Direct-Polish STI CMP Process For Next Generation Gap Fill … · 2019. 6. 6. · 3 Applied...

TFG – Planarization, Plating & Cleaning

Direct-Polish STI CMP Process For Next Generation Gap Fill TechnologiesA. Iyer, G. Leung, G. Menk, B. Zhang, G. Prabhu, N. Ingle, T. Winson, Z. Yuan, V. Banthia

Applied Materials Confidential/External Use

CMP Users Group MeetingJune, 21, 2006

2



Outline

Introduction– Key Requirements For Direct-Polish STI CMP

Direct-Polish STI CMP Process Development– HSS Only Process– Hybrid (Silica Slurry + HSS) Process

Hybrid STI CMP For High Aspect Ratio Process (HARP) Wafers– Blanket Wafer Results– Patterned Wafer Results

Summary

3



Key Requirements For Direct-Polish STI CMP

Excellent Planarity

Low Defects– Minimum requirement: no negative impact on yield

Cost Effective– Realize savings from elimination of reverse mask steps

Robust Implementation– Process needs to be viable from manufacturing standpoint

Advanced Gap Fill Technologies– Meet planarity requirements of next generation gap fill

technologies

Technology Node 90nm 65nm 45nmProduction Year 2004 2006 2009Oxide Dishing <200Å <150Å <100ÅNitride Erosion <150Å <100Å <50Å

STI at 90nm & Below Requires Advanced Direct Polish

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≤90nm STI Requires Advanced Direct Polish

DRAM 1/2 Pitch

Oxid

e D

ish

ing

Req

uir

em

en

t (Å

)

180nm 130nm 90nm 65nm

500

150

300

200

Reverse MaskStacked Pad / Silica Slurry

Reverse MaskStacked Pad / Silica Slurry

Direct PolishHSS Ceria Hybrid (2 Component)

Direct PolishHSS Ceria Hybrid (2 Component)

45nm

Advanced Direct PolishHSS Ceria Hybrid (Pre-Mixed)

FA Hybrid

Advanced Direct PolishHSS Ceria Hybrid (Pre-Mixed)

FA Hybrid

100

Trends In STI Dishing Requirements

5



Trends In STI Gapfill and CMP Over Burden (OB)

Future STI CMP Must Handle High OB & Low Topography

0

500

1000

1500

2000

2500

3000

3500

4000

130nm 110nm 90nm 65nmTechnology Node

STI

Overb

urd

en

(Å

)

He Based HDP

H2 Based HDP

HARP

HDP-CVD

HARP

~2kÅ

~1kÅ

~4kÅ

45nm

High Aspect Ratio Process (HARP)



Direct-Polish STI CMP: Hybrid CMP ProcessAMAT “Hybrid” Process

Platen 1Bulk Oxide Removal and Profile ControlLow Cost Silica Slurry

Platen 2Planarization with HSS

Platen 3Clear Oxide Over Nitride on All Features with HSS

SS-12HSS

STARTFINISH

7



Direct-Polish Hybrid CMP Process: HDP Wafers

PL1: Silica Slurry, PL2 & PL3: Pre-Mixed HSS

Excellent Uniformity & Planarity with Low Defects

Normalized Scratch Density

0

0.25

0.50

0.75

1.00

1.25

HSS Only Process Hybrid Process

No

rmali

zed

Scr

atc

h D

en

sity

0

1000

2,000

3,000

4,000

5,000

0 100 200 300 400 500

Number of Wafers

Th

ickn

ess

or

Ran

ge (

Å)

Ave. Oxide Thk. Trench WIWR

Trench WIDR Ave Nitride Thk.

