusingatransimpedanceconfiguration. The photodiode can be operated with or without anappliedreversebiasdependingontheapplicationspecificrequirements.They are referred to as “Photoconductive” (biased) and “Photovoltaic”(unbiased)modes.

Photoconductive Mode (PC)Applicationofareversebias(i.e.cathodepositive,anodenegative)cangreatlyimprovethespeedofresponseandlinearityofthedevices.Thisisduetoincreaseinthedepletionregionwidthandconsequentlydecreasein junctioncapacitance.Applyingareversebias,however,will increasethedarkandnoisecurrents.Anexampleoflowlightlevel/high-speedresponseoperatedinphotoconductivemodeisshowninFigure 1.10.

Inthisconfigurationthedetectorisbiasedtoreducejunctioncapacitancethusreducingnoiseandrisetime(tr).Atwostageamplificationisusedinthisexamplesinceahighgainwithawidebandwidthisrequired.Thetwo stages include a transimpedance pre-amp for current- to-voltageconversionandanon-invertingamplifier forvoltageamplification.Gainandbandwidth (f3dBMax) aredirectly determinedbyRF. Thegainof thesecondstageisapproximatedby1+R1/R2.Afeedbackcapacitor(CF)

WhereGBPistheGainBandwidthProductofamplifier(A1)andCAistheamplifierinputcapacitance.

In low speed applications, a large gain, e.g. >10MΩ can be achievedbyintroducingalargevalue(RF)withouttheneedforthesecondstage.

82

Typicalcomponentsusedinthisconfigurationare:

Amplifier:AD829,AD8011,OPA-637,orsimilarRF: 1to10kΩTypical,dependingonCj

R1: 10to50kΩ R2: 0.5to10kΩ CF: 0.2to2pF

In high speed, high light level measurements, however, a differentapproach is preferred. The most common example is pulse widthmeasurements of short pulse gas lasers, solid state laser diodes, orany other similar short pulse light source. The photodiode output canbe either directly connected to an oscilloscope (Figure 1.11) or fed toa fast response amplifier. When using an oscilloscope, the bandwidthof thescopecanbeadjustedto thepulsewidthof the lightsource formaximumsignaltonoiseratio.Inthisapplicationthebiasvoltageislarge.Twoopposingprotectiondiodesshouldbeconnectedtotheinputoftheoscilloscopeacrosstheinputandground.

Toavoidringingintheoutputsignal,thecablebetweenthedetectorandtheoscilloscopeshouldbeshort(i.e.<20cm)andterminatedwitha50ohmloadresistor(RL).Thephotodiodeshouldbeenclosedinametallicbox,ifpossible,withshortleadsbetweenthedetectorandthecapacitor,andbetweenthedetectorandthecoaxialcable.Themetallicboxshouldbetiedthroughacapacitor(C1),withleadlength(L)lessthan2cm,whereRL C1>10t(tisthepulsewidthinseconds).RSischosensuchthatRS<VBIAS/10IPDC,whereIPDCistheDCphotocurrent.Bandwidthisdefinedas0.35/t.Aminimumof10Vreversebiasisnecessaryforthisapplication.Note that a bias larger than the photodiodemaximum reverse voltageshouldnotbeapplied.

Photovoltaic Mode (PV)The photovoltaic mode of operation (unbiased) is preferred when aphotodiode is used in low frequency applications (up to 350 kHz) aswellasultra lowlight levelapplications. Inadditiontoofferingasimpleoperational configuration, the photocurrents in this mode have lessvariations in responsivitywith temperature.Anexampleof anultra lowlightlevel/lowspeedisshowninFigure 1.12.

In this example, a FET input operational amplifier as well as a largeresistancefeedbackresistor(RF)isconsidered.Thedetectorisunbiasedtoeliminateanyadditionalnoisecurrent.Thetotaloutputandtheop-ampnoisecurrentaredeterminedasfollows:

wherekB=1.38x10-23J/°KandTistemperaturein°K.

Forstability,selectCFsuchthat

Operatingbandwidth,aftergainpeakingcompensationis:

TheseexamplesoranyotherconfigurationsforsinglephotodiodescanbeappliedtoanyofOSIOptoelectronicssmonolithic,commonsubstratelineararrayphotodiodes.Theoutputofthefirststagepre-amplifierscanbeconnectedtoasampleandholdcircuitandamultiplexer.Figure 1.13 showstheblockdiagramforsuchconfiguration.

Figure1.13. Circuit example for a multi-element, common cathode array.

Figure 1.12. Photovoltaic mode of operation circuit

example:Low Light Level / Wide Bandwidth

+

CF

CAVout

+15V

-15V

RF=500MΩ

Application Notes

Figure 1.11. Photoconductive mode of operation circuit example:High Light Level / High Speed Response


Application Notes

PHOTODETECTOR WITH TRANSIMPEDANCE AMPLIFIER

Fiberoptic Receiver DesignOneofthemostcriticalpartinfibercommunicationsystemisreceiverofopticalsignal.Opticalreceiverdeterminesperformanceoftotalsystembecauseitisthelowestsignalpoint.Opticalsystemdesignermustpayspecialattentionwhendevelopingreceiverpart.

As it is shownonFigure 2.1, optical receiver indigital communicationsystem typically contains of PhotoDetector, TransimpedanceAmplifier(TIA), and Post Amplifier then followed by decision circuit. PhotoDetector (PD), typicallyPINorAvalanchePhotoDiode (APD),producesphotocurrentproportionaltotheincidentopticalpower.TransimpedanceamplifierconvertsthiscurrentintovoltagesignalandthenPostAmplifierbringthisvoltagetosomestandardlevel,soPostAmplifieroutputsignalcanbeusedbydecisioncircuit.

Indigitalopticalcommunicationsystembinarydatastreamistransmittedbymodulationof optical signal. Optical signalwith non-return-to-zero(NRZ)codingmayhaveoneoftwopossiblestateofopticalpowerlevelduringbit time interval.Higheropticalpower levelcorrespondsto logiclevel1, lower levelcorresponds to0. In the realsystemopticalpowerdoesnotequaltozerowhentransmittinglogical0.Let’sassume,that0statepowerequaltoP0and1-statepowerequaltoP1asitisindicatedonFigure 2.2.

ThesystemcanbedescribedintermsofAveragePowerPAVGandOpticalModulation Amplitude or Peak-to-Peak Optical Power PP-P. It is veryimportanttonotethatwewillconsiderbelowsystemswithprobabilitiestohave“one”or“zero”attheoutputequaltoeachother(50%).Sowecaneasilydetermine:

ExtinctionRatioreistheratiobetweenP1andP0:

ExtinctionratiocanbeexpressedintermsofdB:

Then,theaveragepowerintermsofpeak-to-peakpowerandextinctionratiois:

Forexample,iftheaverageopticalpoweroftheincidentsignalis–17dBmwhileextinctionratiois9dB.Then,PAVG=20µW;re=7.94.Peak-to-peakpowerwillbe:

Sensitivity and BER.Number of errors at the output of decision circuit will determine thequalityofthereceiverandofcoursethequalityoftransmissionsystem.Bit-error-rate (BER) istheratioofdetectedbiterrorstonumberoftotalbit transmitted. Sensitivity S of the optical receiver is determined asaminimumoptical power of the incident light signal that is necessaryto keep required Bit Error Rate. Sensitivity can be expressed interms of Average Power (dBm, sometimes µW) with given ExtinctionRatio (dB) or in terms of Peak-to-Peak Optical Power (µWP-P). BERrequirementsare specified fordifferent applications, for example sometelecommunication applications specify BER to be 10-10 or better; forsomedatacommunicationsitshouldbeequalorbetterthan10-12.

Noise is one of the most important factors of errors. Noise of PINPhotodiode in digital high-speed application system is typically muchlessthannoiseoftransimpedanceamplifier.ConsideringthermalnoiseofTIAasanonlynoiseinsuchasystemusuallygivesgoodresultforPD/TIAhybridanalysis.WecanestimateerrorprobabilityPEwhenassumingGaussiandistributionforthermalnoiseofamplifier:

where PE(0|1) and PE(1|0) probability to decide 0 instead of 1; and 1insteadof0correspondinglywhenwehaveequalprobabilitiesfor0and1inoursystem.

31

Optical Power

Time

PP-P

Figure 2.2. Optical Power Levels

Figure 2.1. Optical Receiver. Functional Block Diagram.

84

andSNR–signal-to-noiseratio,wheresignalisintermsofpeak-to-peakandnoiseisanRMSvalue.Graphoferfc(x)isshownonFigure 2.4 andsometabulatedSNRnumbersvs.BERaregiven

in the Table 1. Here we assume that PE = BER, but actual ErrorProbability equal to BER in ideal systemwhen time ofmeasurementsconsideredbeinginfinite.

