DOMINANT TM Opto Technologies Mini DomiLEDTM …€¦ · -40 … +100 80 mA mA V kV ˚C ˚C ˚C mW...
Transcript of DOMINANT TM Opto Technologies Mini DomiLEDTM …€¦ · -40 … +100 80 mA mA V kV ˚C ˚C ˚C mW...
29/05/2012 V1.01
Features:> High brightness surface mount LED.> Based on InGaN technology.> 120° viewing angle.> Small package outline (LxWxH) of 2.0 x 1.4 x 1.3mm.> Qualified according to JEDEC moisture sensitivity Level 2.> Compatible to IR reflow soldering.> Environmental friendly; RoHS compliance.
Mini DomiLEDTM
Synonymous with function and performance, the Mini DomiLEDTM series is perfectly suited for a variety of cross-industrial applications due to its small package outline, durability and superior brightness.
DATA SHEET:
Mini DomiLEDTM
InGaN : DNT-TJS
© 2005 DomiLED is a trademark of DOMINANT Opto Technologies.All rights reserved. Product specifications are subject to change without notice.
Applications:> Automotive: interior applications, eg: switches, telematics, climate control system, dashboard, etc.> Backlighting: button, LCD display
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29/05/2012 V1.02
DNT-TJS-QR2-1 True Green, 530nm 120 71.50
InGaN : DNT-TJS
Part OrderingNumber
Color ViewingAngle˚
Luminous Intensity @ 10mA IV (mcd)
NOTE1. All part number above comes in a quantity of 3000 units per reel.2. Other luminious intensity groups are also available upon request.3. Luminous intensity is measured with an accuracy of ± 11%.4. Wavelength binning is carried for all units as per the wavelength-binning table. Only one wavelength group is allowed for each reel.
Unit
Absolute Maximum RatingsMaximum Value
DC Forward Current
Peak Pulse Current; (tp ≤ 10µs, Duty cycle = 0.005)
Reverse Voltage
ESD Threshold (HBM)
LED Junction Temperature
Operating Temperature
Storage Temperature
Power Dissipation (at room temperature)
20
200 5
2
125
-40 … +100
-40 … +100
80
mA
mA
V
kV
˚C
˚C
˚C
mW
Optical characteristics at Tj=250C
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Min. Typ. Max.
112.50 180.0
Vr @ Ir = 10 µA
Electrical Characteristics at Tj=250CVf @ If = 10 mA
3.2 5.0
Forward Voltage, Vf is measured with an accuracy of ± 0.1 V.
Part NumberMin. (V) Typ. (V) Max. (V) Min. (V)
DNT-TJS 2.7 3.7
InGaN : DNT-TJS
29/05/2012 V1.03
Group
Dominant wavelength is measured with an accuracy of ± 1 nm.
Wavelength Grouping at Tj=250CWavelength distribution (nm)Color
DNT; True Green FullWXYZ
520 - 536520 - 524524 - 528528 - 532532 - 536
InGaN wavelength is very sensitive to drive current. Operating at lower current is not recommended and may yield unpredictable performance. Current pulsing should is used for dimming purposes.
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Q1Q2R1R2
71.5 ... 90.090.0 ... 112.5
112.5 ... 140.0140.0 ... 180.0
Brightness Group Luminous Intensity IV (mcd)
Luminous Intensity Group at Tj=25˚C
Luminous intensity is measured with an accuracy of ± 11%.
