Digitization in EMC simulation Dmytro Melnychuk, Soltan Institute for Nuclear Studies, Warsaw,...
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![Page 1: Digitization in EMC simulation Dmytro Melnychuk, Soltan Institute for Nuclear Studies, Warsaw, Poland.](https://reader036.fdocuments.in/reader036/viewer/2022082620/5a4d1b307f8b9ab05999adf2/html5/thumbnails/1.jpg)
Digitization in EMC simulation
Dmytro Melnychuk,Soltan Institute for Nuclear Studies,
Warsaw, Poland
![Page 2: Digitization in EMC simulation Dmytro Melnychuk, Soltan Institute for Nuclear Studies, Warsaw, Poland.](https://reader036.fdocuments.in/reader036/viewer/2022082620/5a4d1b307f8b9ab05999adf2/html5/thumbnails/2.jpg)
General scheme of digitizationPWO Preamplifier/
shaper FADC DigiAPD
● Conversion from deposited energy to photons● Signal conversion in APD● Signal transformation in pre-amplifier/shaper● FADC● Extraction of signal amplitude from FADC output (digital filter or simple parabolic fit)
![Page 3: Digitization in EMC simulation Dmytro Melnychuk, Soltan Institute for Nuclear Studies, Warsaw, Poland.](https://reader036.fdocuments.in/reader036/viewer/2022082620/5a4d1b307f8b9ab05999adf2/html5/thumbnails/3.jpg)
Design parameters which affect digitization
● Noise (preamplifier + APD)● Photon statistics (photoelectrons per MeV)● Shaping time (integration, differentiation)● Scintillation time constant● FADC frequency
Foreseen but not used at the moment:● Noise dependency on the channel (measured values which will be taken from Condition Data Base (CDB))● Non-uniformity of light production
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Values of parameters2 options for read-out electronics:- Quad-preamplifier (developed by Basel group), noise value = 1600 e- at -25 C (0.12 MeV), external shaping = 250 ns- ASIC read-out, noise 4400 e- at -25 C (0.34 MeV), built-in shaping = 100 ns (?)
Other parameters:● APD contribution to noise – excess noise factor F=1.38 at gain M=50, dark current (?)● 400 photoelectrons per MeV at -25 C, QE=70%● 80 MHz FADC● crystal scintillation time 6 ns
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Energy resolution dependence on digitization
1) Single gammas with different energies were generated with uniform angular distribution (10, 50, 100, 200, 500, 1000 MeV)
2) Dependence of energy deposited in 1 cluster on parameter of electronics(cluster – group of neighboring crystals) Energy threshold for single crystal = 1MeV
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Photon statistic dependenceE=10 MeV E=50 MeV
10 MeV 50 MeVsimple digitization 0.625 3.23noise (0.12 MeV) 0.637 3.30noise (0.12 MeV) +photon statistic
0.71 3.30
RMS (MeV)
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Noise dependence
Simpledigitization
0.12 MeV250 ns
(Quad-pream)
0.34 MeV100 ns(ASIC)
10 MeV 0.625 0.711 0.75950MeV 3.23 3.31 3.31100 MeV 4.38 4.54 4.54200 MeV 5.9 5.91 5.91500 MeV 8.7 8.71 8.771000 MeV 16.8 16.7 16.8
RMS (MeV)
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Shaping time dependence
0.34 MeV100 ns
0.34 MeV250 ns
10 MeV 0.759 0.72150MeV 3.31 3.30100 MeV 4.54 4.47200 MeV 5.91 5.93500 MeV 8.77 8.721000 MeV 16.8 16.7
RMS (MeV)
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Summary1) Energy resolution is sensitive to photon statistic only at lowest energies2) Noise contribution to energy resolution is on the level of 3% and decrease with growth of energy3) Energy resolution does not depend significantly on the shaping time but it a little bit worse for smaller values
To do:● Event mixing● Realistic digi format from DAQ