8



Direct-Polish Hybrid STI CMP For HARP

Polisher: Applied Materials 300mm Reflexion™Heads : 5-Zone Contour™ headsPad conditioner: 3M A165 diamond disk Pad: IC1010 stacked padSlurry:– Platen 1: Semi-Sperse® 12 (SS12)– Platen 2 & 3: Ceria-based pre-mixed HSS

Wafers:– Blanket Wafers – Thermal (Tox), HARP– DRAM & Logic (STI-130) Patterned wafers– HARP wafers were annealed at two different

temperaturesHigh Temperature (1050°C) Low Temperature (900°C)

9



Blanket Removal Rate Experiments

Blanket HARP Wafers Exhibit Higher Removal Rate

1.00

1.131.24

1.00 1.02

1.24

0.00

0.25

0.50

0.75

1.00

1.25

1.50

Tox HARP 1050°C HARP 900°C

Film Type

No

rmali

zed

Rem

oval R

ate

SS-12 RateHSS Rate

10



Pattern Wafer Experiments

Patterned wafer removal rate driven primarily by topography

SS-12 Only PolishHDP

HARP

0

1,000

2,000

3,000

4,000

5,000

6,000

7,000

0 20 40 60 80

Polish Time (sec.)

Act

ive O

xid

e R

em

oved

(Å

) . HDP

HARP-900°CHARP-1050°C

11



Trench Diameter Scan – DRAM Test Wafers

0

1000

2000

3000

4000

5000

6000

0 15 30 45 60 75 90 105 120 135 150

Wafer Position (mm)

Tre

nch

Oxi

de T

hick

ness

(Å) .

Post 80X80µm Box Post 40X40µm Box

Post 120X150µm Box Post Scribeline

HARP - 900°CHDP

Both WID and WIW performance comparable between HDP and HARP

0

1000

2000

3000

4000

5000

6000

0 15 30 45 60 75 90 105 120 135 150

Wafer Position (mm)

Tre

nch

Oxi

de T

hick

ness

(Å)

.

Post 80X80µm Box Post 40X40µm Box

Post 120X150µm Box Post Scribeline

WIWR = 266Å, WIDR = 249Å WIWR = 288Å, WIDR = 209Å

12



Pattern Defect and Wet Etch Rate (WER) Data

Defect performance correlates well with film density & WER

WER: HDP < HARP-HT < HARP-LT

Typical Target ~200Å

0

100

200

300

400

500

0 5 10 15

HF Etch Time (mins)

Tre

nch

Oxid

e R

em

oved

(Å

)

HDP

HARP Film-900°C

HARP Film-1050°C

HF Etch Increases MS level

20

13

4 5

14

9

15

2118

42

34

23

0

10

20

30

40

50

HDP HARP 1050°C HARP 900°C

Film Type

Scr

atc

h C

ou

nt

Post CMPHF Etch - 5minsHF Etch - 10minsHF Etch - 15mins

Target ~200 Å

13



Scratch Decoration Due To HF Etch

Scratch intensity increases with prolonged HF exposure

Pre-HF HF – 5min HF – 10min

Pre-HF After 15mins of HF etch

Microscratch becomes scratch after prolonged HF exposure

14



HARP Logic (STI-130) Patterned Data

10% 70% 20% 60% Metrology Block

50% 40% 40% 40% 30%

40%500µm

Trench in 40% array

200µm Trench in 40% array

100µm Trench in 40% array

40%

40%100µm

Active in 40% array

200µm Active in

40% array40% 40%

40% 40% 40% 40% 40%

Planarity performance is comparable between HDP and HARP

STI-130 Mask Layout Planarity Performance

0

200

400

600

WIWR-no10% & 500µm

WIDR-no10% & 500µm

Dishing(Å)

WIW

R o

r W

IDR

or

Dis

hin

g (

Å) HDP

HARP

15



Summary

Direct-polish hybrid STI process has been developed for HARP

Planarity and defect performance is comparable to HDP

Applied Materials’ HDP BKM transfers to HARP with minor modifications

Impact on CoC or TPUT with Applied Materials’ hybrid HSS STI process is expected to be minimal

Development activity extends the capability of Applied’s ReflexionCMP platform to next generation gap fill technologies

Enabling Direct Polish STI For Next Generation Gap Fill

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