Sowe can find peak-to-peak signal thatwe need to achieve requiredBER.

where IP-P is signal photocurrent, R – photodetector responsivityexpressedinA/W,IN,RMS–inputequivalentRMSnoiseofTIA.

to estimate the sensitivity of PD/TIA at certain BER, we need to findrequired SNR in the Table 1 and then calculate average power usingequation:

wherethefirsttermisthesensitivitywithaninfiniteextinctionratio,andthesecond isthecorrectionfor finiteextinctionratioorextinctionratiopenalty.SomenumbersforextinctionratiopenaltyareshowninTable 2.

Application Notes

1.00E-04

1.00E-05

1.00E-06

1.00E-07

1.00E-08

1.00E-09

1.00E-10

1.00E-11

1.00E-12

erfc(x)

x 3 4 5 6 7

Complimentary Error Function

BER

SNR

10-08

11.22

10-09

11.99

10-10

12.72

10-11

13.40

10-12

14.06

Table 2

Table 1

Figure 2.4 Complimentary Error Function

Figure 2.3. Probability Density Functions.

ProbabilitydensityfunctionDpforGaussiandistributionis:

where–distributionparameter,– isstandarddeviation, and– ismean value.Probability density functions are shownonFigure 2.3 fortwolevelsofsignal.

To estimate probability of incorrect decision, for example PE(1|0), weneedtointegratedensityfunctionfor0-distributionabovethresholdlevel.

Consideringsymmetricaldistributions (threshold is thehalfofpeak-to-peaksignalSP-P):

Thennormalizingto:

Ifdeviationsfor0and1levelsareequaltotalprobabilityoferrorwillbe:

whereerfc(x)isthecomplimentaryerrorfunction:


ForExample, let’s calculate the sensitivity for 2.5Gbps InGaAsPD/TIAhybridatBER=10-10, assuming responsivityofdetector tobe0.9A/W,inputRMSnoisecurrentofthetransimpedanceamplifier500nA,andtheextinctionratiooftheopticalsignal9dB.

First, we will find SNR required to achieve BER=10-10 from the Table 1. Therefore, SNR = 12.72. Then, we can calculate the sensitivityconsideringre=7.94:

orS=-23.4dBm

ForcombinationofsuchaPD/TIAHybridandPostAmplifierwithVTH=10mVassumingRTIA=2.8ksensitivitywillbe:

Application Notes

Figure 2.5. InGaAs PD/TIA hybrid: sensitivity for PD/TIA only (curve 1), calculated for PD/TIA with 10mV threshold Post Amplifier typical (curve 2) and minimum (curve 3), and actual measurements for PD/TIA-Post Amplifier system (X-points 4).

Tocalculatetotalreceiversensitivitywehavetoconsideralsosensitivityof Post Amplifier or Input Threshold Voltage VTH. Sensitivity of PostAmplifier shouldbe indicated in thePostAmplifierDatasheet and it isusually expressed in peak-to peak Volts value (mVP-P). To achieve thesameBERweneedtoincreasepeak-to-peakcurrentatleastbyvalueof:

whereRTIAistransimpedancecoefficientofTIA.

Peak-to-peakopticalpowerwillbe:

andsensitivity:

Figure 2.5 shows typical sensitivity for InGaAs PD/TIAhybrid alone,typicalandminimumsensitivitiesof thedevicecalculatedwith10mVP-P thresholdPostAmplifier,andactualmeasuredvaluesforthesystemwithPostAmplifier.

orS=-21.5dBm.ThisPostAmplifierthresholdaffectsthesensitivityandthedifferenceis1.9dB.Thereforeitisveryimportanttotakeperformanceandparametersofalldiscretereceivercomponentsintoconsiderationtoanalyzethesensitivityoftheentirereceiversystem.

This application note helps to estimate optical front-end performanceand to compare receivers’ parameters. In the real systems, Jitter,Inter-symbolInterferenceandotherphenomenacanaffecttotalsystemperformance.

ActualBERmaybedifferent fromErrorProbability thatwedealtwith.WhenmeasuringactualBER,wehavetomakesure that largenumberofbitshasbeen transmittedbeforeobtaining the results. Sometimes,wereceive“errorenvelope”,which isa largenumberofbiterrorsforacertainshortintervalwithasmallamountoferrorsinpreviousandnextintervals. It happens due to EMI, power surges, etc. that affect totalsystem/equipmentperformanceandmeasurementsresult.

WecannotextrapolateSensitivityvs.BERcurvesusingthedataofTable 1forasystem(orconditions)withanonlineartransferfunction,suchasa limitingamplifier. WecancalculatethesensitivityofaTIA ina linearrange,andthenmodifytheresultsforthesystemwithalimitingamplifierforacertainBERbecause the thresholdofpostamplifier isa functionofBER.

86

APPLICATIONS•HighSpeedOpticalCommunications•Single/Multi-ModeFiberOpticReceiver•GigabitEthernet/FibreChannel•SONET/SDH,ATM•OpticalTaps

155Mbps/622Mbps/1.25Gbps/2.5GbpsHigh Speed InGaAs Photodiodes

FCI-InGaAs-XXX series with active area sizes of, 75µm, 120µm, 300µm,

400µmand500µm,exhibit thecharacteristicsneedforDatacomandTelecom

applications. Low capacitance, low dark current and high responsivity from

1100nm to1620nmmake thesedevices ideal for high-bit rate receivers used

in LAN, MAN, WAN, and other high speed communication systems. The

photodiodesarepackagedin3leadisolatedTO-46cansorwithARcoatedflat

windowsormicrolensestoenhancecouplingefficiency.FCI-InGaAs-XXXseries

isalsoofferedwithFC,SC,STandSMAreceptacles.

FEATURES•HighSpeed•HighResponsivity•LowNoise•SpectralRange900nmto1700nm

Electro-Optical Characteristics TA=23°C

PARAMETERS SYMBOL CONDITIONSFCI-InGaAs-75 FCI-InGaAs-120 FCI-InGaAs-300 FCI-InGaAs-400 FCI-InGaAs-500

UNITSMIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX

Active Area Diameter AAφ --- --- 75 --- --- 120 --- --- 300 --- --- 400 --- --- 500 --- µm

Responsivity(Flat Window Package) Rλ

λ=1310nm 0.80 0.90 --- 0.80 0.90 --- 0.80 0.90 --- 0.80 0.90 --- 0.80 0.90 ---A/W

λ=1550nm 0.90 0.95 --- 0.90 0.95 --- 0.90 0.95 --- 0.90 0.95 --- 0.90 0.95 ---

Capacitance Cj VR = 5.0V --- 1.5 --- --- 2.0 --- --- 10.0 --- --- 14.0 --- --- 20.0 --- pF

Dark Current Id VR = 5.0V --- 0.03 2 --- 0.05 2 --- 0.30 5 --- 0.40 5 --- 0.50 20 nA

Rise Time/Fall Time tr/tf

VR = 5.0V, RL=50Ω

10% to 90%--- --- 0.20 --- --- 0.30 --- --- 1.5 --- --- 3.0 --- --- 10.0 ns

Max. Reverse Voltage --- --- --- --- 20 --- --- 20 --- --- 15 --- --- 15 --- --- 15 V

Max. Reverse Current --- --- --- --- 1 --- --- 2 --- --- 2 --- --- 2 --- --- 2 mA

Max. Forward Current --- --- --- --- 5 --- --- 5 --- --- 8 --- --- 8 --- --- 8 mA

NEP --- --- --- 3.44E-15 --- --- 4.50E-

15 --- --- 6.28E-15 --- --- 7.69E-

15 --- --- 8.42E-15 --- W/√Hz

Absolute Maximum Ratings

PARAMETERS SYMBOL MIN MAX UNITS

Storage Temperature Tstg -55 +125 °C

Operating Temperature Top -40 +75 °C

Soldering Temperature Tsld --- +260 °C


Notes:•Allunitsininches(mm).•Alltolerances:0.005(0.125).•Pleasespecifywhenorderingtheflatwindoworlenscapdevices.•TheflatwindowdeviceshavebroadbandARcoatingscenteredat1310nm.•Thethicknessoftheflatwindow=0.008(0.21).

155Mbps/622Mbps/1.25Gbps/2.5GbpsHigh Speed InGaAs Photodiodes

88

APPLICATIONS•OpticalInstrumentation•PowerMeasurement•IRSensing•MedicalDevices

FCI-InGaAs-XXX-XLarge Active Area InGaAs Photodiodes

FCI-InGaAs-XXX-X series with active area sizes of 1mm, 1.5mm and 3mm,

arepartofOSIOptoelectronics’slargeactiveareaIRsensitivedetectorswhich

exhibitexcellentresponsivityfrom1100nmto1620nm,allowinghighsensitivity

toweak signals. These large active area devices are ideal for use in infrared

instrumentationandmonitoringapplications.Thephotodiodechipare isolated

in TO-46 or TO-5 packages with a broadband double sided AR coated flat

window.FCI-InGaAs-3000-Xcomewithdifferentshunt resistancevaluesof5,

10,20,and40MΩ.