Relative Intensity Vs Forward Current
Forward Current, mA
Rel
ativ
e In
tens
ity
0 10 20 30 40 50
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
Forward Current Vs Forward Voltage
Forward Voltage, V
Forw
ard
Cur
rent
, mA
2 2.5 3 3.5 4 4.5
0
10
20
30
40
50
60
Maximum Current Vs Temperature
Ambient Temperature
True Green
Blue
0 10 20 30 40 50 60 70 80 90 100
0
5
10
15
20
25
Dominant Wavelength Shift Vs Forward Current
Forward Current, mA
0 5 10 15 20 25 30
-4
-2
0
2
4
6
8
10
12
Relative Inyensity Vs Wavelength
Wavelength, nm
400 450 500 550 600 650 700 750 800
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
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InGaN : DNT-TJS
0.270°
90°
80°
0
60°
50°
40°
30° 20°
0.6
0.4
1.0
0.8
10° 0°
Radiation Pattern
Rel
ativ
e In
tens
ity
Dom
inan
t Wav
elen
gth
Shift
, nm
Relative Intensity Vs Wavelength
Forw
ard
Cur
rent
, mA
Blue
True Green
Blue
True Green
True Green
Blue
536
538
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Relative Intensity Vs Forward Current
Forward Current; mA
Rel
ativ
e In
tens
ity; N
orm
aliz
ed a
t 10m
A
0 10 20 30 40 50
0
1
2
3
4
Forward Current Vs Forward Voltage
Forward Voltage; V
Forw
ard
Cur
rent
; mA
2 2.5 3 3.5 4
0
10
20
30
40
50
Maximum Current Vs Ambient Temperature
Ambient Temperature
Forw
ard
Cur
rent
; mA
0 10 20 30 40 50 60 70 80 90 100
0
5
10
15
20
25
Dominant Wavelength Shift Vs Forward Current
Forward Current, mA
0 5 10 15 20 25 30
-4
-2
0
2
4
6
8
10
12
Relative Intensity Vs Wavelength
Wavelength, nm
400 450 500 550 600 650 700 750 800
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Relative Intensity Vs Forward Current
Forward Current; mA
Rel
ativ
e In
tens
ity; N
orm
aliz
ed a
t 20m
A
0 10 20 30 40 50
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
Forward Current Vs Forward Voltage
Forward Voltage, V
Forw
ard
Cur
rent
, mA
2 2.5 3 3.5 4 4.5
0
10
20
30
40
50
60
Maximum Current Vs Temperature
Ambient Temperature
Forw
ard
Cur
rent
; mA
0 10 20 30 40 50 60 70 80 90 100
0
5
10
15
20
25
Dominant Wavelength Shift Vs Forward Current
Forward Current; mA
Dom
inan
t Wav
elen
gth
Shift
; nm
0 5 10 15 20 25 30
-4
-2
0
2
4
6
8
10
12
Relative Intensity Vs Wavelength
Wavelength; nm
Rel
ativ
e In
tens
ity
400 450 500 550 600 650 700 750
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Relative Intensity Vs Forward Current
Forward Current; mA
Rel
ativ
e In
tens
ity; N
orm
aliz
ed a
t 20m
A
0 10 20 30 40 50
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
Forward Current Vs Forward Voltage
Forward Voltage, V
Forw
ard
Cur
rent
, mA
2 2.5 3 3.5 4 4.5
0
10
20
30
40
50
60
Maximum Current Vs Temperature
Ambient Temperature
Forw
ard
Cur
rent
; mA
0 10 20 30 40 50 60 70 80 90 100
0
5
10
15
20
25
Dominant Wavelength Shift Vs Forward Current
Forward Current; mA
Dom
inan
t Wav
elen
gth
Shift
; nm
0 5 10 15 20 25 30
-4
-2
0
2
4
6
8
10
12
Relative Intensity Vs Wavelength
Wavelength; nm
Rel
ativ
e In
tens
ity
400 450 500 550 600 650 700 750
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
DOMINANT Opto Technologies
10/01/12 Mini DomiLED InGaN DNT-TJS - Catalogue-pv1 Page 5 of 8
PRELIMINARY UNDER DEVELOPMENT
Engineering reference data are not verified. The specifications are subject to change without notice.
Relative intensity vs. forward current. Forward current vs. forward voltage.
Radiation pattern. Maximum current vs. temperature. Relative Intensity vs. Wavelength Wavelength Shift vs. Forward Current
InGaN : DNT-TJS
29/05/2012 V1.05
Mini DomiLEDTM • InGaN : DNT-TJS Package Outlines
Material
Material
Lead-frame
Package
Encapsulant Soldering Leads
Cu Alloy With Ag Plating
High Temperature Resistant Plastic, PPA
Epoxy
Sn-Sn Plating
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29/05/2012 V1.06
InGaN : DNT-TJS
Recommended Solder Pad
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29/05/2012 V1.07
Taping and orientation
• Reels come in quantity of 3000 units.• Reel diameter is 180 mm.
