Document1The second gate on a dual gate GaAs FET is normally used for AGC/Gain control of the preamp...

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Transcript of Document1The second gate on a dual gate GaAs FET is normally used for AGC/Gain control of the preamp...

Page 1: Document1The second gate on a dual gate GaAs FET is normally used for AGC/Gain control of the preamp stage. With Japanese devices such as the 3SK97/121/124, NE411, NE251, and MGFI
Page 2: Document1The second gate on a dual gate GaAs FET is normally used for AGC/Gain control of the preamp stage. With Japanese devices such as the 3SK97/121/124, NE411, NE251, and MGFI
Page 3: Document1The second gate on a dual gate GaAs FET is normally used for AGC/Gain control of the preamp stage. With Japanese devices such as the 3SK97/121/124, NE411, NE251, and MGFI
Page 4: Document1The second gate on a dual gate GaAs FET is normally used for AGC/Gain control of the preamp stage. With Japanese devices such as the 3SK97/121/124, NE411, NE251, and MGFI
Page 5: Document1The second gate on a dual gate GaAs FET is normally used for AGC/Gain control of the preamp stage. With Japanese devices such as the 3SK97/121/124, NE411, NE251, and MGFI
Page 6: Document1The second gate on a dual gate GaAs FET is normally used for AGC/Gain control of the preamp stage. With Japanese devices such as the 3SK97/121/124, NE411, NE251, and MGFI
Page 7: Document1The second gate on a dual gate GaAs FET is normally used for AGC/Gain control of the preamp stage. With Japanese devices such as the 3SK97/121/124, NE411, NE251, and MGFI
Page 8: Document1The second gate on a dual gate GaAs FET is normally used for AGC/Gain control of the preamp stage. With Japanese devices such as the 3SK97/121/124, NE411, NE251, and MGFI
Page 9: Document1The second gate on a dual gate GaAs FET is normally used for AGC/Gain control of the preamp stage. With Japanese devices such as the 3SK97/121/124, NE411, NE251, and MGFI
Page 10: Document1The second gate on a dual gate GaAs FET is normally used for AGC/Gain control of the preamp stage. With Japanese devices such as the 3SK97/121/124, NE411, NE251, and MGFI
Page 11: Document1The second gate on a dual gate GaAs FET is normally used for AGC/Gain control of the preamp stage. With Japanese devices such as the 3SK97/121/124, NE411, NE251, and MGFI
Page 12: Document1The second gate on a dual gate GaAs FET is normally used for AGC/Gain control of the preamp stage. With Japanese devices such as the 3SK97/121/124, NE411, NE251, and MGFI
Page 13: Document1The second gate on a dual gate GaAs FET is normally used for AGC/Gain control of the preamp stage. With Japanese devices such as the 3SK97/121/124, NE411, NE251, and MGFI
Page 14: Document1The second gate on a dual gate GaAs FET is normally used for AGC/Gain control of the preamp stage. With Japanese devices such as the 3SK97/121/124, NE411, NE251, and MGFI
Page 15: Document1The second gate on a dual gate GaAs FET is normally used for AGC/Gain control of the preamp stage. With Japanese devices such as the 3SK97/121/124, NE411, NE251, and MGFI
Page 16: Document1The second gate on a dual gate GaAs FET is normally used for AGC/Gain control of the preamp stage. With Japanese devices such as the 3SK97/121/124, NE411, NE251, and MGFI
Page 17: Document1The second gate on a dual gate GaAs FET is normally used for AGC/Gain control of the preamp stage. With Japanese devices such as the 3SK97/121/124, NE411, NE251, and MGFI
Page 18: Document1The second gate on a dual gate GaAs FET is normally used for AGC/Gain control of the preamp stage. With Japanese devices such as the 3SK97/121/124, NE411, NE251, and MGFI
Page 19: Document1The second gate on a dual gate GaAs FET is normally used for AGC/Gain control of the preamp stage. With Japanese devices such as the 3SK97/121/124, NE411, NE251, and MGFI

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