FEATURES•HighResponsivity•LargeActiveAreaDiameter•LowNoise•SpectralRange900nmto1700nm







PARAMETERS SYMBOL CONDITIONSFCI-InGaAs-1000 FCI-InGaAs-1500 FCI-InGaAs-3000-X

UNITSMIN TYP MAX MIN TYP MAX MIN TYP MAX

Active Area Diameter AAφ --- --- 1.0 --- --- 1.5 --- --- 3.0 --- mm

Responsivity Rλ

λ=1310nm 0.80 0.90 --- 0.80 0.90 --- 0.80 0.90 ---A/W

λ=1550nm 0.90 0.95 --- 0.90 0.95 --- 0.90 0.95 ---

Capacitance Cj VR=0V --- 80 200 --- 200 450 --- 750 1800 pF

Shunt Resistance RSH VR=10mV 30 --- --- --- 20 --- --- 20 --- MΩ

Max. Reverse Voltage --- --- --- --- 5 --- --- 2 --- --- 2 V

Max. Reverse Current --- --- --- --- 1 --- --- 2 --- --- 2 mA

Max. Forward Current --- --- --- --- 10 --- --- 10 --- --- 10 mA

NEP --- --- --- 2.45E-14 --- --- 3.01E-14 --- --- 4.25E-14 --- W/√Hz


0.071 (1.80)

0.185 (4.70) 0.048 (1.22)

Notes:•Allunitsininches(mm).•Alltolerances:0.005(0.125)•TheflatwindowdeviceshavebroadbandARcoatingscenteredat1310nm•Thethicknessoftheflatwindow=0.008(0.21)

FCI-InGaAs-XXX-XLarge Active Area InGaAs Photodiodes

90

APPLICATIONS•PositionSensing•BeamAlignment•BeamProfiling

FCI-InGaAs-QXXXLarge Active Area InGaAs Quadrants

FCI-InGaAs-QXXXseriesarelargeactiveareaInGaAsphotodiodessegmented

into four separate active areas. These photodiodes come in 1mm and 3mm

activeareadiameter. The InGaAsQuadserieswithhigh responseuniformity

and the lowcross talkbetween theelementsare ideal for accuratenullingor

centering applications as well as beam profiling applications. They exhibit

excellent responsivity from 1100nm to 1620nm, and are stable over time

and temperature, and fast response times necessary for high speed or pulse

operation.ThephotodiodesarepackagedinisolatedTO-5orTO-8canswith

abroadbanddoublesidedARcoatedflatwindow,andalsocanbemountedon

ceramicsubstrateperrequest.

FEATURES•HighResponsivity•LowNoise•SpectralRange900nmto1700nm•LowCrosstalk•WideFieldofView






Electro-Optical Characteristics (per 1 element) TA=23°C

PARAMETERS SYMBOL CONDITIONSFCI-InGaAs-Q1000 FCI-InGaAs-Q3000

UNITSMIN TYP MAX MIN TYP MAX

Active Area Diameter AAφ --- --- 1000 --- --- 3000 --- µm

Responsivity Rλ

λ=1310nm 0.85 0.90 --- 0.85 0.90 ---A/W

λ=1550nm 0.90 0.95 --- 0.90 0.95 ---

Element Gap --- --- --- 0.045 --- --- 0.045 --- mm

Capacitance Cj VR = 5.0V --- --- 25 --- --- 225 pF

Dark Current Id VR = 5.0V --- 0.5 15 --- 2.0 100 nA


VR = 5.0V, 50Ω10% to 90% --- 3 --- --- 24 --- ns

Crosstalk --- λ=1550nm, VR = 5.0V --- --- 1 --- --- 1 %

Max. Reverse Voltage --- --- --- --- 15 --- --- 10 V

NEP --- λ=1550nm --- 1.20E-14 --- --- 2.50E-14 --- W/√Hz


Bottom View Bottom View

Notes:•Allunitsininches(mm).

FCI-InGaAs-QXXXLarge Active Area InGaAs Quadrants

92

APPLICATIONS•HighSpeedOpticalCommunications•Single/Multi-ModeFiberOpticReceiver•GigabitEthernet/FibreChannel•SONET/SDH,ATM•OpticalTaps

FCI-InGaAs-XXMHigh Speed InGaAs Arrays

FCI-InGaAs-XXM series with 4, 8, 12 and 16 channels are parts of OSI

Optoelectronics’s high speed IR sensitive photodetector arrays. Each AR

coatedelementiscapableof2.5Gbpsdataratesexhibitinghighresponsivity

from 1100nm to 1620nm. FCI-InGaAs-XXM, which comes standard on

a wraparound ceramic submount, is designed for multichannel fiber

applicationsbasedonstandard250mmpitchfiberribbon.Also,boardlevel

contactsof500mmmakeiteasytoconnecttoyourcircuit.

FEATURES•HighSpeed•HighResponsivity•LowNoise•SpectralRange900nmto1700nm

Electro-Optical Characteristics TA=23°C, VR=5V

PARAMETERS FCI-InGaAs-4M FCI-InGaAs-8M FCI-InGaAs-12M FCI-InGaAs-16M

Active Area Diameter 75µm, Pitch:250µm

Responsivity Typ. 0.95A/W @1550nm

Capacitance Typ. 0.65pF

Dark Current Typ. 0.03nA

Max. Reverse Voltage 20V

Max. Forward Current 5mA

Bandwidth Typ. 2.0GHz @ 1550nm

Breakdown Voltage Typ. 50V

Storage Temperature Range From –40 to 85°C

Operating Temperature Range From 0 to 70°C


Notes:•Allunitsinmillimeters.•Alldevicesaremountedwithlowoutgassing conductiveepoxywithtoleranceof±25µm.

FCI-InGaAs-XXMHigh Speed InGaAs Arrays

94

APPLICATIONS•HighSpeedOptical Communications•GigabitEthernet•FibreChannel•ATM•SONETOC-48/SDHSTM-16

1.25Gbps / 2.50Gbps HybridsInGaAs Photodetectors / Transimpedance Amplifiers

FCI-H125/250G-InGaAs-XX series are compact and integrated high speed

InGaAs photodetector with wide dynamic range transimpedance amplifier.

CombiningthedetectorwiththeTIAinahermeticallysealed4pinTO-46package

provides ideal conditions for high speed signal amplification.High speedand

superiorsensitivitymakethesedevicesidealforhigh-bitratereceiversusedin

LAN,MAN,WAN,andotherhighspeedcommunicationsystems.TOpackages

come standard with a lensed cap to enhance coupling efficiency, or with a

broadbanddoublesidedARcoatedflatwindow.TheFCI-H125/250G-InGaAs-

XXseriesarealsoofferedwithFC,SC,STandSMAreceptacles.

FEATURES•InGaAsPhotodetector/LowNoiseTransimpedanceAmplifier•HighBandwidth/WideDynamicRange•HermeticallySealedTO-46Can•Single+3.3to+5VPowerSupply•SpectralRange1100nmto1650nm•DifferentialOutput

Electro-Optical Characteristics TA=23°C, Vcc=+3.3V, 1310nm, 100Ω Differential AC Load

PARAMETERS SYMBOL CONDITIONSFCI-H125G-InGaAs-75 FCI-H250G-InGaAs-75


Supply Voltage VCC --- +3 --- +5.5 +3 --- +5.5 V

Supply Current ICC*TA = 0 to

70°C --- 26 *55 --- 35 *65 mA


Operating Wavelength λ --- 1100 --- 1650 1100 --- 1650 nm

Responsivity Rλ-17dBm,

Differential 1800 2500 --- 1600 2500 --- V/W

Transimpedance --- -17dBm, Differential --- 2800 --- --- 2800 --- Ω

Sensitivity S BER 10-10, PRBS27-1 -24 -28 --- -20 -24 --- dBm

Optical Overload --- --- -3 --- --- 0 --- --- dBm

Bandwidth BW -3dB, Small Signal --- 900 --- --- 1750 --- MHz

Low Frequency Cutoff --- -3dB --- 45 --- --- 30 --- kHz

Differential Output Voltage VOUT, P-P -3dBm 180 250 420 200 400 600 mV P-P

Output Impedance --- --- 47 50 53 47 50 53 Ω

Transimpedance Linear Range --- <5% 30 --- --- 40 --- --- µW P-P





Supply Voltage Vcc 0 +5.5 V

Input Optical Power PIN --- +3 dBm

UseACcouplinganddifferential100Ω loadforbesthigh-speedperformance.DevicesarenotintendedtodriveDCcoupled,50Ω groundedload.


1.25Gbps / 2.50Gbps HybridsInGaAs Photodetectors / Transimpedance Amplifiers

Notes:•Allunitsininches(mm).•Alltolerances:0.005(0.125).•Pleasespecifywhenorderingtheflatwindoworlenscapdevices.•TheflatwindowdeviceshavebroadbandAR coatingscenteredat1310nm.•Thethicknessoftheflatwindow=0.008(0.21).