InGaN : DNT-TJSDOMINANTOpto TechnologiesInnovating Illumination
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29/05/2012 V1.08
Packaging Specification
InGaN : DNT-TJSDOMINANTOpto TechnologiesInnovating Illumination
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29/05/2012 V1.09
Packaging Specification
Average 1pc Mini DomiLED 1 completed bag (3000pcs)
0.034 190 ± 10Weight (gram)
CardboardBox
Dimensions (mm) Empty BoxWeight (kg)
300 x 250 x 250
416 x 516 x 476
15 reels MAX
96 reels MAX
Small
Large
For Mini DomiLEDTM
Reel / Box Quantity / Box (pcs)Cardboard BoxSize
0.58
1.74
45,000 MAX
288,000 MAX
Weight (gram) 0.007 140 ± 10
InGaN : DNT-TJS
DOMINANT TM
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D/C: date codeS/N : serial no
GROUP : group
QTY : product quantity per reel
PART NO : partno
LOT NO : lotno
Moisture sensitivity level
Moisture absorbent material +Moisture indicator
The reel, moisture absorbent material and moisture indicator aresealed inside the moisture proof foil bag
Reel
Barcode label
DOMINANT ROHS Compliant
PB Free
Label
29/05/2012 V1.010
Time (sec)0 50 100 150 200
300
250
225
200
175
150
125
100
75
50
25
275
Tem
pera
ture
(˚C
)Classification Reflow Profile (JEDEC J-STD-020C)
Ramp-up3˚C/sec max.
255-260˚C10-30s
60-150s
Ramp-down
6˚C/secmax.
Preheat 60-180s
480s max
217˚C
Recommended Pb-free Soldering Profile
InGaN : DNT-TJSDOMINANTOpto TechnologiesInnovating Illumination
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Revision History
Page
-
Subjects
Initial Release
Date of Modification
29 May 2012
InGaN : DNT-TJS
29/05/2012 V1.011
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NOTE
All the information contained in this document is considered to be reliable at the time of publishing. However, DOMINANT
Opto Technologies does not assume any liability arising out of the application or use of any product described herein.
DOMINANT Opto Technologies reserves the right to make changes to any products in order to improve reliability, function
or design.
DOMINANT Opto Technologies products are not authorized for use as critical components in life support devices or systems
without the express written approval from the Managing Director of DOMINANT Opto Technologies.
InGaN : DNT-TJS
About Us
DOMINANTOpto TechnologiesInnovating Illumination
TM
DOMINANT Opto Technologies is a dynamic Malaysian Corporation that is among the world’s leading SMT LED Manufacturers. An excellence – driven organization, it offers a comprehensive product range for diverse industries and applications. Featuring an internationally certifi ed quality assurance acclaim, DOMINANT’s extra bright LEDs are perfectly suited for various lighting applications in the automotive, consumer and communications as well as industrial sectors. With extensive industry experience and relentless pursuit of innovation, DOMINANT’s state-of-art manufacturing, research and testing capabilities have become a trusted and reliable brand across the globe. More information about DOMINANT Opto Technologies can be found on the Internet at http://www.dominant-semi.com.
Please contact us for more information:
Head Quarter
DOMINANT Opto Technologies Sdn. Bhd.Lot 6, Batu Berendam, FTZ Phase III, 75350 Melaka, MalaysiaTel: (606) 283 3566 Fax: (606) 283 0566E-mail: [email protected]
DOMINANT Opto Technologies Sdn. Bhd. Shanghai Representative Office
Rm 305, Hongwell International Plaza No. 1600 Zhong Shan(W) Rd, Xuhui District, Shanghai, China 200235Tel: +86 21 5403 5655, +86 21 5403 5818 Fax: +86 21 5403 6055E-mail: [email protected]
DOMINANT Opto Technologies Sdn. Bhd. Shenzhen Representative Office
Rm 1808, Block B, South International Plaza No 3013, Yitian Road, Futian District, Shenzhen, 518048 P.R. ChinaTel: +86 755 8282 1781E-mail: [email protected]
DOMINANT Korea Sales Office
DOMINANT Semiconductors Korea Inc.RM 211 SUNTEAK CITY APT. 513-15 Sangdaewon-dong, Jungwon-gu, Seongnam-si, Gyeonggi-do, 462-725, KoreaTel: +82-31-701-5203 Fax: +82-31-701-5204E-mail: [email protected]
DOMINANT U.S.A Sales Office
25 Rockaway Road, 08833 Lebanon, New Jersey, USA Tel: (908) 439-9930 Cell: (908) 343-5810 Fax: (908) 439-9929E-mail: [email protected]
DOMINANT Europe Sales Office
DOMINANT Semiconductors Europe GmbHRaiffeisenstr. 38, 74906 Bad Rappenau Germany Tel: +49 (0) 7264-89010-10 / +49 (0) 7264-89010-11 Cell: +49 173-6907370 / +49 173-6907751 Fax: +49 (0) 7264-89010-29E-mail: [email protected]; [email protected]
DOMINANT India Sales Office
C-11,Vasanth Business Centre #86, TTK Road, Alwarpet Chennai - 600 018, INDIA Tel: 91-44-42030616 / 516 Cell: 91-9444920537 Fax: 91-9444920616E-mail: [email protected]
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