Dimitri A. Antoniadis

Dimitri A. Antoniadis Ph.D. ( Stanford, 1976) • Born in Athens Greece in 1947 - B.S. in Physics (National University of Greece, 1970) - Ph.D. in Electrical engineering (Stanford, 1976) • Professor of Electrical Engineering at MIT (1978-present) • Co-founder and first director of MTL • Director of Multi-University Focus Research Center for Materials, Structures and Devices. • Key Role in SUPREM I-II, proposed dopant diffusion mechanism, sub-micron lithography technique, first Single electron transistor, SOI • Received several awards - IEEE Paul Rappaport Award, Solid State S & T Young Author Award - Andrew S. Grove Award, University Researcher Award of SIA, George E. Smith Award

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Transcript of Dimitri A. Antoniadis

Dimitri A. Antoniadis

Ph.D. ( Stanford, 1976)

• Born in Athens Greece in 1947- B.S. in Physics (National University of Greece, 1970) - Ph.D. in Electrical engineering (Stanford, 1976)

• Professor of Electrical Engineering at MIT (1978-present)• Co-founder and first director of MTL• Director of Multi-University Focus Research Center for Materials,

Structures and Devices.• Key Role in SUPREM I-II, proposed dopant diffusion mechanism,

sub-micron lithography technique, first Single electron transistor, SOI • Received several awards

- IEEE Paul Rappaport Award, Solid State S & T Young Author Award- Andrew S. Grove Award, University Researcher Award of SIA, George E.

Smith Award

Robert W. DuttonPh.D. ( U. C. Berkeley, 1970)

• Grew up in Los Angeles- B.S. (1966) , M.S. (1967) and Ph.D. (1970) from U.C. Berkeley

• Professor of Engineering at Stanford University (1971-present)• Director of Research in the Center for Integrated Systems• Known as ‘ Father of TCAD’• Responsible for SUPREM and PISCES• Received several awards

- 1987 IEEE J. J. Ebers Award, 1988 Guggenheim Fellowship- Jack A. Morton Award, C & C Prize (Japan) in 2000- 2006 Phil Kaufman Award