50mV/div,160ps/div,-6dBm,1310nm,PRBS27-1,Diff. 80mV/div,80ps/div,-6dBm,1310nm,PRBS27-1,Diff.


FCI-H125G-InGaAs-75 FCI-H250G-InGaAs-75

96

APPLICATIONS•HighSpeedOpticalCommunications•ATM•SONETOC-3/OC-12•SDHSTM-1/STM-4•OpticalReceivers

622 Mbps HybridsInGaAs Photodetectors / Transimpedance Amplifiers

FCI-H622M-InGaAs-75 series are high-speed 75µm InGaAs photodetector

integratedwithwide dynamic range transimpedance amplifier.Combining the

detectorwiththeTIAinahermeticallysealed4pinTO-46packageprovidesideal

conditionsforhigh-speedsignaldetectionandamplification.Lowcapacitance,

low dark current and high responsivity of the detector, along with low noise

characteristicoftheintegratedTIA,giverisetoexcellentsensitivity.Inpractice,

these devices are ideal for datacom and telecom applications. Cost effective

TO-46 packages come standard with a lensed cap for design simplification,

or with a broadband double-sided AR coated flat window. The FCI-H622M-

InGaAs-75seriesarealsoofferedwithFC,SC,STandSMAreceptacles.

FEATURES•LowNoiseTransimpedanceAmplifier•HighBandwidth/WideDynamicRange•Single+3.3VPowerSupply•SpectralRange1100nmto1650nm•DifferentialOutput

UseACcouplinganddifferential150Ωloadforthebesthigh-speedperformance.DevicesarenotdesignedtodriveDCcoupled150Ωgroundedload.

Electro-Optical Characteristics T=23°C, Vcc=+3.3V, 1310nm, 150Ω Differential AC at 622Mbps

PARAMETERS SYMBOL CONDITIONSFCI-H622M-InGaAs-75

UNITSMIN TYP MAX

Supply Voltage VCC --- +3 --- +3.6 V

Supply Current ICC *TA = 0 to 70°C --- 22 27 mA

Active Area Diameter AAφ --- --- 75 --- µm

Operating Wavelength λ --- 1100 --- 1650 nm

Responsivity Rλ*-37dBm, ⋅⋅-28dBm

Differential--- ⋅⋅16 --- V/mW

Transimpedance --- *-37dBm, ⋅⋅-28dBm Differential

--- ⋅⋅18 --- kΩ

Sensitivity S BER 10-9, PRBS27-1with noise filter --- -32 --- dBm

Optical Overload --- --- --- 0 --- dBm

Bandwidth BW -3dB, Small Signal --- 520 --- MHz

Differential Output Voltage VOUT, P-P 0dBm --- 240 --- mV P-P

Output Impedance --- Single-ended --- 75 --- Ω





Supply Voltage Vcc 0 +5.5 V



Notes:•Allunitsininches(mm).•Alltolerances:0.005(0.125).•Pleasespecifywhenorderingtheflatwindoworlenscapdevices.•TheflatwindowdeviceshaveadoublesidedARcoatedwindowat1310nm.•Thethicknessoftheflatwindow=0.008(0.21).

622 Mbps HybridsInGaAs Photodetectors / Transimpedance Amplifiers

98

APPLICATIONS•HighSpeedOpticalCommunications•MultichannelFiberOpticReceiver•PowerMonitoring•Single/Multi-ModeFiberOpticReceiver•FastEthernet,SONET/SDHOC-3/STM-1,ATM•InstrumentationandAnalogReceivers

FCI-InGaAs-300B1XXBack Illuminated InGaAs Photodiode / Arrays

FCI-InGaAs-300B1XX series are multifunctional backside illuminated

photodiode/arrays. They come standard in a single element diode or 4- or

8- elements arraywith active area of 300um. These back illuminated InGaAs

photodiode/arraysaredesignedtobeflipchipmountedtoanopticalplanefor

frontorbackillumination.Theycanbetraditionallymounted(activeareafacing

up), or assembled face downminimizing the overall dimensions. These low

inductance,lowdarkcurrent,andlowcapacitancebackilluminatedphotodiode/

arrayscomewithorwithoutceramicsubstrates.

FEATURES•BackIllumination•HighResponsivityonBothFrontandBack•LowNoise•SpectralRange900nmto1700nm


PARAMETERS FCI-InGaAs-300B1 FCI-InGaAs-300B1X4 FCI-InGaAs-300B1X8

Active Area Diameter 300µm 300µm, Pitch:500µm 300µm, Pitch:500µm

Responsivity Min. 0.85A/W @ 1550nm for both front and back Min. 0.80A/W @ 1310nm for both front and back

Capacitance Typ. 8pF, Max. 10pF @ VR=-5V

Dark Current Typ. 0.05nA, Max. 5.0nA @ VR=-5V


Max. Reverse Current 5mA


Bandwidth Min. 100MHz

Breakdown Voltage Min. 10V @ 1uA




Front View

AnodeWirebondable/Solderable

0.300 Diameter

0.330 Diameter

0.330 Diameter

CathodeWirebondable/Solderable


0.300 Diameter



0.300 Diameter

0.330 Diameter


Side View Back View

0.2000.015

0.5000.015

0.500Typ. Pitch

0.500Typ. Pitch

4.0000.015

2.0000.015

0.500Typ.

0.500Typ.

0.7250.015

0.7250.015

0.7250.015

0.297

0.310

FCI-InGaAs-300B1XXBack Illuminated InGaAs Photodiode / Arrays

100

APPLICATIONS•WavelengthLocker/WavelengthMonitoring•LasersBackFacetMonitoring•DWDM•Instrumentation

FCI-InGaAs-WCER-LRBroadband Anti-Reflection Coated InGaAs Photodiodes

OSI Optoelectronics's latest product line includes a very low reflectance

photodiode. Designed for telecommunication applications, the InGaAs/InP

photodiodehasa typicaloptical reflectanceof less than .6%from1520nmto

1620nm.Thisultralowreflectanceoverthewidewavelengthrangewasachieved

bydepositingaproprietarymulti-layeredAnti-Reflectioncoatingdirectlyontothe

surfaceoftheInGaAs/InPphotodiode.

FEATURES•ReflectanceLessthan0.6%•LowNoise•HighResponsivity•HighSpeed•SpectralRange900nmto1700nm

Notes:•Allunitsinmillimeters.•Alldevicesaremountedwithlowoutgassingconductiveepoxywithtoleranceof±25µm.Eutecticmountingisalsoavailableuponrequest.




Operating Temperature Top 0 +70 °C



PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS

Active Area AA --- --- 250X500 --- µm X µm

Responsivity Rλ

λ = 1310nm 0.85 0.90 ---A/W

λ = 1550nm 0.90 0.95 ---

Capacitance Cj VR=5.0V --- 15 --- pF

Dark Current Id VR=5.0V --- --- 1 nA

Max. Reverse Voltage --- --- --- --- 20 V

Max. Reverse Current --- --- --- --- 2 mA

Max. Forward Current --- --- --- --- 5 mA

Reflectance --- 1520nm≤ λ ≤1620nm --- 0.5 0.6 %

Reflectance Curve


0.024

0.011

0.260

0.250±0.015

0.450±0.015

0.025±0.010 TYP

0.100

0.070

0.0040.003

ø0.0790.070

ø0.049ø0.036 ACTIVE AREA

0.008

ø0.080CATHODE

ø0.080ANODE

25

36 APPLICATIONS•HighSpeedOpticalCommunications•OC-192•OpticalNetworking•OpticalMeasurement

FCI-InGaAs-36C10Gbps InGaAs Photodiode

OSI Optoelectronics's FCI-InGaAs-36C is an OC-192 (SONET/SDH) capable

photosensitive device, exhibiting low dark current and good performance

stability.

BothAnodeandCathodecontactsappearonthechip’stopfacet.Anditmakes

idealcomponent inhigh-speedopticaldata transportapplicationsat10Gbps,

respondingtoaspectralenvelopthatspansfrom910nmto1650nm.

FEATURES•HighSpeed,10GbpsDataRates•lowDarkCurrent•FrontIlluminated•HighResponsivity,Typ.0.8A/W @1550nm•DiameterofLightSensitivearea36µm•LowCapacitance

Typical Eye Diagram (10Gbps)(1)

Scale: Vertical100mV/div Horizontal20.0ps/div



Sensing Area Diameter AAφ --- --- 36 --- µm

Chip Size --- --- --- 450 x 250 --- µm x µm

Responsivity Rλ

λ=1310nm 0.8 0.85 ---A/W

λ=1550nm 0.75 0.8 ---

Capacitance Cj VR=5V --- 0.16 0.2 pF

Dark Current Id VR=5V --- 0.5 2 nA

Breakdown Voltage Vb IR=1µA 20 --- --- V

Bandwidth --- --- --- 9 --- GHz

(1)MeasuredwithaTIA.CurrentlyFCI-InGaAs-36Cisofferedindieformonly.

102

APPLICATIONS•HighSpeedOpticalCommunications•GigabitEthernet/FibreChannel•SONET/SDH,ATM•OpticalPowerMonitoring/Instrumentation

FCI-InGaAs-XX-XX-XXHigh Speed InGaAs Photodiodes w/Pigtail Packages

The FCI-InGaAs-XX-XX-XX with active area of 75um and 120um are part of

OSI Optoelectronics’s family of high speed IR sensitive detectors with fiber

pigtail package. The single/multi-mode fiber is optically aligned to either the

hermetically sealed InGaAs diode in TO-46 lens cap package enhancing the

couplingefficiencyandstabilityordirectly to the InGaAsdiodemountedona

ceramicsubstrate.Highresponsivityandlowcapacitancemakethesedevices

ideal for very high-bit rate receivers used in LAN,MAN,WANandother high

speedcommunicationandmonitoring/instrumentationsystems.Anglepolished

connectorsandcustompackagesarealsoavailable.

For a solution involving FC connector and TO-46 attachment, user(s) may

consider either FCI-InGaAs-75-SM-FC or FCI-InGaAs-120-SM-FC in single-

modeoperation.

Similarily, the multi-mode variant is available in FCI-InGaAs-120-MM-FC

using62.5/125fiber.Theback-reflectionof-30dBtypicalistobeexperiencedin

multi-modebasedsolution.

FEATURES•HighSpeed•HighResponsivity•SpectralRange 900nmto1700nm•LowBackReflection






PARAMETERS SYMBOL CONDITIONSFCI-InGaAs-75-XX-XX FCI-InGaAs-120-XX-XX FCI-InGaAs-75C-XX-XX FCI-InGaAs-120C-XX-XX

UNITSMIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX

Active Area Diameter AAφ --- --- 75 --- --- 120 --- --- 75 --- --- 120 --- µm

Responsivity Rλ

λ=1310nm 0.75 0.85 --- 0.80 0.90 --- 0.75 0.85 --- 0.80 0.90 ---A/W

λ=1550nm 0.80 0.90 --- 0.85 0.95 --- 0.80 0.90 --- 0.85 0.95 ---

Back-Reflection* RL --- --- -40 -35 --- -40 -35 --- -40 -35 --- -40 -35 dB

Capacitance Cj VR = 5.0V --- 0.65 --- --- 1.0 --- --- 0.65 --- --- 1.0 --- pF

Dark Current Id VR = 5.0V --- 0.03 2 --- 0.05 2 --- 0.03 2 --- 0.05 2 nA


VR = 5.0V, RL=50Ω10% to 90% --- --- 0.2 --- --- 0.3 --- --- 0.2 --- --- 0.3 ns

Max. Reverse Voltage --- --- --- --- 20 --- --- 20 --- --- 20 --- --- 20 V

Max. Reverse Current --- --- --- --- 1 --- --- 2 --- --- 1 --- --- 2 mA

Max. Forward Current --- --- --- --- 5 --- --- 5 --- --- 5 --- --- 5 mA

NEP --- --- --- 3.44E-15 --- --- 4.50E-15 --- --- 3.44E-15 --- --- 4.50E-15 --- W/√Hz

*SingleModeFiber(SMF)only


Notes:•Allunitsinmillimeters(inches).•Alltolerancesare0.125(0.005)

5.08 (0.200)

7.21 (0.284)

0.46(0.018)

FCI-InGaAs-75C-XX-XX and FCI-InGaAs-120C-XX-XX

FCI-InGaAs-75-XX-XX and FCI-InGaAs-120-XX-XX

FCI-InGaAs-XX-XX-XXHigh Speed InGaAs Photodiodes w/Pigtail Packages

104

APPLICATIONS•HighSpeedOpticalCommunications•GigabitEthernet/FibreChannel•SONET/SDH,ATM•DiodeLaserMonitor•Instrumentation

FCI-InGaAs-XXX-WCERHigh Speed InGaAs Photodiodes Mounted on Wraparound Ceramic

FCI-InGaAs-XXX-WCERwithactiveareasizesof75µm,120µm,300µm,400µm

and 500µm are part of a line ofmonitor photodiodesmounted onmetallized

ceramic substrates. These compact assemblies are designed for ease of

integration. The chips can be epoxy or eutectic mounted onto the ceramic

substrate.

FEATURES•LowNoise•HighResponsivity•HighSpeed•SpectralRange900nmto1700nm

Notes:•Allunitsinmillimeters(inches).•Alldevicesareeutecticmountedwithtoleranceof±50µm.







PARAMETERS SYMBOL CONDITIONSFCI-InGaAs-75WCER FCI-InGaAs-120WCER FCI-InGaAs-300WCER FCI-InGaAs-400WCER FCI-InGaAs-500WCER



Responsivity Rλ

λ=1310nm 0.80 0.90 --- 0.80 0.90 --- 0.80 0.90 --- 0.80 0.90 --- 0.80 0.90 ---A/W

λ=1550nm 0.90 0.95 --- 0.90 0.95 --- 0.90 0.95 --- 0.90 0.95 --- 0.90 0.95 ---




VR = 5.0V, RL=50Ω

10% to 90%--- --- 0.20 --- --- 0.30 --- --- 1.5 --- --- 3.0 --- --- 10.0 ns




NEP --- --- --- 3.44E-15 --- --- 4.50E-

15 --- --- 6.28E-15 --- --- 7.69E-

15 --- --- 8.42E-15 --- W/√Hz


APPLICATIONS•HighSpeedOpticalCommunications•GigabitEthernet/FibreChannel•SONET/SDH,ATM•DiodeLaserMonitor•Instrumentation

FCI-InGaAs-XXX-ACERHigh Speed InGaAs Photodiodes Mounted on Wedge Ceramic Packages

FCI-InGaAs-XXX-ACERwithactiveareasizesof75µm,120µm,300µm,400µm

and500µmispartofOSIOptoelectronics’shighspeedIRsensitivephotodiodes

mountedonangledceramicsubstrates.Theceramicsubstratewithanangled

surface by 5° greatly reduces the back reflection. The chips can be epoxy/

eutecticmountedontotheangledceramicsubstrate.

FEATURES•5°AngleCeramic•LowNoise•HighResponsivity•HighSpeed•SpectralRange900nmto1700nm

Notes:•Allunitsinmillimeters(inches).•Alldevicesareeutecticmountedwithtoleranceof±50µm.







PARAMETERS SYMBOL CONDITIONSFCI-InGaAs-75ACER FCI-InGaAs-120ACER FCI-InGaAs-300ACER FCI-InGaAs-400ACER FCI-InGaAs-500ACER


Active Area Diameter AAφ --- --- 75 --- --- 120 --- --- 300 --- --- 400 --- --- 500 ---

µm

Responsivity Rλ

λ=1310nm 0.80 0.90 --- 0.80 0.90 --- 0.80 0.90 --- 0.80 0.90 --- 0.80 0.90 ---

λ=1550nm 0.90 0.95 --- 0.90 0.95 --- 0.90 0.95 --- 0.90 0.95 --- 0.90 0.95 --- A/W




VR = 5.0V, RL=50Ω

10% to 90%--- --- 0.20 --- --- 0.30 --- --- 1.5 --- --- 3.0 --- --- 10.0 ns




NEP --- --- --- 3.44E-15 --- --- 4.50E-

15 --- --- 6.28E-15 --- --- 7.69E-

15 --- --- 8.42E-15 --- W/√Hz

106

APPLICATIONS•HighSpeedOpticalCommunications•GigabitEthernet/FibreChannel•SONET/SDH,ATM•DiodeLaserMonitoring•Instrumentation

FCI-InGaAs-XXX-LCERHigh Speed InGaAs Photodiodes Mounted on Ceramic Packages w/Leads

FCI-InGaAs-XXX-LCER with active area sizes of 75µm, 120µm, 300µm,

400µmand500µmarepartofOSIOptoelectronics’shighspeedIRsensitive

photodiodesmountedongullwingceramicsubstrates.Thechipscanbe

epoxy/eutecticmountedontotheceramicsubstrate.


Notes:•Allunitsinmillimeters.•Alldevicesaremountedwithlowoutgassing conductiveepoxywithtoleranceof±25µm.Eutecticmountingisalsoavailableuponrequest.







PARAMETERS SYMBOL CONDITIONSFCI-InGaAs-75LCER FCI-InGaAs-120LCER FCI-InGaAs-300LCER FCI-InGaAs-400LCER FCI-InGaAs-500LCER



Responsivity Rλ

λ=1310nm 0.80 0.90 --- 0.80 0.90 --- 0.80 0.90 --- 0.80 0.90 --- 0.80 0.90 ---A/W

λ=1550nm 0.90 0.95 --- 0.90 0.95 --- 0.90 0.95 --- 0.90 0.95 --- 0.90 0.95 ---




VR = 5.0V, RL=50Ω

10% to 90%--- --- 0.20 --- --- 0.30 --- --- 1.5 --- --- 3.0 --- --- 10.0 ns

Max. ReverseVoltage --- --- --- --- 20 --- --- 20 --- --- 15 --- --- 15 --- --- 15 V



NEP --- --- --- 3.44E-15 --- --- 4.50E-

15 --- --- 6.28E-15 --- --- 7.69E-

15 --- --- 8.42E-15 --- W/√Hz


APPLICATIONS•HighSpeedOpticalCommunications•GigabitEthernet/FibreChannel•SONET/SDH,ATM•DiodeLaserMonitoring•Instrumentation

FCI-InGaAs-XXX-CCERHigh Speed InGaAs Photodiodes Mounted on Cavity Ceramic Packages

FCI-InGaAs-XXX-CCER with active area sizes of 75µm, 120µm, 300µm,

400µm and 500µm are part of OSI Optoelectronics’s high speed IR sensitive

photodiodes mounted on gull wing ceramic substrates with glass windows.

Thesedeviceshaveaglasswindowattachedtotheceramicwherefiberscan

bedirectlyepoxymountedonto.Thechipscanbeepoxyoreutecticmounted

onto the ceramic substrate. These devices can be providedwith custom AR

coatedwindows.


Notes:•Allunitsinmillimeters.•Alldevicesaremountedwithlowoutgassing conductiveepoxywithtoleranceof±25µm.Eutecticmountingisalsoavailableuponrequest.







PARAMETERS SYMBOL CONDITIONSFCI-InGaAs-75CCER FCI-InGaAs-120CCER FCI-InGaAs-300CCER FCI-InGaAs-400CCER FCI-InGaAs-500CCER



Responsivity Rλ

λ=1310nm 0.80 0.90 --- 0.80 0.90 --- 0.80 0.90 --- 0.80 0.90 --- 0.80 0.90 ---A/W

λ=1550nm 0.90 0.95 --- 0.90 0.95 --- 0.90 0.95 --- 0.90 0.95 --- 0.90 0.95 ---




VR = 5.0V, RL=50Ω

10% to 90%--- --- 0.20 --- --- 0.30 --- --- 1.5 --- --- 3.0 --- --- 10.0 ns




NEP --- --- --- 3.44E-15 --- --- 4.50E-

15 --- --- 6.28E-15 --- --- 7.69E-

15 --- --- 8.42E-15 --- W/√Hz

108

APPLICATIONS•OpticalCommunications•PowerMeasurement•IRSensing•MedicalDevices•OpticalTaps

FCI-XXXALarge Active Area 970nm Si Monitor Photodiodes

FCI-020AandFCI-040Awithactiveareasizesof0.5mmand1.0mm,arepartsof

OSIOptoelectronics’slargeactiveareaIRsensitiveSilicondetectorsexhibiting

excellent responsivity at 970nm.These large active areadevices are ideal for

use in low speed infrared instrumentation and monitoring applications. The

photodiodechipisisolatedinaTO-18package.

FEATURES•HighResponsivity@970nm•LargeActiveAreaDiameter•SpectralRange400nmto1100nm•WideDynamicRange







PARAMETERS SYMBOL CONDITIONSFCI-020A FCI-040A


Active Area Diameter AAφ --- --- 0.51 --- --- 1.02 --- mm

Responsivity Rλ

λ=400nm 0.07 0.12 --- 0.07 0.12 ---

A/Wλ=632nm 0.33 0.40 --- 0.33 0.40 ---

λ=970nm 0.60 0.65 --- 0.60 0.65 ---

Capacitance Cj

VR =0V --- 4 --- --- 8 ---pF

VR =10V --- 1 --- --- 2 ---

Dark Current Id VR =10V --- 0.01 0.15 --- 0.05 0.50 nA

Reverse Voltage --- --- --- --- 30 --- --- 30 V

Rise Time trVR =10V, λ=632nm

10% to 90%, RL=50Ω--- 26 --- --- 24 --- ns

NEP --- --- --- 2.80E-15 --- --- 6.20E

-15 --- W/√Hz


Res

po

nsi

vity

FCI-XXXALarge Active Area 970nm Si Monitor Photodiodes

Notes:•Allunitsininches(mm).•TheflatwindowdeviceshavebroadbandAR coatingscenteredat850nm.

110

APPLICATIONS•HighSpeedOpticalCommunications•Single/Multi-ModeFiberOpticReceiver•FastEthernet/FDDI•SONET/SDH,ATM

100Mbps / 155Mbps / 622MbpsLarge Active Area and High Speed Silicon Photodiodes

OSIOptoelectronics’sfamilyoflargeactiveareaandhighspeedsilicondetector

series are designed to reliably support short-haul data communications

applications.Allexhibitlowdarkcurrentandlowcapacitanceat3.3Vbias.The

baseunitcomesina3pinTO-46packagewithmicrolenscaporARcoatedflat

window. Standard fiber optic receptacles (FC, ST, SC and SMA) allow easy

integrationofOSIOptoelectronics’sfastsiliconphotodiodesintosystems.

FEATURES•SiliconPhotodiodes•HighResponsivity•LargeSensingArea•[email protected]•LowCost


PARAMETERS SYMBOL CONDITIONSFCI-HR005 FCI-HR008 FCI-HR020 FCI-HR026 FCI-HR040

UNITSMIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAXActive Area Diameter AAφ --- --- 127 --- --- 203 --- --- 508 --- --- 660 --- --- 991 --- µm

Responsivity(Flat Window Package) Rλ λ=850nm --- 0.50 --- --- 0.50 --- --- 0.50 --- --- 0.50 --- --- 0.50 --- A/W

Dark Current Id VR = 5.0V --- 0.02 0.80 --- 0.03 0.80 --- 0.06 1.00 --- 0.09 1.50 --- 0.30 2.00 nA

Capacitance Cj

VR = 3.3V --- 0.9 --- --- 0.9 --- --- 2.1 --- --- 2.8 --- --- 5.2 ---pF

VR = 5.0V --- 0.80 --- --- 0.80 --- --- 1.8 --- --- 2.6 --- --- 4.9 ---

Rise Time tr

10% to 90%

RL=50Ω λ=850nm

VR = 3.3V --- 0.75 --- --- 0.75 --- --- 1.00 --- --- 1.10 --- --- 1.20 ---

nsVR = 5.0V --- 0.60 --- --- 0.60 --- --- 0.80 --- --- 0.90 --- --- 1.00 ---


NEP --- --- --- 5.95E-15 --- --- 6.19E

-15 --- --- 8.76E-15 --- --- 1.07E

-14 --- --- 1.96E-14 --- W/√Hz







HR-040 HR-026 HR-020 HR-008 & HR-005

HR-005 HR-008 HR-020 HR-026 HR-040

Notes:•Allunitsininches(mm).•Alltolerances:0.005(0.125).•Pleasespecifywhenorderingtheflatwindoworlencapdevices.•TheflatwindowdeviceshavebroadbandARcoatingscenteredat850nm.•Thethicknessoftheflatwindow=0.008(0.21).

100Mbps / 155Mbps / 622MbpsLarge Active Area and High Speed Silicon Photodiodes

112

APPLICATIONS•HighSpeedOpticalCommunications•Single/Multi-ModeFiberOpticReceiver•GigabitEthernet/FibreChannel

•SONET/SDH,ATM

850nm, 1.25GbpsLarge Active Area and High Speed Silicon Photodiodes

OSI Optoelectronics’s family of large active area and high speed silicon PIN

photodiodes possesses a large sensing area optimized for short-haul optical

data communication applications at 850nm. The photodetectors exhibit high

responsivity, wide bandwidth, low dark current and low capacitance at 3.3V.

Theyaredesigned tomatch themostwidelyused transimpedanceamplifiers.

The photodiodes can be used in all 850nm transceivers and GBICs up to

1.25GbpsapplicationssuchasGigabitEthernetandFibreChannel.Thechipis

isolatedina3pinTO-46packagewithoptionsofmicrolenscaporanARcoated

flatwindow.TheyarealsoavailableinstandardfiberreceptaclessuchasFC,ST,

SCandSMA.Foravailabilityinchipformpleasecontactoursalesdepartment.

FEATURES•SiliconPhotodiodes•HighResponsivity•LargeSensingArea•[email protected]•LowCost


PARAMETERS SYMBOL CONDITIONSFCI-125G-006HRL FCI-125G-010HRL FCI-125G-012HRL FCI-125G-016HRL

UNITSMIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAXActive Area Diameter AAφ --- --- 150 --- --- 250 --- --- 300 --- --- 400 --- µm

Responsivity(Flat Window Package)

Rλ λ=850nm --- 0.36 --- --- 0.36 --- --- 0.36 --- --- 0.36 --- A/W

Dark Current Id

VR = 3.3V --- 20 500 --- 25 500 --- 30 500 --- 40 500pA

VR = 5.0V --- 30 500 --- 35 500 --- 40 500 --- 50 500

Capacitance Cj

VR = 3.3V --- 0.66 --- --- 0.96 --- --- 1.16 --- --- 1.73 ---pF

VR = 5.0V --- 0.65 --- --- 0.94 --- --- 1.13 --- --- 1.70 ---

Rise Time tr

20% to 80%

RL=50Ωλ=850nm

VR = 3.3V --- 38 --- --- 50 --- --- 69 --- --- 100 ---

psVR = 5.0V --- 35 --- --- 47 --- --- 60 --- --- 84 ---

Fall Time tf

80% to 20%

RL=50Ωλ=850nm

VR = 3.3V --- 313 --- --- 429 --- --- 436 --- --- 449 ---

psVR = 5.0V --- 200 --- ---- 246 --- --- 265 --- --- 329 ---

Max. Reverse Voltage --- --- --- --- 20 --- --- 20 --- --- 20 --- --- 20 V

NEP --- --- --- 8.60E-15 --- --- 9.29E

-15 --- --- 9.93E-15 --- --- 1.11E

-14 --- W/√Hz







Notes:•Allunitsininches(mm).•Alltolerances:0.005(0.125).•Pleasespecifywhenorderingtheflatwindoworlenscapdevices.•TheflatwindowdeviceshavebroadbandAR coatingscenteredat850nm.

850nm, 1.25GbpsLarge Active Area and High Speed Silicon Photodiodes

114

APPLICATIONS•HighSpeedOpticalCommunications•GigabitEthernet•FibreChannel

FCI-H125G-0101.25Gbps Silicon Photodetector / Transimpedance Amplifier

FCI-H125G-010 is a low noise, high bandwidth photodetector plus transimpedance

amplifier designed for short wavelength (850nm) high speed fiber optic data

communications. The hybrid incorporates a 250µmdiameter large sensing area, high

sensitivitysiliconphotodetector. It also includesahighgain transimpedanceamplifier

producing a differential output voltage for latching to post amplifiers used in electro-

optical receiversand transceivers forGigabitEthernetandFibreChannelapplications

up to 1.25Gbps over multi-mode fiber. The photodetector converts the light into an

electricalsignalwhiletheoutputvoltageincreaseswithlightinput.Thisisachievedby

asingle+3.3Vto+5Vpositivepowersupply.Thesedevicesareavailablein4pinTO-46

metalpackageswitheitheradoublesidedARcoatedwindowcaporanintegratedlens

cap. The250µmdiametersensingareaeases fiberalignment forconnectorizationor

receptacle attachment. Furthermore, theproximity of the transimpedance amplifier to

thephotodetectorlowersthecapacitanceassociatedwithlongtraces,thereforeallowing

higherbandwidthandsensitivity.

FEATURES•SiliconPhotodetector/LowNoiseTransimpedanceAmplifier•LowCost•LargeActiveAreaof250µm•HighBandwidth/WideDynamicRange•AutomaticGainControl(AGC)•HermeticallySealedTO-46Can•Single+3.3Vto+5VPowerSupply•DifferentialOutput

UseACcouplinganddifferential100Ωloadforthebesthigh-speedperformance.DevicesarenotintendedtodriveDCcoupled,50Ω groundedload.





Supply Voltage Vcc 0 +6 V




Supply Voltage VCC --- +3 --- +5.5 V

Supply Current ICC --- --- 38 50 mA

Active Area Diameter AAφ --- --- 250 --- µm

Operating Wavelength λ --- --- 850 --- nm

Responsivity Rλ -19dBm, Differential --- 3000 --- V/W

Transimpedance --- -19dBm, Differential --- 8300 --- Ω

Sensitivity S BER 10-10, PRBS27-1 -20 -23 --- dBm

Optical Overload --- --- -3 0 --- dBm

Bandwidth BW -3dB, Small Signal 800 1000 --- MHz

Differential Output Voltage VOUT, P-P --- --- 200 --- mVp-p

Output Impedance --- --- 40 50 62 Ω


Notes:•Allunitsininches(mm).•Alltolerances:0.005(0.125).•Pleasespecifywhenorderingtheflatwindoworlenscapdevices.•TheflatwindowdeviceshavebroadbandAR coatingscenteredat850nm.•Thethicknessoftheflatwindow=0.008(0.21).

20mV/div,160ps/div,-17dBm,850nm,PRBS27-1,Diff.40mV/div,160ps/div,-12dBm,850nm,PRBS27-1,Diff.

FCI-H125G-0101.25Gbps Silicon Photodetector / Transimpedance Amplifier

116

BPX65-100Fiberoptic Receiver

The BPX65-100 receiver contains a BPX-65 ultra high speed photodiode coupled to an NE5212 (Signetics) transimpedance amplifier. Standard products include ST aned SMA connector versions.

0.100 (2.54) Pin Circle Diameter2

5

6

3

1

4

0.018 (0.46)

0.210 (5.33)

0.030 (0.76)

PIN 3

PIN 1

4.0 V

3.0 V

3.5 V (QUIESCENT)

OUTPUT WAVEFORMS (NOMINAL VALUES)

Pin Designations1 - D out2 - Cathode3 - D out4 - Ground5 - Anode6 - Vcc (5 V)

0.156 (3.96)

0.183 (4.65) Cap Diameter0.153 (3.89) Window Diameter

0.50 (12.70)

0.21 (5.33)D out

D out


5

6

3

1

4

0.018 (0.46)

0.210 (5.33)

0.030 (0.76)

PIN 3

PIN 1

4.0 V

3.0 V

3.5 V (QUIESCENT)



0.156 (3.96)


0.50 (12.70)

0.21 (5.33)D out

D out 0.100 (2.54) Pin Circle Diameter

2

5

6

3

1

4

0.018 (0.46)

0.210 (5.33)

0.030 (0.76)

PIN 3

PIN 1

4.0 V

3.0 V

3.5 V (QUIESCENT)



0.156 (3.96)


0.50 (12.70)

0.21 (5.33)D out

D out


5

6

3

1

4

0.018 (0.46)

0.210 (5.33)

0.030 (0.76)

PIN 3

PIN 1

4.0 V

3.0 V

3.5 V (QUIESCENT)



0.156 (3.96)


0.50 (12.70)

0.21 (5.33)D out

D out Absolute Maximum Ratings

MAX UNITS

Maximum Voltage 6 V

Operating Temp. Range -20 to +70 °C

Receiver Data at 25°C

MODEL NUMBER FIBER CONNECTOR POWER SUPPLY

DETECTORRESPONSIVITY

λ=850nmAMPLIFIER GAIN MAX DATA RATE

BPX65-100 None

5V 0.5 A/W 14 KΩ 100 MbpsBPX65-100ST ST

BPX65-100SMA SMA

APPLICATIONS•100MbsOpticalCommunications•FiberPatchcordCoupling•Silicon-basedOpticalReceivers

FEATURES•140MHzBandwidth•14KΩDifferentialTransresistance•400nmto1000nmSpectralRange•2.5

TransimpedanceAmplifier pA √Hz


FCI-GaAs-XXMHigh Speed GaAs Arrays

The FCI-GaAs-XXM is a 4 or 12 element GaAs PIN photodetector array

designed forhighspeed fiber receiverandmonitoringapplications.The70µm

diameterelementsarecapableof2.5Gbpsdatarates.ARcoatedandsensitive

to telecommunication wavelengths, this array is a perfect receiver for SM or

MMfiberribbonwitha250µmpitch.TheFCI-GaAs-XXMcomesstandardona

wraparoundceramicsubmount.Boardlevelcontactshavea0.5mmpitch.

If you need a custom array or require special testing for your

OSI Optoelectronics part, please contact our Applications department.

APPLICATIONS•FiberOpticReceiver•DWDMMonitor•SMorMMFiberRibbon•ParallelInterconnects

FEATURES•HighSpeed•HighResponsivity•ARCoatedElements•WraparoundCeramicSubmount•SpectralRange650nmto860nm

Notes:•Allunitsinmillimeters.•Alldevicesaremountedwithlowoutgassing conductiveepoxywithtoleranceof±25µm.


PARAMETERS FCI-GaAs-4M FCI-GaAs-12M

Active Area Diameter 70µm, Pitch:250µm

Responsivity Typ. 0.63A/W @850nm

Capacitance Typ. 0.65pF

Dark Current Typ. 0.03nA



Bandwidth Typ. 2.0GHz @ 850nm

Breakdown Voltage Typ. 50V



118

1.25Gbps / 2.50Gbps HybridsGaAs Photodetectors / Transimpedance Amplifiers

FCI-H125/250G-GaAs-100serieswithactiveareasizesof100µmisacompact

integrationofourhighspeedGaAsphotodetectorwithawidedynamic range

transimpedanceamplifier.CombiningthedetectorwiththeTIAinahermetically

sealed4pinTO-46orTO-52packageprovidesidealconditionsforhighspeed

signalamplification. Lowcapacitance, lowdarkcurrentandhigh responsivity

from650nmto860nmmakethesedevicesidealforhigh-bitratereceiversused

in LAN,MAN, and other high speed communication systems. TO packages

come standard with a lensed cap to enhance coupling efficiency, or with a

broadbanddoublesidedARcoatedflatwindow.TheFCI-H125/250G-GaAs-100

seriesisalsoofferedwithFC,SC,STandSMAreceptacles.

APPLICATIONS•HighSpeedOpticalCommunications•GigabitEthernet•FibreChannel•ATM•SONETOC-48/SDHSTM-16

FEATURES•GaAsphotodetector/LowNoise TransimpedanceAmplifier•HighBandwidth/WideDynamicRange•HermeticallySealedTO-46Can•Single+3.3Vto+5VPowerSupply•SpectralRange650nmto850nm•DifferentialOutput

UseACcouplinganddifferential100Ωloadforthebesthigh-speedperformance.DevicesarenotintendedtodriveDCcoupled,50Ω groundedload.





Supply Voltage Vcc 0 +6 V



PARAMETERS SYMBOL CONDITIONSFCI-H125G-GaAs-100 FCI-H250G-GaAs-100


Supply Voltage VCC --- +3 --- +5.5 +3 ---- +5.5 V

Supply Current ICC*TA = 0 to

70°C --- 26 *55 --- 35 *65 mA


Operating Wavelength λ --- 650 --- 860 650 --- 860 nm

Responsivity Rλ-17dBm,

Differential 1000 1700 --- 1000 1650 --- V/W

Transimpedance --- -17dBm, Differential --- 2800 --- --- 2800 --- Ω

Sensitivity S BER 10-10, PRBS27-1 -22 -26 --- -19 -22 --- dBm

Optical Overload --- --- 0 --- --- 0 --- --- dBm

Bandwidth BW -3dB, Small Signal --- 900 --- --- 1700 --- MHz

Low Frequency Cutoff --- -3dB --- 45 --- --- 30 --- kHz

Differential Output Voltage VOUT, P-P -3dBm 180 250 420 200 400 600 mV P-P

Output Impedance --- --- 47 50 53 47 50 53 Ω

Transimpedance Linear Range --- <5% 50 --- --- 65 --- --- µW P-P


Notes:•Allunitsininches(mm).•Alltolerances:0.005(0.125).•Pleasespecifywhenorderingtheflatwindoworlenscapdevices.•TheflatwindowdeviceshaveadoublesidedARcoatedwindowat850nm.

FCI-H125G-GaAs-100 FCI-H250G-GaAs-100

1.25Gbps / 2.50Gbps HybridsGaAs Photodetectors / Transimpedance Amplifiers



120

Fiber Optic ReceptaclesFC / SC / ST Receptacle Packages

FC Receptacle Package

SC Receptacle Package

ST Receptacle Package

Pleasenotethatallreceptacle-associatedphoto-detectorscarryanadditional0.45dBinsertionloss-thatis10%losstotheincidentsignalpower.

Terms and Conditions

CONTRACT QUOTATION; No original Customer Purchase Order will constitute a valid contract unless Company executes a confirming copy of the Purchase Order or issues an original Company Sales Order that Customer does not reject within 10 days after issuance or that Customer accepts by executing a confirming copy of the Sales Order. Company Sales Order Terms have priority over Customer Purchase Order Terms. A Company Quotation is an offer to sell the described Products and Services that will expire on the specified date.

TAXES; EXPORT COSTS. All sales, use VAT, excise and transfer taxes, and all customs and export fees and charges (except Export License Application fees) are not included in the Product Prices and will be added to the Invoice and paid by Customer.

PAYMENT TERMS; UCC SECURITY INTEREST. Standard payment terms after credit approval are net 30 days after the original Product shipment dates. Each Product shipment will constitute a separate and independent transaction. Customer grants UCC security interest to Company in all shipped Products until the Contract Price has been paid. Delinquent payments will accrue interest at one percent per month until paid.

PACKAGING; SHIPMENT; INSURANCE: RISK OF LOSS. Company shall provide at its expense commercial packaging adequate under normal conditions to identify and protect the Products during shipments by regular commercial carrier. Customer may request special packaging at its expense. Unless Customer requests specific carriers or methods of shipment, Company shall ship to Customer by regular commercial carrier and Customer shall pay all freight and unloading costs. Product shipment dates are approximate dates. Unless Customer requests specific insurance coverage or specific valuation amounts, Company shall specify shipment without insurance coverage and at minimum valuation amounts. Customer shall pay all insurance costs. Customer assumes all risk of loss and damage after delivery to the carrier and during shipment and shall file any damage claim forms required by the carrier or insurer.

FORCE MAJEURE; ALLOCATION. Performance by Company will be excused without liability during any period that performance is prevented or delayed by causes beyond the reasonable control of Company. During periods of such delays, Company shall allocate product shipments in a commercially reasonable manner.

LIMITED PRODUCT AND SERVICE WARRANTIES; WARRANTY DISCLAIMER. Company warrants only to Customer that the Products will comply with Product specifications and that the Products will operate properly under proper use and normal conditions without defects in parts or labor that prevent such operation for a period of 90 days after the individual Product shipment dates. Minor defects or deviations from Product Specifications that do not materially affect such operation will not constitute a breach of warranty or a failure to meet specifications. Company warrants only to Customer that the services will be promptly performed in a competent manner. THERE ARE NO

OTHER WARRANTIES THAT EXTEND BEYOND THE PRODUCT SPECIFICATIONS AND DESCRIPTION CONTAINED IN THE CONTRACT. COMPANY DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY THAT THE PRODUCTS ARE MERCHANTABLE OR THAT THE PRODUCTS ARE FIT FOR A PARTICULAR USE OR PURPOSE EVEN IF THE PARTICULAR USE OR PURPOSE IS DISCLOSED TO COMPANY IN ADVANCE.

LIMITED REMEDIES FOR BREACH OF WARRANTY. Defective Products may be returned to Company freight prepaid only after obtaining a Return Material Report Number from Company. If after testing and inspection any such returned product is determined to Company to be defective, Company shall promptly repair or replace the Product and return it to Customer freight prepaid. CUSTOMER HAS NO OTHER REMEDY FOR BREACH OF WARRANTY OR FAILURE TO MEET PRODUCT SPECIFICATIONS.

LIMITATION OF LIABILITY AND DAMAGES. COMPANY SHALL NOT BE LIABLE FOR INJURY TO ANY PROPERTY OTHER THAN THE PRODUCTS AND IN NO EVENT SHALL COMPANY BE LIABLE FOR ANY DIRECT OR INDIRECT CONSEQUENTIAL, INCIDENTAL OR SPECIAL DAMAGES.

INDEMNITY BY CUSTOMER. Customer shall defend and indemnify Company against any claims that are based upon any subsequent resale of the Products by Customer or upon any sale by Customer of any of its products that contain the Products.

PATENT AND TRADEMARK INFRINGEMENT DEFENSE AND INDEMNITIES. Company shall with the cooperation of Customer defend and indemnify Customer against any claims that the manufacture or sales of the Product by Company or that the ordinary use of the Products by Customer constitutes a violation of infringement of US Patents (except Process Patents) or trademarks. Customer shall defend and indemnify Company against any claims that use or combination of the Products by Customer with any material or products not sold by Company constitutes a violation or infringement of any US or foreign patents covering the use or combination of Products by Customer. Customer shall defend and indemnify Company against any claims that manufacture of sales of Products manufactured to Customer specifications constitutes a violation of infringement of any US or foreign patents or trademarks. SALE OF THE PRODUCTS BY COMPANY CONVEYS NO EXPRESS OR IMPLIED LICENSE UNDER ANY PATENT OWNED OR CONTROLLED BY COMPANY.

GOOD FAITH AND FAIR DEALING. Company and Customer each shall deal fairly in good faith with each other under the contract.

RESCHEDULING CHARGES. Products shipments may not be rescheduled without prior written consent from Company and payment of rescheduling charges determined by Company.

SPECIAL TERMS PRIORITY. Sales Order Special Terms have priority over Standard Terms.

APPLICABLE LAW, ARBITRATION. California law will exclusively apply to this Contract and its performance. All unresolved claims an disputes under this Contract shall be settled by arbitration in Los Angeles, California under American Arbitration Association Commercial Arbitration Rules (including mutual discovery) and judgment upon the Arbitration Award may be entered and enforce in any competent Court with jurisdiction.

DS-0006 A

An OSI Systems CompanyOptoelectronics

2015 Optoelectronic

Components Catalog

OSI O

ptoelectronics

Optoelectronic Com

ponents Catalog

© Copyright 2007 OSI Optoelectronics, Inc., Version 3 Rev. 052915

WORLD HEADQUARTERS

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OSI OptoelectronicsE-mail: [email protected]

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OSI OPTOELECTRONICS MANUFACTURING FACILITIES

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Complete Solutions

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